Abstract: High gain, multi-pattern multiple-input multiple-output (MIMO) antenna systems are disclosed. These systems provide for multiple-polarization and omnidirectional coverage using multiple radios, which may be tuned to the same frequency. The MIMO antenna systems may include multiple high-gain beams arranged (or capable of being arranged) to provide for omnidirectional coverage. These systems provide for increased data throughput and reduced interference without sacrificing the benefits related to size and manageability of an associated access point.

Abstract: An on-chip antenna switching scheme for Gigahertz frequencies where for the transmission path a first on-chip switching means is coupled between an on-chip power amplifier and an antenna. In the receiving path a second on-chip switching means at an input to an on-chip low noise amplifier (LNA) connects to ground. Coupled off-chip between the first switching means and antenna and antenna and the second switching means are impedance matching means and a half and a quarter wavelength line, respectively. In transmission mode both switching means are closed, in receiving mode both switching means are open. This allows for optimal transmission of the signal in either direction.

Abstract: A composite high-frequency component includes a diplexer arranged to separate/combine transmission/reception signals in frequency bands of a plurality of communication systems, transmit/receive switches, filters, and a balanced-unbalanced reception signal switch, and a matching circuit. The balanced-unbalanced reception signal switch includes a reception signal switch and balanced-unbalanced filters. A stripline in the transmit/receive switch and a stripline in the reception signal switch are provided on the same layers, and the matching circuit including capacitors is arranged between the transmit/receive switch and the reception signal switch.

Abstract: A translational switch system includes first and second translational switches, and a signal bus coupled therebetween. The first translational switch includes one or more inputs configured to receive a respective one or more first input signals, a first plurality of outputs, and a second plurality of outputs. The second translational switch includes one or more inputs configured to receive a respective one or more second input signals, a first output, and a second output. The signal bus, coupled between the first and second translational switches, includes (i) a first bus line coupled to a first one of the first plurality of outputs of the first translational switch, and to the first output of the second translational switch, and (ii) a second bus line coupled to a first one of the second plurality of outputs of the first translational switch, and to the second output of the second translational switch.

Abstract: A dual mode antenna switch module (ASM) comprises a UMTS TX port; a UMTS RX port; and a UMTS duplexer, comprising a common port, a TX port coupled to the UMTS TX port and an RX port coupled to the UMTS RX port. The ASM further comprises an antenna port; at least one GSM TX port; and at least one GSM RX port. A multi-port switch has respective ports coupled to the antenna port, the at least one GSM TX port, the at least one GSM RX port, and the common port of said UMTS duplexer. The common port of said duplexer has a reflection co-efficient at said connected multi-port switch port with a magnitude in the range 0.8 to 1.0 and with a phase, ?, where ?210°??n×360??150° where N is an integer.

Abstract: Provided are a front end module (FEM) of a mobile communication terminal and a method of fabricating the FEM. The FEM includes a multiband RF switching unit mounted on a substrate, and a wire having one end connected to a bonding pad of an input end of an antenna and the other end connected to a bonding pad of the multiband RF switching unit, the wire generating an inductance for inductive peaking in a signal pass band.

Abstract: A method of driving an array of switches comprising supplying the same drive signal to a first drive terminal of a plurality of the switches of an array and supplying second drive signals to a second drive terminal of each of the plurality of switches, the second drive signal supplied to a first of the switches being of a form selected to close the first switch, the form of the second drive signal supplied to the remaining switches being selected to prevent false activation of those switches.

Abstract: A high-frequency switch includes a transmission terminal, an antenna terminal, a reception terminal, and a voltage-control terminal; a first diode, the cathode thereof being electrically connected to the transmission terminal, and the anode being electrically connected to the antenna terminal; a first transmission line, electrically connected between the antenna terminal and the reception terminal; a second diode, the cathode thereof being electrically connected to the reception terminal, and the anode being electrically connected to the voltage-control terminal; a second transmission line, one end thereof being electrically connected to the transmission terminal, and the other end being connected to ground; and a capacitor, electrically connected between the voltage-control terminal and ground. The above high-frequency switch can be miniaturized and has superior performance.

Abstract: Switch sections composed of a plurality of FETs 111 to 118 and 121 to 128 connected in series are provided between input/output terminals 161 and 162 and ground terminals 181 and 182, and between the input/output terminals 161 to 163. A plurality of gate bias resistors 131 to 138, 141 to 148 are also provided. One terminal of each gate bias resistor is connected to a gate electrode of a corresponding one of the FETs 111 to 118 and 121 to 128, while a control voltage 171 and 172 for switching an ON state and an OFF state of the switch section is applied to the other terminal. Among the FETs included in each switch section, concerning the FETs 114, 115, 124, and 125 to which signal power is applied when the switch section is in the OFF state, the gate bias resistors 134, 135, 144, and 145 connected to the gate electrodes are set to have a highest resistance value.

Abstract: Systems and methods for hot standby of radio frequency (RF) power amplifier are disclosed, an auxiliary RF power amplifier is added and SPDT microwave switches are adopted at the input and output sides of primary RF power amplifiers to control whether to make the auxiliary RF power amplifier function. When a primary RF power amplifier fails, the auxiliary power amplifier can immediately take over the functions of the failed primary RF power amplifier without cutting off the power or stopping the operation of the whole system. SPDT microwave switches with multiple transmission lines and switch devices connected based on certain topologies are disclosed. The SPDT microwave switches have the functions of signal switching and power dividing and combining, simple circuit topology, excellent impedance matching characteristics or no reflected signals at ports, therefore the switches are highly practical and can be adopted in RF power amplifier hot standby systems.

Abstract: A multi-band transceiver has a function of sharing transmitted and received signals of multiple frequency bands by the same antenna. The multi-band transceiver mounts multiple filters that correspond to the multiple frequency bands and multiple amplifiers for amplifying the transmitted signals on the same substrate, and arranges the multiple filters in close vicinity to the amplifier in the order where the multiple filters are excellent in their temperature characteristic.

Abstract: A voltage supply unit is provided for a communication system provided with a network including a transmission path that consists of a main line and plural branch lines, which are formed as a differential two-wire type of transmission line consisting of first and second communion lines. This unit comprises a DC voltage source and an application device. The DC voltage source outputs a specified voltage different from a reference voltage of the transmission path. The application device applies, to the transmission path, the specified voltage in response to a command to be given. The unit is provided in a fault diagnosis apparatus or a node connected to the communication system. The specified voltage disables communication of only a certain node and to allow the remaining nodes to communicate with each other. In the certain node, an electrical disconnection is caused in either the first and second communications.

Abstract: A transmit-receive (T/R) switch for coupling a TDD transceiver to an antenna. The T/R switch comprises 1) a first circulator having a first port for receiving a transmit signal from the transceiver during transmit mode, a second port for sending the transmit signal to the antenna during transmit mode and receiving a received signal from the antenna during receive mode, and a third port for sending the received signal towards the transceiver during receive mode. The T/R switch further comprises 2) a second circulator having a first port for receiving the received signal from the third port of the first circulator during receive mode and a second port for sending the received signal towards the transceiver during receive mode, and 3) a termination load coupled to a third port of the second circulator. The circulators divert RF energy reflected from the antenna during transmit mode into the termination load.

Abstract: A transponder system that integrates redundancy and beam selection capabilities is disclosed. The transponder system comprises an amplifier network having a plurality of amplifiers; an antenna network, comprising a plurality of antennae; an output switching network, including a first output switching network switch, selectably coupling one of the amplifiers to one of the plurality of antennae at a first output switching network switch first switch state and to a second output switching network switch in a first output switch network switch second switch state, wherein the second output switching network switch is selectably coupled to a second one of the plurality of antennae in a second output switching network switch first switch state and to a third one of the plurality of antennae in a second output switching network switch second switch state.

Abstract: A high-frequency switch circuit has a plurality of high-frequency switches for passing and blocking a high-frequency signal between an input terminal and an output terminal depending on a control potential applied as a control signal, a high-frequency detecting terminal for detecting high-frequency signal passing through the high-frequency switch which is in ON-state, and a voltage boosting circuit for generating a potential for increasing the control potential applied to the high-frequency switch which is in ON-state in order to increase difference between the control potential applied to the high-frequency switch which is in an ON-state and the control potential applied to the high-frequency switch which is in an OFF-state, depending on an intensity or amplitude of the detected high-frequency signal.

Abstract: A method of manufacturing a micro-electromechanical device is provided. The method comprises providing a substrate incorporating drive circuitry, and forming a drive member, a motion-transmitting member and a working member on the substrate as discrete components. The drive member is formed to have an electrical circuit in electrical contact with the drive circuitry for receiving an electrical signal therefrom, a fixed end fast with the substrate and a free end arranged to be displaced relative to the substrate on receipt of the electrical signal by the electrical circuit. The motion-transmitting member is formed to be fast with the free end of the drive member so that the motion-transmitting member is displaced together with the free end. The working member is formed to be fast with the motion-transmitting member so that the working member is displaced with the motion-transmitting member to perform work.

Abstract: A diode logic circuit which can select a high voltage from among the voltages of a number of control voltage input terminals using a number of diodes made of Schottky junctions is integrally formed on a compound semiconductor substrate on which MESFET stages for switching and for securing isolations have been formed. In addition, the MESFET stages for switching are controlled by the voltages of the number of control voltage input terminals and the MESFET stages for securing isolations are controlled by the OR voltage that is outputted from the diode logic circuit.

Abstract: In a multi-pole, double-throw switch, three multi-terminal device connectors are coupled to a printed circuit board, along with two header connectors and a movable array. A pcb trace electrically couples each terminal of each device connector to one or more corresponding contacts at the header connectors. The movable is movable between a first throw position in which a first header connector is engaged, and a second throw position in which a second header connector is engaged. In the first throw position, each terminal of a first of the three device connectors is electrically connected to a corresponding terminal of a second of the three device connectors. In the second throw position, each terminal of the first of the three device connectors is electrically connected to a corresponding terminal of a third of the three device connectors.

Abstract: An apparatus and method to provide a micro-electromechanical systems (MEMS) radio frequency (RF) switch module with a vertical via. The MEMS RF switch module includes a MEMS die coupled to a cap section. The vertical via passes through the cap section to electrically couple an RF switch array of the MEMS die to a printed circuit board (PCB). In one embodiment, the MEMS die includes a trace ring surrounding at least a portion of the RF switch array so that a signal may enter or exit the MEMS RF switch module using the vertical via without crossing the trace ring.

Abstract: A RF switch can be used in a wide frequency range and can be manufactured at a low cost. The RF switch changes a signal passing through a waveguide with a variable device that is switchable between the first state in which the variable device has a high resistance and the second state in which the variable device has a low resistance, depending on the direction in which current flows through the variable device. The RF switch includes a high-frequency transmission circuit including the waveguide and at least one variable device, a driver circuit including at least one variable device, and a signal circuit for changing current supplied to the variable devices of the high-frequency transmission circuit and the driver circuit for switching between the first and second states of the variable devices.

Abstract: An interconnect apparatus for providing a communication path for data signals in a predetermined frequency band, that includes a first and a second sections of a transmission line, connected at one end to first and second data transceiving devices, respectively. A switch, such as a mechanical, electro-mechanical, electronic, electro-magnetic and electro-optical switch, having conductive/non-conductive states, is provided for connecting/disconnecting between the other ends of the first and the second sections, for providing a data communication path between the data transceiving devices while being in its conductive state a third and a fourth sections of a transmission line, each of which connected at one end to a contact of the switch and at the other end to a first and a second connector, respectively.

Abstract: The coupler of the present invention couples data signals, such as broadband RF signals, to and from a power line. The coupler of one embodiment that is for use with overhead power lines includes a length of URD MV cable with the neutral conductor removed. Each end of the URD cable is communicatively coupled to the MV power line conductor a predetermined distance from other. The distance between the two connections points on the MV may be related to the wavelength of a carrier frequency used to communicate the data signals. The URD cable may also form part of a transformer to permit the passage of data signals while preventing the flow of the high voltage power signals through the coupler. The neutral semi-conductive jacket of the URD cable may be coupled to ground via a low frequency conductive path.

Abstract: A high frequency switch device has SPDT(A), SPDT(B), and SPDT(C) switches, each having one pole and a first port and a second port, wherein the second port of the SPDT(A) is grounded via a terminating resistor and the second port of the SPDT(B) is grounded via a terminating resistor, respectively, and the first port of the SPDT(A) and the first port of the SPDT(B) are respectively connected to the first port and the second port of the SPDT(C).

Abstract: Two lines Ai1 (i=1 or 2) are connected to an input terminal In. The line Ai1 is grounded via a capacitor Ci1. The line Ai1 and a line Bi1 form a coupled line. One end of the line Bi1 is connected to a positive pole of a diode Di1 which is grounded at its negative pole. Lines Bi0 and Bi2 are connected to the other end of the line Bi1. The other end of the line Bi0 is connected to a capacitor Ci0 which is grounded at its other end and a resistor Ri0 which is connected to a voltage control terminal VCTLi at its other end. The other end of the line Bi2 is connected to the positive pole of a diode Di2. The line Bi2 and the line Ai2 form a coupled line. One end of the line Ai2 is connected to an output terminal Out-i, and the other end is grounded via a capacitor Ci2. The output of the terminals Out-1, 2 are switched to 5.8 GHz band, 4.8 GHz band and cut-off, by applying to VCTL1 and VCTL2 three potentials, that is, ground potential.

Abstract: A switch arrangement comprises a plurality of MEMS switches arranged on a substrate about a central point, each MEMS switch being disposed on a common imaginary circle centered on the central point. Additionally, and each MEMS switch is preferably spaced equidistantly along the circumference of the imaginary circle. Connections are provided for connecting a RF port of each one of the MEMS switches with the central point.

Abstract: A multiple switch MEMS structure has a higher resistance, higher durability switch arranged in parallel with a lower resistance, less durable switch. By closing the higher resistance, high durability switch before the lower resistance, less durable switch, the lower resistance, less durable switch is protected from voltage transients and arcing which may otherwise damage the lower resistance, less durable switch. By appropriate selection of dimensions and materials, the high resistance, high durability switch may be assured to close first, as well as open first, thereby also protecting the lower resistance, less durable switch from voltage transients upon opening as well as upon closing.

Abstract: A switch arrangement comprises a plurality of MEMS switches arranged on a substrate about, and close to, a central point, each MEMS switch being disposed on a common imaginary circle centered on the central point. Additionally, and each MEMS switch is preferably spaced equidistantly along the circumference of the imaginary circle and within one quarter wavelength of the central point for frequencies in the passband of the switch arrangement. Connections are provided for connecting a RF port of each one of the MEMS switches with the central point.

Abstract: An electromagnetic switch element that through electromechanical actuation is able to be used to influence the propagation of an electromagnetic signal within a guiding medium. An electromagnetic switch element that is activated by displacement of conducting elements, the displacement being forced through electrostatic, electric field, magnetic field, thermal or other means.

Abstract: An electronic signal processing apparatus has a signal switch with a first and a second transistor of normally-on type, having main current channels coupled between an internal node and a switch input and output, respectively. A diode provides a switchable signal coupling between the internal node and ground. A switch control circuit has a control output that is DC coupled to the main current channel of the first and the second transistor via the internal node to control conduction of the main current channels. The diode is also DC-coupled to the internal node so that a DC potential of a terminal of the diode that controls whether the diode is on or off is determined by a potential of the internal node. The diode is preferably incorporated in the DC current path from the control output to the internal node, so that the diode is forward-biased when a control voltage that makes the main current channels non-conductive is applied.

Abstract: An embodiment of the present invention provides an apparatus, comprising a radio frequency switch capable of using tunable dielectric capacitors as the switching element. The apparatus may further comprise a cross connector connecting a plurality of ports and wherein at least one of the tunable dielectric capacitors may placed between the cross connector at and least one port, thereby enabling impedance variations between the cross connector and the ports. Further, an embodiment of the present invention may provide at least one T connector between the cross connector and at least one of the plurality of ports, wherein at least one tunable dielectric capacitor may be associated with the T connector to vary the impedance in at least one node of the T connector.

Abstract: A dimensionally flexible sparse matrix comprising multiple ports connected to a plurality of interconnected universal switches is disclosed. Each universal switch has at least three terminals and is switchable to connect any pair or all three terminals together. The plurality of interconnected universal switches are independently switchable to connect any one or more ports of the sparse matrix to any subset of the others ports. The sparse matrix may also be cofigurable to duplicate the connectivity of a variety of dimensionally different switch matrices by designating a first subset of the multiple ports as row ports and a second subset of the remaining ports as column ports with the added flexibilty of connecting row-to-row and/or column-to column. The small physical size of signals stubs in the univerals switches results in a signal path between any pair of terminals that may be suitable for the transmission of signal frequencies greater than approximately 500 mega-hertz.

Abstract: A high-frequency switch circuit arrangement. A plurality of stages (for example, two stages) of capacitative elements connected in series (C11 and C12, C21 and C22) are used in a shunt path of a high-frequency component. If a surge voltage is applied, the voltage that each capacitative element should bear decreases in inverse proportion to the number of the connection stages. Consequently, the surge resistance of the capacitative element is improved. The capacitative elements connected in series can be manufactured using the usual manufacturing process of compound semiconductor devices and if the structure of the invention is adopted, a protective diode need not be provided. As the capacity is made common and the device structure is designed, the high-frequency switch circuit arrangement can be further made compact, etc.

Abstract: A bias circuit that includes a rectifier having an input, an output and a DC control voltage input, wherein the rectifier is configured to produce the rectifier output, while providing a substantially high input impedance at the rectifier input, a rectified voltage from an alternating input signal applied at the rectifier input; and a bias extractor having an extractor input, a control voltage input and an extractor output, coupled to the rectifier output, and being configured to produce at the extractor output a DC voltage that is greater in magnitude than the DC control voltage input.

Abstract: A universal power amplifier for amplifying and filtering transmit and receive signals has an input switch for switching transmit and receive signals. Transmit paths in the universal power amplifier are connected to the input switch. The transmit paths comprise filters for filtering the transmit signals and amplifiers for amplifying the transmit signals. Receive paths are connected to the input switch. The receive paths filter and amplify the receive signals. A first receive path shares one of the filters a first transmit path to filter a receive signal. A power output stage is connected to the transmit paths for amplifying the transmit signals into high-power transmit signals. A transmit/receive switch is connected to the power output stage and the receive paths for switching the high-power transmit signals and receive signals to an antenna.

Abstract: A circuit for guiding electromagnetic waves includes a substrate for supporting components of the circuit. The circuit includes a control device which includes a first conductive element on the substrate for connection to a first component of the circuit and a second conductive element on the substrate for connection to a second component. The control device is made up of a variable impedance switching material on the substrate which exhibits a bi-stable phase behavior. The compound has a variable impedance between a first impedance state value and a second impedance state value which can be varied by application of energy thereto to thereby affect the amplitude or phase delay of electromagnetic waves through the circuit.

Abstract: To provide a high frequency switch capable of dealing with multiple frequency bands without having plurality of switch circuits. A first diode that conducts due to a bias current when a first switch is closed is interposed between a first signal terminal and a second signal terminal. A strip line with the electrical length L1 is connected to the cathode of the first diode, the other end being grounded. At a position with the distance L2 from one end of the strip line, a capacitor and a second switch are connected to be equivalently grounded when a second switch is closed. The strip line resonates with the electrical length L1 when the second switch is opened, and resonates with the electrical length L2 when the second switch is closed.

Abstract: A switching circuit for use at the antenna of a multiband mobile cellular handset comprises an antenna port 10, a TX low band port 14, a TX high band port 12 and at least one RX port 16. A single pole, triple throw solid state voltage-controlled switch made up of four PIN diodes D1 to D4 selectively connects any one of the TX low band port, TX high band port and RX port to the antenna port. No diplexer is used to separate the low and high band parts o the circuit.

Abstract: An integrated RF front-end module for use in a communications device, such as a mobile phone. The RF front-end module is made from a laminated structure consisting of a plurality of layers. At least one of the layers is used to embed RF electronics. Microvias are disposed in various layers of the laminated structure so as to provide electrical connections to the embedded RF electronics. Two electrically conductive layers are provided on both sides of the laminated structure for shielding the RF components against electromagnetic interference. An antenna has one or two radiating elements disposed on one or both sides of the laminated structures for conveying RF signals to and from the RF electronics. The antenna can be fine-tuned and the operational frequency range of the antenna can also be changed.

Abstract: A switch network for switching network inputs to network outputs includes an initial terminal, an intermediate, and a final terminal layer of switches. The initial terminal layer of switches provides fan-out of the network inputs to widely separated locations in the intermediate layer. The intermediate layer of switches includes two sublayers: a first sublayer providing horizontally aligned fan-outs to the final terminal layer of switches and a second sublayer providing vertically aligned fan-outs to the final terminal layer of switches. The final terminal layer of switches includes a left sublayer and a right sublayer. The left sublayer provides fan-in from the vertically aligned fan-outs and the horizontally aligned fan-outs to the network outputs; the right sublayer provides fan-in from the vertically aligned fan-outs and the horizontally aligned fan-outs to the network outputs; and the fan-in provided by the left sublayer is orthogonal to the fan-in provided by the right sublayer.

Abstract: A high frequency device includes a transmission/reception amplifier 13 that amplifies and outputs an input signal, and a transmission/reception switch 2 that gang switches internally so that during transmission an input of the transmission/reception amplifier 13 is connected to an up mixer and an output of the transmission/reception amplifier 13 is connected to an antenna unit 5, and so that during reception the output of the transmission/reception amplifier 13 is connected to a down mixer and the input of the transmission/reception amplifier 13 is connected to the antenna unit 5.

Abstract: The coupler of the present invention includes a plurality of core members that are disposed between the semi-conductive ground jacket and neutral conductor of a standard URD MV cable. The core members are series wound by a transformer conductor, which forms a secondary winding that is coupled to the primary of a transformer, which provides impedance translation and/or isolation. The secondary of the transformer is coupled to a connector for communicating data signals through the coupler.

Abstract: The present invention relates to an electrical space switch matrix having m input ports and n output ports, the switch matrix comprising (m.n)/(i.j) switch blocks, each having i input ports and j output ports, where i is less than m and j is less than n; and a plurality of input elements and a plurality of output elements, the plurality of input elements and plurality of output elements being arranged so as to connect the switch blocks to the input and output ports of the switch matrix. In an embodiment of the invention, the input and output elements can be power splitters and power combiners respectively and are arranged so as to include crossover connection paths therebetween, with the result that crossover of connection paths is distributed between the power dividing/combining function and the switching function.

Abstract: The invention provides a composite high frequency component constituting a part of a microwave circuit having plural signal paths corresponding to their respective frequencies, comprising: a diplexer for coupling transmitting signals from the plural signal paths for transmission and distributing receiving signals into said plural signal paths for reception; plural high frequency switches for separating the plural signal paths into a transmission section and a reception section, respectively; plural filters introduced in the signal paths; said diplexer, said high frequency switch, and said filters being integrated into a ceramic multi-layer substrate formed by lamination of plural ceramic sheet layers. According to the above described composite high frequency component, the diplexer, the high frequency switches, and the filters which constitute the composite high frequency component are integrated into the ceramic multi-layer substrate formed by lamination of plural ceramic sheet layers.

Abstract: A method modifies dual gate transistor into a radio frequency switch. The method attaches a first signal input to a first gate of the transistor, attaches a second signal input to the source or drain of the transistor, attaches a common gate contact to the first gate and the second gate, attaches a signal output to a second gate of the transistor, attaches a source/drain contact connected to the source region or drain region where the second signal input is attached, and modulates the voltage supplied to the common gate and the source/drain contact to control the radio frequency switch.

Abstract: The invention relates to an arrangement and method for reducing losses at the transmitting end of a radio apparatus, especially one that operates in more than one system. An interfering transmitter is provided with two antenna filters one of which is a low-pass-type filter and the other a band-pass filter. The filter (BPF) with a higher stop-band attenuation is used only when the receiver (330, LNA) susceptible to interference is in receive state. At other times, the filter (LPF) with a lower stop-band attenuation and, hence, a lower pass-band attenuation, is used as the transmitting-end filter. Advantageously the selection between the different filters is realized using MEMS-type switches (SW31 to SW34). The invention minimizes the mean current consumption of the radio-frequency power amplifier (PA) of the said radio apparatus. The space required by and the production costs of the arrangement according to the invention are relatively small.

Abstract: A field effect transistor switch circuit may include: (1) first, second, and third switch terminals; (2) a first field effect transistor, a pair of the main electrodes of which are connected respectively to the first switch terminal and the second switch terminal; and (3) a second field effect transistor, a pair of the main electrodes of which are connected respectively to the first switch terminal and the third switch terminal. A first resistor is connected between a control electrode and any one of the pair of the main electrodes of the first field effect transistor, and a second resistor is connected between a control electrode and any one of the pair of the main electrodes of the second field effect transistor.

Abstract: The purpose of the present invention is to provide a small-sized switch attaining high isolation of not less than 80 dB, maintaining low insertion loss also in high frequencies not less than 60 GHz. A semiconductor switch according to the present invention utilizes FETs a gate electrode, a source electrode, and a drain electrode of each of which are formed on a semiconductor. The source electrode and the drain electrode are connected with the earth as well as are disposed in parallel to each other, and the gate electrode is formed between the source electrode and the drain electrode, and both the ends of the gate electrode are connected to the first input-output terminal 1 and the second input-output terminal.

Abstract: A transmitting/receiving switch, in which a transmission terminal connected to a transmission circuit is connected to an antenna terminal through a first switching element, a filter for attenuating harmonic contents in a transmission signal, a phase-shift circuit for significantly increasing an impedance from a node toward said transmission terminal in a reception frequency band by phase-adjusting the amount of phase shift by performing phase adjustment according to the amount of the phase shift generated by said filter. Furthermore, the antenna terminal connected to an antenna ANT is connected to a reception terminal through the node and a second switching element, and the reception terminal is connected to a reception circuit Rx.

Abstract: A switchable combiner and apparatus for providing intergrated combiner unit, which can reduce problem due to frequent substitution of unit. The apparatus for providing intergrated combiner unit includes the means of; a) dividing input signal according to basic type, redundancy type or power division/coupling type; b) switching the transmitted signal to power amplifier; c) switching the transmitted signal to the means of combining; and d) combining the transmitted signal according to basic type, redundancy type or power division/coupling type.

Abstract: First and second transmission paths P1 and P2 are disposed between a first port #1 connected to an antenna ANT and a second port #2 connected to a transceiving circuit 10. The first transmission path P1 includes receiving filters Rx1, Rx2, and Rx2?, an amplification circuit LNA, and 90° hybrid circuits 12 and 14. The second transmission path P2 includes a transmitting filter Tx1. A received signal amplified by the amplification circuit LNA is transmitted to the port #2 via the 90° hybrid circuits 12 and 14, but is not transmitted to the second transmission path P2. A transmission signal is transmitted from the port #2 to the second transmission path P2. This prevents oscillation of the received signal due to positive feedback.