Abstract: Methods and systems for controlling MEMS switches in an integrated circuit package are disclosed and may include controlling one or more arrays of MEMS switches utilizing a control chip. The arrays of MEMS switches and one or more circuit components may be integrated in and/or on a multi-layer package. The control chip may be bonded to the multi-layer package. The circuit components may be coupled to the arrays of MEMS switches via electrical traces embedded in and/or deposited on the multi-layer package. The control chip may be flip-chip bonded to the multi-layer package. The MEMS switches may be actuated electrostatically or magnetically. The circuit components may include integrated circuits, inductors, capacitors, surface mount devices, and/or transformers.

Abstract: A relay driving a plunger includes a movable iron piece, and a movable contact point, and position restricting means. The movable iron piece is configured to rotate around a horizontal shaft center between a contact point base and an electromagnetic unit based on excitation and nonexcitation of an electromagnetic unit placed above the contact point base. The movable contact point is fixed to a lower end portion of the plunger protruding from a lower surface of the contact point base. The movable contact point is contacted with and separated from a fixed contact point. The position restricting means is provided on an upper surface side of the contact point base.

Abstract: A method for fabricating integrated MEMS switches and filters includes forming cavities in a silicon substrate, metalizing a first pattern on a quartz substrate to form first switch and filter elements, bonding the quartz substrate to the silicon substrate so that the first switch and filter elements are located within one of the cavities, thinning the quartz substrate, forming conductive vias in the quartz substrate, metalizing a second pattern on a second surface of the quartz substrate to form second switch and filter elements, etching the quartz substrate to separate MEMS switches from filters, forming protrusions on a host substrate, metalizing a third metal pattern on the host substrate to form metal anchors and third switch elements, compression bonding the metal anchors on the host substrate to second switch and filter elements, forming signal lines to integrate the MEMS switches and filters and removing the silicon substrate.

Abstract: A relay driving a plunger includes a movable iron piece, and a movable contact point, and position restricting means. The movable iron piece is configured to rotate around a horizontal shaft center between a contact point base and an electromagnetic unit based on excitation and nonexcitation of an electromagnetic unit placed above the contact point base. The movable contact point is fixed to a lower end portion of the plunger protruding from a lower surface of the contact point base. The movable contact point is contacted with and separated from a fixed contact point. The position restricting means is provided on an upper surface side of the contact point base.

Abstract: A fabrication method of an RF MEMS switch includes forming a signal transmission line having a first signal transmission line and a second signal transmission line electrically separated from each other for transmitting a signal and forming an on/off component for turning on/off the signal transmission line. The forming the on/off component further includes forming a suspension layer, forming a piezoelectric capacitor disposed at the suspension layers, and actuated with a piezoelectric characteristic by receiving an external power, forming a contact electrode disposed at the suspension layers, and electrically separated from the piezoelectric capacitors, and forming a ground line adjacent to the signal transmission line, wherein the ground line is electrically connected to the signal transmission line by a connection line.

Abstract: A micro-switching device includes a fixing portion, a movable portion, a first electrode with first and second contacts, a second electrode with a third contact contacting the first contact, and a third electrode with a fourth contact opposing the second contact. In manufacturing the micro-switching device., the first electrode is formed on a substrate, and a sacrifice layer is formed on the substrate to cover the first electrode. Then, a first recess and a shallower second recess are formed in the sacrifice layer at a position corresponding to the first electrode. The second electrode is formed to have a portion opposing the first electrode via the sacrifice layer, and to fill the first recess. The third electrode is formed to have a portion opposing the first electrode via the sacrifice layer; and to fill the second recess. Thereafter the sacrifice layer is removed.

Abstract: The present invention provides a monolithic inductor developed using radio frequency micro electromechanical (RF MEMS) techniques. In a particular embodiment of the present invention, a tunable radio frequency microelectromechanical inductor includes a coplanar waveguide and a direct current actuatable contact switch positioned to vary the effective width of a narrow inductive section of the center conductor of the CPW line upon actuation the DC contact switch. In a specific embodiment of the present invention, the direct current actuatable contact switch is a diamond air-bridge integrated on an alumina substrate to realize an RF switch in the CPW and microstrip topology.

Abstract: An RF MEMS switch and a method for fabricating the same are disclosed, in which the RF MEMS device is down driven at a low voltage using a piezoelectric effect. The RF MEMS switch includes a substrate provided with RF signal lines and a cavity, a cantilever positioned on the cavity, having one end fixed to the substrate, and a contact pad connecting the RF signal lines with the cantilever in contact with the RF signal lines when the cantilever is down driven.

Abstract: The present invention describes nano-scale fabrication technique used to create a sub-micron wide gap across the center conductor of a coplanar waveguide transmission line configured in a fixed-fixed beam arrangement, resulting in a pair of opposing cantilever beams that comprise an electro-mechanical switch. Accordingly, a nanometer-scale mechanical switch with very high switching speed and low actuation voltage has been developed. This switch is intended primarily for application in the RF/microwave/wireless industry.

Abstract: A MEMS switch is provided including a substrate, a movable actuator coupled to the substrate and having a first side and a second side, a first fixed electrode coupled to the substrate and positioned on the first side of the movable actuator to generate a first actuation force to pull the movable actuator toward a conduction state, and a second fixed electrode coupled to the substrate and positioned on the second side of the movable actuator to generate a second actuation force to pull the movable actuator toward a non-conducting state.

Abstract: A switch circuit includes: a first input and output terminal; a first inductor connected with the first input and output terminal; a capacitor connected with the first inductor; a second input and output terminal connected with the capacitor; a first MEMS switch connected with one end of the capacitor; a second MEMS switch connected with the other end of the capacitor; and a second inductor connected between the first MEMS switch and the second MEMS switch, and satisfies a relationship of f=1/(2??CL1)=1/(2??CL2), where L1 is an inductance of the first inductor, L2 is an inductance of the second inductor, C is a capacitance of the capacitor, and f is a use frequency.

Abstract: Disclosed are methods for fabricating a micro-electro-mechanical switch. The switch has a cantilever arm disposed on a substrate that can be moved in orthogonal directions for latching and unlatching. For latching, the cantilever arm is moved back by a comb-drive actuator and then pulled down by electrodes disposed on the substrate and the cantilever arm. The comb-drive actuator switch is then released and the cantilever arm moves forward to be captured by a dove-tail structure on the substrate. When the voltage is removed, the cantilever arm is held in place by the dove-tail structure. The switch is unlatched by actuating the comb-drive actuator to move the cantilever arm away from the dove-tail structure. The cantilever arm will then pop up once it is released from the dove-tail structure.

Abstract: Disclosed is a DPDT RF switch. The DPDT RF switch includes: first to fourth transmission lines for forming first to fourth ports, respectively; and first to fourth slot line pattern sections. The first slot line pattern section includes: a first slot line; and a first switching device for blocking signal transfer by short-circuiting a gap of a slot line. The third slot line pattern section includes: a third slot line; and a third switching device for blocking signal transfer by short-circuiting a gap of a slot line. The second slot line pattern section includes: a first loop-shaped slot line; a second slot line; and a second switching device for blocking signal transfer by short-circuiting a gap of a slot line. The fourth slot line pattern section includes: a second loop-shaped slot line; a fourth slot line; and a fourth switching device for blocking signal transfer by short-circuiting a gap of a slot line.

Abstract: Methods and systems for communicating via flip-chip die and package waveguides are disclosed and may include communicating one or more signals between sections of an integrated circuit via one or more waveguides integrated in a multi-layer package. The integrated circuit may be bonded to the multi-layer package. The waveguides may be configured via switches in the integrated circuit or by MEMS switches integrated in the multi-layer package. The signals may include a microwave signal and a low frequency control signal that may configure the microwave signal. The low frequency control signal may include a digital signal. The waveguides may comprise metal and/or semiconductor layers deposited on and/or embedded within the multi-layer package.

Abstract: Spinwave transmission systems that include switching devices to direct the transmission of the spinwaves used for data transfer and processing. In one particular embodiment, a system for spinwave transmission has a first magnetic stripe configured for transmission of a spinwave and a second magnetic stripe for transmission of the spinwave, with a gap therebetween. The system includes a coupler that has a first orientation and a second orientation, where in the first orientation, no magnetic connection is made between the magnetic stripes, and in the second orientation, a connection is made between the magnetic stripes. The connection allows transmission of the spinwave from the first magnetic stripe to the second magnetic stripe. The first and second orientation may be the physical position of the coupler, moved by thermal, piezoelectric, or electrostatic forces, or, the first and second orientation may be a magnetic state of the coupler.

Abstract: An acoustic resonator includes a substrate, a support section provided on the substrate, a lower electrode provided on the support section, a piezoelectric body provided on the lower electrode, and an upper electrode provided on the piezoelectric body. The lower electrode, the piezoelectric body and the upper electrode form a vibration section. The support section for supporting the vibration section is shaped such that at least one portion of a vertical cross-section thereof has a curvature.

Abstract: A switching apparatus has a conductive housing forming a chamber. The housing has an aperture enabling communication between the chamber and a housing exterior. A rod extends through the aperture, and has a first end within the chamber, and an opposed second end outside the chamber. The rod reciprocates over a range of motion between a first position in which a limited portion of the rod extends into the chamber, and a second position in which a greater portion of the rod extends into the chamber. The rod has a electrically insulative portion electrically isolating the first end from the second end, and has a conductive surface contacting the housing. A pair of electrical contacts are located in the chamber, and a shorting bar connected to the first end of the rod operates to bridge the contacts when the rod is in a selected position.

Abstract: An electromechanical switch with a rigidified electrode includes an actuation electrode, a suspended electrode, a contact, and a signal line. The actuation electrode is disposed on a substrate. The suspended electrode is suspended proximate to the actuation electrode and includes a rigidification structure. The contact is mounted to the suspended electrode. The signal line is positioned proximate to the suspended electrode to form a closed circuit with the contact when an actuation voltage is applied between the actuation electrode and the suspended electrode.

Abstract: An electromechanical switch includes an actuation electrode, a cantilever electrode, a contact, a suspended conductor, and a signal line. The actuation electrode is mounted to a substrate, the cantilever electrode is suspended proximate to the actuation electrode, and the contact is mounted to the cantilever electrode. The suspended conductor is coupled to the contact and straddles a portion of the cantilever electrode. The signal line is positioned to form a closed circuit with the contact and the suspended conductor when an actuation voltage is applied between the actuation electrode and the cantilever electrode.

Abstract: An adjustable impedance matching network comprising passive elements (2, 4, 10, 12) and at least a pair of micro-electromechanical switch-assemblies (6, 8, 14, 16), said switch-assemblies (6, 8, 14, 16) being connected to the passive elements (2, 4, 10, 12) to form parallel circuits and/or serial circuits of said passive elements (2, 4, 10, 12) and said switch-assemblies (6, 8, 14, 16), said circuits having a range of impedance values.

Abstract: A RF MEMS switch comprising a crossbeam of SiC, supported by at least one leg above a substrate and above a plurality of transmission lines forming a CPW. Bias is provided by at least one layer of metal disposed on a top surface of the SiC crossbeam, such as a layer of chromium followed by a layer of gold, and extending beyond the switch to a biasing pad on the substrate. The switch utilizes stress and conductivity-controlled non-metallic thin cantilevers or bridges, thereby improving the RF characteristics and operational reliability of the switch. The switch can be fabricated with conventional silicon integrated circuit (IC) processing techniques. The design of the switch is very versatile and can be implemented in many transmission line mediums.

Abstract: Various embodiments are provided herein for a configurable high frequency coaxial switch. The switch includes a switch housing module that has at least two ports and is adapted for operation in a wide frequency band. The switch also includes at least one frequency-matching port component module that is configured to connect a transmission line to one of the ports of the switch housing module. The at least one frequency-matching port component module is also configured to provide a match to a desired frequency range. In use, the switch housing module together with the at least one frequency-matching port component module allow for operation of the configurable high frequency coaxial switch at the desired frequency range.

Abstract: A micro-electromechanical device includes an actuation electrode and a suspended electrode. The actuation electrode is disposed on a substrate. The suspended electrode is suspended proximate to the actuation electrode. The suspended electrode includes support members and a plate member. Each of the support members is clamped at either end to the substrate via anchors and the plate member is supported by the support members. The support members are flexible in response to an actuation voltage that is applied between the actuation electrode and the suspended electrode to allow the suspended electrode to electrostatically pull towards the actuation electrode. A signal line is coupled to the suspended electrode.

Abstract: Methods and systems for controlling MEMS switches in an integrated circuit package are disclosed and may include controlling one or more arrays of MEMS switches utilizing a control chip. The arrays of MEMS switches and one or more circuit components may be integrated in and/or on a multi-layer package. The control chip may be bonded to the multi-layer package. The circuit components may be coupled to the arrays of MEMS switches via electrical traces embedded in and/or deposited on the multi-layer package. The control chip may be flip-chip bonded to the multi-layer package. The MEMS switches may be actuated electrostatically or magnetically. The circuit components may include integrated circuits, inductors, capacitors, surface mount devices, and/or transformers.

Abstract: The systems and methods described herein provide for a radio frequency micro-electromechanical systems switch having two or more resonant frequencies. The switch can be configured as a capacitive shunt switch having a deflectable member coupled between two electrodes over a transmission line. A first insulator can be located between one of the electrodes and the deflectable member to form a capacitive element. The deflectable member can be deflectable between an up-state and a down-state, the down-state capacitively coupling the deflectable member with the transmission line. The degree by which the deflectable member overlaps the first insulator can be adjusted to adjust the capacitance of the capacitive element and the resulting resonant frequency.

Abstract: A component is provided for an impedance change in a coplanar waveguide which includes two grounding conductors and a signal line lying between the grounding conductors, as well as a conducting connecting element, which has a covering surface for the two grounding conductors and the signal line, and is electrically insulated, so that in each case a capacitor is formed. The connecting element and the lines are situated and arranged so that the respective capacitor between the grounding conductors and the connecting element has an invariable capacitance, but the capacitor between the connecting element and the signal line has a variable capacitance. A structure is also provided in which in an exactly opposite way, the respective capacitor between the grounding conductors and the connecting element has a variable capacitance, but the capacitor between the connecting element and the signal line has an invariable capacitance. Furthermore, a method for producing such a component is also provided.

Abstract: A microelectromechanical system (MEMS) switch comprising a radio frequency (RF) transmission line; a structurally discontinuous RF conductor adjacent to the RF transmission line; a pair of cantilevered piezoelectric actuators flanking the RF conductor; a contact pad connected to the pair of cantilevered piezoelectric actuators; a pair of cantilevered structures connected to the RF conductor; a plurality of air bridges connected to the pair of cantilevered piezoelectric actuators; and a plurality of contact dimples on the contact pad. Preferably, the RF transmission line comprises a pair of co-planar waveguide ground planes flanking the RF conductor; and a plurality of ground straps connected to the pair of co-planar waveguide ground planes, wherein the RF transmission line is operable to provide a path along which RF signals propagate.

Abstract: A vibration type MEMS switch and a method of fabricating the vibration type MEMS switch. The vibration type MEMS switch includes a vibrating body supplied with an alternating current voltage of a predetermined frequency to vibrate in a predetermined direction; and a stationary contact point spaced apart from the vibrating body along a vibration direction of the vibrating body. When a direct current voltage with a predetermined magnitude is applied to the stationary contact point, a vibration margin of the vibrating body is increased, the vibrating body contacts the stationary contact point and the vibration type MEMS switch is turned on. A first substrate is bonded to a second substrate to isolate the vibrating body in a sealed vacuum space. The vibration type MEMS switch is turned on and/off by a resonance.

Abstract: A MEMS switch and method of fabrication comprises a RF transmission line; a RF beam structure comprising a RF conductor; a cantilevered piezoelectric actuator coupled to the RF beam structure; a plurality of air bridges connected to the cantilevered piezoelectric actuator; and a plurality of contact dimples on the pair on the RF beam structure. The RF transmission line comprises a pair of co-planar waveguide ground planes flanking the RF conductor; and a plurality of ground straps, wherein the RF transmission line is operable to provide a path along which RF signals propagate. The cantilevered piezoelectric actuator comprises a dielectric layer connected to the RF beam structure; a bottom electrode connected to the dielectric layer; a top electrode; and a piezoelectric layer in between the top and bottom electrodes, wherein the top electrode is offset from an edge of the piezoelectric layer and the bottom electrode.

Abstract: In a multi-pole, double-throw switch, three multi-terminal device connectors are coupled to a printed circuit board, along with two header connectors and a movable array. A pcb trace electrically couples each terminal of each device connector to one or more corresponding contacts at the header connectors. The movable is movable between a first throw position in which a first header connector is engaged, and a second throw position in which a second header connector is engaged. In the first throw position, each terminal of a first of the three device connectors is electrically connected to a corresponding terminal of a second of the three device connectors. In the second throw position, each terminal of the first of the three device connectors is electrically connected to a corresponding terminal of a third of the three device connectors.

Abstract: A vertical comb actuator radio frequency (RF) micro-electro-mechanical system (MEMS) switch. The RF MEMS switch includes a substrate; first and second signal lines spaced at a predetermined interval from each other and deposited on an upper surface of the substrate; an actuator positioned over the first and second signal lines when viewed from the upper surface of the substrate and spaced at a predetermined interval from the first and second signal lines; and a fixing portion positioned over the actuator when viewed from the upper surface of the substrate, wherein the fixing portion permits the actuator to come in contact with the first and second signal lines when a predetermined driving voltage is applied. Thus, it is possible to prevent the actuator from sticking to the substrate. In addition, the RF MEMS switch can be operated with a low voltage and insertion loss and power loss can be reduced.

Abstract: An RF switch (104) that is activated by the insertion of a connector. The RF switch (104) can comprise one or more antenna adapters that can be formed by a number of predetermined RF connector types. The RF switch can include a switch housing (204). A first, second, and third coaxial RF connectors (201, 202, 203) can be mounted to the switch housing (204). The first, second, and third coaxial RF connectors (201, 202, 203) can individually have both an inner and outer conductor (205-206; 207-208; 209-210, respectively). An actuator (501) can be movable from a first position to a second position responsive to a mechanical force applied to the third coaxial connector (203). A switch element (512) can be responsive to the actuator (501). When in the first position, the switch element (512) can exclusively form a conductive path between the first and second coaxial RF connectors (201, 202).

Abstract: Various embodiments are provided herein for a configurable high frequency coaxial switch. The switch includes a switch housing module that has at least two ports and is adapted for operation in a wide frequency band. The switch also includes at least one frequency-matching port component module that is configured to connect a transmission line to one of the ports of the switch housing module. The at least one frequency-matching port component module is also configured to provide a match to a desired frequency range. In use, the switch housing module together with the at least one frequency-matching port component module allow for operation of the configurable high frequency coaxial switch at the desired frequency range.

Abstract: A tri-state RF MEMS switch includes: a first well formed in a first substrate; a first input signal line and a first output signal line forming a first gap therebetween in the first well; a post bar forming a boundary between the second well and third well in the second substrate; a second input signal line and a second output signal line, and a third input signal line and a third output signal line forming a second gap and a third gap in the second well and the third well, respectively; and a membrane disposed between the first substrate and the second substrate such that the membrane crosses the first, second and third gaps, the membrane including a first conductive pad, a second conductive pad, and a third conductive pad thereon to face the first, second and third gaps, respectively.

Abstract: An RF assembly of a multiport switch is disclosed. The RF assembly includes an RF cavity housing and a cover. The RF cavity housing includes a common port defined by a cavity in a surface of the RF cavity housing and at least another port defined by a trough in the surface of the RF cavity housing. The trough is connected to the cavity. When covered by the cover, the trough defines a channel connected at one end to the cavity. The distance between opposing surfaces of the RF cavity housing and the cover at a proximal end of the channel is smaller than the corresponding distance of a portion of the channel immediately adjacent the proximal end. A multiport switch having the RF assembly is also disclosed.

Abstract: The present invention describes nano-scale fabrication technique used to create a sub-micron wide gap across the center conductor of a coplanar waveguide transmission line configured in a fixed-fixed beam arrangement, resulting in a pair of opposing cantilever beams that comprise an electro-mechanical switch. Accordingly, a nanometer-scale mechanical switch with very high switching speed and low actuation voltage has been developed. This switch is intended primarily for application in the RF/microwave/wireless industry.

Abstract: A first and second capacitor plate are provided (101 and 102). Each capacitor plate has an opening disposed therethrough with the second capacitor plate being disposed substantially opposite the first capacitor plate. A first electrically conductive path interface is then disposed (103) in one of these openings as is at least a second electrically conductive path interface (104).

Abstract: A redundant transition device between a waveguide (1) and at least two redundant processing circuits (2, 3) includes two uncoupled coplanar lines (5, 6) formed one on either side of a single substrate plate (4) and extending, in part at least, into the waveguide (1). Each coplanar line (5) has a longitudinal end (17) for connection to one (2) of the processing circuits, and a longitudinal transfer end (16), adapted to channel an electromagnetic wave between the waveguide and the slots (21, 22) of the coplanar line. Each coplanar line (5, 6) is provided with a phase shifting element (25, 26), for inverting the phase of an electric field on one side of the central transmission strip (7, 10) of the coplanar line.

Abstract: Disclosed are an RF MEMS switch and a fabrication method thereof. According to an embodiment the RF MEMS switch is actuated with a low voltage and a low consumption power by using a piezoelectric capacitor actuated by being converted to mechanical energy from electric energy when an electric field is applied to the piezoelectric capacitor. A cap substrate can be formed by using an etching method, a chemical mechanical polishing method, an electroplating method, etc., and the RF MEMS switch has a high reliability and a high yield.

Abstract: A micro electro-mechanical system (MEMS) switch and a method for manufacturing the same are provided. The MEMS switch includes a substrate; signal lines formed on the substrate; main electrodes spaced apart by a distance and formed over the substrate; an actuating beam installed above the main electrodes at a certain height; a support unit to support the actuating beam; and sub-electrodes formed above the actuating beam at a distance from the actuating beam and facing the corresponding main electrodes. The method includes depositing and patterning a metal layer on a substrate; depositing and patterning a sacrificial layer to form actuator beam support holes and first sub-electrode contact holes; depositing and patterning an actuating beam layer on the sacrificial layer, thereby forming spacers; depositing and patterning second sub-electrode contact holes from another sacrificial layer; depositing and patterning a sub-electrode layer on the sacrificial layer; and removing the two sacrificial layers.

Abstract: An on-chip antenna switching scheme for Gigahertz frequencies where for the transmission path a first on-chip switching means is coupled between an on-chip power amplifier and an antenna. In the receiving path a second on-chip switching means at an input to an on-chip low noise amplifier (LNA) connects to ground. Coupled off-chip between the first switching means and antenna and antenna and the second switching means are impedance matching means and a half and a quarter wavelength line, respectively. In transmission mode both switching means are closed, in receiving mode both switching means are open. This allows for optimal transmission of the signal in either direction.

Abstract: A switch includes a first member, one end of which being secured to a substrate, multiple first beam portions respectively having multiple first contact portions, one ends of the multiple beam portions being secured to the first member, multiple contact switch portions connected in parallel, the multiple first contact portions and multiple second contact portions being in a contact state or in a non-contact state in the multiple contact switch portions, and resistors arranged respectively between the multiple contact switch portions and a common connection point to which the multiple contact switch portions are coupled. When at least one of the multiple switch portions is in a contact state, one of the resistors corresponding to the at least one of the multiple switch portions in a contact state has a resistance value greater than another one of the resistors corresponding to at least one of the multiple contact switch portions that is in a non-contact state.

Abstract: It is to provide an MEMS switch easy to manufacture, microscopic, and capable of obtaining a sufficient ON/OFF capacitance change ratio. An MEMS switch includes a substrate 46, a conductive beam 42 formed on a surface of the substrate, and three-layer structure beams B1 and B2 formed on the surface of the substrate and disposed to be opposed to the conductive beam.

Abstract: An RF assembly of a multiport switch is disclosed. The RF assembly includes an RF cavity housing and a cover. The RF cavity housing includes a common port defined by a cavity in a surface of the RF cavity housing and at least another port defined by a trough in the surface of the RF cavity housing. The trough is connected to the cavity. When covered by the cover, the trough defines a channel connected at one end to the cavity. The distance between opposing surfaces of the RF cavity housing and the cover at a proximal end of the channel is smaller than the corresponding distance of a portion of the channel immediately adjacent the proximal end. A multiport switch having the RF assembly is also disclosed.

Abstract: An interconnect module and a method of manufacturing the same. The method of making an interconnect module on a substrate comprises forming an interconnect section on the substrate. The interconnect section comprises at least two metal interconnect layers separated by a dielectric layer. The method further comprises forming a passive device on the substrate at a location laterally adjacent to the interconnect section. The passive device comprises at least one moveable element comprising a metal layer. The method further comprises forming the metal layer and one of the at least two metal interconnect layers from substantially the same material.

Abstract: A MEM switch is described having a free moving element within in micro-cavity, and guided by at least one inductive element. The switch consists of an upper inductive coil; an optional lower inductive coil, each having a metallic core preferably made of permalloy; a micro-cavity; and a free-moving switching element preferably also made of magnetic material. Switching is achieved by passing a current through the upper coil, inducing a magnetic field in the coil element. The magnetic field attracts the free-moving magnetic element upwards, shorting two open wires and thus, closing the switch. When the current flow stops or is reversed, the free-moving magnetic element drops back by gravity to the bottom of the micro-cavity and the wires open. When the chip is not mounted with the correct orientation, gravity cannot be used. In such an instance, a lower coil becomes necessary to pull the free-moving switching element back and holding it at its original position.

Abstract: A transponder system that integrates redundancy and beam selection capabilities is disclosed. The transponder system comprises an amplifier network having a plurality of amplifiers; an antenna network, comprising a plurality of antennae; an output switching network, including a first output switching network switch, selectably coupling one of the amplifiers to one of the plurality of antennae at a first output switching network switch first switch state and to a second output switching network switch in a first output switch network switch second switch state, wherein the second output switching network switch is selectably coupled to a second one of the plurality of antennae in a second output switching network switch first switch state and to a third one of the plurality of antennae in a second output switching network switch second switch state.

Abstract: An apparatus and method to provide a micro-electromechanical systems (MEMS) radio frequency (RF) switch module with a vertical via. The MEMS RF switch module includes a MEMS die coupled to a cap section. The vertical via passes through the cap section to electrically couple an RF switch array of the MEMS die to a printed circuit board (PCB). In one embodiment, the MEMS die includes a trace ring surrounding at least a portion of the RF switch array so that a signal may enter or exit the MEMS RF switch module using the vertical via without crossing the trace ring.

Abstract: An electromechanical switch includes an actuation electrode, an anchor, a cantilever electrode, a contact, and signal lines. The actuation electrode and anchor are mounted to a substrate. The cantilever electrode is supported by the anchor above the actuation electrode. The contact is mounted to the cantilever electrode. The signal lines are positioned to form a closed circuit with the contact when an actuation voltage is applied between the actuation electrode and the cantilever electrode causing the cantilever electrode to bend towards the actuation electrode in a zipper like movement starting from a distal end of the cantilever electrode.

Abstract: RF switching system (100, 200) formed from a structure (102, 202) comprised of dielectric material. The structure can have two or more faces (104, 204), with at least one face located in a plane exclusive of at least a second one of the faces. For example, the structure can define a geometric shape that is a polyhedron. RF switches (106, 206) can be disposed on two or more of the faces. Conductive RF feed stubs (110, 210) are provided for each RF switch extending from an interconnection point (114, 214) to electrical contact terminals (116, 216) that are respectively connected to the RF switches. The interconnection point is located within the structure at a location generally medial to the two or more of terminals.