Abstract: A thin film piezoelectric acoustic wave resonator and a manufacturing method therefor, and a filter. The thin film piezoelectric acoustic wave resonator includes: a first base, an upper electrode, a piezoelectric plate body, a lower electrode and an isolation cavity. The upper electrode, the piezoelectric plate body and the lower electrode are arranged on an upper surface of the first base and are stacked sequentially from top to bottom. The upper electrode, the piezoelectric plate body and the lower electrode have an overlapping region in a direction perpendicular to the surface of the piezoelectric plate body, in which a first gap is formed between the piezoelectric plate body and the upper electrode, and a second gap is formed between the piezoelectric plate body and the lower electrode. The isolation cavity surrounds the periphery of the piezoelectric plate body and connects the first and second gaps together. At least one connecting bridge is arranged between the piezoelectric plate body and the base.

Abstract: Devices and methods related to film bulk acoustic resonators. In some embodiments, a film bulk acoustic resonator can be manufactured by a method that includes forming a first electrode having a first lateral shape and providing a piezoelectric layer on the first electrode. The method can further include forming a second electrode having a second lateral shape on the piezoelectric layer such that the piezoelectric layer is between the first and second electrodes. The forming of the first electrode and the forming of the second electrode can include selecting and arranging the first and second lateral shapes to provide a resonator shape defined by an outline of an overlap of the first and second electrodes, such that the resonator shape includes N curved sections joined by N vertices of an N-sided polygon, and such that the resonator shape has no axis of symmetry.

Abstract: A coupled resonator filter device is disclosed. The coupled resonator filter device includes a substrate with one or more acoustic reflector layers disposed over the substrate, a first lower electrode disposed over the one or more acoustic reflector layers, a first piezoelectric layer disposed over the first lower electrode, and a first upper electrode disposed over the first piezoelectric layer. The coupled resonator filter device further includes one or more acoustic coupling layers disposed over the first upper electrode, a second lower electrode disposed over the one or more acoustic coupling layers, a second piezoelectric layer disposed over the second lower electrode, a second upper electrode disposed over the second piezoelectric layer, and a first tuning capacitor having a first upper plate coupled to the first upper electrode and a first lower plate coupled to the first lower electrode.

Abstract: A bulk acoustic wave (BAW) resonator is disclosed. The BAW resonator includes: a first electrode, a second electrode, a piezoelectric layer disposed between the first electrode and the second electrode, a substrate positioned adjacent to the second electrode, and an active area having at least one biarc boundary.

Abstract: Aspects of the disclosure are directed to a bandpass filter including a first, second, third and fourth resonators, wherein the second and third resonators are in parallel, wherein the first resonator includes a first and second terminals, wherein the second resonator includes a second resonator top terminal and a second resonator bottom terminal, wherein the third resonator includes a third resonator top terminal and a third resonator bottom terminal, wherein the fourth resonator includes a third terminal and a fourth terminal; wherein the first terminal is coupled to the second resonator top terminal, wherein the second terminal is coupled to the third resonator top terminal, wherein the third terminal is coupled to the third resonator bottom terminal, wherein the fourth terminal is coupled to the second resonator bottom terminal; a first inductor coupled to the first and third terminals; and a second inductor coupled to the second and fourth terminals.

Abstract: A piezoelectric film that includes crystalline AlN; at least one first element partially replacing Al in the crystalline AlN; and a second element doping the crystalline AlN and which has an ionic radius smaller than that of the first element and larger than that of Al.

Abstract: The present invention provides tunable film bulk acoustic resonators (FBARs) with the resonant frequency of the acoustic wave to be excited and to be transmitted tuned by digital to analog converters which convert an input digital signal to an output DC voltage and provide DC bias voltages to the FBARs through integrated thin film biasing resistors. The polarity and the value of the output DC voltage are controlled by the input digital signal to achieve selection and tuning of the resonant frequency of the FBARs. A plurality of the tunable FBARs are connected to form microwave filters with tunable bandpass frequencies and oscillators with selectable resonating frequencies by varying the input digital signals applied to the digital to analog converters.

Abstract: An acoustic resonator includes a substrate, and a resonant portion comprising a center portion in which a first electrode, a piezoelectric layer and a second electrode are sequentially laminated on the substrate, and an extending portion disposed along a periphery of the center portion, wherein the resonant portion is configured to have an asymmetrical polygonal plane, an insertion layer is disposed below the piezoelectric layer in the extending portion, and the piezoelectric layer is configured to have a top surface which is raised to conform to a shape of the insertion layer, and the insertion layer is configured to have an asymmetrical polygonal shape corresponding to a shape of the extending portion.

Abstract: Embodiments of resonator circuits and modulating resonators and are described generally herein. One or more acoustic wave resonators may be coupled in series or parallel to generate tunable filters. One or more acoustic wave resonances may be modulated by one or more capacitors or tunable capacitors. One or more acoustic wave modules may also be switchable in a filter. Other embodiments may be described and claimed.

Abstract: A piezoelectric laminate including a base and a first piezoelectric layer formed above the base and including potassium sodium niobate. The first piezoelectric layer is shown by a compositional formula (KaNa1-a)xNbO3, “a” and “x” in the compositional formula being respectively 0.1<a<1 and 1?x?1.2.

Abstract: A bulk acoustic wave (BAW) resonator, comprises: a first electrode; a second electrode comprising a plurality of sides. At least one of the sides comprises a cantilevered portion. The bulk acoustic wave (BAW) resonator also comprises a piezoelectric layer disposed between the first and second electrodes. The piezoelectric layer comprises a piezoelectric material doped with a plurality of rare earth elements, and the cantilevered portion extends above the piezoelectric layer. The bulk acoustic wave (BAW) resonator comprises a gap between the cantilevered portion and the piezoelectric layer.

Abstract: Tunable MEMS resonators having adjustable resonance frequency and capable of handling large signals are described. In one exemplary design, a tunable MEMS resonator includes (i) a first part having a cavity and a post and (ii) a second part mated to the first part and including a movable layer located under the post. Each part may be covered with a metal layer on the surface facing the other part. The movable plate may be mechanically moved by a DC voltage to vary the resonance frequency of the MEMS resonator. The cavity may have a rectangular or circular shape and may be empty or filled with a dielectric material. The post may be positioned in the middle of the cavity. The movable plate may be attached to the second part (i) via an anchor and operated as a cantilever or (ii) via two anchors and operated as a bridge.

Abstract: Film bulk acoustic resonators (FBARs) having frame elements and filters including the resonators are described.

Abstract: An RF telemetry receiver circuit for active implantable medical devices. The baseband binary signal (Db) is doubly modulated by a low frequency carrier (Fm) and by a high frequency carrier (Fc). The receiver circuit is a semi-passive non heterodyne circuit, devoid of a local oscillator and mixer. It comprises an antenna (104), a passive bandpass filter (108) centered on the high-frequency carrier (Fc), a passive envelope detector (120-126) and a, digital demodulator (116). The envelope detector comprises a first diode circuit (120) of non-coherent detection, an active bandpass filter (122) centered on a frequency (2.Fm) twice the low frequency carrier and having a bandwidth (2.Db) twice the baseband bandwidth, and a second diode circuit (124) of non-coherent detection, outputting a baseband signal applied to the digital demodulation stage (116).

Abstract: Switchable and/or tunable filters, methods of manufacture and design structures are disclosed herein. The method of forming the filters includes forming at least one piezoelectric filter structure comprising a plurality of electrodes formed on a piezoelectric substrate. The method further includes forming a micro-electro-mechanical structure (MEMS) comprising a MEMS beam formed above the piezoelectric substrate and at a location in which, upon actuation, the MEMS beam shorts the piezoelectric filter structure by contacting at least one of the plurality of electrodes.

Abstract: An acoustic wave device includes a main resonator and a sub resonator each having a substrate, a lower electrode provided on the substrate, a piezoelectric film provided on the lower electrode, and an upper electrode provided on an upper side of the piezoelectric film. A frequency control film is provided on an upper side of a resonance area in which the upper electrode and the lower electrode face each other in at least one of the main resonator and the sub resonator. The frequency control film has multiple convex patterns, and the convex patterns are arranged with a common pitch for spurious adjustment and with different areas in the main resonator and the sub resonator.

Abstract: Manufacturing a semiconductor structure including modifying a frequency of a Film Bulk Acoustic Resonator (FBAR) device though a vent hole of a sealing layer surrounding the FBAR device.

Abstract: Embodiments of resonator circuits and modulating resonators and are described generally herein. One or more acoustic wave resonators may be coupled in series or parallel to generate tunable filters. One or more acoustic wave resonances may be modulated by one or more capacitors or tunable capacitors. One or more acoustic wave modules may also be switchable in a filter. Other embodiments may be described and claimed.

Abstract: A method of manufacturing a ladder filter including first and second resonators includes: forming a piezoelectric film on an entire surface of a substrate that has respective lower electrodes of the first and second resonator formed thereon, an conductive film on the piezoelectric film, and a second film on the conductive film; forming a pattern of the second film in a prescribed region in the second area; forming a first film on an entire surface of the substrate; etching the first film, forming a pattern of the first film, the second film and the conductive film in the second area, and forming a pattern of the first film and the conductive film in the first area, to form respective upper electrodes from the conductor film; and thereafter, etching the piezoelectric film to form respective patterns of the piezoelectric film in the first and second areas, respectively.

Abstract: Disclosed are various embodiments of power source redundancy in a power supply for a rack mounted computing device. The power supply includes a plurality of AC power converters configured to receive power from corresponding power sources. A first AC power converter provides DC power to a common DC bus of the power supply. A second AC power converter provides DC power to the common DC bus in response to a change in the voltage level provided by the first AC power converter.

Abstract: This disclosure provides implementations of methods, apparatus and systems for producing acoustic wave devices and for selectively modifying one or more acoustic or electromechanical characteristics of such devices. In one aspect, a method includes depositing a structural layer over a substrate. The structural layer includes a plurality of structural portions, each being positioned over a corresponding device region. The method also includes arranging a mask layer over the structural layer. The mask layer includes a plurality of mask portions, each including a number of mask openings that expose a corresponding region of the structural portion. The method also includes accelerating dopant particles toward the mask layer. The accelerated dopant particles that proceed through the mask openings are impacted into the corresponding structural portion.

Abstract: A bulk acoustic wave resonator includes a substrate, a resonator section in which a piezoelectric film is sandwiched between a pair of electrodes, and a vibration region where the electrodes overlap when viewed in a film thickness direction is defined, an elastically deformable support section that connects the substrate and the resonator section, a membrane arranged between the resonator section and the substrate to face the vibration region of the resonator section and be fixed on the substrate with a space in between, and driver sections that are defined in the resonator section and the substrate adjacent to the vibration region and the membrane, and that move the resonator section toward and away from the substrate. The vibration region of the resonator section contacts the membrane when the driver sections move the resonator section close to the substrate.

Abstract: Aspects of the subject disclosure include, for example, obtaining a mechanical resonating structure comprising a compensating structure, where the compensating structure comprises one or more materials having an adaptive stiffness that reduces a variance in a resonating frequency of the mechanical resonating structure (f0), and adjusting at least one of a value of f0 of the obtained mechanical resonating structure or a value of a temperature for which temperature coefficient of frequency of the obtained mechanical resonating structure is approximately zero (T0) by altering a thickness of at least one targetable material of the mechanical resonating structure. Other embodiments are disclosed.

Abstract: An acoustic structure, comprising at least one acoustic resonator exhibiting at least one resonant frequency in a band of operating frequencies and an integrated capacitor, further comprises: a stack of layers, comprising at least one active layer of piezoelectric material or of ferroelectric material; the resonator being frequency tunable and being produced by a first subset of layers of the stack comprising the at least one active layer and at least two electrodes; the integrated capacitor being produced by a second subset of layers comprising the active layer and at least two electrodes; the first and second subsets of layers being distinguished by a modification of layers so as to exhibit different resonant frequencies.

Abstract: One embodiment of the present inventions sets forth a method for decreasing a temperature coefficient of frequency (TCF) of a MEMS resonator. The method comprises lithographically defining slots in the MEMS resonator beams and filling the slots with a compensating material (for example, an oxide) wherein the temperature coefficient of Young's Modulus (TCE) of the compensating material has a sign opposite to a TCE of the material of the resonating element.

Abstract: A method of making a handheld, electromechanical device useful in mammalian body-care includes the steps of: a) forming a one-piece housing having a single opening defined by a rim; b) assembling a unitary insert; c) inserting the unitary insert through the single opening of the housing; d) removably applying a cover having an exterior surface to close the opening of the one-piece housing; and e) attaching the unitary insert to at least one of the one-piece housing and the removable cover. The rim of the one-piece housing circumscribes a rim area, and the one-piece housing has a projected area that is substantially larger than the rim area. The unitary insert is dimensioned to be insertable through the opening defined by the rim, and it has a frame having disposed thereon electromechanical elements interconnected in an electrical circuit. The cover closes off the opening of the one-piece housing.

Abstract: A filtering circuit with BAW type acoustic resonators having at least a first quadripole and a second quadripole connected in cascade, each quadripole having a branch series with a first acoustic resonator of type BAW and a branch parallel with each branch having an acoustic resonator of type BAW, the first acoustic resonator having a frequency of resonance series approximately equal to the frequency of parallel resonance of the second acoustic resonator, the branch parallel of the first quadripole having a first capacitance connected in series with the second resonator and, in parallel with the capacitance, a first switching transistor to short circuit the capacitance.

Abstract: A variable capacitance element includes a piezoelectric substrate, a buffer layer located on the piezoelectric substrate with an orientation, a dielectric layer located on the buffer layer and having a relative dielectric constant that varies in accordance with an applied voltage, and a first electrode and a second electrode arranged to apply an electric field to the dielectric layer.

Abstract: An integrated resonator apparatus comprises a piezoelectric resonator, an acoustic Bragg reflector coupled to the piezoelectric resonator, and a substrate on which the acoustic Bragg reflector is disposed. The apparatus also includes an active heater layer covering the piezoelectric resonator. Heat produced by the active heater layer is controllable by an amount of current provided through the heater layer.

Abstract: A tunable filter that is capable of magnifying a pass band width or increasing a frequency variable amount includes a resonator circuit portion provided in at least one of a series arm connecting an input terminal and an output terminal to each other and a parallel arm connecting the series arm and a ground potential to each other, a first variable capacitor is connected in series to the resonator circuit portion and a second variable capacitor is connected in parallel to the resonator circuit portion. The resonator circuit portion includes a piezoelectric substrate including LiNbO3 or LiTaO3, an elastic wave resonator including an electrode located on the piezoelectric substrate, and a bandwidth extending inductance Lx, Lx connected to the elastic wave resonator.

Abstract: To provide a vibration actuator, a lens barrel, a camera, a manufacturing method for a vibration body and a manufacturing method for a vibration actuator, which have a high driving efficiency and can lead to easy manufacture. A vibration actuator of the present invention is provided with an elastic body and an electromechanical transducer element sintered onto the elastic body in the state that the element is divided into a plurality of areas by a groove-shaped border portion.

Abstract: A method for forming a resonator including a resonant element, the resonant element being at least partly formed of a body at least partly formed of a first conductive material, the body including open cavities, this method including the steps of measuring the resonator frequency; and at least partially filling said cavities.

Abstract: An acoustic resonator device includes an annular acoustic resonator, a heater coil and a heat sensor. The annular acoustic resonator is positioned over a trench formed in a substrate of the acoustic resonator device. The heater coil is disposed around a perimeter of the annular acoustic resonator, the heater coil including a resistor configured to receive a heater current. The heat sensor is configured to adjust the heater current in response to a temperature of the heater coil.

Abstract: A bulk acoustic wave resonator has an adjustable resonance frequency. A piezoelectric element is provided having first and second electrodes. A switching element is provided in the form of a MEMS structure which is deformable between a first and second position. The switching element forms an additional electrode that is selectively disposed on top of, and in contact with, one of the first and second electrodes. This causes a total thickness of the electrode of the resonator to be changed resulting in a modification of the resonance frequency of the resonator.

Abstract: Tunable filter structures, methods of manufacture and design structures are disclosed. The method of forming a filter structure includes forming a piezoelectric resonance filter over a cavity structure. The forming of the piezoelectric resonance filter includes: forming an upper electrode on one side of a piezoelectric material; and forming a lower electrode on an opposing side of the piezoelectric material. The method further includes forming a micro-electro-mechanical structure (MEMS) cantilever beam at a location in which, upon actuation, makes contact with the piezoelectric resonance filter.

Abstract: Methods and apparatus for temperature control of devices and mechanical resonating structures are described. A mechanical resonating structure may include a heating element and a temperature sensor. The temperature sensor may sense the temperature of the mechanical resonating structure, and the heating element may be adjusted to provide a desired level of heating. Optionally, additional heating elements and/or temperature sensors may be included.

Abstract: An acoustic wave filter including piezoelectric thin film resonators, in which at least two of the piezoelectric thin film resonators including: a substrate; a piezoelectric film located on the substrate; a lower electrode and an upper electrode located across at least a part of the piezoelectric film; a mass load film for a frequency control located in a resonance region where the lower electrode and the upper electrode face each other, and having a shape different from that of the resonance region; and a temperature compensation film having a temperature coefficient of an elastic constant opposite in sign to that of the piezoelectric film, at least a part of the temperature compensation film being located between the lower electrode and the upper electrode in the resonance region, and areas of mass load films of said at least two of the piezoelectric thin film resonators are different from each other.

Abstract: Provided is a bulk acoustic wave resonator (BAWR). The BAWR may include a bulk acoustic wave resonance unit and an anti-resonant frequency modifying unit to modify an anti-resonant frequency generated from the bulk acoustic wave resonance unit.

Abstract: Tunable MEMS resonators having adjustable resonance frequency and capable of handling large signals are described. In one exemplary design, a tunable MEMS resonator includes (i) a first part having a cavity and a post and (ii) a second part mated to the first part and including a movable plate located under the post. Each part may be covered with a metal layer on the surface facing the other part. The movable plate may be mechanically moved by a DC voltage to vary the resonance frequency of the MEMS resonator. The cavity may have a rectangular or circular shape and may be empty or filled with a dielectric material. The post may be positioned in the middle of the cavity. The movable plate may be attached to the second part (i) via an anchor and operated as a cantilever or (ii) via two anchors and operated as a bridge.

Abstract: An acoustic resonator comprises (a) a substrate having atop surface and a bottom surface, a first end portion and an opposite, second end portion, and a body portion defined therebetween; (b) an acoustic mirror having a top surface and a bottom surface, a first end portion and an opposite, second end portion, and a body portion defined therebetween, wherein the bottom surface is formed on the top surface of the substrate; (c) a first electrode having a top surface and a bottom surface, a first end portion and an opposite, second end portion, and a body portion defined therebetween, wherein the bottom surface is formed on the top surface of the acoustic mirror; (d) a piezoelectric layer having a top surface and a bottom surface, a first end portion and an opposite, second end portion, and a body portion defined therebetween, wherein the bottom surface is formed on the top surface of the first electrode; and (e) a second electrode having a top surface and a bottom surface, a first end portion and an opposite, s

Abstract: Embodiments of resonator circuits and modulating resonators and are described generally herein. One or more acoustic wave resonators may be coupled in series or parallel to generate tunable filters. One or more acoustic wave resonances may be modulated by one or more capacitors or tunable capacitors. One or more acoustic wave modules may also be switchable in a filter. Other embodiments may be described and claimed.

Abstract: A tunable filter that is capable of magnifying a pass band width or increasing a frequency variable amount includes a resonator circuit portion provided in at least one of a series arm connecting an input terminal and an output terminal to each other and a parallel arm connecting the series arm and a ground potential to each other, a first variable capacitor is connected in series to the resonator circuit portion and a second variable capacitor is connected in parallel to the resonator circuit portion. The resonator circuit portion includes a piezoelectric substrate including LiNbO3 or LiTaO3, an elastic wave resonator including an electrode located on the piezoelectric substrate, and a bandwidth extending inductance Lx, Lx connected to the elastic wave resonator.

Abstract: Disclosed herein is a resonator including, a vibrating portion having a conductor portion, and three or more insulating portions provided so as to electrically separate the conductor portion into a plurality of blocks, wherein when a potential difference is caused across both ends in each of the three or more insulating portions, the vibrating portion carries out a resonance vibration based on a longitudinal vibration in accordance with a frequency of an A.C. signal inputted to each of corresponding ones of the plurality of blocks in the conductor portion.

Abstract: A micro-electro-mechanical-system resonator, includes: a substrate; a fixed electrode formed on the substrate; and a movable electrode, arranged facing the fixed electrode and driven by an electrostatic attracting force or an electrostatic repulsion force that acts on a gap between the fixed electrode and the movable electrode. An internal surface of a support beam of the movable electrode facing the fixed electrode has an inclined surface.

Abstract: An acoustic resonator includes a first electrode, a second electrode, and a barium strontium titanate (BST) dielectric layer disposed between the first electrode and the second electrode, where the acoustic resonator is switched on as a resonator with a resonant frequency if a DC (direct current) bias voltage is applied across the BST dielectric layer. The acoustic resonator is also switched off if no DC bias voltage is applied across the BST dielectric layer. Furthermore, the resonant frequency of the acoustic resonator can be tuned based on a level of the DC bias voltage, with the resonant frequency increasing as the level of the DC bias voltage applied to the BST acoustic resonator increases.

Abstract: System and method for a microelectromechanical system (MEMS) is disclosed. A preferred embodiment comprises a first anchor region, a vibrating MEMS structure fixed to the first anchor region, a first electrode adjacent the vibrating MEMS structure, a second electrode adjacent the vibrating MEMS structure wherein the vibrating MEMS structure is arranged between the first and the second electrode.

Abstract: A tunable MEMS filter is disclosed, having a substrate with first and second isolated substrate areas. First and second anchor points are coupled to the substrate. A base is coupled to the first and second anchor points by first and second coupling beams, respectively. A dielectric layer is coupled to the base. An input conductor is coupled to the at least one dielectric layer. An output conductor is coupled to the at least one dielectric layer. A method of tuning a center frequency and a bandwidth of a MEMS resonator filter is also disclosed. A first bias voltage is adjusted between a base layer and input and output conductor layers. A second bias voltage is adjusted between the base layer and isolated substrate areas. The center frequency and the bandwidth are determined until the adjustments to the bias voltages provide a desired center frequency and a desired bandwidth.

Abstract: A resonant circuit includes a substrate; a MEMS resonator including a fixed electrode and a movable electrode formed above the substrate and having a first terminal and a second terminal, the movable electrode having a movable portion opposing at least a part of the fixed electrode; a first input-output terminal connected to the first terminal connected to one of the fixed electrode and the movable electrode of the MEMS resonator; a second input-output terminal connected to the second terminal connected to an other one of the fixed electrode and the movable electrode of the MEMS resonator; a voltage applying unit supplying a potential to at least the first terminal to apply a bias voltage between the first and the second terminals; and a variable capacitance connected between the first terminal and the first input-output terminal to allow a capacitance value to be changed by a change in a potential difference between opposite ends of the variable capacitance.

Abstract: A groove is formed on a handling member, on a face to be fixed to an element, the groove making up a portion of a channel that externally communicates in the state of being fixed to the element. The handling member is fixed so that the cleavage direction of the vibrating membrane and the edge direction of the groove of the handling member intersect. Thus, the probability that a membrane will break during handling or processing of the substrate is reduced, and the handling member can be quickly removed from the substrate.

Abstract: A handling member is prepared that provides a channel that can withstand subsequent back face processing as to a substrate having elements made up of a substrate and a membrane, and the handling member is fixed to the substrate so that at least a portion within the elements are supported by the handling member. This provides a manufacturing method wherein the physical strength of an element at the time of manufacturing an electromechanical transducing apparatus is strengthened, and the handling member is easily detached in a short time after processing of the element.