Abstract: A method and apparatus for modifying or controlling a resonator connected to a signal loop having an input, an output, and a closed loop frequency response. The signal loop has a primary resonator having a primary frequency response. There is at least one adjustable resonator having an adjustable frequency and a secondary Q-factor. An adjustable scaling block applies a gain factor. A controller is connected to the at least one adjustable resonator and the adjustable scaling block. The controller has instructions to adjust the closed loop frequency response toward a desired closed loop frequency response by controlling the adjustable frequency of the at least one adjustable resonator and the gain factor of the adjustable scaling block.

Abstract: Acoustic resonators and filter devices. An acoustic resonator includes a piezoelectric plate having front and back surfaces, a portion of the piezoelectric plate forming a diaphragm, and a conductor pattern on the front surface, the conductor pattern including an interdigital transducer (IDT), fingers of the IDT on the diaphragm. A thickness of the interleaved fingers is greater than or equal to 0.85 times a thickness of the piezoelectric plate and less than or equal to 2.5 times the thickness of the piezoelectric plate. The IDT comprises a first portion having a first pitch and a first mark and a second portion having a second pitch and a second mark not equal to the first pitch and first mark.

Abstract: A Micro-Electro-Mechanical System (MEMS) device comprises a piezoelectric transducer having a first frequency behavior, wherein the piezoelectric transducer comprises a piezoelectric trimming region, and control circuitry to provide a bias signal to the piezoelectric trimming region of the piezoelectric transducer for adjusting a second frequency behavior of the piezoelectric transducer.

Abstract: A bulk acoustic resonator filter includes: a series bulk acoustic resonator electrically connected, in series, between first and second ports through which a radio frequency (RF) signal passes; a second shunt bulk acoustic resonator, electrically shunt connected between the series bulk acoustic resonator and a ground and having a resonance frequency lower than that of the series bulk acoustic resonator; and a first shunt bulk acoustic resonator electrically connected to the second shunt bulk acoustic resonator in series and having a resonance frequency higher than that of the second shunt bulk acoustic resonator. One or both of the series bulk acoustic resonator and the first shunt bulk acoustic resonator includes a first electrode disposed above a substrate; a piezoelectric layer disposed on the first electrode; a second electrode disposed on the piezoelectric layer; and a trench formed in an upper surface or above the second electrode and recessed downwardly.

Abstract: Acoustic wave devices are disclosed. The devices include a substrate, a bi-layer reflector and an acoustic wave resonator. The bi-electric reflector is above the substrate and includes a first layer that has a first acoustic impedance, and a second layer that has a second acoustic impedance lower than the first acoustic impedance. The first layer has a first surface that includes a floating region that provides a ceiling of a cavity. The second layer is on top of the floating region of the first layer. The acoustic wave resonator is on top of the second layer of the bi-layer reflector. The acoustic wave resonator includes a piezoelectric layer, an electrode and a counter-electrode such that application of a radio frequency voltage between the electrode and the counter-electrode creates acoustic resonance waves in the piezoelectric layer.

Abstract: A laterally excited bulk acoustic wave device is disclosed. The laterally excited bulk acoustic wave device can include a support substrate, a solid acoustic mirror on the support substrate, a piezoelectric layer on the solid acoustic mirror, and an interdigital transducer electrode on the piezoelectric layer. The interdigital transducer electrode is arranged to laterally excite a bulk acoustic wave.

Abstract: An acoustic wave device includes a support substrate, a piezoelectric layer, and an IDT electrode. The support substrate is made of quartz. The piezoelectric layer is provided on the support substrate and is made of LiTaO3. The IDT electrode is on the piezoelectric layer and includes electrode fingers. The IDT electrode is on a negative surface side of the piezoelectric layer. The cut angle of the piezoelectric layer is equal to or more than about 39° Y and equal to or less than about 48° Y.

Abstract: A wide bandwidth time division duplex (TDD) transceiver includes a transmitter, a receiver, and a bandpass filter implemented with a plurality of acoustic resonators including at least one shunt resonator and at least one series resonator. A transmit/receive switch is configured to selectively connect a first terminal of the bandpass filter to either an output of the transmitter or an input of the receiver. Each of the plurality of acoustic resonators is a high power transversely-excite film bulk acoustic resonator.

Abstract: Acoustic filters are disclosed. A bandpass filter has a passband between a lower band edge and an upper band edge. The bandpass filter includes a plurality of transversely-excited film bulk acoustic resonators (XBARs) connected in a ladder filter circuit. The plurality of XBARs includes at least one lithium tantalate (LT) XBAR and at least one lithium niobate XBAR. Each of the at least one LT XBAR includes an LT piezoelectric plate with Euler angles (0°, ?, 0°), where ? is greater than zero and less than or equal to 40 degrees.

Abstract: Acoustic resonator devices, filters, and methods are disclosed. An acoustic resonator includes a substrate and a lithium niobate (LN) plate having front and back surfaces and a thickness ts. The back surface is attached to a surface of the substrate. A portion of the LN plate forms a diaphragm spanning a cavity in the substrate. An interdigital transducer (IDT) is formed on the front surface of the LN plate with interleaved fingers of the IDT disposed on the diaphragm. The LN plate and the IDT are configured such that a radio frequency signal applied to the IDT excites a shear primary acoustic wave in the diaphragm. Euler angles of the LN plate are [0°, ?, 0° ], where 0???60°. A thickness of the interleaved fingers of the IDT is greater than or equal to 0.8 ts and less than or equal to 2.0 ts.

Abstract: A sensor that includes a substrate with a first side having a cavity extending into the first side. A resonator is connected to the substrate and extends over the cavity with the resonator including first and second electrodes overlapping on opposing sides of the piezoelectric crystal. The substrate is connected to the resonator such that one or more physical parameters exerted on the substrate are transferred to the resonator.

Abstract: An electronic component includes a substrate, a functional portion, external connection conductor portions, and first and second heat-conducting portions. The functional portion is located on first principal surface of the substrate and portion generates heat during operation. The external connection conductor portions are located directly on the first principal surface of the substrate or located below the first principal surface without direct contact with the substrate. The second principal surface of the substrate includes first and second regions. When viewed in plan in a thickness direction of the substrate, the first region does not overlap the functional portion, and the second region coincides with the functional portion. The first heat-conducting portion is located directly on all or a portion of the first region or located over all or a portion of the first region without direct contact with the substrate.

Abstract: There is disclosed acoustic resonators and filter devices. An acoustic resonator device includes a piezoelectric plate, a portion of the piezoelectric plate forming a diaphragm, a thickness of the piezoelectric plate is greater than or equal to 300 nm and less than or equal to 500 nm, and an interdigital transducer (IDT) with interleaved fingers of the IDT on the diaphragm. The piezoelectric plate and the IDT are configured such that a radio frequency signal applied to the IDT excites a primary shear acoustic mode in the diaphragm.

Abstract: Acoustic filters, resonators and methods are disclosed. An acoustic resonator includes a substrate and a piezoelectric plate including a diaphragm that spans a cavity in the substrate. A conductor pattern includes an interdigital transducer (IDT) with interleaved parallel fingers on the diaphragm. A ratio of a width of either of two adjacent parallel fingers and a center-to-center spacing between the two adjacent parallel fingers is greater than or equal to 0.2 and less than or equal to 0.3.

Abstract: A rotation sensor, including: (i) a substrate having a top surface and an interior bottom surface; (ii) an electrode module positioned on the top surface of the substrate and including a first set of electrodes configured to generate a bulk acoustic wave directly into the substrate, wherein at least a portion of the bulk acoustic wave is transduced into a shear wave upon reflection on the interior bottom surface of the substrate without use of a reflector, and a second set of electrodes configured to detect the shear wave; and (iii) a controller in communication with the first set and second set of electrodes and configured to determine, based on the detected shear wave, an effect of Coriolis force on the sensor.

Abstract: An RF diplexer circuit device using modified lattice, lattice, and ladder circuit topologies. The diplexer can include a pair of filter circuits, each with a plurality of series resonator devices and shunt resonator devices. In the ladder topology, the series resonator devices are connected in series while shunt resonator devices are coupled in parallel to the nodes between the resonator devices. In the lattice topology, a top and a bottom serial configurations each includes a plurality of series resonator devices, and a pair of shunt resonators is cross-coupled between each pair of a top serial configuration resonator and a bottom serial configuration resonator. The modified lattice topology adds baluns or inductor devices between top and bottom nodes of the top and bottom serial configurations of the lattice configuration. A multiplexing device or inductor device can be configured to select between the signals coming through the first and second filter circuits.

Abstract: A resonance device is provided that includes a resonator including upper electrodes, a lower electrode, and a piezoelectric thin film formed therebetween. An upper cover is provided with a first surface facing the upper electrodes of the resonator. A power supply terminal is provided on a second surface of the upper cover with the power supply terminal electrically connected to the upper electrodes. Another power supply terminal is on the second surface of the upper cover and is electrically connected to the upper electrodes. A ground terminal is provided on the second surface of the upper cover and is electrically connected to the lower electrode. An area of each power supply terminal are different from one other such that a capacitance formed between the first power supply terminal and the ground terminal is approximately equal to a capacitance formed between the second power supply terminal and the ground terminal.

Abstract: Acoustic filters, resonators and methods of making acoustic filters are disclosed. An acoustic resonator device includes a substrate. A back surface of a piezoelectric plate is attached to the substrate, a portion of the piezoelectric plate forming a diaphragm that spans a cavity in the substrate. A conductor pattern is formed on the front surface of the piezoelectric plate, the conductor pattern including an interdigital transducer (IDTs) with interleaved fingers of the IDT disposed on the diaphragm. A ratio of the mark of the interleaved fingers to the pitch of the interleaved fingers is greater than or equal to 0.2 and less than or equal to 0.3.

Abstract: Acoustic filters, resonators and methods are disclosed. An acoustic resonator device includes a piezoelectric plate forming a diaphragm and a conductor pattern formed on the piezoelectric plate, the conductor pattern including an interdigital transducer (IDT). Interleaved fingers of the IDT are on the diaphragm. A ratio of the mark of the interleaved fingers to a pitch of the interleaved fingers is greater than or equal to 0.2 and less than or equal to 0.3.

Abstract: Frequency stabilization is provided in a microelectromechanical systems (MEMS) oscillator via tunable internal resonance (IR). A device comprises a MEMS resonator comprising a stepped-beam structure that is a thin-layer structure. The resonator may be configured to implement IR. The stepped-beam structure may be configured to provide flexibility to adjust modal frequencies into a n:m ratio, wherein n and m are integers. The thin-layer structure provides frequency tunability by controlling the mid-plane stretching effect with an applied DC bias. The thin-layer structure compensates for a frequency mismatch from a n:m ratio due to a fabrication error. The MEMS resonator may be an oscillator.

Abstract: Acoustic filters, resonators and methods of making acoustic filters are disclosed. An acoustic resonator device includes a substrate. A back surface of a piezoelectric plate is attached to the substrate, a portion of the piezoelectric plate forming a diaphragm that spans a cavity in the substrate. A conductor pattern is formed on the front surface of the piezoelectric plate, the conductor pattern including an interdigital transducer (IDTs) with interleaved fingers of the IDT disposed on the diaphragm. A ratio of the mark of the interleaved fingers to the pitch of the interleaved fingers is greater than or equal to 0.2 and less than or equal to 0.3.

Abstract: The present disclosure provides a differential resonator and a MEMS sensor. The differential resonator includes a substrate, a first resonator, a second resonator and a coupling mechanism. The first resonator is connected with the second resonator, and the first resonator and the second resonator are movably connected with the substrate. The coupling mechanism includes a first guide beam, a second guide beam, a first coupling beam, a second coupling beam, a first connecting piece and a second connecting piece. The first guide beam and the second guide beam are arranged on two opposite sides of a direction perpendicular to a vibration direction of the first resonator or the second resonator. The first coupling beam is connected with the first guide beam, the second guide beam and the first resonator. The second coupling beam is connected with the first guide beam, the second guide beam and the second resonator.

Abstract: Aspects of this disclosure relate to a bulk acoustic wave device with a floating raised frame structure. The bulk acoustic wave device includes a first electrode, a second electrode, a piezoelectric layer positioned between the first electrode and the second electrode, and a floating raised frame structure positioned on a same side of the piezoelectric layer as the first electrode and spaced apart from the first electrode. The floating raised frame structure is at a floating potential. The bulk acoustic wave device can suppress a raised frame mode. Related methods, filters, multiplexers, radio frequency front ends, radio frequency modules, and wireless communication devices are disclosed.

Abstract: A microelectromechanical resonator includes a resonator member suspended over a surface of a substrate by at least one anchor that is connected to the substrate. The resonator member includes outer and inner frames that are concentrically arranged and mechanically coupled by support structures extending therebetween. Related apparatus and gyroscopes are also discussed.

Abstract: An RF filter system including a plurality of BAW resonators arranged in a circuit, the circuit including a serial configuration of resonators and a parallel shunt configuration of resonators, the circuit having a circuit response corresponding to the serial configuration and the parallel configuration of the plurality of bulk acoustic wave resonators including a transmission loss from a pass band having a bandwidth from 5.170 GHz to 5.330 GHz. Resonators include a support member with a multilayer reflector structure; a first electrode including tungsten; a piezoelectric film including aluminum scandium nitride; a second electrode including tungsten; and a passivation layer including silicon nitride. At least one resonator includes at least a portion of the first electrode located within a cavity region defined by a surface of the support member.

Abstract: An RF filter system including a plurality of BAW resonators arranged in a circuit, the circuit including a serial configuration of resonators and a parallel shunt configuration of resonators, the circuit having a circuit response corresponding to the serial configuration and the parallel configuration of the plurality of bulk acoustic wave resonators including a transmission loss from a pass band having a bandwidth from 5.855 GHz to 5.925 GHz. Resonators include a support member with a multilayer reflector structure; a first electrode including tungsten; a piezoelectric film including aluminum scandium nitride; a second electrode including tungsten; and a passivation layer including silicon nitride. At least one resonator includes at least a portion of the first electrode located within a cavity region defined by a surface of the support member.

Abstract: Aspects of this disclosure relate to a surface acoustic wave device. The surface acoustic wave device includes a piezoelectric layer and an interdigital transducer. The interdigital transducer electrode includes a pair of electrodes, each electrode having a bus bar and fingers extending from the bus bar. The interdigital transducer electrode has an interdigital region defined by a portion of the fingers of the electrodes that interdigitate with each other. A dielectric layer is disposed over the interdigital transducer electrode outside the interdigital region and configured to reduce a loss of the surface acoustic wave device.

Abstract: A ladder filter comprises a plurality of series arm bulk acoustic wave resonators electrically connected in series between an input port and an output port of the ladder filter and a plurality of shunt bulk acoustic wave resonators electrically connected in parallel between adjacent ones of the plurality of series arm bulk acoustic wave resonators and ground, at least one of the plurality of shunt bulk acoustic wave resonators including raised frame regions having a first width, at least one of the plurality of series arm bulk acoustic wave resonators having one of raised frame regions having a second width less than the first width or lacking raised frame regions.

Abstract: A micro-resonator includes a first electrode positioned on a piezoelectric plate at a first end of the piezoelectric plate, the first electrode including a first set of fingers and a second electrode positioned on the piezoelectric plate at a second end of the piezoelectric plate. The second electrode including a second set of fingers interdigitated with the first set of fingers with an overlapping distance without touching the first set of fingers, the overlapping distance being less than seven-tenths the length of one of the first set of fingers or the second set of fingers. At least one of the first end or the second end of the piezoelectric plate may define a curved shape.

Abstract: An acoustic wave device comprises a substrate including a piezoelectric material, interdigital transducer (IDT) electrodes disposed on an upper surface of the substrate. The IDT electrodes having gap regions, edge regions, and center regions. A duty factor of the IDT electrodes in the edge regions is greater than the duty factor of the IDT electrodes in the center regions. A first dielectric film is disposed above the IDT electrodes and an upper surface of the substrate. The first dielectric film has a greater thickness in portions of the center regions than in portions proximate the gap regions.

Abstract: A method for generating high order harmonic frequencies includes: providing a piezoelectric resonant film; and inputting a driving signal with a single tone frequency for driving the piezoelectric resonant film to oscillate in a non-linear region so as to generate a plurality of high order harmonic frequencies. Therefore, the quantity of the high order harmonic frequencies can be adjusted by applying an electrical controlling method.

Abstract: A bulk-acoustic wave resonator includes: a first electrode disposed above a substrate; a piezoelectric layer disposed to cover at least a portion of the first electrode; and a second electrode disposed to cover at least a portion of the piezoelectric layer. A plurality of steps are formed in any one or any combination of any two or more of the first electrode, the piezoelectric layer, and the second electrode in an active region in which the first electrode, the piezoelectric layer, and the second electrode are all disposed to overlap one another.

Abstract: There are disclosed acoustic resonators and radio frequency filter devices. A back surface of a single-crystal piezoelectric plate is attached to a surface of a substrate except for portions of the piezoelectric plate forming a plurality of diaphragms, each of which spans a respective cavity in the substrate. A conductor pattern is formed on the front surface, the conductor pattern including interdigital transducers (IDTs) of one or more pairs of sub-resonators, each pair consisting of two sub-resonators. The IDT of each sub-resonator includes interleaved fingers disposed on a respective diaphragm. The piezoelectric plate and the IDTs are configured such that respective radio frequency signals applied to each IDT excite respective shear primary acoustic modes in the respective diaphragms. The two sub-resonators of each pair of sub-resonators are positioned symmetrically about a central axis.

Abstract: Acoustic resonator devices, filters, and methods are disclosed. An acoustic resonator includes a substrate and a lithium niobate (LN) plate having front and back surfaces and a thickness ts. The back surface is attached to a surface of the substrate. A portion of the LN plate forms a diaphragm spanning a cavity in the substrate. An interdigital transducer (IDT) is formed on the front surface of the LN plate with interleaved fingers of the IDT disposed on the diaphragm. The LN plate and the IDT are configured such that a radio frequency signal applied to the IDT excites a shear primary acoustic wave in the diaphragm. Euler angles of the LN plate are [0°, ?, 0°], where 0???60°. A thickness of the interleaved fingers of the IDT is greater than or equal to 0.8 ts and less than or equal to 2.0 ts.

Abstract: A sensor comprising a resonator structure arranged for resonating along a first plane; and at least one sensing electrode arranged on a second plane parallel to said first plane at a predetermined distance of said resonator structure along a direction normal to said first plane.

Abstract: A microelectromechanical resonator includes a support structure, a resonator element suspended to the support structure, and an actuator for exciting the resonator element to a resonance mode. The resonator element includes a plurality of adjacent sub-elements each having a length and a width and a length-to-width aspect ratio of higher than 1 and being adapted to a resonate in a length-extensional, torsional or flexural resonance mode. Further, each of the sub-elements is coupled to at least one other sub-element by one or more connection elements coupled to non-nodal points of the of said resonance modes of the sub-elements for exciting the resonator element into a collective resonance mode.

Abstract: A method of manufacturing a component carrier, wherein the method comprises mounting a known-good component on or spaced with regard to a first known-good component carrier block, thereafter forming an electrically conductive connection structure on and/or in and/or spaced with regard to the first component carrier block, and embedding the component between the first component carrier block and a second known-good component carrier block.

Abstract: Acoustic resonator devices, filters, and methods are disclosed. An acoustic resonator device includes a substrate, a single-crystal lithium niobate plate, an acoustic Bragg reflector sandwiched between a surface of the substrate and a back surface of the lithium niobate plate, wherein the acoustic Bragg reflector includes a plurality of layers alternating between high acoustic impedance layers and low acoustic impedance layers, wherein all of the plurality of layers are dielectric materials, and wherein the high acoustic impedance layers are one of silicon nitride and aluminum nitride and the low acoustic impedance layers are carbon-containing silicon oxide, and an interdigital transducer (IDT) formed on a front surface of the lithium niobate plate. Euler angles of the lithium niobate plate are [0°, ?, 0°], where ? is greater than or equal to 0° and less than or equal to 60°.

Abstract: In some examples, a device is arranged to include a galvanic isolation barrier between first and second voltage domains. The device includes first and second capacitors arranged across the galvanic isolation barrier. The first and second capacitors are configured to communicate differential signals between the first and second domains. The device also includes a common mode suppression circuit arranged in the second voltage domain and configured to suppress a common mode signal communicated by the first and second capacitors. The common mode suppression circuit include a first passive RLC filter circuit coupled between the first capacitor and a low-impedance node. The common mode suppression circuit also includes a second passive RLC filter circuit coupled between the second capacitor and a low-impedance node.

Abstract: A system for heating a fluid and an electromagnetic acoustic transducer EMAT system is provided. Both systems have a drive circuit. The amount of heat and the amplitude (and acceleration) of the vibrations is respectively controllable by controlling an input to a terminal of a switch. The heating system comprises a porous graphite foam conductor which is exposed to an electromagnetic field generated by an oscillating circuit. When exposed, the foam conductor conducts induced electric current which heats the same and a fluid in contact with the conductor. The EMAT system comprises at least one magnet configured to generate a static magnetic field, an oscillating circuit and a working element. The working element, when exposed to the static magnetic field and the electromagnetic field produced by the oscillating circuit, vibrates against a load. The vibrations dry the load.

Abstract: The RF filters used in conventional mobile devices often include resonator structures, which often require free-standing air-gap structure to prevent mechanical vibrations of the resonator from being damped by a bulk material. A method for fabricating a resonator structure comprises depositing a non-conformal thin-film to the resonator structure to seal air gap cavities in the resonator structure.

Abstract: Spin qubits are situated in mechanical resonators that are acoustically coupled with acoustic waveguides. The acoustic waveguides provide frequency dependent phonon propagation selected so that mechanical resonators adjacent to a selected mechanical resonator are acoustically coupled to the selected mechanical resonator in different acoustic frequency ranges. This configure permits directional transfer of quantum states between spins in spin-mechanical resonator and provides a scalable platform for spin-based quantum computing.

Abstract: A high frequency filter includes series arm resonators and parallel arm resonators as acoustic wave resonators and at least one inductor, wherein capacitive components of the acoustic wave resonators constitute an LPF and an HPF as hybrid filters with an inductor or with an inductor and a capacitor, and the at least one inductor includes inductors as mount component inductors.

Abstract: Embodiments of the invention include a mm-wave waveguide connector and methods of forming such devices. In an embodiment the mm-wave waveguide connector may include a plurality of mm-wave launcher portions, and a plurality of ridge based mm-wave filter portions each communicatively coupled to one of the mm-wave launcher portions. In an embodiment, the ridge based mm-wave filter portions each include a plurality of protrusions that define one or more resonant cavities. Additional embodiments may include a multiplexer portion communicatively coupled to the plurality of ridge based mm-wave filter portions and communicative coupled to a mm-wave waveguide bundle. In an embodiment the plurality of protrusions define resonant cavities with openings between 0.5 mm and 2.0 mm, the plurality of protrusions are spaced apart from each other by a spacing between 0.5 mm and 2.0 mm, and wherein the plurality of protrusions have a thickness between 200 ?m and 1,000 ?m.

Abstract: Acoustic filters and methods are disclosed. A single-crystal piezoelectric is attached to a substrate, portions of the piezoelectric plate forming one or more diaphragms spanning respective cavities in the substrate. A conductor pattern is formed on the piezoelectric plate, the conductor pattern including a plurality of interdigital transducers (IDTs) of a plurality of resonators, interleaved fingers of each of the plurality of IDTs disposed on a respective diaphragm of the one or more diaphragms. A first frequency setting dielectric layer having a first thickness is disposed over the fingers of the IDTs of a first subset of the plurality of resonators. A second frequency setting dielectric layer having a second thickness greater than the first thickness is disposed over the fingers of the IDTs of a second subset of the plurality of resonators, wherein the first subset and the second subset are not identical.

Abstract: There is disclosed acoustic resonators and filter devices. An acoustic resonator includes a substrate having a surface and a rotated Z-cut lithium niobate piezoelectric plate having parallel front and back surfaces, the back surface attached to the surface of the substrate except for a portion of the piezoelectric plate forming a diaphragm that spans a cavity in the substrate. An interdigital transducer (IDT) is formed on the front surface of the single-crystal piezoelectric plate such that interleaved fingers of the IDT are disposed on the diaphragm. The IDT is configured to excite a primary acoustic mode in the diaphragm in response to a radio frequency signal applied to the IDT. A thickness of the interleaved fingers of the IDT is greater than or equal to 0.85 times a thickness of the piezoelectric plate and less than or equal to 2.5 times the thickness of the piezoelectric plate.

Abstract: Acoustic resonator devices, filters, and methods are disclosed. An acoustic resonator includes a substrate and a piezoelectric plate having front and back surfaces, the back surface attached to a surface of the substrate except for a portion of the piezoelectric plate forming a diaphragm that spans a cavity in the substrate. An interdigital transducer (IDT) is formed on the front surface of the piezoelectric plate such that interleaved fingers of the IDT are disposed on the diaphragm. The IDT is configured to excite a primary acoustic mode in the diaphragm in response to a radio frequency signal applied to the IDT. At least one finger of the IDT is disposed in a groove in the diaphragm. A depth of the groove is equal to a thickness of the at least one finger.

Abstract: The present disclosure describes micromechanical resonator, a resonator element for the resonator, and a method for trimming the resonator. The resonator comprises a resonator element having a length, a width, and a thickness, where the length and the width define a plane of the resonator element. The resonator element comprises at least two regions (52, 53) in the plane of the resonator element, wherein the at least two regions have different thicknesses.

Abstract: A MEMS sensor for measuring at least one measured variable, especially a density, a flow and/or a viscosity, a flowing fluid, is described, comprising: at least one microfluidic channel having a channel section excitable to execute oscillations; and an exciter system for exciting a desired oscillation mode, causing the channel section to execute oscillations in a predetermined plane of oscillation. The MEMS sensor has improved oscillation characteristics at least in part because the channel section is composed of an anisotropic material, having directionally dependent elasticity and which is spatially oriented such that a modulus of elasticity determinative for a stiffness of the channel section relative to deflections of the channel section perpendicular to the plane of oscillation is greater than a modulus of elasticity determinative for a stiffness of the channel section relative to deflections of the channel section in the plane of oscillation.

Abstract: Filter devices and methods of fabrication are disclosed. A filter device includes a piezoelectric plate attached to a substrate, portions of the piezoelectric plate forming diaphragms spanning respective cavities in the substrate. A conductor pattern formed on a surface of the piezoelectric plate includes a plurality of interdigital transducers (IDTs) of a respective plurality of acoustic resonators including a shunt resonator and a series resonator, interleaved fingers of each of the plurality of IDTs disposed on one of the diaphragms. Radio frequency signals applied to the IDTs excite respective primary shear acoustic modes in the respective diaphragms. A thickness of a first dielectric layer disposed on the front surface between the fingers of the IDT of the shunt resonator is greater than a thickness of a second dielectric layer disposed on the front surface between the fingers of the IDT of the series resonator.