Using Bulk Mode Piezoelectric Vibrator Patents (Class 333/187)
  • Patent number: 10431245
    Abstract: A piezoelectric element easily and surely forms polymer coatings on peripheral end faces of the piezoelectric element without deteriorating a yield of the piezoelectric element. The piezoelectric element is manufactured by a method including steps of cutting a piezoelectric element out from a base piezoelectric material plate so that peripheral end faces are formed to define a peripheral shape of the piezoelectric element, and forming polymer coatings on at least objective areas of the peripheral end faces of the piezoelectric element by vapor deposition polymerization.
    Type: Grant
    Filed: March 16, 2016
    Date of Patent: October 1, 2019
    Assignee: NHK Spring Co., Ltd.
    Inventor: Akira Nojima
  • Patent number: 10404231
    Abstract: An acoustic resonator device includes a bottom electrode disposed on a substrate over an air cavity, a first piezoelectric material layer disposed on the bottom electrode, an electrically-isolated layer of high-acoustic-impedance material disposed on the first piezoelectric material layer, a second piezoelectric material layer disposed on the electrically-isolated layer of high-acoustic impedance material, and a top electrode disposed on the second piezoelectric material layer, where an overlap among the top electrode, the first piezoelectric material layer, the electrically-isolated layer of high-acoustic-impedance material, the second piezoelectric material layer, and the bottom electrode over the air cavity defines a main membrane region.
    Type: Grant
    Filed: October 26, 2016
    Date of Patent: September 3, 2019
    Assignee: Avago Technologies International Sales Pte. Limited
    Inventors: Dariusz Burak, Stefan Bader, Kevin J. Grannen
  • Patent number: 10383211
    Abstract: A front-end circuit includes an insulating substrate, a power amplifier, a receiver circuit device, and a shielding conductor. The power amplifier and the receiver circuit device are mounted on a top surface of the insulating substrate. The shielding conductor covers a part of the insulating substrate at the top surface side. A transmitter circuit region (Retx) where the power amplifier is mounted is arranged closer to a first side surface side than a second side surface. A receiver circuit region (Rerx) where the receiver circuit device is mounted is arranged between the transmitter circuit region (Retx) and the second side surface. The shielding conductor includes a top surface side conductor covering the transmitter circuit region (Retx) and a first side surface side conductor covering the first side surface side of the transmitter circuit region (Retx).
    Type: Grant
    Filed: September 27, 2018
    Date of Patent: August 13, 2019
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventor: Takanori Uejima
  • Patent number: 10367471
    Abstract: A resonator package and a method of manufacturing the same are provided. The method of manufacturing a resonator package involves etching a lower electrode with a hardmask, in which only a portion of a thickness of the lower electrode is etched to shape the lower electrode.
    Type: Grant
    Filed: March 2, 2016
    Date of Patent: July 30, 2019
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Tae Yoon Kim, Yeong Gyu Lee, Moon Chul Lee, Jae Chang Lee, Duck Hwan Kim
  • Patent number: 10361677
    Abstract: A micro-transfer printable transverse bulk acoustic wave filter comprises a piezoelectric filter element having a top side, a bottom side, a left side, and a right side disposed over a sacrificial portion on a source substrate. A top electrode is in contact with the top side and a bottom electrode is in contact with the bottom side. A left acoustic mirror is in contact with the left side and a right acoustic mirror is in contact with the right side. The thickness of the transverse bulk acoustic wave filter is substantially less than its length or width and its length can be greater than its width. The transverse bulk acoustic wave filter can be disposed on, and electrically connected to, a semiconductor substrate comprising an electronic circuit to control the transverse bulk acoustic wave filter and form a composite heterogeneous device that can be micro-transfer printed.
    Type: Grant
    Filed: June 30, 2017
    Date of Patent: July 23, 2019
    Assignee: X-Celeprint Limited
    Inventors: Christopher Bower, Matthew Meitl, Ronald S. Cok, Robert R. Rotzoll
  • Patent number: 10361658
    Abstract: An oscillation module includes an oscillation circuit which includes a first coil and a second coil and a filter circuit which is provided at a stage subsequent to the oscillation circuit and includes a third coil. The first coil, the second coil, and the third coil are a part of an integrated circuit. The third coil is arranged so as to intersect a virtual straight line equidistant from the center of the first coil and the center of the second coil, in a plan view of the integrated circuit.
    Type: Grant
    Filed: October 20, 2016
    Date of Patent: July 23, 2019
    Assignee: Seiko Epson Corporation
    Inventors: Masataka Nomura, Shigeki Sasayama, Akira Nakada, Yoshiki Makiuchi
  • Patent number: 10355666
    Abstract: A variable filter circuit includes: a series arm connected in series between a signal input terminal and a signal output terminal; a parallel arm connected between the series arm and a ground terminal that has a resonator; and a variable reactance portion in the parallel arm, and the resonator of a parallel arm at an initial stage connected to the signal input terminal that has a resonant frequency fr and an anti-resonant frequency fa that satisfy 100×(fn?fr)/(fa?fr)?23.9(%) for communication bands for each of which a stop band is set so as to be close to a high-frequency side of a pass band, among the plurality of communication bands, where a resonant frequency is fr, an anti-resonant frequency is fa, and a cutoff frequency at a high-frequency side of a pass band of each communication band is fn.
    Type: Grant
    Filed: June 8, 2017
    Date of Patent: July 16, 2019
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Manabu Nakahori, Masakazu Tani
  • Patent number: 10305447
    Abstract: An acoustic filter comprises a piezoelectric layer; an acoustic resonator structure monolithically disposed on the piezoelectric layer, the acoustic resonator structure including an arrangement of planar interdigitated resonator fingers; and a lumped capacitive structure monolithically disposed on the piezoelectric layer and being electrically coupled to the acoustic resonator structure, the lumped capacitive structure including an arrangement of planar interdigitated capacitive fingers, each of at least one of the interdigitated capacitive fingers having an edge that is entirely continuous.
    Type: Grant
    Filed: February 27, 2017
    Date of Patent: May 28, 2019
    Assignee: RESONANT INC.
    Inventors: Kurt F. Raihn, Gregory L. Hey-Shipton
  • Patent number: 10263599
    Abstract: A Bulk Acoustic Wave (BAW) filter includes a series branch coupled between an input node and an output node. The series branch has multiple BAW resonators that are coupled in series, wherein a first series resonator is coupled between a first node and a second node in the series branch. A first shunt resonator is coupled between the first node and a fixed voltage node, such as ground, and a second shunt resonator is coupled between the second node and the fixed voltage node. Further, a first inductor is coupled between the first node and the fixed voltage node, and a second inductor is coupled between the second node and the fixed voltage node. The first inductor and the second inductor are magnetically coupled to one another to generate a virtual inductance between the first node and the second node and in parallel with the first series resonator.
    Type: Grant
    Filed: October 19, 2016
    Date of Patent: April 16, 2019
    Assignee: Qorvo US, Inc.
    Inventors: Jeff D. Galipeau, Lawrence A. Carastro, Scott M. Knapp
  • Patent number: 10224897
    Abstract: For a component operating with acoustic waves, it is proposed to provide a compensation layer on the component for compensating for a negative temperature coefficient of the frequency, which includes a material based on a chemical compound made up of at least two elements, which has a negative thermal expansion coefficient.
    Type: Grant
    Filed: July 9, 2015
    Date of Patent: March 5, 2019
    Assignee: SnapTrack, Inc.
    Inventors: Werner Ruile, Philipp Michael Jäger, Matthias Knapp
  • Patent number: 10211044
    Abstract: This method for manufacturing a ferroelectric thin film device includes: a lower electrode film formation step of forming a lower electrode film on a substrate; a ferroelectric thin film formation step of forming a ferroelectric thin film made of a sodium potassium niobate on the lower electrode film; an upper electrode film formation step of forming an upper electrode film on the ferroelectric thin film; and an upper electrode film etching step of shaping the upper electrode film into a desired micro-pattern by performing a reactive ion etching process on the upper electrode film. The upper electrode film etching step is a step of calculating a rate of change of sodium emission intensity in an ion plasma generated by the reactive ion etching process and determining that the etching process is completed when the rate of change falls below a predetermined threshold.
    Type: Grant
    Filed: March 2, 2016
    Date of Patent: February 19, 2019
    Assignee: SUMITOMO CHEMICAL COMPANY, LIMITED
    Inventors: Fumimasa Horikiri, Kenji Shibata, Kazutoshi Watanabe, Kazufumi Suenaga
  • Patent number: 10211804
    Abstract: A method of fabricating a configurable single crystal acoustic resonator (SCAR) device integrated circuit. The method includes providing a bulk substrate structure having first and second recessed regions with a support member disposed in between. A thickness of single crystal piezo material is formed overlying the bulk substrate with an exposed backside region configured with the first recessed region and a contact region configured with the second recessed region. A first electrode with a first terminal is formed overlying an upper portion of the piezo material, while a second electrode with a second terminal is formed overlying a lower portion of the piezo material. An acoustic reflector structure and a dielectric layer are formed overlying the resulting bulk structure. The resulting device includes a plurality of single crystal acoustic resonator devices, numbered from (R1) to (RN), where N is an integer greater than 1.
    Type: Grant
    Filed: May 5, 2016
    Date of Patent: February 19, 2019
    Assignee: AKOUSTIS, INC.
    Inventor: Jeffrey B. Shealy
  • Patent number: 10199430
    Abstract: Monolithic integrated device having an architecture that allows an acoustic device to transduce either surface acoustic waves or bulk acoustic waves, comprising: a substrate layer being the base of the device; an inter-layer dielectric disposed on top of the substrate layer; an electronic circuitry substantially formed in the inter-layer dielectric and supported by the substrate layer, the electronic circuitry comprises a plurality of metal layers; and a piezoelectric layer being sandwiched between a top electrode and a bottom electrode within the inter-layer dielectric. The top electrode is an upper metal layer belonging to the electronic circuitry and the bottom electrode is a lower metal layer belonging to the electronic circuitry. To transduce the bulk acoustic waves, the inter-layer dielectric is formed with a top cavity above the top electrode and a bottom cavity below the bottom electrode.
    Type: Grant
    Filed: April 21, 2017
    Date of Patent: February 5, 2019
    Assignee: SILTERRA MALAYSIA SDN. BHD.
    Inventors: Mohanraj Soundara Pandian, Wee Song Tay, Venkatesh Madhaven, Arjun Kumar Kantimahanti
  • Patent number: 10164601
    Abstract: A temperature-compensated BAW resonator is disclosed. In an embodiment, the BAW includes a substrate and a layer stack disposed thereon, the layer stack including a bottom electrode layer, a top electrode layer, a piezoelectric layer arranged between the bottom and top electrode layers and an acoustic mirror arranged between the bottom electrode layer and the substrate, wherein the acoustic mirror comprises at least two mirror layers, wherein the acoustic mirror comprises high impedance and low impedance layers arranged in an alternating sequence. The layer stack further includes a compensation layer including a material having a positive temperature coefficient of viscoelastic properties, wherein the compensation layer is arranged between the acoustic mirror and the bottom electrode layer, wherein the mirror layers together form a Bragg mirror.
    Type: Grant
    Filed: February 12, 2015
    Date of Patent: December 25, 2018
    Assignee: SnapTrack, Inc.
    Inventor: Stephan Marksteiner
  • Patent number: 10069476
    Abstract: A multiplexer includes: one or more transmit filters that are connected between an antenna terminal and one or more transmit terminals; one or more receive filters that are connected between the antenna terminal and one or more receive terminals; and a circuit that includes a longitudinally coupled acoustic wave filter and is connected in parallel to one or more series resonators of a first filter that is one of the one or more transmit filters and the one or more receive filters and includes the one or more series resonators and one or more parallel resonators each formed of a piezoelectric thin film resonator, wherein the longitudinally coupled acoustic wave filter is formed of IDTs formed on a chip of a second filter that is another one of the one or more transmit filters and the one or more receive filters and formed of a surface acoustic wave resonator.
    Type: Grant
    Filed: May 31, 2016
    Date of Patent: September 4, 2018
    Assignee: TAIYO YUDEN CO., LTD.
    Inventors: Hiroshi Hara, Yasuhisa Okamoto, Naoki Takahashi
  • Patent number: 10069474
    Abstract: A device includes an acoustic resonator embedded within an encapsulating structure that at least partially encapsulates the acoustic resonator. The device includes an inductor electrically connected to the acoustic resonator. At least a portion of the inductor is embedded in the encapsulating structure.
    Type: Grant
    Filed: April 25, 2016
    Date of Patent: September 4, 2018
    Assignee: QUALCOMM Incorporated
    Inventors: Changhan Hobie Yun, Chengjie Zuo, Daeik Daniel Kim, Mario Francisco Velez, Niranjan Sunil Mudakatte, Je-Hsiung Jeffrey Lan, David Francis Berdy, Yunfei Ma, Robert Paul Mikulka, Jonghae Kim
  • Patent number: 9966981
    Abstract: A radio frequency (RF) receiver, which has an RF filter and impedance matching circuit and an RF low noise amplifier (LNA), is disclosed. The RF filter and impedance matching circuit includes a first passive RF acoustic resonator; provides an RF bandpass filter having an RF receive band based on the first passive RF acoustic resonator; and presents an input impedance at an RF input and an output impedance at an RF output, such that a ratio of the output impedance to the input impedance is greater than 40. The RF LNA is coupled to the RF output.
    Type: Grant
    Filed: January 25, 2017
    Date of Patent: May 8, 2018
    Assignee: Qorvo US, Inc.
    Inventors: Dirk Robert Walter Leipold, George Maxim, Baker Scott
  • Patent number: 9708181
    Abstract: A sealed package having a device disposed on a wafer structure and a lid structure boned to the device wafer. The device wafer includes: a substrate; a metal ring disposed on a surface portion of substrate around the device and a bonding material disposed on the metal ring. The metal ring extends laterally beyond at least one of an inner and outer edge of the bonding material. A first layer of the metal ring includes a stress relief buffer layer having a higher ductility than that of the surface portion of the substrate and a width greater than the width of the bonding material. The metal ring extends laterally beyond at least one of the inner and outer edges of the bonding material. The stress relief buffer layer has a coefficient of thermal expansion greater than the coefficient of expansion of the surface portion of the substrate and less than the coefficient of expansion of the bonding material.
    Type: Grant
    Filed: February 19, 2016
    Date of Patent: July 18, 2017
    Assignee: Raytheon Company
    Inventors: Adam M. Kennedy, Buu Q. Diep, Stephen H. Black, Tse E. Wong, Thomas Allan Kocian, Gregory D. Tracy
  • Patent number: 9680439
    Abstract: A method is provided for fabricating a bulk acoustic wave (BAW) resonator device. The method includes forming an etch stop layer over a bottom electrode and a substrate; forming a dielectric layer on the etch stop layer; forming a photomask over the dielectric layer defining an opening over the bottom electrode; etching a portion the dielectric layer through the opening of the photomask to the etch stop layer to create a corresponding opening in the dielectric layer; removing the photomask, leaving un-etched protruding portions of the dielectric layer around the opening in the dielectric layer; and removing the protruding portions of the dielectric layer, a portion of the etch stop layer located over the bottom electrode, and a minimal portion of the bottom electrode to provide a planarized surface including a top surface of the bottom electrode and an adjacent top surface of the dielectric layer deposited over the substrate.
    Type: Grant
    Filed: March 26, 2014
    Date of Patent: June 13, 2017
    Assignee: Avago Technologies General IP (Singapore) Pte. Ltd.
    Inventors: Phil Nikkel, Stefan Bader, Robert Thalhammer
  • Patent number: 9673778
    Abstract: A solid mount bulk acoustic wave resonator, comprises a first electrode; a second electrode; a piezoelectric layer disposed between the first and second electrodes; and an acoustic reflector comprising a plurality of layers and disposed beneath the first electrode, the second electrode and the piezoelectric layer. An overlap of the acoustic reflector, the first electrode, the second electrode and the piezoelectric layer defines an active area of the acoustic resonator, and the piezoelectric layer extends over an edge of the first electrode. The acoustic resonator also comprises a bridge adjacent to a termination of the active area of the acoustic resonator. The bridge overlaps a portion of the first electrode.
    Type: Grant
    Filed: December 27, 2011
    Date of Patent: June 6, 2017
    Assignee: Avago Technologies General IP (Singapore) Pte. Ltd.
    Inventors: Chris Feng, John Choy, Phil Nikkel
  • Patent number: 9634643
    Abstract: Disclosed is a bulk acoustic wave resonator (BAWR). The BAWR includes a bulk acoustic wave resonance unit with a first electrode, a second electrode, and a piezoelectric layer. The piezoelectric layer is disposed between the first electrode and the second electrode. An air edge is formed at a distance from a center of the bulk acoustic wave resonance unit.
    Type: Grant
    Filed: November 30, 2012
    Date of Patent: April 25, 2017
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jea Shik Shin, Duck Hwan Kim, Chul Soo Kim, Sang Uk Son, In Sang Song, Moon Chul Lee
  • Patent number: 9608592
    Abstract: An acoustic resonator structure comprises: a substrate having a cavity, which has a plurality of sides; a first electrode disposed over the cavity; a piezoelectric layer disposed over a portion of the first electrode and extending over at least one of the sides; and a second electrode disposed over the piezoelectric layer, an overlap of the first electrode, the piezoelectric layer and the second electrode forming an active area of the FBAR. The active area of the FBAR is completely suspended over the cavity.
    Type: Grant
    Filed: January 21, 2014
    Date of Patent: March 28, 2017
    Assignee: Avago Technologies General IP (Singapore) Pte. Ltd.
    Inventors: Frank Bi, Martha K. Small, Suresh Sridaran, Richard C. Ruby
  • Patent number: 9583704
    Abstract: Disclosed is a complementary resistor switch (3) comprising two outer contacts, between which two piezo- or ferroelectric layers (11a and 11b) having an inner common contact are situated. At least one region (11?, 11?) of the layers is modified, either the outer contacts are rectifying (S) and the inner contact is non-rectifying (O), or vice versa, the modified regions are formed at the rectifying contacts, the layers have different strain-dependent structural phases with different band gaps and/or different polarization charges, and the electrical conductivity of the layers is different. Also disclosed are a connectable resistor structure having at least one Schottky contact at two adjoining piezo- or ferroelectric layers, a polycrystalline piezo- or ferroelectric layer comprising modified crystallites, and a method and circuits for encrypting and decrypting a bit sequence.
    Type: Grant
    Filed: January 16, 2014
    Date of Patent: February 28, 2017
    Assignee: HELMHOLTZ-ZENTRUM DRESDEN-ROSSENDORF E.V.
    Inventors: Tiangui You, Heidemarie Schmidt, Nan Du, Danilo Buerger, Ilona Skorupa
  • Patent number: 9577603
    Abstract: A solidly mounted resonator (SMR) includes an acoustic resonator on a substrate, the acoustic resonator having multiple acoustic impedance layers having different acoustic impedances, respectively. The SMR further includes a bottom electrode on a top acoustic impedance layer of the plurality of acoustic impedance layers, a piezoelectric layer on the bottom electrode, a top electrode on the piezoelectric layer, and multiple lateral features on a surface of the top electrode. The lateral features include multiple stepped structures.
    Type: Grant
    Filed: August 14, 2014
    Date of Patent: February 21, 2017
    Assignee: Avago Technologies General IP (Singapore) Pte. Ltd.
    Inventors: Dariusz Burak, John Choy
  • Patent number: 9525399
    Abstract: In a representative embodiment, a bulk acoustic wave (BAW) resonator, comprises: a cavity disposed in a substrate; a first electrode disposed over the cavity; a planarization layer disposed adjacent to the first electrode; a piezoelectric layer disposed over the first electrode; and a second electrode disposed over the piezoelectric layer.
    Type: Grant
    Filed: October 31, 2011
    Date of Patent: December 20, 2016
    Assignee: Avago Technologies General IP (Singapore) Pte. Ltd.
    Inventors: Dariusz Burak, Phil Nikkel, John Choy, Alexandre Shirakawa, Stefan Bader
  • Patent number: 9525397
    Abstract: A solidly mounted resonator (SMR) device includes an acoustic reflector having stacked acoustic reflector layer pairs, each of which includes a low acoustic impedance layer formed of low acoustic impedance material stacked on a high acoustic impedance layer formed of high acoustic impedance material. The SMR device further includes a bottom electrode disposed on the acoustic reflector, a piezoelectric layer disposed on the bottom electrode, and a top electrode disposed on the piezoelectric layer. A collar is formed outside a main active region defined by an overlap between the top electrode, the piezoelectric layer and the bottom electrode, and at least one frame is disposed within the main active region. The collar has an inner edge substantially aligned with a boundary of or overlapping the main active region, and the at least one frame has an outer edge substantially aligned with the boundary of the main active region.
    Type: Grant
    Filed: February 14, 2014
    Date of Patent: December 20, 2016
    Assignee: Avago Technologies General IP (Singapore) Pte. Ltd.
    Inventor: Dariusz Burak
  • Patent number: 9496847
    Abstract: A piezoelectric and ferroelectric bulk wave transducer operating at a predetermined frequency includes a block of substrate, having a first thickness and in a first material, and a piezoelectric and ferroelectric transduction plate, having a length, a width and a second thickness, and in a second piezoelectric material, first and second metal electrodes covering the plate in the direction of the length thereof. The plate has first and second ferroelectric domains with alternating polarizations, distributed along the length of the plate according to a periodic pattern of pitch. The plate is attached perpendicularly to the block so that the width of the plate and the first thickness of the block are the same direction. The first and second material, the first thickness of the block, the length, the width, the second thickness, the pitch of the plate are configured for generating and trapping bulk waves at the operating frequency of the transducer, guided between both electrodes.
    Type: Grant
    Filed: October 5, 2012
    Date of Patent: November 15, 2016
    Assignees: CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE (C.N.R.S), UNIVERSITE DE FRANCHE-COMTE
    Inventors: Sylvain Ballandras, Gwenn Ulliac, Blandine Edouard-Guichardaz, Florent Bassignot, Emilie Courjon
  • Patent number: 9484882
    Abstract: An acoustic resonator structure comprises a substrate having an air cavity, an acoustic stack disposed over the substrate and comprising a piezoelectric material disposed between a first electrode and a second electrode, and an acoustic reflector disposed over the substrate and comprising a single pair of acoustic impedance layers configured to reflect acoustic waves produced by vibration of the acoustic stack, wherein at least one of the acoustic impedance layers comprises a temperature compensating material.
    Type: Grant
    Filed: February 14, 2013
    Date of Patent: November 1, 2016
    Assignee: Avago Technologies General IP (Singapore) Pte. Ltd.
    Inventors: Dariusz Burak, John Choy, Kevin J. Grannen
  • Patent number: 9437183
    Abstract: An embedded acoustic metamaterial lenses allows for ultrasonic beam-forming and high resolution identification of acoustic sources for structural health monitoring. The lenses design provides an alternative to conventional phased-array technology enabling the formation of steerable and collimated (or focused) ultrasonic beams by exploiting a single transducer. The ultrasonic beam can be steered by simply tuning the frequency of the excitation. Also, the embedded lens can be designed to achieve sub-wavelength resolution to clustered acoustic sources which is a typical scenario encountered in incipient structural damage.
    Type: Grant
    Filed: December 19, 2014
    Date of Patent: September 6, 2016
    Assignee: University of Notre Dame du Lac
    Inventors: Fabio Semperlotti, Hongfei Zhu
  • Patent number: 9401691
    Abstract: A bulk acoustic wave (BAW) resonator device includes a substrate defining a cavity, a bottom electrode formed over the substrate and at least a portion of the cavity, a piezoelectric layer formed on the bottom electrode, and a top electrode formed on the piezoelectric layer. An air-wing and an air-bridge are formed between the piezoelectric layer and the top electrode, the air-wing having an inner edge that defines an outer boundary of an active region of the BAW resonator device. The BAW resonator device further includes a temperature compensation feature having positive temperature coefficient for offsetting at least a portion of a negative temperature coefficient of the piezoelectric layer. The temperature compensation feature extends outside the active region by a predetermined length.
    Type: Grant
    Filed: April 30, 2014
    Date of Patent: July 26, 2016
    Assignee: Avago Technologies General IP (Singapore) Pte. Ltd.
    Inventors: Qiang Zou, Chris Feng, Phil Nikkel, John Choy, Alexandre Augusto Shirakawa, Tina L. Lamers, Sook Ching Chang, Dariusz Burak
  • Patent number: 9401692
    Abstract: A bulk acoustic wave (BAW) resonator structure comprises a first electrode disposed over a substrate, a first piezoelectric layer disposed over the first electrode, a second electrode disposed over the first piezoelectric layer, and a collar structure disposed around a perimeter of an active region defined by an overlap between the first electrode, the second electrode, and the piezoelectric layer.
    Type: Grant
    Filed: October 29, 2012
    Date of Patent: July 26, 2016
    Assignee: Avago Technologies General IP (Singapore) Pte. Ltd.
    Inventors: Dariusz Burak, Alexandre Shirakawa, John Choy, Phil Nikkel
  • Patent number: 9385684
    Abstract: A bulk acoustic wave (BAW) resonator structure comprises a first electrode disposed over a substrate, a piezoelectric layer disposed over the first electrode, a second electrode disposed over the first piezoelectric layer, and a guard ring structure formed around a perimeter of an active region corresponding to an overlap of the first electrode, the first piezoelectric layer, and the second electrode.
    Type: Grant
    Filed: October 23, 2012
    Date of Patent: July 5, 2016
    Assignee: Avago Technologies General IP (Singapore) Pte. Ltd.
    Inventors: Phil Nikkel, Chris Feng, Dariusz Burak, John Choy
  • Patent number: 9362887
    Abstract: A configurable single crystal acoustic resonator (SCAR) device integrated circuit. The circuit comprises a plurality of SCAR devices numbered from 1 through N, where N is an integer of 2 and greater. Each of the SCAR device has a thickness of single crystal piezo material formed overlying a surface region of a substrate member. The single crystal piezo material is characterized by a dislocation density of less than 1012 defects/cm2.
    Type: Grant
    Filed: July 10, 2015
    Date of Patent: June 7, 2016
    Assignee: AKOUSTIS, INC.
    Inventor: Jeffrey B. Shealy
  • Patent number: 9337801
    Abstract: A vibration element includes a piezoelectric substrate including a vibrating section and a thick section having a thickness larger than that of the vibrating section. The thick section includes a first thick section provided along a first outer edge of the vibrating section, a second thick section provided along a second outer edge thereof, and a third thick section provided along a third outer edge thereof. When a maximum size of the second thick section in the vibration direction is Lmax and a minimum size thereof is Lmin, an average size expressed by (Lmax+Lmin)/2 is 100 ?m or smaller.
    Type: Grant
    Filed: March 27, 2014
    Date of Patent: May 10, 2016
    Assignee: Seiko Epson Corporation
    Inventors: Masayuki Kikushima, Masako Tanaka, Naohisa Obata, Yukihiro Unno
  • Patent number: 9331264
    Abstract: A microelectromechanical resonator includes a resonator body having a semiconductor region therein that may be degenerately doped with boron. This high level of doping facilitates the formation of a eutectic alloy within the resonator body in response to resistive heating. The formation of a lattice-strained eutectic alloy within the resonator body supports reductions in the temperature coefficient of frequency (TCF) of the resonator over a relatively large temperature range.
    Type: Grant
    Filed: December 12, 2012
    Date of Patent: May 3, 2016
    Assignee: Georgia Tech Research Corporation
    Inventors: Farrokh Ayazi, Ashwin Samarao
  • Patent number: 9319020
    Abstract: A semiconductor resonator has a substrate with a thickness extending between a first end and a second end and a pn-junction along the thickness of the substrate forming a free charge carrier depletion region. In another embodiment, a semiconductor resonator has a substrate with a crystal lattice doped at degenerate levels such that the flow of free charge carriers can be minimized. A method of compensating a temperature coefficient of a semiconductor resonator by creating a pn-junction based free charge carrier depletion region within a thickness of a substrate of the resonator is also disclosed.
    Type: Grant
    Filed: October 19, 2011
    Date of Patent: April 19, 2016
    Assignee: Georgia Tech Research Corporation
    Inventors: Farrokh Ayazi, Ashwin Samarao
  • Patent number: 9299914
    Abstract: A technique capable of maintaining the filter characteristics of a transmitting filter and a receiving filter by reducing the influences of heat from the power amplifier given to the transmitting filter and the receiving filter as small as possible in the case where the transmitting filter and the receiving filter are formed on the same semiconductor substrate together with the power amplifier in a mobile communication equipment typified by a mobile phone is provided. A high heat conductivity film HCF is provided on a passivation film PAS over the entire area of a semiconductor substrate 1S including an area AR1 on which an LDMOSFET is formed and an area AR2 on which a thin-film piezoelectric bulk wave resonator BAW is formed. The heat mainly generated in the LDMOSFET is efficiently dissipated in all directions by the high heat conductivity film HCF formed on the surface of the semiconductor substrate 1S.
    Type: Grant
    Filed: March 8, 2012
    Date of Patent: March 29, 2016
    Assignee: RENESAS ELECTRONICS CORPORATION
    Inventors: Kengo Asai, Atsushi Isobe
  • Patent number: 9300272
    Abstract: Tunable filter structures, methods of manufacture and design structures are disclosed. The method of forming a filter structure includes forming a piezoelectric resonance filter over a cavity structure. The forming of the piezoelectric resonance filter includes: forming an upper electrode on one side of a piezoelectric material; and forming a lower electrode on an opposing side of the piezoelectric material. The method further includes forming a micro-electro-mechanical structure (MEMS) cantilever beam at a location in which, upon actuation, makes contact with the piezoelectric resonance filter.
    Type: Grant
    Filed: April 30, 2015
    Date of Patent: March 29, 2016
    Assignee: GLOBALFOUNDRIES INC.
    Inventors: James W. Adkisson, Panglijen Candra, Thomas J. Dunbar, Mark D. Jaffe, Robert K. Leidy, Anthony K. Stamper
  • Patent number: 9252733
    Abstract: Switchable and/or tunable filters, methods of manufacture and design structures are disclosed herein. The method of forming the filters includes forming at least one piezoelectric filter structure comprising a plurality of electrodes formed on a piezoelectric substrate. The method further includes forming a micro-electro-mechanical structure (MEMS) comprising a MEMS beam formed above the piezoelectric substrate and at a location in which, upon actuation, the MEMS beam shorts the piezoelectric filter structure by contacting at least one of the plurality of electrodes.
    Type: Grant
    Filed: October 24, 2014
    Date of Patent: February 2, 2016
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: James W. Adkisson, Panglijen Candra, Thomas J. Dunbar, Jeffrey P. Gambino, Mark D. Jaffe, Anthony K. Stamper, Randy L. Wolf
  • Patent number: 9246473
    Abstract: An acoustic resonator includes a bottom electrode disposed over a substrate, a piezoelectric layer disposed over the bottom electrode, a top electrode disposed over the piezoelectric layer, and a cavity disposed beneath the bottom electrode. An overlap of the bottom electrode, the piezoelectric layer and the top electrode defines a main membrane region of the acoustic resonator structure. The acoustic resonator further includes an acoustic reflector disposed over the substrate adjacent to the cavity, the acoustic reflector including a layer of low acoustic impedance material stacked on a layer of high acoustic impedance material.
    Type: Grant
    Filed: July 31, 2013
    Date of Patent: January 26, 2016
    Assignee: Avago Technologies General IP (Singapore) Pte. Ltd.
    Inventors: Dariusz Burak, John Choy, Phil Nikkel
  • Patent number: 9219517
    Abstract: Embodiments of apparatuses, systems and methods relating to temperature compensated bulk acoustic wave devices. In some embodiments, temperature compensated bulk acoustic wave devices are described with an over-moded reflector layer.
    Type: Grant
    Filed: October 2, 2013
    Date of Patent: December 22, 2015
    Assignee: TriQuint Semiconductor, Inc.
    Inventors: Robert Aigner, Alireza Tajic
  • Patent number: 9166552
    Abstract: A filter includes one or a plurality of parallel resonators coupled in parallel and one or a plurality of a film bulk acoustic resonators coupled in series, the film bulk acoustic resonator having a substrate, a lower electrode, a piezoelectric membrane, and an upper electrode, wherein: at least one of the lower electrode and the upper electrode has a thick membrane region having a thickness larger than that of a center portion of a resonance region at an edge of the resonance region, the resonance region being a region where the lower electrode and the upper electrode face with each other through the piezoelectric membrane; and a width of the thick membrane region is smaller than a wavelength of an acoustic wave propagating in a direction crossing a thickness direction of the piezoelectric membrane.
    Type: Grant
    Filed: May 22, 2012
    Date of Patent: October 20, 2015
    Assignee: TAIYO YUDEN CO., LTD.
    Inventors: Motoaki Hara, Jun Tsutsumi
  • Patent number: 9166557
    Abstract: A piezoelectric thin film resonator includes: a substrate; a piezoelectric film located on the substrate; a lower electrode and an upper electrode located to sandwich the piezoelectric film; a load film formed from patterns in a resonance region in which the lower electrode and the upper electrode face each other across the piezoelectric film, wherein the patterns are formed so as to surround a center of the resonance region and intersect with a pathway extending from the center to an outer periphery of the resonance region.
    Type: Grant
    Filed: December 20, 2013
    Date of Patent: October 20, 2015
    Assignee: TAIYO YUDEN CO., LTD.
    Inventors: Kenya Hashimoto, Jiansong Liu, Masanori Ueda, Shinji Taniguchi, Tokihiro Nishihara
  • Patent number: 9166555
    Abstract: A phase shifter using a Bulk Acoustic Wave Resonators (BAWR) is provided. The phase shifter using a BAWR may use a property of a phase shift with respect to a frequency of the BAWR, and also use at least one capacitor, at least one inductor, and the like.
    Type: Grant
    Filed: March 18, 2013
    Date of Patent: October 20, 2015
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jea Shik Shin, Dal Ahn, Duck Hwan Kim, In Sang Song, Chul Soo Kim, Yun Kwon Park, Hyung Rak Kim
  • Patent number: 9143113
    Abstract: A resonator element includes a piezoelectric substrate including a vibrating section and a thick section having a thickness larger than that of the vibrating section. The thick section includes a first thick section provided along a first outer edge of the vibrating section, a second thick section provided along a second outer edge, and a third thick section provided along a third outer edge. A first inclined outer edge section that is inclined with respect to both of an X axis direction and a Z? axis direction is provided in a corner section of the piezoelectric substrate where the second thick section and the third thick section are connected to each other.
    Type: Grant
    Filed: March 28, 2014
    Date of Patent: September 22, 2015
    Assignee: Seiko Epson Corporation
    Inventors: Masako Tanaka, Naohisa Obata, Masayuki Kikushima
  • Patent number: 9099983
    Abstract: A bulk acoustic wave (BAW) resonator device includes an acoustic reflector formed over a substrate and a resonator stack formed over the acoustic reflector. The acoustic reflector includes multiple acoustic impedance layers. The resonator stack includes a first electrode formed over the acoustic reflector, a piezoelectric layer formed over the first electrode, and a second electrode formed over the piezoelectric layer. A bridge is formed within one of the acoustic reflector and the resonator stack.
    Type: Grant
    Filed: October 18, 2012
    Date of Patent: August 4, 2015
    Assignee: Avago Technologies General IP (Singapore) Pte. Ltd.
    Inventors: Dariusz Burak, John Choy, Phil Nikkel
  • Patent number: 9083308
    Abstract: System and method for a microelectromechanical system (MEMS) is disclosed. A preferred embodiment comprises a first anchor region, a vibrating MEMS structure fixed to the first anchor region, a first electrode adjacent the vibrating MEMS structure, a second electrode adjacent the vibrating MEMS structure wherein the vibrating MEMS structure is arranged between the first and the second electrode.
    Type: Grant
    Filed: January 12, 2012
    Date of Patent: July 14, 2015
    Assignee: Infineon Technologies AG
    Inventors: Florian Schoen, Mohsin Nawaz, Mihail Sararoiu
  • Patent number: 9070863
    Abstract: A resonator element includes a piezoelectric substrate that includes a vibration portion, and a thick portion which is integrally formed with an outer edge excluding a partial outer edge in an outer edge of the vibration portion and which is thicker than the vibration portion, and a pair of excitation electrodes that are respectively provided on a first main surface and a second main surface of a vibration region which are in front and rear relationships. In addition, the piezoelectric substrate includes first and second beam portions that are provided along a fourth side of the vibration portion.
    Type: Grant
    Filed: February 27, 2014
    Date of Patent: June 30, 2015
    Assignee: SEIKO EPSON CORPORATION
    Inventors: Masayuki Kikushima, Masako Tanaka, Naohisa Obata, Yukihiro Unno
  • Patent number: 9071224
    Abstract: A filter includes: a plurality of piezoelectric thin film resonators, each having a multilayered film including a lower electrode located on a substrate, a piezoelectric film located on the lower electrode, and an upper electrode located on the piezoelectric film so as to face the lower electrode, wherein at least two piezoelectric thin film resonators have thick film portions, in each of which the multilayered film is thicker in at least a part of an outer peripheral portion than in an inner portion of a resonance region in which the lower electrode and the upper electrode face each other across the piezoelectric film, and lengths of the thick film portions from edges of the resonance regions are different from each other in the at least two piezoelectric thin film resonators.
    Type: Grant
    Filed: November 1, 2012
    Date of Patent: June 30, 2015
    Assignee: TAIYO YUDEN CO., LTD.
    Inventors: Tokihiro Nishihara, Shinji Taniguchi, Toshio Nishizawa
  • Patent number: 9056082
    Abstract: Provided is a Fingerprint sensor using Acoustic Impediography. The sensor includes an Application Specific Integrated Circuit (ASIC or IC) and an array of mechanical resonator used as sensing elements. The array of sensing elements contains multiple sensing elements arranged in rows and columns.
    Type: Grant
    Filed: March 23, 2010
    Date of Patent: June 16, 2015
    Assignee: SONAVATION, INC.
    Inventors: Christian Liautaud, Rainer M. Schmitt