Abstract: A fluid sensor includes a tuning fork mechanical resonator including a base and a tine projecting from the base along a longitudinal direction of the tine, and a pair of electrodes disposed on the tine. The base and the tine are formed from a piezoelectric material including lithium tantalate. The electrodes are exposed to a fluid.

Abstract: In a filter device, a transversal elastic wave filter, which defines a delay element, is connected in parallel with a band pass filter. The transversal elastic wave filter has the same amplitude characteristic as and the opposite phase to the band pass filter at a desired frequency inside an attenuation range of the band pass filter. When a wavelength determined by an electrode finger period of IDTs and is denoted by ?, the distance between the first IDT and the second IDT of the elastic wave filter is about 12? or less.

Abstract: An acoustic wave element 1 according to the present disclosure includes a piezoelectric substrate 2 and an IDT electrode 3 on the piezoelectric substrate 2. The IDT electrode 3 includes a multilayer structure of a first layer 35 comprised of Al containing 10% or less of a sub-component and a second layer 37 comprised of a CuAl2 alloy. The second layer 37 enables the acoustic wave element 1 to have excellent electric power resistance.

Abstract: A front-end module may include an acoustic wave filter with a first and second interdigital transducer electrode, and a low noise amplifier (LNA) that converts a differential input to a single-ended output with respect to ground. The first interdigital transducer electrode may be single-ended with a first input bus bar configured to receive an input signal and a second input bus bar connected to ground. The second interdigital transducer electrode may be differential with a first output bus bar connected to a first output terminal and a second output bus bar connected to a second output terminal. The LNA may have a differential input connected to the acoustic wave filter, a first input transistor that receives a first signal from the first output terminal of the acoustic wave filter, and a second input transistor that receives a second signal from the second output terminal of the acoustic wave filter.

Abstract: A front-end module may include an acoustic wave filter with a first and second interdigital transducer electrode. The first interdigital transducer electrode may be single-ended with a first input bus bar that receives an input signal and a second input bus bar connected to ground. The second interdigital transducer electrode may be differential with a first output bus bar connected to a first output terminal and a second output bus bar connected to a second output terminal. The front-end module may include a low noise amplifier (LNA) that outputs a differential signal via a differential output and has a differential input connected to the acoustic wave filter. The LNA may include a first input transistor that receives a first signal from the first output terminal of the acoustic wave filter and a second input transistor that receives a second signal from the second output terminal of the acoustic wave filter.

Abstract: A resonator includes a piezoelectric layer comprising a piezoelectric material, the piezoelectric layer having a first surface and a second surface; an inner electrode disposed on the first surface of the piezoelectric layer, the inner electrode connected to a circuit; and an outer electrode surrounding the inner electrode on the first surface of the piezoelectric layer, the outer electrode left floating or connected to ground. The inner electrode and the outer electrode are separated by at least one gap smaller than an acoustic wavelength. One single piece electrode or multiple piece electrodes may be disposed on the second surface of the piezoelectric layer. The outer electrodes are configured for optimal modal confinement of an acoustic resonance while the inner electrodes are configured to produce a higher motional resistance than the interconnect resistance for maintaining high Q.

Abstract: A system may include a laser source, and an AOM coupled to the laser source. The AOM may include an acousto-optic medium, and transducer electrodes carried by the acousto-optic medium. The system may also include an interface board having a dielectric layer, and vertically extending signal vias within the dielectric layer. Each vertically extending signal via may have a lower end in contact with a respective transducer electrode. The interface board may have laterally extending signal traces carried by the dielectric layer. Each laterally extending signal trace may be in contact with an upper end of a respective vertically extending signal via.

Abstract: An antenna radiates signals in Band41 whose center frequency is ?1 and Band42 whose center frequency is ?2. A medium substrate is used as a carrier of a top radiating element, a phase inversion unit, and a bottom radiating element; an end of the top radiating element is connected to an end of the phase inversion unit; the other end of the phase inversion unit is connected to an end of the bottom radiating element, a length of the phase inversion unit is 3?2/2, and the length of the phase inversion unit is greater than ?1/2; and the phase inversion unit includes at least two current phase inversion points, a part between the at least two current phase inversion points does not produce radiation, and the top radiating element and the bottom radiating element horizontally radiate the signal in the Band41 and the signal in the Band42 omnidirectionally.

Abstract: Reduced-size guided-surface acoustic wave (SAW) resonators are disclosed. Guided-SAW resonators can achieve high acoustic coupling and acoustic quality Q, but may have a larger surface area compared with a traditional temperature compensated (TC)-SAW resonator. In an exemplary aspect, a guided-SAW device is fabricated with a metal-insulator-metal (MIM) capacitor to produce a guided-SAW which has the same high Q with a surface area which is the same or less than traditional TC-SAW resonators.

Abstract: Examples of the present invention include unreleased coupled multi-cavity resonators and transmission filters. In some examples, the resonators include resonant cavities coupled by acoustic couplers (ABGCs) and acoustic reflectors (ABRs). These acoustic components enable improved confinement of acoustic modes within the resonator to increase the quality factor (Q) and lower the motional resistance (Rx). A coupled resonator with 5 cavities coupled by 4 ABGCs can achieve a Q of 1095 while a single-cavity resonator of the same device size has a Q of 760. In some examples, the devices can be configured to work as electronic transmission filters in at least two types of filter configurations. In the transmission line filter configuration, the device can include a filter structure in an arrangement (LH)N H (LH)N, defined as a Fabry-Perot Resonator (FPR). In the multi-pole filter configuration, the device can include a filter structure in an arrangement similar to the multi-cavity resonator design.

Abstract: A duplexer includes a transmission filter with a ladder circuit configuration and a reception filter including a ladder filter portion connected to an antenna terminal and a longitudinally coupled resonator-type surface acoustic wave filter. In the transmission filter, a coupling capacitor is connected between an end portion of an inductor nearer to parallel arm resonators and a wiring line connecting the series arm resonators of the ladder filter portion to each other in the reception filter.

Abstract: A duplexer includes a transmission filter with a ladder circuit configuration and a reception filter. The reception filter includes a series trap element connected to an antenna terminal and a longitudinally coupled resonator-type surface acoustic wave filter. In the transmission filter, a coupling capacitance is connected between an end portion at parallel arm resonators side of an inductance and a line connecting the series trap element to the longitudinally coupled resonator-type surface acoustic wave filter in the reception filter.

Abstract: A piezoelectric component comprises a parallelepipedal basic body made of piezoelectric material which has an input region and an output region at opposite longitudinal ends of the basic body. Furthermore, the piezoelectric component comprises first and second primary electrodes which are arranged inside the input region and first and second secondary electrodes which are arranged inside the output region. The primary electrodes are at a greater interval from longitudinal lateral faces of the basic body in a subregion which faces the output region than in the subregion which is remote from the output region. Likewise, the secondary electrodes are at a greater interval from the longitudinal lateral faces of the basic body in a subregion which faces the input region than in a subregion which is remote from the input region.

Abstract: The invention relates to a micro-acoustic filter having a first and a second converter, in which the electromagnetic and capacitive cross-talk between the first and second converters is compensated for by providing additional coupling capacitors and additional current loops. Additional coupling capacitors and current loops are arranged in such a manner that they can counteract the sign of the natural coupling specified by the design and thus completely compensate for said coupling.

Abstract: Filter devices and duplexer devices are disclosed. A filter device includes two or more surface acoustic wave resonators, including at least a first shunt resonator, formed on a surface of a substrate. A ground conductor formed on the surface of the substrate connects the first shunt resonator to a ground pad. At least a portion of an edge of the ground conductor is shaped as a plurality of serrations.

Abstract: An integrated circuit chip can include an interference mitigator. The interference mitigator can be to modify encoding to generate a cancellation pattern for optimum cancellation of radio frequency interference (RFI) at the effective mid-point of the data bus. The interference mitigator can also be to transmit the generated cancellation pattern across the data bus to cancel the radio frequency interference.

Abstract: An acoustic wave filter having reduced non-linearities as well as a production method are disclosed. A filter comprises a first electroacoustic transducer having a first metallization ratio and a second electroacoustic transducer having a second metallization ratio. The metallization ratios range from 0.2 to 0.8, and the metallization ratio of the first transducer is no more than 0.8 times the metallization ratio of the second transducer.

Abstract: A surface acoustic wave (SAW) resonator and a SAW oscillator and an electronic apparatus including the resonator are to be provided. A SAW resonator includes: an IDT exciting a SAW using a quartz crystal substrate of Euler angles (?1.5°???1.5°, 117°???142°, 42.79°?|?|?49.57°); one pair of reflection units arranged so as allow the IDT to be disposed therebetween; and grooves acquired by depressing the quartz crystal substrate located between electrode fingers. When a wavelength of the SAW is ?, and a depth of the grooves is G, “0.01??G” is satisfied.

Abstract: A filter includes two or more surface acoustic wave resonators formed on a surface of a substrate and at least one ground conductor formed on the surface of the substrate. At least a portion of an edge of the ground conductor is formed as a plurality of serrations.

Abstract: A surface acoustic wave (SAW) array sensor having an input interdigital transducer (IDT); first and second output IDTs that are disposed at both sides of the input IDT, respectively; a first delay line between the input IDT and the first output IDT; and a second delay line between the input IDT and the second output IDT, wherein the first and second delay lines have different lengths; and related devices.

Abstract: An acoustic wave device includes: a substrate; a dielectric film formed on the substrate; opposing comb-shaped electrodes located between the substrate and the dielectric film, each of the opposing comb-shaped electrodes including an electrode finger, wherein at least one of the substrate and the dielectric film is a piezoelectric substance, an upper surface of the dielectric film, which is located above a gap between a tip of an electrode finger of one of the opposing comb-shaped electrodes and the other of the opposing comb-shaped electrodes, is inclined against an upper surface of the substrate in an extension direction of the electrode finger, and an inclination angle of the upper surface of the dielectric film against the upper surface of the substrate is equal to or larger than 30° and equal to or smaller than 50°.

Abstract: An elastic wave filter includes an electrode finger group in an input side electrode and an electrode finger group in output side electrode each disposed in a taper shape such that elastic waves with mutually different wavelengths propagate on a piezoelectric substrate across from a track Tr1 at a low frequency side of a passband to a track Tr2 at a high frequency side of the passband. Assuming that a period length P is a wavelength of the elastic wave propagating on the piezoelectric substrate and constituted of a width dimension of the finger and a separation dimension between the adjacent electrode fingers, at least one of the input side IDT electrode and the output side IDT electrode includes a specific configuration.

Abstract: A method for producing an electric component including a dielectric layer on a substrate, includes the method steps of applying a metallic layer to the substrate and oxidizing the metallic layer to form a dielectric layer, wherein at least one partial region of the metallic layer is fully oxidized through the entire thickness of the layer.

Abstract: Disclosed herein is a surface acoustic wave (SAW) filter and method of making the same. The SAW filter includes a piezoelectric substrate; a planar barrier layer disposed above the piezoelectric substrate, and at least one conductor buried in the piezoelectric substrate and the planar barrier layer.

Abstract: A SAW device 11 has an IDT which is provided on the principal surface of a quartz crystal substrate 12 having Euler angles (?1.5°???1.5°, 117°???142°, 42.79°?|?|?49.57°) and excites a SAW in a stopband upper end mode, and a pair of reflectors which are arranged on both sides of the IDT. Inter-electrode-finger grooves are recessed between the electrode fingers of the IDT, and inter-conductor-strip grooves are recessed between the conductor strips of the reflectors. The wavelength ? of the SAW and the depth G of the inter-electrode-finger grooves satisfy 0.01??G. An IDT line occupancy ? and the depth G of the inter-electrode-finger grooves satisfy a predetermined relational expression. The IDT line occupancy ? and a reflector line occupancy ?r satisfy the relationship ?<?r. Therefore, an excellent frequency-temperature characteristic and a high Q value in an operation temperature range are realized simultaneously.

Abstract: A surface acoustic wave resonator has a quartz crystal substrate having Euler angles of (?=0°, 110°???150°, 88°???92°) and an IDT having a plurality of electrode fingers disposed on the quartz crystal substrate, and using a surface acoustic wave as an excitation wave, a plurality of grooves arranged in a propagation direction of the surface acoustic wave to form stripes is disposed on the quartz crystal substrate, and the electrode fingers are disposed one of between the grooves and inside the grooves.

Abstract: A SAW device 11 has an IDT which is provided on the principal surface of a quartz crystal substrate 12 having Euler angles (?1.5°???1.5°, 117°???142°, 42.79°?|?|?49.57°) and excites a SAW in a stopband upper end mode, and a pair of reflectors which are arranged on both sides of the IDT. Inter-electrode-finger grooves are recessed between the electrode fingers of the IDT, and inter-conductor-strip grooves are recessed between the conductor strips of the reflectors. The wavelength ? of the SAW and the depth G of the inter-electrode-finger grooves satisfy 0.01??G. An IDT line occupancy ? and the depth G of the inter-electrode-finger grooves satisfy a predetermined relational expression. The IDT line occupancy ? and a reflector line occupancy ?r satisfy the relationship ?<?r. Therefore, an excellent frequency-temperature characteristic and a high Q value in an operation temperature range are realized simultaneously.

Abstract: The invention relates to false echo storage in the area of level measurement. The decision as to whether or not to initialize and/or update the false echo memory is made using at least one value for the sensor-inherent noise, container noise and/or EMC noise for this purpose. This may make it possible to avoid identifying a false echo as the level echo.

Abstract: A method of collective fabrication of remotely interrogatable sensors, wherein the method may include fabricating fabricating a first series of first resonators exhibiting a first resonant frequency at ambient temperature and a first static capacitance and fabricating a second series of second resonators exhibiting a second resonant frequency at ambient temperature and a second static capacitance. The method may also include performing a series of electrical measurements of the set of the first series of first resonators and of the set of the second series of second resonators, so as to determine first pairs and second pairs of resonant frequency and of capacitance of each of the first and second resonators and performing a series of matching of a first resonator and of a second resonator.

Abstract: The invention relates to a process for the collective fabrication of a remotely interrogable sensor having at least one first resonator and one second resonator. Each resonator exhibits respectively a first and a second operating frequency. A first series of first resonators are fabricated. The first resonators each have a first operating frequency belonging to a first set of frequencies centered on a first central frequency. A second series of second resonators are fabricated. The second resonators each having a second operating frequency belonging to a second set of frequencies centered on a second central frequency. A series of pairings of a first resonator and of a second resonator are conducted so as to form pairs of resonators exhibiting a difference of operating frequencies which is equal to the difference of the first and second central frequencies.

Abstract: There is provided a tapered elastic wave filter higher in impedance than a conventional filter where one input-side IDT electrode and one output-side IDT electrode are disposed. Filter parts which are the same in the structure of an input-side IDT electrode and in the structure of an output-side IDT electrode are disposed, and when the first filter part is disposed on a lower side and the second filter part is disposed on an upper side of the first filter part so that the input-side IDT electrodes are connected and the output-side IDT electrodes are connected, in cascade (in series) between a signal port and a ground port, an upper busbar in each of the IDT electrodes of the first filter part and a lower busbar in each of the IDT electrodes of the second filter part are electrically connected to each other.

Abstract: In an acoustic wave filter, a notch resonator is connected in series or parallel with a plurality of acoustic wave resonators connected in a ladder shape. The notch resonator has a main resonant frequency that is substantially equal to a sub-resonant frequency of the acoustic wave resonators. With this configuration, the occurrence of sub-resonant responses in filter characteristics can be suppressed, resulting in an improvement in communication characteristics.

Abstract: An integrated circuit (500) includes a semiconductor substrate (400) and an integrated circuit package (530). The semiconductor substrate (400) has a first pair of bonding pads (442, 444) conducting a differential output signal thereon and adapted to be coupled to an input of a first external filter, and a second pair of bonding pads (452, 454) conducting a differential input signal thereon and adapted to be coupled to an output of said first external filter. The integrated circuit package (530) encapsulates the semiconductor substrate (400) and has first (452, 454) and second (552, 554) terminal pairs corresponding and coupled to the first (442, 444) and second (452, 454) pairs of bonding pads, respectively. The first (452, 454) and second (552, 554) terminal pairs are separated by a first predetermined distance is sufficient to maintain an input-to-output isolation therebetween of at least a first predetermined amount.

Abstract: A notched SAW image frequency rejection filter system includes a SAW filter having an input, an output and a ground output and an impedance matching network including a first matching inductance connected to the SAW filter output and a second matching inductance connected to the ground output of the SAW filter; the SAW filter having an inherent internal capacitance that produces a predetermined capacitive leakage current at the image frequency; an inherent internal inductance that produces an inductance leakage current at the image frequency; and a boosted inherent parasitic ground inductance at the ground output of the SAW filter for generating a voltage across the second matching inductance to produce a compensation current which is substantially opposite in phase and substantially matched in magnitude with the capacitive leakage current for reducing the capacitive leakage current and increasing the image frequency rejection.

Abstract: An acoustic wave device comprising a piezoelectric layer on an omnidirectional acoustic mirror and excitation and/or reception means on a surface of said piezoelectric layer, capable of exciting waves in a band gap of the acoustic mirror.

Abstract: An acoustic wave filter device includes longitudinally coupled resonator-acoustic wave filters having a balanced-unbalanced conversion function, and increases the amount of attenuation in an attenuation band and improves the isolation characteristics when the acoustic wave filter device is used as a reception filter of a duplexer. The acoustic wave filter device includes an unbalanced terminal, first and second balanced terminals, first and second longitudinally coupled resonator-acoustic wave filters that are connected between the unbalanced terminal and the first balanced terminal and between the unbalanced terminal and the second balanced terminal, respectively, a first parallel resonator connected between the first balanced terminal and a ground potential, and a second parallel resonator connected between the second balanced terminal and the ground potential. The electrostatic capacitance of the first parallel resonator is different from the electrostatic capacitance of the second parallel resonator.

Abstract: A surface acoustic wave device includes a pair of reflectors and an interdigital transducer having a cross electrode having a interdigitated portion and a dummy portion and a dummy electrode. The dummy electrode has a length different from the length of the dummy portion of the cross electrode arranged adjacent to the dummy electrode.

Abstract: Improved coupling coefficients and desirable filter characteristics are exhibited in a SAW filter including an electrode pattern deposited on a piezoelectric substrate bonded directly to an anti-reflective layer, wherein the anti-reflective layer is bonded to a carrier through an adhesive layer such that a preselected thickness of the anti-reflective layer is sufficient for enhancing an acoustic match between the piezoelectric substrate and the adhesive layer.

Abstract: In a parametric G-Rake receiver, a method an apparatus computes initial estimates of one or more scaling parameters and initial combining weights for the parametric G-Rake receiver; estimates the SINR of a received signal based on a mean pilot symbol estimate and the initial combining weights; computes revised estimates for one or more scaling parameters based on the estimated SINR and the initial combining weights; and computes revised combining weights based on one or more revised scaling parameter estimates.

Abstract: An elastic wave device includes a piezoelectric substrate, an IDT electrode disposed on a piezoelectric device, a first dielectric layer disposed on the piezoelectric substrate such that it covers the IDT electrode, and a second dielectric layer disposed over the first dielectric layer. The second dielectric layer propagates transverse waves faster than that on the first dielectric layer. When a film thickness of the second dielectric layer is greater than a wave length of a major wave excited by the IDT electrode, a cut angle of the piezoelectric substrate in indication of Euler angles (?, ?, ?) is set to ??0°, ??0°, and ??0°. This suppresses deterioration of device characteristics.

Abstract: An anti-reflective acoustic diffusion device is provided by a group of irregularly dimensioned diffusing elements positioned on an acoustic wave substrate end that diffuse the SAW and eliminate unwanted acoustic reflections from the end of the substrate. The irregularly dimensioned diffusing elements are substantially irregular in size, shape, composition, and location and provide the desired diffusion into a nearly uniform distributed acoustic energy with a random phase. The anti-reflective acoustic diffusion device can be used with SAW, BAW or multiple acoustic wave configurations. This invention also encompasses an anti-reflective acoustic diffusion system and methods for diffusing acoustic reflections with anti-reflective acoustic diffusing elements.

Abstract: An acoustic wave device comprising a piezoelectric layer on an omnidirectional acoustic mirror and excitation and/or reception means on a surface of said piezoelectric layer, capable of exciting waves in a band gap of the acoustic mirror.

Abstract: A transducer includes an acoustic track in which an acoustic wave can be propagated, the acoustic track having a transversal fundamental mode, the acoustic track being subdivided in a transversal direction into an excitation area and two peripheral areas. The transducer also includes a first outside area and a second outside area bordering the acoustic track such that the acoustic track is arranged in the transversal direction between the first and second outside area. The transducer also includes peripheral areas configured such that the longitudinal phase velocity vRB of the acoustic wave in the respective peripheral area is greater than the longitudinal phase velocity vMB of the wave in the excitation area.

Abstract: Disclosed relates to an electromagnetic interference (EMI) filter. Capacitance and resistance or inductance of an EMI filter, which includes a resistor and a capacitor or an inductor and a capacitor, can be controlled, such that a cutoff frequency can be freely controlled without manufacturing a separate EMI filter according to a characteristic of a desired cutoff frequency. Further, an intelligent EMI filter that can be applied to a surge protection device, which includes an ESD protection function as well as the EMI filter, is provided, such that a process can be simplified and costs can be reduced.

Abstract: Apparatus and method for providing high density component assemblies, such as electromechanical or electro-optical assemblies.

Abstract: An IDT electrode (3) on a piezoelectric substrate (2) has an electrode including first metal layers (31a, 31b) formed of titanium or a titanium alloy, or chromium or a chromium alloy and second metal layers (32a, 32b) formed of aluminum or an aluminum alloy, copper or a copper alloy, or gold or a gold alloy, which are laminated alternately. The orientation degrees in the first metal layer (31a) that is closest to the surface of the piezoelectric substrate (2) in the first metal layers (31a, 31b) and the second metal layer (32a) that is closest to the surface of the piezoelectric substrate (2) in the second metal layers (32a, 32b) are higher than the orientation degrees in the upper metal layers. As compared with the prior art where the orientation degrees in the first metal layers (31a, 31b) and the second metal layers (32a, 32b) are not considered, the power handling capability of the IDT electrode (3) can be significantly improved.

Abstract: An antenna duplexer includes a piezoelectric substrate having a surface, a grounding terminal to be grounded, first and second surface acoustic wave (SAW) filters mounted on the piezoelectric substrate, first and second terminals connected to the first and second SAW filters, respectively, and a line mounted on the surface of the piezoelectric substrate between the first SAW filter and the second SAW filter. A stray coupling path is produced between the first and second terminals. A first end of the line is connected to the grounding terminal. A second end of the line opens and is coupled capacitively to the stray coupling path. The antenna duplexer has a large isolation characteristic between the surface acoustic wave filters.

Abstract: A proposed spread spectrum signal receiver includes a radio front-end unit and a processing unit. The radio front-end unit, in turn, has an antenna, a digitizing circuit and a primary buffer unit. The antenna is adapted to receive radio signals (SHF) from a plurality of signal sources, and the digitizing circuit is adapted to downconvert and filter the received signals (SHF), and generate sample values (SBP-D) thereof. The primary buffer unit is adapted to temporarily store the sample values (SBP-D) from the digitizing circuit and allow the processing unit to read out a first set of stored sample values (SBP-D) contemporaneously with the storing of a second set of sample values (SBP-D) in the primary buffer unit. The processing unit is adapted to receive the sample values (SBP-D) from the primary buffer unit, and based thereon, produce position/time related data (DPT).

Abstract: In an elastic wave device including an input side electrode and an output side electrode being a resonant single-phase unidirectional transducers (RSPUDT) provided with respective pairs of bus bars opposing to each other on a piezoelectric substrate and a number of excitation electrode fingers extending in a comb-teeth shape so as to respectively cross each other from the respective bus bars, the elastic waves are repeatedly reflected and amplified between the central part of the input side electrode and the central part of the output side electrode along the direction of extension of the respective bus bars by the excitation electrode fingers of the input side electrode and the output side excitation electrode, the elastic wave device includes a damper at least on either one of the input side bus bar or the output side bus bar in an area between the central part of the input side electrode in the direction of movement of the elastic waves and the central part of the output side electrode in the direction of

Abstract: A surface acoustic wave device has a duty that is greater than about 0.5, attenuation outside the pass band is increased, and an undesirable spurious response is effectively suppressed. The surface acoustic wave device includes an LiNbO3 substrate having Euler angles (0°±5°, ?±5°, 0°±10°), an electrode that is provided on the LiNbO3 substrate and that includes an IDT electrode primarily made of Cu, a first silicon oxide film that is provided in an area other than an area in which the electrode is arranged so as to have a thickness substantially equal to that of the electrode, and a second silicon oxide film that is arranged so as to cover the electrode and the first silicon oxide film, wherein the surface acoustic wave device utilizes an SH wave, wherein a duty D of the IDT electrode 3 is at least about 0.52, and ? of the Euler angles (0°±5, ?+5°, 0°±10°) is set so as to fall within a range that satisfies the following Inequality (1A) or (1B): (1) When 0.52?D?0.6, ?10×D+92.5?100×C???37.5×D2?57.75×D+104.