Using Surface Acoustic Waves Patents (Class 333/193)
  • Patent number: 11115001
    Abstract: A receiving filter includes a reception terminal which outputs reception signals from an antenna terminal, a second DMS filter configured by a longitudinally coupled double-mode type acoustic wave filter which is located in a signal path from the antenna terminal to the reception terminal, a fourth GND terminal given a reference potential, and a fourth GND wiring connected to the fourth GND terminal and to the second DMS filter. A reception terminal conductor configured by the reception terminal and the reception terminal wiring connected to the reception terminal and A fourth GND conductor configured by the fourth GND terminal and the fourth GND wiring are adjacent and are capacity-coupled with respect to each other.
    Type: Grant
    Filed: July 5, 2017
    Date of Patent: September 7, 2021
    Assignee: KYOCERA Corporation
    Inventor: Tomonori Urata
  • Patent number: 11115000
    Abstract: An extractor includes a band elimination filter that is connected between a common terminal and a first input-output terminal and that has a stop band equal or substantially equal to a first frequency band, and a band pass filter that is connected between the common terminal and a second input-output terminal and that has a pass band equal or substantially equal to a second frequency band that overlaps the first frequency band. The band pass filter includes, series arm resonators, three or more parallel arm resonators, and three or more inductors that are connected between the ground and the parallel arm resonators. The L value of a first inductor that is connected and nearest to the common terminal is smaller than the L value of a third inductor, and the L value of a second inductor that is connected and second-nearest to the common terminal is smaller than the L value of the third inductor.
    Type: Grant
    Filed: August 15, 2019
    Date of Patent: September 7, 2021
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventor: Norihiko Nakahashi
  • Patent number: 11115003
    Abstract: In an acoustic wave device, an antenna end resonator electrically closest to a first terminal is a first acoustic wave resonator. In each of the first acoustic wave resonator and a second acoustic wave resonator, a thickness of a piezoelectric layer is equal to or less than about 3.5?. A cut angle of the piezoelectric layer of the first acoustic wave resonator is within a range of ?B±4°. The cut angle of the piezoelectric layer of the second acoustic wave resonator has a larger difference from ?B (°) than the cut angle of the piezoelectric layer of the first acoustic wave resonator.
    Type: Grant
    Filed: July 6, 2020
    Date of Patent: September 7, 2021
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Ryo Nakagawa, Hideki Iwamoto, Tsutomu Takai, Yuichi Takamine
  • Patent number: 11108379
    Abstract: A duplexer includes a surface acoustic wave (SAW) device comprising a transmit filter and a receive filter formed on a piezoelectric substrate. The transmit filter includes a first transmit shunt resonator connected to a first transmit-filter ground terminal. The receive filter includes a first receive shunt resonator connected to a first receive-filter ground terminal. A ground coupling capacitor is connected between the first transmit-filter ground terminal and the first receive-filter ground terminal.
    Type: Grant
    Filed: February 20, 2019
    Date of Patent: August 31, 2021
    Assignee: Resonant Inc.
    Inventor: John Mazotta
  • Patent number: 11082027
    Abstract: An acoustic wave device includes: a first substrate made of a piezoelectric material; an acoustic wave element located on the first substrate; a bump located on the first substrate; a second substrate located on the first substrate through the bump, the second substrate facing the first substrate across an air gap; and a support layer that is located in at least a part of a periphery of the first substrate, is in contact with a side surface of the first substrate, and has a less linear thermal expansion coefficient than the first substrate.
    Type: Grant
    Filed: January 31, 2018
    Date of Patent: August 3, 2021
    Assignee: TAIYO YUDEN CO., LTD.
    Inventor: Motoi Yamauchi
  • Patent number: 11082030
    Abstract: A high-pass filter includes: at least one capacitor located in a first pathway between input and output terminals and connected between the input and output terminals; at least one inductor, a first end of the at least one inductor being coupled to the first pathway, a second end of the at least one inductor being coupled to a ground; at least one first acoustic wave resonator located in a second pathway connected in parallel to the first pathway between the input and output terminals, the at least one first acoustic wave resonator being connected in parallel to the at least one capacitor; and at least one second acoustic wave resonator, a first end of the at least one second acoustic wave resonator being coupled to the second pathway, a second end of the at least one second acoustic wave resonator being coupled to a ground.
    Type: Grant
    Filed: July 23, 2019
    Date of Patent: August 3, 2021
    Assignee: TAIYO YUDEN CO., LTD.
    Inventor: Hideyuki Sekine
  • Patent number: 11038484
    Abstract: An acoustic wave device includes a piezoelectric substrate and an IDT electrode on the piezoelectric substrate. The IDT electrode includes a first busbar and a second busbar that oppose each other, multiple first electrode fingers, multiple second electrode fingers, multiple first offset electrodes, and multiple second offset electrodes. A virtual line connecting the leading ends of the first electrode fingers is referred to as a first envelope. The first envelope is included relative to the acoustic-wave propagation direction. A virtual line connecting the leading ends of the second electrode fingers is referred to as a second envelope. The second envelope is inclined relative to the acoustic-wave propagation direction. The direction in which the first offset electrodes extend and the direction in which the second offset electrodes extend inclined relative to the direction orthogonal or substantially orthogonal to the acoustic-wave propagation direction.
    Type: Grant
    Filed: October 1, 2019
    Date of Patent: June 15, 2021
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventor: Katsuya Daimon
  • Patent number: 11031921
    Abstract: The acoustic wave filter (10A) includes a parallel-arm resonant circuit (12p). The parallel-arm resonant circuit (12p) includes a parallel-arm resonator (p1) and a frequency variable circuit (72p) that are connected in parallel. The frequency variable circuit (72p) includes a parallel-arm resonator (p2) that has a resonant frequency higher than that of the parallel-arm resonator (p1) and a switch (SW1) element. A frequency difference between a resonant frequency on a higher frequency side of the parallel-arm resonant circuit (12p) in a case where the switch (SW1) is OFF and a resonant frequency on a higher frequency side of the parallel-arm resonant circuit (12p) in a case where the switch (SW1) is ON is equal to or more than a frequency difference between a low frequency end frequency of the second attenuation band and a low frequency end frequency of the first attenuation band.
    Type: Grant
    Filed: October 2, 2019
    Date of Patent: June 8, 2021
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventor: Koji Nosaka
  • Patent number: 11031919
    Abstract: A surface acoustic wave (SAW) device includes a piezoelectric substrate, an interdigital transducer (IDT) electrode located on an upper surface of the piezoelectric substrate, a cover covering the upper surface of the piezoelectric substrate from above the IDT electrode, at least one first via conductor extending through at least part of the cover from the upper surface of the piezoelectric substrate to an upper surface of the cover, at least one second via conductor located, on the piezoelectric substrate, inward from the first via conductor in a plan view, extending through at least part of the cover from the upper surface of the piezoelectric substrate to the upper surface of the cover, and having a smaller diameter than the first via conductor, and a conductive layer located on the upper surface of the cover and extending over an upper end of the second via conductor.
    Type: Grant
    Filed: March 30, 2018
    Date of Patent: June 8, 2021
    Assignee: KYOCERA Corporation
    Inventors: Masaki Nambu, Hiroyuki Tanaka
  • Patent number: 11025227
    Abstract: A first filter of a multiplexer includes serial resonators and parallel resonators that are acoustic wave resonators. A first of the serial resonators that is closer to a common terminal than the other serial resonators is connected to the common terminal without the parallel resonators interposed therebetween. Each of the elastic wave resonators includes a substrate having piezoelectricity, an IDT electrode provided on the substrate, and a dielectric layer provided on the substrate to cover the IDT electrode. A thickness of the dielectric layer of the first serial resonator is smaller than a thickness of each of the dielectric layers of the remainder of the elastic wave resonators.
    Type: Grant
    Filed: November 26, 2018
    Date of Patent: June 1, 2021
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Yasuharu Nakai, Katsuya Daimon
  • Patent number: 10972070
    Abstract: An elastic wave device includes a piezoelectric substrate, and elastic wave elements on the piezoelectric substrate and including IDT electrodes, respectively. The IDT electrode of a first of the elastic wave elements includes first and second busbars, and the IDT electrode of a second of the elastic wave elements includes third and fourth busbars. The second busbar and the third busbar extend parallel or substantially parallel to each other, and are spaced by a gap in a direction perpendicular or substantially perpendicular to an elastic-wave propagating direction. Each of the second and third busbars includes first and second electrode layers at least a portion of which is laminated on the first electrode layer. The second electrode layer of the second busbar is cut in at least one location in a direction crossing the elastic-wave propagating direction.
    Type: Grant
    Filed: August 7, 2019
    Date of Patent: April 6, 2021
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventor: Yoshinori Kameoka
  • Patent number: 10958242
    Abstract: A filter includes a series arm resonator, a first parallel arm resonance circuit, and a second parallel arm resonance circuit. The first parallel arm resonance circuit includes: a first parallel arm resonator connected to a first node; a first capacitor and a first switch connected together in parallel and connected in series with the first parallel arm resonator; and a first inductor provided on a path connecting the node and ground to each other via the first switch. The second parallel arm resonance circuit includes: a second parallel arm resonator connected to a second node; a second capacitor and a second switch connected together in parallel and connected in series with the second parallel arm resonator; and a second inductor provided on a path connecting the second node and ground to each other via the second switch. The first and second inductor have different inductance values.
    Type: Grant
    Filed: March 27, 2019
    Date of Patent: March 23, 2021
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Hideki Tsukamoto, Koji Nosaka
  • Patent number: 10944381
    Abstract: A filter includes a series arm resonator, a first parallel arm resonance circuit and a second parallel arm resonance circuit. The each of the first parallel arm resonance circuit and the second parallel arm resonance circuit includes: a parallel arm resonator that is connected to a node; a pair of elements consisting of a capacitor and a switch, which are connected in parallel with each other, that is connected in series with the parallel arm resonator; and an inductor that is provided on a path that connects the node and ground to each other via the switch. The inductance value of the inductor of the first parallel arm resonance circuit and the inductance value of the inductor of the second parallel arm resonance circuit are substantially equal to each other.
    Type: Grant
    Filed: March 14, 2019
    Date of Patent: March 9, 2021
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Hideki Tsukamoto, Koji Nosaka
  • Patent number: 10938377
    Abstract: A surface acoustic wave resonator includes first and second surface acoustic wave resonator connected in series, and a third surface acoustic wave resonator connected in series with the second surface acoustic wave resonator. Each of the first to third surface acoustic wave resonators includes a pair of comb-shaped electrodes in which electrode fingers of one of the comb-shaped electrodes and electrode fingers of the other one of the comb-shaped electrodes are alternately arranged. The second surface acoustic wave resonator has a lower ratio of a width of the electrode fingers to a pitch between the electrode fingers than the first and third surface acoustic wave resonators.
    Type: Grant
    Filed: June 10, 2019
    Date of Patent: March 2, 2021
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventor: Toru Eihama
  • Patent number: 10931260
    Abstract: A SAW element configured to suppress spurious emissions resulting from non-periodicity of an IDT electrode finger arrangement. In one example, the SAW element is a resonator comprising an IDT electrode including a first plurality of IDT electrode fingers connected to a first busbar and a second plurality of IDT electrode fingers connected to a second busbar, and reflectors having a plurality of reflector fingers. The pluralities of first and second IDT electrode fingers are alternatively connected to each busbar by either normal connections or reversed connections and include regions arranged by at least two different types of pitches. The normal connections are such that either the odd-numbered or even-numbered IDT electrode fingers connect to the first busbar, and the reversed connections are such that the opposite group of IDT electrode fingers connect to the first busbar.
    Type: Grant
    Filed: December 17, 2019
    Date of Patent: February 23, 2021
    Assignee: SKYWORKS SOLUTIONS, INC.
    Inventors: Toru Yamaji, Rei Goto
  • Patent number: 10911022
    Abstract: A duplexer is disclosed. In an embodiment, the duplexer includes a Tx filter and an Rx filter, wherein the Tx filter includes first series-interconnected basic elements, each first basic element having a first electroacoustic resonator and first impedance converters interconnected in series between the first basic elements, wherein the Rx filter comprises second series-interconnected basic elements, each second basic element having a second electroacoustic resonator and second impedance converters interconnected in series between the second basic elements, wherein the first impedance converters in the Tx filter are impedance inverters, wherein the first resonators of the first basic elements in the Tx filter are only series resonators, wherein the second impedance converters in the Rx filter are admittance inverters, and wherein the second resonators of the second basic elements in the Rx filter are only parallel resonators.
    Type: Grant
    Filed: July 6, 2015
    Date of Patent: February 2, 2021
    Assignee: SnapTrack, Inc.
    Inventor: Edgar Schmidhammer
  • Patent number: 10911017
    Abstract: Acoustic resonator devices, filters, and methods are disclosed. An acoustic resonator includes a substrate and a lithium niobate (LN) plate having front and back surfaces. An acoustic Bragg reflector is sandwiched between the surface of the substrate and the back surface of the lithium niobite plate. An interdigital transducer (IDT) is formed on the front surface of the LN plate. The Euler angles of the lithium niobate plate are [0°, ?, 90° ], where ? is greater than or equal to ?15° and less than 0°.
    Type: Grant
    Filed: July 28, 2020
    Date of Patent: February 2, 2021
    Assignee: Resonant Inc.
    Inventor: Viktor Plesski
  • Patent number: 10897377
    Abstract: Provided is a bus network system including: a master node switch; and a plurality of slave node switches, wherein each of the plurality of slave node switches includes at least one band limit switch configured to transmit signals in a given band, and each of the plurality of slave node switches is configured to be physically on/off controlled.
    Type: Grant
    Filed: August 8, 2019
    Date of Patent: January 19, 2021
    Assignee: DAEGU GYEONGBUK INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Ji Woong Choi, Sung Min Han, Kyu Min Kim, Eun Min Choi
  • Patent number: 10886634
    Abstract: A filter feeding network, including a dielectric substrate, where a surface of the dielectric substrate's one side is provided a microstrip line, and a surface of the dielectric substrate's other side is provided with a metal ground; the microstrip line includes first and second power division circuits, and first and second filter circuits; an input and output end of the first filter circuit are respectively connected to the first power division circuit's input and output end correspondingly, the second filter circuit's input and output end are respectively connected to the second power division circuit's input and output end correspondingly, and the input end of the first filter circuit and second filter circuit are in conduction with the metal ground; and first and second power division circuit's output end feeds at least two array antenna units for ?45° polarization and +45° polarization respectively.
    Type: Grant
    Filed: November 11, 2016
    Date of Patent: January 5, 2021
    Assignee: TONGYU COMMUNICATION INC.
    Inventors: Wei Zhao, Zhuofeng Gao, Xiangxi Yao, Wenlan Wang, Mulin Liu, Samb Doudou, Qingchen Chu, Bin Wang
  • Patent number: 10886895
    Abstract: Even when frequency characteristics are changed in association with multiple communication bands, an attenuation required for a specific frequency band outside a pass band is obtained. A frequency-variable filter (10) includes multiple series-arm resonators (111, 112, 113), multiple parallel-arm resonators (121, 122, 123), a variable capacitor (21), and an inductor (31) having a fixed inductance. The multiple series-arm resonators (111, 112, 113) and the multiple parallel-arm resonators (121, 122, 123) are connected in a ladder shape. The variable capacitor (21) is connected in series with the parallel-arm resonator (121). The fixed inductor (31) is connected in series with the parallel-arm resonator (123).
    Type: Grant
    Filed: January 10, 2019
    Date of Patent: January 5, 2021
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventor: Masakazu Tani
  • Patent number: 10879871
    Abstract: In an acoustic wave device including a piezoelectric material substrate and supporting body bonded with each other through a bonding layer, it is an object to provide the acoustic wave device having the structure for further improving the propagation loss and temperature characteristics of frequency of an acoustic wave. An acoustic wave device includes a piezoelectric material substrate, an electrode on the piezoelectric material substrate, a supporting body, and a bonding layer for bonding the piezoelectric material substrate and the supporting body. The bonding layer is composed of quartz crystal.
    Type: Grant
    Filed: October 31, 2019
    Date of Patent: December 29, 2020
    Inventors: Tomoyoshi Tai, Masahiko Namerikawa, Takashi Yoshino
  • Patent number: 10879874
    Abstract: A surface elastic wave resonator comprises a piezoelectric material to propagate the surface elastic waves and a transducer inserted between a pair of reflectors comprising combs of interdigitated electrodes and having a number Nc of electrodes connected to a hot spot and an acoustic aperture W wherein the relative permittivity of the piezoelectric material is greater than about 15, a product of Nc·W/fa for the transducer being greater than 100 ?m·MHz?1, where fa is the antiresonance frequency of the resonator. A circuit comprises a load impedance and a resonator according to the invention and having an electrical response manifesting as a peak in the coefficient of reflection S11 at a frequency of a minimum value of the parameter S11 that is lower than ?10 dB, the antiresonance peak of the resonator being matched to the impedance of the load.
    Type: Grant
    Filed: July 28, 2016
    Date of Patent: December 29, 2020
    Assignee: SENSEOR
    Inventors: Sylvain Ballandras, Sébastien Alzuaga
  • Patent number: 10868516
    Abstract: A surface acoustic wave filter includes a longitudinally coupled filter connected between an input terminal and an output terminal on a main surface of a piezoelectric substrate and that includes longitudinally coupled resonators and a parallel arm resonator connected between a node between the input terminal and the longitudinally coupled filter and ground. A line connecting IDT electrodes at an input side of a portion of the longitudinally coupled resonators to the ground and a line connecting the parallel arm resonator to the ground are independently provided and are connected to the same ground terminal.
    Type: Grant
    Filed: November 9, 2017
    Date of Patent: December 15, 2020
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventor: Motoki Ozasa
  • Patent number: 10862456
    Abstract: An acoustic wave filter device includes a ground connection terminal connected to an external ground electrode, a serial arm resonator, a first parallel arm circuit connected to a first node of the serial arm resonator, the first node being positioned closer to an input/output terminal, and to the ground connection terminal, and a second parallel arm circuit connected to a second node of the serial arm resonator, the second node being positioned closer to an input/output terminal, and to the ground connection terminal. The first parallel arm circuit includes a parallel arm resonator having a resonant frequency higher than a center frequency of a filter pass band, and a frequency varying circuit connected to the parallel arm resonator and the ground connection terminal. The second parallel arm circuit includes a parallel arm resonator having a resonant frequency higher than the center frequency of the filter pass band.
    Type: Grant
    Filed: February 20, 2019
    Date of Patent: December 8, 2020
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventor: Koji Nosaka
  • Patent number: 10862458
    Abstract: An acoustic wave device includes first to third acoustic wave resonators connected in series, and the first acoustic wave resonator and the third acoustic wave resonator are respectively disposed on one side and another side of the second acoustic wave resonator. In the first to third acoustic wave resonators, a first common busbar is connected to one of reflectors of the first and second acoustic wave resonators, and a second common busbar is connected to one of reflectors of the second and third acoustic wave resonators.
    Type: Grant
    Filed: January 28, 2019
    Date of Patent: December 8, 2020
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventor: Yasuaki Shin
  • Patent number: 10862020
    Abstract: An elastic wave device in which a recess is provided on an upper side of a support, a piezoelectric thin film covers the recess, and an IDT electrode is provided on an upper surface of the piezoelectric thin film. A plate wave of an S0 mode or SH0 mode is used. A plurality of grooves are provided in the upper surface or lower surface of the piezoelectric thin film at a portion of the piezoelectric thin film that is positioned on a hollow section.
    Type: Grant
    Filed: May 10, 2017
    Date of Patent: December 8, 2020
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Yutaka Kishimoto, Tetsuya Kimura
  • Patent number: 10840876
    Abstract: Surface acoustic wave (SAW) resonator, SAW filters, and methods of fabricating SAW filters. A first plurality of parallel conductors extending from a first bus bar are formed on a surface of a 128-degree Y-cut lithium niobate substrate. A second plurality of parallel conductors extending from a second bus bar are formed on the surface of the substrate, the second plurality of parallel conductors interleaved with the first plurality of parallel conductors. An SiO2 layer overlays the first and second pluralities of parallel conductors. The first and second pluralities of parallel conductors are substantially copper and have a thickness DCU defined by 0.12P?DCU?0.24P, where P is a center-to-center spacing of adjacent parallel conductors. The SiO2 layer has a thickness DOX defined by 3.1DCU?DOX?4.5DCU.
    Type: Grant
    Filed: August 23, 2018
    Date of Patent: November 17, 2020
    Assignee: Resonant Inc.
    Inventors: Sean McHugh, Patrick Turner, Ventsislav Yantchev, Filip Iliev
  • Patent number: 10840878
    Abstract: An elastic wave device includes an IDT electrode disposed on a piezoelectric substrate and including first and second electrode fingers that are interdigitated. A region where the first and second electrode fingers overlap each other as seen in a direction of propagation of elastic waves is an excitation region. Edge portions where an acoustic velocity is lower than an acoustic velocity in a central portion are disposed on opposite sides of a central portion in the excitation region. A first busbar and second busbar include inner busbar portions, central busbar portions, and outer busbar portions. First and second offset electrode fingers extend from the inner busbar portions toward the leading ends of the second electrode fingers or first electrode fingers.
    Type: Grant
    Filed: October 19, 2017
    Date of Patent: November 17, 2020
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Katsuya Daimon, Masato Araki
  • Patent number: 10840885
    Abstract: A filter and a method for forming a filter are disclosed. In an embodiment a filter includes a first port, a second port and a signal path between the first port and the second port. The filter further includes a plurality of series resonators electrically connected in series in the signal path, a plurality of shunt paths, each electrically connecting the signal path to ground and one parallel resonator electrically connected in each shunt path, wherein at least one series resonator is an electroacoustic resonator, and wherein at least one parallel resonator comprises one acoustically inactive capacitor or an electrical connection of an acoustically active resonator and a de-tuning coil.
    Type: Grant
    Filed: October 24, 2018
    Date of Patent: November 17, 2020
    Assignee: QUALCOMM Incorporated
    Inventors: Oleksandr Gavryliuk, Mykola Shevelov, Petro Komakha, Georgiy Sevskiy, Alexander Chernyakov, Wai San Wong
  • Patent number: 10819310
    Abstract: A filter (11) includes a series-arm circuit (10) connected between an input/output terminal (11m) and an input/output terminal (11n); and a parallel-arm circuit (20) connected between a ground and a path that connects the input/output terminal (11m) and the input/output terminal (11n). One circuit among the series-arm circuit (10) and the parallel-arm circuit (20) is constituted by a parallel-arm resonator (p1) and a parallel-arm resonator (p2) that are connected in parallel to each other and that are connected to a node (x1) on the path. The parallel-arm resonators (p1) and (p2) form a pass band, together with another circuit among the series-arm circuit (10) and the parallel-arm circuit (20). The parallel-arm resonator (p2) has a resonant frequency lower than a resonant frequency of the parallel-arm resonator (p1) and has an impedance higher than an impedance of the parallel-arm resonator (p1).
    Type: Grant
    Filed: January 18, 2019
    Date of Patent: October 27, 2020
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Atsushi Horita, Koji Nosaka
  • Patent number: 10812041
    Abstract: An elastic wave device includes an IDT electrode on a piezoelectric substrate to define a longitudinally coupled resonator elastic wave filter, a three-dimensional wiring portion on the piezoelectric substrate and connected to the longitudinally coupled resonator elastic wave filter, and a cover surrounding the longitudinally coupled resonator elastic wave filter on the piezoelectric substrate. The three-dimensional wiring portion includes a lower layer wiring line, an upper layer wiring line, and an insulating layer stacked between the lower layer wiring line and the upper layer wiring line. The cover includes a portion on the three-dimensional wiring portion.
    Type: Grant
    Filed: November 21, 2018
    Date of Patent: October 20, 2020
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventor: Takuya Koyanagi
  • Patent number: 10784839
    Abstract: A high pass filter includes: a first resonant circuit including an inductor and a capacitor in parallel between first and second terminals; a second resonant circuit including an inductor and a capacitor in series between a first end of the first resonant circuit and a ground; a third resonant circuit including an inductor and a capacitor in series between a second end of the first resonant circuit and the ground; a fourth resonant circuit disposed between the first end of the first resonant circuit and the first terminal, and including a first acoustic resonator; and a fifth resonant circuit disposed between the second end of the first resonant circuit and the second terminal, and including a second acoustic resonator. Attenuation regions respectively formed by the first, second, and third resonant circuits are arranged in lower frequency regions than attenuation regions respectively formed by the fourth and fifth resonant circuits.
    Type: Grant
    Filed: November 5, 2018
    Date of Patent: September 22, 2020
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Jeong Hae Kim, Seong Jong Cheon, Hyung Jin Lee
  • Patent number: 10756625
    Abstract: An integrated module of acoustic wave device with active thermal compensation comprises a substrate, an acoustic wave filter, an active adjustment circuit and at least one variable capacitance device. The acoustic wave filter comprises a plurality of series acoustic wave resonators formed on the substrate, at least one shunt acoustic wave resonator formed on the substrate and a thermal sensing acoustic wave resonator. Each of the variable capacitance device is connected in parallel to one of the series and shunt acoustic wave resonators. The active adjustment circuit outputs an active thermal compensation signal correlated to a thermal variation sensed by the thermal sensing acoustic wave resonator to the variable capacitance device. The active thermal compensation signal induces a capacitance variation of the variable capacitance device such that the impact of the thermal variation to the acoustic wave device is compensated.
    Type: Grant
    Filed: June 27, 2017
    Date of Patent: August 25, 2020
    Assignee: WIN SEMICONDUCTORS CORP.
    Inventors: Re Ching Lin, Shu Hsiao Tsai, Cheng Kuo Lin, Chih-Feng Chiang, Fan Hsiu Huang, Tung-Yao Chou
  • Patent number: 10756698
    Abstract: An elastic wave device includes a multilayer film including a piezoelectric thin film laminated on a support substrate. In a region outside a region in which an IDT electrode is provided, the multilayer film is not disposed. A first insulating layer extends from at least a portion of the region to a region on the piezoelectric thin film. A wiring electrode extends to a region on the first insulating layer from a region on the piezoelectric thin film and to extend to a region on a portion of the first insulating layer located in the region. A support layer including a cavity defining a hollow space is provided on the support substrate. The support layer includes, on the wiring electrode, a portion extending from the region to a region above an inner end of the first insulating layer.
    Type: Grant
    Filed: March 29, 2019
    Date of Patent: August 25, 2020
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Takashi Yamane, Tsutomu Takai, Toru Takeshita
  • Patent number: 10756254
    Abstract: An object of the present invention is to provide a method of manufacturing a composite substrate including a piezoelectric layer with less Li amount variation and a support substrate. A method of manufacturing a composite substrate of the present invention includes a step of performing ion implantation into a piezoelectric substrate, a step of bonding the piezoelectric substrate and the support substrate, a step of separating the bonded substrate, at an ion-implanted portion of the piezoelectric substrate, into the piezoelectric layer bonded to the support substrate and the remaining piezoelectric substrate after the step of bonding the piezoelectric substrate and the support substrate, and a step of diffusing Li into the piezoelectric layer after the separating step.
    Type: Grant
    Filed: October 5, 2017
    Date of Patent: August 25, 2020
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Masayuki Tanno, Kazutoshi Nagata, Shoji Akiyama, Koji Kato
  • Patent number: 10742193
    Abstract: A filter includes a series-arm resonator located on a path that connects an input/output terminal (11m) with an input/output terminal (11n), and a first parallel-arm resonant circuit connected between a node, which is located on the path, and ground. The first parallel-arm resonant circuit includes a parallel-arm resonator, and a pair of a capacitor and a switch connected in parallel with each other and in series with the parallel-arm resonator between the parallel-arm resonator and ground. An interconnect line (a1) is connected to the input/output terminal (11m), and an interconnect line (a2) is connected to the input/output terminal. The parallel-arm resonator and the switch are connected by an interconnect line (a3). The interconnect line (a3) has a characteristic impedance lower than a characteristic impedance of the interconnect line (a1) or a characteristic impedance of the interconnect line (a2).
    Type: Grant
    Filed: March 18, 2019
    Date of Patent: August 11, 2020
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Takaya Wada, Koji Nosaka
  • Patent number: 10720903
    Abstract: A filter includes a series-arm resonator connected on a path connecting input/output terminals, and first and second parallel-arm resonators connected between the same node on the path and ground. A resonant frequency of the second parallel-arm resonator is higher than a resonant frequency of the first parallel-arm resonator, and an anti-resonant frequency of the second parallel-arm resonator is higher than an anti-resonant frequency of the first parallel-arm resonator. Each of the first and second parallel-arm resonators includes an acoustic wave resonator including an IDT electrode. The IDT electrode in the second parallel-arm resonator has a higher duty ratio than the IDT electrode in the first parallel-arm resonator, where the duty ratio is the ratio of the width to the pitch of electrode fingers.
    Type: Grant
    Filed: February 25, 2019
    Date of Patent: July 21, 2020
    Assignee: Murata Manufacturing Co., Ltd.
    Inventor: Koji Nosaka
  • Patent number: 10707833
    Abstract: An elastic wave device includes a piezoelectric substrate and IDT electrodes including first and second busbars and first and second electrode fingers. An intersection of the IDT electrodes includes a center region, and low-acoustic-velocity sections at both end portions of the center region in the direction in which the electrode fingers extend in the center region, sections in which the acoustic velocity is lower than in the center region. The length of the gap between the edge of the first electrode fingers and the second busbar and the length of the gap between the edge of the second electrode fingers and the first busbar are about 0.62? or more and about 0.98? or less, where ? denotes the wavelength, which is determined by the finger pitch of the IDT electrodes.
    Type: Grant
    Filed: November 13, 2018
    Date of Patent: July 7, 2020
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventor: Masakazu Mimura
  • Patent number: 10666227
    Abstract: Due to strong needs to reduce the dimensions and the cost of the RF filters and to reduce the number of filters required in an mobile handsets and wireless system covering numbers of operation bands, tunable RF filters which can cover as many bands or frequency ranges as possible are needed so that the number of filters can be reduced in the mobile handsets and wireless systems. The present invention provides tunable surface acoustic wave (SAW) IDT structures with the resonant frequency of the acoustic wave to be excited and to be transmitted tuned by digital to analog converters (DACs). The DAC converts an input digital signal to an output DC voltage and provide DC bias voltages to the SAW IDTs through integrated thin film biasing resistors. The polarity and the value of the output DC voltage are controlled by the input digital signal to achieve selection and tuning of the resonant frequency of the SAW IDTs.
    Type: Grant
    Filed: July 27, 2018
    Date of Patent: May 26, 2020
    Inventors: Cindy X. Qiu, Ishiang Shih, Chunong Qiu, Julia Qiu, Andy Shih, Yi-Chi Shih
  • Patent number: 10637433
    Abstract: An elastic wave device includes a mount board, a transmit filter, a receive filter, and a sealing resin layer. The transmit filter includes a first piezoelectric substrate, and is joined to the mount board by first bumps. The receive filter includes a second piezoelectric substrate, and is joined to the mount board by second bumps. The sealing resin layer is provided on the mount board. The height of each first bump is H1; the joint area, on the first piezoelectric substrate side, of each first bump is A1; and the joint area, on the mount board side, of each first bump is B1; the height of each second bump is H2; the joint area, on the second piezoelectric substrate side, of each second bump is A2; and the joint area, on the mount board side, of each second bump is B2. The first bumps and the second bumps satisfy at least one of: A1>A2 and B1>B2; and H1<H2.
    Type: Grant
    Filed: April 5, 2019
    Date of Patent: April 28, 2020
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventor: Yuji Fukuda
  • Patent number: 10615775
    Abstract: A multiplexer includes filters and a common terminal connected to an antenna element by a connection path, a first inductance element being connected between the connection path and a reference terminal. A terminal closer to the antenna element among an input terminal and an output terminal of one filter among the filters is connected to a parallel resonator and is connected to the common terminal with a second inductance element interposed therebetween. A terminal closer to the antenna element among an input terminal and an output terminal of each of other filters other than the one filter among the filters is connected to the common terminal and a series resonator.
    Type: Grant
    Filed: October 17, 2018
    Date of Patent: April 7, 2020
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Yuichi Takamine, Toshimaro Yoneda, Noriyoshi Ota
  • Patent number: 10615773
    Abstract: A system for a wireless communication infrastructure using single crystal devices. The wireless system can include a controller coupled to a power source, a signal processing module, and a plurality of transceiver modules. Each of the transceiver modules includes a transmit module configured on a transmit path and a receive module configured on a receive path. The transmit modules each include at least a transmit filter having one or more filter devices, while the receive modules each include at least a receive filter. Each of these filter devices includes a single crystal acoustic resonator device with at least a first electrode material, a single crystal material, and a second electrode material. Wireless infrastructures using the present single crystal technology perform better in high power density applications, enable higher out of band rejection (OOBR), and achieve higher linearity as well.
    Type: Grant
    Filed: September 11, 2017
    Date of Patent: April 7, 2020
    Assignee: Akoustis, Inc.
    Inventors: Ramakrishna Vetury, Shawn R. Gibb, Mark D. Boomgarden, Jeffrey B. Shealy
  • Patent number: 10581401
    Abstract: A module device includes electrode lands and signal wires on an upper surface defining one main surface of a module substrate. A filter chip is mounted on the module substrate. The filter chip includes first bumps connected to a signal potential, second bumps connected to a ground potential, and a third bump not electrically connected to a functional electrode portion. In a mount region, the third bump which is a floating bump is electrically connected to the signal wire.
    Type: Grant
    Filed: August 8, 2018
    Date of Patent: March 3, 2020
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventor: Akira Michigami
  • Patent number: 10581404
    Abstract: A surface acoustic wave (SAW) device includes a silicon substrate, a piezoelectric substrate formed of lithium niobate, an alumina layer interposed between the silicon substrate and the piezoelectric substrate, and at least one electrode on the piezoelectric substrate.
    Type: Grant
    Filed: September 7, 2016
    Date of Patent: March 3, 2020
    Assignee: Robert Bosch GmbH
    Inventor: Ashwin Samarao
  • Patent number: 10559741
    Abstract: A wafer-level chip-scale package includes a body, a conductive via passing through the body, a contact bump formed at a lower portion of the body and in electrical connection with a lower end of the conductive via, a piezoelectric substrate directly bonded to an upper end of the conductive via, and a cavity defined between a portion of the body and the piezoelectric substrate.
    Type: Grant
    Filed: June 19, 2019
    Date of Patent: February 11, 2020
    Assignee: SKYWORKS SOLUTIONS, INC.
    Inventor: Joseph Michael Bulger
  • Patent number: 10530334
    Abstract: Methods of forming a shear-mode acoustic wave filter on V-shaped grooves of a [100] crystal orientation Si layer over a substrate and the resulting devices are provided. Embodiments include forming a set of V-shaped grooves in a [100] crystal orientation Si layer over a substrate; and forming a shear-mode acoustic wave filter over the V-shaped grooves, the shear-mode acoustic wave filter including a first metal layer, a thin-film piezoelectric layer, and a second metal layer, wherein the second metal layer is an IDT pattern or a sheet.
    Type: Grant
    Filed: May 10, 2018
    Date of Patent: January 7, 2020
    Assignee: GLOBALFOUNDRIES SINGAPORE PTE. LTD.
    Inventors: Humberto Campanella-Pineda, You Qian, Vibhor Jain, Anthony Stamper, Rakesh Kumar
  • Patent number: 10507552
    Abstract: A solder material includes an alloy of at least five elements including Sn, Cu, Sb, and In, and 20 mass % or less of Ag. The solidus temperature of the solder material is higher than 290° C., the liquidus temperature of the solder material is 379° C. or less and is higher than the solidus temperature, and the temperature difference between the liquidus temperature and the solidus temperature is 70° C. or less.
    Type: Grant
    Filed: February 3, 2016
    Date of Patent: December 17, 2019
    Assignee: NIHON DEMPA KOGYO CO., LTD.
    Inventors: Toshimasa Tsuda, Kenichi Kikuchi, Tomotaka Kuroda, Daisuke Nishiyama, Hiroyuki Sasaki, Makoto Hatano, Hiroya Ishikawa
  • Patent number: 10483941
    Abstract: An acoustic wave device includes: a piezoelectric substrate; an IDT that is formed on the piezoelectric substrate and includes a pair of comb-shaped electrodes facing each other, each of the pair of comb-shaped electrodes including an grating electrode that excites an acoustic wave and a bus bar to which the grating electrode is connected; and reforming regions that are located only inside the piezoelectric substrate and arranged at intervals under the IDT, and in which a material of the piezoelectric substrate is reformed.
    Type: Grant
    Filed: December 22, 2016
    Date of Patent: November 19, 2019
    Assignee: TAIYO YUDEN CO., LTD.
    Inventor: Yohei Shimizu
  • Patent number: 10476470
    Abstract: An elastic wave filter device includes a piezoelectric film, a high acoustic velocity support substrate in which an acoustic velocity of a propagating bulk wave is larger than an acoustic velocity of a main mode elastic wave propagating in the piezoelectric film, and IDT electrodes in contact with the piezoelectric film. A serial arm resonator and a parallel arm resonator are defined by the IDT electrodes such that, a direction in which tips of first and second electrode fingers are connected defines a tilt angle with respect to a propagation direction of elastic waves excited by the IDT electrodes. A tilt angle of the serial arm resonator is different from a tilt angle of the parallel arm resonator.
    Type: Grant
    Filed: December 4, 2017
    Date of Patent: November 12, 2019
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventor: Yuichi Takamine
  • Patent number: RE47989
    Abstract: An acoustic wave device includes: a piezoelectric film made of an aluminum nitride film containing a divalent element and a tetravalent element, or a divalent element and a pentavalent element; and an electrode that excites an acoustic wave propagating through the piezoelectric film.
    Type: Grant
    Filed: July 20, 2017
    Date of Patent: May 12, 2020
    Assignee: TAIYO YUDEN CO., LTD.
    Inventors: Tsuyoshi Yokoyama, Yoshiki Iwazaki, Tokihiro Nishihara, Yosuke Onda