Abstract: Embodiments are related to micro-electromechanical system (MEMS) devices, systems and methods. In one embodiment, a MEMS resonating device comprises a resonator element configured to provide timing; and at least one passive temperature compensation structure arranged on the resonator element.

Abstract: An apparatus includes a capacitance-to-voltage converter circuit configured to be electrically coupled to a micro-electromechanical system (MEMS) sensor circuit. The capacitance-to-voltage converter circuit includes a differential chopping circuit path configured to receive a differential MEMS sensor output signal and invert a polarity of the differential chopping circuit path, and a differential sigma-delta analog to digital converter (ADC) circuit configured to sample the differential MEMS sensor output signal and provide a digital signal representative of a change in capacitance of the MEMS sensor.

Abstract: A microelectromechanical (MEM) filter is disclosed which has a plurality of lattice networks formed on a substrate and electrically connected together in parallel. Each lattice network has a series resonant frequency and a shunt resonant frequency provided by one or more contour-mode resonators in the lattice network. Different types of contour-mode resonators including single input, single output resonators, differential resonators, balun resonators, and ring resonators can be used in MEM filter. The MEM filter can have a center frequency in the range of 10 MHz-10 GHz, with a filter bandwidth of up to about 1% when all of the lattice networks have the same series resonant frequency and the same shunt resonant frequency. The filter bandwidth can be increased up to about 5% by using unique series and shunt resonant frequencies for the lattice networks.

Abstract: Embodiments are related to micro-electromechanical system (MEMS) devices, systems and methods. In one embodiment, a MEMS resonating device comprises a resonator element configured to provide timing; and at least one passive temperature compensation structure arranged on the resonator element.

Abstract: A digitally-tunable RF MEMS filter includes a substrate and a plurality of mechanically coupled resonators, wherein a first and a last resonator of the plurality of mechanically coupled resonators are configured to be electrostatically transduced. One or more of the plurality of mechanically coupled resonators are configured to be biased relative to the substrate such that the one or more biased resonators may be brought substantially in contact with the substrate. In a method of digitally tuning an RF MEMS filter having a mechanically coupled resonator array, a DC bias voltage is applied to at least a first resonator and a last resonator of the mechanically coupled resonator array such that motional boundary conditions for the at least first resonator and last resonator are selectable in proportion to the DC bias voltage.

Abstract: A MEMS array structure including a plurality of bulk mode resonators may include at least one resonator coupling section disposed between the plurality of bulk mode resonators. The plurality of resonators may oscillate by expansion and/or contraction in at least one direction/dimension. The MEMS array structure may include a plurality of sense electrodes and drive electrodes spaced apart from the plurality of bulk mode resonators by a gap. Each of at least one of the plurality of bulk mode resonators may be mechanically coupled to a substrate via or approximately at a respective at least one nodal point.

Abstract: A resonator comprises a resonator mass (34), a first connector (30) on a first side of the mass connected between the resonator mass and a first fixed mounting and a second connector (32) on a second, opposite, side of the mass connected between the resonator mass and a second fixed mounting. Drive means drives the mass (34) into a resonant mode in which it oscillates in a sideways direction, thereby compressing one of the first and second connectors while extending the other of the first and second connectors.

Abstract: An array of coupled resonators including: an input unit that supplies an input electrical signal; an electrical excitation unit that electrically excites N coupled resonators of the array using the input electrical signal, wherein the electrical excitation unit includes, for each of the N coupled resonators, an actuator, connected to the input unit, that actuates a respective one of the N coupled resonators according to the input electrical signal, and a variable gain input amplifier that amplifies actuation of a respective one of the N coupled resonators; and a controller that controls a specific setting of a variable gain of each of the variable gain input amplifier.

Abstract: A thin film piezoelectric bulk acoustic wave resonator has a multilayer structure including a piezoelectric thin film, a first metal electrode film, and a second metal electrode film. At least a part of the piezoelectric thin film is interposed between the first and second metal electrodes. A resonance part and a connection part are formed on an insulating substrate as films by a thin film forming apparatus. The resonance part vibrates in radial extension mode with a center of the piezoelectric thin film used as a node, the piezoelectric thin film of two resonance parts is polarized in a direction perpendicular to a film surface, and a width of the connection part is one-fourth or less of a width of two resonance parts.

Abstract: A resonator includes a substantially disk shaped portion having a plurality of axes of symmetry and is configured to resonate in a plurality of resonant modes by symmetrically deforming about the plurality of axes of symmetry.

Abstract: A design structure is embodied in a machine readable medium for designing, manufacturing, or testing a design. The design structure includes a substrate including a silicon layer. Furthermore, the design structure includes a metal layer on a bottom side of the silicon layer and a dielectric layer on a top side of the silicon layer. Additionally, the design structure includes a top-side interconnect of the through-silicon via bandpass filter on a surface of the dielectric layer and a plurality of contacts in the dielectric layer in contact with the top-side interconnect. Further, the design structure includes a plurality of through-silicon vias through the substrate and in contact with the plurality of contacts, respectively, and the metal layer.

Abstract: System and method for a microelectromechanical system (MEMS) is disclosed. A preferred embodiment comprises a first anchor region, a vibrating MEMS structure fixed to the first anchor region, a first electrode adjacent the vibrating MEMS structure, a second electrode adjacent the vibrating MEMS structure wherein the vibrating MEMS structure is arranged between the first and the second electrode.

Abstract: The invention relates to MEMS devices. In one embodiment, a micro-electromechanical system (MEMS) device comprises a resonator element having a circumference, an anchor region, and a plurality of beam elements coupling the anchor region and the resonator element. Further embodiments comprise additional devices, systems and methods.

Abstract: The invention relates to MEMS devices. In one embodiment, a micro-electromechanical system (MEMS) device comprises a resonator element having a circumference, an anchor region, and a plurality of beam elements coupling the anchor region and the resonator element. Further embodiments comprise additional devices, systems and methods.

Abstract: Micro-Electro-Mechanical Systems (MEMS) resonator designs having support structures that minimize or substantially reduce anchor losses, thereby improving a quality factor (Q) of the MEMS resonators, are provided. In general, a MEMS resonator includes a resonator body connected to anchors via support structures. The anchors are connected to or are part of a substrate on which the MEMS resonator is formed. The support structures operate to support the resonator body in free space to enable vibration. The support structures are designed to minimize or substantially reduce energy loss through the anchors into the substrate.

Abstract: Method of manufacturing a MEMS device integrated in a silicon substrate. In parallel to the manufacturing of the MEMS device passive components as trench capacitors with a high capacitance density can be processed. The method is especially suited for MEMS resonators with resonance frequencies in the range of 10 MHz.

Abstract: A thin film piezoelectric bulk acoustic wave resonator has a multilayer structure including a piezoelectric thin film, a first metal electrode film, and a second metal electrode film. At least a part of the piezoelectric thin film is interposed between the first and second metal electrodes. A resonance part and a connection part are formed on an insulating substrate as films by a thin film forming apparatus. The resonance part vibrates in radial extension mode with a center of the piezoelectric thin film used as a node, the piezoelectric thin film of two resonance parts is polarized in a direction perpendicular to a film surface, and a width of the connection part is one-fourth or less of a width of two resonance parts.

Abstract: A resonator system such as a microresonator system and a method of making same are provided. In at least one embodiment, a mechanical circuit-based approach for boosting the Q of a vibrating micromechanical resonator is disclosed. A low Q resonator is embedded into a mechanically-coupled array of much higher Q resonators to raise the functional Q of the composite resonator by a factor approximately equal to the number of resonators in the array. The availability of such a circuit-based Q-enhancement technique has far reaching implications, especially considering the possibility of raising the functional Q of a piezoelectric resonator by merely mechanically coupling it to an array of much higher Q capacitively-transduced ones to simultaneously obtain the most attractive characteristics of both technologies: low impedance from the piezo-device and high-Q from the capacitive ones. Furthermore, the manufacturing repeatability of such micromechanical resonator-based products is enhanced.

Abstract: A MEMS array structure including a plurality of bulk mode resonators may include at least one resonator coupling section disposed between the plurality of bulk mode resonators. The plurality of resonators may oscillate by expansion and/or contraction in at least one direction/dimension. The MEMS array structure may include a plurality of sense electrodes and drive electrodes spaced apart from the plurality of bulk mode resonators by a gap. The MEMS array structure may further include at least one anchor coupling section disposed between the at least one resonator coupling section and a substrate anchor.

Abstract: A resonator includes a substantially disk shaped portion having a plurality of axes of symmetry and is configured to resonate in a plurality of resonant modes by symmetrically deforming about the plurality of axes of symmetry.

Abstract: A method for fabrication of single crystal silicon micromechanical resonators using a two-wafer process, including either a Silicon-on-insulator (SOI) or insulating base and resonator wafers, wherein resonator anchors, a capacitive air gap, isolation trenches, and alignment marks are micromachined in an active layer of the base wafer; the active layer of the resonator wafer is bonded directly to the active layer of the base wafer; the handle and dielectric layers of the resonator wafer are removed; viewing windows are opened in the active layer of the resonator wafer; masking the single crystal silicon semiconductor material active layer of the resonator wafer with photoresist material; a single crystal silicon resonator is machined in the active layer of the resonator wafer using silicon dry etch micromachining technology; and the photoresist material is subsequently dry stripped.

Abstract: A system and method are provided which includes ring resonator structures coupled together with beam structure(s). The ring resonators are configured to operate in the contour or breathe mode. The center of the coupling beam structure is used as a nodal anchor point for anchoring the ring resonators and the beam structures, and also provides a reflecting interface. In an embodiment, the coupling beam structure includes two quarter-wavelength matched beams and an anchor located at a nodal point for coupling the two quarter-wavelength matched beams and ring resonator structures. The symmetric ring design also provides a differential drive and sense configuration while balancing the driving forces about the anchor located at the center of the beam structure. The system exhibits low energy losses while providing large sensing signals and a high quality factor (Q) of about 186,000 at a resonant frequency of about twenty-nine (29) MHz.

Abstract: An object of the invention is to provide a coupling element of an MEMS filter with design flexibility and minimization of mass loading effects. The invention provides a structure wherein the mass loading effects are not reflected on the MEMS filter characteristic by using a nanosize coupling element with a very small mass compared to a microsize MEMS resonator, such as a carbon nanotube (CNT), as a coupling element part.

Abstract: A MEMS resonator has an outer element having an inner surface, the inner surface defining an area and a inner element coupled to the outer element and disposed within the area. The MEMS resonator also has an actuation electrode, in communication with the outer element, for generating electrostatic signals that cause the inner element to flex in a periodic manner.

Abstract: A resonator system such as a microresonator system and a method of making same are provided. In at least one embodiment, a mechanical circuit-based approach for boosting the Q of a vibrating micromechanical resonator is disclosed. A low Q resonator is embedded into a mechanically-coupled array of much higher Q resonators to raise the functional Q of the composite resonator by a factor approximately equal to the number of resonators in the array. The availability of such a circuit-based Q-enhancement technique has far reaching implications, especially considering the possibility of raising the functional Q of a piezoelectric resonator by merely mechanically coupling it to an array of much higher Q capacitively-transduced ones to simultaneously obtain the most attractive characteristics of both technologies: low impedance from the piezo-device and high-Q from the capacitive ones. Furthermore, the manufacturing repeatability of such micromechanical resonator-based products is enhanced.

Abstract: A MEMS filter has an input layer for receiving a signal input, and an output layer for providing a signal output. The MEMS filter also has a first resonator and a second resonator coupled to the first resonator such that movement transduced in the first resonator by the signal input causes movement of the second resonator which transduces the signal output. A method of manufacturing a MEMS filter is also disclosed. A dielectric layer is formed on a base. A patterned electrode layer is formed at least in part on the dielectric layer. The base is etched to define a resonator structure. A method of adjusting a desired input impedance and an output impedance of a dielectrically transduced MEMS filter having transduction electrodes coupled to a dielectric film is further disclosed. The method includes adjusting a DC bias voltage on the transduction electrodes.

Abstract: A method for fabrication of single crystal silicon micromechanical resonators using a two-wafer process, including either a Silicon-on-insulator (SOI) or insulating base and resonator wafers, wherein resonator anchors, a capacitive air gap, isolation trenches, and alignment marks are micromachined in an active layer of the base wafer; the active layer of the resonator wafer is bonded directly to the active layer of the base wafer; the handle and dielectric layers of the resonator wafer are removed; viewing windows are opened in the active layer of the resonator wafer; masking the single crystal silicon semiconductor material active layer of the resonator wafer with photoresist material; a single crystal silicon resonator is machined in the active layer of the resonator wafer using silicon dry etch micromachining technology; and the photoresist material is subsequently dry stripped.

Abstract: There are many inventions described and illustrated herein, as well as many aspects and embodiments of those inventions. In one aspect, the present invention is directed to one or more microelectromechanical ring resonator structures having a circular or substantially circular outer surface and a circular or substantially circular inner surface. The microelectromechanical ring resonator(s) include an anchor support element having an impedance matching structure coupled to at least one substrate anchor. The impedance matching structure may be a beam, having a predetermined length, which couples the ring resonator(s) to substrate anchor. In one embodiment, the impedance matching structure operates in a bulk-elongation mode. In another embodiment, the impedance matching structure operates in a flexure mode. In operation, when induced, the microelectromechanical ring resonator structure oscillates in an elongating/compressing or breathing mode (or in a primarily or substantially elongating or breathing mode).

Abstract: High-Q micromechanical resonator devices and filters utilizing same are provided. The devices and filters include a vibrating polysilicon micromechanical “hollow-disk” ring resonators obtained by removing quadrants of material from solid disk resonators, but purposely leaving intact beams or spokes of material with quarter-wavelength dimensions to non-intrusively support the resonators. The use of notched support attachments closer to actual extensional ring nodal points further raises the Q. Vibrating micromechanical hollow-disk ring filters including mechanically coupled resonators with resonator Q's greater than 10,000 achieve filter Q's on the order of thousands via a low-velocity coupling scheme. A longitudinally mechanical spring is utilized to attach the notched-type, low-velocity coupling locations of the resonators in order to achieve a extremely narrow passband.

Abstract: Exemplary embodiments of the invention provide a micromechanical electrostatic resonator which designs high frequency, increases a ratio of output voltage to input voltage, and designs low drive voltage or reduced power consumption. A micromechanical electrostatic resonator of exemplary embodiments includes a plate-shaped vibration body, a pair of electrodes arranged oppositely to each other at both sides of the vibration body with a gap from an outer circumferential portion of the vibration body, a feeding device to apply in-phase alternating-current power to the pair of electrodes, and a detecting device to obtain an output corresponding to a change in capacitance between the vibration body and the electrodes. The planar shape of the vibration body takes a shape having a curved outline which comprises a neck portion.

Abstract: A micromechanical resonate device having an extensional wine-glass mode shape is described herein. Different embodiments of the device may employ vibrating polysilicon micromechanical ring resonators, utilizing a unique extensional wine-glass mode shape to achieve lower impedance than previous UHF resonators at frequencies as high as 1.2-GHz with a Q of 3,700, and 1.47-GHz (highest to date for polysilicon micromechanical resonators) with a Q of 2,300. The 1.2-GHz resonator exhibits a measured motional resistance of 560 k? with a dc-bias voltage of 20V, which is 6× lower than measured on radial contour mode disk counterparts at the same frequency, and which can be driven down as low as 2 k? when a dc-bias voltage of 100V and electrode-to-resonator gap spacing of 460 ? are used.

Abstract: A micromechanical resonator device and a method of making the micromechanical resonator device, as well as other extensional mode devices are provided wherein anchor losses are minimized by anchoring at one or more side nodal points of the resonator device. Lower damping forces are experienced by the resonator device when operated in air.

Abstract: A micromechanical resonator device and a micromechanical device utilizing same are disclosed based upon a radially or laterally vibrating disk structure and capable of vibrating at frequencies well past the GHz range. The center of the disk is a nodal point, so when the disk resonator is supported at its center, anchor dissipation to the substrate is minimized, allowing this design to retain high-Q at high frequency. In addition, this design retains high stiffness at high frequencies and so maximizes dynamic range. Furthermore, the sidewall surface area of this disk resonator is often larger than that attainable in previous flexural-mode resonator designs, allowing this disk design to achieve a smaller series motional resistance than its counterparts when using capacitive (or electrostatic) transduction at a given frequency. Capacitive detection is not required in this design, and piezoelectric, magnetostrictive, etc. detection are also possible.

Abstract: A micromechanical resonator device and a method of making the micromechanical resonator device, as well as other extensional mode devices are provided wherein anchor losses are minimized by anchoring at one or more side nodal points of the resonator device. Lower damping forces are experienced by the resonator device when operated in air.

Abstract: A high-frequency module includes a dielectric plate in which a resonator is formed and a cover for covering the dielectric plate. A hole is provided in the cover. A laser beam for laser trimming passes through the hole. The area of opening and the depth of the hole are defined so that electromagnetic waves in a usable frequency band are cut off in the hole. An electrical characteristic is measured in a state where all components including the cover are assembled, and laser trimming is performed through the hole so as to obtain a desired characteristic.

Abstract: A micromechanical resonator device and a micromechanical device utilizing same are disclosed based upon a radially or laterally vibrating disk structure and capable of vibrating at frequencies well past the GHz range. The center of the disk is a nodal point, so when the disk resonator is supported at its center, anchor dissipation to the substrate is minimized, allowing this design to retain high-Q at high frequency. In addition, this design retains high stiffness at high frequencies and so maximizes dynamic range. Furthermore, the sidewall surface area of this disk resonator is often larger than that attainable in previous flexural-mode resonator designs, allowing this disk design to achieve a smaller series motional resistance than its counterparts when using capacitive (or electrostatic) transduction at a given frequency. Capacitive detection is not required in this design, and piezoelectric, magnetostrictive, etc. detection are also possible.

Abstract: Electromechanical resonating devices such as MEMS resonators are provided in semiconductor structures and devices having high-quality monocrystalline semiconductor layers formed by utilizing compliant substrates. The semiconductor layer is patternwise etched to define a vibrational mode resonator member with one or more supports mechanically coupled to the member. A portion beneath the member is etched to provide clearance for vibrational mode operation of the resonating member. The semiconductor layer is selectively doped to define one or more conductive pathways to the resonating member.

Abstract: A first type of MEMS resonator adapted to be fabricated on a SOI wafer is provided. A second type of MEMS resonator that is fabricated using deep trench etching and occupies a small area of a semiconductor chip is taught. Overtone versions of the resonators that provide for differential input and output signal coupling are described. In particular resonators suited for differential coupling that are physically symmetric as judged from center points, and support anti-symmetric vibration modes are provided. Such resonators are robust against signal noise caused by jarring. The MEMS resonators taught by the present invention are suitable for replacing crystal oscillators, and allowing oscillators to be integrated on a semiconductor chip. An oscillator using the MEMS resonator is also provided.

Abstract: A micromechanical resonator device and a micromechanical device utilizing same are disclosed based upon a radially or laterally vibrating disk structure and capable of vibrating at frequencies well past the GHz range. The center of the disk is a nodal point, so when the disk resonator is supported at its center, anchor dissipation to the substrate is minimized, allowing this design to retain high-Q at high frequency. In addition, this design retains high stiffness at high frequencies and so maximizes dynamic range. Furthermore, the sidewall surface area of this disk resonator is often larger than that attainable in previous flexural-mode resonator designs, allowing this disk design to achieve a smaller series motional resistance than its counterparts when using capacitive (or electrostatic) transduction at a given frequency. Capacitive detection is not required in this design, and piezoelectric, magnetostrictive, etc. detection are also possible.

Abstract: Integrated circuit fabrication technique for constructing novel MEMS devices, specifically band-pass filter resonators, in a manner compatible with current integrated circuit processing, and completely encapsulated to optimize performance and eliminate environmental corrosion. The final devices may be constructed of single-crystal silicon, eliminating the mechanical problems associated with using polycrystalline or amorphous materials. However, other materials may be used for the resonator. The final MEMS device lies below the substrate surface, enabling further processing of the integrated circuit, without protruding structures. The MEMS device is about the size of a SRAM cell, and may be easily incorporated into existing integrated circuit chips. The natural frequency of the device may be altered with post-processing or electronically controlled using voltages and currents compatible with integrated circuits.

Abstract: Several MEMS-based methods and architectures which utilize vibrating micromechanical resonators in circuits to implement filtering, mixing, frequency reference and amplifying functions are provided. Apparatus is provided for selecting at least one desired passband or channel in an RF transmitter subsystem utilizing a bank of vibrating micromechanical devices. One of the primary benefits of the use of such architectures is a savings in power consumption by trading power for high selectivity (i.e., high Q). Consequently, the present invention relies on the use of a large number of micromechanical links in SSI networks to implement signal processing functions with basically zero DC power consumption.

Abstract: Integrated circuit fabrication technique for constructing novel MEMS devices, specifically band-pass filter resonators, in a manner compatible with current integrated circuit processing, and completely encapsulated to optimize performance and eliminate environmental corrosion. The final devices may be constructed of single-crystal silicon, eliminating the mechanical problems associated with using polycrystalline or amorphous materials. However, other materials may be used for the resonator. The final MEMS device lies below the substrate surface, enabling further processing of the integrated circuit, without protruding structures. The MEMS device is about the size of a SRAM cell, and may be easily incorporated into existing integrated circuit chips. The natural frequency of the device may be altered with post-processing or electronically controlled using voltages and currents compatible with integrated circuits.

Abstract: There is provided a method and a corresponding apparatus for establishing the proper bandwidth at one frequency in a microwave, dielectric resonator waveguide filter.Bandwidth is determined by the product of the resonant center frequency and the interresonator coupling coefficient. The interresonator coupling coefficient has been found to vary depending upon the interresonator spacing as well as the position at which the resonators intercept the electromagnetic field distributed across the waveguide.This method establishes the proper combination of field-intercepting position and interresonator spacing such that the proper bandwidth is established at one frequency.