Abstract: An RF signal is processed by coupling an input signal into a signal loop, the signal loop comprising a resonator and a processing block, and filtering the input signal in the signal loop to produce an output signal by obtaining a plurality of resonator outputs from the resonator and processing the plurality of resonator outputs to generate feedback signals. The feedback signals are connected to a point upstream of the resonator. At least one of the plurality of resonator outputs is processed in the processing block. The signal loop is definable by a transfer function having poles, and the plurality of resonator outputs are processed such that the poles of the transfer function are independently controllable.

Abstract: There is provided a piezoelectric vibrator element which is excellent in vibration characteristics, high in quality, and capable of suppressing a frequency fluctuation after a frequency adjustment. The piezoelectric vibrator element is provided with a piezoelectric plate having a pair of vibrating arm parts, an electrode film disposed on obverse and reverse surfaces of the piezoelectric plate, and weight metal films for a frequency adjustment disposed on the electrode film at the obverse surface side in the vibrating arm parts. The reverse surface of the vibrating arm part has a reverse side exposure part from which the piezoelectric plate is exposed. The obverse surface of the vibrating arm part has an obverse side exposure part from which the weight metal film and the electrode film are removed, and from which the piezoelectric plate is exposed.

Abstract: A microelectromechanical system (MEMS) resonator includes a resonant semiconductor structure, drive electrode, sense electrode and electrically conductive shielding structure. The first drive electrode generates a time-varying electrostatic force that causes the resonant semiconductor structure to resonate mechanically, and the first sense electrode generates a timing signal in response to the mechanical resonance of the resonant semiconductor structure. The electrically conductive shielding structure is disposed between the first drive electrode and the first sense electrode to shield the first sense electrode from electric field lines emanating from the first drive electrode.

Abstract: Surface acoustic wave resonators are disclosed. In certain embodiments, a surface acoustic wave resonator can include a high impedance layer, a piezoelectric layer over the high impedance layer, an interdigital transducer electrode over the piezoelectric layer, and a low impedance layer between the high impedance layer and the piezoelectric layer. An acoustic impedance of the high impedance layer is greater than an acoustic impedance of the piezoelectric layer. An acoustic impedance of the low impedance layer is lower than the acoustic impedance of the high impedance layer. The piezoelectric layer can have a cut angle in a range from 115° to 135°. The surface acoustic wave resonator is configured to generate a Rayleigh mode surface acoustic wave having a wavelength of ?.

Abstract: A semiconductor structure includes a substrate; a sensing device disposed over the substrate and including a plurality of protruding members protruded from the sensing device; a sensing structure disposed adjacent to the sensing device and including a plurality of sensing electrodes protruded from the sensing structure towards the sensing device; and an actuating structure disposed adjacent to the sensing device and configured to provide an electrostatic force on the sensing device based on a feedback from the sensing structure. Further, a method of manufacturing the semiconductor structure is also disclosed.

Abstract: A device includes a micro-electromechanical system (MEMS) device layer comprising a proof mass. The proof mass includes a first proof mass portion and a second proof mass portion. The first proof mass portion is configured to move in response to a stimuli. The second proof mass portion has a spring attached thereto. The device further includes a substrate disposed parallel to the MEMS device layer. The substrate comprises a bumpstop configured to limit motion of the first proof mass portion. The device includes a first electrode disposed on the substrate facing the second proof mass portion. The first electrode is configured to apply a pulling force onto the second proof mass portion and to move the second proof mass portion towards the first electrode.

Abstract: A variable filter has a signal loop defined between a signal input and a signal output. A plurality of circuit elements connected in the signal loop, the plurality of circuit elements comprising a frequency tunable resonator, and an adjustable scaling block that applies a gain factor that is adjustable in a range that comprises a positive gain and a negative gain. A controller is connected to 1) tune the frequency tunable resonator; and to 2) adjust the gain factor of the adjustable scaling block between a negative gain factor to a positive gain factor providing for variable Q independent of frequency.

Abstract: A system for generating, forming and receiving electromagnetic transmissions according to a dynamically selectable electromagnetic pattern, beam pattern or beam form can use a selectably altered backplane structure. A spatially dependent pattern of amplitudes and/or phases can be formed by selecting a state of the selectably altered backplane structure from a set of states. The altered backplane structure can include a movable mechanical structure that causes a set of patterns of spatially dependent amplitudes of electromagnetic energy depending on a position of the structure. A beam pattern from a set of beam patterns can be selected by selecting a state (e.g., the position) of the backplane structure that creates a set of spatially dependent amplitudes of electromagnetic energy.

Abstract: A radio frequency (RF) MEMS resonator is embedded in an active positive feedback loop to form a tunable RF channel-selecting radio transceiver employing a super-regenerative reception scheme. This transceiver harnesses the exceptionally high Q (around 100,000) and voltage-controlled frequency tuning of a resonator structure to enable selection of any one of among twenty 1 kHz wide RF channels over an 80 kHz range, while rejecting adjacent channels and consuming <490 ?W. Such transceivers are well suited to wireless sensor node applications, where low-power and simplicity trump transmission rate. Electrical stiffness-based frequency tuning also allows this same device to operate as a frequency shift keyed (FSK) transmitter, making a complete transceiver in one simple device. Finally, the geometric flexibility of resonator structure design should permit a large range of usable RF frequencies, from the presently demonstrated 60.6-MHz VHF, all the way up to UHF.

Abstract: In a method of manufacturing a piezoelectric device, during an isolation formation step, a supporting substrate has a piezoelectric thin film formed on its front with a compressive stress film present on its back. The compressive stress film compresses the surface on a piezoelectric single crystal substrate side of the supporting substrate, and the piezoelectric thin film compresses the back of the supporting substrate, which is opposite to the surface on the piezoelectric single crystal substrate side. Thus, the compressive stress produced by the compressive stress film and that produced by the piezoelectric thin film are balanced in the supporting substrate, which causes the supporting substrate to be free of warpage and remain flat. A driving force that induces isolation in the isolation formation step is gasification of the implanted ionized element rather than the compressive stress to the isolation plane produced by the piezoelectric thin film.

Abstract: An electronic device includes a substrate, an electrode formed on the substrate, and a movable portion provided above the electrode, the movable portion being elastically deformable, in which the movable potion includes a shape memory alloy film.

Abstract: Disclosed are a capacitor and a method of fabricating the same. The capacitor includes a first electrode; a second electrode spaced apart from the first electrode while facing the first electrode; a driving member connected to the second electrode to move the second electrode relative to the first electrode; and an insulating connection member between the driving member and the second electrode.

Abstract: In some embodiments, the present disclosure provides a MEMS package. The MEMS package includes a MEMS IC comprising a MEMS substrate, a dielectric layer disposed over the MEMS substrate, and a piezoelectric layer disposed over the dielectric layer. The dielectric layer includes a flexible diaphragm made of dielectric material, and the piezoelectric layer includes a piezoelectric opening over the flexible diaphragm. A CMOS IC includes a CMOS substrate and an electrical interconnect structure. The CMOS IC is bonded to the MEMS IC so the electrical interconnect structure is proximate to the piezoelectric layer and so the CMOS IC encloses a back cavity over the flexible diaphragm. A support layer is disposed between the electrical interconnect structure and the piezoelectric layer. The support layer has a support layer opening which is disposed at a position vertically aligned with the flexible diaphragm and which is a part of the back cavity.

Abstract: An acoustic wave device includes: a piezoelectric thin film resonator including: a substrate; a lower electrode formed on the substrate; at least two piezoelectric films formed on the lower electrode; an insulating film sandwiched by the at least two piezoelectric films; and an upper electrode formed on the at least two piezoelectric films, wherein an area of the insulating film within a resonance region, in which the lower electrode and the upper electrode face each other across the at least two piezoelectric films, is different from an area of the resonance region.

Abstract: Embodiments of apparatuses, systems and methods relating to temperature compensation of acoustic resonators in the electrical domain are disclosed. Other embodiments may be described and claimed.

Abstract: A micromechanical device includes a substrate, a micromechanical structure supported by the substrate and configured for overtone resonant vibration relative to the substrate, and a plurality of electrodes supported by the substrate and spaced from the micromechanical structure by respective gaps. The plurality of electrodes include multiple drive electrodes configured relative to the micromechanical structure to excite the overtone resonant vibration with a differential excitation signal, or multiple sense electrodes configured relative to the micromechanical structure to generate a differential output from the overtone resonant vibration.

Abstract: A disk resonator gyroscope includes a quartz base, a quartz resonator disk having a central pillar connected to the base, the quartz resonator disk having a surface facing the base and having plurality of circumferential slots in the surface of the quartz resonator disk around the central pillar, and an electrode comprised of quartz and connected to the base outside of an outer edge of the resonator disk.

Abstract: A MEMS resonator system that reduces interference signals arising from undesired capacitive coupling between different system elements. The system, in one embodiment, includes a MEMS resonator, electrodes, and at least one resonator electrode shield. In certain embodiments, the resonator electrode shield ensures that the resonator electrodes interact with either one or more shunting nodes or the active elements of the MEMS resonator by preventing or reducing, among other things, capacitive coupling between the resonator electrodes and the support and auxiliary elements of the MEMS resonator structure. By reducing the deleterious effects of interfering signals using one or more resonator electrode shields, a simpler, lower interference, and more efficient system relative to prior art approaches is presented.

Abstract: An apparatus includes a capacitance-to-voltage converter circuit configured to be electrically coupled to a micro-electromechanical system (MEMS) sensor circuit. The capacitance-to-voltage converter circuit includes a differential chopping circuit path configured to receive a differential MEMS sensor output signal and invert a polarity of the differential chopping circuit path, and a differential sigma-delta analog to digital converter (ADC) circuit configured to sample the differential MEMS sensor output signal and provide a digital signal representative of a change in capacitance of the MEMS sensor.

Abstract: A contour mode micromechanical piezoelectric resonator. The resonator has a bottom electrode; a top electrode; and a piezoelectric layer disposed between the bottom electrode and the top electrode. The piezoelectric resonator has a planar surface with a cantilevered periphery, dimensioned to undergo in-plane lateral displacement at the periphery. The resonator also includes means for applying an alternating electric field across the thickness of the piezoelectric resonator. The electric field is configured to cause the resonator to have a contour mode in-plane lateral displacement that is substantially in the plane of the planar surface of the resonator, wherein the fundamental frequency for the displacement of the piezoelectric resonator is set in part lithographically by the planar dimension of the bottom electrode, the top electrode or the piezoelectric layer.

Abstract: A periodic signal generator is configured to generate high frequency signals characterized by relatively low temperature coefficients of frequency (TCF). This generator may include an oscillator containing a pair of equivalent MEMs resonators therein, which are configured to support bulk acoustic wave and surface wave modes of operation at different resonance frequencies. Each resonator includes a stack of layers including a semiconductor resonator body (e.g., Si-body), a piezoelectric layer (e.g., AIN layer) on the resonator body and interdigitated drive and sense electrodes on the piezoelectric layer. The oscillator is configured to support the generation of first and second periodic signals having unequal first and second frequencies (f1, f2) from first and second resonators within the pair. These first and second periodic signals are characterized by respective first and second temperature coefficients of frequency (TCf1, TCf2), which may differ by at least about 10 ppm/° C.

Abstract: MEMS resonators containing a first material and a second material to tailor the resonator's temperature coefficient of frequency (TCF). The first material has a different Young's modulus temperature coefficient than the second material. In one embodiment, the first material has a negative Young's modulus temperature coefficient and the second material has a positive Young's modulus temperature coefficient. In one such embodiment, the first material is a semiconductor and the second material is a dielectric. In a further embodiment, the quantity and location of the second material in the resonator is tailored to meet the resonator TCF specifications for a particular application. In an embodiment, the second material is isolated to a region of the resonator proximate to a point of maximum stress within the resonator. In a particular embodiment, the resonator includes a first material with a trench containing the second material.

Abstract: An oscillation circuit includes a plurality of MEMS vibrators each having a first terminal and a second terminal, and having respective resonant frequencies different from each other, an amplifier circuit (an inverting amplifier circuit) having an input terminal and an output terminal, and a connection circuit adapted to connect the first terminal of one of the MEMS vibrators and the input terminal to each other, and the second terminal of the MEMS vibrator and the output terminal to each other to thereby connect the one of the MEMS vibrators and the amplifier circuit (the inverting amplifier circuit) to each other.

Abstract: An oscillator includes: a plurality of MEMS vibrators each having a first terminal and a second terminal, and having respective resonant frequencies different from each other; an amplifier circuit having an input terminal and an output terminal; a connection circuit adapted to connect the first terminal of one of the MEMS vibrators and the input terminal to each other, and the second terminal of the one of the MEMS vibrators and the output terminal to each other; a signal reception terminal adapted to receive a switching signal used to switch a state of the connection circuit; and a switching circuit adapted to make the connection circuit switch the MEMS vibrator to be connected to the amplifier circuit based on the switching signal, wherein the MEMS vibrators are housed in an inside of a cavity, and the signal reception terminal is disposed outside the cavity.

Abstract: A microelectromechanical structure (MEMS) device includes a secondary MEMS element displaceably coupled to a substrate. A primary MEMS element is displaceably coupled to the secondary MEMS element and has a resonant frequency substantially equal to the secondary MEMS element and has a much larger displacement than the secondary MEMS element.

Abstract: A resonant filter including a matrix of n×m resonators of N/MEMS type, each resonator including an actuating mechanism and a detection mechanism. An input of the filter, configured to receive an electrical input signal, is electrically connected to the resonator actuating mechanism. The outputs of the resonator detecting mechanism are electrically connected together and to an output of the filter, such that the signal to be obtained as an output of the filter is an image of the sum of the mechanical responses of the resonators. The resonators are not mechanically coupled together.

Abstract: It is an object to provide a test method of a process, an electric characteristic, and a mechanical characteristic of a structure body in a micromachine without contact. A structure body including a first conductive layer, a second conductive layer provided in parallel to the first conductive layer, and a sacrifice layer or a space provided between the first conductive layer and the second conductive layer is provided; an antenna connected to the structure body is provided; electric power is supplied to the structure body wirelessly through the antenna; and an electromagnetic wave generated from the antenna is detected as a characteristic of the structure body.

Abstract: A microelectromechanical (MEM) filter is disclosed which has a plurality of lattice networks formed on a substrate and electrically connected together in parallel. Each lattice network has a series resonant frequency and a shunt resonant frequency provided by one or more contour-mode resonators in the lattice network. Different types of contour-mode resonators including single input, single output resonators, differential resonators, balun resonators, and ring resonators can be used in MEM filter. The MEM filter can have a center frequency in the range of 10 MHz-10 GHz, with a filter bandwidth of up to about 1% when all of the lattice networks have the same series resonant frequency and the same shunt resonant frequency. The filter bandwidth can be increased up to about 5% by using unique series and shunt resonant frequencies for the lattice networks.

Abstract: A method of operating a micro-electromechanical system, comprising a resonator; an actuation electrode; and a first detection electrode, to filter and mix a plurality of signals. The method comprises applying a first alternating voltage signal to the actuation electrode, wherein an actuation force is generated having a frequency bandwidth that is greater than and includes a resonant bandwidth of a mechanical frequency response of the resonator, and wherein a displacement of the resonator is produced which is filtered by the mechanical frequency response and varies a value of an electrical characteristic of the first detection electrode. The method also comprises applying a second alternating voltage signal to the first detection electrode, wherein the second voltage signal is mixed with the varying value to produce a first alternating current signal. The first alternating current signal is detected at the first detection electrode.

Abstract: A microelectromechanical filter is provided. The microelectromechanical filter includes an input electrode, an output electrode, one or several piezoelectric resonators, one or several high quality factor resonators, and one or several coupling beams. The input electrode and the output electrode are disposed on the piezoelectric resonators. The high quality factor resonator is silicon or of piezoelectric materials, and there is no metal electrode on top of the resonator. The coupling beam is connected between the piezoelectric resonator and the high quality factor resonator. The coupling beam transmits an acoustic wave among the resonators, and controls a bandwidth of filter. The microelectromechanical filter with low impedance and high quality factor fits the demand for next-generation communication systems.

Abstract: A dual in-situ mixing approach for extended tuning range of resonators. In one embodiment, a dual in-situ mixing device tunes an input radio-frequency (RF) signal using a first mixer, a resonator body, and a second mixer. In one embodiment, the first mixer is coupled to receive the input RF signal and a local oscillator signal. The resonator body receives the output of the first mixer, and the second mixer is coupled to receive the output of the resonator body and the local oscillator signal to provide a tuned output RF signal as a function of the frequency of local oscillator signal.

Abstract: Carbon nanofiber resonator devices, methods for use, and applications of said devices are disclosed. Carbon nanofiber resonator devices can be utilized in or as high Q resonators. Resonant frequency of these devices is a function of configuration of various conducting components within these devices. Such devices can find use, for example, in filtering and chemical detection.

Abstract: A digitally-tunable RF MEMS filter includes a substrate and a plurality of mechanically coupled resonators, wherein a first and a last resonator of the plurality of mechanically coupled resonators are configured to be electrostatically transduced. One or more of the plurality of mechanically coupled resonators are configured to be biased relative to the substrate such that the one or more biased resonators may be brought substantially in contact with the substrate. In a method of digitally tuning an RF MEMS filter having a mechanically coupled resonator array, a DC bias voltage is applied to at least a first resonator and a last resonator of the mechanically coupled resonator array such that motional boundary conditions for the at least first resonator and last resonator are selectable in proportion to the DC bias voltage.

Abstract: Systems including varactor devices are provided. A varactor device (400) includes a gap closing actuator (GCA) varactor (200), includes a drive comb structure (201), an output varactor structure (514) defining an output capacitance, a reference varactor structure (214) defining a reference capacitance, and a movable truss comb structure (204) interdigitating the drive comb, the output varactor, and the reference varactor structures. The truss comb structure moves along a motion axis (205) between interdigitating positions based on a bias voltage. The device also includes a feedback circuit (404) configured for modifying an input bias voltage based on the reference capacitance to produce the output bias voltage that provides a target capacitance associated with the input bias voltage at the output varactor structure.

Abstract: The invention relates to design of micromechanical resonators and, more precisely, to the design of microelectromechanical systems (MEMS) resonators. The invention provides an improved design structure for a microelectromechanical systems (MEMS) resonator including a movable mass structure and a spring structure. The spring structure includes a spring element. The spring element is anchored from one end and connected to a plurality of electrode fingers on another end. The plurality of electrode fingers are operatively connected together at the other end of the spring element. The improved structure is frequency robust to manufacturing variations and enables reliable frequency referencing with good performance, particularly in small size solutions.

Abstract: A method of wafer level packaging includes providing a substrate including a buried oxide layer and a top oxide layer, and etching the substrate to form openings above the buried oxide layer and a micro-electro-mechanical systems (MEMS) resonator element between the openings, the MEMS resonator element enclosed within the buried oxide layer, the top oxide layer, and sidewall oxide layers. The method further includes filling the openings with polysilicon to form polysilicon electrodes adjacent the MEMS resonator element, removing the top oxide layer and the sidewall oxide layers adjacent the MEMS resonator element, bonding the polysilicon electrodes to one of a complementary metal-oxide semiconductor (CMOS) wafer or a carrier wafer, removing the buried oxide layer adjacent the MEMS resonator element, and bonding the substrate to a capping wafer to seal the MEMS resonator element between the capping wafer and one of the CMOS wafer or the carrier wafer.

Abstract: A MEMS array structure including a plurality of bulk mode resonators may include at least one resonator coupling section disposed between the plurality of bulk mode resonators. The plurality of resonators may oscillate by expansion and/or contraction in at least one direction/dimension. The MEMS array structure may include a plurality of sense electrodes and drive electrodes spaced apart from the plurality of bulk mode resonators by a gap. Each of at least one of the plurality of bulk mode resonators may be mechanically coupled to a substrate via or approximately at a respective at least one nodal point.

Abstract: A contour mode micromechanical piezoelectric resonator. The resonator has a bottom electrode; a top electrode; and a piezoelectric layer disposed between the bottom electrode and the top electrode. The piezoelectric resonator has a planar surface with a cantilevered periphery, dimensioned to undergo in-plane lateral displacement at the periphery. The resonator also includes means for applying an alternating electric field across the thickness of the piezoelectric resonator. The electric field is configured to cause the resonator to have a contour mode in-plane lateral displacement that is substantially in the plane of the planar surface of the resonator, wherein the fundamental frequency for the displacement of the piezoelectric resonator is set in part lithographically by the planar dimension of the bottom electrode, the top electrode or the piezoelectric layer.

Abstract: A nano electromechanical integrated circuit filter and method of making. The filter comprises a silicon substrate; a sacrificial layer; a device layer including at least one resonator, wherein the resonator includes sub-micron excitable elements and wherein the at least one resonator possess a fundamental mode frequency as well as a collective mode frequency and wherein the collective mode frequency of the at least one resonator is determined by the fundamental frequency of the sub-micron elements.

Abstract: A resonator, an elastic wave transmission element and a method for fabricating the transmission element are provided. The elastic wave transmission element has a first side and a second side. The elastic wave transmission element includes a plurality of structures sequentially arranged along a direction from the first side toward the second side. Each of the structures has a different defect which is different to each other. The impedance of the structures decreases gradually along the direction. As such, the elastic wave transmission element has an impedance match function.

Abstract: An oscillator includes: a plurality of MEMS vibrators formed on a substrate; and an oscillator configuration circuit connected to the plurality of MEMS vibrators, wherein the plurality of MEMS vibrators each have a beam structure, and the respective beam structures are different, whereby their resonant frequencies are different.

Abstract: A resonator comprising a beam formed from a first material having a first Young's modulus and a first temperature coefficient of the first Young's modulus, and a second material having a second Young's modulus and a second temperature coefficient of the second Young's modulus, a sign of the second temperature coefficient being opposite to a sign of the first temperature coefficient at least within operating conditions of the resonator, wherein the ratio of the cross sectional area of the first material to the cross sectional area of the second material varies along the length of the beam, the cross sectional areas being measured substantially perpendicularly to the beam.

Abstract: A resonator comprises a resonator mass (34), a first connector (30) on a first side of the mass connected between the resonator mass and a first fixed mounting and a second connector (32) on a second, opposite, side of the mass connected between the resonator mass and a second fixed mounting. Drive means drives the mass (34) into a resonant mode in which it oscillates in a sideways direction, thereby compressing one of the first and second connectors while extending the other of the first and second connectors.

Abstract: Disclosed herein is a resonator including, a vibrating portion having a conductor portion, and three or more insulating portions provided so as to electrically separate the conductor portion into a plurality of blocks, wherein when a potential difference is caused across both ends in each of the three or more insulating portions, the vibrating portion carries out a resonance vibration based on a longitudinal vibration in accordance with a frequency of an A.C. signal inputted to each of corresponding ones of the plurality of blocks in the conductor portion.

Abstract: A microelectromechanical systems (MEMS) device includes a tuning electrode, a drive electrode, and a resonator. The resonator is anchored to a substrate and is configured to resonate in response to a signal on the drive electrode. The MEMS device includes a tuning plate coupled to the resonator and positioned above the tuning electrode. The tuning plate is configured to adjust a resonant frequency of the resonator in response to a voltage difference between the resonator and the tuning electrode. In at least one embodiment of the MEMS device, the tuning plate and the tuning electrode are configured to adjust the resonant frequency of the resonator substantially independent of the signal on the drive electrode.

Abstract: An array of coupled resonators including: an input unit that supplies an input electrical signal; an electrical excitation unit that electrically excites N coupled resonators of the array using the input electrical signal, wherein the electrical excitation unit includes, for each of the N coupled resonators, an actuator, connected to the input unit, that actuates a respective one of the N coupled resonators according to the input electrical signal, and a variable gain input amplifier that amplifies actuation of a respective one of the N coupled resonators; and a controller that controls a specific setting of a variable gain of each of the variable gain input amplifier.

Abstract: A MEMS resonator, comprising a planar resonator body formed of two different materials with opposite sign temperature coefficient of Young's modulus. A first portion of one material extends across the full thickness of the resonator body. This provides a design which allows reduced temperature drift.

Abstract: Mechanical resonating structures are described, as well as related devices and methods. The mechanical resonating structures may have a compensating structure for compensating temperature variations.

Abstract: A design structure is embodied in a machine readable medium for designing, manufacturing, or testing a design. The design structure includes a substrate including a silicon layer. Furthermore, the design structure includes a metal layer on a bottom side of the silicon layer and a dielectric layer on a top side of the silicon layer. Additionally, the design structure includes a top-side interconnect of the through-silicon via bandpass filter on a surface of the dielectric layer and a plurality of contacts in the dielectric layer in contact with the top-side interconnect. Further, the design structure includes a plurality of through-silicon vias through the substrate and in contact with the plurality of contacts, respectively, and the metal layer.

Abstract: A tunable MEMS filter is disclosed, having a substrate with first and second isolated substrate areas. First and second anchor points are coupled to the substrate. A base is coupled to the first and second anchor points by first and second coupling beams, respectively. A dielectric layer is coupled to the base. An input conductor is coupled to the at least one dielectric layer. An output conductor is coupled to the at least one dielectric layer. A method of tuning a center frequency and a bandwidth of a MEMS resonator filter is also disclosed. A first bias voltage is adjusted between a base layer and input and output conductor layers. A second bias voltage is adjusted between the base layer and isolated substrate areas. The center frequency and the bandwidth are determined until the adjustments to the bias voltages provide a desired center frequency and a desired bandwidth.