Abstract: The width and location of a hysteresis window of an interferometric modulator may be altered by adjusting various physical characteristics of the interferometric modulator. Thus, depending on the particular application for which the interferometric modulators are manufactured, the width and location of the hysteresis window may be altered. For example, in some applications, reducing the power required to operate an array of interferometric modulators may be an important consideration. In other applications, the speed of the interferometric modulators may be of more importance, where the speed of an interferometric modulator, as used herein, refers to the speed of actuating and relaxing the moveable mirror. In other applications, the cost and ease of manufacturing may be of most importance. Systems and methods are introduced that allow selection of a width and location of a hysteresis window by adjusting various physical characteristics.

Abstract: A transistor single-pole-single-throw circuit device includes at least a transistor single-pole-single-throw circuit having a first transistor and a second transistor, and an inductor capacitor (LC) resonator having an inductor and a capacitor connected in series, allowing two ends of the LC resonator connected to the first source and the first drain of the first transistor, respectively. The transistor single-pole-single-throw circuit device adopts an LC resonator having an inductor and a capacitor connected in series to connect with the first source and the first drain of the first transistor. The inductor couples and resonates with a parasitic capacitance of the transistor, to reduce signal loss due to emerged parasitic capacitance when the conventional single-pole-single-throw circuit selects a switch transistor with a larger width.

Abstract: Various embodiments are provided herein for a configurable high frequency coaxial switch. The switch includes a switch housing module that has at least two ports and is adapted for operation in a wide frequency band. The switch also includes at least one frequency-matching port component module that is configured to connect a transmission line to one of the ports of the switch housing module. The at least one frequency-matching port component module is also configured to provide a match to a desired frequency range. In use, the switch housing module together with the at least one frequency-matching port component module allow for operation of the configurable high frequency coaxial switch at the desired frequency range.

Abstract: A micro-electromechanical device includes an actuation electrode and a suspended electrode. The actuation electrode is disposed on a substrate. The suspended electrode is suspended proximate to the actuation electrode. The suspended electrode includes support members and a plate member. Each of the support members is clamped at either end to the substrate via anchors and the plate member is supported by the support members. The support members are flexible in response to an actuation voltage that is applied between the actuation electrode and the suspended electrode to allow the suspended electrode to electrostatically pull towards the actuation electrode. A signal line is coupled to the suspended electrode.

Abstract: A MEMS switch is provided including a substrate, a movable actuator coupled to the substrate and having a first side and a second side, a first fixed electrode coupled to the substrate and positioned on the first side of the movable actuator to generate a first actuation force to pull the movable actuator toward a conduction state, and a second fixed electrode coupled to the substrate and positioned on the second side of the movable actuator to generate a second actuation force to pull the movable actuator toward a non-conducting state.

Abstract: The present invention relates to MEM switches. More specifically, the present invention relates to a system and method for making MEM switches having a common ground plane. One method for making MEM switches includes: patterning a common ground plane layer on a substrate; forming a dielectric layer on the common ground plane layer; depositing a DC electrode region through the dielectric layer to contact the common ground plane layer; and depositing a conducting layer on the DC electrode region so that regions of the conducting layer contact the DC electrode region, so that the common ground plane layer provides a common ground for the regions of the conducting layer.

Abstract: The systems and methods described herein provide for a radio frequency micro-electromechanical systems switch having two or more resonant frequencies. The switch can be configured as a capacitive shunt switch having a deflectable member coupled between two electrodes over a transmission line. A first insulator can be located between one of the electrodes and the deflectable member to form a capacitive element. The deflectable member can be deflectable between an up-state and a down-state, the down-state capacitively coupling the deflectable member with the transmission line. The degree by which the deflectable member overlaps the first insulator can be adjusted to adjust the capacitance of the capacitive element and the resulting resonant frequency.

Abstract: A switch circuit 1 includes a unit circuit including capacitors 12, 14, an inductor 20, and a FET 30 (switching element). The capacitors 12, 14 are provided in a path P1 (first path) connecting I/O terminals 92, 94. The capacitors 12, 14 are serially connected to each other. To the path P1, a path P2 (second path) is connected. The path P2 includes the inductor 20 and the FET 30, which are serially connected to each other. To be more detailed, an end of the inductor 20 is connected to a connection point N, and the drain (or source) of the FET 30 is connected to the other end of the inductor 20. The source (or drain) of the FET 30 is grounded.

Abstract: A dimensionally flexible sparse matrix comprising multiple ports connected to a plurality of interconnected universal switches is disclosed. Each universal switch has at least three terminals and is switchable to connect any pair or all three terminals together. The plurality of interconnected universal switches are independently switchable to connect any one or more ports of the sparse matrix to any subset of the other ports. The sparse matrix may also be configurable to duplicate the connectivity of a variety of dimensionally different switch matrices by designating a first subset of the multiple ports as row ports and a second subset of the remaining ports as column ports with the added flexibility of connecting row-to-row and/or column-to column. The small physical size of signal stubs in the universal switches results in a signal path between any pair of terminals that may be suitable for the transmission of signal frequencies greater than approximately 500 mega-hertz.

Abstract: A component is provided for an impedance change in a coplanar waveguide which includes two grounding conductors and a signal line lying between the grounding conductors, as well as a conducting connecting element, which has a covering surface for the two grounding conductors and the signal line, and is electrically insulated, so that in each case a capacitor is formed. The connecting element and the lines are situated and arranged so that the respective capacitor between the grounding conductors and the connecting element has an invariable capacitance, but the capacitor between the connecting element and the signal line has a variable capacitance. A structure is also provided in which in an exactly opposite way, the respective capacitor between the grounding conductors and the connecting element has a variable capacitance, but the capacitor between the connecting element and the signal line has an invariable capacitance. Furthermore, a method for producing such a component is also provided.

Abstract: A microelectromechanical system (MEMS) switch comprising a radio frequency (RF) transmission line; a structurally discontinuous RF conductor adjacent to the RF transmission line; a pair of cantilevered piezoelectric actuators flanking the RF conductor; a contact pad connected to the pair of cantilevered piezoelectric actuators; a pair of cantilevered structures connected to the RF conductor; a plurality of air bridges connected to the pair of cantilevered piezoelectric actuators; and a plurality of contact dimples on the contact pad. Preferably, the RF transmission line comprises a pair of co-planar waveguide ground planes flanking the RF conductor; and a plurality of ground straps connected to the pair of co-planar waveguide ground planes, wherein the RF transmission line is operable to provide a path along which RF signals propagate.

Abstract: A linear antenna switch arm comprising a field effect transistor comprising a source, a drain and a plurality of gates; a signal line connected between source and drain, the signal line comprising at least one signal line resistor; at least one gate being connected to the signal line by a connection line, the join between connection line and signal line comprising a node; the at least one gate being selected from the plurality of gates such that the adjacent gates on each side of the connected gates are not connected to the signal line.

Abstract: The switch circuit 1 includes a common terminal 10 (common port), a plurality of branch terminals 22, 24, a common path P0 connecting the common terminal 10 and a diverging point N, branch paths P1, P2 connecting the diverging point N and the branch terminals 22, 24 respectively, distributed constant FETs 32, 34 respectively provided in the branch paths P1, P2, and transmission lines 42, 44 provided between the diverging point N on the branch paths P1, P2 and the distributed constant FETs 32, 34 respectively. Here, the transmission lines 42, 44 are longer than 45% of ?/4 but shorter than ?/4, when ? designates a propagation wavelength under an operating frequency.

Abstract: A vibration type MEMS switch and a method of fabricating the vibration type MEMS switch. The vibration type MEMS switch includes a vibrating body supplied with an alternating current voltage of a predetermined frequency to vibrate in a predetermined direction; and a stationary contact point spaced apart from the vibrating body along a vibration direction of the vibrating body. When a direct current voltage with a predetermined magnitude is applied to the stationary contact point, a vibration margin of the vibrating body is increased, the vibrating body contacts the stationary contact point and the vibration type MEMS switch is turned on. A first substrate is bonded to a second substrate to isolate the vibrating body in a sealed vacuum space. The vibration type MEMS switch is turned on and/off by a resonance.

Abstract: A MEMS switch and method of fabrication comprises a RF transmission line; a RF beam structure comprising a RF conductor; a cantilevered piezoelectric actuator coupled to the RF beam structure; a plurality of air bridges connected to the cantilevered piezoelectric actuator; and a plurality of contact dimples on the pair on the RF beam structure. The RF transmission line comprises a pair of co-planar waveguide ground planes flanking the RF conductor; and a plurality of ground straps, wherein the RF transmission line is operable to provide a path along which RF signals propagate. The cantilevered piezoelectric actuator comprises a dielectric layer connected to the RF beam structure; a bottom electrode connected to the dielectric layer; a top electrode; and a piezoelectric layer in between the top and bottom electrodes, wherein the top electrode is offset from an edge of the piezoelectric layer and the bottom electrode.

Abstract: In a multi-pole, double-throw switch, three multi-terminal device connectors are coupled to a printed circuit board, along with two header connectors and a movable array. A pcb trace electrically couples each terminal of each device connector to one or more corresponding contacts at the header connectors. The movable is movable between a first throw position in which a first header connector is engaged, and a second throw position in which a second header connector is engaged. In the first throw position, each terminal of a first of the three device connectors is electrically connected to a corresponding terminal of a second of the three device connectors. In the second throw position, each terminal of the first of the three device connectors is electrically connected to a corresponding terminal of a third of the three device connectors.

Abstract: A vertical comb actuator radio frequency (RF) micro-electro-mechanical system (MEMS) switch. The RF MEMS switch includes a substrate; first and second signal lines spaced at a predetermined interval from each other and deposited on an upper surface of the substrate; an actuator positioned over the first and second signal lines when viewed from the upper surface of the substrate and spaced at a predetermined interval from the first and second signal lines; and a fixing portion positioned over the actuator when viewed from the upper surface of the substrate, wherein the fixing portion permits the actuator to come in contact with the first and second signal lines when a predetermined driving voltage is applied. Thus, it is possible to prevent the actuator from sticking to the substrate. In addition, the RF MEMS switch can be operated with a low voltage and insertion loss and power loss can be reduced.

Abstract: A high-power PIN diode switch for use in applications such as plasma processing systems is described. One illustrative embodiment comprises an input terminal; an output terminal; and first and second transmission-line elements connected in parallel to the input and output terminals, each of the first and second transmission-line elements including a thermoconductive dielectric substrate and a microstrip line disposed on the thermoconductive dielectric substrate, the microstrip line including a plurality of substantially parallel sections that are magnetically coupled, electrically connected in series, and arranged so that electrical current flows in substantially the same direction in adjacent substantially parallel sections to mutually reinforce the magnetic fields associated with the adjacent substantially parallel sections.

Abstract: An RF switch (104) that is activated by the insertion of a connector. The RF switch (104) can comprise one or more antenna adapters that can be formed by a number of predetermined RF connector types. The RF switch can include a switch housing (204). A first, second, and third coaxial RF connectors (201, 202, 203) can be mounted to the switch housing (204). The first, second, and third coaxial RF connectors (201, 202, 203) can individually have both an inner and outer conductor (205-206; 207-208; 209-210, respectively). An actuator (501) can be movable from a first position to a second position responsive to a mechanical force applied to the third coaxial connector (203). A switch element (512) can be responsive to the actuator (501). When in the first position, the switch element (512) can exclusively form a conductive path between the first and second coaxial RF connectors (201, 202).

Abstract: Various embodiments are provided herein for a configurable high frequency coaxial switch. The switch includes a switch housing module that has at least two ports and is adapted for operation in a wide frequency band. The switch also includes at least one frequency-matching port component module that is configured to connect a transmission line to one of the ports of the switch housing module. The at least one frequency-matching port component module is also configured to provide a match to a desired frequency range. In use, the switch housing module together with the at least one frequency-matching port component module allow for operation of the configurable high frequency coaxial switch at the desired frequency range.

Abstract: A traveling-wave switch includes a FET-integrated Coplanar Waveguide (CPW) line structure. The FET-integrated CPW line structure incorporates a transistor, a signal line, and the ground, that can be used to eliminate the limitations imposed by the parasitic inductance of the prior art on the operation frequency of the switch. The signal line is connected directly to the drain of the transistor, eliminating the parasitic inductance caused by the connection wire between the signal line and the transistor. The source of the transistor is coupled directly to the ground of the coplanar waveguide line, thus eliminating the parasitic inductance between the transistor and ground, and raising the operation frequency of the switch.

Abstract: An RF assembly of a multiport switch is disclosed. The RF assembly includes an RF cavity housing and a cover. The RF cavity housing includes a common port defined by a cavity in a surface of the RF cavity housing and at least another port defined by a trough in the surface of the RF cavity housing. The trough is connected to the cavity. When covered by the cover, the trough defines a channel connected at one end to the cavity. The distance between opposing surfaces of the RF cavity housing and the cover at a proximal end of the channel is smaller than the corresponding distance of a portion of the channel immediately adjacent the proximal end. A multiport switch having the RF assembly is also disclosed.

Abstract: The present invention describes nano-scale fabrication technique used to create a sub-micron wide gap across the center conductor of a coplanar waveguide transmission line configured in a fixed-fixed beam arrangement, resulting in a pair of opposing cantilever beams that comprise an electro-mechanical switch. Accordingly, a nanometer-scale mechanical switch with very high switching speed and low actuation voltage has been developed. This switch is intended primarily for application in the RF/microwave/wireless industry.

Abstract: A redundant transition device between a waveguide (1) and at least two redundant processing circuits (2, 3) includes two uncoupled coplanar lines (5, 6) formed one on either side of a single substrate plate (4) and extending, in part at least, into the waveguide (1). Each coplanar line (5) has a longitudinal end (17) for connection to one (2) of the processing circuits, and a longitudinal transfer end (16), adapted to channel an electromagnetic wave between the waveguide and the slots (21, 22) of the coplanar line. Each coplanar line (5, 6) is provided with a phase shifting element (25, 26), for inverting the phase of an electric field on one side of the central transmission strip (7, 10) of the coplanar line.

Abstract: The present invention is a wide dynamic range antenna switch that, when disabled, has a stable input impedance over a wide power range. The wide dynamic range antenna switch includes multiple transistors, which are coupled in series, to provide a main signal path between an antenna connection and a radio connection. Direct current (DC) bias signals are provided to each of the transistors to ensure than when the antenna switch is disabled, the input impedance is stable. A control input, which may operate with low voltage control signals, enables or disables the antenna switch. The antenna switch may be coupled with other antenna switches in a communications system with multiple transceivers sharing a common antenna, and with a wide range of transmitter output power levels. Different embodiments of the present invention provide different DC bias circuit architectures.

Abstract: Disclosed are an RF MEMS switch and a fabrication method thereof. According to an embodiment the RF MEMS switch is actuated with a low voltage and a low consumption power by using a piezoelectric capacitor actuated by being converted to mechanical energy from electric energy when an electric field is applied to the piezoelectric capacitor. A cap substrate can be formed by using an etching method, a chemical mechanical polishing method, an electroplating method, etc., and the RF MEMS switch has a high reliability and a high yield.

Abstract: An integrated circuit is provided having a plurality of data transmitters, including a plurality of default data transmitters for transmitting data from a plurality of data sources and at least one redundancy data transmitter. A plurality of connection elements are provided having a first, low impedance connecting state and having a second, high impedance, disconnecting state. The connection elements are operable to disconnect a failing data transmitter from a corresponding output signal line and to connect the redundancy data transmitter to that output signal line in place of the failing data transmitter. In one preferred form, the connection elements include a fuse and an antifuse. In another form, the connection elements include micro-electromechanical (MEM) switches. The connecting elements preferably present the low impedance connecting state at frequencies which include signal switching frequencies above about 500 MHz.

Abstract: A DC to DC transmission system includes at least three conductors between a source and a sink, a first switch which alternately connects each conductor to the source, a second switch which alternately connects each conductor to the sink. The switches are synchronized such that one conductor is alternately coupled between the same polarity side of the source and sink and another conductor is alternately coupled between the other polarity side of the source and sink. The alternating connection between the conductors and source and sink may be undertaken at a wide range of frequencies.

Abstract: A method for fabricating a signal controller, e.g., a filter or a switch, for a coplanar waveguide during the LIGA fabrication process of the waveguide. Both patterns for the waveguide and patterns for the signal controllers are created on a mask. Radiation travels through the mask and reaches a photoresist layer on a substrate. The irradiated portions are removed and channels are formed on the substrate. A metal is filled into the channels to form the conductors of the waveguide and the signal controllers. Micromachined quasi-lumped elements are used alone or together as filters. The switch includes a comb drive, a spring, a metal plunger, and anchors.

Abstract: A circuit for guiding electromagnetic waves includes a substrate for supporting components of the circuit. The circuit includes a control device which includes a first conductive element on the substrate for connection to a first component of the circuit and a second conductive element on the substrate for connection to a second component. The control device is made up of a variable impedance switching material on the substrate which exhibits a bi-stable phase behavior. The compound has a variable impedance between a first impedance state value and a second impedance state value which can be varied by application of energy thereto to thereby affect the amplitude or phase delay of electromagnetic waves through the circuit.

Abstract: A micro electro-mechanical system (MEMS) switch and a method for manufacturing the same are provided. The MEMS switch includes a substrate; signal lines formed on the substrate; main electrodes spaced apart by a distance and formed over the substrate; an actuating beam installed above the main electrodes at a certain height; a support unit to support the actuating beam; and sub-electrodes formed above the actuating beam at a distance from the actuating beam and facing the corresponding main electrodes. The method includes depositing and patterning a metal layer on a substrate; depositing and patterning a sacrificial layer to form actuator beam support holes and first sub-electrode contact holes; depositing and patterning an actuating beam layer on the sacrificial layer, thereby forming spacers; depositing and patterning second sub-electrode contact holes from another sacrificial layer; depositing and patterning a sub-electrode layer on the sacrificial layer; and removing the two sacrificial layers.

Abstract: An RF MEMS switch having asymmetrical spring rigidity. The RF MEMS switch has supporting members spaced apart in a certain interval on a substrate, a membrane being a motion member suspended by plural spring members extended on both sides of the membrane, and a bottom electrode being a contact surface on an upper surface of the substrate facing a bottom surface of the membrane, wherein the plural spring members placed on opposite sides of the membrane have asymmetrical rigidity, and a portion of the membrane on a side of stronger spring rigidity is first separated from the contact surface when the RF MEMS switch is turned off. The present invention has an advantage of easy separation of the switch from the contact surface, when the switch is turned off, due to the different rigidity of the springs located on the sides of the membrane.

Abstract: It is to provide an MEMS switch easy to manufacture, microscopic, and capable of obtaining a sufficient ON/OFF capacitance change ratio. An MEMS switch includes a substrate 46, a conductive beam 42 formed on a surface of the substrate, and three-layer structure beams B1 and B2 formed on the surface of the substrate and disposed to be opposed to the conductive beam.

Abstract: A switch includes a first member, one end of which being secured to a substrate, multiple first beam portions respectively having multiple first contact portions, one ends of the multiple beam portions being secured to the first member, multiple contact switch portions connected in parallel, the multiple first contact portions and multiple second contact portions being in a contact state or in a non-contact state in the multiple contact switch portions, and resistors arranged respectively between the multiple contact switch portions and a common connection point to which the multiple contact switch portions are coupled. When at least one of the multiple switch portions is in a contact state, one of the resistors corresponding to the at least one of the multiple switch portions in a contact state has a resistance value greater than another one of the resistors corresponding to at least one of the multiple contact switch portions that is in a non-contact state.

Abstract: A micro-switching device includes a fixing portion, a movable portion, a first electrode with first and second contacts, a second electrode with a third contact contacting the first contact, and a third electrode with a fourth contact opposing the second contact. In manufacturing the micro-switching device., the first electrode is formed on a substrate, and a sacrifice layer is formed on the substrate to cover the first electrode. Then, a first recess and a shallower second recess are formed in the sacrifice layer at a position corresponding to the first electrode. The second electrode is formed to have a portion opposing the first electrode via the sacrifice layer, and to fill the first recess. The third electrode is formed to have a portion opposing the first electrode via the sacrifice layer; and to fill the second recess. Thereafter the sacrifice layer is removed.

Abstract: A MEM switch is described having a free moving element within in micro-cavity, and guided by at least one inductive element. The switch consists of an upper inductive coil; an optional lower inductive coil, each having a metallic core preferably made of permalloy; a micro-cavity; and a free-moving switching element preferably also made of magnetic material. Switching is achieved by passing a current through the upper coil, inducing a magnetic field in the coil element. The magnetic field attracts the free-moving magnetic element upwards, shorting two open wires and thus, closing the switch. When the current flow stops or is reversed, the free-moving magnetic element drops back by gravity to the bottom of the micro-cavity and the wires open. When the chip is not mounted with the correct orientation, gravity cannot be used. In such an instance, a lower coil becomes necessary to pull the free-moving switching element back and holding it at its original position.

Abstract: A tunable high impedance surface device (100) includes a conductive ground plane (105) and a plurality of conductive elements (110-114) electrically connected to the conductive ground plane (105). The device (100) also includes a plurality of capacitive elements (120-124) operable to vary a predetermined electromagnetic characteristic of the apparatus and standoffs (130, 132) between the plurality of capacitive elements (120-124) and the plurality of conductive elements (110-114). In one form, laser-drilled and electrically conductive micro-vias (136, 138) extend through the standoffs (130, 132) thereby electrically connecting the plurality of capacitive elements (120-124) to a data bus (140). The capacitive elements (120-124) may be integral with a circuit board (144) that supports the plurality conductive elements (110-114).

Abstract: An SPNT switch has at least two operating states and comprises N circuit branches. Each circuit branch comprises a first input/output port connected to a second input/output port via a series active device, and a phase shifting component connected in series with a shunt active device. When the shunt active device is in an on state, the reflection co-efficient due to a path to ground from the series active device via the phase shifting component and the shunt active device is +1. At least one DC terminal controls the state of the active devices, whereby in one of the operating states of the switch, both active devices are in the on state simultaneously, and in another of the operating states, both active devices are in an off state simultaneously.

Abstract: The systems and methods described herein provide for a radio frequency micro-electromechanical systems switch having two or more resonant frequencies. The switch can be configured as a capacitive shunt switch having a deflectable member coupled between two electrodes over a transmission line. A first insulator can be located between one of the electrodes and the deflectable member to form a capacitive element. The deflectable member can be deflectable between an up-state and a down-state, the down-state capacitively coupling the deflectable member with the transmission line. The degree by which the deflectable member overlaps the first insulator can be adjusted to adjust the capacitance of the capacitive element and the resulting resonant frequency.

Abstract: Provided is a high-isolation switching device for a millimeter-wave band control circuit. By optimizing a cell structure to improve the isolation of an off-state without deteriorating the insertion loss of an on-state, it is possible to implement a high-isolation switching device useful in the design and manufacture of a millimeter-wave band control circuit such as a phase shifter or digital attenuator using switching characteristics. In addition, when a switch microwave monolithic integrated circuit (MMIC) is designed to use the switching device, it is not necessary to use a multi-stage shunt field effect transistor (FET) to improve isolation, nor to dispose an additional ?/4 transformer transmission line, inductor or capacitor near the switching device. Thus, chip size can be reduced, degree of integration can be enhanced, and manufacturing yield can be increased. Consequently, it is possible to reduce manufacturing cost.

Abstract: The present invention provides a high-frequency switch including: a first switching element connected between a first input/output terminal and a second input/output terminal; a second switching element connected between the second input/output terminal and the first switching element; a high-frequency line provided between the first input/output terminal, the first switching element, and a third input/output terminal; and a third switching element connected between the third input/output terminal, the high-frequency line, and a ground. By connecting the first switching element, the second switching element, the high-frequency line, and the third switching element, because there exists no FET through which a large current flows when a state between the first input/output terminal and the third input/output terminal is set to a transmission state which requires high power handling capability, there is no need to use an FET having a large gate width, which is effective in reducing a loss of the switch.

Abstract: An electronic circuit is formed by closely spacing metallic gate and drain interconnects to a flexible portion of a source interconnect. A gate voltage results in electrostatic attraction and lateral mechanical movement of the flexible source interconnect portion and causes an electrical short between source and drain. VanderWaals attraction between contacting source and drain can be used to provide volatile switching (springy thicker source portion) and non-volatile switching (limp thinner source portion). In accordance with the invention, an easily fabricated, high speed, low power, radiation hard, temperature independent, integrated reconfigurable electronic circuit with embedded logic and non-volatile memory can be realized. The switch uses patterned interconnect material for its structure and can be incorporated to a 3D layered structure consisting of three dimensional interconnect in which different layers and portions of the circuits are linked through volatile and non-volatile switches.

Abstract: A method of manufacturing a micro-electromechanical device is provided. The method comprises providing a substrate incorporating drive circuitry, and forming a drive member, a motion-transmitting member and a working member on the substrate as discrete components. The drive member is formed to have an electrical circuit in electrical contact with the drive circuitry for receiving an electrical signal therefrom, a fixed end fast with the substrate and a free end arranged to be displaced relative to the substrate on receipt of the electrical signal by the electrical circuit. The motion-transmitting member is formed to be fast with the free end of the drive member so that the motion-transmitting member is displaced together with the free end. The working member is formed to be fast with the motion-transmitting member so that the working member is displaced with the motion-transmitting member to perform work.

Abstract: An electromechanical switch includes an actuation electrode, an anchor, a cantilever electrode, a contact, and signal lines. The actuation electrode and anchor are mounted to a substrate. The cantilever electrode is supported by the anchor above the actuation electrode. The contact is mounted to the cantilever electrode. The signal lines are positioned to form a closed circuit with the contact when an actuation voltage is applied between the actuation electrode and the cantilever electrode causing the cantilever electrode to bend towards the actuation electrode in a zipper like movement starting from a distal end of the cantilever electrode.

Abstract: A microstrip-to-microstrip RF transition circuit that employs a wide microstrip line transition to a short co-planar waveguide section. In one embodiment, a first microstrip line and a first ground plane are patterned on a top surface of a semiconductor wafer, and a second microstrip line and a second ground plane are patterned on a bottom surface of the wafer. A signal via is formed through the wafer and makes electrical contact with the first and second microstrip lines. Likewise, at least one ground via is formed through the wafer and makes electrical contact with the first and second ground planes. A widened portion of the microstrip line is positioned between extended portions of the respective ground plane so that a slot is provided between the widened portion and the extended portion.

Abstract: An electromechanical switch with a rigidified electrode includes an actuation electrode, a suspended electrode, a contact, and a signal line. The actuation electrode is disposed on a substrate. The suspended electrode is suspended proximate to the actuation electrode and includes a rigidification structure. The contact is mounted to the suspended electrode. The signal line is positioned proximate to the suspended electrode to form a closed circuit with the contact when an actuation voltage is applied between the actuation electrode and the suspended electrode.

Abstract: The width and location of a hysteresis window of an interferometric modulator may be altered by adjusting various physical characteristics of the interferometric modulator. Thus, depending on the particular application for which the interferometric modulators are manufactured, the width and location of the hysteresis window may be altered. For example, in some applications, reducing the power required to operate an array of interferometric modulators may be an important consideration. In other applications, the speed of the interferometric modulators may be of more importance, where the speed of an interferometric modulator, as used herein, refers to the speed of actuating and relaxing the moveable mirror. In other applications, the cost and ease of manufacturing may be of most importance. Systems and methods are introduced that allow selection of a width and location of a hysteresis window by adjusting various physical characteristics.

Abstract: RF switching system (100, 200) formed from a structure (102, 202) comprised of dielectric material. The structure can have two or more faces (104, 204), with at least one face located in a plane exclusive of at least a second one of the faces. For example, the structure can define a geometric shape that is a polyhedron. RF switches (106, 206) can be disposed on two or more of the faces. Conductive RF feed stubs (110, 210) are provided for each RF switch extending from an interconnection point (114, 214) to electrical contact terminals (116, 216) that are respectively connected to the RF switches. The interconnection point is located within the structure at a location generally medial to the two or more of terminals.

Abstract: The present invention relates to micro-electro-mechanical systems (MEMS). The present invention relates to a design feature that allows lower actuation voltage for electrostatically actuated structures (i.e., switches or mirrors). The present invention further relates to a method for fabricating such a design that allows lower actuation voltage.

Abstract: A micro-electromechanical device includes an actuation electrode and a suspended electrode. The actuation electrode is disposed on a substrate. The suspended electrode is suspended proximate to the actuation electrode. The suspended electrode includes support members and a plate member. Each of the support members is clamped at either end to the substrate via anchors and the plate member is supported by the support members. The support members are flexible in response to an actuation voltage that is applied between the actuation electrode and the suspended electrode to allow the suspended electrode to electrostatically pull towards the actuation electrode. A signal line is coupled to the suspended electrode.