Abstract: A digital variable capacitor package is provided as having a ground plane disposed on predetermined portion of the top surface of a substrate. An elongated signal electrode may also be disposed on the substrate and including a first end defining an input and a second end extending to a substantially central region of the top surface of the substrate. This elongated signal electrode is disposed to be electrically isolated from the ground plane. A number of elongated cantilevers are disposed on the substrate and each include first ends coupled to the second end of the signal electrode and each further include second ends suspended over different predetermined portions of the ground plane. In operation, one or more of the cantilevers may be actuated to move portion thereof into close proximity to the ground plane for providing one or more discrete capacitance values.

Abstract: A multiple switch MEMS structure has a higher resistance, higher durability switch arranged in parallel with a lower resistance, less durable switch. By closing the higher resistance, high durability switch before the lower resistance, less durable switch, the lower resistance, less durable switch is protected from voltage transients and arcing which may otherwise damage the lower resistance, less durable switch. By appropriate selection of dimensions and materials, the high resistance, high durability switch may be assured to close first, as well as open first, thereby also protecting the lower resistance, less durable switch from voltage transients upon opening as well as upon closing.

Abstract: The present invention provides a monolithic inductor developed using radio frequency micro electromechanical (RF MEMS) techniques. In a particular embodiment of the present invention, a tunable radio frequency microelectromechanical inductor includes a coplanar waveguide and at least one direct current actuatable contact switch positioned to vary the effective width of a narrow inductive section of the center conductor of the CPW line upon actuation the DC contact switch.

Abstract: An electromagnetic switch element that through electromechanical actuation is able to be used to influence the propagation of an electromagnetic signal within a guiding medium. An electromagnetic switch element that is activated by displacement of conducting elements, the displacement being forced through electrostatic, electric field, magnetic field, thermal or other means.

Abstract: An embodiment of the present invention provides an apparatus, comprising a radio frequency switch capable of using tunable dielectric capacitors as the switching element. The apparatus may further comprise a cross connector connecting a plurality of ports and wherein at least one of the tunable dielectric capacitors may placed between the cross connector at and least one port, thereby enabling impedance variations between the cross connector and the ports. Further, an embodiment of the present invention may provide at least one T connector between the cross connector and at least one of the plurality of ports, wherein at least one tunable dielectric capacitor may be associated with the T connector to vary the impedance in at least one node of the T connector.

Abstract: The systems and methods described herein provide for a radio frequency micro-electromechanical systems switch having two or more resonant frequencies. The switch can be configured as a capacitive shunt switch having a deflectable member coupled between two electrodes over a transmission line. A first insulator can be located between one of the electrodes and the deflectable member to form a capacitive element. The deflectable member can be deflectable between an up-state and a down-state, the down-state capacitively coupling the deflectable member with the transmission line. The degree by which the deflectable member overlaps the first insulator can be adjusted to adjust the capacitance of the capacitive element and the resulting resonant frequency.

Abstract: A circuit for guiding electromagnetic waves includes a substrate for supporting components of the circuit. The circuit includes a control device which includes a first conductive element on the substrate for connection to a first component of the circuit and a second conductive element on the substrate for connection to a second component. The control device is made up of a variable impedance switching material on the substrate which exhibits a bi-stable phase behavior. The compound has a variable impedance between a first impedance state value and a second impedance state value which can be varied by application of energy thereto to thereby affect the amplitude or phase delay of electromagnetic waves through the circuit.

Abstract: An impedance matching structure for a RF MEMS switch having at least one closeable RF contact in an RF line, the impedance matching structure comprising a protuberance in the RF line immediately adjacent the RF contact that forms one element of a capacitor, the other element of which is formed by the switch's ground plane.

Abstract: A micro electro mechanical system switch and a method of fabricating the same. The micro electro mechanical system switch includes a substrate a plurality of signal lines formed at sides an upper surface of the substrate and including switching contact points and a plurality of immovable electrodes on the upper surface of the substrate and between the plurality of signal lines. An inner actuating member performs a seesaw based on a center of the substrate and together with an outer actuating member. Pushing rods are formed at ends of an upper surface of the inner actuating member with ends protruding from and overlapping with an upper portion of the outer actuating member. Contacting members are formed on a lower surface of the outer actuating member so as to be pushed by the pushing rods and contacting the switching contact points of the signal lines.

Abstract: A planarized substrate structure for an electromechanical device comprising a substrate layer; a dielectric layer formed on the substrate layer, the dielectric layer formed with conductor spaces therein, the dielectric layer further including a dielectric top surface; and a conducting layer formed as a set of conductors in the conductor spaces of the dielectric layer, the conducting layer having a conducting layer top surface, and where the dielectric top surface and the conducting layer top surface are formed in a substantially co-planar fashion to provide a planarized substrate structure.

Abstract: A capacitive RF switch and DC RF switch include a fixed electrode having a thin layer of metal and at least one pull-down electrode. A moving plate has a plurality of corrugations and a selective finger design. The capacitive switch includes a selective finger that comes into contact with the fixed electrode so as to minimize the stiction between the moving plate and the fixed electrode when the switch is closed. The DC switch comprises a plurality of dimples that are formed on the selective portion of the moving plate and are positioned to come into contact with the fixed electrode when the switch is closed so as to increase the contact force and lower the resistance between the moving plate and fixed electrode.

Abstract: The present invention provides a transceiver circuit that includes a transmission amplifier coupled with an antenna input/output node. The transmission amplifier is configured to amplify communications to be transmitted from the transceiver circuit. The transceiver circuit further includes a receiver and a field effect transistor. The receiver includes a receiver input coupled with the antenna input/output node. The field effect transistor is coupled between the receiver input and an electrical reference. The field effect transistor is configured to provide an open circuit when communications are received at the receiver input and to provide a closed circuit when communications are not being received at the receiver input.

Abstract: Disclosed are an RF MEMS switch and a fabrication method thereof. The RF MEMS switch is actuated with a low voltage and a low consumption power by using a piezoelectric capacitor actuated by being converted to mechanical energy from electric energy when an electric field is applied to the piezoelectric capacitor. A cap substrate is formed by using an etching method, a chemical mechanical polishing method, an electroplating method, etc., and the RF MEMS switch has a high reliability and a high yield.

Abstract: The purpose of the present invention is to provide a small-sized switch attaining high isolation of not less than 80 dB, maintaining low insertion loss also in high frequencies not less than 60 GHz. A semiconductor switch according to the present invention utilizes FETs a gate electrode, a source electrode, and a drain electrode of each of which are formed on a semiconductor. The source electrode and the drain electrode are connected with the earth as well as are disposed in parallel to each other, and the gate electrode is formed between the source electrode and the drain electrode, and both the ends of the gate electrode are connected to the first input-output terminal 1 and the second input-output terminal.

Abstract: A MEMS switch includes a micro-machined monolithic layer (122) having, a seesaw (52), a pair of torsion bars (66a, 66b), and a frame (64). The frame (64) supports the seesaw (52) for rotation about an axis (68) established by the torsion bars (66a, 66b). Shorting bars (58a, 58b) at ends of the seesaw (52) connect across pairs of switch contacts (56a1, 56a2, 56b1, 56b2) carried on a substrate (174) bonded to one surface of the layer (122). A base (104) is also joined to a surface of the layer (122) opposite the substrate (174). The substrate (174) carries electrodes (54a, 54b) for applying forces to the seesaw (52) urging it to rotate about the axis (68). An electrical contact island (152) supported at a free end of a cantilever (166) ensures good electrical conduction between ground plates (162a, 162b) on the layer (122) and electrical conductors on the substrate (174).

Abstract: Systems and methods are provided that facilitate the formation of micro-mechanical structures and related systems on a laminated substrate. More particularly, a micro-mechanical device and a three-dimensional multiple frequency antenna are provided for in which the micro-mechanical device and antenna, as well as additional components, can be fabricated together concurrently on the same laminated substrate. The fabrication process includes a low temperature deposition process allowing for deposition of an insulator material at a temperature below the maximum operating temperature of the laminated substrate, as well as a planarization process allowing for the molding and planarizing of a polymer layer to be used as a form for a micro-mechanical device.

Abstract: A single-pole double-throw switch comprises an input line portion and two output line portions connected to the input line portion at a branch point and defining with the input line portion two propagation channels for electromagnetic signals reaching the branch point via the input line portion. Each output line portion includes a two-state electronic component constituting either a substantially open circuit or a substantially short circuit as a function of the application of an appropriate command and being in one of these two states in the absence of a command. The two identical electronic components are each disposed in series in or in parallel with one of the two output line portions.

Abstract: In a seesaw-type MEMS switch for radio frequency (RF) and a method for manufacturing the same, the seesaw-type MEMS switch for radio frequency (RF) includes a substrate, a transmission line formed on the substrate having a gap therein to provide a circuit open condition, an intermittent part formed a predetermined distance from the substrate, the intermittent part being operable to contact the transmission line on both sides of the gap by performing a seesaw movement about a seesaw movement axis, and a driving part to drive the seesaw movement of the intermittent part in response to a driving signal.

Abstract: A circuit for guiding electromagnetic waves includes a substrate for supporting components of the circuit. The circuit includes a control device which includes a first conductive element on the substrate for connection to a first component of the circuit and a second conductive element on the substrate for connection to a second component. The control device is made up of a variable impedance switching material on the substrate which exhibits a bi-stable phase behavior. The compound has a variable impedance between a first impedance state value and a second impedance state value which can be varied by application of energy thereto to thereby affect the amplitude or phase delay of electromagnetic waves through the circuit.

Abstract: A phased-array antenna system and other types of radio frequency (RF) devices and systems using microelectromechanical switches (“MEMS”) and low-temperature co-fired ceramic (“LTCC”) technology and a method of fabricating such phased-array antenna system and other types of radio frequency (RF) devices are disclosed. Each antenna or other type of device includes at least two multilayer ceramic modules and a MEMS device fabricated on one of the modules. Once fabrication of the MEMS device is completed, the two ceramic modules are bonded together, hermetically sealing the MEMS device, as well as allowing electrical connections between all device layers. The bottom ceramic module has also cavities at the backside for mounting integrated circuits. The internal layers are formed using conducting, resistive and high-k dielectric pastes available in standard LTCC fabrication and low-loss dielectric LTCC tape materials.

Abstract: According to one embodiment a microelectromechanical (MEMS) switch is disclosed. The MEMS switch includes a substrate, a bottom electrode mounted on the substrate, a top electrode mounted on the bottom electrode, an actuation electrode mounted on the substrate and a resistor coupled to the actuation electrode. The resistor prevents self-actuation at the actuation electrode whenever the switch is open.

Abstract: A high isolation RF switch for launching a selected one of two RF signals into a slabline transmission line structure has a three switch configuration—a pair of input switches coupled to corresponding input ports and a transition switch coupled to an output port via a slabline transmission line. The input switches select one of the input ports for coupling to the transition switch, and the transition switch couples the selected input port from the input switches to the output port. A grounded conductor is situated between the input ports in a cavity of a housing within which the high isolation RF switch is located to provide isolation between the input ports. Additional isolation between the input ports is provided by coupling the non-selected RF signal to ground, either by grounding the non-selected input to the transition switch or the non-selected input port.

Abstract: A micro electromechanical switchable capacitor is disclosed, comprising a substrate, a bottom electrode, a dielectric layer deposited on at least part of said bottom electrode, a conductive floating electrode deposited on at least part of said dielectric layer, an armature positioned proximate to the floating electrode and a first actuation area in order to stabilize the down state position of the armature. The device may furthermore comprise a second actuation area. The present invention provides shunt switches and series switches with actuation in zones attached to the floating electrode area or with relay actuation.

Abstract: A high frequency switch includes a main line electrode arranged on a substrate so as to extend between two terminals, a short stub line electrode on the substrate of which one end is connected to a one-side edge of the main line electrode, and the other end is grounded, an open stub line electrode on the substrate of which one end is connected to the other-side edge of the main line which is opposed to the one-side edge, and the other terminal is opened, ground electrodes arranged on the substrate adjacent to the short stub line electrode and the open stub line electrode in the width direction thereof, a semiconductor activation layer disposed in a portion of the substrate between the side edge at least on the one-end side of the open stub line electrode and the ground electrode so as to extend under the open stub line electrode and under the ground electrode, and a gate electrode disposed on the semiconductor activation layer between the open stub line electrode and the ground electrode so as to extend along

Abstract: Disclosed is a switch having a movable electrode to be separately driven downward and upward to secure signal transmission efficiency and insulation capability and operate for signal connection and disconnect at a high speed. The switch comprises a movable electrode, a fixed electrode positioned beneath the movable electrode, and a movable electrode driving fixed electrode positioned on both sides of the movable electrode with respect to a length wise direction thereof. Inside surfaces of the movable electrode, concave and convex parts are formed to arrange on both sides fixed electrodes having the corresponding concave and convex parts with a space.

Abstract: A first diode is connected in series to a transmission port, and a low pass filter having transmission band and reception band as passing band is disposed between the first diode and an antenna port. A second diode is connected between the reception port and the ground. A phase shifting function is provided between the first diode and a reception port, having reception band as passing band, so that the impedance as seen from the first diode to the reception port side is almost open in the transmission band when a current flows in the second diode.

Abstract: A passive interface circuit for coupling an output signal from a power amplifier to a load is disclosed. The interface presents an impedance to the power amplifier that increases as the power level in the output signal decreases. In one embodiment, the interface circuit includes a fixed network and a capacitor having a capacitance that varies with the potential across the capacitor. The fixed network couples the output signal to the load. The capacitor is connected in parallel with the load and has a capacitance that increases in response to an increase in potential across the capacitor. The capacitor is preferably a MEM capacitor having plates that move with respect to one another in response to changes in the average potential difference between the plates.

Abstract: A military special operations forces communications assisting, ruggedized, manually operated coaxial antenna A/B switch especially suited for mounting directly on the input/output port connector of a wide band transceiver radio apparatus or for alternate use as a tether-connected switch. The switch includes multi-switch stacking capability, weather and rough usage adaptability, detented operation, accidental position change protection, gloved hand operation and desirable electrical characteristics. Use of the switch in single or multi switch arrangements under darkened and time-limited battlefield conditions to change between differing antennas used with a military mission transceiver radio transceiver is possible.

Abstract: To realize high pressure-tightness and improvement in a high-frequency characteristic due to a low impedance between a shunt FET and a ground of a FET switch circuit. An antenna switch module comprising a switch circuit for switching between transmitting and receiving of a signal between an antenna and a transmitting portion and/or a receiving portion and having a shunt circuit, wherein a capacitor of the shunt circuit of the switch circuit is provided to a dielectric layered body, and remaining elements of the switch circuit are provided to semiconductor chips mounted on the dielectric layered body.

Abstract: This application discloses a microelectromechanical (MEMS) switch apparatus comprising an anchor attached to a substrate and an electrically conductive beam attached to the anchor and in electrical contact therewith. The beam comprises a tapered portion having a proximal end and a distal end, the proximal end being attached to the anchor, an actuation portion attached to the distal end of the tapered portion, a tip attached to the actuation portion, the tip having a contact dimple thereon. The switch apparatus also includes an actuation electrode attached to the substrate and positioned between the actuation portion and the substrate. Additional embodiments are also described and claimed.

Abstract: An RF switch includes first and second diodes characterized by an intrinsic region. Pin diodes and nip diodes are examples of such diodes with intrinsic regions. The diodes are stacked with facing first connections. A bias conductor extends from the first connections.

Abstract: The present invention provides a small, thin filter circuit showing a desired filter characteristic which is highly accurate, and producible with a high efficiency. The filter circuit includes a pair of dielectric insulating layers 2 and 3, upper and lower, each having a ground pattern 11 (16) formed on the main side thereof, and an inner wiring layer 4 formed between the dielectric insulating layers 2 and 3 and having capacitively coupled resonator conductive patterns 6 and 7 each connected at one end thereof to the ground patterns 11 and 16 via inter-layer connecting vias 12 and open-circuited at the other end.

Abstract: Provided is a microelectro mechanical system (MEMS). The provided MEMS switch includes a substrate; a signal line formed on the substrate; a beam deformed by an electrostatic force to electrically switch with the signal line; and a spring type contact unit formed on the signal line to electrically contact the beam and elastically deformed by an external force. Thus, stability of the contact between the contact unit and the beam is improved. In particular, even when the beam or the contact unit under the beam is unbalanced, the contact unit can elastically contact the beam to obtain a stable electrical switching operation.

Abstract: A circuit for guiding electromagnetic waves includes a substrate for supporting components of the circuit. The circuit includes a control device which includes a first conductive element on the substrate for connection to a first component of the circuit and a second conductive element on the substrate for connection to a second component. The control device is made up of a variable impedance switching material on the substrate which exhibits a bi-stable phase behavior. The compound has a variable impedance between a first impedance state value and a second impedance state value which can be varied by application of energy thereto to thereby affect the amplitude or phase delay of electromagnetic waves through the circuit.

Abstract: As the basic building block of microwave and millimeter wave units and circuits, the microwave switch must fulfill several requirements including low insertion loss, high isolation and small dimensions. For conventional electrostatically actuated microwave MEMS switches, the isolation between DC and RF is achieved using an RF choke. In this invention, a miniature electrostatically actuated microwave switch with a cantilever and employing two resistive lines on a first substrate and act as the actuation electrodes is provided. The resistive lines as the actuation electrodes according to this invention allows one to minimize the switch dimensions, to facilitate the integration and minimize the interference of the propagating microwave or millimeter wave signals.

Abstract: In a switching scheme mechanical MEMs switches are connected in parallel with solid state switches. This parallel MEMS/solid-state switch arrangement takes advantage of the fast switching speeds of the solid state switches as well advantage of the improved insertion loss and isolation characteristics of the MEMS switches. The solid-state switches only need to be energized during a ramp up/down period associated with the slower MEMs switch thus conserving power. As an additional advantage, using a solid-state switch in parallel with MEMs switches improves the transient spectrum of the system during switching operations.

Abstract: A PIN diode switching system is provided, particularly for the transmission stage of a mobile radio telephone, in which, when the PIN diode switching system is in a reverse-bias state, a PIN diode is isolated from its power supply via a high-impedance switch and is, thus, biased by its self-rectification to a radio-frequency voltage in order to suppress harmonic formation and radio-frequency attenuation.

Abstract: A frequency switch is configured with two FET switches. One end of a second FET switch is connected between an I/O port and a reception port and the other end is ground. A strip line is connected between the second FET switch and the I/O port, and has an electrical length equivalent to ¼ wavelength of a high frequency signal input from transmission port.

Abstract: A transmission line structure includes first and second mutually separated strip conductors lying on an upper side of an upper dielectric sheet, and a ground conductor juxtaposed with the lower side of the upper dielectric sheet. A further strip conductor lies on a lower side of a lower dielectric sheet, with its ends registered with the ends of the first and second strip conductors. A gap in the further strip conductor is controllably bridged by a MEMS switch element, which may lie below the second dielectric sheet or in a cavity defined in the second dielectric sheet.

Abstract: A balanced line switching apparatus that provides high isolation at an expense of a marginal increase of loss. Practical implementation can give as much as 40 dB isolation in a single stage.

Abstract: A switching system includes a first transistor having a first gate and coupled between a first terminal and a second terminal and a second transistor having a second gate and coupled between the second terminal and a third terminal. The first transistor and the second transistor are configured to conduct a signal current between the first terminal and the third terminal. An impedance component coupled to the first gate and the second gate is configured to isolate a first gate signal voltage at the first gate or isolate a second gate signal voltage at the second gate to reduce a distortion of the signal current.

Abstract: A capacitor with alterable capacitance for changing the impedance of a section of a coplanar waveguide, which may be used in particular as a high-frequency microswitch, is provided. A ground lead and a signal lead interrupted by an electroconductive connection which is self-supporting at least in some areas are provided, the capacitor including the electroconductive connection and an additional electroconductive connection connected to the ground lead. A structure connected to the electroconductive connection is provided, which is designed in such a manner that it reduces mechanical stresses which occurs in the electroconductive connection. An exemplary embodiment of the device provides for the electroconductive connection to be made of a material having coefficients of thermal expansion similar to that of silicon and a high modulus of elasticity compared to metals, in particular of molybdenum, tantalum or tungsten. The two exemplary embodiments may be combined.

Abstract: A microelectromechanical system (MEMS) switch having a high-resonance-frequency beam is disclosed. The MEMS switch includes first and second spaced apart electrical contacts, and an actuating electrode. The beam is adapted to establish contact between the electrodes via electrostatic deflection of the beam as induced by the actuating electrode. The beam may have a cantilever or bridge structure, and may be hollow or otherwise shaped to have a high resonant frequency. Methods of forming the high-speed MEMS switch are also disclosed.

Abstract: A micro electromechanical system (MEMS) switch (10) includes a substrate (12) and a stress free beam (14) disposed above the substrate (12). The stress free beam (14) is provided within first and second platforms (16, 18) to limit displacement of the stress free beam (14) in directions that are not substantially parallel to the substrate (12). A set of one or more control pads (20) is disposed in a vicinity of a first lengthwise side (22) of the stress free beam (14) for creating a potential on the first lengthwise side (22) of the stress free beam (14). The stress free beam (14) is displaceable in directions substantially parallel to the substrate (12) in accordance with the potential for providing a signal path.

Abstract: MEMS Device Having Contact and Standoff Bumps and Related Methods. According to one embodiment, a movable MEMS component suspended over a substrate is provided. The component can include a structural layer having a movable electrode separated from a substrate by a gap. The component can also include at least one standoff bump attached to the structural layer and extending into the gap for preventing contact of the movable electrode with conductive material when the component moves.

Abstract: A high-frequency switch comprises: a substrate; a main line electrode provided between two terminals; a stub line electrode with one end thereof connected to the side edge of the main line electrode and the other end thereof grounded; and a ground electrode provided adjacent to the stub line electrode in the width direction thereof; wherein the substrate has a semiconductor activation layer which extends to below the stub line electrode and the ground electrode between at least one side edge of the stub line electrode and the ground electrode; and wherein a gate electrode which extends in the longitudinal direction of the stub line electrode is provided on the semiconductor activation layer between the stub line electrode and the ground electrode, thereby forming an FET structure, thus providing a high-frequency switch and electronic device therewith, capable of using high frequencies, having reduced insertion loss, and high signal cut-off capabilities.

Abstract: An RF switch useable up to millimeter wave frequencies and higher frequencies of 30 GHz and above. Four embodiments of the invention are configured as ground switches. Two of the ground switch embodiments are configured with a planar air bridge. Both of these embodiments are configured so that the bridge length is shortened between the transmission line and ground by introducing grounded stops. The other two ground switch embodiments include an elevated metal seesaw. In these embodiments, a shortened path to ground is provided with relatively low inductance by proper sizing and positioning of the seesaw structure. Lastly, broadband power switch embodiment is configured to utilize only a small portion of the air bridge to carry the signal. The relatively short path length results in a relatively low inductance and resistance lowers the RF power loss of the switch, thereby increasing the RF power handling capability of the switch.

Abstract: A mesoscale microelectromechanical system (MEMS) package for a micro-machine. The mesoscale micro-machine is formed on a printed circuit board (10) at the same time and of the same materials as the mesoscale micro-machine package. Both the micro-machine and the package have a first metal layer (12, 16), an insulating member (22, 26) formed on the first metal layer, and a second metal layer (32, 36) situated on the insulating layer. The package consists of a perimeter wall surrounding the micro-machine and a low-flow capping adhesive layer (40). The first metal layers of both the micro-machine and the package are formed in the same process sequence, and the insulating layers of both the micro-machine and the package are formed in the same process sequence, and the second metal layers of both the micro-machine and the package are formed in the same process sequence. The low-flow capping adhesive secures an optional cover (46) on the package to provide an environmental seal.

Abstract: A charge control circuit for controlling a micro-electromechanical device having a variable capacitance is disclosed. In one embodiment, a charge storage device is configured to store a charge amount. A switch circuit is configured to control the variable capacitance of the micro-electromechanical device by sharing the charge amount between the charge storage device and the micro-electromechanical device to equalize the charge storage device and the micro-electromechanical device to a same voltage.

Abstract: Posts are disposed at the surroundings of an FET and a shield metal supported by the posts is placed above the FET to create a void between the FET and the shield metal. Since the separation between the FET and the shield metal is small, the resin does not enter the void. A resin layer cover the shield metal. The shield metal is connected to an electrode pad that receives a DC control signal. Although high frequency signals that are applied to the FET may leak between the source and drain electrodes of the FET through the resin layer covering the FET even when the FET is switched off, the void and the shield metal prevent such signal leakage.