Abstract: An optical adjustment apparatus includes a measurement-light irradiation part that has a plurality of second optical fibers and emits, with timings different from each other, a plurality of lights having a single wavelength via the second optical fibers, an optical fiber block that holds exit-side end portions of the first and second optical fibers, a light detection part that receives and detects a plurality of reflected lights via the second optical fibers, a tilt calculation part that compares, with each other, variations with time of intensities of the respective reflected lights and calculates a tilt of the optical fiber block relative to the optical substrate, and a distance calculation part that calculates an inter-end surface distance between the optical substrate and the optical fiber block, based on a variation with time of an intensity of at least one reflected light.

Abstract: A test cell useful for determining the photosensitivity of a photopolymerizable material, includes a support plate having a top surface portion, a bottom surface portion, and an opening extending therebetween, a light-transmissive base member removably or permanently connected to said bottom surface portion to form with said opening a well, into which well photopolymerizable material can be deposited, and a sensor comprising a thermal sensor, strain sensor, or combination thereof operatively associated with said light-transmissive base member.

Abstract: Provided are a method for preparing a high-performance wafer-level lead sulfide near infrared photosensitive thin film. Firstly, a surface of the selected substrate material is cleaned; next, a vaporized oxidant is introduced into a vacuum evaporation chamber under a high background vacuum degree, and a PbS thin film is deposited on the clean substrate surface to obtain a microstructure with medium particle, loose structure and consistent orientation. Finally, under a given temperature and pressure, a high-performance wafer-level PbS photosensitive thin film is obtained by sensitizing the film prepared at step S2 using iodine vapor carried by a carrier gas. This preparation method is simple, low-cost and repeatable. The PbS photosensitive thin film has a high photoelectric detection rate. The 600K blackbody room temperature peak detection rate is >8×1010 Jones.

Abstract: A thermoanalytical sensor has a substrate, a measurement position, a temperature sensor unit, and an electrical contact pad. The temperature sensor unit senses the temperature at the measurement position. It is connected via the electrical contact pad to a metallic wire and thereby tied into an electronic circuit. The substrate is prepared with at least one measurement position, at least one temperature sensor unit and at least one electrical contact pad on a top side of the substrate. A passage in the substrate allows connection to the electrical contact pad. A metallic wire is inserted into the passage from the bottom side of the substrate and melted into a small ball on the upper end of the wire. A materially integral connection as a bonded joint between the upper end of the metallic wire and the electrical contact pad is made by applying pressure and heat to the metal ball.

Abstract: The infrared detecting element has a first base plate that has a first front surface, a first back surface, a first recessed portion, and an infrared detecting section for detecting infrared rays provided in an area of the first front surface that opposes the first recessed portion; a second base plate that has a second front surface, a second back surface on the opposite side of the second front surface, and a second recessed portion provided in an area of the second back surface that faces the first recessed portion; and an adhesion film that bonds the first back surface and the second back surface, wherein a second outer peripheral portion where the second recessed portion intersects with the second back surface surrounds a first outer peripheral portion where the first recessed portion intersects with the first back surface.

Abstract: An electrical calibrated radiometer includes a base, a suspension unit extending from the base, and a first heat measuring unit and a second heat measuring unit formed in the base. By applying a known voltage to the first heat measuring unit, the first heat measuring unit could serve as a thermal background for the second heat measuring unit, and an absolute temperature of a heat source could be determined with high precision from output voltages of the second heat measuring unit.

Abstract: A spectrometer system for providing information about a target with terahertz radiation. The system may receive incident radiation from the target through fore optics, a slit aperture, secondary optics and a dispersive element which images a slit on an array of terahertz sensitive detectors. The detectors may include uncooled sensors. Each sensor may be connected to its own micro antenna. The array of detectors may be situated proximate to the dispersive element so that radiation from the element may be dispersed according to wavelength to the respective detectors optimally sensitive to the various respective wavelengths. Detector signals indicating the impingement of terahertz radiation may provide information for identifying a material of the target.

Abstract: A method and device for measuring the soot load in the exhaust gas systems of diesel engines using a sensor which is mounted downstream of a particulate filter and comprises a sensor element, to measure the operability of the particulate filter. According to the method, the soot load of the sensor element is measured resistively or capacitively using electrodes. The measuring voltage of the sensor element is controlled depending on at least one actual operating parameter of the diesel engine.

Abstract: A chalcogenide glass radiation sensor comprising a chalcogenide glass layer coupled to at least two electrodes and a metal source, and a method using the same are disclosed. The chalcogenide glass layer has a resistivity and the at least two electrodes are configured to facilitate the measurement of the resistivity of the chalcogenide glass layer. The coupling of the metal source and the chalcogenide glass layer is such that the resistivity of the chalcogenide glass layer changes upon exposure to ionizing radiation. The metal source is configured to be external to an electric field that may form between the at least two electrodes as the resistivity of the chalcogenide glass layer is measured.

Abstract: A resistive element which includes an element body that contains, as its main constituent, an oxide conductor represented by RBaMn2O6 (wherein R is at least one selected from among Nd, Sm, Eu, Gd, Tb, Dy, Ho, and Y) and which has a negative temperature coefficient; and a pair of electrodes for applying an electric field to a surface layer section of the element body. When the resistive element is used in, for example, an infrared light sensor, infrared light is detected in such a way that measures an electric current flowing through the element body, which is correlated with the resistance of the element body, when an electric field with an electric field intensity of 100 V/cm or more is applied to the element body.

Abstract: A resistive material for a bolometer, a bolometer for an infrared detector using the material, and a method of manufacturing the bolometer are provided. In the resistive material, at least one element selected from the group consisting of nitrogen (N), oxygen (O) and germanium (Ge) is included in antimony (Sb). The resistive material has superior properties such as high temperature coefficient of resistance (TCR), low resistivity, a low noise constant, and is easily formed in a thin film structure by sputtering typically used in a complementary metal-oxide semiconductor (CMOS) process, so that it can be used as a resistor for the bolometer for an uncooled infrared detector, and thus provide the infrared detector with superior temperature precision.

Abstract: Single crystal SiC at least 200 micrometers thick is employed to detect electromagnetic radiation having a wavelength less than about 10 micrometers via an acoustic absorption mechanism. Applications include IR radiation sensing, contactless temperature sensing and an IR controlled varistor.

Abstract: A thin film made of a cobalt-based oxide represented by YBaCo2O5.5+x (−0.5<x<0.05) is used as a resistor material for a bolometer. Provided is also an infrared sensor having a microbridge structure and using the cobalt-based oxide thin film. The temperature coefficient of the electric resistance thereof can be made large.

Abstract: Single crystal SiC at least 200 micrometers thick is employed to detect electromagnetic radiation having a wavelength less than about 10 micrometers via an acoustic absorption mechanism. Applications include IR radiation sensing, contactless temperature sensing and an IR controlled varistor.

Abstract: An infrared array sensor having an array of infrared sensors of different plural types for detecting infrared rays of different plural wavelength bands. Each sensor includes a diaphragm separated from a substrate by a thermally insulating cavity. The heighths of one of the diaphragm and the cavity are different in each of the plural types of sensors.

Abstract: An integrated infrared and millimeter-wave monolithic focal plane sensor array having a substrate upon which an integrated array of infrared sensors and mm-wave sensors are provided at a first planar level on the same side of the substrate, and a planar antenna for receiving incident millimeter-wave radiation located at a second planar level located between the integrated array of sensors and the surface of the substrates for coupling the mm-wave radiation field to the mm-wave sensor. The antenna receiver of electromagnetic radiation, in one embodiment, is an antenna having a crossed bowtie configuration which efficiently couples the radiation field to the mm-wave sensor. The invention also is directed to a method of fabricating such a radiation sensor.

Abstract: A radiation sensor. The inventive sensor has a two-level detector structure formed on a substrate in which a thermal detector element is suspended over the substrate as a microbridge structure. A receiver of electromagnetic radiation is provided on the same side of the substrate in a manner that efficiently couples the radiation field to the thermal detector element. The thermal detector element has a sandwich structure including a heater metal layer, a dielectric layer, and a thin film thermo-resistive material. The thermal detector element is suspended out of physical contact with the receiver. In one embodiment, the receiver is an antenna having a crossed bowtie configuration that efficiently couples the radiation field to the detector element. The inventive radiation sensors are especially useful for mm-wave and microwave sensing applications. The sensor can be used individually or in linear or two-dimensional arrays thereof.

Abstract: A fast photon detector with high energy and position resolution, which may be used in the infrared, ultraviolet, EUV, and X-ray ranges includes an absorber, a thermoelectric sensor, a heat sink, all disposed on a dielectric substrate. An absorber receives a photon and transforms the energy of the photon into a change in temperature within the absorber. A thermoelectric sensor is thermally coupled to the absorber. When the absorber receives the photon, the energy of the photon is very quickly transformed into a time dependent temperature difference across the sensor. A heat sink is thermally coupled to the sensor, to maintain the heat flow across the sensor. The absorber, sensor, and heat sink are disposed upon a dielectric substrate, such that the heat transfer from the sensor to the dielectric substrate is much slower than the signal duration.

Abstract: A structure for temperature sensors and infrared detectors. The structure is built-up on a substrate that includes a thermistor layer, wherein the resistance of the thermistor layer is temperature dependent. The substrate also includes an electric contact layer on both sides of the thermistor layer, and the resistance of the thermistor layer is measured between the contact layers. The thermistor layer includes a monocrystalline quantum well structure that includes alternating quantum well layers and barrier layers. One or more of the bandedge energy of the barrier layers, the quantum well layer doping level, the quantum well layer thickness, and the barrier layer thickness is adapted to obtain a temperature coefficient predetermined for the structure.

Abstract: An infrared photosensitive area is constituted by an infrared ray absorbing part that is heated by infrared rays, a thermal detector that detects the temperature change of the infrared ray absorbing part, and electrodes that are electrically connected to the thermal detector. The infrared photosensitive area is held up above one surface of a substrate by supports. The electrodes of the infrared photosensitive area are electrically connected to contact pads on the substrate by wiring material that constitutes the support. A shield projects from portions of the infrared ray absorbing part other than portions that correspond to the electrodes. The contact pads of the substrate and the surfaces of the electrodes and the supports that are directed away from the substrate are covered by the shield with an interposed space. This configuration enables an increase in the fill factor of the picture elements of the thermal infrared detector and enables greater absorption of infrared light.

Abstract: SiC, preferably in single crystal form, is employed as an IR radiation sensor with high temperature and power capabilities. Applications include sensing the power or energy from an IR radiation source, a contactless temperature sensor for another body heated by IR radiation, and an IR controlled varistor.

Abstract: A infra-red bolometer includes an active matrix level, a support level, a pair of posts and an absorption level. The active matrix level includes a substrate having a pair of connecting terminals. The support level includes a pair of bridges, each of the bridges being provided with a conduction line formed on top thereof, wherein one end of the conduction line is electrically connected to the respective connecting terminal. The absorption level includes a serpentine bolometer element surrounded by an absorber and a serpentine stress balancing member formed at bottom of the absorber. The serpentine stress balancing member has an identical shape, a same material and rotated 90° with respect to the serpentine bolometer element to make the compressive stress in the absorber evenly distributed, preventing the absorber from being bent to thereby allow the bolometer to ensure an optimum absorption efficiency.

Abstract: A three-level infra-red bolometer includes an active matrix level, a support level, a pair of posts and an absorption level. The active matrix level includes a substrate having an integrated circuit, a pair of connecting terminals and a protective layer covering the substrate. The support level includes a pair of bridges, each of the bridges being provided with a conduction line formed on top thereof, wherein one end of the conduction line is electrically connected to the respective connecting terminal. The absorption level includes a serpentine bolometer element surrounded by an absorber made of silicon oxide (SiO2) or silicon oxy-nitride (SiOxNy). Each of the posts includes an electrical conduit surrounded by an insulating material and is placed between the absorption level and the bridge, in such a way that the serpentine bolometer element is electrically connected to the integrated circuit through the electrical conduit, the conduction line and the connecting terminal.

Abstract: A infra-red bolometer includes an active matrix level, a support level, a pair of posts and an absorption level. The active matrix level includes a substrate having a pair of connecting terminals. The support level includes a pair of bridges, each of the bridges being provided with a conduction line formed on top thereof, wherein one end of the conduction line is electrically connected to the respective connecting terminal. The absorption level includes an absorber with a reflective layer positioned at bottom surface thereof, a serpentine bolometer element surrounded by the absorber and an IR absorber coating formed top of the absorber. Since the reflective layer is attached at the bottom surface of the absorber, which will, in turn, eliminate the need for controlling the vertical distance between the absorption level and the active matrix level.

Abstract: A two level microbridge infrared thermal detector having an upper detector planar section (a) comprising a temperature responsive detector of an oxide of vanadium having a high TCR and a resistivity in the range of 20K ohms to 50K ohms per square sheet resistance, and (b) being supported above a lower section by leg portions of an oxide of vanadium having a resistivity of approximately 500 ohms per square sheet resistance.

Abstract: A high responsivity thermochromic infrared detector which has an operating temperature that is established on the steepest part of the phase transition curve and is maintained there while the infrared detector is operated.

Abstract: The inventive three-level infrared bolometer includes an active matrix level, a support level, a pair of post and a absorption level. The active matrix level includes a substrate having an integrated circuit, a pair of connecting terminal and a protective layer covering the substrate. The support level includes a pair of bridges, each of the bridges being provided with a conduction line formed on top thereof, wherein one end of the conduction line is electrically connected to the respective connecting terminal. The absorption level includes a serpentine bolometer element surrounded by an absorber, and an infrared absorber coating formed on the absorber and having a rough surface. Each of posts includes an electrical conduit surrounded by an insulating material and is placed between the absorption level and the bridge, in such a way that the serpentine bolometer element is electrically connected to the integrated circuit through the electrical conduit, the conduction line and the connecting terminal.

Abstract: A thermally sensitive element is manufactured as follows: a carbonized sheet material is prepared by carbonizing an aramid film at a low temperature; a conductive layer made of carbon ink is formed on the surface of the carbonized sheet material; and a pair of extraction electrodes made of a thin metallic film are provided on the reverse surface of the carbonized sheet material. For applying the thermally sensitive element to a radiation sensor, the conductive layer is arranged to receive radiant rays from the outside, and terminals are connected to the extraction electrodes.

Abstract: In a method of manufacturing a thermal-type infrared sensor including a thermosensitive part, a bolometer material is formed as the thermosensitive part and is subjected to post-processing to control a temperature coefficient of resistance in the bolometer material. The bolometer material may be formed by titanium or vanadium.

Abstract: A three-level infrared bolometer including an active matrix level, a support level, posts and an absorption level. The active matrix level includes a substrate having an integrated circuit, connecting terminals and a protective layer covering the substrate. The support level includes bridges, each of the bridges being provided with a conduction line formed on top thereof, wherein one end of the conduction line is electrically connected to the respective connecting terminal. The absorption level includes an absorber, a bolometer element surrounded by the absorber, a titanium thin film on top of the absorber, and an infrared absorber coating made of silicon oxy-nitride and formed on top of the titanium thin film, the infrared absorber coating having multipores therein and a rough top surface as a result of the titanium film surface not providing enough nucleation sites for it to grow stably.

Abstract: A high responsivity thermochromic infrared detector which has an operating temperature that is established on the steepest part of the phase transition curve and is maintained there while the infrared detector is operated.

Abstract: A thin-film temperature sensor with a robust bridge structure and a stable electric characteristic, as well as a method of manufacture thereof, is provided. Over the substrate 1 with the cavity 13 are formed electrode layers 6 in a bridge shape, whose electrodes 6A, 6B are bonded with thermal sensitive resistor films 7, 8, which are then covered with a protective insulating film 9, a buffer film 10 and a glass layer 11 in that order. The protective insulating film 9 and the glass layer 11 extend over the substrate 1 to increase the mechanical strength of the infrared sensitive element A. The sandwich structure of the insulating films 5, 9 holding the thermal sensitive resistor films 7, 8 in between and the use of the buffer film 10 combine to prevent electrical characteristic variations, which would otherwise be caused by changes in composition of the thermal sensitive resistor films 7, 8 during the heat treatment process.

Abstract: The invention is an apparatus and method for making a polymer bolometer. The apparatus consists of a current supply and current receiving paths affixed to a substrate. Bridging the current supply paths and current receiving paths is an electrically conductive polymer. The polymer bolometer may be fabricated using conventional photolithographic techniques.

Abstract: An infrared detector device is described. It is based on an infrared analog of the Fabry Perot interferometer, using one curved, fully reflecting, plate and one planar, mainly reflecting, but partially transmitting, plate. The space between these plates behaves as a resonant cavity which can be built to respond to either a broad or a narrow band of wavelengths in the general range between 1 and 15 microns. It is also possible to combine several detectors of different narrow bands in a single device. Actual detection of the radiation is based on use of thin film resistors, having a high thermal coefficient of resistance, that are thermally isolated from the other parts of the structure. Details relating to the manufacture of the devices are given.

Abstract: An obstacle detection apparatus includes a rubber-like elastic body interspersed with electroconductive particles, and means for applying a voltage to the rubber-like elastic body to obtain an ultrasonic wave reception signal from a change in electrical resistance of the elastic body. An ultrasonic wave transmission apparatus is mounted on a support member for transmitting an ultrasonic wave outward. The rubber-like elastic body interspersed with electroconductive particles is provided along an outer periphery of the support member, and a voltage is applied to the rubber-like elastic body to obtain an ultrasonic wave reception signal from a change in electrical resistance of the elastic body as a result of receiving the ultrasonic wave reflected from an obstacle.

Abstract: In a microbolometer infrared radiation sensor, a detector material (VO.sub.2) having a high thermal coefficient of resistance to increase the sensitivity of the apparatus.

Abstract: An infrared detecting arrangement includes an infrared detecting element having a heat insulating film and an infrared detector which are disposed between an interior space of a hermetically sealed casing for the element and a cavity formed within a substrate of the element and communicating through a ventilator with the interior space.

Abstract: A camera system primarily for infrared radiation having a focal plane array of microbolometer elements in a vacuum package with inexpensive thermoelectric temperature stabilization is shown. The stabilization temperature may be selected by a designer or a user over a wide range of temperatures, but room temperature use is primarily expected. The microbolometers are passive elements and the readout scheme involves a sweep of the array with a short duration pulse-high level bias current.

Abstract: A detector using a diamond thin film having high response speed and sensitivity. A p-type layer may be formed in an upper portion of the diamond film by doping boron thereto. Since a sensor layer and a heat reservoir layer are united in one layer, a higher sensitivity and a higher response speed can be achieved.

Abstract: An infrared sensor comprising a sensor substrate formed of a semiconducting material and at least one set of infrared sensing portions formed one each on the opposite surfaces of said sensor substrate, wherein said infrared sensing portions are superposed one each on bride portions formed on cavities formed one each on the opposite surfaces of said sensor substrate.

Abstract: An infrared radiation sensor has a bridge portion which bridges a cave portion formed in a sensor substrate. The bridge portion includes an infrared radiation receiving portion and support portions for supporting the infrared radiation receiving portion. The plane shape of the infrared radiation receiving portion is a square or a circle which has a greater side length or a greater diameter than the width of the supporting portions to increase the amount of infrared radiation received by the infrared receiving portion.

Abstract: A two-level IR detector imaging array of high fill-factor design. The upper microbridge detector level is spaced above and overlies the integrated circuit and bus lines on the substrate surface below.

Abstract: A infrared and/or farinfrared detector using a diamond thin film having high response speed and sensitivity is disclosed. A p-type layer is formed in an upper portion of the diamond film by doping boron thereto. Since a sensor layer and a heat reservoir layer are united in one layer, a higher sensitivity and a higher response speed can be achieved.

Abstract: A sensor element that is adapted to respond to radiation, and which is adapted to the manufacture of a sensor array is manufactured into a single crystal semiconductor means such as silicon. An anisotropically etched pit is provided under the sensing surface, and the pit generally corresponds to the geometry of the sensor element. The geometry is selected to be rectangular and falls along a selected orientation of the particular crystalline structure used for manufacture of the device to thereby allow a high density of sensor elements to provide an efficient array.

Abstract: A thermoelectric sensor element that is adapted to respond to thermal radiation is capable of manufacture into a sensor array on a single crystal semiconductor means, such as silicon. An anisotropically etched pit is provided under the sensing surface, and the pit generally corresponds to the geometry of the sensor element. The geometry is selected to be rectangular and falls along a selected orientation of the particular crystalline structure used for manufacture of the device to thereby allow for a high density of the sensor elements. The sensor elements are manufactured of two dissimilar metals in a sinuous pattern to provide the thermoelectric effect.

Abstract: In the present invention, semiconductor fibers electrical resistance of which varies in response to temperature change are arranged unidirectionally or bidirectionally, so that a detection element which has excellent response characteristic, can detect also a position of infrared source, and is inexpensive can be obtained.

Abstract: A fractionally spaced adaptive equalizer structure provides improved processing speed. Equalization is performed by time-spaced processing arrays, each array having a plurality of elements each performing one of the required complex component multiplication. Particular advantages are achieved in high data-rate low-cost modem design.

Abstract: An infrared detective element for detecting a dose of infrared rays by a change in electrical resistance of monofilaments composed mainly of silicon carbide upon infrared radiation thereto,either the monofilaments having a resistivity of 1.0.times.10.sup.5 to 1.0.times.10.sup.3 .OMEGA..cm at room temperature and a diameter of 3 to 200 .mu.m,or the monofilaments having a composition:Si: 50 to 70 wt %C: 28 to 40 wt %O: 0 to 10 wt %the balance (H and/or Ti or Zr): 0 to 10 wt %, and having a resistivity of 1.0.times.10.sup.5 to 1.0.times.10.sup.-1 .OMEGA..cm at room temperature and a diameter of 3 to 200 .mu.m,in either case, the monofilaments being arranged between electrodes without bringing them into contact with each other. The infrared detective elements of the present invention are excellent in properties, especially short response times.

Abstract: A two-level IR detector imaging array of high fill-factor design. The upper microbridge detector level is spaced above and overlie the integrated circuit and bus lines on the substrate surface below.

Abstract: In a microbolometer infrared radiation sensor, a detector material (VO.sub.2) having a high thermal coefficient of resistance to increase the sensitivity of the apparatus.