Abstract: A conductive polymer PTC device includes upper, lower, and center electrodes, with a first PTC conductive polymer layer between the upper and center electrodes, and a second PTC conductive polymer layer between the center and lower electrodes. Each of the upper and lower electrodes is separated into an isolated portion and a main portion. The isolated portions of the upper and lower electrodes are electrically connected to each other and to the center electrode by an input terminal. Upper and lower output terminals are provided, respectively, on the main portions of the upper and lower electrodes and are electrically connected to each other. The resulting device is, effectively, two PTC devices connected in parallel, thereby providing an increased effective cross-sectional area for the current flow path, and thus a larger hold current, for a given footprint.

Abstract: A thick-film resistor and a process for forming the resistor to have accurate dimensions, thereby yielding a precise resistance value. The resistor generally includes an electrically resistive layer and a pair of terminals, a first of which is surrounded by the second terminal, so as to form a region therebetween that surrounds the first terminal and separates the first and second terminals. The terminals are preferably concentric, with the second terminal and the region therebetween being annular-shaped. The resistive layer electrically connects the first and second terminals to complete the resistor. Each of the terminals has a surface that is substantially parallel to an upper and/or lower surface of the resistive layer and contacts the resistive layer. The surfaces of the terminals may be embedded in the resistive layer by printing the resistive material over the terminals, or may contact the upper or lower surface of the resistive layer by locating the terminals above or below the resistive layer.

Abstract: A composition material for use in manufacturing a varistor consists of the following constituents:a) zinc oxide,b) ceramic structure influencing additives selected from the group consisting of bismuth oxide, boric acid, chromium oxide, cobalt oxide, manganese oxide and tin oxide,c) a grain growth influencing additive selected from the group consisting of antimony oxide, silicon dioxide and titanium dioxide,d) an organic solvent carrier,e) an organic viscosity influencing additive, andf) an organic binder.The composition may serve as a ceramic ink for use in the manufacture of multilayer varistors, especially using a screen printing process.A multilayer varistor with pin receiving apertures has a plurality of electrode segments coplanar to each other surrounding the apertures.

Abstract: A ceramic circuit substrate having a resistor deposited on a surface thereof, said ceramic substrate having a coefficient of thermal expansion ranging from 5.0.times.10.sup.-6 /.degree. C. to 7.0.times.10.sup.-6 /.degree. C., the resistor being coated with a glass overcoat and made of 15 to 50% of RuO.sub.2 and 85 to 50% of a CaO--Al.sub.2 O.sub.3 --SiO.sub.2 --B.sub.2 O.sub.3 -system glass, the glass overcoat being made of 60 to 100% of a CaO--Al.sub.2 O.sub.3 --SiO.sub.2 --B.sub.2 O.sub.3 -system glass and up to 40% of alumina, wherein the resistor has a coefficient of thermal expansion greater than that of the glass overcoat. Due to the above specific relationship between the coefficient of thermal expansion of the resistor and that of the overcoat, the resistor is not subject to cracking at the time of trimming and thereafter, and realizes the exertion of resistance performance ensuring excellent weather resistance and stability.

Abstract: A resistance element which is formed on a substrate by resistors and which divides and supplies high voltage to an electron gun of a cathode ray tube, wherein part or all of the substrate is covered by a high resistance conductive material layer as a topmost layer, and a cathode ray tube having the same.

Abstract: A mirror heater which is suitable for bathrooms and humid spaces includes electrically insulating layers which are partially provided by double-sided adhesive tapes. The double-sided adhesive tapes fix the various layers to one another and provide an insulative layer.

Abstract: An electrical device having a resistive element having a first electrode in electrical contact with the top surface of the resistive element and a second electrode in electrical contact with the bottom surface of the resistive element. An insulating layer is formed on the first and second electrodes. A portion of the insulating layer is removed from the first and second electrodes to form first and second contact points. A conductive layer is formed on the insulating layer and makes electrical contact with the first and second electrodes at the contact points. The conductive layer has portions removed to form first and second end terminations separated by electrically non-conductive gaps. The wrap-around configuration of the device allows for an electrical connection to be made to both electrodes from the same side of the electrical device.

Abstract: According to the present invention, there is provided a metal oxide film resistor which has an insulating substrate, a metal oxide resistive film having at least a metal oxide film having a positive temperature coefficient of resistance and/or a metal oxide film having a negative temperature coefficient of resistance, and/or a metal oxide insulating film. The metal oxide film resistor is not affected by moisture or alkali ions in the insulating substrate. The resistance of the film itself does not change. The metal oxide film resistor is extremely reliable.

Abstract: A force transducer includes an elongated lever arm attached to a substrate having a central portion and substantially planar tab regions that project outwardly from the central portion along first and second orthogonal force-detecting axes. The substrate undergoes localized strain approximately at the junctions of the tab regions and the central portion when an external force is applied to the free end of the lever arm. A thick film strain gauge material is screen printed directly onto the substrate in at least a first location and a second location and conductive pads on the substrate are electrically coupled to the thick film strain gauge material at each location to define a first strain gauge oriented along the first force detecting axis and a second strain gauge oriented along the second force detecting axis. The lever arm can be of a compliant construction to provide proprioreceptive feedback to a user.

Abstract: A circuit protection device which comprises first and second laminar electrodes; a laminar PTC conductive polymer resistive element sandwiched between the electrodes; a third laminar conductive member which is secured to the same face of the PTC element as the second electrode but is separated therefrom; and an electrical connector which connects the third conductive member and the first electrode. This permits connection to both electrodes from the same side of the device, so that the device can be connected flat on a printed circuit board, with the first electrode on top, without any need for leads. The connector is preferably a cross-conductor which passes through an aperture in the PTC element, because this makes it possible to carry out the steps for preparing the devices on an assembly which corresponds to a number of individual devices, with division of the assembly as the final step.

Abstract: A temperature sensor includes a ceramic substrate, and a sensing resistor containing platinum is embedded in the ceramic substrate. Electric current can be applied to the sensing resistor through the lead. The voltage of the sensing resistor can be detected through the second lead. Another resistor for dividing voltage is electrically connected to the sensing resistor, the resistor is trimmed by laser irradiation so as to adjust its electrical resistance value such that upon applying electric current having a certain value onto the sensing resistor an output voltage having a predetermined value is generated. Heat generated by the laser irradiation to the resistor does not affect an electrical resistance value of the resistor as much as that of the sensing resistor, thereby improving precision of the temperature sensor. The sensing resistor avoids contact with the atmosphere.

Abstract: In a method of manufacturing a multilayered ceramic substrate, a capacitor layer is formed on a green sheet of a low temperature co-firable ceramic by means of printing. The green sheet with the capacitor layer and a plurality of other green sheets are laminated together into a substrate laminate. Two release green sheets of alumina system each unsintered below 1,000.degree. C. are further laminated to the top and the bottom of the substrate laminate respectively. The obtained laminate is fired at a temperature ranging between 800.degree. and 1,000.degree. C. under pressure ranging between 2 and 20 kgf/cm.sup.2. The release green sheets adherent to the side surfaces of the substrate are removed after the firing. Subsequently, a wiring pattern is printed on the substrate, which is then fired at a temperature ranging between 800.degree. and 1,000.degree. C.

Abstract: The invention concerns a method and measuring device for determining the water content of a gas. The measuring device comprises a measuring sensor arrangement which consists of: a capacitive sensor thermally coupled to a heating element and to a temperature sensor; an energy source connected to the heating element; a first evaluation circuit connected to the temperature sensor. The heating element and the temperature sensor are formed by a common temperature-dependent resistor. Together with the temperature dependent resistor and the energy source, the second evaluation circuit forms a control circuit for keeping the temperature of the capacitive sensor constant. As a function of the capacity of the capacitive sensor as the sole variable the first evaluation circuit determines the actual value of the relative humidity of the gas from previously determined calibrating values at the same constant temperature by interpolation or extrapolation of the calibrating values.

Abstract: Proposed is a heater arrangement for a measuring sensor for determining components in gases, particularly in exhaust gases of internal combustion engines. The heater arrangement comprises at least two heating elements (10, 11) which are disposed at least partly one above the other and electrically insulated from one another by means of at least one insulating layer. A contacting member (14) laid through the insulating layer from one heating element (10) to the other heating element (11) is provided in such a manner that the heating elements (10, 11) are switched in series one behind the other.

Abstract: A chip resistor includes a substantially rectangular substrate of an insulating material having opposed substantially flat top and bottom surfaces and edges extending between the top and bottom surfaces. A layer of a resistance material is on the top surface of the substrate. Separate termination layers of a conductive material are on the top surface or the substrate and contact the resistance layer at opposite ends thereof. Each of the termination layers extends across an edge of the substrate and over a portion of the bottom surface of the substrate. The total area of the portions of the termination layers on the bottom surface of the substrate is greater than the total area of the portions of the termination layers on the top surface of the substrate so that the spacing between the ends of the portions of the termination layers on the bottom surface of the substrate is smaller than the spacing between the ends of the portions of the termination layers on the top surface of the substrate.

Abstract: A resistive component which is composed of one or more resistive films which, if necessary, may be provided on a substrate, and at least one of which is on the basis of CrSi, the resistive film on the basis of CrSi comprising 5-50 at. % Cr, 10-70 at. % Si, 5-50 at. % O and at least one element of the group formed by B, C and N in a concentration of 1-50 at. %. The advantageous properties of the resistive component in accordance with the invention are based on the reactive incorporation of oxygen and carbon or oxygen and nitogen or oxygen and carbon and nitrogen into resistive films on the basis of CrSi.

Abstract: An organic vehicle is added to and kneaded with a solid component comprising from 60 to 95% by weight of a resistive material having a composition of La.sub.x Sr.sub.1-x CoO.sub.3 (x is from 0.40 to 0.60) and from 5 to 40% by weight of glass frit to obtain a resistive paste. A substrate is coated with the resistive paste and fired to produce a resistor. The resistive paste can be fired in any of air, neutral and reducing atmospheres. The resistor has any desired resistance value within a broad range, and the reproducibility of the resistor with a desired resistance value is good.

Abstract: A circuit board material is disclosed which includes a support layer, at least one electrical resistance layer having a preselected resistivity adhered to the support layer, a barrier layer adhered to the electrical resistance layer, and a conductive layer adhered to the barrier layer. The barrier layer is capable of protecting the resistance layer from attack by alkaline ammoniacal copper etchants. A method of producing the circuit board material is also disclosed.

Abstract: The present invention involves adding additional structures to a polysilicon resistor which do not significantly affect the resistance of the polysilicon resistor. These additional structures add to the area of the polysilicon resistor, and therefore reduce the self-induced temperature change caused by the voltage across the resistor. Since the resistance of the polysilicon resistor depends on its temperature, the reduction of the self-induced temperature change lowers the variation in the resistance value at different voltages.

Abstract: A data bus for a fault tolerant avionics digital autonomous terminal access communications system is provided with a terminating resistor for absorbing or sufficiently attenuating signals incident on it so that they are not reflected back into the transmission line at amplitudes where they would cause distortion of the data signal. The data bus and terminating resistors are designed to continue providing full operational capability even if the electrical resistance of the terminating resistor increases by about 5%. The terminating resistor has at least about twenty resistive elements connected in parallel across two conductors in the data bus at one end thereof. Each resistive element includes a non-conductive substrate having a face surface on which is deposited a conductive film to produce a primary resistor.

Abstract: A resistor structure (10) having a heating element (35) and a resistor (32), and a method of trimming the resistor (32). The heating element (35) is separated from the resistor (32) by a layer of dielectric material (19). The resistor (32) has a layer of resistive material (23) on an etch control layer (22). The resistor (32) is trimmed by providing current pulses (62) through the heating element (35). Heat generated by the current pulses flows to the resistor (32) and anneals or trims the resistor (32). A resistor trimming variable, e.g. a voltage across resistor contacts (30, 31), is monitored and the current pulses are modulated in accordance with the value of the resistor trimming variable (63). The trimming step is terminated when the desired resistance value of the resistor (32) is attained.

Abstract: A thin-film gas sensor and manufacturing method of the same is disclosed which includes a silicon substrate; an insulating layer formed on the surface of the silicon substrate; a heater formed in zigzag on the surface of said insulating layer; a temperature sensor formed in zigzag on the surface of the insulating layer in parallel with the heater; an interlayer insulating layer for electrically insulating the heater and temperature sensor formed on the insulating layer; a plurality of electrodes formed on the interlayer insulating layer placed between the heater and temperature sensor; a plurality of pairs of gas sensing layers disposed in an array on the electrodes and for reacting on detected gas; and a plurality of gas shielding layers formed on one gas sensing layer out of the pair of gas sensing layers and for shielding the detected gas so that the gas sensing layers do not react on the detected gas.

Abstract: A surface mount resistor is formed by joining three strips of material together in edge to edge relation. The upper and lower strips are formed from copper and the center strip is formed from an electrically resistive material. The resistive material is coated with epoxy, and the upper and lower strips are coated with tin or solder. The strips may be moved in a continuous path and cut, calibrated, and separated for forming a plurality of electrical resistors.

Abstract: A resistor combination and method, that is formed by a substrate having a resistive film on it, and pins extruding from one edge of the substrate and connected to the film. A U-shaped cold region is provided on the substrate around at least much of the film, and is so constructed that application of common high overload voltages to the pins causes vertical fracture of the substrate. The resulting substrate pieces are held by the pins to the circuit board. In one embodiment, a synthetic resin housing is provided around the substrate.

Abstract: A multi-layer polysilicon resistor and a method by which the multi-layer polysilicon resistor is formed. A minimum of two polysilicon layers is formed upon an insulating layer, the insulating layer in turn being formed upon a semiconductor substrate. The first polysilicon layer is formed to a first thickness at a first deposition temperature. The second polysilicon layer is formed directly upon the first polysilicon layer. The second polysilicon layer is formed to a second thickness at a second deposition temperature. The two deposition temperatures are in the range of about 450 degrees centigrade to about 620 degrees centigrade, and the difference in temperature between the first deposition temperature and the second deposition temperature is a minimum of 10 degrees centigrade.

Abstract: In a first embodiment of the invention a layer of ruthenium oxide is reactively deposited onto a substrate, then annealed for TCR adjustment and for stabilization. In a second, bi-layer embodiment of the invention, a layer of tantalum nitride is first reactively deposited onto a substrate, then annealed for stabilization. After a ruthenium oxide layer is reactively deposited onto the annealed tantalum nitride layer, the structure is annealed until a near-zero effective TCR for the bi-layer resistor is achieved. The ruthenium oxide capping layer serves as a barrier against chemical attack.

Abstract: A resistor of SMD (Surface Mounted Device) construction includes a film of a resistive alloy as a resistive track on two electrically separated carrier plate elements of copper, which are constructed as contact elements solderable to the terminals of a printed circuit board to thereby ensure good heat dissipation into a printed circuit board. In order to manufacture such resistors, a resistive film sufficient for a plurality of individual resistors is adhered to but electrically isolated from a large copper plate and the laminate formed thereby is split into the individual resistors after producing the individual resistive tracks and their electrical connections to the copper plate and after producing gaps between the plate elements for each track.

Abstract: A thick film circuit board includes a substrate, a thick film resistor on the substrate and having a trimming region and a protecting element on the substrate for protecting the thick film resistor and having a window through which the trimming region is exposed. The protecting element may be a protective coating disposed on the substrate. Alternatively, the protective element may be a protective frame extending along an external periphery of a region where the thick film resistor is located on the substrate and having a height for protecting the thick film resistor from mechanical damage.

Abstract: A process for producing a thin-film measurement resistor in which an electrically insulating work material with a low specific heat capacity serves as substrate material, a metal film, preferably platinum, being applied thereto. The lateral electrical resistor is then structured and trimmed by erosive after-treatment, and the metal film is passivated in a final process step. The resistor element reacts more quickly to changes in temperature, the cover layer is extremely resistant to corrosion, and the entire construction is simple to produce in that glass is used as a substrate material and is provided, before applying the metal film, with a bonding agent layer of Al.sub.2 O.sub.3 which is substantially thinner than the metal film. The metal film is then applied by evaporation and structured by sputter etching. Finally, the metal film is provided with a protective coat of SiO.sub.x.

Abstract: A multi-layer module that has incorporated therein an additional sheet with a heat generating film resistor formed thereon. A temperature responsive controller regulates the film resistor current in order to regulate the temperature at the surface of the module. The invention is applicable to both single chip and multiple chip modules, and for multi-chip modules a plurality of discrete film resistors on a single may be used.

Abstract: A polysilicon resistor structure and a method by which the polysilicon resistor structure may be formed. A polysilicon resistor is formed upon the surface of a semiconductor substrate. A pair of dummy polysilicon layers is formed along opposite edges and separated from the polysilicon resistor. A pair of metal sidewalls is then formed upon the upper surfaces of the pair of dummy polysilicon layers, and a top metal layer is formed bridging the upper surfaces of the pair of metal sidewalls. The pair of dummy polysilicon layers, the pair of metal sidewalls and the top metal layer form an open ended cavity upon the semiconductor substrate within which structure the polysilicon resistor resides. The polysilicon resistor is separated from the structure by an insulating material which is not susceptible to outgassing of hydrogen.

Abstract: A low profile load resistor includes a base plate of an electrically conductive material having a pair of opposed flat surfaces and a hole therethrough. A chip resistor is mounted on one of the surfaces of the base plate. The chip resistor includes a substrate of an electrical insulating material having a pair of opposed flat surfaces and a hole therethrough which is aligned with the hole in the base plate. A resistance film is on one of the surfaces of the substrate and has termination films at opposite ends thereof. A termination tab is electrically connected to one of the termination films and extends through the holes in the substrate and base plate. The other termination film is electrically connected to the base plate. A cover plate of an electrical insulating material is over the resistor film and is mechanically connected to the substrate.

Abstract: Electrical resistors and resistor networks are provided on an insulative substrate with designated conductive terminations by direct and continuous writing of resistive lines in fine-line patterns between and over each two of neighboring terminations from heterogeneous resistive thick film compositions. The resistive lines of line width w and total length l between conductive terminations can be directly written by suitable writing apparatus to have a high aspect ratio n=l/w, thereby providing resistors and resistor networks of high resistance values on an overall substrate area significantly smaller than required for conventional thick film resistors of comparable resistance value and comparable operational characteristics.

Abstract: Flow-through fluid heaters useful, e.g., for the preheating of exhaust gas streams prior to catalytic treatment thereof, are made by bonding an electrically conductive metallic film or foil to at least one pre-sintered flexible ceramic foil substrate to provide a flexible, electrically conductive ceramic/metallic heating element, that element then being formed into a crimped sheet or base sheet for incorporation into a honeycomb structure which includes a plurality of open channels extending from one surface of the structure to another surface of the structure, formed by one or more contacting combinations of crimped sheet and base sheet. Catalytic coatings may be applied to the preheaters to provide a heater/converter with very rapid light-off characteristics.

Abstract: A hybrid thermistor temperature sensor includes a two-pole network of temperature-dependent resistors being in thermal and electrical contact with each other. The two-pole network has at least one temperature-dependent resistor with a positive temperature coefficient as a cold conductor, at least one temperature-dependent resistor with a negative temperature coefficient as a hot conductor, a temperature/resistance curve with a constant behavior or plateau in a predetermined temperature region, and at least one electrode electrically coupling at least two of the temperature-dependent resistors to each other. The at least one electrode is produced from a material ensuring a contact between the temperature-dependent resistors that breaks down a barrier layer and forms a diffusion barrier to a mutual diffusion of ingredients of each respective one of the contacting temperature-dependent resistors into the other of the temperature-dependent resistors.

Abstract: A plurality of semiconductor substrates having positive resistance-temperature coefficients are bonded to each other through a glass layer to be stacked. First and second terminal electrodes are formed on end surfaces of such a stacked structure respectively. First and second ohmic electrodes are formed on respective major surfaces of each semiconductor substrate, and the first and second ohmic electrodes are connected to the first and second terminal electrodes respectively. The ohmic electrodes contain a metal, other than silver, exhibiting an ohmic property, such as zinc, aluminum, nickel or chromium, for example. The terminal electrodes also contain a metal, other than silver, exhibiting an ohmic property. The terminal electrodes may be provided on surfaces thereof with layers which are made of a metal having excellent solderability.

Abstract: An inverted thin film resistor structure comprises a metallic interconnect layer having predetermined patterns delineating two or more metallic interconnect leads (e.g. Al 36) overlaying a supporting layer (e.g. SiO.sub.2 32), an interlevel dielectric layer (e.g. SiO.sub.2 40) overlaying the supporting layer, and planarized so as to expose a top contact portion of the metallic interconnect leads, and an inverted thin film resistor (e.g. TaN 44) overlaying a portion of the planarized interlevel dielectric layer and overlaying the exposed top contact portions of the metallic interconnect leads. The novel inverted thin film resistor structure does not require a protective metal layer and does not require any vias in direct contact with the resistor. In addition, both the thin film resistor and the metallic interconnect can be formed with pattern and etch techniques.

Abstract: A telephone resistor combination and method, that is formed by a ceramic substrate having a resistive film on it, and pins on one edge of the substrate and connected to the film. A U-shaped cold region is provided on the substrate around at least much of the film, and is so constructed that application of common high overload voltages to the pins causes vertical fracture of the substrate. The resulting substrate pieces are held by the pins to the circuit board.

Abstract: A variable resistor having a resistor body including a lower layer resistor in which at least carbon fibers and a carbon black are dispersed in a synthetic resin and an upper resistance layer not containing carbon fibers and in which at least a carbon black is dispersed in a synthetic resin, the upper layer being formed on the lower layer. Abrasion of a slider and the resistor body are suppressed to provide a long operation life, that is, a sliding movement life of the variable resistor.

Abstract: A semiconductor body (10) has a first region (13) of one formed a semiconductor device (Rx) having a resistance which varies with temperature. The semiconductor device (Rx) is formed by a second region (14) of the opposite conductivity type formed within the first region (13) and a third region (15) of the one conductivity type formed within the second region (14), with first and second electrodes (16) and (17) being spaced apart on the third region (15) so that a resistive path is provided by the third region (15) between the first and second electrodes (16 and 17) and a reference electrode (18) connecting the second region (14) to a reference potential.

Abstract: A rapid temperature sensor formed of a metal from the platinum group is provided. The rapid temperature sensor includes a substrate over which a platinum resistive layer is provided. A double layer, forming a passivation layer, is provided over the platinum resistive layer to prevent oxidation. The double layer includes a ceramic layer and a glass layer. The double layer prevents oxygen from reaching the platinum resistive layer even at temperatures up to 1,000.degree. C.

Abstract: A precision resistor, on a semiconductor substrate, formed by using two polysilicon stripes to mask the oxide etch (and ion implantation) which forms a third conductive stripe in a moat (active) area of the substrate. The sheet resistance R.sub.p and a patterned width W.sub.p of the polysilicon stripes and the patterned width W.sub.M and sheet resistance R.sub.M, are related as R.sub.p W.sub.p =2R.sub.M W.sub.M. By connecting the three stripes in parallel, a net resistance value is achieved which is independent of linewidth variation.

Abstract: A noise filter includes a plurality of resistance patterns arranged in parallel, and a ground pattern opposed to the resistance patterns via a dielectric substrate. Distribution capacitance is caused between the resistance patterns and the ground pattern. The function of the noise filter comes from the distribution capacitance and the resistance of the resistance patterns as the RC composite elements. The noise filters can be connected in plural. Noise can be eliminated without twisting the effective signal components in a compact noise filter.

Abstract: A manufacturing method for a thin film resistor is disclosed. An insulating layer is formed on a substrate having a contact region. The insulating layer above the contact region is removed by etching to expose the contact region. A metal layer and an interlayer are then formed in sequence on the surface of the structure. The metal layer and the interlayer above the region where the resistor will be formed is next removed, and then a resistor layer is formed on the surface of the structure. The thin film resistor is completed by etching away the resistor layer except for the predetermined region where the resistor is to be formed.

Abstract: A positive temperature coefficient temperature sensor for use in exhaust-gas systems of internal-combustion engines includes a sensor element having a multilayer laminate composite structure with a positive temperature coefficient thermistor, formed by at least two resistor tracks arranged one above another and electrically insulated from one another. One of the layers of the multilayer structure is an insulating ceramic base film, and a first one of the at least two resistor tracks, with a supply lead, is printed onto the insulating ceramic base film. A second one of the at least two resistor tracks is disposed separately on the insulating ceramic base film by means of at least one insulating layer printed above the first one of the at least two resistor tracks. The at least two resistor tracks disposed one above another are connected by a land guided through the at least one insulating layer.

Abstract: A fuse resistor protects a circuit from a surge, an overcurrent from an unexpected connection, or the like. When a continuous overvoltage higher than a predetermined value is applied to the circuit, the heat from a heat-generating resistant film fractures an insulating substrate of the fuse resistor to open the circuit. Changing the minimum current to which the fuse resistor responds, by modifying a cutout or notch on the substrate, makes it possible to use the fuse resistor anywhere in the circuit. A discharging-type surge absorbing element with a security mechanism that includes the fuse resistor can thus provide protection against a surge or a continuous overcurrent that is more than the rated value of the fuse resistor.

Abstract: A sheet-like heating element using an electrically conductive polymer complex consisting of a) a polycation of polyheteroaromatic compound; and b) a polyanion of thermoplastic polymer, containing a sulfated alcohol group in the repeating structural unit, having film-forming properties.

Abstract: An inverted thin film resistor structure comprises a metallic interconnect layer having predetermined patterns delineating two or more metallic interconnect leads (e.g. Al 36) overlaying a supporting layer (e.g. SiO.sub.2 32), an interlevel dielectric layer (e.g. SiO.sub.2 40) overlaying the supporting layer, and planarized so as to expose a top contact portion of the metallic interconnect leads, and an inverted thin film resistor (e.g. TaN 44) overlaying a portion of the planarized interlevel dielectric layer and overlaying the exposed top contact portion of the metallic interconnect leads. The novel inverted thin film resistor structure does not require a protective metal layer and does not require any vias in direct contact with the resistor. In addition, both the thin film resistor and the metallic interconnect can be formed with pattern and etch techniques.

Abstract: The material to be used in a semiconductor resistor is produced by successively depositing multiple layers of substantially intrinsic polycrystalline semiconductor material. The deposition process is stopped between layers to create an interruption of the polycrystalline structure of the semiconductor material. This interruption reduces the modulation experienced by the resistor when it is located above an underlying conductor in a semiconductor circuit. Such a configuration typically exists in a memory cell where the load resistor of a field-effect transistor is located over the gate of the transistor.

Abstract: A physical quantity sensor e.g., temperature sensor having a resistor pattern and a ceramic support carrying the resistor pattern. The resistor pattern has an ionizing component retention conductor pattern which is branched at its negative terminal side.The resistor pattern with branched pattern are stacked between the ceramic support layers.Migration in the resistor pattern is suppressed to prevent the resistance of the resistor pattern from being increased for assuring accurate measurement of temperature. The sensor is operated without cooling to 0.degree. C.