Abstract: An image capturing apparatus comprises a first generation circuit that generates a first synchronization signal with a predetermined cycle, a second generation circuit that generates a second synchronization signal for controlling timings for driving an image sensor including timings for repeatedly reading out image signals from the image sensor, a control circuit that controls the second generation circuit in accordance with a driving method of the image sensor, a selector that selects the first synchronization signal or the second synchronization signal in accordance with the driving method of the image sensor and outputs the selected synchronization signal, and a display panel that updates and displays image signals which are repeatedly read out from the image sensor at timings based on the synchronization signal selected by the selector.

Abstract: A solid-state imaging device includes a plurality of photoelectric converting units and a plurality of charge-accumulating units each accumulating a charge generated in the corresponding photoelectric converting unit. The photoelectric converting unit includes a photosensitive region that generates the charge in accordance with light incidence, and an electric potential gradient forming unit that accelerates migration of charge in a second direction in the photosensitive region. The charge-accumulating unit includes: a plurality of regions (semiconductor layers) having an impurity concentration gradually changed in one way in the second direction, and electrodes adapted to apply electric fields to the plurality of regions. Each of the electrodes is disposed over the plurality of regions having the impurity concentration gradually varied.

Abstract: An optical detection unit AR is divided so as to have a plurality of pixel regions PX aligned in a column direction. Signals from the plurality of pixel regions PX are integrated for each optical detection unit AR, and output the signal as an electrical signal corresponding to a one-dimensional optical image in time series. Each of the pixel regions PX includes a resistive gate electrode R which promotes transfer of charges in the photoelectric conversion region and a charge accumulation region S2. A drain region ARD is adjacent to the charge accumulation region S2 through a channel region.

Abstract: Provided is an imaging device that includes a plurality of pixels, each of the plurality of pixels including a photoelectric conversion unit configured to accumulate charges generated by an incident light, a first holding unit and a second holding unit configured to hold the charges, an amplification unit configured to output a signal based on the charges, a first transfer switch provided between the photoelectric conversion unit and the first holding unit, a second transfer switch provided between the photoelectric conversion unit and the second holding unit, a third transfer switch provided between the first holding unit and the amplification unit, and a fourth transfer switch provided between the second holding unit and the amplification unit, and outputs a signal including a signal based on actual signal charges and a signal including a signal based on false signal charges.

Abstract: Systems, methods, and computer programs, embodied in or as a memory management module, are disclosed for thermally controlling memory to increase its performance. One exemplary embodiment includes a memory, one or more processors, and a thermoelectric cooling device. The one or more processors access the memory via a memory controller electrically coupled to the memory. The thermoelectric cooling device is configured to thermally control the memory in response to a predicted change in temperature of the memory.

Abstract: A light receiving region has a planar shape of a rectangular shape having a pair of long sides opposed to each other in a first direction and a pair of short sides opposed to each other in a second direction. First and second semiconductor regions are arranged as spatially separated from each other along the respective long sides. First and second gate electrodes are arranged each between the corresponding semiconductor region and the light receiving region. Third gate electrodes are arranged as spatially separated from each other between the first and second gate electrodes arranged along the long sides. Each of the third gate electrodes has a first electrode portion located between a third semiconductor region and the light receiving region, and a second electrode portion overlapping with the light receiving region and having a width in the second direction smaller than that of the first electrode portion.

Abstract: An object of the invention is to display image data generated based on output data of an image capturing sensor and information other than such image data in a period of the same length as a frame image capturing period of the image capturing sensor. With the invention, image data showing an image of an object is generated per line of a display section based on output data of an image capturing sensor, display data including the image data is caused to be displayed on a first display region of a display screen of the display section constructed by the first display region and a second display region with a line display period having a length of “a” or more to “b” or less after the image data of a plurality of lines is stored in the buffer, and display data that does not include the image data is caused to be displayed on the second display region with a line display period having a length of “a”.

Abstract: An image sensor is provided which is capable of holding data for one frame period or longer and conducting a difference operation with a small number of elements. A photosensor is provided in each of a plurality of pixels arranged in a matrix, each pixel accumulates electric charge in a data holding portion for one frame period or longer, and an output of the photosensor changes in accordance with the electric charge accumulated in the data holding portion. As a writing switch element for the data holding portion, a transistor with small leakage current (sufficiently smaller than 1×10?14 A) is used. As an example of the transistor with small leakage current, there is a transistor having a channel formed in an oxide semiconductor layer.

Abstract: A method includes providing packets to demodulate a modulated photon signal output from a light source, wherein each packet includes a first interval and a second interval, and providing oscillation signals respectively having different phases from one another to photogates during the first interval of each of the packets. The light source is disabled and a direct current (DC) voltage is provided to the photogates during the second interval of each of the packets.

Abstract: A method for controlling a pixel including at least one photodiode capable of being connected to a sense node, the method including the steps of: a) at the beginning and at the end of a first integration period included within a second integration period, controlling the pixel to transfer the charges stored in the photodiode above a first threshold onto the sense node; and b) at an intermediate time between the beginning of the second period and the beginning of the first period, controlling the pixel to transfer the charges stored in the photodiode above the first threshold onto the sense node.

Abstract: A solid-state imaging device includes: a plurality of substrates stacked via a wiring layer or an insulation layer; a light sensing section that is formed in a substrate, of the plurality of substrates, disposed on a light incident side and that generates a signal charge in accordance with an amount of received light; and a contact portion that is connected to a non-light incident-surface side of the substrate in which the light sensing section is formed and that supplies a desired voltage to the substrate from a wire in a wiring layer disposed on a non-light incident side of the substrate.

Abstract: A method of operating an image sensor. Charge accumulated in a photodiode during a first sub-exposure may be selectively stored in a storage node responsive to a first control signal. Charge accumulated in the photodiode during a first reset period may be selectively discarded responsive to a second control signal. Charge accumulated in the photodiode during a second sub-exposure may be selectively stored responsive to the first control signal. Charge stored in the storage node from the first and second sub-exposures may be transferred to a floating diffusion node responsive to a third control signal.

Abstract: A solid-state imaging device is provided. The solid-state imaging device includes an imaging region having a plurality of pixels arranged on a semiconductor substrate, in which each of the pixels includes a photoelectric converting portion and a charge converting portion for converting a charge generated by photoelectric conversion into a pixel signal and blooming is suppressed by controlling a substrate voltage of the semiconductor substrate.

Abstract: An image sensor includes a pixel array with a plurality of pixels. A pixel includes a photodiode, a first transfer gate, a storage gate, and a second transfer gate. The first transfer gate is controllable to transfer charge from the photodiode to under the storage gate. The storage gate is connected to a readout circuit to allow the readout circuit to read out a voltage level of a potential at the storage gate. The second transfer gate is controllable to transfer charge from under the storage gate. A method includes controlling the first transfer gate to transfer charge from the photodiode to under the storage gate, reading out a voltage level of a potential at the storage gate using the readout circuit that is connected to the storage gate, and controlling the second transfer gate to drain charge from under the storage gate.

Abstract: An solid state image pickup device including a plurality of photoelectric conversion regions (PD1, PD2) for generating carriers by photoelectric conversions to accumulate the generated carriers, an amplifying unit for amplifying the carriers, being commonly provided to at least two photoelectric conversion regions, a first and a second transfer units (Tx-MOS1, Tx-MOS2) for transferring the carriers accumulated in the first and the second photoelectric conversion regions, respectively, a first and a second carrier accumulating units (Cs1, Cs2) for accumulating the carriers flowing out from the first and the second photoelectric conversion regions through a first and a second fixed potential barriers, respectively, and a third and a fourth transfer units (Cs-MOS1, Cs-MOS2) for transferring the carriers accumulated in the first and the second carrier accumulating units to the amplifying unit, respectively.

Abstract: A solid-state imaging device includes: plural photodiodes formed in different depths in a unit pixel area of a substrate; and plural vertical transistors formed in the depth direction from one face side of the substrate so that gate portions for reading signal charges obtained by photoelectric conversion in the plural photodiodes are formed in depths corresponding to the respective photodiodes.

Abstract: An image pickup apparatus includes a pixel area including an arrangement of a plurality of pixels each having a photoelectric conversion portion and a common output portion for sequentially amplifying and outputting signals from the plurality of pixels included in the pixel area. The pixel area is formed on a single semiconductor substrate and includes a power supply unit for effecting power supply control of the common output portion independently of control of the power supply to the pixel area, and a control circuit for effecting control to supply no power to the common output portion in a predetermined period after starting photo charge accumulation in the photoelectric conversion portion and to supply the power to the common output portion before the end of a photo charge accumulation period in the photoelectric conversion portion.

Abstract: A charge-coupled device (CCD) image sensor includes a layer of a semiconductor material having a first conductivity type. A horizontal CCD channel region of a second conductivity type is disposed in the layer of the semiconductor material. The horizontal CCD channel region includes multiple phases that are used to shift photo-generated charge through the horizontal CCD channel region. Distinct overflow drain regions are disposed in the layer of semiconducting material, with an overflow drain region electrically connected to only one particular phase of the horizontal CCD channel region. A buffer region of the second conductivity type can be used to electrically connect each overflow drain to the one particular phase of the horizontal CCD channel. Multiple barrier regions are disposed in the layer of semiconductor material, with each barrier region disposed between each overflow drain and the one particular phase electrically connected to the drain.

Abstract: For driving an image sensor having a pixel with a transfer gate formed between a photo-detector and a floating diffusion region, a noise-reducing voltage is applied on the transfer gate during a first period of an integration mode. A blooming current voltage is applied on the transfer gate during a second period of the integration mode. A read voltage is applied on the transfer gate during a read mode after the integration mode. The read voltage has a higher magnitude than the blooming current voltage. With application of the noise-reducing voltage, noise is reduced and a dynamic range is extended for the image sensor.

Abstract: A solid-state imaging apparatus has a plurality of pixels, wherein each of the pixels includes: a photoelectric conversion element for converting incident light to an electric charge; an accumulating element accumulating the electric charge converted by the photoelectric conversion element; a first transfer element for transferring the electric charge converted by the photoelectric conversion element to the accumulating element; a second transfer element for transferring the electric charge accumulated in the accumulating element to a floating diffusion region; and an amplifying element for amplifying the electric charge in the floating diffusion region, wherein the first transfer element transfers the electric charge converted by the photoelectric conversion element to the accumulating element a plurality of times and causes the accumulating element to cumulatively accumulate the electric charge transferred the plurality of times.

Abstract: A method, of selectively reading less than all information from an image sensor for which member-pixels of a subset of the entire set of pixels are individually addressable, may include: sampling information from a targeted member-pixel of the subset without having to read information from the entire set of pixels; and adaptively reading information from another one or more but fewer than all member pixels of the entire set based upon the sampling information without having to read all pixels on the image sensor. A related digital camera may include features similar to elements of the method.

Abstract: An image capture device includes a plurality of image capture elements for capturing an object image, a plurality of vertical output lines for reading signals out of the plurality of image capture elements, and a plurality of processing circuits. Each processing circuit includes a first capacitor element having a first electrode connected to one of the plurality of vertical output lines, a differential amplifier having a first input terminal connected to a second electrode of the first capacitor element, a second capacitor element connected between the first input terminal and an output terminal of the differential amplifier, and a first switch configured to control conduction between the first input terminal and the output terminal of the differential amplifier.

Abstract: A CMOS sensor has unit pixels each structured by a light receiving element and three transistors, to prevent against the phenomenon of saturation shading and the reduction of dynamic range. The transition time (fall time), in switching off the voltage on a drain line shared in all pixels, is given longer than the transition time in turning of any of the reset line and the transfer line. For this reason, the transistor constituting a DRN drive buffer is made proper in its W/L ratio. Meanwhile, a control resistance or current source is inserted on a line to the GND, to make proper the operation current during driving. This reduces saturation shading amount. By making a reset transistor in a depression type, the leak current to a floating diffusion is suppressed to broaden the dynamic range.

Abstract: A solid-state image pickup device 1 includes: a plurality of photoelectric converters 2 which are aligned in a predetermined direction and have a potential made higher toward one side of a direction crossing the predetermined direction; a transferring section 6 which is provided on one side of the photoelectric converters 2 in the direction crossing the predetermined direction and transfers charges generated in the photoelectric converters 2 in the predetermined direction; an unnecessary charge discharging drain 7 which is provided adjacent to the photoelectric converter 2 along the direction crossing the predetermined direction and discharges unnecessary charges generated in the photoelectric converter 2 from the photoelectric converter 2; and an unnecessary charge discharging gate 8 which is provided between the photoelectric converter 2 and the unnecessary charge discharging drain 7 and selectively performs cutting-off and release of the flow of unnecessary charges from the photoelectric converter 2 to the

Abstract: A charge-coupled device (CCD) image sensor includes a layer of a semiconductor material having a first conductivity type. A horizontal CCD channel region of a second conductivity type is disposed in the layer of the semiconductor material. The horizontal CCD channel region includes multiple phases that are used to shift photo-generated charge through the horizontal CCD channel region. Distinct overflow drain regions are disposed in the layer of semiconducting material, with an overflow drain region electrically connected to only one particular phase of the horizontal CCD channel region.

Abstract: A solid state imaging device includes: multiple unit pixels including a photoelectric converter generating electrical charge in accordance with incident light quantity and accumulating the charge, a first transfer gate transferring the accumulated charge, a charge holding region holding the transferred charge, a second transfer gate transferring the held charge, and a floating diffusion region converting the transferred charge into voltage; an intermediate charge transfer unit transferring, to the charge holding region, a charge exceeding a predetermined charge amount as a first signal charge; and a pixel driving unit setting the first transfer gate to a non-conducting state, set the second transfer gate to a conducting state, transfer the first signal charge to the floating diffusion region, set the second transfer gate to a non-conducting state, set the first transfer gate to a conducting state, and transfer the accumulated charge to the charge holding region as a second signal charge.

Abstract: To provide an image pickup device and an image pickup apparatus which are equipped with a linear-log sensor which can cancel variations between pixels in an inflection point caused by variations in a threshold of the transistors constituting a logarithmic conversion circuit while using a circuit constitution similar to a pixel circuit of an image pickup device having only an ordinary linear characteristic. When the photoelectric charge accumulated in a photoelectric conversion element is removed, a charge removing transistor is controlled such that the potential of the channel of the charge removing transistor is set to be higher than the minimum potential of the photoelectric conversion element.

Abstract: A imaging-device driving unit, comprising a signal generator, a detector, and a controller, is provided. The imaging-device driving unit drives an imaging device that has a charge-transfer channel. The charge-transfer channel transfers the signal charges at a speed according to a frequency of a channel-driving signal. The signal generator generates one among a normal transfer signal, and a first and second discharge signals. The first discharge signal is the channel-driving signal whose frequency is determined for discharging an electrical charge remaining in the charge-transfer channel and greater than that of the normal transfer signal. The detector detects a remaining power. The controller orders the signal generator to generate the first discharge signal if the electrical charges remaining in the charge-transfer channel should be discharged and the remaining power is less than a threshold.

Abstract: An image sensor includes an electronic shutter layer that is used to drain charge away from the photosensitive regions during an electronic shutter operation. A current reference component is electrically connected to a contact to the electronic shutter layer. The current reference component produces a signal having a level that is constant as a load current varies from zero to a threshold current level. A scaler component is electrically connected between the current reference component and an electronic shutter pulse driver component. The scaler component transmits the signal to the electronic shutter pulse driver component when the load current does not exceed the threshold current level. When the load current exceeds the threshold current level, the scaler component scales the level of the signal to a different level and transmits the scaled signal to the electronic shutter pulse driver component.

Abstract: A solid-state imaging device includes a plurality of pixels stored in one-dimensional or two-dimensional array, each of the plurality of pixels including a photodiode receiving light and producing photocharges, an overflow gate coupled to the photodiode and transferring photocharges that overflow the photodiode during a storage operation, and a storage capacitor element that stores the photocharges transferred by the overflow gate during the storage operation.

Abstract: At least one exemplary embodiment is directed to an image input apparatus including a plurality of pixel sections, each including a light-sensitive element configured to generate electric charge by photoelectric conversion, a semiconductor region configured to receive a signal transferred from the light-sensitive element, and a transfer switch configured to transfer the signal from the light-sensitive element to the semiconductor region. An image is formed based on a composite signal obtained by combining a saturation signal representing photoelectric charge overflowing from the light-sensitive element and flowing into the semiconductor region and a photoelectric conversion signal stored in the light-sensitive element. Formation of the image is controlled based on a corrected composite signal obtained by correcting a component corresponding to a noise component.

Abstract: An image processing apparatus (5) that corrects an input image signal (Xin) pixel by pixel to generate a corrected image signal (Xout), having a filtering means (2) that determines a luminance distribution of a pixel to be corrected and pixels neighboring the pixel to be corrected, a correction gain calculation means (3) that determines the correction gain of the pixel to be corrected, and an operation means (4) that uses the correction gain determined by the correction gain calculation means to perform an operation on the input image signal pixel by pixel. With this simple configuration, the dynamic range of the input image can be appropriately improved.

Abstract: One or more charge storage regions in a charge-coupled device (CCD) shift register can contain residual charge that did not transfer to a reset drain during a reset operation. An image sensor drains the residual charge from each charge storage region by shifting the residual charge to an adjacent charge storage region and resetting the CCD shift register one more time. The process of resetting the CCD shift register, shifting the residual non-image charge to an adjacent charge storage region, and resetting the CCD shift register again can be repeated any number of times.

Abstract: An image sensor driving unit, comprising a signal generator and a controller, is provided. The charge-transfer channel transfers the signal charges at a speed according to the frequency of a transfer signal. The signal generator transmits the first discharge signal and the second discharge signal to the image sensor. The first and second discharge signals are the transfer signals for the charge-transfer channel to carry out rapid discharge. The frequency of the second discharge signal is greater than that of the first discharge signal. The controller orders the signal generator to generate the first discharge signal during an overlap period when a driving period is at least partially overlapped with a discharge period. The controller orders the signal generator to generate the second discharge signal when the driving period is not overlapping with the discharge period.

Abstract: An image sensor driving unit, comprising a first controller, a second controller and a third controller, is provided. The image sensor driving unit drives an image sensor to carry out the capture of an image. The capture is carried out by ordering pixels to generate signal charges and the charge-transfer channel to transfer the signal charges. The first controller orders the image sensor to carry out a rapid discharge operation before the charge-transfer channel transfers the signal charges. The second controller controls the first controller to order the image sensor to carry out the rapid discharge operation when light is made incident for capture after the first capture with the image sensor operating in continuous photographing mode. The third controller decreases the discharge number for capture after the first capture.

Abstract: An imaging device of the present invention includes a solid-state image sensing device; a vertical transfer drive circuit for feeding a subpulse to the solid-state image sensing device; and a control circuit, and repeats a series of photographing operations in a cycle same as or longer than a period during which the series of photographing operations are performed, the series of photographing operations including an exposure operation for exposing an imaging area after the subpulse is fed to the solid-state image sensing device to sweep out electric charges accumulated in pixels. The control circuit stops the subpulse from being fed from the vertical transfer drive circuit to the solid-state image sensing device during a period during which the exposure operation included in the series of photographing operations is not performed.

Abstract: A CCD containing circuit and method for making the same. The circuit includes a CCD array and a protection circuit. The CCD array is constructed on an integrated circuit substrate and includes a plurality of gate electrodes that are insulated from the substrate by an insulating layer. The gate electrodes are connected to a conductor bonded to the substrate. The protection circuit is also constructed on the substrate. The protection circuit is connected to the conductor and to the substrate and protects the CCD array from both negative and positive voltage swings generated by electrostatic discharge events and the like. The protection circuit and the CCD can be constructed in the same integrated circuit fabrication process.

Abstract: This device for detecting an electromagnetic radiation, comprises a matrix of juxtaposed elementary sensors (1), each associated with a common substrate in which a sequential addressing read circuit is prepared, specific to each of the sensors, thereby constituting as many pixels, the interaction of the radiation with the sensors generating electric charges to be converted to voltage for their subsequent processing, each of the said sensors being biased via an injection transistor (2), of which one of the terminals is connected to an integration capacitance (3), storing the electric charges generated by the sensor during an integration phase, and whereof the quantity of charges is then processed for conversion to voltage. Each of the pixels of the said matrix is associated with a current limiting device (5), for limiting the current generated by each of the elementary sensors to a maximum called reference current, regardless of the radiation flux received by the pixel concerned.

Abstract: In certain embodiments, a unit cell is provided. The unit cell may include a high sensitivity path and a low sensitivity path. The high sensitivity path may include a first transistor and a first switch. The first switch may couple an output node to the first transistor. The low sensitivity path may include a capacitor. A second switch may couple the high sensitivity path to the low sensitivity path. A third switch may couple the high sensitivity path and the low sensitivity path to a voltage node.

Abstract: A method obtains a read-out signal of a pixel having at least a photosensitive element with a charge storage node. The method includes the steps of acquiring charge carriers, converted from impinging radiation on the photosensitive element, on the charge storage node, applying during the integration period at least one reset pulse, resetting incompletely the charge carriers acquired at the moment of applying the reset pulse, to obtain at least one linear response region for the pixel, and driving the pixel in weak inversion after the last incomplete reset pulse of the integration period so as to obtain a logarithmic response part. A corresponding pixel is also described.

Abstract: Circuitry for reducing fixed pattern noise in an image processing system with a 4-T (4 transistors) pixel and a method thereof is proposed. The image processing system includes two voltage sources, two current sources, a 4-T pixel, a second portion of a linearized source follower, a ping pong memory, a PGA, and auto-zero circuitry. By coupling the auto-zero circuitry to the PGA, an open loop is formed to clamp the output of an op amp of the PGA to a stable reference when resetting the PGA so as to remove DC offsets at the output terminal of the op amp.

Abstract: In an imaging apparatus according to the present invention, the driving unit drives each of the pixels in the non-readout region in the first mode such that the setting unit sets the input unit to a third electric potential with the transfer unit being ready to transfer the electric charge to reset the photoelectric conversion unit in a first period and that the setting unit sets the input unit to a fourth electric potential for the pixel to be deselected in a second period later than the first period.

Abstract: A method for driving a CCD-type solid-state imaging device includes: reading charges detected by photoelectric conversion elements into potential packets A (B) formed in a charge transfer path, dividing each potential packet A (B) into plural segment packets A1, A2 (B1, B2) while narrowing a range where the charges are present in each potential packet A (B), by moving a split barrier D from one side of each potential packet A (B) toward the other side of each potential packet A (B), and transferring the charges along the charge transfer path after the dividing. Each split barrier D has a lower potential height than a partition barrier C that forms a boundary between the adjacent potential packets A, B.

Abstract: In a case where a thinning operation is implemented at the point when signal charges are read out from each of pixels to thin out pixel information by lines (row), the thinning may be performed only in the vertical direction, but not in the horizontal direction. In an all-pixel-read-out type CCD image pickup element, a discharge controlling section is provided in each of VH transfer stage sections transferring signal charges from vertical CCDs to a horizontal CCD, and where a thinning mode is selected, among those signal charges transferred from a plurality of the vertical CCDs, those of a given set of columns are stopped and discharged at the respective discharge controlling sections, and those of the rest of columns are transferred to the horizontal CCD, and at the same time, those of a given set of lines (rows) are stopped and discharged for all columns, thereby performing the thinning operation over the pixel information in both the vertical and horizontal directions at the VH transfer stage.

Abstract: A charge-coupled device (CCD) image sensor includes a layer of a semiconductor material having a first conductivity type. A horizontal CCD channel region of a second conductivity type is disposed in the layer of the semiconductor material. The horizontal CCD channel region includes multiple phases that are used to shift photo-generated charge through the horizontal CCD channel region. Distinct overflow drain regions are disposed in the layer of semiconducting material, with an overflow drain region electrically connected to only one particular phase of the horizontal CCD channel region.

Abstract: A drive unit 120 sets a saturation amount in a read period in which charges generated in pixels are read to vertical CCDs to be lower in a combination mode than in an individual mode (see Vsub in count values 22 to 24 in FIG. 6). As a result, excess charges in the pixels are drained to an n-type substrate 11. The drive unit 120 also sets an accumulation period to be shorter in combination mode than in individual mode (see Vsub in each mode in FIG. 6).

Abstract: An image capture device includes a plurality of image capture elements for capturing an object image, a plurality of vertical output lines for reading signals out of the plurality of image capture elements, and a plurality of processing circuits. Each processing circuit includes a first capacitor element having a first electrode connected to one of the plurality of vertical output lines, a differential amplifier having a first input terminal connected to a second electrode of the first capacitor element, a second capacitor element connected between the first input terminal and an output terminal of the differential amplifier, and a first switch configured to control conduction between the first input terminal and the output terminal of the differential amplifier.

Abstract: A solid-state imaging device includes: a plurality of light-receiving elements which are arranged by rows and columns. A driving unit performs a driving, so that a signal packet and a plurality of dummy packets in an identical column are mixed together into a mixed packet in each holding units, charges of the mixed packet are held in a hold unit, the held charges of the mixed packet are vertically transferred to a horizontal transfer unit so that the mixed packet is mixed with a mixed packet of a different hold unit which is vertically transferred from the different hold unit to the horizontal transfer unit.

Abstract: A solid-state imaging device includes: a pixel array unit wherein a unit pixel group with a portion of elements of a unit pixel being shared with a plurality of unit pixels is arrayed in a matrix form, the unit pixel having a detecting unit, a pixel signal generating unit, a transfer unit to transfer the charge, and an initializing unit to initialize the potential of the pixel signal generating unit; and a driving control unit; wherein the driving control unit controls blooming reduction potential which is the transfer control potential supplied to the transfer unit of the unit pixel to be thinned, so that the overflow charge at the detecting unit with the unit pixel to be thinned which has no shared relation with the unit pixel to be read transitions to a state readily transferable to the pixel signal generating unit side of the unit pixel to be thinned.

Abstract: There is disclosed an image sensing apparatus including at least one pixel, a signal read unit, and a saturation detector. The pixel includes a photoelectric converter, a semiconductor region, and a transfer controller which transfers a charge generated in the photoelectric converter to the semiconductor region. The signal read unit is configured to output a signal from the semiconductor region. The saturation detector includes a reset controller which detects a signal generated in the semiconductor region during an exposure period of the photoelectric converter, and resets the photoelectric converter based on the detection result.