Abstract: An image pickup apparatus includes a housing, a first circuit board mounted with an image sensor, a second circuit board mounted with an electric element and is placed opposite to the first circuit board, a heat radiating sheet that contacts the image sensor or the first circuit board and the housing, and a flexible member placed between and contacting the heat radiating sheet and the second circuit board.

Abstract: An image sensor and an image sensing method are provided. The image sensor includes a first pixel circuit, a second pixel circuit, a ramp signal generating circuit, a comparator, and a signal processing circuit. The first pixel circuit has a first floating diffusion node. The second pixel circuit has a second floating diffusion node. The ramp signal generating circuit respectively provides a first ramp signal and a second ramp signal to the first floating diffusion node and the second floating diffusion node during a dark sun detection period. The comparator receives a first node voltage of the first floating diffusion node and a second node voltage of the second floating diffusion node. The signal processing circuit determines whether to output an output signal and determines whether to overwrite a digital value corresponding to a sensing signal according to whether the comparator is triggered.

Abstract: The present invention comprises: a base; a housing disposed at one side of the base; a lens barrel disposed inside the housing; a cover disposed at one side of the housing; a first substrate disposed at the other side of the base; an image sensor which is installed on the first substrate, and disposed below the lens barrel; a diaphragm set which is movably supported inside the housing and which adjusts the amount of light incident to the lens barrel; a first drive unit comprising a first coil and a first magnet which enable the lens barrel and the diaphragm set to move together in the optical axis direction; and a second substrate which is attached to the housing and comprises a plurality of terminals which protrude to the outside as a result of the drive of the first drive unit, wherein the diaphragm set has a second drive unit for driving the diaphragms disposed therein, and the terminals are also connected to the second drive unit.

Abstract: There is provided a laser processing device that performs laser processing on an object made of a birefringent material, the device including: a light source that outputs laser light; a spatial light modulator that modulates the laser light output from the light source; a focusing lens that focuses the laser light toward the object; and a polarized light component control unit that is a function of the spatial light modulator to control polarized light components of the laser light such that the laser light is focused on one point in the object in a Z direction (optical axis direction).

Abstract: Disclosed are devices, systems and methods for capturing an image. In one aspect an electronic camera apparatus includes an image sensor with a plurality of pixel regions. The apparatus further includes an exposure controller. The exposure controller determines, for each of the plurality of pixel regions, a corresponding exposure duration and a corresponding exposure start time. Each pixel region begins to integrate incident light starting at the corresponding exposure start time and continues to integrate light for the corresponding exposure duration. In some example embodiments, at least two of the corresponding exposure durations or at least two of the corresponding exposure start times are different in the image.

Abstract: A photoelectric conversion device includes a pixel including a photoelectric conversion unit configured to output a pulse in response to incidence of a photon, a counting unit including a plurality of counters each configured to count pulses output from the photoelectric conversion unit, and a calculation unit configured to perform calculation processing on a plurality of count values held by the plurality of counters, and an output line connected to the pixel. The calculation unit outputs a determination value indicating a relationship between the plurality of count values. The pixel outputs a pixel signal including a determination value to the output line.

Abstract: Provided is a semiconductor device. The semiconductor device includes a first counter latch circuit configured to receive a count code and to latch the count code according to a comparison result signal; and a second counter latch circuit configured to receive the count code from the first counter latch circuit, and to latch the count code by using a plurality of first latches. The first latches are coupled in series to each other and are configured to operate to sequentially bypass values transmitted to the respective first latches.

Abstract: Some implementations described herein provide pixel sensor configurations and methods of forming the same. In some implementations, one or more transistors of a pixel sensor are included on a circuitry die (e.g., an application specific integrated circuit (ASIC) die or another type of circuitry die) of an image sensor device. The one or more transistors may include a source follower transistor, a row select transistor, and/or another transistor that is used to control the operation of the pixel sensor. Including the one or more transistors of the pixel sensor (and other pixel sensors of the image sensor device) on the circuitry die reduces the area occupied by transistors in the pixel sensor on the sensor die. This enables the area for photon collection in the pixel sensor to be increased.

Abstract: An image sensor includes a first capacitor for sampling a coarse ramp signal, a second capacitor for sampling a sum of a voltage of the first capacitor and a fine ramp signal, and a comparator for generating a comparison signal obtained by comparing a pixel voltage received from a pixel with the voltage of the first capacitor or a voltage of the second capacitor. The image sensor further includes a data output unit for outputting bit data corresponding to the pixel, based on the comparison signal.

Abstract: An image sensor includes a pixel array and a readout circuit. The pixel array includes a first unit pixel region including first, second and third sub-pixel regions having a first color filter, sequentially disposed along a first row line, and sharing a first floating diffusion region, and a second unit pixel region including a first, second and third sub-pixel regions having a second color filter, sequentially disposed along a second row line, and sharing a second floating diffusion region.

Abstract: An image sensor includes a pixel defining pattern in a mesh form, wherein a first division pattern divides a pixel area into two halves, a second division pattern divides the pixel area into two halves, a first diagonal division pattern divides the pixel area into two halves, a second diagonal division pattern divides the pixel area into two halves, and first through eighth photodiodes are arranged in the pixel area so divided.

Abstract: A flexure for a camera module is provided. The flexure includes a dynamic platform to which an image sensor is connected such that the image sensor moves with the dynamic platform. The flexure also includes a static platform connected to a static portion of the camera. The flexure further includes a plurality of flexure arms that mechanically connect the dynamic platform to the static platform. The plurality of flexure arms includes a first flexure arm including one or more signal traces having a first impedance and a base layer having a first width. The plurality of flexure arms includes a second flexure arm including one or more signal traces having a second impedance and a base layer having a second width. The first impedance is greater than the second impedance. The first width is less than the second width. The second flexure arm routes image data from the image sensor.

Abstract: The present disclosure relates to a solid-state imaging device, a method for driving the solid-state imaging device, and an electronic device capable of improving auto-focusing accuracy by using a phase difference signal obtained by using a photoelectric conversion film. The solid-state imaging device includes a pixel including a photoelectric conversion portion having a structure where a photoelectric conversion film is interposed by an upper electrode on the photoelectric conversion film and a lower electrode under the photoelectric conversion film. The upper electrode is divided into a first upper electrode and a second upper electrode. The present disclosure can be applied to, for example, a solid-state imaging device or the like.

Abstract: An image processor according to the present disclosure includes: an image segmentation processing section to generate a plurality of first map data on the basis of first image map data including a plurality of pixel values, the plurality of first map data having arrangement patterns of pixel values different from each other and including pixel values located at positions different from each other; an interpolation processing section to generate a plurality of second map data by determining a pixel value at a position where no pixel value is present in each of the plurality of first map data with use of interpolation processing; and a synthesis processing section to generate third map data by generating, on the basis of pixel values at positions corresponding to each other in the plurality of second map data, a pixel value at a position corresponding to the positions.

Abstract: An electromagnetic wave detection apparatus comprises an irradiator configured to emit electromagnetic waves; a switch comprising an action surface with a plurality of pixels disposed thereon, the switch being configured to switch each pixel between a first state of causing electromagnetic waves, including reflected waves, from an object, of electromagnetic waves irradiated from the irradiator, incident on the action surface to travel in a first direction and a second state of causing the electromagnetic waves incident on the action surface to travel in a second direction; a first detector configured to detect the electromagnetic waves that travel in the first direction; and a second detector configured to detect the electromagnetic waves that travel in the second direction. Also, the switch is configured to switch each of the plurality of pixels between the first and second states according to an irradiation region of the electromagnetic waves emitted from the irradiator.

Abstract: An image sensor chip with depth information is provided. The image sensor chip includes an SPAD array, a time-to-digital converter module, a storage circuit, and a data processing circuit. The SPAD array includes a plurality of image sensor units, and each of the image sensor units includes a plurality of SPAD units and a decision circuit, wherein each of the SPAD units outputs a photon detection result within a scan period, and the decision circuit generates an image-sensing signal based on the photon detection results. The time-to-digital converter module generates a plurality of first time data in response to the image-sensing signals. The storage circuit stores the first time data temporarily. The data processing unit reads the first time data from the storage circuit and generates a plurality of second time data in response to the first time data.

Abstract: An imaging device includes a pixel array including a 4×4 grouping of pixel circuits. The 4×4 grouping of pixel circuits includes four rows and four columns of the pixel array. A plurality of bitlines includes a first bitline, a second bitline, a third bitline, and a fourth bitline. Each one of the first, second, third, and fourth bitlines is coupled to a respective four pixel circuits in the 4×4 grouping of pixel circuits. Each one of the first, second, third, and fourth bitlines is coupled to all four of the rows and to all four of the columns of the 4×4 grouping of pixel circuits.

Abstract: A method and a system are described for dynamic range enhancement in CMOS image sensors using charge-transfer amplification. The method involves resetting a pixel array and other nodes of the CMOS image sensor. It involves receiving light for a predetermined duration on the pixel array layered with photodiodes. It involves configuring an integration time of incident light at the photodiodes 104, for a desired exposure and releasing photoelectrons to form a current signal. An equivalent voltage signal is built allowing a voltage build-up by charging a storage capacitance, and thereafter adjusting the voltage build-up by adjusting a ratio between the storage capacitance and amplification capacitance. The voltage signal is then integrated with the current signal in order to obtain an integrated signal of amplified gain, and the method involves generating a resultant electronic signal with a higher amplification factor and an enhanced gain as compared to the input electronic signal.

Abstract: The present disclosure relates to an imaging device and an electronic device that make it possible to obtain a better pixel signal. A photoelectric conversion part that converts received light into a charge; a holding part that holds a charge transferred from the photoelectric conversion part; and a light shielding part that shields light between the photoelectric conversion part and the holding part are provided. The photoelectric conversion part, the holding part, and the light shielding part are formed in a semiconductor substrate. The light shielding part of a transfer region that transfers the charge from the photoelectric conversion part to the holding part is formed as a non-penetrating light shielding part that does not penetrate the semiconductor substrate. The light shielding part other than the transfer region is formed as a penetrating light shielding part that penetrates the semiconductor substrate. The present technology is applicable to an imaging device.

Abstract: An imaging element (100) includes a pixel array (110) in which pixels (130) are placed in a two-dimensional array, the pixel including a photoelectric conversion element; and a polarization-wavelength separation lens array (120) opposed to the pixel array (110), the polarization-wavelength separation lens array (120) including polarization-wavelength separation lens (160) placed in a two-dimensional array, the polarization-wavelength separation lens (160) including a plurality of microstructures for condensing incident light at different positions on the pixel array (110) according to the polarization direction and wavelength components of the incident light.

Abstract: A camera module according to an embodiment includes a printed circuit board; an infrared filter disposed on an upper surface of the printed circuit board; and an image sensor disposed under a lower surface of the printed circuit board, wherein the printed circuit board includes: an insulating layer including a cavity overlapping at least a part of the infrared filter and at least a part of the image sensor in an optical axis direction; and a circuit pattern buried in the insulating layer and connected to a terminal of the image sensor; and wherein a shape of the cavity is different from a shape of the image sensor.

Abstract: An imaging device includes a plurality of unit pixels or pixels, with each pixel separated from every other unit pixel by an isolation structure. Each unit pixel includes a photoelectric conversion unit, a pixel imaging signal readout circuit, and an address event detection readout circuit. A first transfer transistor selectively connects the photoelectric conversion unit to the pixel imaging signal readout circuit, and a second transfer transistor selectively connects the photoelectric conversion unit to the address event detection readout circuit. The photoelectric conversion unit, the pixel imaging signal readout circuit, the address event detection readout circuit, and the first and second transfer transistors for a given pixel are located within a pixel area defined by the isolation structure. The isolation structure may be in the form of a full thickness dielectric trench isolation structure.

Abstract: The present technology relates to a solid-state imaging device and electronic apparatus capable of relieving wiring failure with less redundancy. The solid-state imaging device includes a pixel array unit in which a plurality of pixels is two-dimensionally arranged in a matrix, one redundant wiring provided for n number of signal lines that transmit a pixel signal from the pixels, and one or more redundant switches that connect one signal line and a redundant wiring. The present technology can be applied to, for example, a solid-state imaging device, or the like.

Abstract: An image sensor is provided for obtaining an ultra-high resolution image. The image sensor includes a plurality of two-dimensionally arranged pixels, each of the plurality of pixels including a first meta-photodiode that selectively absorbs light of a red wavelength band, a second meta-photodiode that selectively absorbs light in a green wavelength band, and a third meta-photodiode that selectively absorbs light of a blue wavelength band. A width of each of the plurality of pixels of the image sensor may be less than a diffraction limit.

Abstract: An image capturing module including an image capturing unit, a lens set and a first adhesive layer is provided. The lens set is disposed on the image capturing unit. The lens set has a light incident surface and a light emitting surface opposite to each other and has at least one side surface, the light emitting surface faces the image capturing unit, and the side surface is connected between the light incident surface and the light emitting surface. The first adhesive layer covers the side surface of the lens set. In addition, a manufacturing method of the image capturing module is also provided.

Abstract: In some aspects, a spectral image capturing device may receive, from a filter array, visible light and infrared light, wherein the filter array includes a quantity of color filters to block the infrared light and pass the visible light and a quantity of infrared filters to block the visible light and pass the infrared light. The spectral image capturing device may produce, using an image sensor that includes an array of pixel sensors, a spectral image based at least in part on the visible light and the infrared light passed by the filter array. Numerous other aspects are provided.

Abstract: To realize miniaturization of a pixel, reduction in noise, and high quantum efficiency, and to improve short-wavelength sensitivity while suppressing inter-pixel interference and variations for each pixel. According to the present disclosure, there is provided an imaging device including: a first semiconductor layer formed in a semiconductor substrate; a second semiconductor layer of a conductivity type opposite to a conductivity type of the first semiconductor layer formed on the first semiconductor layer; a pixel separation unit which defines a pixel region including the first semiconductor layer and the second semiconductor layer; a first electrode which is connected to the first semiconductor layer from one surface side of the semiconductor substrate; and a second electrode which is connected to the second semiconductor layer from a light irradiation surface side that is the other surface of the semiconductor substrate, and is formed to correspond to a position of the pixel separation unit.

Abstract: A semiconductor device that has low power consumption and is capable of performing a product-sum operation is provided. The semiconductor device includes first and second cells, a first circuit, and first to third wirings. Each of the first and second cells includes a capacitor, and a first terminal of each of the capacitors is electrically connected to the third wiring. Each of the first and second cells has a function of feeding a current based on a potential held at a second terminal of the capacitor, to a corresponding one of the first and second wirings. The first circuit is electrically connected to the first and second wirings and stores currents I1 and I2 flowing through the first and second wirings. When the potential of the third wiring changes and accordingly the amount of current of the first wiring changes from I1 to I3 and the amount of current of the second wiring changes from I2 to I4, the first circuit generates a current with an amount I1?I2?I3+I4.

Abstract: An imaging device 100 includes a pixel array PA. A first period, a third period, and a second period appear in this order in a first frame. During the first period, pixel signal readout is performed on a first row in the pixel array PA. During the second period, pixel signal readout is performed on a second row in the pixel array PA. Each of the first period and the second period is a high-sensitivity exposure period. The third period is a low-sensitivity exposure period.

Abstract: An optical filter for an optical device comprises a substrate and a multilayer film having a plurality of layers with different refractive indexes formed on at least one side of the substrate. The multilayer film has a structure in which a first layer and a second layer are alternately stacked. The first layer has a refractive index of 1.2 or more and 2.5 or less, and the second layer has a refractive index of 3.2 or more and 4.3 or less in a wavelength range of 6 ?m to 10 ?m. The optical filter includes a wavelength range having an average transmittance of 70% or more with a width of 50 nm or more in a wavelength range of 6 ?m to 10 ?m, and has a maximum transmittance of 10% or more in a wavelength range of 12.5 ?m to 20 ?m.

Abstract: A digital-to-analog converter circuit that creates an analog waveform from an input digital waveform. Operating the circuit comprises using the input digital waveform to 1) operate a charge control switch to set a charge time period, 2) operate a discharge control switch to set a discharge time period, 3) set a charge current magnitude using a charge gain, and 4) set a discharge current magnitude using a discharge gain. A charge source electrically charges a load capacitor during the charge time period (i.e., the charge mode). A discharge source electrically discharges the load capacitor during the discharge time period (i.e., the discharge mode). A circuit output transmits the analog waveform defined by the charge mode and the discharge mode. A charge current magnitude greater than the discharge current magnitude produces an upward-sloping analog waveform. A charge current magnitude less than the discharge current magnitude produces a downward-sloping analog waveform.

Abstract: A solid-state image sensor with quasi-global shutter function and a method of operating the same. A row control unit of the image sensor is configured to determine exceptional pixel rows for which a pre-scheduled global exposure control pulse would fully or partially coincide with a sequentially applied readout control pulse that is selecting a number of pixel rows of the pixel array to be read out. The pre-scheduled global exposure control pulse is applied simultaneously to all but the exceptional pixel rows and delayed and/or advanced versions of the exposure control pulse are applied to the exceptional pixel rows.

Abstract: A display device includes: a first closed-bottom lens tube including a first display part on the closed bottom for displaying a first image; a second closed-bottom lens tube including a second display part on the closed bottom for displaying a second image; an adjustment mechanism including a first rod that extends from the first lens tube and a second rod that extends from the second lens tube and is rotatably connected relative to the first rod; and an image maintainer that, in accordance with the angle of rotation of the first and second rods of the adjustment mechanism, rotates the first and second display parts relative to the first and second lens tubes to bring the horizontal directions of the first and second display parts closer to the arrangement direction of the first and second lens tubes.

Abstract: A photoelectric conversion apparatus comprising: pixels; L (L?3) vertical signal lines disposed on each pixel column; M (M?2) selection circuits disposed in each pixel, each of the selection circuits respectively connecting one of the pixels to a different vertical signal line; a vertical scanning circuit configured to scan the selection circuits; and a control unit. The control unit sets first operation mode in which the vertical scanning circuit performs a single read scanning operation at a time, and a second operation mode in which the vertical scanning circuit performs multiple read scanning operations at a time. In the first operation mode, the control unit uses first selection circuit out of the M selection circuits for scanning operation. In the second operation mode, the control unit uses a second selection circuit, which is different from the first selection circuit, out of the M selection circuits for scanning operation.

Abstract: An imaging device includes: a solid-state imaging element having a plurality of pixel cells arranged in a matrix; and a control part configured to control the solid-state imaging element. The pixel cells each include an avalanche photodiode, a floating diffusion part configured to accumulate electric charges, a transfer transistor connecting a cathode of the avalanche photodiode and the floating diffusion part, and a reset transistor for resetting electric charges accumulated in the floating diffusion part. The control part controls the reset transistor to discharge electric charges exceeding a predetermined electric charge amount, of electric charges accumulated in the floating diffusion part from the cathode of the avalanche photodiode via the transfer transistor.

Abstract: An optical image lens assembly includes five lens elements which are, in order from an object side to an image side along an optical path: a first lens element, a second lens element, a third lens element, a fourth lens element and a fifth lens element. Each of the five lens elements has an object-side surface facing toward the object side and an image-side surface facing toward the image side. The object-side surface of the first lens element is convex in a paraxial region thereof. The image-side surface of the third lens element is concave in a paraxial region thereof. The object-side surface of the fourth lens element is concave in a paraxial region thereof, and the image-side surface of the fourth lens element is convex in a paraxial region thereof.

Abstract: Implementations of a semiconductor device may include a photodiode included in a second epitaxial layer of a semiconductor substrate; light shield coupled over the photodiode; and a first epitaxial layer located in one or more openings in the light shield. The first epitaxial layer and the second epitaxial layer may form a single crystal.

Abstract: Provided is a photoelectric conversion device including: a photoelectric conversion unit including one microlens and a plurality of photoelectric conversion elements, a readout circuit unit configured to read out a first signal based on charges accumulated by a first photoelectric conversion element of the plurality of photoelectric conversion elements and a second signal based on charges accumulated by a second photoelectric conversion element of the plurality of photoelectric conversion elements, and a signal processing unit configured to, according to a determination result based on at least one of the first signal and the second signal, output a third signal obtained by adding the first signal and the second signal or output a fourth signal by replacing the third signal with the fourth signal different from the third signal.

Abstract: An electronic device includes a pixel array that outputs a raw image including color pixels and specific pixels, a logic circuit that outputs a first binned image by performing first binning on pixels in a row direction for each unit kernel of the raw image, and a processor that outputs a second binned image by performing second binning on the first binned image. When a unit kernel includes at least one of the specific pixels, a column to which the at least one specific pixel belongs is read out at a readout timing different from a readout timing of a column to which none of the specific pixels belong and undergoes the first binning. The second binning combines a third binned image of the column to which none of the specific pixels belong with a fourth binned image of the column to which the at least one specific pixel belongs.

Abstract: Semiconductor device package assemblies and associated methods are disclosed herein. The semiconductor device package assembly includes (1) a base component having a front side and a back side, the base component having a first metallization structure at the front side; (2) a semiconductor device package having a first side, a second side with a recess, and a second metallization structure at the first side and a contacting region exposed in the recess at the second side; (3) an interconnect structure at least partially positioned in the recess at the second side of the semiconductor device package; and (4) a thermoset material or structure between the front side of the base component and the second side of the semiconductor device package. The interconnect structure is in the thermoset material and includes discrete conductive particles electrically coupled to one another.

Abstract: There is provided a pixel circuit for performing analog operation including a photodiode, a first temporal circuit, a second temporal circuit and an operation circuit. Within a first interval, the photodiode detects first light energy to be stored in the first temporal circuit. Within a second interval, the photodiode detects second light energy to be stored in the second temporal circuit. Within an operation interval, the first temporal circuit outputs a first detection signal having a first pulse width according to the first light energy and outputs a second detection signal having a second pulse width according to the second light energy for being calculated by the operation circuit.

Abstract: The present exemplary embodiment relates to a camera module comprising: a substrate; an image sensor disposed on the substrate; a base disposed on the substrate; a lens holder disposed on the base; a lens module disposed in the lens holder; a liquid lens module coupled to the lens module; and an adhesive for coupling the lens holder and the base, wherein the lens holder comprises a groove formed between the base and the liquid lens module.

Abstract: There is provided a pixel circuit capable of outputting time difference data and image data, and including an image circuit and a difference circuit. The image circuit is used to record and output detected light energy of a first interval as the image data. The difference circuit is used to record and output a variation of detected light energy between the first interval and a second interval as the time difference data. The pixel circuit selects to output at least one of the time difference data and the image data.

Abstract: An imaging apparatus includes an image sensor, an acquiring unit, and at least one processor. The image sensor is capable of acquiring, from an imaging surface that captures an object image formed by an optical system, first and second paired signals which are respectively acquired by pupil division in first and second directions different from each other. The acquiring unit acquires first and second defocus amounts from phase differences between the first paired signals and between the second paired signals, respectively. The at least one processor functions as a detecting unit and a deciding unit. The detecting unit detects an imaging object in an imaging frame. The deciding unit decides, based on the detected imaging object, at least one defocus amount to be used in focus control for the optical system from the first and second defocus amounts.

Abstract: A Digital-to-Analog Converter (DAC) is provided. The DAC includes a code converter circuit configured to sequentially receive first digital control codes for controlling N digital-to-analog converter cells. N is an integer greater than one. The code converter circuit is further configured to convert the first digital control codes to second digital control codes. Additionally, the DAC includes a bit-shifter circuit configured to receive shift codes for the second digital control codes. The shift codes are obtained using dynamic element matching and indicate a respective circular shift by ri bit positions for the i-th second digital control code, wherein ri is an integer smaller than N?1. The bit-shifter circuit is further configured to generate third digital control codes by circularly shifting the second digital codes based on the shift codes.

Abstract: An image sensor (102) includes a photoelectric conversion unit (10) that generates a photoelectric charge, a sense node (SN) (21) that is connected to the photoelectric conversion unit (10) and holds the photoelectric charge generated by the photoelectric conversion unit (10), a discharge transistor (15) for discharging the photoelectric charge held by the sense node (SN) (21) to the outside, and a voltage control unit (114) that controls a voltage value of an off voltage to be applied to a gate of the discharge transistor (15) when the discharge transistor (15) is turned off.

Abstract: In a display system, an imaging apparatus takes a video by shifting pixels in units of frames by moving a solid state image sensing device or an optical member physically. A projection video display apparatus acquires a video taken by the imaging apparatus, optically performs pixel shift corresponding to pixel shift performed in the imaging apparatus at the time of imaging, and projects the video acquired.

Abstract: A light emitting diode (LED) stack for a display including a substrate, a first LED stack disposed on the substrate, a second LED stack disposed on the first LED stack, a third LED stack disposed on the second LED stack, a first color filter interposed between the first LED stack and the second LED stack, and a second color filter interposed between the second LED stack and the third LED stack, in which the second LED stack and the third LED stack are configured to transmit light generated from the first LED stack to the outside, and the third LED stack is configured to transmit light generated from the second LED stack to the outside.

Abstract: Spectral performance in a wide wavelength range is improved. A solid-state imaging device according to an embodiment includes: a pixel array unit in which a plurality of photoelectric conversion elements (PD) are arranged in a two-dimensional lattice form; a plurality of diffraction gratings provided corresponding one-to-one to light-receiving surfaces of the plurality of photoelectric conversion elements; and pixel circuits configured to generate pixel signals on the basis of charge accumulated in the photoelectric conversion elements, wherein a period of a first diffraction grating positioned at a first imaging height is different from a period of a second diffraction grating positioned at a second imaging height different from the first imaging height.

Abstract: An arithmetic logic unit (ALU) includes a front end latch stage coupled to a signal latch stage coupled to a Gray code (GC) to binary stage. First inputs of an adder stage are coupled to receive outputs of the GC to binary stage. Outputs of the adder stage are generated in response to the first inputs and second inputs of the adder stage. A pre-latch stage is coupled to latch outputs of the adder stage. A feedback latch stage is coupled to latch outputs of the pre-latch stage. The second inputs of the adder stage are coupled to receive outputs of the feedback latch stage. The feedback stage includes first conversion gain feedback latches configured to latch outputs of the pre-latch stage having a first conversion gain and second conversion gain feedback latches configured to latch outputs of the pre-latch stage having a second conversion gain.