Abstract: A system includes a plurality of satellites orbiting around a celestial body in a plurality of orbital planes. Each satellite includes an imaging device having a field of view (FOV) to capture an image of a sky that includes celestial image features of resident space object (RSO), stars, and/or planets. The satellite processor is configured to input the image data for each image into a pre-processing software pipeline to generate for each image a contrast-enhanced image data replica of each image, and an enhanced image data replica of each image, to receive from an output of a known-unknown RSO split data processing pipeline, a determination that a candidate RSO is a known RSO stored in an RSO catalog, or an unknown RSO, and to assign to the candidate RSO based on the determination, an RSO ID of the known RSO listed in the RSO catalog, or a new RSO ID.

Abstract: Image sensor systems are disclosed that include charge coupled device (CCD) pixels integrated with CMOS readout circuitry via separately bonded substrates. According to some embodiments, columns of image sensing pixels on a first substrate are arranged with overlapping gate structures to facilitate charge transfer between the pixels. At least one pixel is coupled to a first conductive pad that contacts (or is melded with) a second conductive pad from a second substrate bonded to the first substrate. The second substrate includes a readout circuit using one or more CMOS devices coupled to the second conductive pad to receive the accumulated charge from a given column of pixels. The resulting photodetector signal from the accumulated charge can be, for instance, amplified via a source follower component and ultimately read out to a column amplifier, and subjected to further processing and/or use in a given downstream system.

Abstract: Solid-state imaging devices, methods of driving solid-state imaging devices, and electronic devices are disclosed. In one example, a solid-state imaging device includes a pixel array unit in which pixels are two-dimensionally arranged in a matrix. At least some pixel rows include a first signal line configured to transmit a drive signal for driving a first transfer transistor of a first pixel in units of microlenses having a color filter of a first color, a second signal line configured to transmit a drive signal for driving a second transfer transistor of a second pixel different from the first pixel, and a third signal line configured to transmit a drive signal for driving a third transfer transistor of a third pixel in units of microlenses having a color filter of a second color different from the first color.

Abstract: An integrated circuit includes a photodetection region configured to receive incident photons. The photodetection region is configured to produce a plurality of charge carriers in response to the incident photons. The integrated circuit also includes at least one charge carrier storage region. The integrated circuit also includes a charge carrier segregation structure configured to selectively direct charge carriers of the plurality of charge carriers into the at least one charge carrier storage region based upon times at which the charge carriers are produced.

Abstract: A transmission device according to an aspect of the present disclosure communicates with a reception device via a control data bus. The transmission device includes a generation unit that generates an interrupt request, and a transmission section that transmits data to the reception device via the control data bus. The interrupt request includes at least an identification bit to identify a type of transmission data, an information bit for the transmission data, and the transmission data.

Abstract: An integrated circuit includes a photodetection region configured to receive incident photons. The photodetection region is configured to produce a plurality of charge carriers in response to the incident photons. The integrated circuit includes a charge carrier storage region. The integrated circuit also includes a charge carrier segregation structure configured to selectively direct charge carriers of the plurality of charge carriers directly into the at least one charge carrier storage region based upon times at which the charge carriers are produced.

Abstract: Embodiments of a hybrid imaging sensor that optimizes a pixel array area on a substrate using a stacking scheme for placement of related circuitry with minimal vertical interconnects between stacked substrates and associated features are disclosed. Embodiments of maximized pixel array size/die size (area optimization) are disclosed, and an optimized imaging sensor providing improved image quality, improved functionality, and improved form factors for specific applications common to the industry of digital imaging are also disclosed. Embodiments of the above may include systems, methods and processes for staggering ADC or column circuit bumps in a column or sub-column hybrid image sensor using vertical interconnects are also disclosed.

Abstract: A solid-state imaging apparatus includes: an imaging section that acquires image data; and a control section that causes DNN processing on the image data and readout processing of the image data to be executed in parallel and causes noise reduction processing to be executed on the image data that is read out when the DNN processing on the image data and the readout processing of the image data are being executed in parallel.

Abstract: A signal processing system for an imaging device is provided. The signal processing system includes: a plurality of readout circuitries that are connected in parallel, where each readout circuitry includes: one or more interface circuits to receive an analog signal; an analog-to-digital converter (ADC) circuit to convert the analog signal to a digital signal; and a plurality of switches coupled between the ADC circuit and a plurality of storage circuits, where the plurality of switches includes a first switch and a second switch; a controller to: (i) control the first switch to decouple the ADC circuit from a first storage circuit, where the first storage circuit stores a previous digital signal of a previous iteration; and (ii) control the second switch to couple the ADC circuit to the second storage circuit, where the second storage circuit stores a current digital signal; and a transmitter to transmit the previous digital signal.

Abstract: An exemplary method of imaging tissue of a subject using a rolling shutter imager to provide a video stream comprises: sequentially resetting a plurality of rows of pixels of the rolling shutter imager from a first row to a last row; transitioning a liquid crystal shutter from a closed state to an open state; after the liquid crystal shutter is transitioned into the open state and after resetting the last row, illuminating the tissue of the subject with an illumination light for an illumination period to accumulate charge at the plurality of rows of pixels, and after the illumination period ends, sequentially reading the accumulated charge at the rows of pixels from the first row to the last row; generating an image frame from the sequentially read accumulated charge at the plurality of rows of pixels; and adding the image frame to the video stream.

Abstract: A photodetection device according to the present disclosure includes: a light-receiving pixel; a power supply terminal; a ground terminal; a switch; and a first discharge circuit. The light-receiving pixel includes a light receiver that generates electric charge corresponding to an amount of received light. The switch includes a first terminal and a second terminal. The first terminal is coupled to a first node led to the light receiver. The second terminal is coupled to a second node led to the power supply terminal. The switch couples the first node and the second node by being turned on. The first discharge circuit is coupled to the first node and a third node led to the ground terminal. The first discharge circuit is configured to discharge electricity from the third node toward the first node.

Abstract: A method and system for aligning exposure center points of multiple cameras in a VR system are provided. The method includes: acquiring image data of a first type frame according to a preset frame rate; adjusting VTS data of the first type frame, the VTS data changing with the change of the exposure parameters so as to fix a time interval between an exposure center point of the first type frame and an FSIN synchronization signal in a VR system; acquiring image data of a second type frame according to the preset frame rate; and adjusting VTS data of the second type frame according to the VTS data of the first type frame, and fixing a time interval between an exposure center point of the second type frame and the FSIN synchronization signal so as to complete the alignment of exposure center points of the cameras.

Abstract: Systems, methods, and computer-readable media for feedback on and improving the accuracy of super-resolution imaging. In some embodiments, a low resolution image of a specimen can be obtained using a low resolution objective of a microscopy inspection system. A super-resolution image of at least a portion of the specimen can be generated from the low resolution image of the specimen using a super-resolution image simulation. Subsequently, an accuracy assessment of the super-resolution image can be identified based on one or more degrees of equivalence between the super-resolution image and one or more actually scanned high resolution images of at least a portion of one or more related specimens identified using a simulated image classifier. Based on the accuracy assessment of the super-resolution image, it can be determined whether to further process the super-resolution image. The super-resolution image can be further processed if it is determined to further process the super-resolution image.

Abstract: A camera optical lens is provided, including, from an object side to an image side in sequence: a first, second, third, fourth and fifth lens respectively having positive, negative, negative, positive and negative refractive power, which satisfies conditions: ?0.17?f1/f2??0.12; 1.80?d1/d2?2.20; 0.15?d6/d8?0.20; 8.00?(R3+R4)/(R3?R4)?10.00. f1 and f2 respectively denote focal length of the first and second lens; d1 denotes on-axis thickness of the first lens; d2, d6 and d8 respectively denote on-axis distance from image-side surface of the first lens to object-side surface of the second lens, from image-side surface of the third lens to object-side surface of the fourth lens and from image-side surface of the fourth lens to object-side surface of the fifth lens; R3 and R4 respectively denote curvature radius of object-side surface and image-side surface of the second lens. The camera optical lens can satisfy design requirement of large aperture, wide-angle and ultra-thinness while having good optical functions.

Abstract: In one example, an apparatus comprises a photodiode, a charge storage unit, and a processing circuits configured to: transfer overflow charge from the photodiode to the charge storage unit to develop a first voltage; compare the first voltage against a first ramping threshold voltage to generate a first decision; generate, based on the first decision, a first digital value; transfer residual charge from the photodiode to the charge storage unit to develop a second voltage; compare the second voltage against a static threshold voltage to determine whether the photodiode saturates to generate a second decision; compare the second voltage against a second ramping threshold voltage to generate a third decision; generate, based on the third decision, a second digital value; and output, based on the second decision, one of the first digital value or the second digital value to represent an intensity of light received by the photodiode.

Abstract: A solid-state imaging device according to an embodiment of the present disclosure includes two or more pixels. The pixels each include a photoelectric converter, a charge holding section, and a transfer transistor. The charge holding section holds electric charge transferred from the photoelectric converter. The transfer transistor transfers electric charge from the photoelectric converter to the charge holding section. The pixels each further include a light blocking section that is disposed in a layer between the photoelectric converter and the charge holding section. The light blocking section has an opening which a vertical gate runs through. The pixels each further include a charge blocking section that blocks transfer of electric charge to the transfer transistor via a region between an edge, of the opening, closer to the charge holding section and the vertical gate.

Abstract: A pixel array of an image sensor includes a plurality of pixel groups. Each pixel group includes a plurality of unit pixels adjacent to each other and respectively including photoelectric conversion elements disposed in a semiconductor substrate, a color filter shared by the plurality of unit pixels, and a plurality of microlenses disposed on the color filter and having sizes different from each other such that the plurality of microlenses respectively focus an incident light to the photoelectric conversion elements included in the plurality of unit pixels. Deviations of sensing sensitivity of unit pixels are reduced and quality of images captured by the image sensor is enhanced by adjusting sizes of microlenses.

Abstract: An imaging module includes an imager having an optical member on a light receiving surface, an electronic component having a front surface facing the same direction as the one to which an incidence surface of the optical member faces, a resin portion that has a first surface flush with the incidence surface of the optical member and the front surface of the electronic component, and a second surface that is a surface on a side opposite to the first surface while having the imager and the electronic component being embedded therein such that the incidence surface and the front surface are exposed to the first surface, an external connection terminal provided on the second surface, and a through wiring that extends through the resin portion to connect at least one of the imager and the electronic component with the external connection terminal.

Abstract: An image sensor including: a pixel array including pixels each pixel including a photoelectric conversion element, a transmission transistor to transmit photocharges generated by the photoelectric conversion element to a floating diffusion node, and a reset transistor to reset the floating diffusion node based on a pixel power voltage; and a row driver to control the pixels, wherein the row driver includes a transmission control signal generator to provide a transmission control signal to the transmission transistor, wherein the transmission control signal generator includes: a first transistor to which a first voltage is applied; a second transistor connected to the first transistor; a third transistor to which a second voltage is applied, the second voltage being higher than the first voltage; and a fourth transistor connected to the third transistor, wherein an ON resistance of the second transistor is different from an ON resistance of the first transistor.

Abstract: A display driving circuit includes a light emitting assembly which includes a first control switch having a first terminal connected to a cathode of the light emitting unit, a second terminal connected to a common terminal, and a control terminal connected to a first signal wire to provide a first control signal and a second control switch having a first terminal connected to a charging terminal, a second terminal connected to an anode of the light emitting unit and a control terminal connected to a second signal wire to provide a second control signal. When the light emitting unit is turned off, the first control switch disconnects the cathode of the light emitting unit and the common terminal in response to the first control signal, and the second control switch disconnects the anode of the light emitting unit and the charging terminal in response to the second control signal.

Abstract: The signal quality of a solid-state imaging element configured to detect address events is enhanced. The solid-state imaging element has open pixels and light-blocked pixels arrayed therein. In the solid-state imaging element, the open pixels each detect whether or not an amount of change in incident light amount exceeds a predetermined threshold, and output a detection signal indicating a result of the detection. On the other hand, in the solid-state imaging element, the light-blocked pixels each output a correction signal based on an amount of noise generated in the open pixels each configured to detect whether or not an amount of change in incident light amount exceeds the predetermined threshold and to output a detection signal indicating a result of the detection.

Abstract: An organic device comprising first and second conductive line, an insulator arranged above the first and second conductive lines, a first electrode arranged above the insulator, an organic layer arranged above the first electrode, a second electrode arranged above the organic layer, a first via including a first conductor connecting the first conductive line and the first electrode, and a second via including a second conductor connecting the second conductive line and the second electrode, is provided. An upper portion of the first via is filled with the first conductor. An upper portion of the second via includes a region which is not filled with the second conductor and covered by the second conductor. An inner wall of the second conductor along the second via includes a region without the organic layer in contact with the second electrode.

Abstract: A gimbal control method includes determining a current state of a follow-configuration button, determining a current follow coefficient based on the current state of the follow-configuration button, and controlling a gimbal to follow a target object according to the current coefficient. The follow-configuration button corresponds to a plurality of states, and each state corresponds to a different follow coefficient.

Abstract: A circuital system that includes a differential low-pass filter having a differential output and operable in a first voltage domain. Some embodiments include a differential integrator including a differential input and a differential output, and operable in a second voltage domain different from the first voltage domain. Some embodiments include a pair of AC coupling capacitors coupling the differential output of the differential low-pass filter to the differential input of the differential integrator.

Abstract: Provided is a radiographic imaging device including: a first hardware processor; a sensor that includes multiple semiconductor elements arranged two-dimensionally and multiple switch elements respectively connected to the semiconductor elements; a gate driver that causes each of the switch elements of the sensor to switch between a conductive state and non-conductive state so as to release charge from each of the semiconductor elements; and a reader that performs readout of a signal value according to an amount of the charge released by the each of the semiconductor elements of the sensor. The first hardware processor sets an imaging condition that affects a dose of radiation reaching the sensor, selects a gate readout pattern according to the set imaging condition among different gate readout patterns, and drives the gate driver and the reader using the selected gate readout pattern.

Abstract: Example embodiments relate to image sensors for time delay and integration imaging and methods for imaging using an array of photo-sensitive elements. One example image sensor for time delay and integration imaging includes an array of photo-sensitive elements that includes a plurality of photo-sensitive elements arranged in rows and columns of the array. Each photo-sensitive element includes an active layer configured to generate charges in response to incident light on the active layer. Each photo-sensitive element also includes a charge transport layer. Further, each photo-sensitive element includes at least a first and a second gate, each separated by a dielectric material from the charge transport layer. The array of photo-sensitive elements is configured such that the second gate of a first photo-sensitive element and the first gate of a second photo-sensitive element in a direction along a column of the array are configured to control transfer of charges.

Abstract: An imaging apparatus includes: a controller that performs first synchronization control of outputting a first synchronization signal at a first timing after receiving an instruction of continuous imaging, outputting a second synchronization signal at a second timing after elapse of a first time period from the first timing, and outputting the second synchronization signal every time a second time period longer than the first time period elapses after the second timing; and an imaging unit that starts reading of a signal from an imaging element by a rolling shutter method at a third timing at which an input of the second synchronization signal is received after the second timing, and starts exposure of the imaging element by the rolling shutter method at a fourth timing before the third timing so that an interval between the fourth and third timings is equal to a length of an exposure time period.

Abstract: An imaging device includes an imaging unit including a plurality of pixels, respectively including photoelectric converters and charge accumulation nodes that accumulate signal charge. The imaging unit outputs image data based on signals corresponding to the signal charge accumulated in the charge accumulators. The imaging device includes an image processing unit that processes the image data output by the imaging unit. The imaging unit sequentially outputs a plurality of pieces of image data in one frame period by performing readout nondestructively. The image processing unit generates difference image data by determining a difference between two pieces of image data, selects output image data from initial image data and the difference image data, and combines the output image data and normal readout image data included in the plurality of pieces of image data, to generate combination-result image data.

Abstract: An imaging system includes an image sensor configured to obtain first image data, based on a received light; and a processing circuit configured to determine an operating mode of the image sensor, among a first mode and a second mode, based on an illumination and a dynamic range corresponding to the obtained first image data. The image sensor includes a first sub-pixel configured to sense a target light corresponding to a target color, in the first mode, convert the target light sensed during a first exposure time, into a first signal, and in the second mode, convert the target light sensed during a second exposure time longer than the first exposure time, into a second signal.

Abstract: A solid-state imaging device includes a plurality of pixels in a two-dimensional array. Each pixel includes a photoelectric conversion element that converts incident light into electric charge, and a charge holding element that receives the electric charge from the photoelectric conversion element, and transfers the electric charge to a corresponding floating diffusion. The charge holding element further includes a plurality of electrodes.

Abstract: A photoelectric conversion device includes a pixel unit having pixels arranged to form rows and columns, each including a transfer transistor that transfers charge in a photoelectric converter to an output unit, and a pixel control unit that controls the pixels. The pixel control unit is configured to supply a control signal in accordance with an exposure period individually defined for pixel blocks of the pixel unit to pixels of each pixel block and read out, from each pixel, a first signal obtained when the photoelectric converter is in a reset state and a second signal based on charge accumulated in the photoelectric converter during the exposure period. A period excluding both the exposure period and a readout period of the second signal corresponds to a reset period of the photoelectric converter. The transfer transistor is off in a readout period of the first and second signals.

Abstract: Provided is an imaging unit including an imaging section that includes a pixel capable of performing charge accumulation a plurality of times in response to an imaging instruction for generating one frame of image data; a storage section that stores a pixel signal based on output from the pixel; an updating section that updates the pixel signal already stored in the storage section by performing an integration process to integrate the pixel signal output from the pixel as a result of a new charge accumulation and the pixel signal already stored in the storage section; and a control section that controls whether the updating section performs the update, for each of a plurality of pixel groups that each include one or more pixels.

Abstract: The development of a region of interest (ROI) video frame that includes only ROIs of interest and not other elements and providing the ROI video frames in a single video stream simplifies the development of gallery view continuous presence displays. ROI position and size information metadata can be provided or subpicture concepts of the particular codec can be used to separate the ROIs in the ROI video frame. Metadata can provide perspective/distortion correction values, speaker status and any other information desired about the participant or other ROI, such as name. Only a single encoder and a single decoder is needed, simplifying both transmitting and receiving endpoints. Only a single video stream is needed, reducing bandwidth requirements. As each participant can be individually isolated, the participants can be provided in similar sizes and laid out as desired in a continuous presence display that is pleasing to view.

Abstract: The present invention relates to a method of training a network for reconstructing and/or segmenting microscopic images comprising the step of training the network in the cloud. Further, for training the network in the cloud training data comprising microscopic images can be uploaded into the cloud and a network is trained by the microscopic images. Moreover, for training the network the network can be benchmarked after the reconstructing and/or segmenting of the microscopic images. Wherein for benchmarking the network the quality of the image(s) having undergone the reconstructing and/or segmenting by the network can be compared with the quality of the image(s) having undergone reconstructing and/or segmenting by already known algorithm and/or a second network.

Abstract: Signals sent to a memory component are received by circuitry included in the memory component. The circuitry comprises a comparator circuit to process the received signals. The circuitry further comprises a resistor-capacitor (RC) circuit coupled to the comparator circuit to increase bandwidth and reduce interference in the received signals processed by the comparator circuit.

Abstract: An image sensor including a pixel array which includes pixels for sensing a reflected signal, incident on the pixel array to form reflected light spots separated from each other. Each pixel includes a photodetector and a readout circuit. The photodetector is configured to detect the reflected signal and output a photo response signal. The readout circuit is configured to generate a pixel output according to the photo response signal. The pixels include a first pixel and a second pixel adjacent to the first pixel along a first predetermined direction. The readout circuit of the first pixel is adjacent to the photodetector of the second pixel along the first predetermined direction, and adjacent to the photodetector of the first pixel along a second predetermined direction perpendicular to the first predetermined direction. The pixel array has a small pixel pitch and a high fill factor.

Abstract: The first photoelectric conversion unit and the second photoelectric conversion unit each include a first semiconductor region of a first conductivity type disposed at a first depth, a second semiconductor region of a second conductivity type disposed at a second depth, a third semiconductor region of the first conductivity type disposed at a third depth, and a fourth semiconductor region of the second conductivity type disposed at a fourth depth. An impurity concentration of the second semiconductor region of the first photoelectric conversion unit and an impurity concentration of the second semiconductor region of the second photoelectric conversion unit are different at the second depth.

Abstract: The present technology relates to an imaging device, a method of driving the same, and an electronic instrument capable of improving functions by using high-speed readout in a period shorter than the output cycle of an image. An imaging device includes a pixel array unit in which pixels are arranged in a matrix, and a control unit that controls image readout by the pixel array unit. The control unit causes the pixel array unit to perform image readout twice or more within a cycle of outputting one image to the outside. The present technology can be applied to an imaging device or the like including a memory area, for example.

Abstract: A solid-state image pickup unit includes: a substrate made of a first semiconductor; a substrate made of a first semiconductor; a photoelectric conversion device provided on the substrate and including a first electrode, a photoelectric conversion layer, and a second electrode in order from the substrate; and a plurality of field-effect transistors configured to perform signal reading from the photoelectric conversion device. The plurality of transistors include a transfer transistor and an amplification transistor, the transfer transistor includes an active layer containing a second semiconductor with a larger band gap than that of the first semiconductor, and one terminal of a source and a drain of the transfer transistor also serves the first electrode or the second electrode of the photoelectric conversion device, and the other terminal of the transfer transistor is connected to a gate of the amplification transistor.

Abstract: Shared-readout pixels conventionally disposed in two or more physical columns of a pixel array are spatially interleaved (merged) within a single physical column to yield a pixel array in which each physical pixel column includes two or more logical columns of shared-readout pixels coupled to respective logical-column output lines.

Abstract: An image sensor is disclosed. The image sensor may include a plurality of unit pixels, a color filter array provided on the plurality unit pixels, the color filter array including color filters, an anti-reflection layer disposed between the plurality of unit pixels and the color filter array, and a fence pattern including a lower portion buried in the anti-reflection layer and an upper portion separating the color filters from each other. A width of the upper portion of the fence pattern may be greater than a width of the lower portion.

Abstract: A solid-state imaging device includes: a first photodiode made up of a first first-electroconductive-type semiconductor region formed on a first principal face side of a semiconductor substrate, and a first second-electroconductive-type semiconductor region formed within the semiconductor substrate adjacent to the first first-electroconductive-type semiconductor region; a second photodiode made up of a second first-electroconductive-type semiconductor region formed on a second principal face side of the semiconductor substrate, and a second second-electroconductive-type semiconductor region formed within the semiconductor substrate adjacent to the second first-electroconductive-type semiconductor region; and a gate electrode formed on the first principal face side of the semiconductor substrate; with impurity concentration of a connection face between the second first-electroconductive-type semiconductor region and the second second-electroconductive-type semiconductor region being equal to or greater than im

Abstract: Provided is a solid-state image pickup element that includes a pixel, a light-receiving-surface-sided trench, and a light-receiving-surface-sided shielding member. A plurality of protrusions is formed on the light-receiving surface of the pixel in the solid-state image pickup element. In addition, the light-receiving-surface-sided trench is formed around the pixel having the plurality of protrusions formed, at the light-receiving surface in the solid-state image pickup element. In addition, the light-receiving-surface-sided member is buried in the light-receiving-surface-sided trench formed around the pixel having the plurality of protrusions formed on the light-receiving surface in the solid-state image pickup element. In addition, the photoelectric conversion region of a near-infrared-light pixel expands to the surface side opposed to the light-receiving surface of the photoelectric conversion region of a visible-light pixel.

Abstract: A pixel includes a semiconductor substrate, a photodiode region, a floating diffusion region, and a dielectric layer. The substrate has a top surface forming a trench lined by the dielectric layer, and having a trench depth relative to a planar region of the top surface. The photodiode region is in the substrate and includes a bottom photodiode section beneath the trench and a top photodiode section adjacent to the trench, adjoining the bottom photodiode section, and extending toward the planar region to a photodiode depth less than the trench depth. The floating diffusion region is adjacent to the trench and has a junction depth less than the trench depth. A top region of the dielectric layer is between the planar region and the junction depth. A bottom region of the dielectric layer is between the photodiode depth and the trench depth, and thicker than the top region.

Abstract: A fingerprint driving circuit and a display panel are provided. A first stage of amplifying unit is configured to receive a fingerprint voltage, perform a voltage amplifying process on the fingerprint voltage, and output the fingerprint voltage on which the voltage amplifying process has been performed. A second stage of amplifying unit is configured to receive the fingerprint voltage on which the voltage amplifying process has been performed, perform a current and power amplifying process on the fingerprint voltage on which the voltage amplifying process has been performed, and output the fingerprint voltage on which the current and power amplifying process has been performed. A voltage difference between a valley and a ridge of a fingerprint is amplified, so that the signal can be read out easily and correctly and the output ability of the signal is enhanced.

Abstract: An apparatus is provided. The apparatus includes a semiconductor substrate including a first photodiode to generate a first charge, a second photodiode to generate a second charge, a barrier layer between the first photodiode and the second photodiode, wherein the first photodiode, the barrier layer, and the second photodiode form a stack. The apparatus further includes a floating drain and one or more gates including: a first gate portion on the semiconductor substrate and a second gate portion extending from the front side surface through the first photodiode and reaching the barrier layer. The first gate portion is configured to conduct a first signal to control flow of charge from the first photodiode to the floating drain, and the second gate portion is configured to conduct a second signal to control the barrier layer to control the flow of the second charge.

Abstract: An imaging device including a semiconductor substrate having a pixel region where pixels are arranged and a peripheral region adjacent to the pixel region; an insulating layer that covers the pixel region and the peripheral region; a first electrode that is located on the insulating layer above the pixel region; a photoelectric conversion layer that covers the first electrode; and a first layer that covers the photoelectric conversion layer, the first layer being located above the pixel region and the peripheral region. The thickness of the first layer above the peripheral region is larger than a thickness of the first layer above the pixel region, and a level of an uppermost surface of the first layer above the peripheral region is higher than a level of an uppermost surface of the first layer above the pixel region.

Abstract: An imaging device includes a plurality of pixel transistors at a substrate surface of a semiconductor substrate, an element isolation region that isolates the plurality of pixel transistors from each other, a charge storage region at a deeper position in the semiconductor substrate than the substrate surface, and a charge discharge layer of the same conductivity type as the charge storage region. The charge discharge layer is arranged between the element isolation region and the charge storage region.

Abstract: An imaging system includes an imaging optical system, an imaging device, an actuator, and control circuitry. The actuator changes a relative position of a plurality of pixel cells and an image of a subject. The pixel cells include a photoelectric converter and a charge accumulation region. The control circuitry sets the relative position to a first position, and a first signal charge obtained at the photoelectric converter during a first exposure is accumulated in the charge accumulation region. The relative position is set to a second position different from the first position, and a second signal charge obtained at the photoelectric converter during a second exposure time that is different from the first exposure time is accumulated in the charge accumulation region in addition to the first signal charge.

Abstract: In an imaging device that transmits control signals to a large number of pixels, an influence is reduced of delay at the time of signal transmission. An imaging device drive circuit includes a plurality of control signal lines, a control signal distribution line, two control signal transmission units, and two operation units. The plurality of control signal lines each transmits a control signal for each of a plurality of pixels that generates image signals depending on incident light on the basis of the control signal. The control signal distribution line has a shape of a line, and the plurality of control signal lines is connected thereto in a distributed manner, and the control signal distribution line distributes the control signals supplied from both ends of the line to the plurality of control signal lines.