Abstract: The present technology relates to a light reception device and a distance measurement module whose characteristic can be improved. The light reception device includes an on-chip lens, a wiring layer, and a semiconductor layer arranged between the on-chip lens and the wiring layer. The semiconductor layer includes a first tap having a first voltage application portion and a first charge detection portion arranged around the first voltage application portion, and a second tap having a second voltage application portion and a second charge detection portion arranged around the second voltage application portion. Furthermore, the light reception device is configured such that a phase difference is detected using signals detected by the first tap and the second tap. The present technology can be applied, for example, to a light reception device that generates distance information, for example, by a ToF method, and so forth.

Abstract: An image sensing device is disclosed. The image sensing device includes a first unit pixel provided with a first photoelectric conversion element and a first floating diffusion region, a second unit pixel provided with a second photoelectric conversion element and a second floating diffusion region, a third unit pixel provided with a third photoelectric conversion region and a third floating diffusion region, and a fourth unit pixel provided with a fourth photoelectric conversion element and a fourth floating diffusion region. The first to fourth unit pixels are isolated from each other by a first device isolation structure. The first to fourth floating diffusion regions are coupled to a common floating diffusion node through conductive lines.

Abstract: A pixel array for a high definition (HD) image sensor is disclosed. The pixel array includes a number of split pixel cells each including a first photodiode and a second photodiode that is more sensitive to incident light than the first photodiode. The first photodiode can be used to sense bright or high intensity light conditions, while the second photodiode can be used to sense low to medium intensity light conditions. In the disclosed pixel array, the sensitivity of one or more photodiodes is reduced by application of a light attenuation layer over the first photodiode of each split pixel cell. In accordance with methods of the disclosure, the light attenuation layer can be formed prior to the formation of a metal, optical isolation grid structure. This can lead to better control of the thickness and uniformity of light attenuation layer.

Abstract: Imaging devices and electronic apparatuses with one or more shared pixel structures are provided. The shared pixel structure includes a plurality of photoelectric conversion devices or photodiodes. Each photodiode in the shared pixel structure is located within a rectangular area. The shared pixel structure also includes a plurality of shared transistors. The shared transistors in the shared pixel structure are located adjacent the photoelectric conversion devices of the shared pixel structure. The rectangular area can have two short sides and two long sides, with the shared transistors located along one of the long sides. In addition, a length of one or more of the transistors can be extended in a direction parallel to the long side of the rectangular area.

Abstract: The present invention belongs to the technical field of CMOS image sensors, and particularly relates to an on-chip multiplexing pixel control circuit for controlling a super-large area array splicing CMOS image sensor. The multiplexing type pixel control circuit includes at least one multiplexing unit, each multiplexing unit includes L levels of serial pixel control sub-circuits and a windowing address gating circuit. Through the different positions of the multiplexing units in the whole chip, the group address buffer circuits of the multiplexing units generate different group address reference signals, which are compared with a group decoding address generated in a group decoding address buffer circuit to realize group decoding and gate the multiplexing unit. Meanwhile, the serial pixel control sub-circuit in the multiplexing unit is compared with a row decoding address to realize exposure and readout control of a corresponding row of the multiplexing unit.

Abstract: Various embodiments of the present disclosure are directed towards methods for forming an image sensor in which a device layer overlies and has a different semiconductor material than a substrate and in which the device layer has high crystalline quality. Some embodiments of the methods include: epitaxially growing the device layer on the substrate; patterning the device layer to form a trench dividing the device layer into mesa structures corresponding to pixels; forming an inter-pixel dielectric layer filling the trench and separating the mesa structures; and forming photodetectors in the mesa structures. Other embodiments of the methods include: depositing the inter-pixel dielectric layer over the substrate; patterning the inter-pixel dielectric layer to form cavities corresponding to the pixels; epitaxially growing the mesa structures in the cavities; and forming the photodetectors in the mesa structures.

Abstract: An image sensor includes sensing pixels, each comprising a photodetector in electrical communication with a floating diffusion capacitor via a transfer gate, and a lateral overflow storage capacitor coupled to the floating diffusion capacitor via a lateral overflow control gate. A first readout circuit circuitry located between the transfer gate and the lateral overflow control gate comprises a first amplifier. A second readout circuitry, located opposite the lateral overflow control gate from the first readout circuitry, comprises a second amplifier. Following image integration, charge stored on the floating diffusion capacitor is readout using the first readout circuitry and charge stored on the lateral overflow storage capacitor is readout using the second readout circuitry. In a second readout, charge stored on the photodetector is readout using the first readout circuitry with a first amplification applied and charge stored on the photodetector is readout with a second, different amplification applied.

Abstract: The disclosure relates to active pixel sensors such as CMOS sensors. A sample stage of each pixel may comprise first and second sample switches in series between a buffer amplifier and a storage node. The first sample switch is connected to a column sample line, and the second sample switch is connected to a row sample line, such that an exposure signal is only passed to the storage node at a time when both a column sample signal and a row sample signal are active.

Abstract: There is provided a circuit to improve the sensing efficiency of pixels that uses the induction effect of a capacitor to duplicate a voltage deviation caused by additional electrons and uses a circuit to cancel out the voltage deviation during reading pixel data thereby improving the sensing efficiency.

Abstract: An image sensing device includes at least one unit pixel including a plurality of pixels for generating a plurality of pixel signals based on a plurality of control signals having different phases, and an equalizing circuit suitable for equalizing noise that occurs in the plurality of pixels during a reset operation on the unit pixel.

Abstract: A solid-state imaging device includes: pixels arranged in a matrix; a vertical signal line provided for each column, conveying a pixel signal; a power line provided for each column, proving a power supply voltage; and a feedback signal line provided for each column, conveying a signal from a peripheral circuit to a pixel, in which each of the pixels includes: an N-type diffusion layer; a photoelectric conversion element above the N-type diffusion layer; and a charge accumulation node between the N-type diffusion layer and the photoelectric conversion element, accumulating signal charge generated in the photoelectric conversion element, the feedback signal line, a metal line which is a part of the charge accumulation node, the vertical signal line, and the power line are disposed in a second interconnect layer, and the vertical signal line and the power line are disposed between the feedback signal line and the metal line.

Abstract: An image sensor includes a pixel array of pixels arranged in one or more rows and one or more columns, the pixel array configured to generate an image based on light being incident on one or more pixels of the pixel array. The image sensor includes pixel load circuitry connected to one column of pixels and including transistors serially connected to each other. The image sensor includes switches connected in parallel to separate, respective nodes between adjacent transistors. The image sensor includes image sensor processing circuitry configured to receive, from image processor circuitry, gain information indicating an intensity of light concurrently with an image being generated by the image sensor, and control at least one switch of the plurality of switches to be turned on/off to change an electrical path of a current that passes through the pixel load circuitry, based on the gain information.

Abstract: A method, apparatus and system are described providing a high dynamic range pixel. An integration period has multiple sub-integration periods during which charges are accumulated in a photosensor and repeatedly transferred to a storage node, where the charges are accumulated for later transfer to another storage node for output.

Abstract: An image sensing device includes a pixel array configured to include a first pixel belonging to a first row and a first column, and a second pixel belonging to a second row adjacent to the first row and a second column adjacent to the first column; and a dual conversion gain (DCG) capacitor coupled between the first pixel and the second pixel, and a first DCG transistor for selectively connecting the DCG capacitor to or disconnecting the DCG capacitor from a first floating diffusion region of the first pixel; and the second pixel includes a second floating diffusion region and a second DCG transistor for selectively connecting the DCG capacitor to or disconnecting the DCG capacitor from a second floating diffusion region of the second pixel.

Abstract: A method, apparatus and system are described providing a high dynamic range pixel. An integration period has multiple sub-integration periods during which charges are accumulated in a photosensor and repeatedly transferred to a storage node, where the charges are accumulated for later transfer to another storage node for output.

Abstract: Provided are a solid-state imaging device capable of improving image quality of a captured image even if the pixel size is increased, and an electronic device equipped with the solid-state imaging device. A solid-state imaging device is provided that includes: at least two column areas that perform Analog To Digital (AD) conversion of a pixel signal generated by a pixel; a plurality of vertical signal lines that transfers the pixel signal to the column areas; and a free area in which the plurality of vertical signal lines is not wired, in which two of the vertical signal lines facing each other sandwiching the free area are arranged, and lengths of the two vertical signal lines are substantially equal to each other.

Abstract: An image pickup device having a pixel region in which pixels are arranged, and in which a multilayer wiring structure is disposed. Each pixel includes a photoelectric conversion unit, a charge accumulation unit, a floating diffusion, a light shielding portion covering the charge accumulation unit and opening above the photoelectric conversion unit, and a waveguide which overlaps at least partially a portion at which the light shielding portion opens in a plan view. The device includes an insulating film disposed below the optical waveguide. The insulating film has a refractive index higher than that of an interlayer insulating film. The insulating film is disposed closer to the photoelectric conversion unit than to the lowermost wiring layer among wiring layers of the multilayer wiring structure. The insulating film extends to a portion above the light shielding portion. The insulating film is wider than a lower portion of the optical waveguide.

Abstract: A unit cell for use in an optical active pixel sensor (APS) includes a photodiode having a first terminal connected to a photodiode biasing PDB line, and a second terminal opposite from the first terminal; a reset switch transistor having a first terminal connected to the second terminal of the photodiode, and a second terminal connected to a reference voltage line, and a gate of the reset switch transistor is connected to a reset signal RST supply line; and an amplification transistor having a first terminal connected to an output readout line, and a second terminal connected to a driving voltage supply line, and a gate of the amplification transistor is connected to a node constituting the connection of the second terminal of the photodiode and the first terminal of the reset switch transistor. An optical APS device includes a sensor matrix formed of a plurality of unit cells according to any of the embodiments arranged in an array of rows and columns.

Abstract: The present invention encompasses methods and systems of representing video in continuous time. Photons incident on pixels in an imaging array are continuously captured using a continuous time imaging sensor array to produce respective continuous time analog signals without any discontinuity in time. At each pixel, the respective continuous time analog signal is modulated into respective continuous time binary analog signals. The continuous time binary analog signals from all pixels are aggregated to produce a frame free video. Each pixel may comprise a continuous time sigma delta modulator and a photodiode having a capacitance. At each pixel, the respective continuous time analog signal is modulated using the continuous time sigma delta modulator to produce the corresponding continuous time binary analog signal. The capacitance of the photodiode functions as a charge integrator.

Abstract: In one embodiment, an electronic device includes a compute-in-memory (CIM) array that includes a plurality of columns. Each column includes a plurality of CIM cells connected to a corresponding read bitline, a plurality of offset cells configured to provide a programmable offset value for the column, and an analog-to-digital converter (ADC) having the corresponding bitline as a first input and configured to receive the programmable offset value. Each CIM cell is configured to store a corresponding weight.

Abstract: The invention pertains to a method for subtracting background light from an exposure value of a first pixel in an imaging array, said first pixel receiving a reflection of a spot from a scenery illuminated by a periodically pulsed pattern of spots, said periodically pulsed pattern comprising in alternation an illuminated phase and a non-illuminated phase, the method comprising: accumulating in said first pixel a charge in proportion to a first quantity of incident light, received in said first pixel while detecting said spot during a predetermined amount of time; and decreasing said charge in proportion to a second quantity of incident light received during said predetermined amount of time in absence of said spot. The invention also pertains to a pixel and an imaging array.

Abstract: An imaging device 100 includes a pixel array PA. A first period, a third period, and a second period appear in this order in one frame. During the first period, pixel signal readout is performed on at least one first row in the pixel array PA. During the second period, pixel signal readout is performed on at least one second row in the pixel array PA. At least one of the at least one first row or the at least one second row includes two rows in the pixel array PA. During the third period, no pixel signal readout is performed on the rows in the pixel array PA. Each of the first period and the second period is one of the high-sensitivity exposure period and the low-sensitivity exposure period. The third period is the other of the high-sensitivity exposure period and the low-sensitivity exposure period.

Abstract: A display device and a fingerprint recognition method are provided. The fingerprint recognition device includes at least two photosensitive regions receiving different colors of light, and the color of the light received by one photosensitive region corresponds to the emitted color of the light emitting sub-pixel in one color.

Abstract: Provided is a solid-state image pickup element that amplifies the difference between respective signals of a pair of pixels and enables a reduction in the number of wiring lines. The solid-state image pickup element includes an electric-charge accumulation unit, a reference reset transistor, and a readout reset transistor. The electric-charge accumulation unit accumulates electric charge transferred from a photoelectric conversion unit and generates signal voltage corresponding to the amount of the electric charge. The reference reset transistor supplies predetermined reset voltage to the electric-charge accumulation unit in a case of generating predetermined reference voltage. The readout reset transistor supplies voltage different from the reset voltage to the electric-charge accumulation unit in a case of reading out the signal voltage.

Abstract: A pixel circuit, a driving method thereof, an array substrate, and a display device are provided. The pixel circuit includes signal inputting sub-circuit, signal reading sub-circuit, and photosensitive element. The signal inputting sub-circuit is configured to: under control of inputting control terminal, turn on coupling between signal inputting terminal and first terminal of photosensitive element in signal writing period, and turn off coupling between signal inputting terminal and first terminal of photosensitive element in exposure period and signal reading period. The signal reading sub-circuit is configured to: under control of reading control terminal, turn off coupling between first terminal of photosensitive element and signal reading terminal in signal writing period and exposure period, and turn on coupling between first terminal of photosensitive element and signal reading terminal in signal reading period.

Abstract: To widen a dynamic range without reducing a frame rate in a solid-state imaging element provided with a differential amplifier circuit. The solid-state imaging element includes a reading circuit and a processing unit. The reading circuit performs processing of outputting a differentially amplified signal obtained by amplifying a difference between generated voltages of a pair of pixels and processing of outputting a pixel signal of the generated voltage of at least one of the pair of pixels each time the pair of pixels are exposed. The processing unit performs synthesis processing of synthesizing the output differentially amplified signal and the output pixel signal.

Abstract: Digital camera systems and methods are described that provide a color digital camera with direct luminance detection. The luminance signals are obtained directly from a broadband image sensor channel without interpolation of RGB data. The chrominance signals are obtained from one or more additional image sensor channels comprising red and/or blue color band detection capability. The red and blue signals are directly combined with the luminance image sensor channel signals. The digital camera generates and outputs an image in YCrCb color space by directly combining outputs of the broadband, red and blue sensors.

Abstract: A method for light-to-digital conversion includes setting a time integrator circuit into a reference condition and starting to integrate charge from a sensor device for the duration of an integration time. An integration signal is generated and is indicative of the integrated charge. The integration signal is compared with an adjustable reference signal. A first count is generated when the comparison indicates that the integration signal has reached an integration range, wherein the integration range is defined by a low and a high voltage. A second count is generated when the comparison indicates that the integration signal has reached the adjustable reference signal. The adjustable reference signal is incremented in discrete steps when a second count has been generated. Then, the time integrator circuit is reset into the reference condition, when the comparison indicates that the integration signal has reached the integration range.

Abstract: An image sensing device includes a floating diffusion node, a reset circuit coupled between a supply terminal of a high voltage and the floating diffusion node, and suitable for resetting the floating diffusion node with the high voltage during a reference period based on a reset control signal, a photodiode coupled between a supply terminal of a low voltage and a coupling node, and suitable for generating a photocharge based on incident light during an exposure period, a transmission block coupled between the coupling node and the floating diffusion node, and suitable for transmitting the photocharge to the floating diffusion node during a transmission period based on a transmission control signal, and a selection circuit coupled between an input terminal of a boost control signal and an output terminal of a pixel signal, and suitable for generating the pixel signal with a boost voltage greater than the high voltage during the transmission period based on a selection control signal and a voltage applied to t

Abstract: Techniques are described for per-color adaptive in-pixel programmable gain amplification (PGA) for CMOS image sensors. The sensor has an array of photodetectors that each receives light through a corresponding color filter of a color filter array. Different color filters can have different transmissivity characteristics. Embodiments receive analog pixel output signals from the array of pixels. A respective gain select signal can be generated based on the signal level of each received analog pixel output signal to indicate a selected one of multiple gain factors. A programmable gain amplifier can be controlled, based on each respective gain select signal, to amplify the corresponding analog pixel output signal in accordance with the selected one of the predetermined plurality of gain factors, thereby generating a respective adaptively amplified pixel output signal. The adaptively amplified pixel output signal can be output to an analog-to-digital conversion path for generation of a digital pixel output signal.

Abstract: A method of performing tone mapping in a stream of images (Fr1 . . . N) includes, for each image (FrN) in the stream: sparsely reading image data values (IDN) corresponding to the image (FrN) to provide sparse image data from a plurality of sparsely distributed positions (Pos1 . . . k) in the image (FrN); generating, based on the sparse image data, tone mapping parameters of a tone mapping algorithm (TMA) for each position in the image (FrN); each position in the image (FrN) including the sparsely distributed positions (Pos1 . . . k) and a plurality of further positions (PosF1 . . . j) in the image (FrN); reading the image data values (IDN) corresponding to the image (FrN) to provide image data from each position in the image (FrN); and tone mapping the image by mapping the image data from each position in the image (FrN) to adjusted image data using the generated tone mapping parameters.

Abstract: A time measurement device for calculating a time from an input of a first trigger signal to an input of a second trigger signal as a measured time includes a start gate configured to generate a start signal, a stop gate configured to generate a stop signal, a TDC circuit configured to generate a digital code corresponding to the time from an input of a start signal to an input of a stop signal, a delay circuit configured to delay an input of at least one of the start signal and the stop signal to the TDC circuit by a predetermined delay time, and a control unit configured to calculate a measured time on the basis of a plurality of digital codes generated by the TDC circuit, wherein the time delay unit selects at least two delay times.

Abstract: Techniques for providing a virtual touch screen are described. An example of a computing device with a virtual touch screen includes a projector to project a user interface image onto a touch surface, and a depth camera to generate a depth image representing objects in a vicinity of the user interface image, and a touch mask generator. The computing device also includes a touch detection module to analyze the touch mask to detect touch events. The touch detection module is configured to identify a finger in the touch mask, identify a centroid region of the finger and compute a distance of the centroid region from a touch surface, and compare the distance to a threshold distance to identify a touch event.

Abstract: Embodiments herein relate to an autonomous vehicle or self-driving vehicle. The level of comfort with autonomous driving offered to the user and the parameters of operation of the autonomous vehicle might increase or decrease a driver's comfort (anxiety) with the vehicle. Sensors in the vehicle can detect a user's driving style, comfort level and may propose an autonomy level to the user and/or parameters of operation.

Abstract: Disclosed is an image adjustment apparatus including a receiver which is configured to receive a first input image of an object which is time-synchronously captured and a second input image in which a motion event of the object is sensed time-asynchronously, and an adjuster which is configured to adjust the first input image and the second input image.

Abstract: Systems and methods for adaptively presenting a keyboard on a touch-sensitive display are disclosed herein. In one aspect, a method includes: monitoring typing inputs received from a user at a touch-sensitive display of an electronic device. The method also includes: determining whether the typing inputs are converging towards a midpoint of the touch-sensitive display or diverging away from the midpoint of the touch-sensitive display. In accordance with a determination that the typing inputs are converging towards the midpoint of the touch-sensitive display, the method includes: providing a first feedback to the user to indicate that the typing inputs are converging. In accordance with a determination that the typing inputs are diverging away from the midpoint of the touch-sensitive display, the method includes: providing a second feedback to the user to indicate that the typing inputs are diverging.

Abstract: Reduction in interference between different time of flight (ToF) cameras used for depth measurements and operating in the same application environment is achieved using a spread spectrum technique in which the cyclical operations of a pulsed light source such as a laser or light emitting diode (LED) and gated image sensor are varied in a pseudo-random manner in each camera. In an alternative embodiment, spread spectrum logic is applied in a ToF camera that employs phase modulation techniques.

Abstract: A sensor device for a motor vehicle includes a light source, a detection device and a control and evaluation device. The control and evaluation device activates the light source to emit pulses, activates the detection device for detecting light reflected back by the environment, and evaluates the signals from the detection device. The control and evaluation device, the detection device and the light source are designed as a Time-of-Flight structure for detection in a first spatial direction such that spatially assignable distance data are detected. The light source and the detection device are disposed in a receiving space arranged along a bearing surface of a vehicle. The light source is disposed inside the receiving space in a tilted manner such than an angle of at least 5 degrees is formed between a normal to the bearing surface and an optical axis of the light source.

Abstract: A pixel circuit includes a transfer transistor coupled between a photodiode and a floating diffusion to transfer image charge to the floating diffusion. A precharge offset signal is representative of a difference between a row that includes the transfer transistor and a different row that is being read out. The selection circuit is coupled to select between first and second transfer control signals to control the transfer transistor. The selection circuit is coupled to output the first transfer control signal in response to a precharge enable signal during a read out operation of the different row. The precharge enable signal is generated in response to a comparison of a precharge offset signal and an exposure value signal. The selection circuit is coupled to output the second transfer control signal in response to a sample enable signal during a read out operation of the row that includes the transfer transistor.

Abstract: So as to obtain color parallax images, it has been necessary to prepare an image capturing optical system and an image capturing element that are complex, to capture the parallax images. In view of this, provided is an image processing apparatus including: an image obtaining section that obtains original image data including a pixel having a pixel value of any of primary colors constituting colors of a subject image and a pixel having a pixel value showing at least a parallax of the subject image; and an image generating section that generates, from the original image data, primary color image data made up of pixels having the pixel value of the primary color, and parallax image data made up of pixels having the pixel value showing the parallax.

Abstract: In realizing an entire-screen simultaneous shutter function using a solid-state imaging device having a device structure as a CMOS solid-state imaging device, the restriction undergone by exposure time is relieved to secure a sufficient exposure time with swift operation. Separately from a transfer Tr for transferring a signal charge of a buried-type PD to an FD, a drain Tr is provided to exclude a signal charge of the buried PD. Both a channel potential on the drain transistor when turned on and a channel potential on the transfer transistor when turned on are set higher than a depleting potential for the PD. This makes it possible to completely transfer the signal charge of the PD by both the transfer Tr and the drain Tr. In the operation to sequentially read out a signal charge from the FD on a pixel-row basis, PD exposure operation is started in a course of reading out the same.

Abstract: A method of processing a digital image having a predetermined color pattern, includes converting the predetermined color pattern of the digital image into a converted digital image having a different desired color pattern; and using algorithms adapted for use with the desired color pattern for processing the converted digital image.

Abstract: A CMOS imager is integrated on a single substrate along with logic and support circuitry for decoding and processing optical information received by the CMOS imager. Integrating a CMOS imager and peripheral circuitry allows for a single chip image sensing device.

Abstract: An image sensor includes a photosensitive element, a reset circuit, an amplifier transistor, and a current source. The photosensitive element is coupled to generate an image charge in response to incident light and transfer the image charge to a circuit node. The reset circuit is coupled to selectively reset a voltage at the circuit node. The amplifier transistor includes a gate terminal responsive to the voltage at the circuit node. A current source is coupled between a high level power rail and a second terminal of the amplifier transistor.

Abstract: A solid-state imaging device, such as a CMOS sensor, includes a unit pixel having a charge generation unit for generating signal charge, a floating diffusion for accumulating the signal charge generated by the charge generation unit, a transfer gate transistor for transferring the signal charge in the charge generation unit to the floating diffusion, a reset transistor for resetting the floating diffusion, and an amplifying transistor for generating a signal in accordance with the signal charge generated by the charge generation unit and outputting the signal to a vertical signal line. The width of a reset pulse for driving the reset transistor is sufficiently decreased to, for example, less than or equal to ½, and preferably less than or equal to ? of the response time of a signal that has occurred on the vertical signal line in response to the reset pulse.

Abstract: Apparatus for reducing exposing time of an image processing system is disclosed herein. The image processing system including a shift register coupled to a photo-sensing means, the photo-sensing device is used to convert an optical image from a lens to a plurality groups of charge to form an electrical signal. The apparatus includes control device (counter) and a reset gate. The control device generates the first reset signal and the second reset signal depending on whether the image processing system is in a first resolution mode or a second resolution mode. A first number of cells of the photo-sensing device are exposed to the light of the optical image during the first resolution mode, and a second number of cells of the photo-sensing device being exposed to the optical image during the second resolution mode. The first number of cells is greater than the second number of cells.

Abstract: A solid-state imaging device includes the following: a pixel array section in which a plurality of pixels are two-dimensionally arranged, each of the pixels outputting an image signal; and a column circuit area including a plurality of column circuits. In the solid-state imaging device, a vertical signal line through which image signals from a single column of pixels are output is selectively connected to a given number, which is more than one, of the column circuits, and a signal from a selected pixel row is selectively output to one of the given number of the column circuits so that signals read out from the same pixel can be sent to the same column circuit.

Abstract: An image sensor system using offset analog to digital converters. The analog to digital converters require a plurality of clock cycles to carry out the actual conversion. These conversions are offset in time from one another, so that at each clock cycle, new data is available. A system includes a CMOS active pixel image sensor having an array for photoreceptors to convert an image into an analog signal. The CMOS image sensor converts the analog signal into a digital signal using a pipelined analog to digital converter.

Abstract: An image sensor system using offset analog to digital converters. The analog to digital converters require a plurality of clock cycles to carry out the actual conversion. These conversions are offset in time from one another, so that at each clock cycle, new data is available. A CMOS image sensor converts successive analog signals, representing at least a portion of an image, into successive digital signals using an analog to digital circuit block. Multiple clock cycles may be used by the circuit block to fully convert an analog signal into a corresponding digital signal. The conversion of one analog signal into a corresponding digital signal by the circuit block may be offset in time and partially overlapping with the conversion of a successive analog signal into its corresponding successive digital signal by the circuit block.