Abstract: A multilayer free magnetic layer structure for spin-based magnetic memory is provided herein. The multilayer free magnetic structure is employed in a magnetic tunnel junction (MTJ) and includes antiferromagnetically coupled magnetic layers. In some cases, the antiferromagnetic coupling is mediated by RKKY interaction with a Ru, Ir, Mo, Cu, or Rh spacer layer. In some cases, low damping magnetic materials, such as CoFeB, FeB, or CoFeBMo are used for the antiferromagnetically coupled magnetic layers. By employing the multilayer free magnetic structure for the MTJ as variously described herein, the critical or switching current can be significantly reduced compared to, for example, an MTJ employing a single-layer free magnetic layer. Thus, higher device efficiencies can be achieved. In some cases, the magnetic layers of the multilayer free magnetic structure are perpendicular magnets, which can be employed, for example, in perpendicular spin-orbit torque (pSOT) memory devices.

Abstract: A Wheatstone bridge array comprising a tunneling magnetoresistive (TMR) sensor and a method for manufacturing is disclosed. The bottom lead for the TMR sensor has a very small surface roughness due to not only chemical mechanical planarization (CMP) but also due to forming the bottom lead from multiple layers. The multiple layers include at least a bottom first metal layer and a top second metal layer disposed on the first metal layer. The second metal layer generally has a lower surface roughness than the first metal layer. Additionally, the second metal layer has a slower polishing rate. Therefore, not only does the second metal layer reduce the surface roughness simply be being present, but the slower polishing rate enables the top second metal film to be polished to a very fine surface roughness of less than or equal to ˜2 Angstroms.

Abstract: A three dimensional (3D) memory array is disclosed. The 3D memory array may include an electrode plane and a memory material disposed through and coupled to the electrode plane. A memory cell included in the memory material is aligned in a same plane as the electrode plane, and the memory cell is configured to exhibit a first threshold voltage representative of a first logic state and a second threshold voltage representative of a second logic state. A conductive pillar is disposed through and coupled to the memory cell, wherein the conductive pillar and electrode plane are configured to provide a voltage across the memory cell to write a logic state to the memory cell. Methods to operate and to form the 3D memory array are disclosed.

Abstract: A semiconductor device includes a magnetic random access memory (MRAM) cell. The MRAM cell includes a first magnetic layer disposed over a substrate, a first non-magnetic material layer made of a non-magnetic material and disposed over the first magnetic layer, a second magnetic layer disposed over the first non-magnetic material layer, and a second non-magnetic material layer disposed over the second magnetic layer. The second magnetic layer includes a plurality of magnetic material pieces separated from each other.

Abstract: The magnetoresistance effect device includes: a magnetoresistance effect element that includes a first magnetization free layer, a magnetization fixed layer or a second magnetization free layer, and a spacer layer interposed between the first magnetization free layer and the magnetization fixed layer or the second magnetization free layer; and a magnetic material part that applies a magnetic field to the magnetoresistance effect element, wherein the magnetic material part is arranged to surround an outer circumference of the magnetoresistance effect element in a plan view in a stacking direction L of the magnetoresistance effect element.

Abstract: In a method of manufacturing a semiconductor device, a first layer having an opening is formed over a substrate. A second layer is formed over the first layer and the substrate. A photo resist pattern is formed over the second layer above the opening of the first layer. The photo resist pattern is reflowed by a thermal process. An etch-back operation is performed to planarize the second layer.

Abstract: A magnetic sensor includes first and second yokes, first and second magnetoresistive elements, and a current path for passing a current through the first and second magnetoresistive elements. Each of the first and second yokes receives an input magnetic field containing an input magnetic field component in a direction parallel to a first virtual straight line Lz, and generates an output magnetic field. The output magnetic field contains an output magnetic field component in a direction parallel to a second virtual straight line Lx orthogonal to the first virtual straight line Lz. The first and second magnetoresistive elements generate respective detection values corresponding to the output magnetic field components of the output magnetic fields generates by the first and second yokes. The first and second yokes are electrically continuous with the first and second magnetoresistive elements, respectively.

Abstract: The present invention relates to a device and a method for measuring a magnetic field, wherein a spin current is injected into a magnetic body that has magnetic anisotropy using a spin Hall effect occurring in a current applied to a conductor, and the degree of shift of hysteresis in the magnetic body is calculated while reversing the magnetization of the magnetic body by a spin torque such that an external magnetic field applied to the magnetic body can be measured precisely.

Abstract: A magnetoresistive effect element according to one aspect of the present disclosure includes a first ferromagnetic layer, a second ferromagnetic layer, and a spacer layer. The spacer layer is provided between the first ferromagnetic layer and the second ferromagnetic layer. The spacer layer includes an Mn alloy represented by General Formula (1). Mn?X1-???(1) (in the Formula, X is at least one metal selected from the group consisting of Al, V, Cr, Cu, Zn, Ag, Au, an NiAl alloy, an AgMg alloy, and an AgZn alloy, and ? is 0<?<0.5.

Abstract: A three dimensional (3D) memory array is disclosed. The 3D memory array may include an electrode plane and a memory material disposed through and coupled to the electrode plane. A memory cell included in the memory material is aligned in a same plane as the electrode plane, and the memory cell is configured to exhibit a first threshold voltage representative of a first logic state and a second threshold voltage representative of a second logic state. A conductive pillar is disposed through and coupled to the memory cell, wherein the conductive pillar and electrode plane are configured to provide a voltage across the memory cell to write a logic state to the memory cell. Methods to operate and to form the 3D memory array are disclosed.

Abstract: A magnetic composition includes first, second, and third magnetic metal particles. The first magnetic metal particles have an average particle size of 10 ?m to 28 ?m; the second magnetic metal particles have an average particle size of 1 ?m to 4.5 ?m; and the third magnetic metal particles include insulating layers disposed on surfaces thereof and have a particle size of 300 nm or less. Therefore, eddy current loss of an inductor having a body formed of the magnetic composition may be improved, and high efficiency and inductance of the inductor may be secured.

Abstract: A recording head has a first magnetic writer and a second magnetic writer offset from the first magnetic writer in a downtrack and crosstrack direction. The recording head has leads configured to deliver respective first and second write and/or laser currents to the first and second writers. The first and second write and/or laser currents enable the first and second writers to simultaneously write to adjacent tracks of a magnetic disk.

Abstract: A tape drive, according to one embodiment, includes: a magnetic head, a drive mechanism for passing a magnetic medium over the magnetic head, and a controller electrically coupled to the magnetic head. The magnetic head further includes a transducer structure having: a lower shield, a current-perpendicular-to-plane sensor above the lower shield, an electrical lead layer between the sensor and the lower shield, and a spacer layer between the electrical lead layer and the lower shield. A conductivity of the electrical lead layer is higher than a conductivity of the spacer layer. Moreover, the electrical lead layer is in electrical communication with the sensor.

Abstract: A current detection system includes: first and second magnetic plates arranged in parallel with a predetermined distance; a bus bar for flowing current; and a magneto-electric conversion element converting a lateral direction component of a measurement object magnetic flux, generated by current flowing through the bus bar, to an electric signal. When an external magnetic flux in a lateral direction passes through an accommodation space between the first and second magnetic plates, a trajectory of the external magnetic flux is bent by the first and second magnetic plates, and the accommodation space is divided into a permeable space, through which the external magnetic flux passes, and a non-permeable space, through which the external magnetic flux does not pass. The bus bar is arranged in the accommodation space. The magneto-electric conversion element is arranged in the non-permeable space. The bus bar and the magneto-electric conversion element are lined in the height direction.

Abstract: An apparatus according to one embodiment includes a transducer structure having a lower shield and an upper shield above the lower shield, the upper and lower shields providing magnetic shielding. A current-perpendicular-to-plane sensor is positioned between the upper and lower shields. An electrical lead layer is positioned between the sensor and one of the shields. The electrical lead layer is in electrical communication with the sensor. A spacer layer is positioned between the electrical lead layer and the one of the shields. A conductivity of the electrical lead layer is higher than a conductivity of the spacer layer.

Abstract: The invention relates to a magnetic multilayer system (1) which is arranged on a substrate (6) which is made of a material from the group consisting of a plastic from the group of polymers, metal, metal alloy and paper and/or which is at least one element from the group consisting of a document and packaging. The invention further relates to packaging which comprises such a magnetic multilayer system (1). According to the invention, the multilayer system (1) is used for proving the authenticity of an object. Likewise according to the invention are a method for marking an object with a magnetic multilayer system for proving the authenticity of an object and a method for reading a magnetic multilayer system for proving the authenticity of an object.

Abstract: A manufacturing method of a BGA, includes the steps of: providing a semiconductor chip having electrode pads; and removing a natural oxide film formed on the surface of each of the electrode pads. Further, a first film comprised of a conductive member is formed on the surface of the electrode pad exposed by removing the natural oxide film, a wire is connected with the first film, and part of the wire is brought into contact with the electrode pad to form an alloy layer at the interface between the wire and the electrode pad. The crystal structure of the first film is comprised of a body-centered cubic lattice or a hexagonal close-packed lattice. The cost of the semiconductor device can be reduced while the bonding reliability of wire bonding of the semiconductor device is ensured.

Abstract: An apparatus according to one embodiment includes a transducer structure having: a lower shield having recesses in an upper surface thereof; an upper shield formed above the lower shield; a current-perpendicular-to-plane sensor between the upper and lower shields, the recesses being positioned on opposite sides of the sensor; and a first insulating layer in the recesses in the upper surface of the lower shield. An apparatus according to another embodiment includes a transducer structure having: a lower shield; an upper shield formed above the lower shield, the upper shield having recesses in a lower surface thereof; a current-perpendicular-to-plane sensor between the upper and lower shields, the recesses being positioned on opposite sides of the sensor; and a first insulating layer in the recesses in the lower surface of the upper shield.

Abstract: A method of forming a semiconductor device structure comprises forming a template material over a substrate, the template material exhibiting preferential wetting to a polymer block of a block copolymer. A positive tone photoresist material is formed over the template material. The positive tone photoresist material is exposed to radiation to form photoexposed regions and non-photoexposed regions of the positive tone photoresist material. The non-photoexposed regions of the positive tone photoresist material are removed with a negative tone developer to form a pattern of photoresist features. The pattern of photoresist features and unprotected portions of the template material are exposed to an oxidizing plasma to form trimmed photoresist features and a pattern of template features. The trimmed photoresist features are removed with a positive tone developer. Other methods of forming a semiconductor device structure, and a semiconductor device structure are also described.

Abstract: A side-by-side magnetic multi-input multi-output (MIMO) read head is provided. The read head may include a pair of side-by-side MIMO read sensors disposed between a bottom shield, a top shield and between a pair of side shields. The read head may also include a pair of electrical leads, each of which is coupled with one of the MIMO read sensors. The electrical leads extend away from an air bearing surface.

Abstract: A method of fabricating a perpendicular magnetic recording (PMR) head with a multi-level tapered write pole which creates an efficient channeling of magnetic flux to the pole tip. A tapered bottom yoke is first formed in an etched substrate and a write pole is formed on the tapered bottom yoke. The write pole comprises a main pole with a tapered tip. A tapered top yoke is then formed on the write pole and symmetrically positioned relative to the bottom yoke. The edge of each yoke is recessed from the ABS of the tapered tip, giving the write pole a stepped profile. The tapered tip can be two sloped surfaces that are symmetric about a mid-plane of the main pole or a single sloped edge on the leading side or the trailing side of the pole.

Abstract: A read transducer having a first read sensor, a second read sensor, and a first middle shield is provided. The second read sensor is disposed in a down track direction from the first read sensor. The first middle shield is disposed between the first read sensor and the second read sensor. The first middle shield includes a first metallic middle shield layer disposed between the first read sensor and the second read sensor, a second metallic middle shield layer disposed between the first metallic middle shield layer and the second read sensor, and a first magnetic-spacer layer disposed between the first metallic middle shield layer and the second metallic middle shield layer. The first metallic middle shield layer and the second metallic middle shield layer have substantially the same polarity.

Abstract: A current-perpendicular-to-the plane magnetoresistive sensor has top and bottom electrodes narrower than the sensor trackwidth. The electrodes are formed of one of Cu, Au, Ag and AgSn, which have an ion milling etch rate much higher than the etch rates for the sensor's ferromagnetic materials. Ion milling is performed at a high angle relative to a line orthogonal to the plane of the electrode layers and the layers in the sensor stack. Because of the much higher etch rate of the material of the top and bottom electrode layers, the electrode layers will have side edges that are recessed from the side edges of the free layer. This reduces the surface areas for the top and bottom electrodes, which causes the sense current passing through the sensor's free layer to be confined in a narrower channel, which is equivalent to having a sensor with narrower physical trackwidth.

Abstract: In one embodiment, a magnetic head includes a lower shield layer positioned at a media-facing surface of the magnetic head, at least two magnetoresistive (MR) elements positioned above the lower shield layer, each MR element extending in an element height direction away from the media-facing surface of the magnetic head, back wiring layers positioned above at least one lower layer of each of the MR elements at a position away from the media-facing surface of the magnetic head in the element height direction, wherein the back wiring layers are configured to electrically communicate with the MR elements and configured to separately extract signals from each MR element during a read operation, and an upper shield layer positioned above the MR elements that is configured to electrically communicate with the MR elements.

Abstract: A method and system provide a magnetic transducer including first and second read sensors, a shield and a conductive via. The shield is between the first and second read sensors. In one aspect, the magnetic transducer also includes first and second read shields. In this aspect, the first read shield has a read shield aperture. The conductive via extends through the read shield aperture, provides electrical contact to the shield and is insulated from the first read shield. In another aspect, the shield has first and second shield layers separated by an insulating layer. In this aspect, the second shield layer has an aperture therein. The conductive via extends through this aperture, provides electrical contact to the first shield layer and is insulated from the second shield layer.

Abstract: A method to measure a magnetic field is provided. The method includes applying an alternating drive current to a drive strap overlaying a magnetoresistive sensor to shift an operating point of the magnetoresistive sensor to a low noise region. An alternating magnetic drive field is generated in the magnetoresistive sensor by the alternating drive current. When the magnetic field to be measured is superimposed on the alternating magnetic drive field in the magnetoresistive sensor, the method further comprises extracting a second harmonic component of an output of the magnetoresistive sensor. The magnetic field to be measured is proportional to a signed amplitude of the extracted second harmonic component.

Abstract: A magnetic element may generally be directed to data bit sensing in various data storage environments. An example magnetic element may be configured with at least a magnetic stack contacting a magnetic shield having a current constriction feature configured to transition current from a horizontal orientation to a vertical orientation proximal an air bearing surface (ABS).

Abstract: Various embodiments can have a data read stack positioned on an air bearing surface (ABS). The data read stack may be disposed between first and second buffer layers, where at least one of the buffer layers can be configured to provide a predetermined shunt ratio for the data read stack.

Abstract: A tape drive head includes a set of one or more servo readers designed for reading a servo pattern of a linear recording tape for positioning of the tape drive head, each of the servo readers of the set having: a sensor for sensing a magnetic field component of a servo pattern upon reading it; a first shield and a second shield, one on each side of the sensor, the shields configured to shield spurious components of magnetic fields occurring upon reading the linear recording tape, wherein: a gap between the first shield and the second shield is between 0.4 ?m and 1 ?m, and a minimal width of the sensor, the first shield and the second shield, in a direction perpendicular to the gap, is between 0.5 ?m and 4 ?m.

Abstract: A magnetoresistive read sensor with improved sensitivity and stability is described. The sensor is a trilayer stack positioned between two electrodes. The trilayer stack has two free layers separated by a nonmagnetic layer and a biasing magnet positioned at the rear of the stack and separated from the air bearing surface. Current in the sensor is confined to regions close to the air bearing surface by an insulator layer to enhance reader sensitivity.

Abstract: According to one embodiment, a magneto-resistive effect device includes a stacked body, a pair of electrodes for supplying current in a stacking direction of the stacked body. The stacked body includes a first magnetic layer, a second magnetic layer, and a spacer layer disposed between the first magnetic layer and the second magnetic layer. At least one of the first magnetic layer, the second magnetic layer, and the spacer layer includes an oxide layer formed from a metal oxide. A crystalline structure of the metal oxide is a NaCl structure.

Abstract: According to one embodiment, a magnetoresistive effect head includes a lower magnetic shield provided on a substrate, a magnetoresistive effect film laminated from a pinned layer with a pinned direction of magnetization, an intermediate layer, a free layer having a varying direction of magnetization controlled by an applied external magnetic field, a magnetic domain control layer formed with an intervening insulation layer on both sides in a track width direction of the magnetoresistive effect film, an upper magnetic shield, and electrodes for directing sense current flow in a direction perpendicular to a film surface of the magnetoresistive effect film, wherein a magnetic field applied by the magnetic domain control layer to a region away from an ABS of the free layer is at least 1.4 times larger than a magnetic field applied by the magnetic domain control layer to a region near the ABS of the free layer.

Abstract: According to one embodiment, a magnetoresistive element includes a first ferromagnetic layer a magnetization direction of which is pinned, a second ferromagnetic layer a magnetization direction of which is changed depending on an external magnetic field, an intermediate layer arranged between the first ferromagnetic layer and the second ferromagnetic layer and including an insulating layer and a magnetic conductive column, an alloy layer formed between the magnetic conductive column in the intermediate layer and the second ferromagnetic layer and including at least one of FeCoAl and FeCoAlCu, and a pair of electrodes configured to supply a current perpendicularly to a film plane of a stacked film including the first ferromagnetic layer, the intermediate layer, the alloy layer and the second ferromagnetic layer.

Abstract: A magnetoresistive element includes a first ferromagnetic layer, a second ferromagnetic layer, a nonmagnetic layer, a first metal layer, a second metal layer, a first electrode, and a second electrode. The nonmagnetic layer is provided between the first ferromagnetic layer and the second ferromagnetic layer. The first metal layer includes Au and is provided so that the first ferromagnetic layer is sandwiched between the nonmagnetic layer and the first metal layer. The second metal layer includes a CuNi alloy, and is provided so that the first metal layer is sandwiched between the first ferromagnetic layer and the second metal layer. In addition, magnetization of either one of the first ferromagnetic layer and the second ferromagnetic layer is fixed in a direction. Magnetization of the other is variable in response to an external field. At least one of the first ferromagnetic layer and the second ferromagnetic layer includes a half metal.

Abstract: A magnetic head disposed in a slider arranged with an interval with respect to a magnetic disk includes a sensor that is positioned in a stepped-back position from an air bearing surface facing the magnetic disk, an insulating film that is positioned on the air bearing surface and that covers the sensor; a pair of lead films, the lead films being electrically connected to the sensor such that at least portions of the lead films are exposed on the air bearing surface, and being configured to transfer a temperature change of the air bearing surface to the sensor.

Abstract: A magneto-resistive (MR) device for reading at least one of a legacy data and a present data magnetically recorded on at least one legacy track and a least one present track, respectively, is provided. The device comprises first and second MR elements, and first, second, and third permanent magnets. The first MR read element is positioned between the first and the second permanent magnets to stabilize the first MR read element while reading the legacy data from the media. The second MR element is positioned adjacent to the second permanent magnet and configured to read the present data from the media. The third permanent magnet is positioned adjacent to the second MR element and opposite to the second permanent magnet. The second and the third permanent magnets cooperate with each other to stabilize the second MR read element while reading the present data from the media.

Abstract: Embodiments of the present invention provide an accumulation element with high resolving power and high output suitable for magnetic recording and reproducing at high recording density. According to one embodiment, a plurality of spin injection parts and are provided to increase the total amount of spin electrons. The spin accumulation element is composed of a non-magnetic conductor, a first magnetic conductor, a second magnetic conductor, and a third magnetic conductor, each of which are in contact with the non-magnetic conductor through the tunneling junction. An output voltage due to the spin accumulation effect is detected as a potential difference between the non-magnetic conductor and the third magnetic conductor.

Abstract: A magnetoresistance device has a channel extending between first and second ends in a first direction comprising non-ferromagnetic semiconducting material, such as silicon, a plurality of leads connected to and spaced apart along the channel, a gate structure for applying an electric field to the channel in a second direction which is substantially perpendicular to the first direction so as to form an inversion layer in the channel and a face which lies substantially in a plane defined by the first and second directions and which is configured such that an edge of the channel runs along the face.

Abstract: Biasing schemes used for CIP GMR devices were previously thought to be impractical for CPP devices due to current shunting by the abutted hard magnets. In the present invention the CPP stripe is a narrow conductor directly above the free layer. The resistivity of the latter is made to be relatively high so the sensing current diverges very little as it passes through it. This makes it possible to use abutted hard magnets for longitudinal bias with virtually no loss of sensing current due to shunting by the magnets.

Abstract: An extraordinary magnetoresistive sensor (EMR sensor) having a lead structure that is self aligned with a magnetic shunt structure. To form an EMR sensor according to an embodiment of the invention, a plurality of layers are deposited to form quantum well structure such as a two dimensional electron gas structure (2DEG). A first mask structure is deposited having two openings, and a material removal process is performed to remove portions of the sensor material from areas exposed by the openings. The distance between the two openings in the first mask defines a distance between a set of leads and the shunt structure. A non-magnetic metal is then deposited. A second mask structure is then formed to define shape of the leads.

Abstract: A magnetic head having precisely controlled MR height has a slider substrate and a magnetic head part provided on the slider substrate. The magnetic head part includes, seeing from a medium-opposing surface side, a magnetism detecting element; an upper magnetic shield layer arranged on the magnetism detecting element; an electrode layer separated in a track width direction from the upper magnetic shield layer; and a conductor layer, arranged closer to the slider substrate than are the upper magnetic shield layer and electrode layer, extending in the track width direction so as to be in contact with the upper magnetic shield layer and electrode layer and forming a part of the medium-opposing surface.

Abstract: An extraordinary magnetoresistive sensor (EMR sensor) having reduced size and increased resolution is described. The sensor includes a plurality of electrically conductive leads contacting a magnetically active layer and also includes an electrically conductive shunt structure. The electrically conductive leads of the sensor and the shunt structure can be formed in a common photolithographic masking and etching process so that they are self aligned with one another. This avoids the need to align multiple photolithographic processing steps, thereby allowing greatly increased resolution and reduced lead spacing. The EMR sensor can be formed with a magnetically active layer that can be close to or at the air bearing surface (ABS) for improved magnetic spacing with an adjacent magnetic medium of a data recording system.

Abstract: A method of making a magnetic head according to one embodiment comprises forming a shield layer having first and second recesses in first and second end regions which surround a central region; depositing first and second lead layers in the first and the second recesses; and forming a read sensor in the central region such that a first edge of the read sensor is positioned above an edge of the first lead layer and a second edge of the read sensor is positioned above an edge of the second lead layer.

Abstract: A magnetic read head of either CIP or CPP configuration is disclosed having a read sensor having oxidized non-conductive regions. The read sensor has a front edge, a rear edge, a left-side edge and a right-side edge. For a CIP configuration, the front edge and the rear edge are oxidized to form non-conductive regions. For a CPP configuration, the left-side edge, the right-side edge, the front edge and the rear edge are oxidized to form non-conductive regions. Also disclosed are a disk drive including a read sensor having oxidized non-conductive regions, and a method of fabrication for a read sensor having oxidized non-conductive regions.

Abstract: An improved magnetic head for a hard disk drive including a lead overlaid read head in which the read width and read gap are reduced. The read width, which corresponds to the distance between the inner ends of the overlaid electrical leads, is reduced by the fabrication of a thin read width insulation member prior to the fabrication of the overlaid electrical leads. The read gap is reduced by fabricating the overlaid electrical leads from a magnetic, electrically conductive material such as NiFe, whereby the overlaid electrical leads also function as a magnetic shield. The read gap, which is the distance between the first and second magnetic shields is thus reduced as compared to the prior art by the thickness of the electrical leads and the thickness of the prior art second insulation layer formed between the electrical leads and the second magnetic shield.

Abstract: Current-perpendicular-to-plane (CPP) read sensors for magnetic heads having constrained current paths made of lithographically-defined conductive vias, and methods of making the same, are disclosed. In one example, a sensor stack structure which includes an electrically conductive spacer layer is formed over a first shield layer. An insulator layer is deposited over and adjacent the spacer layer, and a resist structure which exposes one or more portions of the insulator layer is formed over the insulator layer. With the resist structure in place, the exposed insulator layer portions are removed by etching to form one or more apertures through the insulator layer down to the spacer layer. Electrically conductive materials are subsequently deposited within the one or more apertures to form one or more lithographically-defined conductive vias of a current-constraining structure.

Abstract: An area of an element can be made small and fluctuation in area can be reduced. A magneto-resistance effect element is provided with a first electrode with an end face; a magneto-resistance effect film which is formed such that a surface thereof comes in contact with the end face of the first electrode; and a second electrode which is formed on another surface of the magneto-resistance effect element opposed from the surface coming in contact with the surface of the first electrode. The magneto-resistance effect film includes a magnetization pinned layer whose magnetization direction is pinned, a magnetization free layer whose magnetization direction is changeable, and a first non-magnetic layer which is provided between the magnetization pinned layer and the magnetization free layer.

Abstract: A magnetoresistance device is provided for improving thermal stability of a magnetoresistance element by preventing inter-diffusion between a conductor (such as a via and an interconnection) for connecting the magnetoresistance element to another element and layers constituting the magnetoresistance element. A magnetoresistance device is composed of a magnetoresistance element, a non-magnetic conductor providing electrical connection between the magnetoresistance element to another element, and a diffusion barrier structure disposed between the conductor and the magnetoresistance element, the magnetoresistance element including a free ferromagnetic layer having reversible spontaneous magnetization, a fixed ferromagnetic layer having fixed spontaneous magnetization, and a tunnel dielectric layer disposed between the free and fixed ferroelectric layers.

Abstract: A magnetoresistive element has a first magnetic layer and a second magnetic layer separate from each other, the first magnetic layer and the second magnetic layer each having a magnetization whose direction is substantially pinned, and a non-magnetic conductive layer formed in contact with the first magnetic layer and the second magnetic layer and electrically connecting the first and second magnetic layers, the non-magnetic conductive layer forming a path of spin-polarized electrons from one of the magnetic layer to the other magnetic layer, the non-magnetic conductive layer comprising a portion located between the first magnetic layer and the second magnetic layer, the portion being a sensing area.

Abstract: In one illustrative example, a three terminal magnetic sensor (TTM) suitable for use in a magnetic head has a sensor stack structure which includes a base region, a collector region, and an emitter region. A first barrier layer separates the emitter region from the base region, and a second barrier layer separates the collector region from the base region. A plurality of terminals of the TTM include a base lead coupled to the base region, a collector lead coupled to the collector region, and an emitter lead coupled to the emitter region. Preferably, the base region consists of a free layer structure so as to have a relatively small thickness. A pinned layer structure is made part of the emitter region. An in-stack longitudinal biasing layer (LBL) structure is formed in stack with the sensor stack structure and has a magnetic moment that is parallel to a sensing plane of the TTM for magnetically biasing the free layer structure.