Abstract: A magnetic head including a lead overlaid read head component in which the electrical current passing through the overlaid passive regions of the sensor layers is reduced. The parts of the electrical leads that overlay the sensor layers are comprised of gold. The exceptional electrical conductivity of gold allows most sensor electrical current to flow through the overlaid leads and significantly reduces the amount of sensor electrical current that passes through the overlaid sensor layers. The operational characteristics of the read head are improved because the overlaid passive regions of the sensor layers do not contribute to the sensor signal. Noise and side reading effects are thereby reduced. In alternative embodiments of the present invention of gold is also used to overlay portions of the electrical leads that are away from the overlaid portions. This further reduces the sensor electrical current that passes through the overlaid sensor layers.

Abstract: A self aligned magnetoresistive sensor having a narrow and well defined track width and method of manufacture thereof.

Abstract: In a magnetic sensor, a lower terminal layer, a magnetosensitive layer, and a cover film are simultaneously patterned into substantially the same size. The opposing surface of the lower terminal layer, which opposes the magnetosensitive film is substantially superposed on one opposing surface of the magnetosensitive film. The opposing surface of the upper terminal layer, which opposes the magnetosensitive film is formed into a shape smaller than and included in the other opposing surface of the magnetosensitive film. This implements a magnetic sensor which uses a CPP structure and is yet readily processible and which includes a substantially accurate fine CPP structure in accordance with a desired output.

Abstract: A read head, which has a head surface facing a moving magnetic medium, includes a read sensor that has first and second side top surface portions and a central top surface portion located between the first and second side top surface portions. First and second overlaying lead layers interface the first and second side top surface portions. First and second hard bias and tapered lead layers interface the first and second overlaying lead layers. A central top surface portion of the read sensor has a width that defines a track width of the read sensor. A method of making the read head includes ion-milling a partially oxidized portion of a cap layer and, after depositing the aforementioned first and second hard bias and tapered lead layers, preferentially reactive ion etching (RIE) the overlaying lead layer not covered by the first and second hard bias and tapered lead layers, so as to define the central top surface portion of the read sensor.

Abstract: The thin-film magnetic head of the present invention is provided with an antiferromagnetic layer, a pinned layer whose direction of magnetization is fixed by exchange-coupling with the antiferromagnetic layer, a free layer whose direction of magnetization varies according to external magnetic field, an intermediate layer disposed between the pinned layer and free layer, and a pair of electrode layers for supplying a sense current in a layer thickness direction of the free layer. One electrode layer is connected to the pinned layer. Due to this configuration, a sense current flows through the free layer, the intermediate layer, and the pinned layer, but basically does not flow through the antiferromagnetic layer. As a consequence, the antiferromagnetic layer does not contribute to total resistance of the magnetoresistance element, allowing a high magnetoresistance ratio to be obtained.

Abstract: In bottom spin valves of the lead overlay type the longitudinal bias field that stabilizes the device tends to fall off well before the gap is reached. This problem has been overcome by inserting an additional antiferromagnetic layer between the hard bias plugs and the overlaid leads. This additional antiferromagnetic layer and the lead layer are etched in the same operation to define the read gap, eliminating the possibility of misalignment between them. The extra antiferromagnetic layer is also longitudinally biased so there is no falloff in bias strength before the edge of the gap is reached. A process for manufacturing the device is also described.

Abstract: A base film of a hard magnetic film containing Co as a structural element has a crystal metal base film such as a Cr film formed on the main surface of a substrate and a reactive base film (mixing layer) formed between the substrate and the crystal metal base film and having a reactive amorphous layer containing a structural element of the substrate and a structural element of the crystal metal base film. A hard magnetic film containing Co as a structural element is formed on the crystal metal base film. With the crystal metal base film such as the Cr film formed on an amorphous layer, a hard magnetic film with a bi-crystal structure can be obtained with high reproducibility. With the hard magnetic film, magnetic characteristics such as coercive force Hc, residual magnetization Mr, saturated magnetization Ms, and square ratio S can be improved without need to use a thick base film.

Abstract: A smaller electrode layer of an upper electrode is formed on a surface of a free magnetic layer. A domain controlling film of an insulating material is formed adjacent to the smaller electrode layer on the surface of the free magnetic layer. Magnetization of the free magnetic layer is oriented in a single direction based on magnetic exchange coupling between the domain controlling film and the free magnetic layer. An electric connection is established between the free magnetic layer and the upper electrode only through the smaller electrode layer. The path of a sensing current can be reduced in the free and a pinned magnetic layer. A higher sensitivity can thus be obtained in the CPP structure magnetoresistive element. Effective magnetic core width can also be reduced in the CPP structure magnetoresistive element.

Abstract: A magnetic read head with reduced side reading characteristics is described. This design combines use of a current channeling layer (CCL) with stabilizing longitudinal bias layers whose magnetization direction is canted relative to that of the free layer easy axis and that of the pinned layer (of the GMR). This provides several advantages: First, the canting of the free layer at the side region results in a reduction of side reading by reducing magnetic sensitivity in that region. Second, the CCL leads to a narrow current flow profile at the side region, therefore producing a narrow track width definition. A process for making this device is described. Said process allows some of the requirements for interface cleaning associated with prior art processes to be relaxed.

Abstract: A thin-film electrode layer having a superior electromigration resistance is disclosed. The thin-film electrode layer includes a first base layer composed of ?-Ta, a main conductive layer composed of Au, and a protective layer. The protective layer is a composite of a Cr sublayer and an ?-Ta sublayer. A thin-film magnetic head having the thin-film electrode layers and a method for forming electrodes in the thin-film magnetic head are also disclosed.

Abstract: A magnetoresistive (MR) sensor having a decreased electrical profile due to a confining of the device sense current within a conductive nanoconstriction. The MR sensor includes a giant magnetoresistive (GMR) stack and a layer of high resistivity material within the GMR stack. The layer of high resistivity material includes a nanoconstriction precursor. When a punch current is applied at the nanoconstriction precursor, a conductive nanoconstriction is formed through the layer of high resistivity material at the nanoconstriction precursor.

Abstract: A magnetic head including an electrical lead layer that is comprised of a material having an ordered crystalline structure. In a preferred embodiment, the ordered crystalline structure of the electrical lead is epitaxially matched to the crystalline structure of the hard bias layer upon which it is formed, and there is no need for a seed layer for the electrical leads. Electrical leads having an ordered crystalline structure, particularly a B2, L10, L11, L12 and D03 structure, will have significantly reduced resistivity over the prior art electrical leads that are typically composed of rhodium or tantalum. As a result, thinner electrical leads can be fabricated which carry the same, or even greater, current than the prior art rhodium or tantalum leads. The preferred leads are comprised of NiAl having a B2 crystalline structure, and alternative embodiments are comprised of CuAu, Cu3Au, Ni3Al and Fe3Al.

Abstract: A magnetoresistive sensor having bias stabilization tabs includes a protective cap layer. The protective cap layer prevents oxidation, avoids potential damage from using ion milling for oxidation removal, and lowers parasitic resistance. In one embodiment, a bias layer, having a central portion with quenched magnetic moment, is formed over the free layer with an intervening coupling layer. A disk drive is provided with the magnetoresistive sensor including a protective cap layer.

Abstract: In one illustrative example, a method of making a read sensor of a magnetic head involves forming a barrier structure which surrounds a central mask formed over a plurality of read sensor layers; etching the read sensor layers to form the read sensor below the mask; and depositing, with use of the mask and the barrier structure, hard bias and lead layers to form around the read sensor. The barrier structure may be formed by, for example, depositing one or more barrier structure layers over the read sensor layers and performing a photolithography process. The barrier structure physically blocks materials being deposited at relatively low angles (e.g. angles at or below 71 degrees) so as to reduce their formation far underneath the mask (e.g. when using a bridged mask), which could otherwise form an electrical short, and/or to improve the symmetry of the deposited materials around the read sensor.

Abstract: A method for forming a top spin-valve SyAP GMR read sensor having a novel conductive lead overlay configuration and the sensor so formed. The lead overlay electrically contacts the sensor at a position within the SyAP pinned layer, thus simultaneously assuring improved electrical contact and destroying the GMR properties of the sensor at the junction to improve the definition of the sensor track width.

Abstract: There is provided a magnetoresistance effect element capable of precisely defining the active region in a CPP type MR element and of effectively suppressing and eliminating the influence of a magnetic field due to current from an electrode, and a magnetic head and magnetic reproducing system using the same. The active region of the MR element is defined by the area of a portion through which a sense current flows. Moreover, the shape of the cross section of a pillar electrode or pillar non-magnetic material for defining the active region of the element is designed to extend along the flow of a magnetic flux so as to efficiently read only a signal from a track directly below the active region. When the magnetic field due to current from the pillar electrode can not be ignored, the magnetic flux from a recording medium asymmetrically enters yokes and the magnetization free layer of the MR element to some extent.

Abstract: The inner side end faces of electrode layers are formed in a region under which bias layers are not formed, to be located behind a magnetoresistive film in the height direction. Therefore, a sensing current flowing from the electrode layers can be appropriately inhibited from shunting to the bias layers, thereby permitting the manufacture of a magnetic sensing element capable of complying with track narrowing and suppressing variations in the track width Tw.

Abstract: A lead overlay magnetoresistive sensor has leads with substantially vertical end walls to accentuate sense current near the ends of the leads. Insulating layers isolate the hard bias layers from the path of the sense current. A lead overlay magnetoresistive sensor does not exhibit significant trackwidth widening. A disk drive has a read element including a lead overlay magnetoresistive sensor with leads having substantially vertical end walls.

Abstract: The present invention includes a magnetic sensing structure having a stripe height and a stripe width defining an area for a current flowing therethrough, and at least one electrode positioned adjacent an edge of the magnetic sensing structure for adjustably controlling the stripe width and/or stripe height, and therefore the area (SW×SH), of the magnetic sensing structure through which the current can flow.

Abstract: A lead overlay magnetic sensor for use in a disk drive is provided having a protective cap layer disposed between the electrical leads and the sensor. The protective cap layer is preferably formed from ruthenium, rhodium, or other suitable material. The sensors thus formed have low resistance between the electrical leads and the sensor and also have well defined magnetic trackwidths.

Abstract: A spin-valve magnetoresistive read element has a thin conductive lead layer of high sheet conductivity, high hardness, high melting point, high corrosion resistance and lacking the propensity for smearing, oozing, electromigration and nodule formation. Said lead layer is formed upon the hard magnetic longitudinal bias layer of an abutted junction spin-valve type magnetoresistive read head and said read head is therefore suitable for reading high density recorded disks at high RPM.

Abstract: In a magnetic tunnel effect type magnetic head 20 having a magnetic tunnel junction element 26 sandwiched with conductive gap layers 25 and 27 between a pair of magnetic shielding layers 24 and 28, the conductive gap layers 25 and 27 are formed from at least one nonmagnetic metal layer containing a metal element selected from Ta, Ti, Cr, W, Mo, V, Nb and Zr. Therefore, the magnetic head 20 can have an improved face opposite to a magnetic recording medium.

Abstract: A method for fabricating a longitudinally hard biased, bottom spin valve GMR sensor with a lead overlay (LOL) conducting lead configuration and a narrow effective trackwidth. The advantageous properties of the sensor are obtained by providing two novel barrier layers, one of which prevents oxidation of and Au diffusion into the free layer during annealing and etching and the other of which prevents oxidation of the capping layer during annealing so as to allow good electrical contact between the lead and the sensor stack.

Abstract: A magnetoresisive device comprises an MR element, bias field applying layers located adjacent to the side portions of the MR element, and two electrode layers that feed a sense current to the MR element. The electrode layers overlap one of the surfaces of the MR element. The total overlap amount of the two electrode layers is smaller than 0.3 ?m. The MR element is a spin-valve GMR element. The MR element incorporates a base layer, a free layer, a spacer layer, a pinned layer, an antiferromagnetic layer, and a cap layer that are stacked in this order. The pinned layer includes a nonmagnetic spacer layer, and two ferromagnetic layers that sandwich this spacer layer.

Abstract: A fabricating process of a magnetic head includes the steps of forming a magneto-resistive film, forming a resist film on the magneto-resistive film, patterning the resist film to form a resist pattern, conducting a process while using the resist pattern as a mask, causing a shrinkage in the resist pattern, and conducting a second process while using the shrunken resist pattern as a mask.

Abstract: A thin film magnetic head has a reading element including a magnetoresistive effective film, a pair of magnetic domain-controlling films and a pair of electrode films. The magnetic domain-controlling films are provided both sides of the magnetoresistive effective film in a track width direction, respectively, so that the depth of the magnetic domain-controlling films is set equal to the depth of the magnetoresistive effective film in a depth direction perpendicular to the track width direction. The electrode films are provided on the magnetic domain-controlling films so as to have elongated portions, respectively, beyond a region where the depth of the magnetic domain-controlling films is set equal to the depth of the magnetoresistive effective film.

Abstract: A magnetic head is provided with a giant magnetoresistive element, barrier layer, and highly polarized spin injection layer, The barrier layer is inserted between the giant magnetoresistive element and the injection layer. By applying a sensing current to both the magnetoresistive element and the injection layer, an output of the magnetic head can be multiplied significnantly. The output of the head is increased by increasing a resistance change rate of a magnetoresistive element used as a reading element. The increasing of the resistane change rate is due to that a band of s electrons in the Cu film grown in the highly polarized spin injection layer is placed in a highly polarized state near the Fermi level and the upward spin current only flows into the giant magnetoresistive element, which has multiplied the output.

Abstract: There is provided a magnetoresistance effect element capable of precisely defining the active region in a CPP type MR element and of effectively suppressing and eliminating the influence of a magnetic field due to current from an electrode, and a magnetic head and magnetic reproducing system using the same. The active region of the MR element is defined by the area of a portion through which a sense current flows. Moreover, the shape of the cross section of a pillar electrode or pillar non-magnetic material for defining the active region of the element is designed to extend along the flow of a magnetic flux so as to efficiently read only a signal from a track directly below the active region. When the magnetic field due to current from the pillar electrode can not be ignored, the magnetic flux from a recording medium asymmetrically enters yokes and the magnetization free layer of the MR element to some extent.

Abstract: Methods of making a read head with improved contiguous junctions are described. After sensor layer materials are deposited over a substrate, a lift-off mask is formed over the sensor layer materials in a central region which is surrounded by end regions. Ion milling is performed with use of the lift-off mask such that the sensor layer materials in the end regions are removed and those in the central region remain to form a read sensor. A high-angle ion mill (e.g. between 45–80 degrees) is then performed to remove redeposited material from side walls of the lift-off mask. Next, a reactive ion etch (RIE) is used to reduce the thickness and the width of the lift-off mask and to remove capping layer materials from the top edges of the read sensor. With the reduced-size lift-off mask in place, hard bias and lead layers are deposited adjacent the read sensor as well as over the mask.

Abstract: Two embodiments of a GMR sensor of the bottom spin valve (BSV) spin filter spin valve (SFSV) type are provided, together with methods for their fabrication. In one embodiment, the sensor has an ultra thin (<20 angstroms) single free layer and a composite high-conductance layer (HCL), providing high output, low coercivity and positive magnetostriction. In a second embodiment, the sensor has a composite free layer and a single HCL, also having high output, low coercivity and positive magnetostriction. The sensors are capable of reading densities exceeding 60 Gb/in2.

Abstract: The GMR read head includes a GMR read sensor and a longitudinal bias (LB) stack in a read region, and the GMR read sensor, the LB stack and a first conductor layer in two overlay regions. In its fabrication process, the GMR read sensor, the LB stack and the first conductor layer are sequentially deposited on a bottom gap layer. A monolayer photoresist is deposited, exposed and developed in order to open a read trench region for the definition of a read width, and RIE is then applied to remove the first conductor layer in the read trench region. After liftoff of the monolayer photoresist, bilayer photoresists are deposited, exposed and developed in order to mask the read and overlay regions, and a second conductor layer is deposited in two unmasked side regions. As a result, side reading is eliminated and a read width is sharply defined by RIE.

Abstract: Magnetoresistive (MR) sensors have leads that overlap a MR structure and distribute current to the MR structure so that the current is not concentrated in small portions of the leads. An electrically resistive capping layer can be formed between the leads and the MR structure to distribute the current. The leads can include resistive layers and conductive layers, the resistive layers having a thickness-to-resistivity ratio that is greater than that of each of the conductive layers. The resistive layers may protect the conductive layers during MR structure etching, so that the leads have broad layers of electrically conductive material for connection to MR structures. The broad leads conduct heat better than the read gap material that they replace, further reducing the temperature at the connection between the leads and the MR structure.

Abstract: A read head has a bottom lead made of material that is relatively polish resistant and a top lead layer that polishes down more easily than the bottom layer. With this structure, when the layers are deposited and then polished down, the top layer recesses away from the sensor (and bottom lead layer) in a controlled fashion, providing an acceptable lead structure that reduces the mismatch between the read head physical read width and magnetic read width.

Abstract: A spin-valve thin-film magnetic element includes a laminate including a free magnetic layer and a pinned magnetic layer. A pair of hard bias layers is provided on both sides of the laminate to orient the magnetic moment of the free magnetic layer in one direction. A pair of insulating layers extend over the hard bias layers and both top ends of the laminate in the track width direction. A pair of lead layers is provided on the insulating layers. Each lead layer has an overlay section extending over the insulating layer and the laminate. The edge of the overlay section is in direct contact with the central portion of the laminate.

Abstract: A magneto-resistive magnetic sensor has an overlay-type structure and includes a cap layer on a top surface of a magneto-resistive structure and a pair of electrodes provided on said cap layer with a separation from each other, wherein there is interposed an oxidation-resistant conductive film underneath each electrode, such that the oxidation-resistant conductive film is sandwiched between the cap film and the electrode.

Abstract: The present invention provides a method of manufacturing a magnetoresistive read head which reduces electrostatic discharge and allows measurement of gap resistances in the head.

Abstract: Magnetoresistive (MR) sensors are disclosed that have leads that overlap a MR structure and distribute current to and from the MR structure so that the current is not concentrated in small portions of the leads, alleviating the problems mentioned above. For example, the leads can be formed of a body-centered cubic (bcc) form of tantalum, combined with gold or other highly conductive materials. For the situation in which a thicker bcc tantalum layer covers a highly conductive gold layer, the tantalum layer protects the gold layer during MR structure etching, so that the leads can have broad layers of electrically conductive material for connection to MR structures. The broad leads also conduct heat better than the read gap material that they replace, further reducing the temperature at the connection between the leads and the MR structure.

Abstract: A magnetic head is made of a shield layer having first and second recesses defined in first and second end regions which surround a central region. Bias and lead layers are formed in the first and the second recesses, and a read sensor is formed in the central region. Advantageously, edges of the bias and lead layers are formed below edges of the read sensor to thereby define a magnetic track width of the read sensor. Also, the sensor profile is substantially flat so that a gap layer over the read sensor can provide for adequate insulation.

Abstract: A differential current-perpendicular-to-the-plane (CPP) giant magnetoresistive (GMR) sensor is provided having nonmagnetic high conductivity leads to achieve low lead resistance. The differential CPP GMR sensor comprises a first spin valve (SV) sensor, a second SV sensor and a metal gap layer disposed between the first and the second SV sensors. Because of the differential operation of the CPP GMR sensor of this invention, there is no need for shield layers to screen the sensor from stray magnetic fields. The shield layers are replaced with thick nonmagnetic lead layers having high conductivity to reduce the lead resistance of the sensor. Suitable materials for forming the leads include tungsten (W), gold (Au), rhodium (Rh), copper (Cu) and tantalum (Ta) because of their conductivity properties and because they are robust with respect to corrosion and smearing.

Abstract: A read head comprises an MR element, two bias field applying layers, and two conductive layers. The two bias field applying layers are adjacent to both side portions of the MR element, and apply a bias magnetic field to the MR element along the longitudinal direction. The two conductive layers feed a sense current to the MR element, each of the conductive layers being disposed to be adjacent to one of surfaces of each of the bias field applying layers and to overlap one of surfaces of the MR element. The conductive layers are each made of a gold alloy having a resistivity of less than 22 ??·cm and a hardness as high as or higher than the hardness of a material used for making the bias field applying layers.

Abstract: In fabricating the magnetic head, a first magnetic shield layer (S1) is fabricated upon a substrate base, followed by a thin first insulation layer (G1). A photoresist mask is fabricated upon the G1 layer and electrical lead recesses are milled through the G1 layer and into the S1 layer. An insulation layer is deposited into the electrical lead recesses, followed by the fabrication of electrical leads within the recesses. The photoresist is removed and a magnetoresistive (MR) sensor is subsequently fabricated on top of the G1 layer, such that portions of the MR sensor are fabricated on top of portions of the electrical leads. Hard bias elements are then fabricated at outboard edges of the MR sensor. A thin second insulation layer (G2) is fabricated on top of the MR sensor and hard bias elements, and a second magnetic shield layer (S2) is fabricated on top of the G2 layer.

Abstract: A magnetoresistance effect element includes a magnetization fixed layer in which the direction of magnetization is substantially fixed to one direction, a magnetization free layer in which the direction of magnetization varies in response to an external magnetic field, and a non-magnetic intermediate layer formed between the magnetization fixed layer and the magnetization free layer. The magnetoresistance effect element has a resistance varying in response to a relative angle between the direction of magnetization in the magnetization fixed layer and the direction of magnetization in the magnetization free layer, the resistance being detected when a sense current is applied to the film planes of the magnetization fixed layer, the non-magnetic intermediate layer, and the magnetization free layer in a direction substantially perpendicular thereto.

Abstract: A method and apparatus for characterization of a thermal response of giant magnetoresistive (GMR) sensors in magnetic read/write heads is provided. The method and apparatus make use of a probe to measure temperatures at a base and a tip of the probe. With the method and apparatus, a temperature of magnetic shields of the read/write head are cooled to a temperature lower than an ambient temperature. A current is then applied to the GMR sensor to increase a temperature of an air bearing surface such that the heat flow through the probe is zero. The amount of current applied, the resistance of the GMR sensor, the magnetic shield temperature, and the ambient temperature are used to calculate a thermal conductance of dielectric material in the read/write head. The thermal conductance is then utilized to estimate the signal to noise ratio of the GMR sensor and determine a maximum bandwidth of the read/write head.

Abstract: A magnetoresistive transducer includes a magnetoresistive (MR) film interposed between domain control layers along the surface of a lower non-magnetic gap layer. Lead layers are formed on the domain control layers. An upper non-magnetic gap layer and an upper shield layer are sequentially formed to extend over the MR film and the lead layers. The upper shield layer is opposed to the surfaces of the MR element and the lead layers at a flat boundary or interface. The residual magnetization is supposed to exist in the upper shield layer in the direction of the magnetization established in the domain control layers after the upper shield layer has been subjected to the applied magnetic field for the magnetization of the domain control layers. The residual magnetization can be kept continuous along the flat interface of the upper shield layer. Any magnetic poles are hardly generated along the interface of the upper shield layer.

Abstract: A spin valve sensor has an antiparallel (AP) pinned layer structure which has ferromagnetic first and second AP pinned layers that are separated by an antiparallel coupling layer. The first and second AP pinned layers are self-pinned antiparallel with respect to one another without the assistance of an antiferromagnetic (AFM) pinning layer. First and second hard bias layers interface first and second side surfaces of the spin valve sensor and the sensor has a central portion that extends between the first and second hard bias layers. First and second lead layers overlay the first and second hard bias layers and overlay first and second end portions of the central portion so that a distance between the first and second lead layers defines a track width that is less than a distance between the first and second hard bias layers.

Abstract: The present invention is directed towards increasing the conductivity of the electrical lead material in the read head portion of a magnetic head, such that thinner electrical leads can be fabricated while the current carrying capacity of the leads is maintained. This increase in electrical lead conductivity is accomplished by fabricating the electrical lead upon an epitaxially matched seed layer, such that the crystalline microstructure of the electrical lead material has fewer grain boundaries, whereby the electrical conductivity of the lead material is increased. In a preferred embodiment, the electrical lead material is comprised of Rh, which has an FCC crystal structure, and the seed layer is comprised of a metal, or metal alloy having a BCC crystal structure with unit cell lattice constant dimensions that satisfy the relationship that abcc is approximately equal to 0.816afcc. In various embodiments, the seed layer is comprised of VMo or VW.

Abstract: In a yoke type reproducing magnetic head, a magnetoresistance effect film can be arranged in the vicinity of a medium facing surface, so that sensitivity is improved. The yoke type reproducing magnetic head comprises: a pair of magnetic yokes which face each other via a magnetic gap, at least one of the pair of magnetic yokes extending from a medium facing surface to a position retracted from the medium facing surface; a magnetoresistance effect film which has a curved portion protruding toward the medium facing surface in the magnetic gap and which is magnetically connected to the magnetic yokes; and an electrode which is electrically connected to the magnetoresistance effect film.

Abstract: Assuming that a distance between an upper shield layer and a lower shield layer in an area, which overlaps only a first electrode layer, but does not overlap a second electrode layer, is G1s, and a distance between the upper shield layer and the lower shield layer at a position in alignment with a center of a multilayered film is G1c, a difference in value between G1s and G1c is set to be not larger than a predetermined value, whereby an effective track (read) width can be reduced.

Abstract: A reproducing head of a thin-film magnetic head incorporates an MR element, a pair of bias field applying layers located to be adjacent to side portions of the MR element, and a pair of electrode layers that are located on the bias field applying layers and overlap the MR element. The electrode layers each have a first layer, a second layer, and a third layer. The first layer is laid over part of the top surface of the MR element via a protection layer, the second layer overlaps the first layer, and the third layer is located on the second layer. The second layer is thinner than the third layer. In the method of manufacturing the reproducing head, after the protection layer is formed on an element-to-be film to make the MR element, a first electrode-to-be film to make the first layers is formed continuously without interposing a step of exposing the protection layer to the air.

Abstract: An electronic device free from variation of conductivity is provided. The electronic device 100 includes electrodes 2 and 3; and a metal conductor thin film 7 electrically connected to the electrodes 2 and 3. The metal conductor thin film 7 includes a metal conductor portion 1 that bridges a gap between the electrodes 2 and 3. The bridge length L of the metal conductor portion 1 is not more than a mean free path &Lgr; of electron in the metal conductor portion 1 at the operation temperature of the electronic device 1. The electronic device 100 is formed by forming the electrodes 2 and 3 on the substrate 8 with a gap having the bridge length L; forming a support 4 that includes at least one selected from the group consisting of a nano-tube and a nano-wire and bridges a gap between the electrodes 2 and 3; and forming the metal conductor portion 1 by depositing the metal conductor thin film 7 on the support 4, and the electrodes 2 and 3.