Abstract: In one illustrative example, a three terminal magnetic sensor (TTM) suitable for use in a magnetic head has a sensor stack structure which includes a base region, a collector region, and an emitter region. A first barrier layer separates the emitter region from the base region, and a second barrier layer separates the collector region from the base region. A plurality of terminals of the TTM include a base lead coupled to the base region, a collector lead coupled to the collector region, and an emitter lead coupled to the emitter region. Preferably, the base region consists of a free layer structure so as to have a relatively small thickness. A pinned layer structure is made part of the emitter region. An in-stack longitudinal biasing layer (LBL) structure is formed in stack with the sensor stack structure and has a magnetic moment that is parallel to a sensing plane of the TTM for magnetically biasing the free layer structure.

Abstract: A lower shield layer and an upper shield layer are formed to have a planar shape, and a detecting element is provided between the lower shield layer and the upper shield layer. End faces of the upper shield layer may extend farther in a depthwise direction from a surface facing a recording medium than end faces of the lower shield layer. A lower conductive electrode may be disposed directly adjacent to a facing inner surface of the lower shield layer. An upper conductive electrode may be disposed adjacent to a portion of the upper shield layer. Therefore, the lower shield layer and the upper conductive electrode may be insulated from each other.

Abstract: In one embodiment, a seed layer, an underlayer, and a magnetic domain control layer are laminated on both sides of a magnetoresistive sheet unit. A lower electrode film is thinly formed on an upper portion of the magnetic domain control film. A portion of the lower electrode film near the magnetoresistive sheet unit does not protrude substantially from an upper surface of the magnetoresistive sheet unit. Should the portion protrude, a step from the upper surface of the magnetoresistive sheet unit is about 14 nm or less. This portion and the upper surface of the magnetoresistive sheet unit are formed into a flat surface. An upper electrode film is formed thickly on an upper portion of the lower electrode film on an outside thereof so as to circumvent the flat surface. A protective layer, an upper gap film, and an upper magnetic shield film are also formed.

Abstract: A lower shield layer has a substantially flat shape, and an upper shield layer has a front portion and a rear portion, where the front portion is disposed closer to the lower shield layer than the rear portion. A lower conductive electrode and an upper conductive electrode are disposed between the lower shield layer and the upper shield layer. The lower conductive electrode is electrically connected to the lower shield layer, and the upper conductive electrode is electrically connected to the upper shield layer. Since the lower and upper conductive electrodes are disposed between the upper and lower shield layers, each of the lower shield layer and the upper shield layer may be formed to have a small area and a simple shape.

Abstract: A lead overlay design of a magnetic sensor is described with sensor and free layer dimensions such that the free layer is stabilized by the large demagnetization field due to the shape anisotropy. In one embodiment the giant magnetoresistive (GMR) effect under the leads is destroyed by removing the antiferromagnetic (AFM) and pinned layers above the free layer. The overlaid lead pads are deposited on the exposed spacer layer at the sides of the mask that defines the active region. In other embodiment a layer of electrically insulating material is deposited over the sensor to encapsulate it and thereby insulate it from contact with the hardbias structures. Various embodiments with self-aligned leads are also described. In a variation of the encapsulation embodiment, the insulating material is also deposited under the lead pads so the electrical current is channeled through the active region of the sensor and sidewall deposited lead pads.

Abstract: A method of making a magnetoresistive sensor includes defining a track width of a magnetoresistive element stack of the sensor. Further, processes of the method enable depositing of hard magnetic bias material on each side of the stack. These processes may permit both milling of excess depositions of the material outside of regions where the hard magnetic bias material is desired via use of a photoresist and making the material have a planar surface via chemical mechanical polishing, which also removes the material on top of the stack. The method includes removing excess material outside of the photoresist, wherein the excess material includes part of the hard bias layer, while a portion of the hard bias layer remains directly above the MR sensor stack.

Abstract: In one illustrative example, a three terminal magnetic sensor (TTM) suitable for use in a magnetic head has a sensor stack structure which includes a base region, a collector region, and an emitter region. A first barrier layer separates the emitter region from the base region, and a second barrier layer separates the collector region from the base region. A plurality of terminals of the TTM include a base lead coupled to the base region, a collector lead coupled to the collector region, and an emitter lead coupled to the emitter region. Preferably, the base region consists of a free layer structure so as to have a relatively small thickness. A pinned layer structure is made part of the emitter region. An in-stack longitudinal biasing layer (LBL) structure is formed in stack with the sensor stack structure and has a magnetic moment that is parallel to a sensing plane of the TTM for magnetically biasing the free layer structure.

Abstract: A method of forming a magnetic tunnel junction memory element and the resulting structure are disclosed. A magnetic tunnel junction memory element comprising a thick nonmagnetic layer between two ferromagnetic layers. The thick nonmagnetic layer has an opening in which a thinner tunnel barrier layer is disposed. The resistance of a magnetic tunnel junction memory element may be controlled by adjusting the surface area and/or thickness of the tunnel barrier layer without regard to the surface area of the ferromagnetic layers.

Abstract: In one illustrative example, a three terminal magnetic sensor (TTM) has a sensor stack structure which includes a base region, a collector region, and an emitter region. A first barrier layer is located between the emitter region and the base region, and a second barrier layer is located between the collector region and the base region. A plurality of terminals of the TTM include a base lead coupled to the base region, a collector lead coupled to the collector region, and an emitter lead coupled to the emitter region. The collector region is or includes a layer of semiconductor material. The base region includes a free layer structure. The TTM further includes a self-pinned layer structure and an in-stack longitudinal biasing layer (LBL) structure formed in stack with the sensor stack structure, with a magnetic moment that is parallel to a sensing plane of the TTM for magnetically biasing the free layer structure.

Abstract: A current perpendicular to plane (CPP) magnetoresistive sensor having a front edge that is recessed from the air bearing surface (ABS). The sensor includes a pinned layer structure a free layer structure and a spacer layer sandwiched between the free layer and the pinned layer. The free layer is an AP coupled structure that includes a first magnetic layer F1 a second magnetic layer F2 and a coupling layer sandwiched between F1 and F2. The first magnetic layer F1 extends to the ABS while the other sensor layers terminate at the recessed front edge. In this way, the F1 layer acts as a flux guide that reacts to a magnetic field from a magnetic medium. The AP coupled structure of the free layer allows each magnetic layer F1 and F2 to be thicker than would be possible in a conventional single layer free layer, which increases the GMR effect of the sensor and increases the effectiveness of the flux guide (F2).

Abstract: Apparatus and method for providing a magnetic head that includes a magnetoresistive read sensor disposed between first and second magnetic shields. The shields are configured to reduce protrusion of the shields from a polished flat air bearing surface of the magnetic head upon increases in temperature. This configuration for the shields therefore at least reduces differences in thermal expansion of the shields relative to other parts of the magnetic head forming the air bearing surface. These shields according to some embodiments include one or more ferromagnetic layers exchange coupled with an antiferromagnetic layer. Further, in a particular embodiment, all the ferromagnetic layers within each of the shields can have a combined thickness per shield of less than 500 angstroms.

Abstract: The present invention aims to provide a magnetic sensor provided with a magnetoresistive effect element capable of stably maintaining a direction of magnetization in a magnetic domain of a free layer. The magnetic sensor includes a magnetoresistive effect element provided with narrow zonal portions 11a . . . 11a including a pinned layer and a free layer. Disposed below both ends of the free layer are bias magnet films 11b . . . 11b composed of a permanent magnet that applies to the free layer a bias magnetic field in a predetermined direction and an initializing coil 31 that is disposed in the vicinity of the free layer and applies to the free layer a magnetic field having the direction same as that of the bias magnetic field by being energized under a predetermined condition.

Abstract: A CPP giant magnetoresistive head includes lower and upper shield layers, and a giant magnetoresistive element disposed between the upper and lower shield layers and including a pinned magnetic layer, a free magnetic layer and a nonmagnetic layer disposed between the pinned magnetic layer and the free magnetic layer. In the CPP giant magnetoresistive head, the pinned magnetic layer extends to the rear of the nonmagnetic layer and the free magnetic layer in the height direction, and the dimension of the pinned magnetic layer in the height direction is larger than that in the track width direction. Also, the pinned magnetic layer comprises a magnetic material having a positive magnetostriction constant or a magnetic material having high coercive force, and the end of the pinned magnetic layer is exposed at a surface facing a recording medium.

Abstract: A method is presented for fabrication of a tape medium read head having a unitary formation of multiple elements for reading multi-track data from a magnetic tape. The method includes providing a continuous substrate layer, and forming a sensor material layer on the continuous substrate layer. Photoresist material is deposited on the sensor material layer, and is patterned to form masks which provide protected areas and exposed areas of the sensor material layer. Exposed areas of the sensor material layer are shaped to form sensors from the protected areas of the sensor material layer. Electrical lead materials are deposited between and adjacent to the sensors, and the masks are removed.

Abstract: A magnetoresistive reader having a sensor, current contacts with low parasitic resistance and a top shield with substantially planar topology is fabricated by first defining a stripe height back edge of the sensor. Next, a reader width of the sensor is defined. The current contacts are deposited to a thickness such that a top surface of the current contacts is substantially level with a top surface of the sensor. The top shield is deposited over the sensor and the current contacts. Defining the stripe height back edge prior to the reader width results in current contacts with low parasitic resistance and inhibits the formation of magnetic domains in the top shield.

Abstract: An apparatus comprises a first current-in-plane sensor, a first magnetic field source for biasing the first current-in-plane sensor in a first direction, a second current-in-plane sensor positioned parallel to the first current-in-plane sensor, a second magnetic field source for biasing the second current-in-plane sensor in a second direction, and first and second electrodes for supplying sense current to the first and second current-in-plane sensors.

Abstract: Embodiments of the present invention provide an accumulation element with high resolving power and high output suitable for magnetic recording and reproducing at high recording density. According to one embodiment, a plurality of spin injection parts and are provided to increase the total amount of spin electrons. The spin accumulation element is composed of a non-magnetic conductor, a first magnetic conductor, a second magnetic conductor, and a third magnetic conductor, each of which are in contact with the non-magnetic conductor through the tunneling junction. An output voltage due to the spin accumulation effect is detected as a potential difference between the non-magnetic conductor and the third magnetic conductor.

Abstract: A CPP thin-film magnetic head includes lower and upper shield layers separated by a predetermined distance and a thin-film magnetic head element disposed therebetween. Current flows in a direction orthogonal to the surface of the thin-film magnetic head element. The CPP thin-film magnetic head further includes an insulating layer positioned at the rear of the thin-film magnetic head element in a height direction and covering the thin-film magnetic head element and the lower shield layer, a first nonmagnetic metal layer provided in a region defined by the insulating layer, and a second nonmagnetic metal layer disposed between the upper shield layer and the first nonmagnetic metal layer, the insulating layer, and the thin-film magnetic head element. The second nonmagnetic metal layer allows current to flow from the upper shield layer to the thin-film magnetic head element through the first nonmagnetic metal layer.

Abstract: A magnetoresistive (MR) read head based on the spin accumulation effect has no electrical terminal and associated insulating layer in the read gap. The spin-accumulation type MR read head has an electrically conductive strip located on an insulating layer on the lower magnetic shield with a first end at the sensing end of the head and a second end at the back end of the head recessed from the sensing end. At the sensing end of the head, the upper magnetic shield is located on the free layer without an insulating layer. A resistance-detection circuit is electrically coupled to the upper shield and the lower shield at the back end of the head. At the back end of the head, an electrical terminal is located on the fixed layer and electrically insulated from the upper shield and a current-supply circuit is electrically coupled to the terminal and the lower shield.

Abstract: A magnetic head is provided for further improving a correlation between the dynamic characteristics and static characteristics. A lower magnetic shield layer, a magneto-resistive layer, and an upper magnetic shield layer are laminated on a base in this order. A lower lead layer and an upper lead layer apply a sense current to the magneto-resistive layer in a direction substantially perpendicular to the film plane thereof through the magnetic shield layers. The lower magnetic shield layer and upper magnetic shield layer have their shapes and sizes which substantially exactly overlap each other, when viewed in a laminating direction. The lower lead layer is electrically connected to the lower magnetic shield layer. At least a portion of the lower lead layer closer to the lower magnetic shield layer is made of a non-magnetic conductive material. The upper lead layer is electrically connected to the upper magnetic shield layer.

Abstract: A magnetoresistive element has a first magnetic layer and a second magnetic layer separate from each other, the first magnetic layer and the second magnetic layer each having a magnetization whose direction is substantially pinned, and a non-magnetic conductive layer formed in contact with the first magnetic layer and the second magnetic layer and electrically connecting the first and second magnetic layers, the non-magnetic conductive layer forming a path of spin-polarized electrons from one of the magnetic layer to the other magnetic layer, the non-magnetic conductive layer comprising a portion located between the first magnetic layer and the second magnetic layer, the portion being a sensing area.

Abstract: A magnetic head including an electrical lead layer that is comprised of a material having an ordered-phase crystalline structure. In a preferred embodiment, the ordered-phase crystalline structure of the electrical lead is epitaxially matched to the crystalline structure of the hard bias layer upon which it is formed, and there is no need for a seed layer for the electrical leads. Electrical leads comprised of the materials used in the invention having an ordered-phase crystalline structure, particularly a B2, L10, L11, and L12 structure, will have significantly reduced resistivity over the prior art electrical leads that are typically composed of rhodium or tantalum. As a result, thinner electrical leads can be fabricated which carry the same, or even greater, current than the prior art rhodium or tantalum leads. The preferred leads are comprised of NiAl, FeCo, or CuZn having a B2 crystalline structure, and alternative embodiments are comprised of CuAu, Cu3Au, CuPt, and Cu3Pt.

Abstract: A magnetic head provided with magnetoresistance effect element, the magnetic head comprises first shielding layer superimposed on one surface of the magnetoresistance effect element and whose area is larger than that of this one surface, a first lead layer formed ranging from a portion where the first shielding layer is superimposed on the magnetoresistance effect element to another portion on the first shielding layer and which applies the sense current to the magnetoresistance effect element, a second shielding layer superimposed on another surface of the magnetoresistance effect element opposite to the one surface and whose area is larger than that of the other surface, and a second lead layer formed ranging from a portion where the second shielding layer is superimposed on the magnetoresistance effect element to another portion on the second shielding layer and which applies the sense current to the magnetoresistance effect element.

Abstract: A method of forming a perpendicular magnetic recording write head having a trailing shield (TS) with a precisely defined throat height (TH) on an air-bearing slider includes depositing an electrical lapping guide (ELG) layer on the substrate adjacent to and spaced from the write pole (WP) layer. A nonmagnetic TS pad layer is deposited on both the gap layer and the ELG layer, with the TS pad layer patterned to have a front edge extending across the both the ELG layer and the gap layer and recessed from the line where the substrate will be later cut to form the slider. An ELG protection layer is patterned on the ELG layer, the TS pad layer material is removed from the ELG layer in the region recessed from the TS pad layer front edge, and the ELG layer is removed in regions not covered by the ELG protection layer.

Abstract: A current perpendicular to plane (CPP) sensor having a sensor stack lead layer that is resistant to corrosion. The sensor includes a sensor stack having a capping layer at its top. A lead layer constructed of a non-corroding material such as Ru, Rh, Au or some similar material is formed over the capping layer. A magnetic shield material such a NiFe can then be deposited over the lead layer. The non-corroding lead material prevents the cap layer from corroding, preventing corrosion from causing parasitic resistance in the area in and around the lead and capping layers, thereby increasing sensor performance and reliability.

Abstract: An area of an element can be made small and fluctuation in area can be reduced. A magneto-resistance effect element is provided with a first electrode with an end face; a magneto-resistance effect film which is formed such that a surface thereof comes in contact with the end face of the first electrode; and a second electrode which is formed on another surface of the magneto-resistance effect element opposed from the surface coming in contact with the surface of the first electrode. The magneto-resistance effect film includes a magnetization pinned layer whose magnetization direction is pinned, a magnetization free layer whose magnetization direction is changeable, and a first non-magnetic layer which is provided between the magnetization pinned layer and the magnetization free layer.

Abstract: A method for fabricating a read head sensor for a magnetic disk drive is presented. The method includes providing a layered wafer stack to be shaped, where the layered wafer stack includes a free layer, a barrier layer and a pinned layer. A single- or multi-layered photoresist mask is formed upon the layered wafer stack to be shaped. A material removal source is provided and used to perform a partial depth material removal within a partial depth material removal range which extends from the free layer to within the pinned layer to a partial depth material removal endpoint. In various embodiments, this depth endpoint lies at or within the barrier layer or within but not through the pinned layer.

Abstract: A reproducing head including a read element, first and second electrodes provided at the opposite ends of the read element, a ground electrode provided between the first and second electrodes, a first constant current circuit for passing a first constant current between the first electrode and the ground electrode, and a second constant current circuit for passing a second constant current between the second electrode and the ground electrode. The reproducing head further includes a computing unit connected to the first and second electrodes for synthesizing an output from the first electrode and an output from the second electrode, and a storing unit having a table showing the relation between a synthetic value computed by the computing unit and the outputs from the first and second electrodes.

Abstract: A magnetoresistive device comprises: a first shield layer and a second shield layer disposed with a space from each other in the direction of thickness; an MR element disposed between the first and second shield layers; and a layered structure disposed between the first and second shield layers on both sides of the MR element. The layered structure includes an insulating layer and bias field applying layers. The second shield layer has a surface facing toward the first shield layer. This surface includes a first portion touching the top surface of the MR element and second portions located on both sides of the MR element, the sides being opposed to each other in the direction of track width. A difference in level is created between the first and second portions such that the second portions are closer to the first shield layer than the first portion.

Abstract: A magnetoresistive effective film responds commensurate with an external magnetic field. Magnetic domain-controlling films apply a perpendicular biasing magnetic field to the magnetoresistive effective film. The forefronts of first electrode films constituting a pair of electrode films are overlaid on the magnetoresistive effective film, and the forefront surfaces of the first electrode films are risen at an inner angle of ?1. Second electrode films are overlaid on the first electrode films, and the forefront surfaces of the second electrode films are risen at an inner angle of ?2 smaller than the inner angle ?1.

Abstract: A magnetoresistance device is provided for improving thermal stability of a magnetoresistance element by preventing inter-diffusion between a conductor (such as a via and an interconnection) for connecting the magnetoresistance element to another element and layers constituting the magnetoresistance element. A magnetoresistance device is composed of a magnetoresistance element, a non-magnetic conductor providing electrical connection between said magnetoresistance element to another element, and a diffusion barrier structure disposed between the conductor and said magnetoresistance element, the magnetoresistance element including a free ferromagnetic layer having reversible spontaneous magnetization, a fixed ferromagnetic layer having fixed spontaneous magnetization, and a tunnel dielectric layer disposed between said free and fixed ferroelectric layer.

Abstract: A current in plane giant magnetoresistive (GMR) sensor having a hard bias layer that extends along the back edge (strip height) of the sensor rather than from the sides of the sensor. The hard bias layer preferably extends beyond the track width of the sensor. Electrically conductive leads, which may be a highly conductive material such as Cu, Rh or Au, or may be an electrically conductive magnetic material extend from the sides of the sensor stack. The bias layer is separated from the sensor stack and from the leads by thin layer of electrically conductive material, thereby preventing current shunting through the hard bias layer.

Abstract: A composite type thin-film magnetic head is provided, which comprises: a write head element; a pair of terminal pads for the write head element; a pair of lead conductors for the write head element, electrically connecting the write head element to the pair of terminal pads for the write head element; a read head element; a pair of terminal pads for the read head element; and a pair of lead conductors for the read head element, electrically connecting the read head element to the pair of terminal pads for the read head element. The pair of lead conductors for the write head element and the pair of lead conductors for the read head element are formed into patterns that have no overlapped portions with each other through only an insulating layer.

Abstract: Embodiments of the present invention pertain to forming a head with reduced pole tip recession. According to one embodiment, a pole tip element is formed from a platinum containing material. During diamond like carbon (DLC) processing, hydrogen and hydrogen containing compounds are removed from a vacuum plasma processing environment that contains the head so that an amount of material that is removed from the pole tip element and other non-platinum containing elements associated with the head are approximately the same.

Abstract: A magnetic head having improved self-pinning. The head includes a sensor having an antiparallel (AP) pinned layer structure, where the AP pinned layer structure includes at least two pinned layers having magnetic moments that are self-pinned antiparallel to each other, the pinned layers being separated by an AP coupling layer. A pair of compression layers are positioned towards opposite track edges of the sensor. The compression layers provide compressive stress to the sensor.

Abstract: Current-perpendicular-to-plane (CPP) read sensors having constrained current paths made of lithographically-defined conductive vias with surrounding oxidized metal sublayers, and methods of making the same, are disclosed. In one illustrative example, at least part of a sensor stack structure which includes an electrically conductive spacer layer is formed. A metal (e.g. Ta) sublayer is then deposited over and adjacent the spacer layer, followed by one of an oxidation process, a nitridation process, and an oxynitridation process, to produce an insulator (e.g. TaOx) from the metal sublayer. The metal sublayer deposition and oxidation/nitridation/oxynitridation processes are repeated as necessary to form the insulator with a suitable thickness. Next, a resist structure which exposes one or more portions of the insulator is formed over the insulator. With the resist structure in place, exposed insulator materials are removed by etching to form one or more apertures through the insulator down to the spacer layer.

Abstract: A current-perpendicular-to-the-plane (CPP) structure magnetoresistive element includes an electrode layer contacting a magnetoresistive film. A low resistance region is defined to extend rearward along the boundary of the magnetoresistive film from the front end exposed at the medium-opposed surface of the head slider. A high resistance region is defined to extend rearward along the boundary from the rear end of the low resistance region. The high resistance region has a resistivity higher than that of the low resistance region. The high resistance region serves to restrict the path of a sensing current nearest to the medium-opposed surface. The sensing current is allowed to concentrate at a position closest to the medium-opposed surface in the magnetoresistive film. Magnetization sufficiently rotates in the magnetoresistive film near the medium-opposed surface. The CPP structure magnetoresistive element maintains a sufficient variation in the resistance. A sufficient sensitivity can be maintained.

Abstract: A magnetoresistance effect element a stacked film including a magnetization fixed layer in which the direction of magnetization is substantially fixed to one direction, and a magnetization free layer in which the direction of magnetization varies in response to an external magnetic field, an electrode connected to a part of a principal plane of the stacked film, the magnetoresistance effect element having a resistance varying in response to a relative angle between the direction of magnetization in the magnetization fixed layer and the direction of magnetization in the magnetization free layer, a sense current detecting the variation of the resistance being applied to the film planes of the magnetization fixed layer and the magnetization free layer via the electrode in a direction substantially perpendicular to the magnetization fixed layer and the magnetization free layer.

Abstract: Provided is a magnetic head having a magnetoresistive device which has high output and is best suited to high-recording-density magnetic recording/reading. A magnetic sensor having large output can be realized by providing a magnetic sensor which comprises: a first ferromagnetic film; a conductor which intersects the first ferromagnetic film via a first intermediate layer; a current circuit structure which is connected so as to cause a current to flow from the first ferromagnetic layer to the conductor; a second ferromagnetic film which is formed on the conductor in an intersecting manner via a second intermediate layer and which generates a signal of voltage changing according to a change in an external magnetic field; a voltage change amplifier film which contains materials whose resistance changes nonlinearly due to voltage; and an electrode which is connected to the voltage change amplifier film.

Abstract: A magnetoresistive effect element includes: a magnetoresistive effect film including a magnetization free layer, a magnetization fixed layer, and an intermediate layer placed between them; a magnetic coupling layer; a ferromagnetic layer; an antiferromagnetic layer; a bias mechanism portion applying a bias magnetic field to the magnetization free layer in a direction nearly parallel to a film surface of the magentoresistive effect film and nearly perpendicular to a magnetization direction of the magnetization fixed layer; and a pair of electrodes to pass a current in a direction going from the magnetization fixed layer to the magnetization free layer, and its bias point is more than 50%.

Abstract: A magnetic reading head comprising: a bottom shield; a top shield; an AMR device with MR and SAL separated by a thin insulating layer; a first insulting gap layer between said bottom shield and said AMR; a second insulating gap layer between said AMR and said top shield; a conductive layer contact at one end region of said MR and SAL. Furthermore, magnetic reading heads with GMR device free of electric-pop noise also are disclosed.

Abstract: A magnetic head includes a first electrode layer, a first ferromagnetic electrode pair that is electrically connected to the first electrode layer, and a second ferromagnetic electrode pair that intersects with a current which flows between the first ferromagnetic electrode pairs and is electrically connected with the first electrode layer. The current is allowed to flow between the first ferromagnetic electrode pair through the first electrode layer to accumulate spin electrons in the first electrode layer. A direction of magnetization of the fourth ferromagnetic electrode layer changes upon application of an external magnetic field. The second ferromagnetic electrode pair is so arranged as to intersect with the current that flows between the first ferromagnetic electrode pair, to increase a rate of change in the output signal of the in-plane spin accumulation effect.

Abstract: A magnetoresistive head includes a first magnetic shield, a first electrode terminal arranged on the first magnetic shield at an entry side of a magnetic field from a carrier, a third electrode terminal that is spaced from the first electrode terminal, and arranged on the first magnetic shield at a side opposite to the entry side of the magnetic field from the carrier, a magnetoresistive coating arranged on the first and third electrode terminals, a second electrode terminal that is arranged on the magnetoresistive coating, and opposed to the first electrode terminal, a second magnetic shield arranged on the second electrode terminal, and a sense current source connected to the first and second electrode terminals, which applies sense current in a direction perpendicular to a coating surface of the magnetoresistive coating.

Abstract: There is provided a magnetoresistance effect element capable of precisely defining the active region in a CPP type MR element and of effectively suppressing and eliminating the influence of a magnetic field due to current from an electrode, and a magnetic head and magnetic reproducing system using the same. The active region of the MR element is defined by the area of a portion through which a sense current flows. Moreover, the shape of the cross section of a pillar electrode or pillar non-magnetic material for defining the active region of the element is designed to extend along the flow of a magnetic flux so as to efficiently read only a signal from a track directly below the active region. When the magnetic field due to current from the pillar electrode can not be ignored, the magnetic flux from a recording medium asymmetrically enters yokes and the magnetization free layer of the MR element to some extent.

Abstract: A base protective layer, a bottom shielding layer, and a bottom insulating layer 4 are formed in turn on a base made of AlTiC. Then, a magnetoresistive effective film is formed on the bottom insulating layer, and a magnetic biasing layer is formed so as to be contacted with both side surfaces of the magnetoresistive effective film which are parallel to the ABS thereof. Then, electrode layers are formed so as to be contacted with the rear surface of the magnetoresistive effective film opposite to the ABS thereof.

Abstract: The GMR read head includes a GMR read sensor and a longitudinal bias (LB) stack in a read region, and the GMR read sensor, the LB stack and a first conductor layer in two overlay regions. In its fabrication process, the GMR read sensor, the LB stack and the first conductor layer are sequentially deposited on a bottom gap layer. A monolayer photoresist is deposited, exposed and developed in order to open a read trench region for the definition of a read width, and RIE is then applied to remove the first conductor layer in the read trench region. After liftoff of the monolayer photoresist, bilayer photoresists are deposited, exposed and developed in order to mask the read and overlay regions, and a second conductor layer is deposited in two unmasked side regions. As a result, side reading is eliminated and a read width is sharply defined by RIE.

Abstract: A magnetoresistive sensor including a lower electrode layer, a discontinuous structure film provided on the lower electrode layer, the discontinuous structure film being composed of an insulator matrix and a plurality of metal islands dispersively arranged in the insulator matrix, a magnetoresistive film provided on the discontinuous structure film, and an upper electrode layer provided on the magnetoresistive film. The discontinuous structure film is partially etched at a central region thereof to thereby make a conduction between the upper electrode layer and the lower electrode layer at the central region through the magnetoresistive film and the metal islands.

Abstract: In a method of forming a magnetoresistive sensor, first and second magnetic leads are formed. Next, a junction of magnetic and electrically conductive material is formed between the first and second magnetic leads. Finally, the magnetic and electrical conductivity of an outer shell portion of the junction is reduced to form a constricted junction comprising a magnetic and electrically conductive junction core that is at least partially surrounded by the outer shell portion. Another aspect of the present invention is directed to the magnetoresistive sensor that is formed using the method.

Abstract: An electronic device such as a sensor or a NEMS. The electronic device comprises at least one substrate; a plurality of electrodes disposed on the substrate; and at least one nano-wire growing from an edge of a first electrode to an edge of a second electrode. A method for making an electrode structure by providing a substrate; forming a plurality of electrodes on the substrate; growing at least one nano-wire from the edge of a first electrode; and connecting the at least one nano-wire to the edge of a second electrode is also disclosed.

Abstract: A reproducing head of a thin-film magnetic head incorporates an MR element, a pair of bias field applying layers located to be adjacent to the side portions of the MR element, and a pair of electrode layers that are located on the bias field applying layers and overlap the MR element. The electrode layers each have a first layer that is laid over part of the top surface of the MR element via a protection layer, and a second layer that overlaps the first layer. In the method of manufacturing the reproducing head, after forming the protection layer on an element-to-be film to make the MR element, a first electrode-to-be film to make the first layers is formed continuously without interposing a step of exposing the protection layer to the air.