Abstract: A stress sensor includes a stress detection layer including a laminated body including a first magnetic layer, a first non-magnetic layer, and a second magnetic layer that are laminated, wherein the first magnetic layer and the second magnetic layer have mutually different magnetoelastic coupling constants, such that a stress is detected by an electrical resistance dependent on a relative angle of magnetization between the first magnetic layer and the second magnetic layer varying depending on the stress externally applied.

Abstract: A magnetic-field-applying bias film exhibiting resistance to a high magnetic field has an exchange-coupled film including a permanent magnet layer and an antiferromagnetic layer stacked on the permanent magnet layer. The antiferromagnetic layer includes an X(Cr—Mn) layer containing Cr, Mn, and one or two or more elements selected from the group consisting of platinum-group elements and Ni. The X(Cr—Mn) layer has a first region relatively near to the permanent magnet layer and a second region relatively distant from the permanent magnet layer. Mn content in the first region is higher than Mn content in the second region.

Abstract: A magnetic-field-applying bias film having strong-magnetic-field resistance includes an exchange coupling film. The exchange coupling film includes a ferromagnetic layer and an antiferromagnetic layer stacked on the ferromagnetic layer. The antiferromagnetic layer includes an X(Cr—Mn) layer containing Mn, Cr, and one or more elements X selected from the group consisting of platinum-group elements and Ni. The X(Cr—Mn) layer has a first region relatively close to the ferromagnetic layer and a second region relatively far from the ferromagnetic layer. The Mn content in the first region is higher than the Mn content in the second region.

Abstract: A method includes depositing a copper layer over a first substrate, annealing the copper layer, depositing a hexagonal boron nitride (hBN) film on the copper layer, and removing the hBN film from the copper layer. The hBN film may be transferred to a second substrate.

Abstract: A perpendicular magnetic tunnel junction is disclosed wherein first and second interfaces of a free layer (FL) with a first metal oxide (Hk enhancing layer) and second metal oxide (tunnel barrier), respectively, produce perpendicular magnetic anisotropy (PMA) to provide thermal stability to 400° C. Insertion of an oxidation control layer (OCL) such as Mg and a magnetic moment tuning layer (MMTL) like Mo or W enables FL thickness to be reduced below 10 Angstroms while providing sufficient PMA for a switching voltage substantially less than 500 mV at a 10 ns pulse width and 1 ppm defect rate. Magnetoresistive ratio is ?1, and resistance×area (RA) product is below 5 ohm-?m2. Embodiments are provided where MMTL and OCL materials interface with each other, or do not contact each other. Each of the MMTL and OCL materials may be deposited separately, or at least one is co-deposited with the FL.

Abstract: A magnetoresistive device comprises a fixed magnetic region positioned on or over a first electrically conductive region, an intermediate layer positioned on or over the fixed magnetic region, a free magnetic region positioned on or over the intermediate layer, and a metal insertion substance positioned in contact with the free magnetic region, wherein the metal insertion substance includes one or more transition metal elements.

Abstract: A magnetic sensor according to the invention comprises at least an element portion that is elongate and that has a magnetoresistive effect; and a soft magnetic body that sandwiches the element portion on both sides with regard to a short axis direction of the element portion. A width of at least one of both end portions of the element portion with regard to a long axis direction of the element portion gradually decreases as a distance in the long axis direction from a central portion of the element portion with regard to the long axis direction increases.

Abstract: A magnetic field sensing device includes at least one vortex magnetoresistor and at least one magnetization setting element. The vortex magnetoresistor includes a pinning layer, a pinned layer, a spacer layer, and a round free layer. The pinned layer is disposed on the pinning layer, and the spacer layer is disposed on the pinned layer. The round free layer is disposed on the spacer layer, and has a magnetization direction distribution with a vortex shape. The magnetization setting element is alternately applied and not applied an electric current to. When the magnetization setting element is not applied the electric current to, the magnetization direction distribution with the vortex shape of the round free layer is varied with an external magnetic field. When the magnetization setting element is applied the electric current to, a magnetic field generated by the magnetization setting element makes the round free layer achieve magnetic saturation.

Abstract: A junction shield (JS) structure is disclosed for providing longitudinal bias to a free layer (FL) having a width (FLW) and magnetization in a cross-track direction between sidewalls in a sensor. The sensor is formed between bottom and top shields and has sidewalls extending from a front side at an air bearing surface (ABS) to a backside that is a stripe height (SH) from the ABS. The JS structure has a single layer (JS1) adjacent to each sensor sidewall and with a magnetization parallel to that of the FL, and a tapered top surface such that JS1 has decreasing thickness with increasing height from the ABS. As aspect ratio or AR (SH/FLW) increases above 1, longitudinal bias increases proportionally to slow an increase in asymmetry as AR increases, and without introducing a loss in amplitude for a reader with low AR.

Abstract: A junction shield (JS) structure and method of forming the same are disclosed for providing longitudinal bias to a free layer (FL) having a width (FLW) and magnetization in a cross-track direction between sidewalls in a sensor. The sensor is formed between bottom and top shields and has sidewalls extending from a front side at an air bearing surface (ABS) to a backside at a stripe height (SH) from the ABS. The JS structure has a lower layer (JS1) with magnetization parallel to that of the FL, and a tapered top surface such that JS1 has decreasing thickness with increasing height from the ABS. As aspect ratio or AR (SH/FLW) increases above 1, longitudinal bias increases proportionally to slow an increase in asymmetry as AR increases, and without decreasing amplitude for a reader with low AR. The JS1 layer may be antiferromagnetically coupled to an upper JS layer for stabilization.

Abstract: According to one embodiment, a sensor includes a deformable film portion, and a first sensing element provided at the film portion. The first sensing element includes a first magnetic layer, a second magnetic layer, and a first intermediate layer provided between the first and second magnetic layers. The first intermediate layer is nonmagnetic. The first magnetic layer includes a first film including Fe and Co, a second film including Fe and Co, a third film, and a fourth film. The third film includes at least one selected from the group consisting of Cu, Au, Ru, Ag, Pt, Pd, Ir, Rh, Re, and Os and is provided between the first and second films. The fourth film includes at least one selected from the group consisting of Mg, Ca, Sc, Ti, Sr, Y, Zr, Nb, Mo, Ba, La, Hf, Ta, and W and is provided between the third and second films.

Abstract: According to one embodiment, a magnetic memory device includes a first magnetic region, a first counter magnetic region, and a first nonmagnetic region provided between the first magnetic region and the first counter magnetic region. The first magnetic region includes a first magnetic film, a second magnetic film, and an intermediate film. The first magnetic film is provided between the second magnetic film and the first nonmagnetic region. The intermediate film includes Ru and is provided between the first magnetic film and the second magnetic film. A distance along a first direction between the first magnetic film and the second magnetic film is not less than 1.8 nm and not more than 2.2 nm. The first direction is from the first counter magnetic region toward the first magnetic region.

Abstract: A spin torque magnetic RAM according to the present invention includes at least one row selection line positioned on a silicon substrate to induce a spin orbit interaction therein; at least one first magnetic pattern positioned on the row selection line; a second magnetic pattern positioned on the first magnetic pattern; a tunnel barrier positioned on the second magnetic pattern; and a third magnetic pattern positioned on the tunnel barrier, wherein the first magnetic pattern is made of a cobalt film, the first magnetic pattern and the second magnetic pattern have a total thickness of 5 nm to form a free layer, and the third magnetic pattern is formed with a pinned layer in which a magnetization direction is fixed.

Abstract: A magnetoresistive effect element includes a magnetization fixed layer, a magnetization free layer, and a non-magnetic spacer layer that is stacked between the magnetization fixed layer and the magnetization free layer. The magnetization fixed layer includes a first fixed layer and a second fixed layer that are formed of a ferromagnetic material, and a magnetic coupling layer that is stacked between the first fixed layer and the second fixed layer. The first fixed layer and the second fixed layer are magnetically coupled to each other by exchange coupling via the magnetic coupling layer such that magnetization directions of the first fixed layer and the second fixed layer are antiparallel to each other. The magnetic coupling layer is a non-magnetic layer that includes Ir and at least one of the following elements: Cr, Mn, Fe, Co and Ni.

Abstract: A magnetic sensor device includes a first magnetic sensor, a second magnetic sensor, and a soft magnetic structure. The first magnetic sensor generates a detection value corresponding to a component in a direction parallel to an X direction of an external magnetic field. The second magnetic sensor generates a detection value corresponding to a component in a direction parallel to a Y direction of the external magnetic field. In the presence of a residual magnetization in the X direction in the soft magnetic structure, a magnetic field that is based on the residual magnetization and contains a component in the ?X direction is applied to the first magnetic sensor. In the presence of a residual magnetization in the Y direction in the soft magnetic structure, a magnetic field that is based on the residual magnetization and contains a component in the ?Y direction is applied to the second magnetic sensor.

Abstract: A bulk acoustic wave resonator includes a substrate, a first electrode and a second electrode formed on the substrate, and a piezoelectric layer provided between the first electrode and the second electrode. Either one or both of the first electrode and the second electrode include a molybdenum-tungsten alloy having a weight ratio of molybdenum to tungsten in a range of 3:1 to 1:3.

Abstract: A reader includes a free layer and a side shield that biases the free layer. The side shield includes a main bias layer having a first magnetic moment value and a first magnetization direction. The side shield also includes a compensation bias layer having a second magnetic moment value that is less than the first magnetic moment value and a second magnetization direction that is opposite to the first magnetization direction.

Abstract: A junction shield (JS) structure is disclosed for providing longitudinal bias to a free layer (FL) having a width (FLW) and magnetization in a cross-track direction between sidewalls in a sensor. The sensor is formed between bottom and top shields and has sidewalls extending from a front side at an air bearing surface (ABS) to a backside that is a stripe height (SH) from the ABS. The JS structure has a lower layer (JS1) with a magnetization parallel to that of the FL, and a tapered top surface such that JS1 has decreasing thickness with increasing height from the ABS. As aspect ratio or AR (SH/FLW) increases above 1, longitudinal bias increases proportionally to slow an increase in asymmetry as AR increases, and without introducing a loss in amplitude for a reader with low AR. The JS1 layer may be antiferromagnetically coupled to an upper JS layer for stabilization.

Abstract: A magnetic recording medium includes: a substrate; an underlayer; a magnetic layer including an alloy having an L10 type crystal structure; and a protective layer, wherein the substrate, the underlayer, the magnetic layer, and the protective layer are stacked in the recited order. A pinning layer is further included between the magnetic layer and the protective layer, and the pinning layer includes a magnetic material including Co and includes at least one metal selected from the group consisting of Cu, Ag, Au, and Al.

Abstract: A magnetoresistive device includes an MR element and a bias magnetic field generation unit. The MR element includes a free layer shaped to be long in one direction. The bias magnetic field generation unit includes a ferromagnetic layer for generating a bias magnetic field. The ferromagnetic layer includes two main portions, a first side portion, and a second side portion arranged to surround the perimeter of the free layer. In any cross section perpendicular to the longitudinal direction of the free layer, a shortest distance between the first side portion and the free layer and a shortest distance between the second side portion and the free layer are 35 nm or less.

Abstract: Provided is a spin-orbit-torque magnetization rotational element that suppresses re-adhesion of impurities during preparation and allows a write current to easily flow. The spin-orbit-torque magnetization rotational element includes a spin-orbit torque wiring that extends in a first direction, and a first ferromagnetic layer that is located on a side of one surface of the spin-orbit torque wiring. A side surface of the spin-orbit torque wiring and a side surface of the first ferromagnetic layer form a continuous inclined surface in any side surface.

Abstract: A method of forming a magnetic head includes forming a read sensor stripe, depositing an electronic lapping guide (ELG) layer over the substrate in an ELG region, forming a backside edge of a read sensor by patterning the read sensor stripe in a first patterning step, forming a backside insulator layer and a rear bias magnetic material portion over the backside edge of the read sensor, forming a backside edge of an ELG by patterning the ELG layer in the ELG region in a second patterning step, simultaneously forming a front side edge of the read sensor and a front side edge of the ELG, and lapping the read sensor and the ELG to provide an air bearing surface of a read sensor. The physical stripe height offset can be determined for each flash field by correlating device conductance and ELG conductance.

Abstract: A perpendicularly magnetized magnetic tunnel junction (p-MTJ) is disclosed wherein a free layer (FL) has a first interface with a MgO tunnel barrier, a second interface with a Mo or W Hk enhancing layer, and is comprised of FexCoyBz wherein x is 66-80, y is 5-9, z is 15-28, and (x+y+z)=100 to simultaneously provide a magnetoresistive ratio >100%, resistance x area product <5 ohm/?m2, switching voltage <0.15V (direct current), and sufficient Hk to ensure thermal stability to 400° C. annealing. The FL may further comprise one or more M elements such as O or N to give (FexCoyBz)wM100-w where w is >90 atomic %. Alternatively, the FL is a trilayer with a FeB layer contacting MgO to induce Hk at the first interface, a middle FeCoB layer for enhanced magnetoresistive ratio, and a Fe or FeB layer adjoining the Hk enhancing layer to increase thermal stability.

Abstract: A recording head that includes a reader having a front end at a bearing surface of the recording head and a rear end behind the bearing surface. The reader has a non-rectangular shape with a front-end width that is less than an average width of the reader. A first bias element is positioned proximate to a first side of the reader, and a second bias element is positioned proximate to a second side of the reader. Each of the first and second bias elements has a bias level that is a function of a ratio of the front-end width to the average width of the reader.

Abstract: In one general embodiment, a method includes performing a reducing operation for reducing a native oxide along a surface of a CoFe layer of a magnetic transducer, after performing the reducing operation, performing an oxidation operation for oxidizing the surface of the CoFe layer, and after performing the oxidation operation, forming a layer of at least partially crystalline alumina on the oxidized surface of the CoFe layer.

Abstract: A hard magnet stabilization scheme is disclosed for a top shield and junction shields for double or triple dimension magnetic reader structures. In one design, the hard magnet (HM) adjoins a top or bottom surface of all or part of a shield domain such that the HM is recessed from the air bearing surface to satisfy reader-to-reader spacing requirements and stabilizes a closed loop magnetization in the top shield. The HM may have a height and width greater than that of the top shield. The top shield may have a ring shape with a HM formed above, below, or within the ring shape, and wherein the HM stabilizes a vortex magnetization. HM magnetization is set or reset from room temperature to 100° C. to maintain a desired magnetization direction in the top shield, junction shield, and free layer in the sensor.

Abstract: A thin film magnet includes a substrate, an oxidation-inhibiting layer in an amorphous state disposed on an upper surface of the substrate, a first magnetic layer disposed on the oxidation-inhibiting layer, an intermediate layer disposed on the first magnetic layer, a second magnetic layer disposed on the intermediate layer, and a second oxidation-inhibiting layer in an amorphous state disposed above the second magnetic layer. The intermediate layer contains metal particles. The metal particles are diffused in the first magnetic layer and the second magnetic layer. The concentration of the metal particles in a part of the first magnetic layer decreases as the distance from the intermediate layer to the part of the first magnetic layer increases. The concentration of the metal particles in a part of the second magnetic layer decreases as the distance from the intermediate layer to the part of the second magnetic layer increases.

Abstract: A spin transfer torque (STT) device has a free ferromagnetic layer that includes a Heusler alloy layer and a template layer beneath and in contact with the Heusler alloy layer. The template layer may be a ferromagnetic alloy comprising one or more of Co, Ni and Fe and the element X, where X is selected from one or, more of Ta, B, Hf, Zr, W, Nb and Mo. A CoFe nanolayer may be formed below and in contact with the template layer. The STT device may be a spin-torque oscillator (STO), like a STO incorporated into the write head of a magnetic recording disk drive. The STT device may also be a STT in-plane or perpendicular magnetic tunnel junction (MTJ) cell for magnetic random access memory (MRAM). The template layer reduces the critical current density of the STT device.

Abstract: A method of forming a read head. The method includes forming first and second read sensors that are substantially trapezoidal in shape. A first read measurement is performed on a storage medium using the first read sensor. A second read measurement is performed on the storage medium using the second read sensor. Based on a comparison of the first and second read measurements to a predetermined quantity, either the first read sensor or the second read sensor is selected to be operational in a data storage device.

Abstract: A nonmagnetic spacer layer in a magnetoresistive effect element includes a nonmagnetic metal layer that is formed of Ag and at least one of a first insertion layer that is disposed on a bottom surface of the nonmagnetic metal layer and a second insertion layer that is disposed on a top surface of the nonmagnetic metal layer. The first insertion layer and the second insertion layer include an Fe alloy that is expressed by Fe?X1-?. Here, X denotes one or more elements selected from a group consisting of O, Al, Si, Ga, Mo, Ag, and Au, and ? satisfies 0<?<1.

Abstract: Integrated circuits and methods for fabricating integrated circuits are provided. In one example, an integrated circuit includes a magnetic tunnel junction. The magnetic tunnel junction includes a fixed layer structure, a free layer structure, and a barrier layer disposed between the fixed layer structure and the free layer structure. The fixed layer structure includes a first magnetic layer and a second magnetic layer that is disposed between the first magnetic layer and the barrier layer. The first magnetic layer is configured to produce a first magnetic moment that substantially correlates to a second magnetic moment of the second magnetic layer as a function of temperature.

Abstract: A magnetoresistance element has a pinning arrangement with two antiferromagnetic pinning layers, two pinned layers, and a free layer. A spacer layer between one of the two antiferromagnetic pinning layers and the free layer has a material selected to allow a controllable partial pinning by the one of the two antiferromagnetic pinning layers.

Abstract: A junction shield (JS) structure is disclosed for providing longitudinal bias to a free layer (FL) having a width (FLW) and magnetization in a cross-track direction between sidewalls in a sensor. The sensor is formed between bottom and top shields and has sidewalls extending from a front side at an air bearing surface (ABS) to a backside that is a stripe height (SH) from the ABS. The JS structure has a lower layer (JS1) with a magnetization parallel to that of the FL, and a tapered top surface such that JS1 has decreasing thickness with increasing height from the ABS. As aspect ratio or AR (SH/FLW) increases above 1, longitudinal bias increases proportionally to slow an increase in asymmetry as AR increases, and without introducing a loss in amplitude for a reader with low AR. The JS1 layer may be antiferromagnetically coupled to an upper JS layer for stabilization.

Abstract: A ferromagnetic layer is capped with a metallic oxide (or nitride) layer that provides a perpendicular-to-plane magnetic anisotropy to the layer. The surface of the ferromagnetic layer is treated with a plasma to prevent diffusion of oxygen (or nitrogen) into the layer interior. An exemplary metallic oxide layer is formed as a layer of metallic Mg that is plasma treated to reduce its grain size and enhance the diffusivity of oxygen into its interior. Then the plasma treated Mg layer is naturally oxidized and, optionally, is again plasma treated to reduce its thickness and remove the oxygen rich upper surface.

Abstract: A magnetic element is provided. The magnetic element includes a free magnetization layer having a surface area that is approximately 1,600 nm2 or less, the free magnetization layer including a magnetization state that is configured to be changed; an insulation layer coupled to the free magnetization layer, the insulation layer including a non-magnetic material; and a magnetization fixing layer coupled to the insulation layer opposite the free magnetization layer, the magnetization fixing layer including a fixed magnetization so as to be capable of serving as a reference of the free magnetization layer.

Abstract: The present invention provides a magnetoresistive effect element which performs writing by a novel method. In a state in which a current does not flow in a magnetization free layer MFR, the magnetization free layer MFR has a magnetic wall MW1 on the side of a magnetization fixed layer MFX1. A magnetic wall MW2 is moved to the magnetic wall MW1 side by causing current to flow from the formed side of the magnetic wall MW1. Thus, an electrical resistance RMTJ between a reference layer REF and the magnetization free layer MFR changes from a low state to a high state.

Abstract: A magnetic memory device may include a magnetic tunnel junction pattern that comprises a tunnel barrier pattern, a first magnetic pattern and a second magnetic pattern, a tunnel barrier pattern between the first and second magnetic patterns, a non-magnetic pattern on the second magnetic pattern, and a magnetic material between at least a distal portion of the non-magnetic pattern and the second magnetic pattern. The magnetic material may include a set of fine magnetic patterns between the second magnetic pattern and the non-magnetic pattern, the set of fine magnetic patterns including a pattern of fine magnetic patterns spaced apart from each other in a direction parallel to an interface between the second magnetic pattern and the non-magnetic pattern. The magnetic material may include magnetic atoms, and the non-magnetic material may include a proximate portion that is proximate to the second magnetic pattern, the proximate portion doped with the magnetic atoms.

Abstract: A magnetoresistive element includes a channel layer, a first ferromagnetic layer, a second ferromagnetic layer, and a reference electrode. The first ferromagnetic layer, the second ferromagnetic layer, and the reference electrode are apart from each other and are electrically connected to each other through the channel layer. The effective cross-sectional area of a sixth region according to a plane perpendicularly intersecting a spin-polarized carrier transport path in the sixth region is smaller than the effective cross-sectional area of a seventh region according to a plane perpendicularly intersecting a voltage detection path in the seventh region.

Abstract: Magnetic tunnel junction (MTJ) devices with a heterogeneous free layer structure particularly suited for efficient spin-torque-transfer (STT) magnetic random access memory (MRAM) (STT MRAM) are disclosed. In one aspect, a MTJ structure with a reduced thickness first pinned layer section provided below a first tunnel magneto-resistance (TMR) barrier layer is provided. The first pinned layer section includes one pinned layer magnetized in one magnetic orientation. In another aspect, a second pinned layer section and a second TMR barrier layer are provided above a free layer section and above the first TMR barrier layer in the MTJ. The second pinned layer is magnetized in a magnetic orientation that is anti-parallel (AP) to that of the first pinned layer section. In yet another aspect, the free layer comprises first and second heterogeneous layers separated by an anti-ferromagnetic coupling spacer, the first and second heterogeneous layers differing in their magnetic anisotropy.

Abstract: A magnetoresistive element includes a storage layer as a ferromagnetic layer which has magnetic anisotropy perpendicular to film planes, and in which a magnetization direction is variable, a reference layer as a ferromagnetic layer which has magnetic anisotropy perpendicular to film planes, and in which a magnetization direction is invariable, a tunnel barrier layer as a nonmagnetic layer formed between the storage layer and the reference layer, and a first underlayer formed on a side of the storage layer, which is opposite to a side facing the tunnel barrier layer, and containing amorphous W.

Abstract: The present invention discloses a magnetoresistive gear tooth sensor, which includes a magnetoresistive sensor chip and a permanent magnet. The magnetic sensor chip is comprised of at least one magnetoresistive sensor bridge, and each arm of the sensor bridge has at least one MTJ element group. The magnetoresistive gear tooth sensor has good temperature stability, high sensitivity, low power consumption, good linearity, wide linear range, and a simple structure. Additionally, the magnetoresistive gear tooth sensor has a concave soft ferromagnetic flux concentrator, which can be used to reduce the component of the magnetic field generated by the permanent magnet along the sensing direction of the MTJ sensor elements, enabling a wide linear range. Because it is arranged as a gradiometer, the magnetoresistive gear tooth sensor bridge is not affected by stray magnetic field; it is only affected by the gradient magnetic field generated by gear teeth in response to the permanent magnet bias.

Abstract: A magnetoresistive element (e.g., a spin-torque magnetoresistive memory element) includes a fixed magnetic layer, a free magnetic layer, having a high-iron alloy interface region located along a surface of the free magnetic layer, wherein the high-iron alloy interface region has at least 50% iron by atomic composition, and a first dielectric, disposed between the fixed magnetic layer and the free magnetic layer. The magnetoresistive element further includes a second dielectric, having a first surface that is in contact with the surface of the free magnetic layer, and an electrode, disposed between the second dielectric and a conductor. The electrode includes: (i) a non-ferromagnetic portion having a surface that is in contact with a second surface of the second dielectric, and (ii) a second portion having at least one ferromagnetic material disposed between the non-ferromagnetic portion of the electrode and the conductor.

Abstract: A memory device that includes a first magnetic insulating tunnel barrier reference layer present on a first non-magnetic metal electrode, and a free magnetic metal layer present on the first magnetic insulating tunnel barrier reference layer. A second magnetic insulating tunnel barrier reference layer may be present on the free magnetic metal layer, and a second non-magnetic metal electrode may be present on the second magnetic insulating tunnel barrier. The first and second magnetic insulating tunnel barrier reference layers are arranged so that their magnetizations are aligned to be anti-parallel.

Abstract: Aspects of the present disclosure provide a magnetic reader and methods for fabricating the same. The magnetic reader has a capping layer structure that can reduce or impede the corrosion and/or recession of a shield layer of the magnetic reader. In a particular embodiment, the capping layer structure includes a ruthenium (Ru) layer that is configured to impede oxygen interdiffusion between an IrMn antiferromagnetic layer and a Ta cap layer.

Abstract: A magnetoresistance element has a pinning arrangement with two antiferromagnetic pinning layers, two pinned layers, and a free layer. A spacer layer between one of the two antiferromagnetic pinning layers and the free layer has a material selected to allow a controllable partial pinning by the one of the two antiferromagnetic pinning layers.

Abstract: According to one embodiment, a memory device includes a stacked structure and a controller. The stacked structure includes a first magnetic layer, a second magnetic layer stacked with the first magnetic layer, and a first nonmagnetic layer provided between the first magnetic layer and the second magnetic layer. The second magnetic layer includes a first portion and a second portion stacked with the first portion. A magnetic resonance frequency of the first portion is different from a magnetic resonance frequency of the second portion. The controller is electrically connected to the stacked structure and causes a pulse current to flow in the stacked body in a first period. A length of the first period is not less than 0.9 times and not more than 1.1 times the absolute value of an odd number times of the reciprocal of a magnetic resonance frequency of the second magnetic layer.

Abstract: A magnetic junction and method for providing the magnetic junction are described. The magnetic junction resides on a substrate and is usable in a magnetic device. The magnetic junction includes free and pinned layers separated by a nonmagnetic spacer layer. The free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction. The free layer has a free layer perpendicular magnetic anisotropy energy greater than a free layer out-of-plane demagnetization energy. The free layer includes an alloy. The alloy includes [CoxFeyBz]uMgt, where u+t=1 and x+y+z=1.

Abstract: The present invention is directed to an MRAM device comprising a plurality of MTJ memory elements. Each of the memory elements includes a magnetic free layer and a first magnetic reference layer with an insulating tunnel junction layer interposed therebetween; a second magnetic reference layer formed adjacent to the first magnetic reference layer opposite the insulating tunnel junction layer; an anti-ferromagnetic coupling layer formed adjacent to the second magnetic reference layer opposite the first magnetic reference layer; and a magnetic fixed layer formed adjacent to the anti-ferromagnetic coupling layer. The magnetic free layer has a variable magnetization direction substantially perpendicular to the layer plane thereof. The first and second magnetic reference layers have a first fixed magnetization direction substantially perpendicular to the layer planes thereof.

Abstract: A sensor package includes a magnetic field sensor and a corruption detection and reset subsystem. The magnetic field sensor has a magnetic sense element and a ferromagnetic structure characterized by a baseline magnetic state. The subsystem includes a detector element, a processor, and current carrying structure positioned in proximity to the ferromagnetic structure. Methodology performed by the subsystem entails detecting at the detector element an altered magnetic state of the ferromagnetic structure, where the altered magnetic state differs from the baseline magnetic state. Methodology further entails determining, at the processor, when a reset action is needed in response to the altered magnetic state and applying a reset magnetic field to the ferromagnetic structure to reset the ferromagnetic structure from the altered magnetic state to the baseline magnetic state.

Abstract: According to one embodiment, a current sensor includes a first sensor element and a power line. The first sensor element includes a first electrode, a second electrode, and a first stacked body. The first stacked body is provided between the first electrode and the second electrode. The first stacked body includes a first magnetic layer, a second magnetic layer and a first intermediate layer. The second magnetic layer is provided between the first magnetic layer and the second electrode. The first intermediate layer is provided between the first magnetic layer and the second magnetic layer. The first intermediate layer is nonmagnetic. A magnetization of the second magnetic layer changes according to a magnetic field generated by a current flowing through the power line. At least a portion of the second magnetic layer is amorphous.