Detail Of Free Layer Or Additional Film For Affecting Or Biasing The Free Layer Patents (Class 360/324.12)
  • Patent number: 10672421
    Abstract: A magnetoresistive device includes an MR element and a bias magnetic field generation unit. The MR element includes a free layer shaped to be long in one direction. The bias magnetic field generation unit includes a ferromagnetic layer for generating a bias magnetic field. The ferromagnetic layer includes two main portions, a first side portion, and a second side portion arranged to surround the perimeter of the free layer. In any cross section perpendicular to the longitudinal direction of the free layer, a shortest distance between the first side portion and the free layer and a shortest distance between the second side portion and the free layer are 35 nm or less.
    Type: Grant
    Filed: March 6, 2019
    Date of Patent: June 2, 2020
    Assignee: TDK Corporation
    Inventor: Kenzo Makino
  • Patent number: 10644228
    Abstract: Provided is a spin-orbit-torque magnetization rotational element that suppresses re-adhesion of impurities during preparation and allows a write current to easily flow. The spin-orbit-torque magnetization rotational element includes a spin-orbit torque wiring that extends in a first direction, and a first ferromagnetic layer that is located on a side of one surface of the spin-orbit torque wiring. A side surface of the spin-orbit torque wiring and a side surface of the first ferromagnetic layer form a continuous inclined surface in any side surface.
    Type: Grant
    Filed: November 1, 2018
    Date of Patent: May 5, 2020
    Assignee: TDK CORPORATION
    Inventors: Tomoyuki Sasaki, Yohei Shiokawa, Eiji Komura, Keita Suda
  • Patent number: 10629230
    Abstract: A method of forming a magnetic head includes forming a read sensor stripe, depositing an electronic lapping guide (ELG) layer over the substrate in an ELG region, forming a backside edge of a read sensor by patterning the read sensor stripe in a first patterning step, forming a backside insulator layer and a rear bias magnetic material portion over the backside edge of the read sensor, forming a backside edge of an ELG by patterning the ELG layer in the ELG region in a second patterning step, simultaneously forming a front side edge of the read sensor and a front side edge of the ELG, and lapping the read sensor and the ELG to provide an air bearing surface of a read sensor. The physical stripe height offset can be determined for each flash field by correlating device conductance and ELG conductance.
    Type: Grant
    Filed: April 20, 2017
    Date of Patent: April 21, 2020
    Assignee: WESTERN DIGITAL TECHNOLOGIES, INC.
    Inventors: Guanxiong Li, Ming Mao, Rong Cao, Chen-Jung Chien
  • Patent number: 10622047
    Abstract: A perpendicularly magnetized magnetic tunnel junction (p-MTJ) is disclosed wherein a free layer (FL) has a first interface with a MgO tunnel barrier, a second interface with a Mo or W Hk enhancing layer, and is comprised of FexCoyBz wherein x is 66-80, y is 5-9, z is 15-28, and (x+y+z)=100 to simultaneously provide a magnetoresistive ratio >100%, resistance x area product <5 ohm/?m2, switching voltage <0.15V (direct current), and sufficient Hk to ensure thermal stability to 400° C. annealing. The FL may further comprise one or more M elements such as O or N to give (FexCoyBz)wM100-w where w is >90 atomic %. Alternatively, the FL is a trilayer with a FeB layer contacting MgO to induce Hk at the first interface, a middle FeCoB layer for enhanced magnetoresistive ratio, and a Fe or FeB layer adjoining the Hk enhancing layer to increase thermal stability.
    Type: Grant
    Filed: March 23, 2018
    Date of Patent: April 14, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Hideaki Fukuzawa, Vignesh Sundar, Yu-Jen Wang, Ru-Ying Tong
  • Patent number: 10614840
    Abstract: A recording head that includes a reader having a front end at a bearing surface of the recording head and a rear end behind the bearing surface. The reader has a non-rectangular shape with a front-end width that is less than an average width of the reader. A first bias element is positioned proximate to a first side of the reader, and a second bias element is positioned proximate to a second side of the reader. Each of the first and second bias elements has a bias level that is a function of a ratio of the front-end width to the average width of the reader.
    Type: Grant
    Filed: November 1, 2017
    Date of Patent: April 7, 2020
    Assignee: SEAGATE TECHNOLOGY LLC
    Inventors: Victor Sapozhnikov, Taras Grigorievich Pokhil, Mohammed Shariat Ullah Patwari, Yonghua Chen
  • Patent number: 10614836
    Abstract: In one general embodiment, a method includes performing a reducing operation for reducing a native oxide along a surface of a CoFe layer of a magnetic transducer, after performing the reducing operation, performing an oxidation operation for oxidizing the surface of the CoFe layer, and after performing the oxidation operation, forming a layer of at least partially crystalline alumina on the oxidized surface of the CoFe layer.
    Type: Grant
    Filed: October 24, 2017
    Date of Patent: April 7, 2020
    Assignee: International Business Machines Corporation
    Inventors: Robert G. Biskeborn, Calvin S. Lo, Teya Topuria
  • Patent number: 10593357
    Abstract: A hard magnet stabilization scheme is disclosed for a top shield and junction shields for double or triple dimension magnetic reader structures. In one design, the hard magnet (HM) adjoins a top or bottom surface of all or part of a shield domain such that the HM is recessed from the air bearing surface to satisfy reader-to-reader spacing requirements and stabilizes a closed loop magnetization in the top shield. The HM may have a height and width greater than that of the top shield. The top shield may have a ring shape with a HM formed above, below, or within the ring shape, and wherein the HM stabilizes a vortex magnetization. HM magnetization is set or reset from room temperature to 100° C. to maintain a desired magnetization direction in the top shield, junction shield, and free layer in the sensor.
    Type: Grant
    Filed: October 16, 2018
    Date of Patent: March 17, 2020
    Assignee: Headway Technologies, Inc.
    Inventors: Junjie Quan, Glen Garfunkel, Yewhee Chye, Kunliang Zhang, Min Li
  • Patent number: 10573447
    Abstract: A thin film magnet includes a substrate, an oxidation-inhibiting layer in an amorphous state disposed on an upper surface of the substrate, a first magnetic layer disposed on the oxidation-inhibiting layer, an intermediate layer disposed on the first magnetic layer, a second magnetic layer disposed on the intermediate layer, and a second oxidation-inhibiting layer in an amorphous state disposed above the second magnetic layer. The intermediate layer contains metal particles. The metal particles are diffused in the first magnetic layer and the second magnetic layer. The concentration of the metal particles in a part of the first magnetic layer decreases as the distance from the intermediate layer to the part of the first magnetic layer increases. The concentration of the metal particles in a part of the second magnetic layer decreases as the distance from the intermediate layer to the part of the second magnetic layer increases.
    Type: Grant
    Filed: March 14, 2016
    Date of Patent: February 25, 2020
    Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
    Inventors: Yuji Murashima, Masanori Samejima
  • Patent number: 10566015
    Abstract: A spin transfer torque (STT) device has a free ferromagnetic layer that includes a Heusler alloy layer and a template layer beneath and in contact with the Heusler alloy layer. The template layer may be a ferromagnetic alloy comprising one or more of Co, Ni and Fe and the element X, where X is selected from one or, more of Ta, B, Hf, Zr, W, Nb and Mo. A CoFe nanolayer may be formed below and in contact with the template layer. The STT device may be a spin-torque oscillator (STO), like a STO incorporated into the write head of a magnetic recording disk drive. The STT device may also be a STT in-plane or perpendicular magnetic tunnel junction (MTJ) cell for magnetic random access memory (MRAM). The template layer reduces the critical current density of the STT device.
    Type: Grant
    Filed: May 10, 2018
    Date of Patent: February 18, 2020
    Assignee: WESTERN DIGITAL TECHNOLOGIES, INC.
    Inventors: James Mac Freitag, Zheng Gao, Masahiko Hashimoto, Sangmun Oh, Hua Al Zeng
  • Patent number: 10453481
    Abstract: A method of forming a read head. The method includes forming first and second read sensors that are substantially trapezoidal in shape. A first read measurement is performed on a storage medium using the first read sensor. A second read measurement is performed on the storage medium using the second read sensor. Based on a comparison of the first and second read measurements to a predetermined quantity, either the first read sensor or the second read sensor is selected to be operational in a data storage device.
    Type: Grant
    Filed: August 6, 2018
    Date of Patent: October 22, 2019
    Assignee: SEAGATE TECHNOLOGY LLC
    Inventors: Victor Sapozhnikov, Taras Grigorievich Pokhil, Mohammed Shariat Ullah Patwari
  • Patent number: 10453482
    Abstract: A nonmagnetic spacer layer in a magnetoresistive effect element includes a nonmagnetic metal layer that is formed of Ag and at least one of a first insertion layer that is disposed on a bottom surface of the nonmagnetic metal layer and a second insertion layer that is disposed on a top surface of the nonmagnetic metal layer. The first insertion layer and the second insertion layer include an Fe alloy that is expressed by Fe?X1-?. Here, X denotes one or more elements selected from a group consisting of O, Al, Si, Ga, Mo, Ag, and Au, and ? satisfies 0<?<1.
    Type: Grant
    Filed: May 24, 2018
    Date of Patent: October 22, 2019
    Assignee: TDK CORPORATION
    Inventors: Kazuumi Inubushi, Katsuyuki Nakada
  • Patent number: 10381554
    Abstract: Integrated circuits and methods for fabricating integrated circuits are provided. In one example, an integrated circuit includes a magnetic tunnel junction. The magnetic tunnel junction includes a fixed layer structure, a free layer structure, and a barrier layer disposed between the fixed layer structure and the free layer structure. The fixed layer structure includes a first magnetic layer and a second magnetic layer that is disposed between the first magnetic layer and the barrier layer. The first magnetic layer is configured to produce a first magnetic moment that substantially correlates to a second magnetic moment of the second magnetic layer as a function of temperature.
    Type: Grant
    Filed: September 11, 2017
    Date of Patent: August 13, 2019
    Assignee: GLOBALFOUNDRIES SINGAPORE PTE. LTD.
    Inventors: Vinayak Bharat Naik, Kazutaka Yamane, Seungmo Noh, Kangho Lee, Dimitri Houssameddine, Taiebeh Tahmasebi, Chenchen Jacob Wang
  • Patent number: 10347277
    Abstract: A magnetoresistance element has a pinning arrangement with two antiferromagnetic pinning layers, two pinned layers, and a free layer. A spacer layer between one of the two antiferromagnetic pinning layers and the free layer has a material selected to allow a controllable partial pinning by the one of the two antiferromagnetic pinning layers.
    Type: Grant
    Filed: February 1, 2018
    Date of Patent: July 9, 2019
    Assignees: Allegro MicroSystems, LLC, COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Paolo Campiglio, Bryan Cadugan, Claude Fermon, Rémy Lassalle-Balier
  • Patent number: 10319398
    Abstract: A junction shield (JS) structure is disclosed for providing longitudinal bias to a free layer (FL) having a width (FLW) and magnetization in a cross-track direction between sidewalls in a sensor. The sensor is formed between bottom and top shields and has sidewalls extending from a front side at an air bearing surface (ABS) to a backside that is a stripe height (SH) from the ABS. The JS structure has a lower layer (JS1) with a magnetization parallel to that of the FL, and a tapered top surface such that JS1 has decreasing thickness with increasing height from the ABS. As aspect ratio or AR (SH/FLW) increases above 1, longitudinal bias increases proportionally to slow an increase in asymmetry as AR increases, and without introducing a loss in amplitude for a reader with low AR. The JS1 layer may be antiferromagnetically coupled to an upper JS layer for stabilization.
    Type: Grant
    Filed: August 25, 2017
    Date of Patent: June 11, 2019
    Assignee: Headway Technologies, Inc.
    Inventors: Urmimala Roy, Yan Wu
  • Patent number: 10312433
    Abstract: A ferromagnetic layer is capped with a metallic oxide (or nitride) layer that provides a perpendicular-to-plane magnetic anisotropy to the layer. The surface of the ferromagnetic layer is treated with a plasma to prevent diffusion of oxygen (or nitrogen) into the layer interior. An exemplary metallic oxide layer is formed as a layer of metallic Mg that is plasma treated to reduce its grain size and enhance the diffusivity of oxygen into its interior. Then the plasma treated Mg layer is naturally oxidized and, optionally, is again plasma treated to reduce its thickness and remove the oxygen rich upper surface.
    Type: Grant
    Filed: April 6, 2012
    Date of Patent: June 4, 2019
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd
    Inventors: Guenole Jan, Ru-Ying Tong
  • Patent number: 10199569
    Abstract: A magnetic element is provided. The magnetic element includes a free magnetization layer having a surface area that is approximately 1,600 nm2 or less, the free magnetization layer including a magnetization state that is configured to be changed; an insulation layer coupled to the free magnetization layer, the insulation layer including a non-magnetic material; and a magnetization fixing layer coupled to the insulation layer opposite the free magnetization layer, the magnetization fixing layer including a fixed magnetization so as to be capable of serving as a reference of the free magnetization layer.
    Type: Grant
    Filed: March 14, 2017
    Date of Patent: February 5, 2019
    Assignee: Sony Corporation
    Inventors: Kazutaka Yamane, Masanori Hosomi, Hiroyuki Ohmori, Kazuhiro Bessho, Yutaka Higo, Tetsuya Asayama, Hiroyuki Uchida
  • Patent number: 10170689
    Abstract: The present invention provides a magnetoresistive effect element which performs writing by a novel method. In a state in which a current does not flow in a magnetization free layer MFR, the magnetization free layer MFR has a magnetic wall MW1 on the side of a magnetization fixed layer MFX1. A magnetic wall MW2 is moved to the magnetic wall MW1 side by causing current to flow from the formed side of the magnetic wall MW1. Thus, an electrical resistance RMTJ between a reference layer REF and the magnetization free layer MFR changes from a low state to a high state.
    Type: Grant
    Filed: January 7, 2015
    Date of Patent: January 1, 2019
    Assignee: Renesas Electronics Corporation
    Inventors: Hironobu Tanigawa, Tetsuhiro Suzuki, Katsumi Suemitsu, Takuya Kitamura, Eiji Kariyada
  • Patent number: 10147871
    Abstract: A magnetic memory device may include a magnetic tunnel junction pattern that comprises a tunnel barrier pattern, a first magnetic pattern and a second magnetic pattern, a tunnel barrier pattern between the first and second magnetic patterns, a non-magnetic pattern on the second magnetic pattern, and a magnetic material between at least a distal portion of the non-magnetic pattern and the second magnetic pattern. The magnetic material may include a set of fine magnetic patterns between the second magnetic pattern and the non-magnetic pattern, the set of fine magnetic patterns including a pattern of fine magnetic patterns spaced apart from each other in a direction parallel to an interface between the second magnetic pattern and the non-magnetic pattern. The magnetic material may include magnetic atoms, and the non-magnetic material may include a proximate portion that is proximate to the second magnetic pattern, the proximate portion doped with the magnetic atoms.
    Type: Grant
    Filed: March 30, 2017
    Date of Patent: December 4, 2018
    Assignee: Samsung Electronics Co., Ltd.
    Inventor: Sungmin Ahn
  • Patent number: 10141501
    Abstract: A magnetoresistive element includes a channel layer, a first ferromagnetic layer, a second ferromagnetic layer, and a reference electrode. The first ferromagnetic layer, the second ferromagnetic layer, and the reference electrode are apart from each other and are electrically connected to each other through the channel layer. The effective cross-sectional area of a sixth region according to a plane perpendicularly intersecting a spin-polarized carrier transport path in the sixth region is smaller than the effective cross-sectional area of a seventh region according to a plane perpendicularly intersecting a voltage detection path in the seventh region.
    Type: Grant
    Filed: March 16, 2017
    Date of Patent: November 27, 2018
    Assignee: TDK CORPORATION
    Inventor: Hayato Koike
  • Patent number: 10134808
    Abstract: Magnetic tunnel junction (MTJ) devices with a heterogeneous free layer structure particularly suited for efficient spin-torque-transfer (STT) magnetic random access memory (MRAM) (STT MRAM) are disclosed. In one aspect, a MTJ structure with a reduced thickness first pinned layer section provided below a first tunnel magneto-resistance (TMR) barrier layer is provided. The first pinned layer section includes one pinned layer magnetized in one magnetic orientation. In another aspect, a second pinned layer section and a second TMR barrier layer are provided above a free layer section and above the first TMR barrier layer in the MTJ. The second pinned layer is magnetized in a magnetic orientation that is anti-parallel (AP) to that of the first pinned layer section. In yet another aspect, the free layer comprises first and second heterogeneous layers separated by an anti-ferromagnetic coupling spacer, the first and second heterogeneous layers differing in their magnetic anisotropy.
    Type: Grant
    Filed: April 25, 2016
    Date of Patent: November 20, 2018
    Assignee: QUALCOMM Incorporated
    Inventors: Jimmy Jianan Kan, Chando Park, Matthias Georg Gottwald, Seung Hyuk Kang
  • Patent number: 10090459
    Abstract: A magnetoresistive element includes a storage layer as a ferromagnetic layer which has magnetic anisotropy perpendicular to film planes, and in which a magnetization direction is variable, a reference layer as a ferromagnetic layer which has magnetic anisotropy perpendicular to film planes, and in which a magnetization direction is invariable, a tunnel barrier layer as a nonmagnetic layer formed between the storage layer and the reference layer, and a first underlayer formed on a side of the storage layer, which is opposite to a side facing the tunnel barrier layer, and containing amorphous W.
    Type: Grant
    Filed: January 3, 2017
    Date of Patent: October 2, 2018
    Assignee: TOSHIBA MEMORY CORPORATION
    Inventors: Daisuke Watanabe, Youngmin Eeh, Kazuya Sawada, Koji Ueda, Toshihiko Nagase
  • Patent number: 10060941
    Abstract: The present invention discloses a magnetoresistive gear tooth sensor, which includes a magnetoresistive sensor chip and a permanent magnet. The magnetic sensor chip is comprised of at least one magnetoresistive sensor bridge, and each arm of the sensor bridge has at least one MTJ element group. The magnetoresistive gear tooth sensor has good temperature stability, high sensitivity, low power consumption, good linearity, wide linear range, and a simple structure. Additionally, the magnetoresistive gear tooth sensor has a concave soft ferromagnetic flux concentrator, which can be used to reduce the component of the magnetic field generated by the permanent magnet along the sensing direction of the MTJ sensor elements, enabling a wide linear range. Because it is arranged as a gradiometer, the magnetoresistive gear tooth sensor bridge is not affected by stray magnetic field; it is only affected by the gradient magnetic field generated by gear teeth in response to the permanent magnet bias.
    Type: Grant
    Filed: June 4, 2013
    Date of Patent: August 28, 2018
    Assignee: MultiDimension Technology Co., Ltd.
    Inventors: Jianmin Bai, James Geza Deak, Hua Iv, Weifeng Shen
  • Patent number: 9947865
    Abstract: A magnetoresistive element (e.g., a spin-torque magnetoresistive memory element) includes a fixed magnetic layer, a free magnetic layer, having a high-iron alloy interface region located along a surface of the free magnetic layer, wherein the high-iron alloy interface region has at least 50% iron by atomic composition, and a first dielectric, disposed between the fixed magnetic layer and the free magnetic layer. The magnetoresistive element further includes a second dielectric, having a first surface that is in contact with the surface of the free magnetic layer, and an electrode, disposed between the second dielectric and a conductor. The electrode includes: (i) a non-ferromagnetic portion having a surface that is in contact with a second surface of the second dielectric, and (ii) a second portion having at least one ferromagnetic material disposed between the non-ferromagnetic portion of the electrode and the conductor.
    Type: Grant
    Filed: January 6, 2017
    Date of Patent: April 17, 2018
    Assignee: Everspin Technologies, Inc.
    Inventors: Renu Whig, Jijun Sun, Nicholas Rizzo, Jon Slaughter, Dimitri Houssameddine, Frederick Mancoff
  • Patent number: 9940956
    Abstract: Aspects of the present disclosure provide a magnetic reader and methods for fabricating the same. The magnetic reader has a capping layer structure that can reduce or impede the corrosion and/or recession of a shield layer of the magnetic reader. In a particular embodiment, the capping layer structure includes a ruthenium (Ru) layer that is configured to impede oxygen interdiffusion between an IrMn antiferromagnetic layer and a Ta cap layer.
    Type: Grant
    Filed: June 30, 2016
    Date of Patent: April 10, 2018
    Assignee: Western Digital (Fremont), LLC
    Inventors: Rong R. Cao, Yung-Hung Wang, Lifan Chen, Haifeng Wang, Chih-Ching Hu
  • Patent number: 9941469
    Abstract: A memory device that includes a first magnetic insulating tunnel barrier reference layer present on a first non-magnetic metal electrode, and a free magnetic metal layer present on the first magnetic insulating tunnel barrier reference layer. A second magnetic insulating tunnel barrier reference layer may be present on the free magnetic metal layer, and a second non-magnetic metal electrode may be present on the second magnetic insulating tunnel barrier. The first and second magnetic insulating tunnel barrier reference layers are arranged so that their magnetizations are aligned to be anti-parallel.
    Type: Grant
    Filed: October 6, 2015
    Date of Patent: April 10, 2018
    Assignee: International Business Machines Corporation
    Inventor: Daniel C. Worledge
  • Patent number: 9922673
    Abstract: A magnetoresistance element has a pinning arrangement with two antiferromagnetic pinning layers, two pinned layers, and a free layer. A spacer layer between one of the two antiferromagnetic pinning layers and the free layer has a material selected to allow a controllable partial pinning by the one of the two antiferromagnetic pinning layers.
    Type: Grant
    Filed: October 31, 2014
    Date of Patent: March 20, 2018
    Assignees: Allegro MicroSystems, LLC, Commissariat A L'Energie Atomique et Aux Energies Alternatives
    Inventors: Paolo Campiglio, Bryan Cadugan, Claude Fermon, Rémy Lassalle-Balier
  • Patent number: 9882122
    Abstract: According to one embodiment, a memory device includes a stacked structure and a controller. The stacked structure includes a first magnetic layer, a second magnetic layer stacked with the first magnetic layer, and a first nonmagnetic layer provided between the first magnetic layer and the second magnetic layer. The second magnetic layer includes a first portion and a second portion stacked with the first portion. A magnetic resonance frequency of the first portion is different from a magnetic resonance frequency of the second portion. The controller is electrically connected to the stacked structure and causes a pulse current to flow in the stacked body in a first period. A length of the first period is not less than 0.9 times and not more than 1.1 times the absolute value of an odd number times of the reciprocal of a magnetic resonance frequency of the second magnetic layer.
    Type: Grant
    Filed: August 29, 2016
    Date of Patent: January 30, 2018
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Daisuke Saida, Naoharu Shimomura
  • Patent number: 9876164
    Abstract: A magnetic junction and method for providing the magnetic junction are described. The magnetic junction resides on a substrate and is usable in a magnetic device. The magnetic junction includes free and pinned layers separated by a nonmagnetic spacer layer. The free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction. The free layer has a free layer perpendicular magnetic anisotropy energy greater than a free layer out-of-plane demagnetization energy. The free layer includes an alloy. The alloy includes [CoxFeyBz]uMgt, where u+t=1 and x+y+z=1.
    Type: Grant
    Filed: December 1, 2016
    Date of Patent: January 23, 2018
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Xueti Tang, Mohamad Towfik Krounbi, Dustin Erickson, Donkoun Lee, Gen Feng
  • Patent number: 9871191
    Abstract: The present invention is directed to an MRAM device comprising a plurality of MTJ memory elements. Each of the memory elements includes a magnetic free layer and a first magnetic reference layer with an insulating tunnel junction layer interposed therebetween; a second magnetic reference layer formed adjacent to the first magnetic reference layer opposite the insulating tunnel junction layer; an anti-ferromagnetic coupling layer formed adjacent to the second magnetic reference layer opposite the first magnetic reference layer; and a magnetic fixed layer formed adjacent to the anti-ferromagnetic coupling layer. The magnetic free layer has a variable magnetization direction substantially perpendicular to the layer plane thereof. The first and second magnetic reference layers have a first fixed magnetization direction substantially perpendicular to the layer planes thereof.
    Type: Grant
    Filed: June 3, 2015
    Date of Patent: January 16, 2018
    Assignee: Avalanche Technology, Inc.
    Inventors: Yuchen Zhou, Yiming Huai, Zihui Wang, Xiaojie Hao, Huadong Gan, Xiaobin Wang
  • Patent number: 9857435
    Abstract: A sensor package includes a magnetic field sensor and a corruption detection and reset subsystem. The magnetic field sensor has a magnetic sense element and a ferromagnetic structure characterized by a baseline magnetic state. The subsystem includes a detector element, a processor, and current carrying structure positioned in proximity to the ferromagnetic structure. Methodology performed by the subsystem entails detecting at the detector element an altered magnetic state of the ferromagnetic structure, where the altered magnetic state differs from the baseline magnetic state. Methodology further entails determining, at the processor, when a reset action is needed in response to the altered magnetic state and applying a reset magnetic field to the ferromagnetic structure to reset the ferromagnetic structure from the altered magnetic state to the baseline magnetic state.
    Type: Grant
    Filed: May 12, 2015
    Date of Patent: January 2, 2018
    Assignee: NXP USA, Inc.
    Inventors: Paige M. Holm, Lianjun Liu
  • Patent number: 9841444
    Abstract: According to one embodiment, a current sensor includes a first sensor element and a power line. The first sensor element includes a first electrode, a second electrode, and a first stacked body. The first stacked body is provided between the first electrode and the second electrode. The first stacked body includes a first magnetic layer, a second magnetic layer and a first intermediate layer. The second magnetic layer is provided between the first magnetic layer and the second electrode. The first intermediate layer is provided between the first magnetic layer and the second magnetic layer. The first intermediate layer is nonmagnetic. A magnetization of the second magnetic layer changes according to a magnetic field generated by a current flowing through the power line. At least a portion of the second magnetic layer is amorphous.
    Type: Grant
    Filed: December 18, 2014
    Date of Patent: December 12, 2017
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Hideaki Fukuzawa, Yoshihiko Fuji, Shiori Kaji, Yoshihiro Higashi
  • Patent number: 9799383
    Abstract: According to one embodiment, the magnetic memory device includes a first magnetoresistive element and a second magnetoresistive element which are adjacent to each other. Each of the first and second magnetoresistive elements includes a first magnetic layer, a first non-magnetic later on the first magnetic layer, a second magnetic layer on the first non-magnetic layer, a second non-magnetic layer on the second magnetic layer, and a third magnetic layer on the second non-magnetic layer. Furthermore, the magnetic memory device further includes a fourth magnetic layer being in contact with the first and second magnetoresistive elements or in contact with conductive layers on the first and second magnetoresistive elements.
    Type: Grant
    Filed: September 9, 2016
    Date of Patent: October 24, 2017
    Assignee: TOSHIBA MEMORY CORPORATION
    Inventors: Keiji Hosotani, Tatsuya Kishi
  • Patent number: 9761254
    Abstract: A MR sensor is disclosed that has a free layer (FL) with perpendicular magnetic anisotropy (PMA), which eliminates the need for an adjacent hard bias structure to stabilize free layer magnetization, and minimizes shield-FL interactions. In a TMR embodiment, a seed layer, free layer, junction layer, reference layer, and pinning layer are sequentially formed on a bottom shield. After forming a sensor sidewall that stops in the seed layer or on the bottom shield, a conformal insulation layer is deposited. Thereafter, a top shield is formed on the insulation layer and includes side shields that are separated from the FL by a narrow read gap. The sensor is scalable to widths <50 nm when PMA is greater than the FL self-demag field. Effective bias field is rather insensitive to sensor aspect ratio, which makes tall stripe and narrow width sensors viable for high RA TMR configurations.
    Type: Grant
    Filed: November 29, 2016
    Date of Patent: September 12, 2017
    Assignee: Headway Technologies, Inc.
    Inventors: Yuchen Zhou, Kunliang Zhang, Zhi Gang Bai
  • Patent number: 9678178
    Abstract: Disclosed is a magnetoresistive magnetic field gradient sensor, comprising a substrate, a magnetoresistive bridge and a permanent magnet respectively disposed on the substrate; the magnetoresistive bridge comprises two or more magnetoresistive arms; each magnetoresistive arm consists of one or more magnetoresistive elements; each magnetoresistive element is provided with a magnetic pinning layer; the magnetic pinning layers of all the magnetoresistive elements have the same magnetic moment direction; the permanent magnet is disposed adjacent to each magnetoresistive arm to provide a bias field, and to zero the offset of the response curve of the magnetoresistive element; the magnetoresistive gradiometer includes wire bonding pads that can be electrically interconnected using wire bonding to an ASIC or to the lead frame of a semiconductor chip package.
    Type: Grant
    Filed: January 29, 2013
    Date of Patent: June 13, 2017
    Assignee: MultiDimension Technology Co., Ltd.
    Inventors: Jianmin Bai, James Geza Deak, Mingfeng Liu, Weifeng Shen
  • Patent number: 9666789
    Abstract: A semiconductor device is provided having a free layer and a pinned layer spaced apart from each other. A tunnel barrier layer is formed between the free layer and the pinned layer. The pinned layer may include a lower pinned layer, and an upper pinned layer spaced apart from the lower pinned layer. A spacer may be formed between the lower pinned layer and the upper pinned layer. A non-magnetic junction layer may be disposed adjacent to the spacer or between layers in the upper or lower pinned layer.
    Type: Grant
    Filed: June 16, 2015
    Date of Patent: May 30, 2017
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jeong-Heon Park, Ki-Woong Kim, Hee-Ju Shin, Joon-Myoung Lee, Woo-Jin Kim, Jae-Hoon Kim, Se-Chung Oh, Yun-Jae Lee
  • Patent number: 9577184
    Abstract: A TMR sensor that includes a free layer having at least one B-containing (BC) layer made of CoFeB, CoFeBM, CoB, CoBM, or CoBLM, and a plurality of non-B containing (NBC) layers made of CoFe, CoFeM, or CoFeLM is disclosed where L and M are one of Ni, Ta, Ti, W, Zr, Hf, Tb, or Nb. One embodiment is represented by (NBC/BC)n where n?2. A second embodiment is represented by (NBC/BC)n/NBC where n?1. In every embodiment, a NBC layer contacts the tunnel barrier and NBC layers each with a thickness from 2 to 8 Angstroms are formed in alternating fashion with one or more BC layers each 10 to 80 Angstroms thick. Total free layer thickness is <100 Angstroms. The free layer configuration described herein enables a significant noise reduction (SNR enhancement) while realizing a high TMR ratio, low magnetostriction, low RA, and low Hc values.
    Type: Grant
    Filed: May 15, 2015
    Date of Patent: February 21, 2017
    Assignee: Headway Technologies, Inc.
    Inventors: Tong Zhao, Hui-Chuan Wang, Yu-Chen Zhou, Min Li, Kunliang Zhang
  • Patent number: 9564580
    Abstract: A mechanism relates to magnetic random access memory (MRAM). A free magnetic layer is provided and first fixed layers are disposed above the free magnetic layer. Second fixed layers are disposed below the free magnetic layer. The first fixed layers and the second fixed layers both comprise a rare earth element.
    Type: Grant
    Filed: December 29, 2014
    Date of Patent: February 7, 2017
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Guohan Hu, Daniel C. Worledge
  • Patent number: 9559144
    Abstract: The present invention is directed to a spin transfer torque (STT) MRAM device having a perpendicular magnetic tunnel junction (MTJ) memory element. The memory element includes a perpendicular MTJ structure in between a non-magnetic seed layer and a non-magnetic cap layer. The MTJ structure comprises a magnetic free layer structure and a magnetic reference layer structure with an insulating tunnel junction layer interposed therebetween, an anti-ferromagnetic coupling layer formed adjacent to the magnetic reference layer structure, and a magnetic fixed layer formed adjacent to the anti-ferromagnetic coupling layer. At least one of the magnetic free and reference layer structures includes a non-magnetic perpendicular enhancement layer, which improves the perpendicular anisotropy of magnetic layers adjacent thereto.
    Type: Grant
    Filed: June 3, 2015
    Date of Patent: January 31, 2017
    Assignee: Avalanche Technology, Inc.
    Inventors: Huadong Gan, Yiming Huai, Yuchen Zhou, Zihui Wang, Xiaobin Wang, Bing K. Yen
  • Patent number: 9530959
    Abstract: A method of forming a magnetic electrode of a magnetic tunnel junction comprises forming non-magnetic MgO-comprising material over conductive material of the magnetic electrode being formed. An amorphous metal is formed over the MgO-comprising material. Amorphous magnetic electrode material comprising Co and Fe is formed over the amorphous metal. The amorphous magnetic electrode material is devoid of B. Non-magnetic tunnel insulator material comprising MgO is formed directly against the amorphous magnetic electrode material. The tunnel insulator material is devoid of B. After forming the tunnel insulator material, the amorphous Co and Fe-comprising magnetic electrode material is annealed at a temperature of at least about 250° C. to form crystalline Co and Fe-comprising magnetic electrode material from an MgO-comprising surface of the tunnel insulator material. The crystalline Co and Fe-comprising magnetic electrode material is devoid of B. Other method and non-method embodiments are disclosed.
    Type: Grant
    Filed: April 15, 2015
    Date of Patent: December 27, 2016
    Assignee: Micron Technology, Inc.
    Inventors: Manzar Siddik, Witold Kula, Gurtej S. Sandhu
  • Patent number: 9520553
    Abstract: A method of forming a magnetic electrode of a magnetic tunnel junction comprises forming non-magnetic MgO-comprising material over conductive material of the magnetic electrode being formed. An amorphous metal is formed over the MgO-comprising material. Amorphous magnetic electrode material comprising Co and Fe is formed over the amorphous metal. The amorphous magnetic electrode material is devoid of B. Non-magnetic tunnel insulator material comprising MgO is formed directly against the amorphous magnetic electrode material. The tunnel insulator material is devoid of B. After forming the tunnel insulator material, the amorphous Co and Fe-comprising magnetic electrode material is annealed at a temperature of at least about 250° C. to form crystalline Co and Fe-comprising magnetic electrode material from an MgO-comprising surface of the tunnel insulator material. The crystalline Co and Fe-comprising magnetic electrode material is devoid of B. Other method and non-method embodiments are disclosed.
    Type: Grant
    Filed: April 15, 2015
    Date of Patent: December 13, 2016
    Assignee: Micron Technology, Inc.
    Inventors: Manzar Siddik, Witold Kula, Gurtej S. Sandhu
  • Patent number: 9515253
    Abstract: A TMR stack or a GMR stack, ultimately formed into a sensor or MRAM element, include insertion layers of Fe or iron rich layers of FeX in its ferromagnetic free layer and/or the AP1 layer of its SyAP pinned layer. X is a non-magnetic, metallic element (or elements) chosen from Ta, Hf, V, Co, Mo, Zr, Nb or Ti whose total atom percent is less than 50%. The insertion layers are between 1 and 10 angstroms in thickness, with between 2 and 5 angstroms being preferred and, in the TMR stack, they are inserted adjacent to the interfaces between a tunneling barrier layer and the ferromagnetic free layer or the tunneling barrier layer and the AP1 layer of the SyAP pinned layer in the TMR stack. The insertion layers constrain interdiffusion of B and Ni from CoFeB and NiFe layers and block NiFe crystalline growth.
    Type: Grant
    Filed: June 24, 2015
    Date of Patent: December 6, 2016
    Assignee: Headway Technologies, Inc.
    Inventors: Kunliang Zhang, Hui-Chuan Wang, Junjie Quan, Yewhee Chye, Min Li
  • Patent number: 9508365
    Abstract: A magnetic read apparatus has an air-bearing surface (ABS) and includes a shield, a crystal decoupling structure on the shield and a read sensor on the crystal decoupling structure. The crystal decoupling structure includes at least one of a magnetic high crystalline temperature amorphous alloy layer and a combination of a high crystalline temperature amorphous layer and an amorphous magnetic layer. The high crystalline temperature amorphous layer has a crystalline temperature of at least three hundred degrees Celsius. The amorphous magnetic layer is amorphous as-deposited.
    Type: Grant
    Filed: June 24, 2015
    Date of Patent: November 29, 2016
    Assignee: WESTERN DIGITAL (FREMONT), LLC.
    Inventors: Yuankai Zheng, Qunwen Leng, Xin Jiang, Tong Zhao, Zhitao Diao, Christian Kaiser, Zhipeng Li, Jianxin Fang
  • Patent number: 9478730
    Abstract: A method and system for providing a magnetic junction usable in a magnetic device are described. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, and a free layer. The nonmagnetic spacer layer is between the pinned layer and the free layer. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction. At least one of the pinned layer and the free layer includes a magnetic substructure. The magnetic substructure includes at least two magnetic layers interleaved with at least one insertion layer. Each of the at least one insertion layer includes at least one of Bi, W, I, Zn, Nb, Ag, Cd, Hf, Os, Mo, Ca, Hg, Sc, Y, Sr, Mg, Ti, Ba, K, Na, Rb, Pb, and Zr. The at least two magnetic layers are magnetically coupled.
    Type: Grant
    Filed: April 18, 2013
    Date of Patent: October 25, 2016
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Roman Chepulskyy, Dmytro Apalkov, Alexey Vasilyevitch Khvalkovskiy
  • Patent number: 9472596
    Abstract: Some embodiments relate to an integrated circuit device including an array of memory cells disposed over a semiconductor substrate. An array of first metal lines are disposed at a first height over the substrate and are connected to the memory cells of the array. Each of the first metal lines has a first cross-sectional area. An array of second metal lines are disposed at a second height over the substrate and are connected to the memory cells of the array. Each of the second metal lines has a second cross-sectional area which is greater than the first cross-sectional area.
    Type: Grant
    Filed: December 14, 2015
    Date of Patent: October 18, 2016
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chun-Yang Tsai, Yu-Wei Ting, Kuo-Ching Huang
  • Patent number: 9460737
    Abstract: The use of supermalloy-like materials for the side and top shields of a magnetic bit sensor is shown to provide better shielding protection from stray fields because of their extremely high permeability.
    Type: Grant
    Filed: April 18, 2013
    Date of Patent: October 4, 2016
    Assignee: Headway Technologies, Inc.
    Inventors: Yewhee Chye, Kunliang Zhang, Min Li
  • Patent number: 9450178
    Abstract: A method for manufacturing a magnetoresistive sensor may include the following steps: forming a trench structure in a substrate, wherein the step of forming the trench structure comprises performing a wet etching process on a substrate material member, wherein the trench structure has a first side, a second side, and a third side, wherein the second side is connected through the first side to the third side, wherein the second side is at a first obtuse angle with respect to a side of the substrate, and wherein the third side is at a second obtuse angle with respect to the side of the substrate; forming a first magnetic element on the first side of the trench structure; forming a second magnetic element on the second side of the trench structure; and forming a third magnetic element on the third side of the trench structure.
    Type: Grant
    Filed: March 25, 2015
    Date of Patent: September 20, 2016
    Assignee: Semiconductor Manufacturing International (Shanghai) Corporation
    Inventors: Wei Xu, Guoan Liu
  • Patent number: 9429633
    Abstract: A magnetic sensor that utilizes Rashba effect to generate spin polarization. The sensor eliminates the need for a pinned layer structure and therefore, greatly reduces the gap thickness of the sensor allowing for greatly improved data density. The sensor includes a two dimensional conductor adjacent to a magnetic free layer, that can also be separated from the free layer by a non-magnetic, electrically insulating barrier layer and that can also be constructed with or without side shields. A current flow through the two-dimensional conductor in a direction parallel with the air bearing surface causes a spin polarization oriented perpendicular to the air bearing surface. The voltage output of the sensor changes with changing magnetization direction of the free layer relative to spin polarization in the two dimensional conductor.
    Type: Grant
    Filed: February 11, 2013
    Date of Patent: August 30, 2016
    Assignee: HGST Netherlands B.V.
    Inventors: Goran Mihajlovic, Petrus A. Van Der Heijden
  • Patent number: 9406322
    Abstract: Embodiments of the present invention generally include magnetoresistive heads, such as read heads, having a sensor structure and side shields disposed adjacent to the sensor structure. The distance between the side shields and the sensor structure increase in a direction from an ABS in the off-track direction. The magnetoresistive heads may include tapered surfaces on the side shields or sensor structure, or may include stepped surfaces on the side shields or sensor structure.
    Type: Grant
    Filed: September 11, 2015
    Date of Patent: August 2, 2016
    Assignee: HGST Netherlands B.V.
    Inventors: Jun Aoyama, Masahiko Hatatani, Hiroyuki Katada, Masato Shiimoto
  • Patent number: 9396742
    Abstract: A magnetic read transducer including a magnetoresistive sensor is described, as well as a fabrication method thereof. The magnetoresistive sensor includes a cap layer overlaying a free layer. The cap layer is situated with a first thickness to absorb boron from the free layer. The magnetoresistive sensor is annealed, and boron is diffused from the free layer and absorbed by the cap layer, improving the magnetic performance of the free layer. The cap layer thickness is then reduced to a second thickness, thereby reducing the shield-to-shield (SS) stack spacing of the magnetoresistive sensor and allowing for increased areal recording density.
    Type: Grant
    Filed: March 13, 2015
    Date of Patent: July 19, 2016
    Assignee: Western Digital (Fremont), LLC
    Inventors: Cheng-Han Yang, Chen-Jung Chen, Christian Kaiser, Yuankai Zheng, Qunwen Leng, Mahendra Pakala
  • Patent number: 9396743
    Abstract: Systems and methods for controlling a thickness of a soft bias layer in a tunnel magnetoresistance (TMR) reader are provided. One such method involves providing a magnetoresistive sensor stack including a free layer and a bottom shield layer, performing contiguous junction milling on the sensor stack, depositing an insulating layer on the sensor stack, depositing a spacer layer on the insulating layer, performing an angled milling sub-process to remove preselected portions of the spacer layer, depositing a soft bias layer on the sensor stack, and depositing a top shield layer on the sensor stack and the soft bias layer. The method can further involve adjusting an alignment of a top surface of the spacer layer with respect to the free layer. In one such case, the top surface of the spacer layer is adjusted to be below the free layer.
    Type: Grant
    Filed: June 18, 2014
    Date of Patent: July 19, 2016
    Assignee: Western Digital (Fremont), LLC
    Inventors: Yi Zheng, Ming Jiang, Anup G. Roy, Guanxiong Li, Ming Mao, Daniele Mauri