Abstract: It is recognized that, because of its unique properties, graphene can serve as an interface with biological cells that communicate by an electrical impulse, or action potential. Responding to a sensed signal can be accomplished by coupling a graphene sensor to a low power digital electronic switch that is activatable by the sensed low power electrical signals. It is further recognized that low power devices such as tunneling diodes and TFETs are suitable for use in such biological applications in conjunction with graphene sensors. While tunneling diodes can be used in diagnostic applications, TFETs, which are three-terminal devices, further permit controlling the voltage on one cell according to signals received by other cells. Thus, by the use of a biological sensor system that includes graphene nanowire sensors coupled to a TFET, charge can be redistributed among different biological cells, potentially with therapeutic effects.

Abstract: A display device includes a display panel having improved reliability and a reduced non-display area. The display panel includes: a substrate including a non-display area and a display area outside the non-display area, the non-display area surrounding an transmission area; a plurality of display elements arranged in the display area; a plurality of first lines extending in a first direction and including a detour portion that detours around an edge of the transmission area; and a shield layer arranged over the detour portion of the non-display area so as to overlap the detour portion and include a hole corresponding to the transmission area.

Abstract: A nonvolatile protein memory system with optical write/erase and electrical readout capability is provided. The nonvolatile protein memory system includes: a substrate including a microfluidic channel having a pH gradient; a photosensitive protein disposed in the microfluidic channel; and a first electrode and a second electrode disposed on the microfluidic channel and spaced apart from each other and detecting a position change of the photosensitive protein in the microfluidic channel.

Abstract: A method for electrical and optical bistable switching, including the following steps: providing a semiconductor device that includes a semiconductor base region of a first conductivity type between semiconductor collector and emitter regions of a second conductivity type, providing a quantum size region in the base region, and providing base, collector and emitter terminals respectively coupled with the base, collector, and emitter regions; providing input electrical signals with respect to the base, collector, and emitter terminals to obtain an electrical output signal and light emission from the base region; providing an optical resonant cavity that encloses at least a portion of the base region and the light emission therefrom, an optical output signal being obtained from a portion of the light in the optical resonant cavity; and modifying the input electrical signals to switch back and forth between a first state wherein the photon density in the cavity is below a predetermined threshold and the optical

Abstract: A single chip dual-channel driver for two independent traveling wave modulators. The driver includes two differential pairs inputs per channel respectively configured to receive two digital differential pair signals. The driver further includes a two-bit DAC per channel coupled to the two differential pairs inputs to produce a single analog differential pair PAM signal at a differential pair output for driving a traveling wave modulator. Additionally, the driver includes a control block having internal voltage/current signal generators respective coupled to each input and the 2-bit DAC for providing a bias voltage, a tail current, a dither signal to assist modulation control per channel. Furthermore, the driver includes an internal I2C communication block coupled to a high-speed clock generator to generate control signals to the control block and coupled to host via an I2C digital communication interface.

Abstract: A single chip dual-channel driver for two independent traveling wave modulators. The driver includes two differential pairs inputs per channel respectively configured to receive two digital differential pair signals. The driver further includes a two-bit DAC per channel coupled to the two differential pairs inputs to produce a single analog differential pair PAM signal at a differential pair output for driving a traveling wave modulator. Additionally, the driver includes a control block having internal voltage/current signal generators respective coupled to each input and the 2-bit DAC for providing a bias voltage, a tail current, a dither signal to assist modulation control per channel. Furthermore, the driver includes an internal I2C communication block coupled to a high-speed clock generator to generate control signals to the control block and coupled to host via an I2C digital communication interface.

Abstract: A single chip dual-channel driver for two independent traveling wave modulators. The driver includes two differential pairs inputs per channel respectively configured to receive two digital differential pair signals. The driver further includes a two-bit DAC per channel coupled to the two differential pairs inputs to produce a single analog differential pair PAM signal at a differential pair output for driving a traveling wave modulator. Additionally, the driver includes a control block having internal voltage/current signal generators respective coupled to each input and the 2-bit DAC for providing a bias voltage, a tail current, a dither signal to assist modulation control per channel. Furthermore, the driver includes an internal I2C communication block coupled to a high-speed clock generator to generate control signals to the control block and coupled to host via an I2C digital communication interface.

Abstract: A single chip dual-channel driver for two independent traveling wave modulators. The driver includes two differential pairs inputs per channel respectively configured to receive two digital differential pair signals. The driver further includes a two-bit DAC per channel coupled to the two differential pairs inputs to produce a single analog differential pair PAM signal at a differential pair output for driving a traveling wave modulator. Additionally, the driver includes a control block having internal voltage/current signal generators respective coupled to each input and the 2-bit DAC for providing a bias voltage, a tail current, a dither signal to assist modulation control per channel. Furthermore, the driver includes an internal I2C communication block coupled to a high-speed clock generator to generate control signals to the control block and coupled to host via an I2C digital communication interface.

Abstract: A sensor circuit includes a transistor comprising an oxide semiconductor; a first circuit which supplies one of a first potential and a second potential; a first switch; a second switch; and a second circuit to which a current flowing between a source and a drain of the transistor is applied via the second switch when the first potential is applied to a gate of the transistor. The first potential is lower than a potential of the source or a potential of the drain of the transistor, and the second potential is higher than the potential of the source or the potential of the drain of the transistor. The first switch electrically connects the source and the drain of the transistor when the second potential is applied to the gate of the transistor, and electrically isolates them when the first potential is applied to the gate of the transistor.

Abstract: A single chip dual-channel driver for two independent traveling wave modulators. The driver includes two differential pairs inputs per channel respectively configured to receive two digital differential pair signals. The driver further includes a two-bit DAC per channel coupled to the two differential pairs inputs to produce a single analog differential pair PAM signal at a differential pair output for driving a traveling wave modulator. Additionally, the driver includes a control block having internal voltage/current signal generators respective coupled to each input and the 2-bit DAC for providing a bias voltage, a tail current, a dither signal to assist modulation control per channel. Furthermore, the driver includes an internal I2C communication block coupled to a high-speed clock generator to generate control signals to the control block and coupled to host via an I2C digital communication interface.

Abstract: Disclosed are various embodiments related to stacked memory devices, such as DRAMs, SRAMs, EEPROMs, ReRAMs, and CAMs. For example, stack position identifiers (SPIDs) are assigned or otherwise determined, and are used by each memory device to make a number of adjustments. In one embodiment, a self-refresh rate of a DRAM is adjusted based on the SPID of that device. In another embodiment, a latency of a DRAM or SRAM is adjusted based on the SPID. In another embodiment, internal regulation signals are shared with other devices via TSVs. In another embodiment, adjustments to internally regulated signals are made based on the SPID of a particular device. In another embodiment, serially connected signals can be controlled based on a chip SPID (e.g., an even or odd stack position), and whether the signal is an upstream or a downstream type of signal.

Abstract: A memory cell includes a light emitting unit, a phosphorescent layer, a polarization filter and a light detecting unit. The light emitting unit selectively generates a first light signal in response to a write data. The phosphorescent layer generates a second light signal using an energy absorbed from the first light signal. The polarization filter either passes the second light signal to output the passed second light signal as a third light signal or blocks out the second light signal in response to the write data. The light detecting unit generates a read data by detecting the third light signal.

Abstract: Provided is a semiconductor package which includes: a semiconductor substrate; a functional element that is disposed on one surface of the semiconductor substrate; a protection substrate that is disposed in an opposite side of that surface of the semiconductor substrate with a predetermined gap from a surface of the semiconductor substrate; and a junction member that is disposed to surround the functional element and bonds the semiconductor substrate and the protection substrate together, wherein the functional element has a shape different from a shape of a plane surrounded by the junction member in that surface of the semiconductor substrate, or is disposed in a region deviated from a central region of the plane surrounded by the junction member in that surface of the semiconductor substrate.

Abstract: Optical memory comprising: a semiconductor wire, a first electrode, a second electrode, a light source, a means for producing a first voltage at the first electrode, a means for producing a second voltage at the second electrode, and a means for determining the presence of an electrical voltage across the first electrode and the second electrode exceeding a predefined voltage. The first voltage, preferably less than 0 volts, different from said second voltage. The semiconductor wire is optically transparent and has a bandgap less than the energy produced by the light source. The light source is optically connected to the semiconductor wire. The first electrode and the second electrode are electrically insulated from each other and said semiconductor wire.

Abstract: A memory device to which an electron beam is irradiated to store data therein is provided. The memory device includes a plurality of floating electrodes that store data through irradiation of the electron beam thereto, a charge amount detecting section that detects data stored in each of the floating electrodes based on a charge amount accumulated in each of the floating electrode.

Abstract: A micro-switching element provided with a first electrode 4 containing an ionic conductor and a second electrode 5 composed of an electric conductor, wherein the first electrode 4 and the second electrode 5 are physically and electrically connected to each other through deposition of a metal ion from the ionic conductor, and wherein a photoresponsive film 9 that receives light to generate a carrier is disposed between the first electrode 4 and the second electrode 5 to fill up the space between the electrodes. Accordingly, a micro-switching element is provided of which the characteristic fluctuation is small and which hardly produces a problem of operation failure.

Abstract: A memory cell includes a light emitting unit, a phosphorescent layer, a polarization filter and a light detecting unit. The light emitting unit selectively generates a first light signal in response to a write data. The phosphorescent layer generates a second light signal using an energy absorbed from the first light signal. The polarization filter either passes the second light signal to output the passed second light signal as a third light signal or blocks out the second light signal in response to the write data. The light detecting unit generates a read data by detecting the third light signal.

Abstract: According to one embodiment, a semiconductor memory device includes first and second upper-layer contact members. The upper-layer contact members are arranged alternately with the first upper-layer contact members in a first direction and shifted in a second direction orthogonal to the first direction. Plugs are formed on the second upper-layer contact members. First metal wirings are provided on the first upper-layer contact members. Second metal wirings are provided on the plugs. A height of a top surface of the plugs is higher than a top surface of the first metal wirings. A width of a bottom surface of the first metal wirings in a shorter-side direction is shorter than a width of a top surface of the first metal wirings. A width of a bottom surface of the second metal wirings in a shorter-side direction is shorter than a width of a top surface of the second metal wirings.

Abstract: A phase change memory device includes a silicon substrate including a plurality of active regions which extend in a first direction and are arranged at regular intervals in a second direction perpendicular to the first direction. Switching elements are formed in each active region of the silicon substrate and are spaced apart from one another. Phase change patterns are formed in the second direction and have the shape of lines in such that the phase change patterns connect side surfaces of pairs of switching elements which are placed adjacent to each other in a direction diagonal to the first direction.

Abstract: Data is stored in a quantum-well type structure with double gate control. According to an example embodiment, a transistor-based data storage circuit includes a gate, a back gate and a semiconductor channel between the gate and the back gate. Carriers are stored in a storage pocket structure in the channel, in response to biases applied to the gate and back gate. Current passing through the channel is sensed and used to detect the stored carriers and, correspondingly, a memory state of the storage circuit.

Abstract: A non-volatile programmable electro-optical element alters absorption characteristics of an optical medium that comprises a doped transition metal oxide material including F-centers. The F-centers are electrostatically moved into or out of the regions containing a wavefunction of an optical beam. A specific F-center profile in the transition metal oxide material may be programmed into the optical medium. The F-center profile alters an absorption profile within the optical medium. The spectral range for transmission of electromagnetic radiation in the optical medium may be tailored by the F-centers. Once the absorption profile is set by an electrical signal, the optical element maintains its state even when the electrical signal is turned off. Thus, the programming node may be disconnected from a power supply network, thereby enabling a low power operation of the electro-optical element. The inventive electro-optical element may be employed for both the visible and the infrared wavelength spectrum.

Abstract: A non-volatile memory is provided. The non-volatile memory comprises at least a silicon-on-insulator transistor including a substrate; an insulating layer disposed on the substrate; an active region disposed on the insulating layer; and an energy barrier device disposed in the active region and outputting a relatively small current when the non-volatile memory is read.

Abstract: A nonvolatile memory includes a memory cell including a first transistor and a second transistor. The first transistor includes a first channel, a first gate electrode, a first source electrode, and a first drain electrode. The second transistor includes a second channel made of oxide semiconductor material, a second gate electrode, a second source electrode, and a second drain electrode. One of the second source electrode and the second drain electrode is electrically connected to the first gate electrode. Data writing in the memory cell is done by raising the potential of a node between one of the second source electrode and the second drain electrode and the first gate electrode. Data erasure in the memory cell is done by irradiating the second channel with ultraviolet light and lowering the potential of the node.

Abstract: A capacitive operation method for quantum computing is disclosed where providing a sequence of write pulses above a threshold voltage induces a single charge population, forming a quantum dot (Q-dot). Determining if the single charge population was induced in the Q-dot occurs by monitoring capacitance changes while the writing is performed. Q-bits (Q-dot pairs) are formed without requiring a separate transistor for each Q-dot by multiplexing the calibration. A device which is able to perform the above method is also disclosed. The device utilizes the ability of cryogenic capacitance bridge circuits to measure the capacitance change caused by the introduction of a single charge population to a Q-dot. The device also permits swapping of Q-dot and Q-bit pairs utilizing a signal multiplexed with the voltage pulses that write (e.g. change the charge population) to the Q-dots.

Abstract: The method of and apparatus for testing a floating gate non-volatile memory semiconductor device comprising an array of cells including floating gates for storing data in the form of electrical charge. The method includes applying a test pattern of said electrical charge to the floating gates, exposing the device to energy to accelerate leakage of the electrical charges out of the cells, and subsequently comparing the remaining electrical charges in the cells to the test pattern. The energy is applied in the form of electromagnetic radiation of a wavelength such as to excite the charges in the floating gates to an energy level sufficient for accelerating charge loss from the floating gates of defective cells relative to charge loss from non-defective cells. The wavelength is preferably in the range of 440 to 560 nm.

Abstract: A multi-bit memory cell stores information corresponding to a high resistive state and multiple other resistive states lower than the high resistive state. A resistance of a memory element within the multi-bit memory cell switches from the high resistive state to one of the other multiple resistive states by applying a corresponding current to the memory element.

Abstract: A non-volatile programmable electro-optical element alters absorption characteristics of an optical medium that comprises a doped transition metal oxide material including F-centers. The F-centers are electrostatically moved into or out of the regions containing a wavefunction of an optical beam. A specific F-center profile in the transition metal oxide material may be programmed into the optical medium. The F-center profile alters an absorption profile within the optical medium. The spectral range for transmission of electromagnetic radiation in the optical medium may be tailored by the F-centers. Once the absorption profile is set by an electrical signal, the optical element maintains its state even when the electrical signal is turned off. Thus, the programming node may be disconnected from a power supply network, thereby enabling a low power operation of the electro-optical element. The inventive electro-optical element may be employed for both the visible and the infrared wavelength spectrum.

Abstract: General purpose methods for the fabrication of 5 integrated circuits from flexible membranes formed of very thin low stress dielectric materials, such as silicon dioxide or silicon nitride, and semiconductor layers. Semiconductor devices are formed in a semiconductor layer of the membrane. The semiconductor membrane layer is initially forced from a substrate of standard thickness, and all but a thin surface layer of the substrate is then etched or polished away. In another version, the flexible membrane is used as support and electrical interconnect for conventional integrated circuit die bonded thereto, with the interconnect formed in multiple layers in the membrane. Multiple die can be connected to one such membrane, which is then packaged as a multi-chip module. Other applications are based on (circuit) membrane processing for bipolar and MOSFET transistor fabrication, low impedance conductor interconnecting fabrication, flat panel displays, maskless (direct write) lithography, and 3D 1C fabrication.

Abstract: An array of non-volatile memory cells and a method for altering a state of a non-volatile memory cell that comprises multiple terminals, a substrate, and a charge retainer surrounded by an insulator, the method includes: illuminating the substrate with light such as to create electron-hole pairs within a first portion of the substrate positioned deep within the substrate and to create electron-hole pairs within a second portion of the substrate located near an upper surface of the substrate; and applying at least one control voltage to at least one terminal of the non-volatile memory cell such as to cause charged particles created in the first portion and in the second portion to propagate towards the upper surface of the substrate and to be injected into the charge retainer.

Abstract: N-V centers in diamond are created in a controlled manner. In one embodiment, a single crystal diamond is formed using a CVD process, and then annealed to remove N-V centers. A thin layer of single crystal diamond is then formed with a controlled number of N-V centers. The N-V centers form Qubits for use in electronic circuits. Masked and controlled ion implants, coupled with annealing are used in CVD formed diamond to create structures for both optical applications and nanoelectromechanical device formation. Waveguides may be formed optically coupled to the N-V centers and further coupled to sources and detectors of light to interact with the N-V centers.

Abstract: A memory cell device and method that includes a memory cell, and first and second write pulse signals. The memory cell has phase-change material capable of being set and capable of being reset. The first and second write pulse signals are used for a single reset operation of the memory cell. The first write pulse signal heats and melts a first portion of the phase-change material of the memory cell. The second write pulse signal heats and melts a second portion of the phase-change material of the memory cell.

Abstract: Memory devices in accordance with the present invention can comprise a molecular memory integrated circuit including a set of actuators capable of moving one or more platforms. In one embodiment the platforms can include either a memory device or a Molecular Array Read/Write Engine (MARE) with a cantilever system having at least one cantilever tip. When a first platform with a memory device is brought within close proximity of a second platform with a MARE, the actuators can position the cantilever tip to a specific location on the memory device. The tip of the cantilever can perform a number of functions to the memory device, including reading the state of the memory device or changing the state of the memory device. This description is not intended to be a complete description of, or limit the scope of, the invention.

Abstract: A resistance variable memory element and method for stabilizing the resistance variable memory element by providing a first and second electrode connected to a resistance variable material whereby the first and second electrodes comprise materials capable of providing a differential electrochemical potential across the resistance variable memory element which causes the resistance variable memory element to write to a predetermined “on” state. The resistance variable memory element is stabilized in a low resistance “on” state by the differential electrochemical potential. The first electrode preferably is a platinum electrode and the second electrode is preferably a silver electrode. The method and circuitry further includes a reverse refresh for stabilizing the resistance variable memory element in a high resistance state by applying a reverse voltage to the memory element.

Abstract: An optical memory device includes a plurality of optical memory cells, at least one wavelength filter, at least one read/write/erase filter, and a plurality of optical strands, wherein each optical memory cell stores and transmits data in optical form. The optical memory device interacts with an array of photon detectors, an array of lasers, and at least one central processing unit. A method of optically storing data in an optical memory device includes providing an optical memory device including a plurality of optical memory cells, at least one wavelength filter, at least one read/write/erase filter, and a plurality of optical strands; and storing and transmitting data in optical form in at least one of the plurality of optical memory cells.

Abstract: A reconfigurable and stationary element for the engineering of the wavefront of electromagnetic radiation. The element includes a phase change material that may be reversibly transformed between its crystalline and amorphous states. By forming a gradient in crystallinity, a phase taper may be stored in the phase change material of the instant element. The phase taper provides control of the phase angle of reflected or reradiated electromagnetic radiation. An incident wavefront of electromagnetic radiation interacts with the instant element and is reradiated with controlled propagation characteristics imposed by the stored phase taper. The instant element may provide non-specular reflection, beam steering, focusing, defocusing, symmetrical and asymmetrical cross section effects, and wavefront correction. In a preferred embodiment, a pattern of amorphous marks is formed within a crystalline matrix of phase change material.

Abstract: The data memory device has a plurality of memory cells for storing data which are represented by a first physical value of the storing memory elements, especially their conductivity or charge. The memory elements are, for example, storage capacitors. A detection device detects the first physical value representing the data and a second detection device is provided for detecting a second physical value of the storage cells or constituents of the same, especially of the storage element, especially the leakage current of the storage capacitor provided for storing the data. The second physical value represents a second detectable item of information in addition to the first physical value representing the data, independently of the first physical value. The invention also relates to a method for permanently storing information in storage cells of a data storage device for reversibly or permanently storing data.

Abstract: A novel encoding system, compositions for use therein and methods for determining the source, location and/or identity of a particular item or component of interest is provided. In particular, the present invention utilizes a collection of one or more sizes of populations of semiconductor nanocrystals having characteristic spectral emissions, to “track” the source or location of an item of interest or to identify a particular item of interest. The semiconductor nanocrystals used in the inventive compositions can be selected to emit a desired wavelength to produce a characteristic spectral emission in narrow spectral widths, and with a symmetric, nearly Gaussian line shape, by changing the composition and size of the semiconductor nanocrystal. Additionally, the intensity of the emission at a particular characteristic wavelength can also be varied, thus enabling the use of binary or higher order encoding schemes.

Abstract: A level of a solid state memory device includes main memory and address logic. The address logic is programmed by causing current to flow through an address element of the logic; and irradiating the address element so that the address element changes resistance states.

Abstract: High density, photon-gated persistent spectral holeburning is effectuated in rare earth doped II-VI compounds such as MgS, CaS, BaS and SrS. Two-photon ionization of rare earth ions is performed, selected by a narrow band laser, producing narrow regions of reduced absorption (optical holes) in the absorption spectrum of a rare earth ion. These holes are useful for such applications as high density memory (especially, high density re-writable or photo-erasable memory), spectral holographic memory, communication, etc., and demonstrate great survivability over reading cycles, thermal cycles and elevated temperatures. The embedment of the rare earth doped II-VI compound in a matrix comprising a polymeric material (such as PMMA), prior to the effectuation of the holeburning, may be advantageous for many embodiments. Inventive practice has successfully burned two hundred forty photon gated spectral holes in the zero phonon line (ZPL) of the 4f-5d transition of Eu2+ in a magnesium sulfide host.

Abstract: Addressable optical logic elements contain an optical memory substance, wherein, under the influence of an impressed magnetic, electromagnetic or electrical field or supplied energy, the memory substance can transfer from one physical or chemical state to a second physical or chemical state, wherein a physical or chemical state is assigned a specific logic value, and wherein a change in the logic element's physical or chemical state causes a change in the logic value and is implemented by the logic element being accessed and addressed magnetically, electromagnetically, electrically or optically for writing, reading, storing, erasing and switching of an assigned logic value.

Abstract: Spatially localized radiation, preferably ultraviolet visible radiation, representing information is impinged onto a spatially localized area of a heterostructure comprising a ternary Group III-V Nitride semiconductor material. It has been found that the spatially localized optical radiation reversibly changes the properties of the heterostructure comprising ternary Group III-V Nitride semiconductor material in the spatially localized area, to thereby provide an optical memory. The stored information can be read from the memory by impinging blanket radiation, preferably ultraviolet radiation of the same frequency which was used to write the information, onto the heterostructure comprising ternary Group III-V Nitride semiconductor material including onto the spatially localized area thereof.

Abstract: Abstract of the Disclosure: A process useful for information storage is described for the time-stable labeling of individual atoms or groups of atoms in the surface of a solid by locally removing individual atoms or group of atoms from the surface of a solid.

Abstract: An ultraviolet laser beam emitted from a laser beam source 1 is subjected to on/off control at an AOM 3, is linearly scanned at an equal speed by a polygon mirror 5 and an f.THETA. lens 6, is collected by an object lens 7, and is selectively spot-irradiated to a memory cell array of a semiconductor chip 8 on an XY stage 9 two-dimensionally moved by a control device 10 so as to write a pattern corresponding to desired data, whereby a custom ROM can be supplied in flexible production on a timely basis meeting market trends.

Abstract: A collective element of quantum boxes includes a plurality of the first quantum boxes (QD.sub.1) arranged within the first surface, between which conduction of electrons is allowed, a plurality of the second quantum boxes (QD.sub.2) arranged within the second surface corresponding to the plural first quantum boxes (QD.sub.1) between which conduction of electrons and holes is not substantially allowed, and a plurality of the third quantum boxes (QD.sub.3) arranged within the third surface corresponding to the plural second quantum boxes (QD.sub.2), between which conduction of holes is allowed.

Abstract: A method and apparatus for precision machining a surface suitable for use as a data recorder, using a scanning probe microscope (SPM) capable of observing an electrically insulating surface. The SPM includes a probe which comprises a tip having a pointed end, and also including a conductive layer applied on a surface of the tip. The tip is brought into close proximity to the surface which is to be machined and a machining voltage is applied between the tip and the surface to machine the surface.

Abstract: An intensity controlling circuit device can correct variation in intensity of light beams, due to tolerance occurred in each of a plurality of LED-array chips, emitted by LEDs provided in each of the LED-array chips. The intensity controlling circuit device is connected to at least one LED-array chip comprising a plurality of LEDs and slave transistors corresponding to each of the LEDs. The intensity controlling circuit device comprises an intensity controlling circuit connected to the respective LED-array chip. The intensity controlling circuit comprises a first transistor provided between a power source and a constant current generating unit so as to supply a current to the LED-array chip, and an intensity adjusting unit having a second transistor connected to the first transistor in parallel and a controlling unit for controlling the on/off state of the second transistor.

Abstract: A semiconductor optical memory device includes a semiconductor layer formed with a plurality of elemental recording areas each having a size generally equal to a wavelength of the optical beam. A plurality of quantized regions are formed in each elemental recording area of the semiconductor layer. Each of the quantized regions has a quantized energy level and absorbing an optical radiation of which wavelength is pertinent to the quantized energy level of that quantized region by forming first type carriers having a first polarity and second type carriers having a second, opposing polarity. Each of the quantized regions includes a semiconductor material confined in at least two mutually perpendicular directions to form the quantized energy level and has the optical absorption wavelength that is different from that of other quantized regions included in each elemental recording area.

Abstract: A quantum operational device includes a plurality of quantum boxes arranged in a plurality of stages isolated by a distance which permits tunnelling of electrons or holes through the distance, uses as bit information the presence or absence of an electron or a hole in each of the quantum boxes, and prohibits tunnelling of an electron or a hole from a quantum box in a stage to another quantum box in an adjacent stage when an electron or a hole exists in the quantum box in the adjacent stage. The device only needs quite low power, performs operation at a high speed, and can be fabricated by a simple manufacturing process.

Abstract: A recording-reproducing apparatus includes an electrode, a material that changes its intramolecular electron distribution upon the application of electromagnetic wave irradiation and an electric field provided on the electrode, and an electrically conductive probe having a pointed tip. The apparatus projects an electromagnetic wave onto the material, and applies a pulse voltage between the electrode and the conductive probe.

Abstract: An optical information storage apparatus includes an optical switch element and an optical fiber. The optical switch element receives an optical input and outputs an optical output only when the optical input is equal to or greater than a predetermined value. The optical fiber constitutes a first optical path. The optical fiber has at least one end face and receives an optical output emitted from the optical switch element through the at least one end face, guides the optical output, and emits an output beam, constituting the optical input, onto the optical switch element.