Abstract: A method for handling a fixed bound calibration data in an electronic device includes: determining, by the electronic device, a calibration data from a calibration setup; and generating and encoding, by the electronic device, a fixed bound calibration data based on the determined calibration data.

Abstract: An image sensor may be implemented using a stitched image sensor die. The stitched image sensor die may be formed from a step and repeat exposure process using a set of tiles in a reticle set. Multiple instantiations of a same circuitry block on a given tile may be patterned and formed on the image sensor die. The image sensor die may include circuitry configured to enable testing of one or more instantiations of the same circuitry block. The image sensor die may include memory circuitry for storing indications of a functional instantiation of the multiple instances and may use the functional instantiation for normal operation.

Abstract: A method of forming a radiation detector includes forming a stack including a plurality of arrays of radiation detection devices. Forming an array of the plurality of arrays includes forming a polysilicon layer over an interlayer dielectric layer of another array of the plurality of arrays; forming charge storage layers over the polysilicon layer; forming a second polysilicon layer over the charge storage layers; etching the second polysilicon layer to form gate stacks; and depositing an interlayer dielectric disposed on at least three sides of the gate stacks, the interlayer dielectric including a radiation reactive material.

Abstract: A display unit, a display substrate, a driving method of the display substrate and a display device are provided. The display unit includes a first electrode, a second electrode disposed above the first electrode, a functional layer disposed between the first electrode and the second electrode, and the functional layer includes a luminescent material with electrical bistable characteristics. The display unit is provided with the functional layer of the luminescent material with the electrical bistable characteristics, so that the display unit can emit light when being in a high conductivity state and still keep emitting light after being de-energized, and does not emit light when being in a low conductivity state, thereby realizing display and non-display of the display unit.

Abstract: An endoscope comprises a light splitting device for transmitting a first illuminating light and reflecting a second illuminating light emitted by a light source. The first illuminating light passes through a first color filter transmitting a first color. The second illuminating light passes through the second color filter transmitting a second color. The first color is different from the second color. The light splitting device combines a first incident light of the first color and a second incident light of the second color. The first incident light of the first color and the second incident light of the second color pass through an imaging lens and form images of the first color and the second color on an image sensor, respectively. A CFA (color filter array) comprising a plurality of first CFA components of the first color and a plurality of second CFA component of the second color covering the image sensor.

Abstract: A photo-detecting apparatus includes an optical-to-electric converter, having a first output terminal, configured to convert an incident light to an electrical signal; a cascode transistor, having a control terminal, a first channel terminal and a second channel terminal, wherein the second channel terminal of the cascode transistor is coupled to the first output terminal of the optical-to-electric converter; and a reset transistor, having a control terminal, a first channel terminal and a second channel terminal, wherein the first channel terminal of the reset transistor is coupled to a supply voltage and the second channel terminal of the reset transistor is coupled to the first channel terminal of the cascode transistor.

Abstract: An imaging device with low power consumption is provided. The pixel of the imaging device includes first and second photoelectric conversion elements, and first to fifth transistors. A cathode of the first photoelectric conversion element is electrically connected to the first transistor. An anode of a second photoelectric conversion element is electrically connected to the second transistor. Imaging data of a reference frame is obtained using the first photoelectric conversion element, and then imaging data of a difference detection frame is obtained using the second photoelectric conversion element. After the imaging data of the difference detection frame is obtained, a first potential that is a potential of a signal output from the pixel and a second potential that is a reference potential are compared. Whether or not there is a difference between the imaging data of the reference frame and the imaging data of the difference detection frame is determined using the first potential and the second potential.

Abstract: A bit vector for a Bloom filter is determined by performing one or more hash function operations on a set of ternary content addressable memory (TCAM) words. A TCAM array is partitioned into a first portion to store the bit vector for the Bloom filter and a second portion to store the set of TCAM words. The TCAM array can be searched using a search word by performing the one or more hash function operations on the search word to generate a hashed search word and determining whether bits at specified positions of the hashed search word match bits at corresponding positions of the bit vector stored in the first portion of the TCAM array before searching the second portion of the TCAM array with the search word.

Abstract: A non-volatile storage system is provided that includes a reversible resistance-switching memory cell and a controller coupled to the reversible resistance-switching memory cell. The controller is configured to program the reversible resistance-switching memory cell to three or more memory states while limiting the current through the memory cell to less than between about 0.1 microamp and about 30 microamps.

Abstract: A method is provided for operating a reversible resistance-switching memory cell. The method includes programming the reversible resistance-switching memory cell to three or more memory states while limiting the current through the memory cell to less than between about 0.1 microamp and about 30 microamps.

Abstract: A pillar-shaped memory cell is provided that includes a steering element, and a non-volatile state change element coupled in series with the steering element. Other aspects are also provided.

Abstract: A non-volatile memory cell includes a first electrode, a steering element, a metal oxide storage element located in series with the steering element, a dielectric resistor located in series with the steering element and the metal oxide storage element, and a second electrode.

Abstract: A non-volatile memory device includes first wiring structures elongated in a first direction and separated by a first gap region in a second direction, the first gap region comprising first dielectric material formed in a first process, second wiring structures elongated in a second direction and separated by a second gap region in a first direction, the second gap region comprising second dielectric material formed in a second process, and a resistive switching devices comprising active conductive material, resistive switching material, and a junction material, wherein resistive switching devices are formed at intersections of the first wiring structures and the second wiring structures, wherein the junction material comprising p+ polysilicon material overlying the first wiring material, wherein some resistive switching devices are separated by the first gap region and some resistive switching devices separated by the second gap region.

Abstract: A non-volatile memory device can include a word line that is operatively coupled to a non-volatile memory cell. A local bit line can be operatively coupled to the non-volatile memory cell. A discharge line that is associated with the local bit line can be configured to discharge the local bit line and a discharge diode can be electrically coupled between the local bit line and the discharge line.

Abstract: Memory arrays and associated methods of manufacturing are disclosed herein. In one embodiment, a memory array includes an access line extending along a first direction and a first contact line and a second contact line extending along a second direction different from the first direction. The first and second contact lines are generally parallel to each other. The memory array also includes a memory node that includes a first memory cell electrically connected between the access line and the first contact line to form a first circuit, and a second memory cell electrically connected between the access line and the second contact line to form a second circuit different from the first circuit.

Abstract: An optically controlled read only memory is disclosed. The optically controlled read only memory includes a substrate, a plurality of memory cells having optical sensors disposed on the substrate, and at least one shielding structure disposed on the optical sensor, in which the shielding structure selectively shields a portion of the optical sensor according to a predetermined layout. Preferably, the optically controlled read only memory of the present invention is capable of providing two types or more program codes and outputting different program codes carrying different function under different lighting condition.

Abstract: Methods involve using a memory array having memory cells comprising a diode and an antifuse, in which the antifuse is made smaller and programmed at lower voltage by using an antifuse material having a higher dielectric constant and a higher acceleration factor than those of silicon dioxide, and in which the diode is made of a material having a lower band gap than that of silicon. Such memory arrays can be made to have long operating lifetimes by using the high acceleration factor and lower band gap materials. Antifuse materials having dielectric constants between 5 and 27, for example, hafnium silicon oxynitride or hafnium silicon oxide, are particularly effective. Diode materials with band gaps lower than that of silicon, such as germanium or a silicon-germanium alloy, are particularly effective.

Abstract: Provided is a semiconductor package which includes: a semiconductor substrate; a functional element that is disposed on one surface of the semiconductor substrate; a protection substrate that is disposed in an opposite side of that surface of the semiconductor substrate with a predetermined gap from a surface of the semiconductor substrate; and a junction member that is disposed to surround the functional element and bonds the semiconductor substrate and the protection substrate together, wherein the functional element has a shape different from a shape of a plane surrounded by the junction member in that surface of the semiconductor substrate, or is disposed in a region deviated from a central region of the plane surrounded by the junction member in that surface of the semiconductor substrate.

Abstract: A memory cell is provided that includes a steering element, and a non-volatile state change element coupled in series with the steering element. The steering element and state change element are disposed in a vertically-oriented pillar. Other aspects are also provided.

Abstract: The invention contained herein provides electrical circuits and driving methods to operate a memory cell comprising a capacitance coupled to a breakover conduction switch such as a thyristor, DIAC or one or more complementary transistor pairs. The memory cell comprises a cell capacitance for storing a memory state and for capacitively coupling an applied voltage to the switch. During operation, pulses are applied to write, read or maintain the cell's memory state. An illumination cell comprises an LED, OLED or electroluminescent material in series with each memory cell. Breakover conduction charge passes through the switch and the emissive element to charge the cell capacitance. A memory array of breakover conduction memory cells may be organized into rows and columns for reading and writing an addressable array memory cells. An organic light emitting display memory array may be fabricated using organic light emitting devices and/or materials.

Abstract: A random access memory circuit includes a plurality of pixels, each having a light sensitive area and a light blocking layer arranged over at least each of the light sensitive areas. In an alternative embodiment, the circuit includes a plurality of memory elements for storing data. Each memory element may comprise a bit node formed between a photodiode, having a light arranged over the photodiode, and a switching element, where data may be stored. The circuit may also include a plurality of reading and writing circuits for reading and writing data to and from the memory cells.

Abstract: Non-volatile magnetic random access memory (MRAM) devices that include magnetic flip-flop structures that include a magnetization controlling structure; a first tunnel barrier structure; and a magnetization controllable structure that includes a first polarizing layer; and a first stabilizing layer, wherein the first tunnel barrier structure is between the magnetization controllable structure and the magnetization controlling structure and the first polarizing layer is between the first stabilizing layer and the first tunnel barrier structure, wherein the magnetic flip-flop device has two stable overall magnetic; configurations a second tunnel barrier structure and a reference layer, wherein the second tunnel barrier structure is between the magnetic flip-flop device and the reference layer.

Abstract: A Phase Change Memory device with reduced programming disturbance and its operation are described. The Phase Change Memory includes an array with word lines and bit lines and voltage controlling elements coupled to bit lines adjacent to an addressed bit line to maintain the voltage of the adjacent bit lines within an allowed range.

Abstract: A memory cell device includes a semiconductor nanowire extending, at a first end thereof, from a substrate; the nanowire having a doping profile so as to define a field effect transistor (FET) adjacent the first end, the FET further including a gate electrode at least partially surrounding the nanowire, the doping profile further defining a p-n junction in series with the FET, the p-n junction adjacent a second end of the nanowire; and a phase change material at least partially surrounding the nanowire, at a location corresponding to the p-n junction.

Abstract: A memory cell is provided that includes a first conductor, a second conductor, a steering element that is capable of providing substantially unidirectional current flow, and a state change element coupled in series with the steering element. The state change element is capable of retaining a programmed state, and the steering element and state change element are vertically aligned with one another. Other aspects are also provided.

Abstract: Embodiments disclosed include memory cell operating methods, memory cell programming methods, memory cell reading methods, memory cells, and memory devices. In one embodiment, a memory cell includes a wordline, a first bitline, a second bitline, and a memory element. The memory element is electrically connected to the wordline and selectively electrically connected to the first bitline and the second bitline. The memory element stores information via a resistive state of the memory element. The memory cell is configured to convey the resistive state of the memory element via either a first current flowing from the first bitline through the memory element to the wordline or a second current flowing from the wordline through the memory element to the second bitline.

Abstract: A method of forming a diode comprises the steps of forming an extraction region of a first conductivity type, forming an active region of a second conductivity type that is opposite the first conductivity type, and forming an exclusion region of the second conductivity type to be adjacent the active region. The active region is formed to be adjacent to the extraction region and along a reverse bias path of the extraction region and the exclusion region does not resupply minority carriers while removing majority carriers. At least one of the steps of forming the exclusion region and forming the extraction region includes the additional step of forming a barrier that substantially reduces the flow of the carriers that flow toward the active region, but does not rely on a diffusion length of the carriers to block the carriers.

Abstract: A ferroelectric memory of an embodiment of the present invention includes m platelines arranged in a first interconnect layer (m is a positive integer), n bitlines arranged in a second interconnect layer (n is a positive integer), and m×n memory cells arranged at m×n intersection points of the m platelines and the n bitlines, each of the m×n memory cells including a ferroelectric capacitor and a zener diode connected in series between any one of the m platelines and any one of the n bitlines.

Abstract: One aspect of this disclosure relates to a memory cell. In various embodiments, the memory cell includes an access transistor having a floating node, and a diode connected between the floating node and a diode reference potential line. The diode includes an anode, a cathode, and an intrinsic region between the anode and the cathode. A charge representative of a memory state of the memory cell is held across the intrinsic region of the diode. In various embodiments, the memory cell is implemented in bulk semiconductor technology. In various embodiments, the memory cell is implemented in semiconductor-on-insulator technology. In various embodiments, the diode is gate-controlled. In various embodiments, the diode is charge enhanced by an intentionally generated charge in a floating body of an SOI access transistor. Various embodiments include laterally-oriented diodes (stacked and planar configurations), and various embodiments include vertically-oriented diodes.

Abstract: Non-volatile magnetic random access memory (MRAM) devices that include magnetic flip-flop structures that include a magnetization controlling structure; a first tunnel barrier structure; and a magnetization controllable structure that includes a first polarizing layer; and a first stabilizing layer, wherein the first tunnel barrier structure is between the magnetization controllable structure and the magnetization controlling structure and the first polarizing layer is between the first stabilizing layer and the first tunnel barrier structure, wherein the magnetic flip-flop device has two stable overall magnetic configurations, and wherein a first unipolar current applied to the device will cause the orientation of the magnetization controlling structure to reverse its orientation and a second unipolar current applied to the electronic device will cause the magnetization controllable structure to switch its magnetization so that the device reaches one of the two stable overall magnetic configurations, wherein

Abstract: A memory architecture that employs one or more semiconductor PIN diodes is provided. The memory employs a substrate that includes a buried bit/word line and a PIN diode. The PIN diode includes a non-intrinsic semiconductor region, a portion of the bit/word line, and an intrinsic semiconductor region positioned between the non-intrinsic region and the portion of the bit/word line.

Abstract: In some aspects, a method of forming a memory circuit is provided that includes (1) forming a two-terminal memory element on a substrate between a gate layer and a first metal layer of the memory circuit; and (2) forming a CMOS transistor on the substrate, the CMOS transistor for programming the two-terminal memory element. Numerous other aspects are provided.

Abstract: In some aspects, a memory circuit is provided that includes (1) a two-terminal memory element formed on a substrate; and (2) a CMOS transistor formed on the substrate and adapted to program the two-terminal memory element. The two-terminal memory element is formed between a gate layer and a first metal layer of the memory circuit. Numerous other aspects are provided.

Abstract: The present invention relates to a method of programming an array of memory cells such as phase change memory cells. In this method, a selection is made between a first pulse configuration and a second pulse configuration, wherein the first and second pulse configurations are different, and wherein each pulse configuration can write at least two data states to the memory cells of the array.

Abstract: The present invention provides a method of reading data from a non-volatile memory device including word lines and bit lines that intersect each other and electrically rewritable memory cells that are arranged at intersections of the word lines and the bit lines and that respectively have variable resistive elements nonvolatily storing a resistances as data. The method includes: precharging a selected word line and unselected word lines to a first word line voltage and a selected bit line and unselected bit lines to a first bit line voltage; and reading data from a memory cell connected to the selected word line and the selected bit line by changing the voltage of the selected word line from the first word line voltage to a second word line voltage and changing the voltage of the selected bit line from the first bit line voltage to a second bit line voltage after the precharging.

Abstract: A photosensitive diode has an active region defining a majority carrier of a first conductivity type and a minority carrier of a second conductivity type. An extraction region is disposed on a first side of the active region and extracts minority carriers from the active region. It also has majority carriers within the extraction region flowing toward the active region in a condition of reverse bias. An exclusion region is disposed on a second side of the active region and has minority carriers within the exclusion region flowing toward the active region. It receives majority carriers from the active region. At least one of the extraction and exclusion region provides a barrier for substantially reducing flow of one of the majority carriers or the minority carriers, whichever is flowing toward the active region, while permitting flow of the other minority carriers or majority carriers flowing out of the active region.

Abstract: Embodiments disclosed include memory cell operating methods, memory cell programming methods, memory cell reading methods, memory cells, and memory devices. In one embodiment, a memory cell includes a wordline, a first bitline, a second bitline, and a memory element. The memory element is electrically connected to the wordline and selectively electrically connected to the first bitline and the second bitline. The memory element stores information via a resistive state of the memory element. The memory cell is configured to convey the resistive state of the memory element via either a first current flowing from the first bitline through the memory element to the wordline or a second current flowing from the wordline through the memory element to the second bitline.

Abstract: A memory operable at a high speed is obtained. This memory comprises a plurality of word lines, first transistors each connected to each the plurality of word lines for entering an ON-state through selection of the corresponding word line, a plurality of memory cells including diodes having cathodes connected to the source or drain regions of the first transistors respectively and a data determination portion connected to the drain or source regions of the first transistors for determining data read from a selected memory cell.

Abstract: A content-addressable memory (“CAM”) architecture and method for reducing power consumption thereof are described. A CAM cell array includes CAM cells, each of which includes two thyristor-based storage elements. Each thyristor-based storage element of the CAM cells has a control gate, an anode, and a cathode for providing control gates, anodes, and cathodes of the CAM cells. The CAM cell array further includes matchlines directly coupled to the cathodes of the CAM cells; searchlines directly coupled to the anodes of the CAM cell; and gatelines coupled to the control gates of the CAM cells.

Abstract: A random access memory circuit includes a plurality of pixels, each having a light sensitive area and a light blocking layer arranged over at least each of the light sensitive areas. In an alternative embodiment, the circuit includes a plurality of memory elements for storing data. Each memory element may comprise a bit node formed between a photodiode, having a light arranged over the photodiode, and a switching element, where data may be stored. The circuit may also include a plurality of reading and writing circuits for reading and writing data to and from the memory cells.

Abstract: A memory cell embodiment includes an access transistor having a floating node, and a diode connected between the floating node and a diode reference potential line. The diode includes an anode, a cathode, and an intrinsic region between the anode and the cathode. A charge representative of a memory state of the memory cell is held across the intrinsic region of the diode.

Abstract: A high performance memory based computation system comprises an array of memory cells. Each memory cell stores a logic data corresponding to a chosen combination of inputs based on a specific logic function. For improved performance, the memory cell array can be divided into sub-blocks; and the sub-blocks can be serially disposed or juxtaposed. The performance of the memory based computation system can further be improved by removing the repeated memory cell rows, column, and/or sub-arrays.

Abstract: Systems and methodologies are provided for forming a diode component integral with a memory cell to facilitate programming arrays of memory cells created therefrom. Such a diode component can be part of a PN junction of memory cell having a passive and active layer with asymmetric semiconducting properties. Such an arrangement reduces a number of transistor-type voltage controls and associated power consumption, while enabling individual memory cell programming as part of a passive array. Moreover, the system provides for an efficient placement of memory cells on a wafer surface, and increases an amount of die space available for circuit design.

Abstract: A memory capable of reducing the memory cell size is provided. This memory includes a plurality of memory cells including diodes, a plurality of bit lines and a first conductive type first impurity region arranged to intersect with the bit lines for functioning as first electrodes of the diodes included in the memory cells and a word line. The first impurity region is divided every bit line group formed by a prescribed number of bit lines along a direction intersecting with the extensional direction of the first impurity region.

Abstract: An integrated circuit and associated method of programming are provided. Such integrated circuit includes a memory cell with a diode and an antifuse in communication with the diode. The antifuse is constructed to include a high-K dielectric material with a K greater than 3.9. Further, the memory cell is programmed utilizing a programming pulse that reverse biases the diode thereof.

Abstract: Disclosed are a composition comprising a mixture of at least one iridium organometallic compound and an electrically conductive polymer, an organic active layer comprising the same, an organic memory device comprising the organic active layer and methods for fabricating the same. The organic memory device may include a first electrode, a second electrode and the organic active layer between the first and second electrodes. The organic memory device possesses the advantages of rapid switching time, decreased operating voltage, decreased fabrication costs, increased reliability and improved non-volatility.

Abstract: A memory array includes first and second sets of conductors and a plurality of memory-diodes, each connecting in a forward direction a conductor of the first set with a conductor of the second set. An electrical potential is applied across a selected memory-diode, from higher to lower potential in the forward direction, intended to program the selected memory-diode. During this intended programming, each other memory-diode in the array has provided thereacross in the forward direction thereof an electrical potential lower than its threshold voltage. The threshold voltage of each memory-diode can be established by applying an electrical potential across that memory-diode from higher to lower potential in the reverse direction. By so establishing a sufficient threshold voltage, and by selecting appropriate electrical potentials applied to conductors of the array, problems related to current leakage and disturb are avoided.

Abstract: A method of driving a multi-state organic memory device which includes an organic memory layer between upper and lower electrodes. The method comprises continuously applying voltages having different polarities to conduct switching into a low resistance state, and applying a single pulse to conduct switching into a high resistance state. A multi-state memory is realized using one memory device, since it is possible to gain three or more resistance states, thus significantly improving integration. The method has excellent reproducibility, and the resistance state induced by multiple pulses has an excellent nonvolatile characteristic.

Abstract: The present memory device includes first and second electrodes, an active layer; and a passive layer, the active and passive layers being between the first and second electrodes, with at least one of the active layer and passive layer being a doped a sol-gel.

Abstract: A read-only data storage and retrieval device is presented having no moving parts and requiring very low power. Addressing can be accomplished sequentially where the address increments automatically or can be accomplished randomly. High density storage is achieved through the use of a highly symmetric diode matrix that is addressed in both coordinate directions; its symmetry makes the Dual-addressed Rectifier Storage (DRS) Array very scaleable scalable, particularly when made as an integrated circuit. For even greater storage flexibility, multiple digital rectifier storage arrays can be incorporated into the device, one or more of which can be made removable and interchangeable.