Abstract: Disclosed herein are related to a system and a method of extending a lifetime of a memory cell. In one aspect, a memory controller applies a first pulse having a first amplitude to the memory cell to write input data to the memory cell. In one aspect, the memory controller applies a second pulse having a second amplitude larger than the first amplitude to the memory cell to extend a lifetime of the memory cell. The memory cell may include a resistive memory device or a phase change random access memory device. In one aspect, the memory controller applies the second pulse to the memory cell to repair the memory cell in response to determining that the memory cell has failed. In one aspect, the memory controller periodically applies the second pulse to the memory cell to extend the lifetime of the memory cell before the memory cell fails.

Abstract: A filament forming method includes: performing first stage to apply first bias including gate and drain voltages to a resistive memory unit plural times until read current reaches first saturating state, latching read current in first saturating state as saturating read current, determining whether rate of increase of saturating read current is less than first threshold value; when rate of increase of saturating read current is not less than first threshold value, performing second stage to apply second bias, by increasing gate voltage and decreasing drain voltage, to the resistive memory unit plural times until read current reaches second saturating state, latching read current in second saturating state as saturating read current and determining whether rate of increase of saturating read current is less than first threshold value; finishing the method when rate of increase of saturating read current is less than first threshold value and saturating read current reaches target current value.

Abstract: A chip includes a first circuitry and a second circuitry. The first circuitry includes first circuits which have first power consumption at a point of time. The second circuitry includes second circuits which have second power consumption at the point of time, and the first power consumption is higher than the second power consumption. At least one of the first circuits and at least one the second circuits are alternately arranged, in order to lower an operating temperature of the plurality of first circuits at the point of time.

Abstract: A memory device includes a memory cell array including a plurality of memory cells, each of the plurality of memory cells having a switch element, and a data storage element connected to the switch element and containing a phis change material; and a memory controller for obtaining first read voltages from the plurality of memory cells, inputting a first write current to the plurality of memory cells, and then, obtaining second read voltages from the plurality of memory cells, wherein the memory controller compares the first read voltage of a first memory cell of the plurality of memory cells to the second read voltage of the first memory cell to determine a state of the first memory cell.

Abstract: A resistive memory device includes: conductive layers and interlayer insulating layers, which are alternatively stacked; a vertical hole vertically penetrating the conductive layers and the interlayer insulating layers; a gate insulating layer disposed over an inner wall of the vertical hole; a charge trap layer disposed over an inner wall of the gate insulating layer; a channel layer disposed over an inner wall of the charge trap layer; and a variable resistance layer disposed over an inner wall of the channel layer.

Abstract: One aspect of this description relates to a memory array. In some embodiments, the memory array includes a first memory cell coupled between a first local select line and a first local bit line, a second memory cell coupled between a second local select line and a second local bit line, a first switch coupled to a global bit line, a second switch coupled between the first local bit line and the first switch, and a third switch coupled between the second local select line and the first switch.

Abstract: According to one embodiment, a memory device includes a first wiring line, a second wiring line, a memory cell connected between the first and second wiring lines, including a resistance change memory element having first and second resistance states, and a two-terminal switching element connected in series to the resistance change memory element, and a voltage application circuit which applies a write voltage signal having a first polarity and setting a desired resistance state to the resistance change memory element, to the memory cell, and applies, after the write voltage signal is applied to the memory cell, a second polarity voltage signal having a magnitude that prevents the two-terminal switching element from being set to the on-state, to the memory cell.

Abstract: The invention is notably directed to a device for performing a matrix-vector multiplication of a matrix with a vector. The device comprises a memory crossbar array comprising a plurality of row lines, a plurality of column lines and a plurality of junctions arranged between the plurality of row lines and the plurality of column lines. Each junction comprises a programmable resistive element and an access element for accessing the programmable resistive element. The device further comprises a readout circuit configured to perform read operations by applying positive read voltages of one or more first amplitudes and negative read voltages of one or more second amplitudes corresponding to the one or more first amplitudes. The one or more first amplitudes and the corresponding one or more second amplitudes are different from each other, thereby correcting polarity dependent current asymmetricities.

Abstract: A memory may include a first wafer, and a second wafer stacked on and bonded to the first wafer. The first wafer may include a cell structure including a memory cell array; and a first logic structure disposed under the cell structure, and including a row control circuit. The second wafer may include a second logic structure including a column control circuit.

Abstract: A resistive memory device includes word lines, first memory cells, second memory cells, bit lines, source lines, and a driver. The driver provides a forming voltage to the first memory cells and the second memory cells through the bit lines and the source lines in a forming process. A first connection length along the bit lines and the source lines between the first memory cells and the driver is longer than a second connection length along the bit lines and the source lines between the second memory cells and the driver. The forming process is performed to the first memory cells before the forming process is performed to the second memory cells. A first value of the forming voltage provided to the first memory cells is less than a second value of the forming voltage provided to the second memory cells.

Abstract: A memory architecture includes: a plurality of cell arrays each of which comprises a plurality of bit cells, wherein each of bit cells of the plurality of cell arrays uses a respective variable resistance dielectric layer to transition between first and second logic states; and a control logic circuit, coupled to the plurality of cell arrays, and configured to cause a first information bit to be written into respective bit cells of a pair of cell arrays as an original logic state of the first information bit and a logically complementary logic state of the first information bit, wherein the respective variable resistance dielectric layers are formed by using a same recipe of deposition equipment and have different diameters.

Abstract: A memory device includes a first chip, a second chip and a processor. The second chip is coupled to the first chip at a first node. The second chip includes a first capacitor and a first variable resistor. The first capacitor is coupled to the first node. The first variable resistor is coupled in series with the first capacitor. The processor is coupled to the first node, and is configured to perform a first read operation to the first chip via the first node. A method for operating a memory device is also disclosed herein.

Abstract: An analog neuromorphic circuit is disclosed, having input voltages applied to a plurality of inputs of the analog neuromorphic circuit. The circuit also includes a plurality of resistive memories that provide a resistance to each input voltage applied to each of the inputs so that each input voltage is multiplied in parallel by the corresponding resistance of each corresponding resistive memory to generate a corresponding current for each input voltage and each corresponding current is added in parallel. The circuit also includes at least one output signal that is generated from each of the input voltages multiplied in parallel with each of the corresponding currents for each of the input voltages added in parallel. The multiplying of each input voltage with each corresponding resistance is executed simultaneously with adding each corresponding current for each input voltage.

Abstract: A method for reducing noise in a read signal due attributable to read element asymmetry provides for transmitting a write signal through a write precompensation circuit that shifts rising edges and falling edges of each of pulse in the write signal by a select magnitude and in opposite directions. After the write signal is encoded on a media, a corresponding read signal is read, with a read element, from the media. The method further provides for transmitting the read signal through a magnetoresistive asymmetry compensation (MRAC) block that is tuned to correct second-order non-linearities characterized by a particular set of distortion signatures. The select magnitude of the waveform shift applied by the write precompensation circuit introduces a non-linear signal characteristic that combines with non-linear signal characteristics introduced by the read element to generate one of the particular distortion signatures that is correctable by the MRAC block.

Abstract: A method includes forming a bottom electrode, forming a dielectric layer, forming a Phase-Change Random Access Memory (PCRAM) region in contact with the dielectric layer, and forming a top electrode. The dielectric layer and the PCRAM region are between the bottom electrode and the top electrode. A filament is formed in the dielectric layer. The filament is in contact with the dielectric layer.

Abstract: A memory system according to an embodiment includes a first wiring, a second wiring, a memory cell between the first wiring and the second wiring and a controller. The memory cell includes a variable resistance element and a switching element. The variable resistance element is switchable between a first low-resistance state and a first high-resistance state. The switching element is switchable between a second low-resistance state and a second high-resistance state in accordance with a supplied voltage. The controller is configured to supply the first wiring with a first voltage switching the switching element to the second low-resistance state, supply the first wiring with a second voltage switching the switching element from the second low-resistance state to the second high-resistance state after the first voltage is supplied, and detect a first target voltage of the second wiring after the second voltage is supplied.

Abstract: The disclosed technology relates to a non-volatile (NV) static random-access memory (SRAM) device, and to a method of operating the same. The NV-SRAM device includes a plurality of bit-cells, wherein each bit-cell comprises: an SRAM bit-cell; a first bit-line connected via a first access element to the SRAM bit-cell; a NV bit-cell connected via a switch to the SRAM bit-cell; and a second bit-line connected via a second access element to the NV bit-cell. The NV-SRAM device is configured to independently write data from the first bit-line into the SRAM bit-cell through the first access element, and respectively from the second bit-line into the NV bit-cell through the second access element.

Abstract: A memory device includes a memory array, a reference voltage generator and a driver circuit. The memory array includes a memory cell. The reference voltage generator is configured to generate a reference voltage based on a threshold voltage of a select transistor of the memory cell. The driver circuit is coupled to the reference voltage generator and is configured to generate at least one of a bit line voltage and a word line voltage according to the reference voltage, wherein the memory cell is driven by the at least one of the bit line voltage or the word line voltage, and the reference voltage generator comprises a resistor that is configured to sense the threshold voltage of the select transistor through a current flowing through the resistor.

Abstract: The present disclosure includes apparatuses, methods, and systems for memory cell programming that cancels threshold voltage drift. An embodiment includes a memory having a plurality of memory cells, and circuitry configured to program a memory cell of the plurality of memory cells to one of two possible data states by applying a first voltage pulse to the memory cell, wherein the first voltage pulse has a first polarity and a first magnitude, and applying a second voltage pulse to the memory cell, wherein the second voltage pulse has a second polarity that is opposite the first polarity and a second magnitude that can be greater than the first magnitude.

Abstract: In some embodiments, the present disclosure provides systems and methods for detecting malware, including receiving thermal images of an integrated circuit, and generating a power density profile using at least one of the thermal images. The present disclosure further includes comparing the power density profile to an expected power density profile of the integrated circuit, and determining, based on the comparison, if the integrated circuit is in an abnormal operating state.

Abstract: The present disclosure includes apparatuses, methods, and systems for using an average reference voltage for sensing memory. An embodiment includes a memory having a plurality of memory cells coupled to a common node driver, where a group of the memory cells are coupled to an access line and each respective memory cell of the group is coupled to a different respective sense line, sense circuitry coupled to the different respective sense lines, and circuitry configured to apply an average reference voltage from the common node driver to the sense circuitry during a sense operation being performed on the group of memory cells coupled to the access line.

Abstract: Memory programming methods and memory systems are described. One example memory programming method includes programming a plurality of main cells of a main memory and erasing a plurality of second main cells of the main memory. The memory programming method further includes first re-writing one-time programmed data within a plurality of first one-time programmed cells of a one-time programmed memory during the programming and second re-writing one-time programmed data within a plurality of second one-time programmed cells of a one-time programmed memory during the erasing. Additional method and apparatus are described.

Abstract: The graphics processing unit (GPU) of a processing system transitions to a low-power state between frame rendering operations according to an inter-frame power off process, where GPU state information is stored on retention hardware. The retention hardware can include retention random access memory (RAM) or retention flip-flops. The retention hardware is operable in an active mode and a retention mode, where read/write operations are enabled at the retention hardware in the active mode and disabled in the retention mode, but data stored on the retention hardware is still retained in the retention mode. The retention hardware is placed in the retention state between frame rendering operations. The GPU transitions from its low-power state to its active state upon receiving an indication that a new frame is ready to be rendered and is restored using the GPU state information stored at the retention hardware.

Abstract: A semiconductor device is provided. The semiconductor device includes a resistive memory device, and at least a first photodetector and a second photodetector positioned adjacent to the resistive memory device to allow for measurement of the intensity of photon emission from a filament of the resistive memory device.

Abstract: A memory device includes a bit line, a word line, a memory cell, select bit lines, and a controller. The memory cell includes a first transistor, data storage elements, and second transistors corresponding to the data storage elements. The first transistor includes a gate electrically coupled to the word line, a first source/drain, and a second source/drain. Each of the select bit lines is electrically coupled to a gate of a corresponding second transistor. Each data storage element and the corresponding second transistor are electrically coupled in series between the first source/drain of the first transistor and the bit line. The controller turns ON the first transistor and a selected second transistor, and, while the first transistor and the selected second transistor are turned ON, applies different voltages to the bit line to perform corresponding different operations on the data storage element coupled to the selected second transistor.

Abstract: A crossbar array includes a number of memory elements. An analog-to-digital converter (ADC) is electronically coupled to the vector output register. A digital-to-analog converter (DAC) is electronically coupled to the vector input register. A processor is electronically coupled to the ADC and to the DAC. The processor may be configured to determine whether division of input vector data by output vector data from the crossbar array is within a threshold value, and if not within the threshold value, determine changed data values as between the output vector data and the input vector data, and write the changed data values to the memory elements of the crossbar array.

Abstract: Methods, systems, and devices for parallel drift cancellation are described. In some instances, during a first duration, a first voltage may be applied to a word line to threshold one or more memory cells included in a first subset of memory cells. During a second duration, a second voltage may be applied to the word line to write a first logic state to one or more memory cells included in the first subset and to threshold one or more memory cells included in a second subset of memory cells. During a third duration, a third voltage may be applied to the word line to write a second logic state to one or more memory cells included in the second subset of memory cells.

Abstract: Devices, systems and methods for adaptively controlling a reset current of a memory cell are described. A system comprises: a mirror circuit with one branch coupled with a top electrode of the memory cell and the other branch coupled with one end of a resistive reference, and wherein a bottom electrode of the memory cell is coupled to a reference potential, the other end of the resistive reference is provided with a first electric potential; a control circuit; and a feedback circuit for feeding an electric potential to the top electrode of the memory cell.

Abstract: In some embodiments, the present disclosure relates a phase change random access memory device that includes a phase change material (PCM) layer disposed between bottom and top electrodes. A controller circuit is coupled to the bottom and top electrodes and is configured to perform a first reset operation by applying a signal at a first amplitude across the PCM layer for a first time period and decreasing the signal from the first amplitude to a second amplitude for a second time period; and to perform a second reset operation by applying the signal at a third amplitude across the PCM layer for a third time period and decreasing the signal from the third amplitude to a fourth amplitude for a fourth time period greater than the second time period. After the fourth time period, the PCM layer has a percent crystallinity greater than the PCM layer after the second time period.

Abstract: A chalcogen compound layer exhibiting ovonic threshold switching characteristics, a switching device, a semiconductor device, and/or a semiconductor apparatus including the same are provided. The switching device and/or the semiconductor device may include two or more chalcogen compound layers having different energy band gaps. Alternatively, the switching device and/or semiconductor device may include a chalcogen compound layer having a concentration gradient of an element of boron (B), aluminum (Al), scandium (Sc), manganese (Mn), strontium (Sr), and/or indium (In) in a thickness direction thereof. The switching device and/or a semiconductor device may exhibit stable switching characteristics while having a low off-current value (leakage current value).

Abstract: Systems, apparatuses, and methods related to extended memory communication subsystems for performing extended memory operations are described. An example method can include receiving, at a processing unit that is coupled between a host device and a non-volatile memory device, signaling indicative of a plurality of operations to be performed on data written to or read from the non-volatile memory device. The method can further include performing, at the processing unit, at least one operation of the plurality of operations in response to the signaling. The method can further include accessing a portion of a memory array in the non-volatile memory device. The method can further include transmitting additional signaling indicative of a command to perform one or more additional operations of the plurality of operations on the data written to or read from the non-volatile memory device.

Abstract: A phase change memory device is provided. The phase change memory device includes a phase change memory material within an electrically insulating wall, a first heater terminal in the electrically insulating wall, and two read terminals in the electrically insulating wall.

Abstract: A semiconductor device includes a first level having a plurality of transistor devices, and a first wiring level positioned over the first level. The first wiring level includes a plurality of conductive lines extending parallel to the first level, a plurality of conductive vertical interconnects extending perpendicular to the first level, and one or more programmable vertical interconnects that extend perpendicular to the first level and include a programmable material having a modifiable resistivity in that the one or more programmable vertical interconnects change between being conductive and being non-conductive according to a current pattern.

Abstract: Provided herein may be a resistive memory device and a method of operating the resistive memory device. The resistive memory device may include strings coupled between one or more source lines and one or more bit lines, each string including a set of one or more resistive memory cells, one or more word lines respectively coupled to the set of one or more resistive memory cells; and a voltage generator configured to control a level of a turn-on voltage to be applied to one or more unselected word lines among the one or more word lines depending on a program target state of a subset of resistive memory cells including one or more resistive memory cells selected from among the set of one or more resistive memory cells.

Abstract: A semiconductor device may include a word line, a bit line crossing the word line, and a memory cell coupled to the word line and the bit line to receive an electrical signal to control the memory cell and including a switching material layer and an oxidation-reduction reversible material layer that is in contact with the switching material layer to allow for either oxidation reaction or reduction reaction to occur in response to different amplitudes and different polarities of the electrical signal, wherein the oxidation-reduction reversible material layer and the switching material layer responds to a first threshold voltage and a first polarity of the electrical signal to generate an oxidation interface between the switching material layer and the oxidation-reduction reversible material layer, and responds to a second threshold voltage and a second polarity of the electrical signal to reduce the generation of the oxidation interface.

Abstract: The present disclosure generally relates to multi-switch storage cells (MSSCs), three-dimensional MSSC arrays, and three-dimensional MSSC memory. Multi-switch storage cells include a cell select device, multiple resistive change elements, and an intracell wiring electrically connecting the multiple resistive change elements together and to the cell select device. MSSC arrays are designed (architected) and operated to prevent inter-cell (sneak path) currents between multi-switch storage cells, which prevents stored data disturb from adjacent cells and adjacent cell data pattern sensitivity. Additionally, READ and WRITE operations may be performed on one of the multiple resistive change elements in a multi-switch storage cell without disturbing the stored data in the remaining resistive change elements. However, controlled parasitic currents may flow in the remaining resistive change elements within the cell.

Abstract: A method for setting memory elements in a plurality of states includes applying a set signal to a memory element to transition the memory element from a low-current state to a high-current state; applying a partial reset signal to the memory element to transition the memory element from the high-current state to a state between the high-current state and the low-current state; determining whether the state corresponds to a predetermined state; and applying one or more additional partial reset signals to the memory element until the state corresponds to the predetermined current state. The memory element may be coupled in series with a transistor, and a voltage control circuit may apply voltages to the transistor to set and partially reset the memory element.

Abstract: In an example, an apparatus includes a memory array in a first region and decode circuitry in a second region separate from a semiconductor. The decode circuitry is coupled to an access line in the memory array.

Abstract: A ReRAM device includes a dielectric layer, a bottom electrode, a data storage layer, a metal covering layer, and a top electrode. The dielectric layer has a recess. At least a portion of the bottom electrode is exposed through the recess. The data storage layer is disposed on a sidewall and a bottom surface of the recess, electrically contacts with the bottom electrode, and has a top portion lower than an opening of the recess. The metal covering layer blanket covers the data storage layer, has an extension portion covering the top portion, and connects to the sidewall of the recess. The top electrode is disposed in the recess, and is electrically contact with the metal covering layer.

Abstract: Code comparators with nonpolar dynamical switches are provided. An example apparatus comprises: a plurality of row wires; a plurality of column wires; one or more cross-point devices, and a nonpolar volatile two-terminal device formed within a plurality of cross-point devices. Each cross-point device in the plurality of cross-point devices is located at a cross-point between a row in the plurality of row wires and a column in the plurality of column wires; the nonpolar volatile two-terminal device is configured to automatically revert from an ON state to an OFF state, in response to a removal of a bias or signal applied on the nonpolar volatile two-terminal device. The nonpolar volatile two-terminal device is configured to automatically revert from an ON state to an OFF state, in response to a removal of a bias or signal applied on the nonpolar volatile two-terminal device.

Abstract: A power verification circuit is provided. The power verification circuit includes a current source, a resistive random access memory (RRAM) cell and a Zener diode. The current source is coupled to a power terminal. The RRAM cell is coupled between the current source and a ground terminal. The Zener diode has an anode coupled to the RRAM cell and a cathode coupled to the power terminal. The impedance of the RRAM cell is determined by the power voltage applied to the power terminal.

Abstract: Methods, systems, and devices for programming enhancement in memory cells are described. An asymmetrically shaped memory cell may enhance ion crowding at or near a particular electrode, which may be leveraged for accurately reading a stored value of the memory cell. Programming the memory cell may cause elements within the cell to separate, resulting in ion migration towards a particular electrode. The migration may depend on the polarity of the cell and may create a high resistivity region and low resistivity region within the cell. The memory cell may be sensed by applying a voltage across the cell. The resulting current may then encounter the high resistivity region and low resistivity region, and the orientation of the regions may be representative of a first or a second logic state of the cell.

Abstract: Methods, systems, and devices for data-based polarity write operations are described. A write command may cause a set of data to be written to a set of memory cells. To write the set of data, a write operation that applies voltages across the memory cells based on a logic state of data to be written to the memory cells may be used. During a first interval of the write operation, a voltage may be applied across a memory cell based on a logic state of a data bit to be written to the memory cell. During a second interval of the write operation, a voltage may be applied across the memory cell based on an amount of charge conducted by the memory cell during the first interval.

Abstract: A crossbar array apparatus suppressing deterioration of write precision due to a sneak current is provided. A synapse array apparatus includes a crossbar array configured by connecting resistance-variable type memory elements, a row selecting/driving circuit, a column selecting/driving circuit, and a writing unit performing a write operation to a selected resistance-variable type memory element. The writing unit measures the sneak current generated when applying a write voltage to a selected row line before applying the write voltage, and then the writing unit performs the write operation to the selected resistance-variable type memory element by applying a write voltage having a sum of the measured sneak current and a current generated for performing the write operation.

Abstract: A non-volatile synapse circuit of a non-volatile neural network. The synapse includes: a first input signal line for providing a first input signal; a reference signal line for providing a reference signal; first and second output lines for carrying first and second output signals therethrough, and first and second cells for generating the first and second output signals, respectively. Each of the first and second cells includes: a first upper select transistor having a gate that is electrically coupled to the first input signal line; and a first resistive changing element having one end connected to the first select transistor in series and another end electrically coupled to the reference signal line. The value of the first resistive changing element may be programmable to change the magnitude of an output signal.

Abstract: A non-volatile memory includes a first semiconductor layer vertically stacked on a second semiconductor layer and including a first memory group, a second memory group, a third memory group and a fourth memory group. The second semiconductor layer includes a first region, a second region, a third region and a fourth region respectively underlying the first memory group, second memory group, third memory group and fourth memory group. The first region includes one driving circuit connected to memory cells of one of the second memory group, third memory group and fourth memory group through a first word line, and another driving circuit connected to memory cells of the first memory group through a first bit line, wherein the first word line and first bit line extend in the same horizontal direction.

Abstract: A resistive random access memory (RRAM) structure includes a substrate. A transistor is disposed on the substrate. The transistor includes a gate structure, a source and a drain. A drain contact plug contacts the drain. A metal interlayer dielectric layer is disposed on the drain contact plug. An RRAM is disposed on the drain and within a first trench in the metal interlayer dielectric layer. The RRAM includes the drain contact plug, a metal oxide layer and a top electrode. The drain contact plug serves as a bottom electrode of the RRAM. The metal oxide layer contacts the drain contact plug. The top electrode contacts the metal oxide layer and a metal layer is disposed within the first trench.

Abstract: An approach to form a semiconductor structure with a multiple layer phase change material stack and four electrodes that functions as an integrated switch device. The semiconductor structure includes a sidewall spacer that is on two opposing sides of the multiple layer phase change material stack contacting an edge of each layer of the multiple layer phase change material stack. The semiconductor structure includes a pair of a first type of electrode, where each of the pair of the first type of electrode abuts each of the sidewall spacers on the two opposing sides of the multiple layer phase change material stack. A pair of a second type of electrode, where each of the second type of electrode abuts each of two other opposing sides of the multiple layer phase change material stack and contacts a heater material on outside portions of the multiple layer phase change material stack.

Abstract: A resistive random-access memory (ReRAM) array is provided. The ReRAM array includes a silicon over insulator (SOI) substrate; a first bit line; a first inverted bit line of the first bit line; a second bit line; a second inverted bit line of the second bit line; a first word line; a first inverted word line of the first word line; a first ReRAM cell comprising a first MOSFET, a second MOSFET, and a resistive element; and a second ReRAM cell comprising a first MOSFET, a second MOSFET, and a resistive element connected in series; wherein upon applying a predefined potential on elements of the first ReRAM cell, a state of the first ReRAM cell is adjusted without effecting a state of the second ReRAM.

Abstract: The present disclosure provides a self-rectifying resistive memory, including: a lower electrode; a resistive material layer formed on the lower electrode and used as a storage medium; a barrier layer formed on the resistive material layer and using a semiconductor material or an insulating material; and an upper electrode formed on the barrier layer to achieve Schottky contact with the material of the barrier layer; wherein, the Schottky contact between the upper electrode and the material of the barrier layer is used to realize self-rectification of the self-rectifying resistive memory. Thus, no additional gate transistor or diode is required as the gate unit. In addition, because the device has self-rectifying characteristics, it is capable of suppressing read crosstalk in the cross-array.