Nuclear Induction Or Spin Echo Patents (Class 365/152)
  • Patent number: 9826530
    Abstract: A communication system that improves the total throughput of the communication is provided. A communication system (1) according to the present invention includes a plurality of terminals and an access point (201) with which the terminals communicate. The terminal acquires the number of terminals in a communication network of the access point (201), and divides, based on the number of terminals, the plurality of terminals into groups so that each group includes the number of terminals equal to or smaller than the number of terminals permitted to communicate with the access point (201) within a predetermined period. The terminal allocates the group to the predetermined period, and determines, based on the group to which a terminal belongs, whether to permit data transmission within the predetermined period to which the group is allocated.
    Type: Grant
    Filed: October 17, 2013
    Date of Patent: November 21, 2017
    Assignee: NEC CORPORATION
    Inventors: Yasuhiro Yamasaki, Norihito Fujita, Hideaki Sone, Hideaki Goto
  • Patent number: 9097778
    Abstract: In the diffusion spectroscopic imaging, in which intensity of molecular diffusion is imaged with separating chemical substances, with suppressing artifacts resulting from object motion of an object, spatial resolution, spectral band and SNR are maintained, and measurement accuracy is enhanced. A measurement for acquiring diffusion SI data is repeated a plurality of times with changing acquisition timing, phase variation of each measurement result is corrected, and a diffusion SI image is reconstructed from the corrected measurement results. In addition, the phase variation is calculated for every point in the space from the diffusion SI data acquired by each measurement or navigation data obtained by each measurement. The phase correction is independently performed for every point in the space.
    Type: Grant
    Filed: February 3, 2010
    Date of Patent: August 4, 2015
    Assignee: HITACHI, LTD.
    Inventors: Yoshitaka Bito, Satoshi Hirata, Hisaaki Ochi, Koji Hirata, Toru Shirai, Yosuke Otake
  • Publication number: 20150009746
    Abstract: A system comprising a solid state lattice containing an electronic spin coupled to a nuclear spin; an optical excitation configuration which is arranged to generate first optical radiation to excite the electronic spin to emit output optical radiation without decoupling the electronic and nuclear spins; wherein the optical excitation configuration is further arranged to generate second optical radiation of higher power than the first optical radiation to decouple the electronic spin from the nuclear spin thereby increasing coherence time of the nuclear spin; a first pulse source configured to generate radio frequency (RF) excitation pulse sequences to manipulate the nuclear spin and to dynamically decouple the nuclear spin from one or more spin impurities in the solid state lattice so as to further increase the coherence time of the nuclear spin; a second pulse source configured to generate microwave excitation pulse sequences to manipulate the electronic spin causing a change in intensity of the output optic
    Type: Application
    Filed: December 23, 2012
    Publication date: January 8, 2015
    Applicant: PRESIDENT AND FELLOWS OF HARVARD COLLEGE
    Inventors: Georg Kucsko, Peter Maurer, Liang Jiang, Norman Yao, Mikhail Lukin
  • Patent number: 7408835
    Abstract: Described herein is an optically readable memory device comprising a molecular memory obtained using carbon nanotubes. In particular, the molecular memory uses, as memory element, a bundle of carbon nanotubes, for which it is possible to obtain at least two stable states by modifying their geometrical configuration and, consequently, their optical transmission properties.
    Type: Grant
    Filed: February 25, 2003
    Date of Patent: August 5, 2008
    Assignee: STMicroelectronics S.r.l.
    Inventors: Luigi Occhipinti, Michele Portico Ambrosio
  • Patent number: 6927995
    Abstract: A magnetic memory cell includes a first magneto-resistive device and a second magneto-resistive device. The first magneto-resistive device has a first sense layer. The second magneto-resistive device is connected in series with the first magneto-resistive device. The second magneto-resistive device has a second sense layer. At least one controlled nucleation site is placed on at least one of the first sense layer and the second sense layer.
    Type: Grant
    Filed: May 30, 2003
    Date of Patent: August 9, 2005
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Janice H. Nickel, Manoj K. Bhattacharyya
  • Patent number: 6624002
    Abstract: In accordance with the present invention, nanometer-scale reversible electronic switches are provided that can be assembled to make cross-bar circuits that provide memory, logic, and communications functions. The electronic switches, or crossed-wire devices, comprise a pair of crossed wires that form a junction where one wire crosses another at an angle other than zero degrees and at least one connector species connecting the pair of crossed wires in the junction. The junction has a functional dimension in nanometers, wherein at least one connector species and the pair of crossed wires forms an electrochemical cell. The connector species comprises a bistable molecule having a general formula given by The bistable molecules evidence high switching speed. Such molecules are essentially stable against switching due to thermal fluctuations.
    Type: Grant
    Filed: January 16, 2002
    Date of Patent: September 23, 2003
    Assignee: Hewlett-Packard Development Company, LP.
    Inventors: Alexandre M. Bratkovski, Pavel Kornilovich, R. Stanley Williams, Xiao-An Zhang
  • Patent number: 6272038
    Abstract: The present invention provides high density, non-volatile memory devices incorporating winged trimers of porphyrinic macrocycles. In preferred embodiments, the two wing porphyrinic macrocycles are the same, and both are different from the center macrocycle. Such molecules are relatively easy to synthesize, have four different and distinguishable oxidation states, and thus provide molecules, information storage media and apparatus that store two bits of information.
    Type: Grant
    Filed: January 14, 2000
    Date of Patent: August 7, 2001
    Assignee: North Carolina State University
    Inventors: Peter C. Clausen, Jonathan S. Lindsey
  • Publication number: 20010000336
    Abstract: Method for forming quantum dots using agglomeration of a conductive layer and a semiconductor device resulting therefrom are disclosed. The method includes the steps of forming a first insulating layer on a substrate, forming a conductive layer on the first insulating layer, forming a second insulating layer on the conductive layer, and annealing the conductive layer between the first, and second insulating layers to agglomerate the conductive layer.
    Type: Application
    Filed: December 14, 2000
    Publication date: April 19, 2001
    Applicant: Hyundai Electronics Industries Co., Ltd
    Inventors: Ki Bum Kim, Tae Sik Yoon, Jang Yeon Kwon
  • Patent number: 5978256
    Abstract: A non-volatile memory device including a silicon oxide film formed to a desired thickness over a silicon substrate, and a plurality of nano crystals formed in the silicon oxide film by a conductive material implanted in the silicon oxide film. The invention also provides a data storing method using the non-volatile memory device. The data storing method includes the steps of disposing an atomic force microscope (AFM) tip, adapted to locally applying an electric field to a micro area, at a desired height over the semiconductor device, applying voltage of a threshold level or higher level to the AFM tip under the condition in which the height of the AFM tip is maintained, thereby effecting an electric field on a desired portion of the semiconductor device disposed beneath the AFM tip, and forcing the nano crystals formed in the silicon oxide film to capture free electrons existing in the silicon substrate by virtue of the electric field.
    Type: Grant
    Filed: January 29, 1998
    Date of Patent: November 2, 1999
    Assignee: Korea Advanced Institute of Science & Technology
    Inventors: Hee Soo Sohn, Sung Chul Hong
  • Patent number: 5396453
    Abstract: A memory apparatus for effecting the writing or reading of information on a recording medium by a probe has a base having the probe attached thereto, a substrate supporting the recording medium thereon and movable relative to the base, and a frame containing the base and the substrate therein, and the coefficients of linear expansion of the base and the substrate are made approximate to each other since the coefficients of linear expansion of the base and the substrate are approximate to each other, any relative positional deviation between the probe and the recording medium will not occur even if temperature changes.
    Type: Grant
    Filed: July 6, 1994
    Date of Patent: March 7, 1995
    Assignee: Canon Kabushiki Kaisha
    Inventors: Haruki Kawada, Toshihiko Miyazaki, Hideyuki Kawagishi, Akihiko Yamano
  • Patent number: 5097443
    Abstract: Disclosed are medium and methods for storage and reading of stored information. The storage medium comprises an oxide layer having a plurality of pits and projections on the oxide layer surface. Information storage is achieved by applying voltage or light, in accordance to information signals, to the oxide layer, to differentially heat said oxide layer and create a plurality of portions which contain different quantities of oxygen. Stored information is read by the application of voltage or light to the oxide layer containing a plurality of portions containing different quantity of oxygen and detection of the electrical resistance or light reflectivity of each of said plurality of portions.
    Type: Grant
    Filed: March 28, 1990
    Date of Patent: March 17, 1992
    Assignee: Canon Kabushiki Kaisha
    Inventors: Norio Kaneko, Katsuhiko Shinsho, Keisuke Yamamoto
  • Patent number: 4327425
    Abstract: A method for the recording of spin resonance spectra, in which the spins of a nuclear species of a sample located in a magnetic field are excited by a pulsed rf signal and the relaxation oscillations of the spins are repetitively sampled and recorded at predetermined times and in which a radio-frequency decoupling signal is irradiated upon the sample to reduce coupling to the spins of another nuclear species, is characterized in that the decoupling signal consists of a periodic sequence of pulse groups comprising several pulses each, the pulses being so short that the frequency mixture detectable in the pulses according to the Fourier analysis covers the entire range of spin resonances of the other nuclear species.
    Type: Grant
    Filed: July 25, 1979
    Date of Patent: April 27, 1982
    Assignee: Spectrospin AG
    Inventors: Richard R. Ernst, Walter P. Aue