Abstract: A processor for performing a predetermined computational operation in which one or multiple data element(s) is/are used to determine a result. The processor includes one or more processor core(s) and at least one buffer memory, connectable to a main memory, and if the main memory is connected, it is designed to access the main memory. Each processor core is designed to execute instructions. The at least one buffer memory includes a calculation circuit which is designed to perform the computational operation in response to an execution signal if the one or the multiple data element(s) is/are stored in the buffer memory, the result being stored in the buffer memory. The processor is designed to perform the computational operation optionally using one of the processor cores with the aid of the instructions or to perform it in the at least one buffer memory using the respective calculation circuit.

Abstract: A memory system includes a plurality of memory devices, each connected to internal channels respectively including an internal data channel and an internal control channel, and each configured to perform communication based on a first interface protocol, a controller connected to an external channel including an external data channel and an external control channel and configured to perform communication based on a second interface protocol, and an interface circuit connecting the external channel to each of the internal channels. The interface circuit is configured to perform channel conversion by serializing a parallel data signal received from the controller through the external data channel and outputting the serialized signal to the internal control channel included in a first one of the internal channels, or parallelizing a signal received through the external control channel and outputting the parallelized signal to the internal data channel included in the first one of the internal channels.

Abstract: According to one embodiment, a semiconductor memory device includes a first circuit, multiple second circuits, and a first number of first channels connected to the first circuit. One or more second circuits are connected to each first channel. The control circuit is connected to the semiconductor memory device via a second channel. The control circuit generates multiple first access requests each for one of the second circuits. The control circuit determines order of execution of the first access requests to allow concurrent execution of a second number of first access requests designating two or more of the second circuits connected to different first channels. The control circuit executes in parallel the second number of data transfers responsive to the second number of first access requests via the second channel at a transfer rate the second number of times a transfer rate of one of the first number of first channels.

Abstract: Systems and methods for filtering data (DQ) signals are described herein. The systems and methods may involve operating a memory to enter a training mode and sending a command to a decoder while the memory is in the training mode. The decoder may generate a command/address waveform in response to the command. The systems and methods may involve transmitting a burst indicator waveform via a first pin of the memory. The burst indicator waveform may be generated by a burst indicator generator of the memory based on the command/address waveform.

Abstract: A memory system having a processing device (e.g., CPU) and memory regions (e.g., in a DRAM device) on the same chip or die. The memory regions store data used by the processing device during machine learning processing (e.g., using a neural network). One or more controllers are coupled to the memory regions and configured to: read data from a first memory region (e.g., a first bank), including reading first data from the first memory region, where the first data is for use by the processing device in processing associated with machine learning; and write data to a second memory region (e.g., a second bank), including writing second data to the second memory region. The reading of the first data and writing of the second data are performed in parallel.

Abstract: System on chips, memory circuits, and method for data access, the memory circuits including a memory cell array and an input/output (I/O) connection interface coupled to the memory cell array, wherein the I/O connection interface is configured for coupling to an external signal line to directly receive a transistor-level operation signal from an external memory controller for accessing data in the memory cell array.

Abstract: Embodiments provide a read operation circuit, a semiconductor memory, and a read operation method. The read operation circuit includes: a data determination module configured to read read data from the memory bank, and determine, according to the number of bits of a data change between previous read data and current read data, whether to invert the current read data to output global bus data for transmission through a global bus and inversion flag data for transmission through an inversion flag signal line; a data receiving module configured to determine whether to invert the global bus data according to the inversion flag data to output cache data; a parallel-to-serial conversion circuit configured to perform parallel-to-serial conversion on the cache data to generate output data of a DQ port; and a data buffer module configured to determine an initial state of the global bus according to enable signal and current read data.

Abstract: A circuit and method for data transmission, and a storage apparatus are provided. A mode register decoding module is configured to generate a mode register unselected enable signal, a mode register read enable signal, or a mode register write enable signal according to received mode register address information, a mode register read control signal, or a mode register write control signal. A mode register read-write module is configured to: cache data on data line according to mode register write enable signal in write state, and output selected data and unselected data after setting the unselected data to zero according to the mode register read enable signal and the mode register unselected enable signal in a read state. The logic gate module is configured to calculate an OR value of the data outputted by each mode register read-write module in the read state and output a calculation result.

Abstract: Systems, devices, media, and methods are presented for assembling a database for query generation. The database is assembled by receiving a query history log, the query history log including target queries and a mapping between each of the target queries and associated subqueries for each of the target queries, selecting one or more of the associated subqueries for a first target query based on a conditional probability exceeding a threshold for the associated subqueries of the first target query compared to the matching associated subqueries of the other target queries, and including the first target query and the selected one or more associated subqueries for the first target query in the in-memory data structure store for query generation.

Abstract: Systems, devices, media, and methods are presented for assembling a database for query generation. The database is assembled by receiving a query history log, the query history log including target queries and a mapping between each of the target queries and associated subqueries for each of the target queries, selecting one or more of the associated subqueries for a first target query based on a conditional probability exceeding a threshold for the associated subqueries of the first target query compared to the matching associated subqueries of the other target queries, and including the first target query and the selected one or more associated subqueries for the first target query in the in-memory data structure store for query generation.

Abstract: A semiconductor device includes an output control circuit configured to generate a pre-output control signal and an output control signal according to the number of times that an output strobe pulse is inputted. The semiconductor device also includes a pipe circuit configured to generate latched data by latching input data on the basis of an input control signal, select some bits of the bits of the latched data and set the selected bits to pre-output data on the basis of the pre-output control signal, and output the pre-output data as output data on the basis of the output control signal.

Abstract: The storage device includes a memory controller and a plurality of banks, each of the plurality of banks including a plurality of memory devices. Each of the plurality of memory devices includes: a data selector for selecting and outputting data of a memory device that is included in any one of the plurality of banks based on a bank select signal; a latch unit for storing the data that is output from the data selector; and a transmission control signal generator for generating the bank select signal such that the data that is stored in the latch unit is sequentially output.

Abstract: A storage device detects an error of ROM data and corrects the error. The storage device includes a memory device and a memory controller for controlling the memory device. The memory device includes a plurality of planes each storing Read Only Memory (ROM) data, and a ROM data controller configured to control the plurality of planes based on whether the ROM data from all of the planes are the same. The memory controller includes an operation state determiner configured to output to the ROM data controller a ROM data output command for reading the ROM data respectively stored in the plurality of planes, according to an operation state of the memory device.

Abstract: A method for writing a mode register in a semiconductor device, the method includes receiving a mode register command and a mode signal; generating a first mode register setting signal; delaying the first mode register setting signal in a first latency shifter to provide a second mode register setting signal; receiving a data signal in synchronization with the second mode register setting signal; and writing the mode signal to the mode register only if the received data signal has a first logic level.

Abstract: An address counting circuit includes a shared address counting circuit configured to generate a first shared address and a second shared address by counting an external start address at a first edge and a second edge of a counting clock signal and a latch circuit including a plurality of latches configured to share the first shared address and the second shared address, respectively and generate a plurality of column addresses by latching the first shared address and second shared address according to a plurality of latch clock signals.

Abstract: In writing and reading data at a semiconductor storage device, control is carried out such that, at a time of a burst mode, in a case in which a value of a block address which is, from addresses assigned to a region of an internal address, an address for selecting a sense amplifier block from plural sense amplifier blocks, is a largest value, a first sense amplifier block and a second sense amplifier block are made to access different banks, and, in case in which the value of the block address is not the largest value, the first sense amplifier block and the second sense amplifier block are made to access a same bank of plural banks.

Abstract: The present disclosure includes apparatuses, and methods for data state synchronization. An example apparatus includes performing a write operation to store a data pattern in a group of resistance variable memory cells corresponding to a selected managed unit having a first status, updating a status of the selected managed unit from the first status to a second status responsive to performing the write operation, and providing data state synchronization for a subsequent write operation performed on the group by placing all of the variable resistance memory cells of the group in a same state prior to performing the subsequent write operation to store another data pattern in the group of resistance variable memory cells.

Abstract: A method of operating a first-in-first-out memory, called a FIFO, includes performing write and read operations of data with a FIFO. The FIFO has a size fifo_size and a maximum retention time. Once a datum is written to the FIFO, there is a limit of fifo_size-1 write operations before the datum becomes invalid and there is a limit of fifo_size-1 read operations before the datum is read, and the data is refreshed before reaching the maximum retention time. During the refreshing, the FIFO is available for further write and read operations.

Abstract: Multi-bank, dual-pipe SRAM systems, methods, processes of operating such SRAMs, and/or methods of fabricating multi-bank, dual-pipe SRAM are disclosed. For example, one illustrative multi-bank, dual-pipe SRAM may comprise features for capturing read and write addresses, splitting and/or combining them via one or more splitting/combining processes, and/or bussing them to the SRAM memory banks, where they may be read and written to a particular bank. Illustrative multi-bank, dual-pipe SRAMs and methods herein may also comprise features for capturing two beats of write data, splitting and/or combining them via one or more splitting/combining processes, and bussing them to each SRAM bank, where they may be split/combined/recombined via one or more processes to write data to particular memory bank(s).

Abstract: A method for utilizing parallel paths of differing performance to improve efficiency is disclosed. In one embodiment, such a method includes transmitting, over a faster path, a first command to perform first actions intended to improve efficiency of second actions associated with a second command. The method transmits, over a slower path in parallel with the faster path, the second command. Alternatively, a method for utilizing parallel paths of differing performance to improve efficiency includes receiving, over a faster path, a first command to perform first actions intended to improve efficiency of second actions associated with a second command. The method executes the first command to perform the first actions. The method receives, over a slower path in parallel with the faster path, the second command and executes the second command to perform the second actions. Corresponding systems and computer program products are also disclosed.

Abstract: An apparatus including through substrate vias (TSVs) used to interconnect stacked chips is described. The apparatus according to an embodiment includes a plurality of first selection lines each extending in a first direction; a plurality of second selection lines each extending in a second direction to cross the plurality of first selection lines; and a plurality of a TSV units disposed in intersections of the plurality of first selection lines and the plurality of second selection lines, respectively. Each TSV unit of the plurality of TSV units includes a TSV; a switch coupled to the TSV; and a selection circuit. The selection circuit is configured to control a switching state of the switch responsive to each of an associated one of the plurality of first selection lines and an associated one of the plurality of second selection lines being set to an active level.

Abstract: The present invention relates to a transmission interface. A display device comprises a driving circuit and a transmission interface. The transmission method of the transmission interface is that a first input is used for receiving a first data string; a second input is used for receiving a second data string; and the processing unit receives the first and second data strings. The first data string has a first identification bit and a plurality of first information bits. The second data string has a plurality of second information bits. The processing unit identifies either to write a plurality of parameters or a plurality of data to a storage circuit or to read the stored content from the storage circuit according to the first identification bit and the plurality of first information bits. The processing circuit further writes or reads the storage circuit according to the plurality of second information bits.

Abstract: A memory controller is provided to increment a source timestamp count responsive to a clock signal. Further, the memory controller associates the source timestamp count to a respective word for each endpoint in a plurality of endpoints. The memory controller transmits the received clock signal, a respective data word, and an associated source count to each endpoint. Each endpoint increments a destination count responsive to the clock signal. Each endpoint further transmits its respective word to an external memory responsive to the destination count being greater than or equal to the associated source count by a threshold margin.

Abstract: A semiconductor memory may include: a storage unit suitable for storing a minimum operation interval between row command operations, a detection unit suitable for detecting whether row command signals inputted for the row command operations are activated at the minimum operation interval, a latching unit suitable for generating flag signals by latching the row command signals, and a shifting unit suitable for shifting the flag signals based on the minimum operation interval in response to an output signal of the detection unit, and generating an internal row command signals.

Abstract: A semiconductor device includes at least one first row selection line, at least one column selection line that intersects with the first row selection line, and a first fuse circuit including a first fuse array, and suitable for outputting a first fuse signal programmed in the first fuse array by using an external voltage as a source voltage in a power-up mode, wherein the first fuse array includes at least one first fuse cell coupled with the first row selection line and the column selection line.

Abstract: An integrated circuit device having memory is disclosed. The integrated circuit device comprises programmable resources; programmable interconnect elements coupled to the programmable resources, the programmable interconnect elements enabling a communication of signals with the programmable resources; a plurality of memory blocks; and dedicated interconnect elements coupled to the plurality of memory blocks, the dedicated interconnect elements enabling access to the plurality of memory blocks. A method of implementing memory in an integrated circuit device is also disclosed.

Abstract: Serial input devices (e.g., pin electronics modules) are coupled to an interface via data lines, clock lines, and select lines. A first subset and a second subset of the devices are each arrayed in columns, rows, and layers. Each data line is coupled to a respective row in the first subset and a respective row in the second subset; each clock line is coupled to a respective column in the first subset and a respective column in the second subset; and each layer in each subset is coupled to a respective select line. The interface can program a device by concurrently activating one of the data lines, one of the clock lines, and one of the select lines.

Abstract: A non-volatile memory (NVM) system compatible with double data rate, single data rate, or other high speed serial burst operation. The NVM system includes input and output circuits adapted to synchronously send or receive back-to-back continuous bursts of serial data at twice the frequency of any clock input. Each burst is J bits in length. The NVM system includes read and write circuits that are adapted to read or write J bits of data at a time and in parallel, for each of a multitude of parallel data paths. Data is latched such that write time is similar for each bit and is extended to the time it takes to transmit an entire burst. Consequently, the need for small and fast sensing circuits on every column of a memory array, and fast write time at twice the frequency of the fastest clock input, are relieved.

Abstract: A parallel-serial conversion circuit includes an adjustment circuit that receives a parallel input signal having a plurality of bits and generates and outputs a parallel output signal having a plurality of bits. A conversion circuit coupled to the adjustment circuit generates a plurality of clock signals having mutually different phases with respect to a reference clock signal on the basis of the reference clock signal and serially selects the plurality of bits of the parallel output signal in accordance with the generated plurality of clock signals to convert the parallel output signal to serial 1-bit output signals. The adjustment circuit adjusts the output timing of each of the plurality of bits of the parallel output signal in time unit of half of one cycle of the reference clock signal.

Abstract: A semiconductor memory apparatus includes a data alignment control signal generation unit configured to output a data alignment control signal by generating a pulse when a tuning mode signal is enabled, and generate the data alignment control signal as a count pulse is inputted after the data alignment control signal generated by the tuning mode signal is outputted; a timing control block configured to determine a delay amount according to delay codes, generate a delay control signal by delaying the data alignment control signal, and output a timing control signal by latching the delay control signal at an enable timing of a data output control signal; a delay time control block configured to generate the delay codes; and a data alignment unit configured to convert parallel data into serial data, and change a data sequence of the serial data in response to the timing control signal.

Abstract: The data input circuit of a nonvolatile memory device includes a redundancy multiplexer configured to selectively output normal data and redundancy data to an internal global data line in response to a redundancy signal, a plurality of pipe registers coupled to the internal global data line and configured to latch normal data or redundancy data received through the internal global data line in response to a plurality of respective latch signals, and an output multiplexer configured to sequentially output the latched data in response to a plurality of selection signals.

Abstract: A multi-port memory device includes a plurality of serial I/O data pads for providing a serial input/output (I/O) data communication; a plurality of ports for performing the serial I/O data communication with external devices through the serial I/O data pads; a plurality of banks for performing a parallel I/O data communication with the ports; a plurality of first data buses for transferring first signals from the ports to the banks; a plurality of second data buses for transferring second signals from the banks to the ports; and a switching unit for connecting the first data buses with the second data buses in response to a control signal.

Abstract: A latch system applied to a plurality of banks of a memory circuit includes a front latch circuit and a plurality of rear latch circuit. The front latch circuit is used for receiving a datum and a front latch enabling signal, and generating and outputting an intermediate signal according to the datum and the front latch enabling signal. Each rear latch circuit of the plurality of rear latch circuits is coupled to an output terminal of the front latch circuit for receiving the intermediate signal, and generating and outputting a rear latch datum to a corresponding bank of the plurality of banks according to the intermediate signal and a corresponding rear latch enabling signal, where only one rear latch enabling signal is enabled at any time.

Abstract: Data serializers, output buffers, memory devices and methods for serializing are provided, including a data serializer that may convert digits of parallel data to a stream of corresponding digits of serial data digits. One such data serializer may include a logic system receiving the parallel data digits and clock signals having phases that are equally phased apart from each other. Such a data serializer may use the clock signals to generate data sample signals having a value corresponding to the value of a respective one of the parallel data digits and a timing corresponding to a respective one of the clock signals. The data sample signals may be applied to a switching circuit that includes a plurality of switches, such as respective transistors, coupled to each other in parallel between an output node and a first voltage.

Abstract: A semiconductor device according to the present invention includes plural core chips CC0 to CC7 to which mutually different pieces of chip identification information LID are allocated, and an interface chip IF that controls the core chips CC0 to CC7. The interface chip IF receives address information ADD for specifying a memory cell, and supplies in common a part of the address information to the core chips CC0 to CC7 as chip selection information SEL to be compared with the chip identification information LID. With this configuration, it appears from a controller that an address space is simply enlarged. Therefore, an interface that is same as that for a conventional semiconductor memory device can be used.

Abstract: An apparatus, system, and method for controlling data transfer to an output port of a serial data link interface in a semiconductor memory is disclosed. In one example, a flash memory device may have multiple serial data links, multiple memory banks and control input ports that enable the memory device to transfer the serial data to a serial data output port of the memory device. In another example, a flash memory device may have a single serial data link, a single memory bank, a serial data input port, a control input port for receiving output enable signals. The flash memory devices may be cascaded in a daisy-chain configuration using echo signal lines to serially communicate between memory devices.

Abstract: A semiconductor memory device includes a memory cell array having plural memory cells that require a refresh operation when retaining data; a read/write control unit that performs read-access or write-access of memory cell address specified for the memory cell array based on instructions from the outside; a refresh control unit that performs hidden-refresh of memory cells without control from the outside; and a schedule control unit that makes the refresh control unit perform hidden-refresh after the read/write control unit read-accesses the memory cell array, and that also makes the refresh control unit perform hidden-refresh before the read/write access control unit performs write-access.

Abstract: A semiconductor memory device and system are disclosed. The memory device includes a memory, a plurality of inputs, and a device identification register for storing register bits that distinguish the memory device from other possible memory devices. Circuitry for comparing identification bits in the information signal with the register bits provides positive or negative indication as to whether the identification bits match the register bits. If the indication is positive, then the memory device is configured to respond as having been selected by a controller. If the indication is negative, then the memory device is configured to respond as having not been selected by the controller. A plurality of outputs release a set of output signals towards a next device.

Abstract: The semiconductor memory device includes plural core chips that are allocated with different chip identification information from each other and an interface chip that controls the plural core chips. The interface chip receives address information to specify memory cells and commonly supplies a part of the address information as chip selection information for comparison with the chip identification information to the plural core chips. As a result, since the controller recognizes that an address space is simply enlarged, the same interface as that in the semiconductor memory device according to the related art can be used.

Abstract: A semiconductor memory device, in which interference between adjoining cells can be reduced and an expansion of a chip area can be suppressed, comprising: a memory cell array in which plural memory cells connected to plural word lines and plural bit lines are disposed in a matrix form; sense amplifiers each of which is to be connected to each of the bit lines; a control circuit which controls voltages of the word lines and the bit lines, and programs data into the memory cells or reads data from the memory cells; wherein the plural bit lines include at least a first, a second, a third and a fourth bit lines adjoining to each other, and the sense amplifiers include at least a first and a second sense amplifiers, a first and a fourth selection transistors which are provided between the first and the fourth bit lines and the first sense amplifier, and connect the first and the fourth bit lines to the first sense amplifier; and a second and a third selection transistors which are provided between the second and t

Abstract: A data processing system includes a first semiconductor device that has a plurality of blocks each including plural data, and a second semiconductor device that has a first control circuit controlling the first semiconductor device, and the first control circuit issues a plurality of commands to communicate with the first semiconductor device in units of access units including a plurality of first definitions that define a plurality of burst lengths indicating numbers of different data, respectively, and a plurality of second definitions that define correspondences between certain elements of data among the plural data included in the blocks, respectively, and arrangement orders in the numbers of different data that constitute the burst lengths, respectively, and communicates with the first semiconductor device through the plural data in the numbers of different data according to the first and second definitions.

Abstract: A system includes a memory controller and a plurality of memory devices connected in-series that communicate with the memory controller. Each of the memory devices has multiple independent serial ports for receiving and transmitting data. The memory controller a device address (DA) or ID number for designating a device that executes a command. Data contained in the command sent by the memory controller is captured by an individual link control circuit, in response to internally generated clock with appropriate latencies. The captured data is written into a corresponding memory bank. The data stored in one of a plurality of memory banks of one memory device is read in accordance with the addresses issued by the memory controller. The read data is propagated from the memory device through the series-connected memory devices to the memory controller.

Abstract: Disclosed herein is a semiconductor device that includes: a frequency dividing circuit dividing a frequency of a first clock signal to generate second clock signals that are different in phase from one another; a multiplier circuit multiplying the second clock signals to generate a third clock signal; a data input/output terminal; data buses; and a data input/output circuit coupled between the data input/output terminal and the data buses. The data input/output circuit includes a data output circuit and a data input circuit. The data output circuit outputs read data supplied in parallel from the data buses to the data input/output terminal in serial in synchronism with the third clock signal. The data input circuit outputs write data supplied in serial from the data input/output terminal to the data buses in parallel in synchronism with a predetermined one of the second clock signals.

Abstract: A clock control circuit includes a first clock buffer configured to toggle a first clock signal when a self-refresh exit command signal is inputted during a self-refresh operation; and a second clock buffer configured to toggle a second clock signal when the self-refresh operation is finished, the second clock being provided to internal circuits.

Abstract: An apparatus, system, and method for controlling data transfer to an output port of a serial data link interface in a semiconductor memory is disclosed. In one example, a flash memory device may have multiple serial data links, multiple memory banks and control input ports that enable the memory device to transfer the serial data to a serial data output port of the memory device. In another example, a flash memory device may have a single serial data link, a single memory bank, a serial data input port, a control input port for receiving output enable signals. The flash memory devices may be cascaded in a daisy-chain configuration using echo signal lines to serially communicate between memory devices.

Abstract: An integrated circuit chip includes an internal circuit configured to generate output data, an inversion determination unit configured to activate/deactivate an inversion signal according to state information regarding a state of the integrate circuit chip, and a signal output circuit configured to invert or not to invert the output data in response to the inversion signal and output the inverted or non-inverted output data.

Abstract: An integrated circuit can include an input/output (I/O) bank. The I/O bank can include a plurality of byte clock groups. Each byte clock group can include at least one phaser configured to clock circuit elements of the byte clock group at a frequency at which a source synchronous device coupled to the byte clock group communicates data.

Abstract: A semiconductor device includes plural core chips and an interface chip that controls the plural core chips. Each of the plural core chips includes a layer address generating circuit that generates a second chip address by incrementing a value of a first chip address and a layer address comparing circuit that compares a third chip address supplied from the interface chip and the second chip address, and activates a chip selection signal when the third chip address and the second chip address are matched with each other. When a non-used chip signal is in an inactivated state, the layer address generating circuit supplies the second chip address to another core chip, and when the non-used chip signal is in an activated state, the layer address generating circuit supplies the first chip address to another core chip without a change.

Abstract: To provide a semiconductor memory device including a mode register in which a mode signal is set, a data amplifier that amplifies read data read from a memory cell array, a data bus onto which the read data amplified by the data amplifier is transmitted, a data input/output circuit that outputs a signal on the data bus to outside, and a mode signal output circuit that outputs the mode signal set in the mode register onto the data bus. Because the mode signal is not caused to interrupt halfway along the data input/output circuit, but supplied onto the data bus that connects the data amplifier to the data input/output circuit, no collision of the read data with the mode signal occurs in the data input/output circuit.

Abstract: A semiconductor device comprises a plurality of terminals, a plurality of drive units corresponding to the plurality of terminals, and a data control unit. The data control unit outputs parallel data applied to the plurality of terminals to the plurality of drive unit in a normal operation mode, and converts serial data applied to a particular terminal, which is one of the plurality of terminals, to parallel data, and outputs the parallel data to which the serial data applied to the particular terminal is converted to the plurality of drive units in a test mode.