Abstract: An integrated circuit (IC) memory controller is disclosed. The memory controller includes a receiver to receive a strobe signal and provide an internal strobe signal. An adjustable delay circuit delays an enable signal to generate a delayed enable signal. A gate circuit generates a gated strobe signal using the delayed enable signal that masks transitions of the internal strobe signal that occur prior to a valid region of the internal strobe signal. A sample circuit samples data using the gated strobe signal.

Abstract: A semiconductor system may include a first semiconductor device and a second semiconductor device. The first semiconductor device compares a received signal with an original signal to generate a driving force control signal. The first semiconductor device also drives the original signal using a driving force in accordance with the driving force control signal to output an external transmission signal. The second semiconductor device receives the external transmission signal to generate a positive signal and a negative signal. The second semiconductor device also generates a restoration signal in response to the positive signal and the negative signal. The second semiconductor device additionally outputs the restoration signal as the external transmission signal to the first semiconductor device.

Abstract: A memory controller is provided. The memory controller is suitable for a pseudo static random access memory. The memory controller includes a mode register, a mode register write controller and a latency controller. The mode register is configured to generate a latency control signal according to a write instruction signal. The mode register write controller is configured to generate the write instruction signal during a mode register write operation and generate a write mask signal according to a chip selection signal. The latency controller generates a latency type control signal according to the latency control signal and the write mask signal.

Abstract: A memory includes virtual ground circuitry configured to generate a virtual ground voltage (greater than zero volts) at a virtual ground node, a memory array of resistive memory cells in which each resistive memory cell includes a select transistor and a resistive storage element and is coupled to a first column line of a plurality of first column lines, and a first decoder configured to select a set of first column lines for a memory read operation from a selected set of the resistive memory cells. The memory includes read circuitry, and a first column line multiplexer configured to couple each selected first column line of the set of first column lines to the read circuitry during the memory read operation, and configured to couple each unselected first column line of the plurality of first column lines to the virtual ground node during the memory read operation.

Abstract: An electronic device may include: a column control circuit configured to generate a column control pulse and a mode register enable signal, each with a pulse that is generated based on logic levels of a chip selection signal and a command address; and a control circuit configured to generate a read control signal to perform a read operation and a mode register read operation by delaying the column control pulse based on a logic level of the mode register enable signal and configured to generate a mode register control signal to perform the mode register read operation by delaying the column control pulse based on a logic level of the mode register enable signal.

Abstract: The present disclosure discloses a memory access interface device. The clock generation circuit thereof generates reference clocks. Each of the DDR access signal transmission circuits thereof, under a DDR mode, adjusts a phase and a duty cycle of one of DDR access signals according to one of DDR reference clock signals to generate one of output access signals to access the memory device. The data signal transmission circuit thereof, under an SDR mode, applies a minimum latency on an SDR data signal according to the command and address reference clock signal to generate an output SDR data signal to access the memory device. The command and address signal transmission circuit thereof, under either the DDR or SDR mode, applies a programmable latency on a command and address signal according to the command and address reference clock signal to generate an output command and address signal to access the memory device.

Abstract: Apparatus and methods are provided for improving yield and frequency performance of integrated circuit processors, such as multiple-core processors. In an example, an apparatus can include a plurality of clock buffers, each clock buffer of the plurality of clock buffers configured to receive a first clock signal and distribute a plurality of second clock signals, a one-time programmable locate critical path mechanism configured provide a plurality of indications to enable or disable a delay of each clock buffer of the plurality of clock buffers, and a power management control circuit configured to over-ride one or more of the plurality of indications in a first non-test mode of operation of the apparatus and to not over-ride the one or more indications in a second non-test mode of operation of the apparatus.

Abstract: A method for programming a ReRAM cell including a ReRAM device connected in series with an access transistor includes biasing the ReRAM cell with a programming potential that configures the access transistor in a common-source configuration and applying at least one programming voltage pulse to a gate of the access transistor, the programming voltage pulse having a magnitude selected to limit programming current to a preselected value.

Abstract: The present invention relates to a method and apparatus for establishing a plurality of bearers for transmitting and receiving data in a wireless communication system. In accordance with an embodiment of the present invention, there is provided a method of establishing, by a base station, a plurality of bearers including establishing the plurality of bearers between a plurality of network nodes and the base station, receiving a specific message through a dedicated bearer from a user equipment, the specific message including message type information indicating a type of the specific message, and transmitting the specific message to one of the plurality of network nodes through one of the plurality of bearers based on the message type information.

Abstract: A method for programming a ReRAM cell including a ReRAM device connected in series with an access transistor includes biasing the ReRAM cell with a programming potential that configures the access transistor in a common-source configuration and applying at least one programming voltage pulse to a gate of the access transistor, the programming voltage pulse having a magnitude selected to limit programming current to a preselected value.

Abstract: A built-in self test (BIST) circuit and method is provided to test a first and a second DLL. The first DLL has a first delay input, a first clock input disposed to receive a clock input signal, and a first clock output that provides a first clock output signal delayed in comparison with the clock input signal. The second DLL has a second delay input, a second clock input disposed to receive the clock input signal, and a second clock output signal delayed in comparison with the clock input signal. The BIST circuitry provides a first delay amount over the first delay input creating a start offset between the first and second clock output signals. If the first DLL is functioning properly the start offset between the output signals should remain unchanged even after the BIST circuitry provides an additional common delay amount to the first and second delay inputs.

Abstract: A semiconductor memory device includes: a memory array including a plurality of memory cells, the memory cells being in any of a high resistance state (HRS) and a low resistance state (LRS); a reference array including a plurality of reference cells, the memory cells and the reference cells having the same impedance-temperature relationship, the reference cells being in a middle resistance state between HRS and LRS; an average circuit configured for averaging respective reference currents from the reference cells of the reference array into an average reference current; and a comparator configured for comparing a plurality of respective memory currents from the memory cells of the memory array with the average reference current to obtain a plurality of output data of the memory cells of the memory array and to determine respective impedance states of the memory cells of the memory array.

Abstract: A signal processing circuit may be provided. The signal processing circuit may include a mask generation circuit configured to output a mask signal in response to an internal control signal and masking information; and a masking circuit configured to mask the internal control signal in response to the mask signal, and output a masked control signal, wherein the mask generation circuit resets the mask signal in response to an internal reset signal, regardless of a pause polarity of the internal control signal.

Abstract: A circuit assembly is provided for producing a test voltage for testing a test object, comprising two high voltage sources for producing a positive and negative high voltage of variable amplitude at respective outputs thereof and a high voltage switch assembly, which is arranged between the outputs of the two high voltage sources and the test object and which can be switched suitably in order to successively charge and discharge the test object, wherein furthermore a closed-loop controller is provided, which measures the present test voltage on the test object and acts on the high-voltage switch assembly in order to charge and discharge the test object in a defined manner in dependence on the measured test voltage.

Abstract: One semiconductor device includes a clock signal buffer circuit which, in response to activation of a chip selection signal (CS_n), starts generation of an internal clock signal PCLKAR, and internal circuits which operate in synchronization with the internal clock signal PCLKAR. The clock signal buffer circuit suspends generation of the internal clock signal PCLKAR at a second timing if command signals (CA0 to CA9) indicate read commands, and suspends generation of the internal clock signal PCLKAR at a first timing which is earlier than the second timing if the command signals (CA0 to CA9) indicate active commands. According to one embodiment, an internal clock signal is generated only for periods necessary in accordance with external command signals.

Abstract: A semiconductor memory device includes a first address input block which receives first information applied from an exterior as a corresponding normal address in a normal mode and receives the first information as a test clock in a test mode, a second address input block which receives second information applied from an exterior as the corresponding normal address in the normal mode and receives the second information as a test code in the test mode, and a test signal generation block which synchronizes the test code with the test clock in the test mode and generates a test command, a test address and a test data in response to a synchronized test code.

Abstract: The present invention provides detergent compositions, essentially free of peroxygen or chlorine bleach compounds, containing one or more surfactants, one or more builders, one or more enzymes and one or more low MW (e.g., 0.8-25 kDa) polyethyleneimine (PEI) polymers or salts thereof, and methods of producing such compositions. The compositions of the invention provide certain benefits in cleaning of textiles (particularly fabrics including clothing), hard surfaces and dishware and utensils, including enhanced removal of certain difficult-to-remove stains such as chocolate pudding and grass, as well as of polyphenolic stains such as cherry juice, blueberry juice, red wine, tea and coffee. The invention also provides methods of using these compositions in laundry, hard surface cleaning and dishwashing applications.

Abstract: A built-in self test (BIST) circuit and method is provided to test a first and a second DLL. The first DLL has a first delay input, a first clock input disposed to receive a clock input signal, and a first clock output that provides a first clock output signal delayed in comparison with the clock input signal. The second DLL has a second delay input, a second clock input disposed to receive the clock input signal, and a second clock output signal delayed in comparison with the clock input signal. The BIST circuitry provides a first delay amount over the first delay input creating a start offset between the first and second clock output signals. If the first DLL is functioning properly the start offset between the output signals should remain unchanged even after the BIST circuitry provides an additional common delay amount to the first and second delay inputs.

Abstract: Disclosed herein is a semiconductor device that includes: a frequency dividing circuit dividing a frequency of a first clock signal to generate second clock signals that are different in phase from one another; a multiplier circuit multiplying the second clock signals to generate a third clock signal; a data input/output terminal; data buses; and a data input/output circuit coupled between the data input/output terminal and the data buses. The data input/output circuit includes a data output circuit and a data input circuit. The data output circuit outputs read data supplied in parallel from the data buses to the data input/output terminal in serial in synchronism with the third clock signal. The data input circuit outputs write data supplied in serial from the data input/output terminal to the data buses in parallel in synchronism with a predetermined one of the second clock signals.

Abstract: A method for reading data from a plurality of DRAM devices connected to common command, address, and data busses. A clock signal is provided to the plurality of DRAM devices. A read command and address to the plurality of DRAM devices on the command and address busses in synchronization with the clock signal. A read clock signal is provided to the plurality of DRAM devices to initiate a read operation in one of the plurality of DRAM devices that is selected by the address. The one DRAM device delays the read clock signal by an amount based on a speed of the one of the plurality of DRAM devices to generate. First delayed read clock and second delayed read clock signals are provided. The read data is received on the data bus in synchronization with the second delayed read clock signal.

Abstract: A memory system and method uses stacked memory device dice coupled to each other and to a logic die. The logic die may include a timing correction system that is operable to control the timing at which the logic die receives signals, such as read data signals, from each of the memory device dice. The timing correction controls the timing of the read data or other signals by adjusting the timing of respective strobe signals, such as read strobe signals, that are applied to each of the memory device dice. The memory device dice may transmit read data to the memory device at a time determined by when it receives the respective strobe signals. The timing of each of the strobe signals is adjusted so that the read data or other signals from all of the memory device dice are received at the same time.

Abstract: In an approach for processing a circuit design by a programmed processor, a placed circuit design that has been placed on programmable resources of a programmable integrated circuit (IC) is input. A critical path is determined from a first sequential element to a second sequential element assigned to the placed circuit design. A first clock buffer that provides a clock signal to the first and second sequential elements is determined, and an unused clock buffer is selected based on proximity to the first sequential element. The circuit design is modified to include the unused clock buffer as a second clock buffer coupled to receive a clock signal in parallel with the first clock buffer and to provide a clock signal to the first sequential element.

Abstract: A clock mode configuration circuit for a memory device is described. A memory system includes any number of memory devices serially connected to each other, where each memory device receives a clock signal. The clock signal can be provided either in parallel to all the memory devices or serially from memory device to memory device through a common clock input. The clock mode configuration circuit in each memory device is set to a parallel mode for receiving the parallel clock signal, and to a serial mode for receiving a source synchronous clock signal from a prior memory device. Depending on the set operating mode, the data input circuits will be configured for the corresponding data signal format, and the corresponding clock input circuits will be either enabled or disabled. The parallel mode and the serial mode is set by sensing a voltage level of a reference voltage provided to each memory device.

Abstract: A semiconductor memory apparatus includes an enable signal generation unit configured to be inputted with a plurality of clocks which have different phases, and generate a plurality of enable signals; and a plurality of sampling units configured to output input data as sampling data in response to respective pairs of clocks of the plurality of clocks and respective ones of the plurality of enable signals.

Abstract: A method of calibrating a data signal receiver configured to receive a multi-bit data signal and an associated data strobe signal, wherein transitions of the data strobe signal indicate sample points for the multi-bit data signal.

Abstract: A tracking circuit in a memory macro includes a data line, a first tracking cell, and a plurality of transistors. The first tracking cell is electrically coupled to the data line. The plurality of transistors is electrically coupled to the data line. The plurality of transistors is configured to cause a delay on a transition of a signal of the data line based on a delay current. The signal of the data line is configured for use in generating a signal of a control line of a memory cell of the memory macro.

Abstract: A semiconductor memory device includes a delay locked loop configured to generate a delay locked loop (DLL) clock signal by delaying an external clock signal by a first delay time and generate a feedback clock signal by delaying the DLL clock signal by the second delay time, wherein the first delay time corresponds to a phase difference between the external clock signal and the feedback clock signal and an output enable control circuit configured to generate an output enable signal in response to CAS latency information and the first and second delay times after the delay locked loop performs a locking operation.

Abstract: A method is provided for relaying data to a memory array operating in synchronization with a clock signal having a first transition edge. A data strobe signal having a second transition edge corresponding to the first transition edge is provided. A first signal is provided. The data is latched into the first signal at a first time point lagged behind the first transition edge by a first time interval until a second time point in response to the first transition edge for relaying the data of the first signal to the memory array when the second transition edge appears earlier than the first transition edge.

Abstract: An embodiment of the invention provides a memory controller for controlling a memory. The memory controller comprises a pulse width modulation module, a voltage comparator and a duty cycle calibration device. The pulse width modulation module is suitable for receiving a clock signal to generate a first voltage. The voltage comparator is suitable for receiving and comparing a reference voltage with the first voltage to output a comparison signal. The duty cycle calibration device is suitable for adjusting a duty cycle of the clock signal according to the comparison signal.

Abstract: A device includes a control circuit that triggers a first operation every time a specific signal is supplied thereto, and that triggers a second operation in place of the first operation in response to the first specific signal supplied after the number of the first operation performed has reached a predetermined number.

Abstract: Such a device is disclosed that includes a clock generation circuit generating a first clock signal and having an output node, and a drive circuit coupled to the output node of the clock generation circuit. The clock generation circuit outputs the first clock signal from the output node to the drive circuit in a clock output mode, fixes a potential of the output node to a first level in a first clock stop mode, and fixes the potential of the output node to a second level that is different from the first level in a second clock stop mode.

Abstract: A Random Access Memory (RAM) and method of using the same are disclosed. The RAM includes a plurality of memory cells arranged in columns and in rows with each memory cell coupled to at least one word line and at least one bit line. The RAM includes a plurality of switches with at least one of the switches coupled between two of the memory cells to allow data to be copied from one of the two memory cells to the other of the two memory cells. In another aspect, the two memory cells can be considered a dual bit cell that contains a copying mechanism. There are two interleaved memory planes, assembled from bit cells that contain two bits of information. One bit is the primary bit that corresponds to the normal RAM bit. The second bit is able to receive a copy and hold the primary value. When the copying mechanism is over, the two memory planes may act as two completely independent structures.

Abstract: Data paths, memories, and methods for providing data from memory are disclosed. An example read data path includes a delay path, and a clocked data register. The data path has a data propagation delay and is configured to receive data and propagate the data therethrough. The delay path is configured to receive a clock signal and provide a delayed clock signal having a delay relative to the clock signal that models the data propagation delay. The clocked data register is configured to clock in data responsive at least in part to the delayed clock signal. The clocked data register is further configured to clock out data responsive at least in part to the clock signal.

Abstract: A parallel-serial conversion circuit includes an adjustment circuit that receives a parallel input signal having a plurality of bits and generates and outputs a parallel output signal having a plurality of bits. A conversion circuit coupled to the adjustment circuit generates a plurality of clock signals having mutually different phases with respect to a reference clock signal on the basis of the reference clock signal and serially selects the plurality of bits of the parallel output signal in accordance with the generated plurality of clock signals to convert the parallel output signal to serial 1-bit output signals. The adjustment circuit adjusts the output timing of each of the plurality of bits of the parallel output signal in time unit of half of one cycle of the reference clock signal.

Abstract: A semiconductor memory device includes an internal clock generation unit configured to generate an internal clock including periodic pulses during a period of a test mode; a DQ information signal generation block configured to generate DQ information signals which are sequentially enabled, in response to the internal clock; and a data output block configured to output the DQ information signals to DQ pads during a period of the test mode.

Abstract: A driver circuit includes pull-up and pull-down drivers driven by separate pre-drivers operating between different voltage rails. Data signals driving the pull-up driver and the pull-down driver are synchronized, and the pull-up driver and the pull-down driver are coupled together to produce an output signal having a voltage swing based on both the pull-up driver and the pull-down driver.

Abstract: A memory includes a self-timed column imitating a bitline loading, a self-timed row imitating a self-timed word-line, a self-timed bitcell performing a dummy write in a write cycle, a writer driver coupled to the self-timed bitcell for an actual write, and an edge detection circuit coupled to the self-timed bitcell for tracking a write cycle time.

Abstract: Memory circuitry includes memory components operable in response to first edges of an internal clock. The memory circuitry also includes internal clock generating circuitry to generate the internal clock in response to a system clock. The first edges of the internal clock are generated in response to both a rising and a falling edge of the system clock.

Abstract: A system and method for modifying a hidden-refresh rate for dynamic memory cells includes monitoring a control signal from a processor and performing a hidden-refresh of dynamic data at a first refresh rate when the control signal is asserted. The dynamic data is refreshed at a second refresh rate when the control signal is deasserted for a predetermined duration. A hidden-refresh controller couples to an array of dynamic memory cells during a hidden-refresh of the array of dynamic memory cells. The hidden-refresh controller is further configured to monitor a control signal identifying a request from a processor at a memory device and refresh the dynamic data at a first refresh rate when the control signal is asserted. The hidden-refresh controller is further configured to refresh the dynamic data at a second refresh rate when the control signal is deasserted for a predetermined duration.

Abstract: A semiconductor device includes: two level shift circuits having substantially the same circuit configuration; an input circuit that supplies complementary input signals to the level shift circuits, respectively; and an output circuit that converts complementary output signals output from the level shift circuits into in-phase signals and then short-circuits the in-phase signals. According to the present invention, the two level shift circuits having substantially the same circuit configuration are used, and the complementary output signals output from the level shift circuits are converted into in-phase signals before short-circuited. This avoids almost any occurrence of a through current due to a difference in operating speed between the level shift circuits.

Abstract: Disclosed herein is a device that includes: a frequency division circuit that divides a frequency of a first clock signal to generate a second clock signal; a first logic circuit that receives a first chip select signal and the second clock signal to generate a second chip select signal; and a command generation circuit that is activated based on the second chip select signal, and generates a second command signal based on a first command signal.

Abstract: An operating method of a semiconductor device may comprise monitoring error handling information corresponding to an address of a semiconductor memory device, setting a refresh period for the address considering the error handling information and requesting a refresh request for the address.

Abstract: A clock synchronization circuit includes a delay-locked loop (DLL) and a delay-locked control unit. The DLL is configured to generate an output clock signal by delaying an input clock signal by a delay time, and to execute a delay-locking operation in which the delay time is adjusted to a locked state according to a comparison between the output clock signal and the input clock signal.

Abstract: An integrated circuit with memory elements is provided. The memory elements may be single-port memory cells that are used to provide multiport memory functionality. The integrated circuit may include an arbitration circuit operable to receive memory access requests from at least first and second request generators. The arbitration circuit may be configured to operate in a synchronous mode and an asynchronous mode. The arbitration circuit operating in the synchronous mode may perform port selection based on a predetermined logic table. The arbitration circuit operating in the asynchronous mode may execute a memory request as soon as it is received by the arbitration circuit. Requests received while a current memory access is being performed may be put on hold until the current memory access has been completed.

Abstract: Integrated circuits with wireless communications circuitry having peak cancelling circuitry operable to perform crest factor reduction is provided. The peak cancelling circuitry may include a peak detection circuit, a delay circuit, and peak cancellation pulse generation circuitry. The peak cancellation pulse generation circuitry may include multiple pulse generation blocks coupled in a cascade configuration. Each pulse generation block may include a counter for providing memory address signals, a register for latching peak scaling factor information, a pulse memory block for storing a respective sub-pulse, and a multiplier for scaling the stored sub-pulse by the latched peak scaling factor. The pulse memory block may be implemented using single-port memory or dual-port memory.

Abstract: A clock mode configuration circuit for a memory device is described. A memory system includes any number of memory devices serially connected to each other, where each memory device receives a clock signal. The clock signal can be provided either in parallel to all the memory devices or serially from memory device to memory device through a common clock input. The clock mode configuration circuit in each memory device is set to a parallel mode for receiving the parallel clock signal, and to a serial mode for receiving a source synchronous clock signal from a prior memory device. Depending on the set operating mode, the data input circuits will be configured for the corresponding data signal format, and the corresponding clock input circuits will be either enabled or disabled. The parallel mode and the serial mode is set by sensing a voltage level of a reference voltage provided to each memory device.

Abstract: A semiconductor memory device includes an internal signal generation unit configured to output a column select signal and a write enable signal in response to an external address, a write circuit unit configured to output internal data corresponding to external data in response to the write enable signal, a core unit configured to store the internal data in response to the column select signal, and an output timing control unit configured to control output timings of the internal signal generation unit and the write circuit unit in response to an external command, an internal synchronization signal, and preamble related information.

Abstract: Disclosed herein is a semiconductor device having first and second operation modes. In the first operation mode, the semiconductor device deactivates a DLL circuit during a self-refresh mode. In the second operation mode, the semiconductor device intermittently activates the DLL circuit to generate an internal clock signal.

Abstract: Memory pre-decoder circuits employing pulse latch(es) for reducing memory access times, and related systems and methods are disclosed. In one embodiment, the memory pre-decoder circuit includes a memory pre-decoder configured to pre-decode a memory address input within a memory pre-decode setup path to generate a pre-decoded memory address input. Additionally, a pulse latch is provided in the memory pre-decoder circuit outside of the memory pre-decode setup path. The pulse latch samples the pre-decoded memory address input based on a clock signal and generates a pre-decoded memory address output. As such, the memory pre-decode setup path sets up the pre-decoded memory address input prior to the clock signal for the pulse latch. In this manner, the pulse latch is configured to generate a pre-decoded memory address output without increasing setup times in the memory pre-decode setup path.

Abstract: Methods and apparatuses featuring an injection-locked oscillator (ILO) are described. In some embodiments, an ILO can have multiple injection points and a free-running frequency that is capable of being adjusted based on a control signal. In some embodiments, each injection point of an ILO can correspond to a phase tuning range. In some embodiments, a circuit can include circuitry to detect a phase boundary between two adjacent phase tuning ranges. In some embodiments, a circuit can use the detected phase boundary to switch between the two adjacent phase tuning ranges.