Abstract: Systems, apparatuses, and methods related to dynamic random access memory (DRAM), such as finer grain DRAM, are described. For example, an array of memory cells in a memory device may be partitioned into regions. Each region may include a plurality of banks of memory cells. Each region may be associated with a data channel configured to communicate with a host device. In some examples, each channel of the array may include two or more data pins. The ratio of data pins per channel may be two or four in various examples. Other examples may include eight data pins per channel.

Abstract: Systems, apparatuses, and methods related to a memory device, such as a low-power dynamic random-access memory (DRAM) and an associated host device are described. The memory device and the host device can include control logic that enables the host device to transmit a burst value to the memory device, which may enable the memory device, the host, or both, to manage refresh operations during a normal operation mode or a self-refresh mode. The burst value can be transmitted to the memory device in association with a command (e.g., a command directing the memory device to enter the self-refresh mode). The burst value can specify a number of self-refresh operations to be initiated at the memory device in response to receiving the command. When the specified number of self-refresh operations are completed, regular self-refresh operations may begin, with an internal self-refresh timer counting an interval to the next self-refresh operation.

Abstract: Transmitter circuitry includes inversion circuitry, first transform circuitry, and selection circuitry. The inversion circuitry generates a first transformed data word by inverting one or more of a plurality of bits of a first data word. The first transform circuitry generates a second transformed data word by performing a first invertible operation on the first data word and a second data word. The selection circuitry selects one of the first data word, the first transformed data word, and the second transformed data word based on a first number of bit inversions between the first data word and the second data word, a second number of bit inversions between the first transformed data word and the second data word, and a third number of bit inversions between the second transformed data word and the second data word. The selection circuitry further outputs the selected data word.

Abstract: A memory device includes a data memory array, a reference memory array and a detection circuit. The reference memory array includes (N/2+1) bit lines, (N/2) source lines and reference cells, N being a positive even integer. Each row of reference cells includes a (2n?1)th reference cell and a (2n)th reference cell. The (2n?1)th reference cell includes a first terminal coupled to an nth bit line, and a second terminal coupled to an nth source line, n being a positive integer less than N/2+1. The (2n)th reference cell includes a first terminal coupled to an (n+1)th bit line, and a second terminal coupled to the nth source line. The detection circuit compares a data current outputted from the data memory array and a reference current outputted from the reference memory array to determine a data state of a memory cell.

Abstract: A memory includes read circuitry for reading values stored in memory cells. The read circuitry includes flipped voltage followers for providing bias voltages to nodes of current paths coupled to sense amplifiers during memory read operations.

Abstract: A semiconductor memory device includes first, second, third, and fourth planes, a first address bus connected to the first and third planes, a second address bus connected to the second and fourth planes, and a control circuit configured to execute a synchronous process on at least two planes in response to a first command set including a first address and a second address. The control circuit is configured to transfer the first address to the first and third planes through the first address bus, and the second address to the second and fourth planes through the second address bus, and during the synchronous process, select a first block in one of the first and third planes, based on the transferred first address and select a second block in one of the second and fourth planes, based on the transferred second address.

Abstract: A streaming engine employed in a digital data processor specifies a fixed read only data stream defined by plural nested loops. An address generator produces address of data elements. A steam head register stores data elements next to be supplied to functional units for use as operands. The streaming engine stores an early address of next to be fetched data elements and a late address of a data element in the stream head register for each of the nested loops. The streaming engine stores an early loop counts of next to be fetched data elements and a late loop counts of a data element in the stream head register for each of the nested loops.

Abstract: Described are memory modules that support different error detection and correction (EDC) schemes in both single- and multiple-module memory systems. The memory modules are width configurable and support the different EDC schemes for relatively wide and narrow module data widths. Data buffers on the modules support the half-width and full-width modes, and also support time-division-multiplexing to access additional memory components on each module in support of enhanced EDC.

Abstract: A method of operating a memory device includes receiving a duty training request, performing first training for a write path in a first period, storing a result value of the first training, performing second training for a write path in a second period, storing a result value of the second training, transmitting the result value of the first training to an external device, and receiving a duty cycle adjuster (DCA) code value corresponding to the first training result value from the external device.

Abstract: Methods, systems, and devices for a modified write voltage for memory devices are described. In an example, the memory device may determine a first set of memory cells to be switched from a first logic state (e.g., a SET state) to a second logic state (e.g., a RESET state) based on a received write command. The memory device may perform a read operation to determine a subset of the first set of memory cells (e.g., a second set of memory cells) having a conductance threshold satisfying a criteria based on a predicted drift of the memory cells. The memory device may apply a RESET pulse to each of the memory cells within the first set of memory cells, where the RESET pulse applied to the second set of memory cells is modified to decrease voltage threshold drift in the RESET state.

Abstract: Various implementations provide systems and methods for reading data from memory bit cells. An example implementation includes a read circuit that provides a single-ended output from a sensing stage. The single-ended output is received by a reset-set (RS) latch, which also receives a virtual bit line signal. The single-ended output and the virtual bit line signal provide complementary inputs to the RS latch, and the RS latch stores a sensed bit, and the sensed bit may be driven onto a data bus.

Abstract: Information communication circuitry, including a first integrated circuit for coupling to a second integrated circuit in a package on package configuration. The first integrated circuit comprises processing circuitry for communicating information bits, and the information bits comprise data bits and error correction bits, where the error correction bits are for indicating whether data bits are received correctly. The second integrated circuit comprises a memory for receiving and storing at least some of the information bits. The information communication circuitry also includes interfacing circuitry for selectively communicating, along a number of conductors, between the package on package configuration. In a first instance, the interfacing circuitry selectively communicates only data bits along the number of conductors.

Abstract: A method of a flash controller to be coupled between a flash memory device and a host device is provided. The flash memory device has a plurality of blocks each having a plurality of pages, and the method comprises: receiving a trim/erase/unmap command from the host device; obtaining a storage space, which is to be erased, from the trim/erase/unmap command; comparing a space size of the storage space with a threshold to determine whether the space size is larger than the threshold; and resetting valid page counts of the plurality of blocks of the flash memory device when the space size is larger than the threshold.

Abstract: A semiconductor memory device includes a memory region including a plurality of memory blocks, and suitable for outputting first and second read data from first and second memory blocks among the plurality of memory blocks based on first and second read control signals and a read address signal; a scheduler suitable for outputting a read scheduling signal based on the first and second read control signals; and an output driver suitable for outputting the first and second read data by a predetermined burst length alternately twice or more to a data pad based on a mode signal, wherein the first read data are outputted to the data pad according to a first burst sequence, and the second read data are outputted to the data pad according to a second burst sequence, based on the read scheduling signal.

Abstract: An example apparatus comprises a memory resource configured to store data and transmit data. The apparatus may further include a safety controller coupled to the memory resource configured to receive the data from the memory resource, receive latched data from an application controller, and determine whether to allow an output of commands from the application controller in response to a comparison of the data from the memory resource and the latched data from the application controller.

Abstract: Various embodiments provide a memory system architecture for heterogeneous memory technologies, which can be implemented by a memory sub-system. A memory system architecture of some embodiments can support servicing an individual command request using different (heterogeneous) memory technologies, such as different types of memory devices (e.g., heterogeneous memory devices), different types of memory device controllers (e.g., heterogeneous memory device controllers), different types of data paths (e.g., data paths with different protocols or protocol constrains), or some combination thereof. According to various embodiments, the memory system architecture uses tracking and management of multiple command responses to service a single command request from a host system.

Abstract: A method includes: receiving, by a computing device, data for storage in a dispersed storage network; writing, by the computing device, the data to a first location; generating, by the computing device, a first pointer to the first location; receiving, by the computing device, updated data that is an updated version of the data; writing, by the computing device, the updated data to a second location; generating, by the computing device, a second pointer to the second location; and deleting, by the computing device, the first pointer at a time after writing the updated data and generating the second pointer.

Abstract: An output circuit includes a first switch that outputs a positive voltage signal received via a first node when in an ON state, a second switch that outputs a negative voltage signal received via a second node when in an ON state, third and fourth switches that set the first and second nodes to a reference power supply voltage when in an ON state, a first follower circuit that generates, as a gate voltage, a voltage signal following and being in phase with a voltage signal of the first node through source follower operation and supplies the gate voltage to a gate of the first switch, and a second follower circuit that generates, as a gate voltage, a voltage signal following and being in phase with a voltage signal of the second node through source follower operation and supplies the gate voltage to a gate of the second switch.

Abstract: Techniques disclosed herein can be used to improve cross-temperature coverage of memory devices and improve memory device reliability in cross-temperature conditions. More specifically, a memory trim set can be selected from multiple candidate memory trim sets when performing a memory operation (such as a memory write operation), based on a temperature metric and a P/E cycle metric for the memory device. The candidate memory trim sets include multiple respective memory trim values (e.g., memory configuration parameters, such as program voltage step size, program pulse width, program verify level, etc., as discussed above) for performing the memory operation. The temperature metric can be indicative of a temperature of at least a region of the memory device (e.g., the entire device, a memory plane, a memory block, etc.), and the P/E cycle metric can be indicative of a number of P/E cycles performed by the memory device within a selected time interval.

Abstract: Systems, apparatuses, and methods related to dynamic random access memory (DRAM), such as finer grain DRAM, are described. For example, an array of memory cells in a memory device may be partitioned into regions. Each region may include a plurality of banks of memory cells. Each region may be associated with a data channel configured to communicate with a host device. In some examples, each channel of the array may include two or more data pins. The ratio of data pins per channel may be two or four in various examples. Other examples may include eight data pins per channel.

Abstract: A low-power system-on-chip includes an originating controller, a fabric, and a power controller. The originating controller is configured to initiate a memory transaction request including a source address. The fabric includes an arbiter configured to receive the memory transaction request and determine a first memory device associated with the memory transaction request. The power controller is configured to selectively change a first memory bank of the first memory device from a first power mode to a second power mode based at least in part on the source address. The fabric is configured to perform a memory operation by (a) receiving stored data from memory storage locations corresponding to the source address when the memory transaction request includes a read request, and (b) sending data included in the memory transaction request to the memory storage locations when the memory transaction request includes a program or a write request.

Abstract: A data storage device including, in one implementation, a NAND memory and a controller. The NAND memory includes a read/write circuit configured to determine and store initial physical column addresses for each plane included in the NAND memory. The controller is configured to send a read-transfer command and a one-byte address to the NAND memory. The read/write circuit is also configured to retrieve a first initial physical column address from the initial physical column addresses stored in the NAND memory after the NAND memory receives the one-byte address from the controller. The first initial physical column address is associated with a die address and a plane address included in the one-byte address. The read/write circuit is further configured to retrieve a first set of data stored at the first initial physical column address. The read/write circuit is also configured to output the first set of data to the controller.

Abstract: A memory system includes an address mapping circuit. The address mapping circuit receives an input memory address having a first set of address bits. The address mapping circuit applies a logic function to the input memory address to generate a mapped memory address. The logic function uses at least a subset of the first set of address bits in two separate operations that respectively determine two portions of the mapped memory address.

Abstract: A nonvolatile memory device includes a memory cell array and a row decoder. The memory cell array includes a plurality of mats. A first cell string of first mat is connected to a plurality of first word-lines, a first bit-line and a first string selection line. A second cell string of second mat is connected to a plurality of second word-lines, a second bit-line and a second string selection line. Each of the first and second cell strings includes a ground selection transistor, memory cells, and a string selection transistor coupled in series. The row decoder applies a first voltage to a third word-line among the plurality of first and second word-lines for a first period of time in a single mat mode and to apply a second voltage to the third word-line for a second period of time longer than the first period of time in a multi-mat mode.

Abstract: A method for execution by a storage unit of a dispersed storage network (DSN) includes receiving a data slice for storage. A first bin that includes the data slice is generated and stored in a first location of a memory device of the storage unit, and a bin pointer that includes a reference to the first location is generated. A revision of the data slice is later received, and a second bin that includes the revised data slice is generated and stored in a second location of the memory device. A modified bin pointer is generated by editing the bin pointer to include a reference to the second location. A back pointer that references the first location is generated in response to commencing writing of the revised data slice. The back pointer is deleted in response to determining that the revised data slice has reached a finalized write stage.

Abstract: An apparatus that includes a word line with a plurality of memory cells that are able to be programmed to a plurality of data states is provided. The apparatus further includes a programming circuit. The programming circuit is configured to program count the number of verify pulses at a first verify voltage level that are performed during programming of the memory cells to a first programmed data state to determine a verify count. During programming to a second data state, the programming circuit applies a plurality of programming pulses at increasing voltage levels and a plurality of verify pulses at a second verify voltage level to the selected word line. During programming of the memory cells to the second programmed data state, the number of verify pulses is one fewer than the number of programming pulses.

Abstract: A device and method for facilitating orthogonal data transposition during data transfers to/from a processing array and a storage memory since the data words processed by the processing array (using computational memory cells) are stored orthogonally to how the data words are stored in storage memory. Thus, when data words are transferred between storage memory and the processing array, a mechanism orthogonally transposes the data words.

Abstract: A novel storage device and a novel semiconductor device are provided. In the storage device, a cell array including a plurality of memory cells is stacked above a control circuit, and the cell array operates separately in a plurality of blocks. Furthermore, a plurality of electrodes are included between the control circuit and the cell array. The electrode is provided for a corresponding block to overlap with the block, and a potential of the electrode can be changed for each block. The electrode has a function of aback gate of a transistor included in the memory cell, and a potential of the electrode is changed for each block, whereby the electrical characteristics of the transistor included in the memory cell can be changed. Moreover, the electrode can reduce noise caused in the control circuit.

Abstract: Embodiments of the disclosure are drawn to apparatuses and methods for analog row access tracking. A plurality of unit cells are provided, each of which contains one or more analog circuits used to track accesses to a portion of the wordlines of a memory device. When a wordline in the portion is accessed, the unit cell may update an accumulator voltage, for example by adding charge to a capacitor. A comparator circuit may determine when one or more accumulator voltages cross a threshold (e.g., a reference voltage). Responsive to the accumulator voltage crossing the threshold, an aggressor address may be loaded in a targeted refresh queue, or if the aggressor address is already in the queue, a priority flag associated with that address may be set. Aggressor addresses may be provided to have their victims refreshed in an order based on the number of set priority flags.

Abstract: Systems and methods are disclosed for secure control flow prediction. Some implementations may be used to eliminate or mitigate the Spectre-class of attacks in a processor. For example, an integrated circuit (e.g., a processor) for executing instructions includes a control flow predictor with entries that include respective indications of whether the entry has been activated for use in a current process, wherein the integrated circuit is configured to access the indication in one of the entries that is associated with a control flow instruction that is scheduled for execution; determine, based on the indication, whether the entry of the control flow predictor associated with the control flow instruction is activated for use in a current process; and responsive to a determination that the entry is not activated for use in the current process, apply a constraint on speculative execution based on control flow prediction for the control flow instruction.

Abstract: A semiconductor system in accordance with an embodiment includes a module controller and a plurality of semiconductor chips configured to receive logical addresses from the module controller. The semiconductor system also includes a plurality of scramble circuits, with a scramble circuit provided for each of the plurality of semiconductor chips, configured to receive the logical addresses and to output corresponding physical addresses for the plurality of semiconductor chips. Each scramble circuit of the plurality of scramble circuits is configured to receive the same logical address and to output a corresponding physical address different from the physical addresses output by the other scramble circuits of the plurality of scramble circuits.

Abstract: A volatile memories includes an address scrambler configured to scramble at least a portion of a received addresses to obscure address topography of a memory array using at least one scramble key. The at least one scramble key is generated by a random number generator. The address scrambler is configured to perform logical bitwise operations using between a received address and the at least one scramble key to generate the scrambled row address.

Abstract: Various embodiments described herein provide for selectively sending a read command, such as a speculative read (SREAD) command in accordance with a Non-Volatile Dual In-Line Memory Module-P (NVDIMM-P) memory protocol, to a memory sub-system based on a predicted row status of a given memory device (e.g., random access memory (RAM)-based cache) of the memory sub-system.

Abstract: Systems and methods are disclosed, including, in a storage system comprising control circuitry and a memory array having multiple groups of memory cells, storing a first physical-to-logical (P2L) data structure for a first physical area of a first group of memory cells in a second physical area of the first group of memory cells, such as when resuming operation from a low-power state, including an asynchronous power loss (APL). The first group of memory cells can include a super block of memory cells. A second P2L data structure for the second physical area of the first group of memory cells can be stored, such as in a metadata area of the second physical area, and an address of the first P2L data structure can be stored in the second P2L data structure.

Abstract: A memory management unit comprises an interface for receiving an address translation request from a device, the address translation request specifying a virtual request to be translated. Translation circuitry translates the virtual address into an intermediate address different from a physical address directly specifying a memory location. The interface provides an address translation response specifying the intermediate address to the device in response to the address translation request. This improves security by avoiding exposure of physical addresses to the device.

Abstract: A memory access system includes a memory that is abstracted into data structures. The memory access system further includes a processor that generates an access request for accessing the abstracted memory by way of a structure access circuit of the memory access system. As the memory is abstracted into the data structures and the processor accesses the abstracted memory using the data structures, an addressing capability of the processor is extended. Further, the computing overhead of the processor is reduced, as the processor performs various memory operations by accessing the memory by way of the structure access circuit.

Abstract: A smart vehicle system is disclosed, which relates to technology for increasing efficiency of a vehicle-embedded memory. The smart vehicle system includes a host and a storage device. The host selects any one of a first mode and a second mode according to operation, process or workload of a vehicle, and transmits and receives data through different channels in response to the first mode and the second mode. The storage device stores the data received through different channels in the first core circuit and the second core circuit, or reads the data stored in the first core circuit and the second core circuit. The storage device executes different operations in the first mode and the second mode in a manner that an operation to be executed in the first mode is different from an operation to be executed in the second mode.

Abstract: A memory device and an access method applied to the memory device are provided. The memory device is electrically connected to a host, and the memory device includes a memory circuit and a memory controller. The memory circuit includes a first memory array and a second memory array. The first memory array and the second memory array respectively provide a first physical space and a second physical space. The memory controller receives an access command from the host. The memory controller performs the access command to the first physical space when the access command is a first type of command, and the memory controller performs the access command to the second physical space when the access command is a second type of command.

Abstract: A method of writing data into a memory device comprising utilizing a pipeline to process write operations of a first plurality of data words addressed to a plurality of memory banks, wherein each of the plurality of memory banks is associated with a counter. The method also comprises writing a second plurality of data words and associated memory addresses into an error buffer, wherein the error buffer is associated with the plurality of memory banks and wherein further each data word of the second plurality of data words is either awaiting write verification associated with a bank from the plurality of memory banks or is to be re-written into a bank from the plurality of memory banks. Further, the method comprises maintaining a count in each of the plurality of counters for a respective number of entries in the error buffer corresponding to a respective memory bank.

Abstract: A storage device includes a main storage and a storage controller to control the main storage. The main storage stores data and includes a plurality of nonvolatile memory devices. The storage controller loads at least one of (a) at least a portion of mapping tables and (b) at least one of a portion of directories to a host memory buffer included in an external host device, based on at least one of a size of the host memory buffer and locality information associated with a data access pattern of the host device. The mapping tables are stored in the nonvolatile memory devices and the mapping tables indicate a mapping relationship between a physical address and a logical address of corresponding ones of the nonvolatile memory devices. The directories store address information of the mapping tables.

Abstract: Various embodiments comprise methods and related apparatuses formed from those methods for placing at least portions of peripheral circuits under a DRAM memory array, where the peripheral circuits are used to control an operation of the DRAM memory array. In an embodiment, a memory apparatus includes a DRAM memory array and at least one peripheral circuit formed under the DRAM memory array, where the at least one peripheral circuit includes at least one circuit type selected from sense amplifiers and sub-word line drivers. Additional apparatuses and methods are also disclosed.

Abstract: Some memory circuitry comprises a stack of multiple tiers individually comprising memory cells individually comprising an elevationally-extending transistor. The tiers individually comprise multiple access lines that individually electrically couple together a row of the memory cells in that individual tier. The tiers individually comprise access-line-driver circuitry comprising an elevationally-extending transistor.

Abstract: A control device of the invention for a semiconductor memory device comprising an interface conforming to JEDEC standard of DDRx-SDRAM or LPDDRx-SDRAM, comprises banks, a read/write control circuit, and a transfer control circuit. Each bank comprises subarrays. Each subarray comprises memory cells arranged along bit lines and word lines. The read/write control circuit controls reading of data from and writing of data to the semiconductor memory device. The transfer control circuit controls data transfer inside the semiconductor memory device and sets to enable an additional transfer command not specified in the JEDEC standard and a transfer command for writing data, read from a transfer source memory cell, to a transfer destination memory cell without passing outside the semiconductor memory device by transmitting a first signal value not used in the JEDEC standard to the semiconductor memory device via at least one signal line of the interface.

Abstract: A Basic Input/Output System (BIOS)/Unified Extensible Firmware Interface (UEFI) on a Self-Service Terminal (SST) loads ATM resources into volatile memory of the SST during a boot of the SST in a predefined order. Each time, during an SST boot, where the order is attempting to be changed; a credential is required to change the predefined order and the credential has to be authenticated before the predefined order is changed during the SST boot.

Abstract: A security system includes a physical unclonable function circuit, a write-in protection circuit, a memory, and a readout decryption circuit. The physical unclonable function circuit provides a plurality of random bit strings. The write-in protection circuit receives a write-in address and original data, and includes an address scrambling unit. The address scrambling unit generates a scrambled address by scrambling a write-in address according to a random bit string provided by the physical unclonable function circuit. The memory stores the storage data corresponding to the original data according to the scrambled address. The readout decryption circuit reads out the storage data from the memory according to the write-in address to derive the original data.

Abstract: In one embodiment, a cache memory includes: a plurality of data banks, each of the plurality of data banks having a plurality of entries each to store a portion of a cache line distributed across the plurality of data banks; and a plurality of tag banks decoupled from the plurality of data banks, wherein a tag for a cache line is to be assigned to one of the plurality of tag banks. Other embodiments are described and claimed.

Abstract: An operation method of a memory device which includes a plurality of memory cells connected to a plurality of word lines includes receiving a first activate command from an external device, receiving at least one operation command from the external device after the first activate command is received, receiving a precharge command after receiving the at least one operation command, and receiving a second activate command from the external device after the precharge command is received. When the at least one operation command does not include a write command, the second activate command is received after a first precharge reference time elapses from a time at which the precharge command is received. When the at least one operation command includes the write command, the second activate command is received after a second precharge reference time elapses from the time at which the precharge command is received.

Abstract: The disclosed embodiments relate to a system that supports dynamic bursts to facilitate frequency-agile communication between a memory controller and a memory device. During operation, the system monitors a reference clock signal received at an interface between the memory device and the memory controller. Upon detecting a frequency change in the reference clock signal from a fullrate to a subrate, the interface operates in a burst mode, wherein data is communicated through bursts separated by intervening low-power intervals during which portions of the interface are powered down.

Abstract: Embodiments of the present disclosure pertain to switch matrix circuit including a data permutation circuit. In one embodiment, the switch matrix comprises a plurality of adjacent switching blocks configured along a first axis, wherein the plurality of adjacent switching blocks each receive data and switch control settings along a second axis. The switch matrix includes a permutation circuit comprising, in each switching block, a plurality of switching stages spanning a plurality of adjacent switching blocks and at least one switching stage that does not span to adjacent switching blocks. The permutation circuit receives data in a first pattern and outputs the data in a second pattern. The data permutation performed by the switching stages is based on the particular switch control settings received in the adjacent switching blocks along the second axis.

Abstract: According to one embodiment, a memory system, comprises a non-volatile memory; a first memory and a second memory; and a memory controller configured to receive a first logical address from a host in a first reading, read a first address conversion table corresponding to the first logical address from the non-volatile memory, and store, in the non-volatile memory, a second address conversion table of a first state stored in the first memory in a case where the first logical address corresponds to a second logical address stored in the second memory.