Abstract: A variety of applications can include systems and methods that control a memory size of a changelog in a storage device, where the changelog is implemented to correlate virtual page addresses to physical addresses in one or more memory devices. The memory size can be controlled by an allocation schema for a scalable memory area for the changelog in the storage device. The allocation schema can include using bitmaps, lists linked to the bitmaps, and a counter to count bits asserted in the bitmaps such that the allocation of memory space in the storage device can depend on usage rather than allocating a large memory space for all possible correlations of virtual page addresses to physical addresses.

Abstract: Techniques for scheduling memory operations are disclosed in which alternate read/write commands within a multi-bank memory operation are delayed beyond a minimum timing parameter in order to increase memory data bus utilization. The remaining read/write commands are not delayed beyond the minimum timing parameter. Every other clock cycle (e.g., even clock cycles) within the memory operation is reserved for activate commands, while other commands such as sync and read/write are scheduled on the intervening clock cycles (e.g., odd clock cycles). For memory devices for which a sync command (which causes a clock of the memory data bus to start) is to precede a corresponding read/write command by a number of clock cycles that would place it in a cycle reserved for activate commands, a particular operation mode is disclosed in which the memory device internally delays a received sync command.

Abstract: Embodiments of a physical unclonable function (PUF) device and a method for generating helper data for a PUF device with an array of cells are disclosed. In an embodiment, the PUF device comprises an array of cells, wherein each cell of the array generates an output signal, a reliable cell group detector coupled to the array of cells to find reliable groups of cells in the array of cells having sufficient reliable cells and output addresses of the reliable groups of cells, and a storage device coupled to the reliable cell group detector to store the addresses of the reliable groups of cells to be used as helper data for PUF response operations.

Abstract: A method is disclosed for accessing a primary account maintained in a cloud environment, receiving information defining a structure of the primary account, the structure including a plurality of assets, and deploying, inside the primary account or a secondary account for which trust is established with the primary account, at least one ephemeral scanner configured to scan at least one block storage volume and output metadata defining the at least one block storage volume, the output excluding raw data of the primary account. The method further comprises receiving a transmission of the metadata from the at least one ephemeral scanner, excluding raw data of the primary account, analyzing the metadata to identify cybersecurity vulnerabilities, correlating each of the cybersecurity vulnerabilities with one of the assets, and generating a report correlating the cybersecurity vulnerabilities with the assets. Systems and computer-readable media implementing the method are also disclosed.

Abstract: A semiconductor memory device includes data pads, wordlines, memory cells, global input-output lines, and intra-bank switches. The wordlines extend in a row direction and are arranged in a column direction. The wordlines are grouped into wordline groups such that each wordline group includes wordlines adjacent in the column direction. A selection wordline is selected based on a row address. The global input-output lines extend in the column direction and are arranged in the row direction to transfer data between the data pads and the memory cells. The global input-output lines are cut into line segment groups respectively corresponding to the wordline groups. The intra-bank switches control, based on the row address, electrical connections between two line segment groups among the line segment groups, where the two line segment groups are adjacent in the column direction and included in one memory bank.

Abstract: An electronic device includes a target address generation circuit configured to generate a counting signal by counting the number of times each logic level combination of an address is input by performing an internal read operation and an internal write operation during an active operation, configured to store the counting signal as the storage counting signal when the counting signal is counted more than a storage counting signal that is stored therein, and configured to store the address, corresponding to the counting signal, as a target address; and a refresh control circuit configured to control a smart refresh operation on the target address.

Abstract: Memory devices and systems with post-packaging master die selection, and associated methods, are disclosed herein. In one embodiment, a memory device includes a plurality of memory dies. Each memory die of the plurality includes a command/address decoder. The command/address decoders are configured to receive command and address signals from external contacts of the memory device. The command/address decoders are also configured, when enabled, to decode the command and address signals and transmit the decoded command and address signals to every other memory die of the plurality. Each memory die further includes circuitry configured to enable, or disable, or both individual command/address decoders of the plurality of memory dies. In some embodiments, the circuitry can enable a command/address decoder of a memory die of the plurality after the plurality of memory dies are packaged into a memory device.

Abstract: The method processes a series of events received asynchronously from an array of pixels of an event-based light sensor. Each event of the series comprises an address of a pixel of the array from which the event is received, and an attribute value depending on incident light sensed by that pixel. The method comprises: storing a data structure in a first memory, the data structure including event data for at least some of the pixels of the array, the event data for a pixel being related to at least one event most recently received from said pixel; during a timeslot, building, in a second memory having a faster access than the first memory, a map for the pixels of the array as the events of the series are received, the map including an information element for each pixel of the array, the information element having one of a plurality of values including a nil value indicating an absence of event during the timeslot; and updating the data structure after the timeslot using the map.

Abstract: A static random access memory (SRAM) cell includes substrate, a first semiconductor fin, a first gate structure, a second semiconductor fin, and a second gate structure. The substrate has a first p-well and an n-well bordering the first p-well. The first semiconductor fin extends within the first p-well. The first gate structure extends across the first semiconductor fin and forms a first write-port pull-down transistor with the first semiconductor fin. The second semiconductor fin extends within the n-well. The second gate structure extends across the second semiconductor fin and forms a first write-port pull-up transistor with the second semiconductor fin. A channel region of the first write-port pull-down transistor has a higher doping concentration than a channel region of the first write-port pull-up transistor.

Abstract: A level shifter receives an input signal in a first power domain and generates a corresponding output signal in a second power domain. The transition time of the output signal may be longer during a low-to-high transition than during a high-to-low transition or vice versa. The level shifter may provide two outputs, wherein one of the two outputs has a shorter transition time during a high-to-low transition and the other output has a shorter transition time during a low-to-high transition. By using an inverter on the second output, two non-inverted outputs are generated with different transition times. A ramp selection circuit is used to select between the first output and the inverted second output. The ramp selection circuit selects the output with the shortest transition time.

Abstract: A dynamic random access memory (DRAM) component (e.g., module or integrated circuit) can be configured to have multiple rows in the same bank open concurrently. The controller of the component divides the address space of the banks into segments based on row address ranges. These row address ranges do not necessarily correspond to row address ranges of the bank's subarrays (a.k.a. memory array tiles—MATs). When a command is sent to open a row, the controller marks a plurality of the segments as blocked. The controller thereby tracks address ranges in a bank where it will not open a second row unless and until the first row is closed. The memory component may store information about which, and how many, segments should be blocked in response to opening a row. This information may be read by the controller during initialization.

Abstract: A memory device and an operation method for the memory device are provided. The memory device includes a memory block, a row decoder and a control circuit. The memory block includes a plurality of memory cells, wherein a row of memory cells in the memory block are coupled to at least one word line, and a column of memory cells in the memory block are coupled to a bit line and a multiplexer. The row decoder is coupled to the memory block and configured for the row of memory cells. The control circuit is coupled to the row decoder and indicates which word line, bit line and multiplexer is enabled.

Abstract: A storage device is provided including an interface circuit configured to receive application information from a host; a field programmable gate array (FPGA); a neural processing unit (NPU); and a central processing unit (CPU) configured to select a hardware image from among a plurality of hardware images stored in a memory using the application information, and reconfigure the FPGA using the selected hardware image. The NPU is configured to perform an operation using the reconfigured FPGA.

Abstract: Systems, apparatuses, and methods related to dynamic random access memory (DRAM), such as finer grain DRAM, are described. For example, an array of memory cells in a memory device may be partitioned into regions. Each region may include a plurality of banks of memory cells. Each region may be associated with a data channel configured to communicate with a host device. In some examples, each channel of the array may include two or more data pins. The ratio of data pins per channel may be two or four in various examples. Other examples may include eight data pins per channel.

Abstract: Systems, apparatuses, and methods related to a memory device, such as a low-power dynamic random-access memory (DRAM) and an associated host device are described. The memory device and the host device can include control logic that enables the host device to transmit a burst value to the memory device, which may enable the memory device, the host, or both, to manage refresh operations during a normal operation mode or a self-refresh mode. The burst value can be transmitted to the memory device in association with a command (e.g., a command directing the memory device to enter the self-refresh mode). The burst value can specify a number of self-refresh operations to be initiated at the memory device in response to receiving the command. When the specified number of self-refresh operations are completed, regular self-refresh operations may begin, with an internal self-refresh timer counting an interval to the next self-refresh operation.

Abstract: Transmitter circuitry includes inversion circuitry, first transform circuitry, and selection circuitry. The inversion circuitry generates a first transformed data word by inverting one or more of a plurality of bits of a first data word. The first transform circuitry generates a second transformed data word by performing a first invertible operation on the first data word and a second data word. The selection circuitry selects one of the first data word, the first transformed data word, and the second transformed data word based on a first number of bit inversions between the first data word and the second data word, a second number of bit inversions between the first transformed data word and the second data word, and a third number of bit inversions between the second transformed data word and the second data word. The selection circuitry further outputs the selected data word.

Abstract: A memory device includes a data memory array, a reference memory array and a detection circuit. The reference memory array includes (N/2+1) bit lines, (N/2) source lines and reference cells, N being a positive even integer. Each row of reference cells includes a (2n?1)th reference cell and a (2n)th reference cell. The (2n?1)th reference cell includes a first terminal coupled to an nth bit line, and a second terminal coupled to an nth source line, n being a positive integer less than N/2+1. The (2n)th reference cell includes a first terminal coupled to an (n+1)th bit line, and a second terminal coupled to the nth source line. The detection circuit compares a data current outputted from the data memory array and a reference current outputted from the reference memory array to determine a data state of a memory cell.

Abstract: A memory includes read circuitry for reading values stored in memory cells. The read circuitry includes flipped voltage followers for providing bias voltages to nodes of current paths coupled to sense amplifiers during memory read operations.

Abstract: A semiconductor memory device includes first, second, third, and fourth planes, a first address bus connected to the first and third planes, a second address bus connected to the second and fourth planes, and a control circuit configured to execute a synchronous process on at least two planes in response to a first command set including a first address and a second address. The control circuit is configured to transfer the first address to the first and third planes through the first address bus, and the second address to the second and fourth planes through the second address bus, and during the synchronous process, select a first block in one of the first and third planes, based on the transferred first address and select a second block in one of the second and fourth planes, based on the transferred second address.

Abstract: A streaming engine employed in a digital data processor specifies a fixed read only data stream defined by plural nested loops. An address generator produces address of data elements. A steam head register stores data elements next to be supplied to functional units for use as operands. The streaming engine stores an early address of next to be fetched data elements and a late address of a data element in the stream head register for each of the nested loops. The streaming engine stores an early loop counts of next to be fetched data elements and a late loop counts of a data element in the stream head register for each of the nested loops.

Abstract: Described are memory modules that support different error detection and correction (EDC) schemes in both single- and multiple-module memory systems. The memory modules are width configurable and support the different EDC schemes for relatively wide and narrow module data widths. Data buffers on the modules support the half-width and full-width modes, and also support time-division-multiplexing to access additional memory components on each module in support of enhanced EDC.

Abstract: A method of operating a memory device includes receiving a duty training request, performing first training for a write path in a first period, storing a result value of the first training, performing second training for a write path in a second period, storing a result value of the second training, transmitting the result value of the first training to an external device, and receiving a duty cycle adjuster (DCA) code value corresponding to the first training result value from the external device.

Abstract: Methods, systems, and devices for a modified write voltage for memory devices are described. In an example, the memory device may determine a first set of memory cells to be switched from a first logic state (e.g., a SET state) to a second logic state (e.g., a RESET state) based on a received write command. The memory device may perform a read operation to determine a subset of the first set of memory cells (e.g., a second set of memory cells) having a conductance threshold satisfying a criteria based on a predicted drift of the memory cells. The memory device may apply a RESET pulse to each of the memory cells within the first set of memory cells, where the RESET pulse applied to the second set of memory cells is modified to decrease voltage threshold drift in the RESET state.

Abstract: Various implementations provide systems and methods for reading data from memory bit cells. An example implementation includes a read circuit that provides a single-ended output from a sensing stage. The single-ended output is received by a reset-set (RS) latch, which also receives a virtual bit line signal. The single-ended output and the virtual bit line signal provide complementary inputs to the RS latch, and the RS latch stores a sensed bit, and the sensed bit may be driven onto a data bus.

Abstract: Information communication circuitry, including a first integrated circuit for coupling to a second integrated circuit in a package on package configuration. The first integrated circuit comprises processing circuitry for communicating information bits, and the information bits comprise data bits and error correction bits, where the error correction bits are for indicating whether data bits are received correctly. The second integrated circuit comprises a memory for receiving and storing at least some of the information bits. The information communication circuitry also includes interfacing circuitry for selectively communicating, along a number of conductors, between the package on package configuration. In a first instance, the interfacing circuitry selectively communicates only data bits along the number of conductors.

Abstract: A method of a flash controller to be coupled between a flash memory device and a host device is provided. The flash memory device has a plurality of blocks each having a plurality of pages, and the method comprises: receiving a trim/erase/unmap command from the host device; obtaining a storage space, which is to be erased, from the trim/erase/unmap command; comparing a space size of the storage space with a threshold to determine whether the space size is larger than the threshold; and resetting valid page counts of the plurality of blocks of the flash memory device when the space size is larger than the threshold.

Abstract: A semiconductor memory device includes a memory region including a plurality of memory blocks, and suitable for outputting first and second read data from first and second memory blocks among the plurality of memory blocks based on first and second read control signals and a read address signal; a scheduler suitable for outputting a read scheduling signal based on the first and second read control signals; and an output driver suitable for outputting the first and second read data by a predetermined burst length alternately twice or more to a data pad based on a mode signal, wherein the first read data are outputted to the data pad according to a first burst sequence, and the second read data are outputted to the data pad according to a second burst sequence, based on the read scheduling signal.

Abstract: An example apparatus comprises a memory resource configured to store data and transmit data. The apparatus may further include a safety controller coupled to the memory resource configured to receive the data from the memory resource, receive latched data from an application controller, and determine whether to allow an output of commands from the application controller in response to a comparison of the data from the memory resource and the latched data from the application controller.

Abstract: Various embodiments provide a memory system architecture for heterogeneous memory technologies, which can be implemented by a memory sub-system. A memory system architecture of some embodiments can support servicing an individual command request using different (heterogeneous) memory technologies, such as different types of memory devices (e.g., heterogeneous memory devices), different types of memory device controllers (e.g., heterogeneous memory device controllers), different types of data paths (e.g., data paths with different protocols or protocol constrains), or some combination thereof. According to various embodiments, the memory system architecture uses tracking and management of multiple command responses to service a single command request from a host system.

Abstract: A method includes: receiving, by a computing device, data for storage in a dispersed storage network; writing, by the computing device, the data to a first location; generating, by the computing device, a first pointer to the first location; receiving, by the computing device, updated data that is an updated version of the data; writing, by the computing device, the updated data to a second location; generating, by the computing device, a second pointer to the second location; and deleting, by the computing device, the first pointer at a time after writing the updated data and generating the second pointer.

Abstract: An output circuit includes a first switch that outputs a positive voltage signal received via a first node when in an ON state, a second switch that outputs a negative voltage signal received via a second node when in an ON state, third and fourth switches that set the first and second nodes to a reference power supply voltage when in an ON state, a first follower circuit that generates, as a gate voltage, a voltage signal following and being in phase with a voltage signal of the first node through source follower operation and supplies the gate voltage to a gate of the first switch, and a second follower circuit that generates, as a gate voltage, a voltage signal following and being in phase with a voltage signal of the second node through source follower operation and supplies the gate voltage to a gate of the second switch.

Abstract: Techniques disclosed herein can be used to improve cross-temperature coverage of memory devices and improve memory device reliability in cross-temperature conditions. More specifically, a memory trim set can be selected from multiple candidate memory trim sets when performing a memory operation (such as a memory write operation), based on a temperature metric and a P/E cycle metric for the memory device. The candidate memory trim sets include multiple respective memory trim values (e.g., memory configuration parameters, such as program voltage step size, program pulse width, program verify level, etc., as discussed above) for performing the memory operation. The temperature metric can be indicative of a temperature of at least a region of the memory device (e.g., the entire device, a memory plane, a memory block, etc.), and the P/E cycle metric can be indicative of a number of P/E cycles performed by the memory device within a selected time interval.

Abstract: Systems, apparatuses, and methods related to dynamic random access memory (DRAM), such as finer grain DRAM, are described. For example, an array of memory cells in a memory device may be partitioned into regions. Each region may include a plurality of banks of memory cells. Each region may be associated with a data channel configured to communicate with a host device. In some examples, each channel of the array may include two or more data pins. The ratio of data pins per channel may be two or four in various examples. Other examples may include eight data pins per channel.

Abstract: A low-power system-on-chip includes an originating controller, a fabric, and a power controller. The originating controller is configured to initiate a memory transaction request including a source address. The fabric includes an arbiter configured to receive the memory transaction request and determine a first memory device associated with the memory transaction request. The power controller is configured to selectively change a first memory bank of the first memory device from a first power mode to a second power mode based at least in part on the source address. The fabric is configured to perform a memory operation by (a) receiving stored data from memory storage locations corresponding to the source address when the memory transaction request includes a read request, and (b) sending data included in the memory transaction request to the memory storage locations when the memory transaction request includes a program or a write request.

Abstract: A data storage device including, in one implementation, a NAND memory and a controller. The NAND memory includes a read/write circuit configured to determine and store initial physical column addresses for each plane included in the NAND memory. The controller is configured to send a read-transfer command and a one-byte address to the NAND memory. The read/write circuit is also configured to retrieve a first initial physical column address from the initial physical column addresses stored in the NAND memory after the NAND memory receives the one-byte address from the controller. The first initial physical column address is associated with a die address and a plane address included in the one-byte address. The read/write circuit is further configured to retrieve a first set of data stored at the first initial physical column address. The read/write circuit is also configured to output the first set of data to the controller.

Abstract: A memory system includes an address mapping circuit. The address mapping circuit receives an input memory address having a first set of address bits. The address mapping circuit applies a logic function to the input memory address to generate a mapped memory address. The logic function uses at least a subset of the first set of address bits in two separate operations that respectively determine two portions of the mapped memory address.

Abstract: A nonvolatile memory device includes a memory cell array and a row decoder. The memory cell array includes a plurality of mats. A first cell string of first mat is connected to a plurality of first word-lines, a first bit-line and a first string selection line. A second cell string of second mat is connected to a plurality of second word-lines, a second bit-line and a second string selection line. Each of the first and second cell strings includes a ground selection transistor, memory cells, and a string selection transistor coupled in series. The row decoder applies a first voltage to a third word-line among the plurality of first and second word-lines for a first period of time in a single mat mode and to apply a second voltage to the third word-line for a second period of time longer than the first period of time in a multi-mat mode.

Abstract: A method for execution by a storage unit of a dispersed storage network (DSN) includes receiving a data slice for storage. A first bin that includes the data slice is generated and stored in a first location of a memory device of the storage unit, and a bin pointer that includes a reference to the first location is generated. A revision of the data slice is later received, and a second bin that includes the revised data slice is generated and stored in a second location of the memory device. A modified bin pointer is generated by editing the bin pointer to include a reference to the second location. A back pointer that references the first location is generated in response to commencing writing of the revised data slice. The back pointer is deleted in response to determining that the revised data slice has reached a finalized write stage.

Abstract: An apparatus that includes a word line with a plurality of memory cells that are able to be programmed to a plurality of data states is provided. The apparatus further includes a programming circuit. The programming circuit is configured to program count the number of verify pulses at a first verify voltage level that are performed during programming of the memory cells to a first programmed data state to determine a verify count. During programming to a second data state, the programming circuit applies a plurality of programming pulses at increasing voltage levels and a plurality of verify pulses at a second verify voltage level to the selected word line. During programming of the memory cells to the second programmed data state, the number of verify pulses is one fewer than the number of programming pulses.

Abstract: A device and method for facilitating orthogonal data transposition during data transfers to/from a processing array and a storage memory since the data words processed by the processing array (using computational memory cells) are stored orthogonally to how the data words are stored in storage memory. Thus, when data words are transferred between storage memory and the processing array, a mechanism orthogonally transposes the data words.

Abstract: A novel storage device and a novel semiconductor device are provided. In the storage device, a cell array including a plurality of memory cells is stacked above a control circuit, and the cell array operates separately in a plurality of blocks. Furthermore, a plurality of electrodes are included between the control circuit and the cell array. The electrode is provided for a corresponding block to overlap with the block, and a potential of the electrode can be changed for each block. The electrode has a function of aback gate of a transistor included in the memory cell, and a potential of the electrode is changed for each block, whereby the electrical characteristics of the transistor included in the memory cell can be changed. Moreover, the electrode can reduce noise caused in the control circuit.

Abstract: Embodiments of the disclosure are drawn to apparatuses and methods for analog row access tracking. A plurality of unit cells are provided, each of which contains one or more analog circuits used to track accesses to a portion of the wordlines of a memory device. When a wordline in the portion is accessed, the unit cell may update an accumulator voltage, for example by adding charge to a capacitor. A comparator circuit may determine when one or more accumulator voltages cross a threshold (e.g., a reference voltage). Responsive to the accumulator voltage crossing the threshold, an aggressor address may be loaded in a targeted refresh queue, or if the aggressor address is already in the queue, a priority flag associated with that address may be set. Aggressor addresses may be provided to have their victims refreshed in an order based on the number of set priority flags.

Abstract: Systems and methods are disclosed for secure control flow prediction. Some implementations may be used to eliminate or mitigate the Spectre-class of attacks in a processor. For example, an integrated circuit (e.g., a processor) for executing instructions includes a control flow predictor with entries that include respective indications of whether the entry has been activated for use in a current process, wherein the integrated circuit is configured to access the indication in one of the entries that is associated with a control flow instruction that is scheduled for execution; determine, based on the indication, whether the entry of the control flow predictor associated with the control flow instruction is activated for use in a current process; and responsive to a determination that the entry is not activated for use in the current process, apply a constraint on speculative execution based on control flow prediction for the control flow instruction.

Abstract: A semiconductor system in accordance with an embodiment includes a module controller and a plurality of semiconductor chips configured to receive logical addresses from the module controller. The semiconductor system also includes a plurality of scramble circuits, with a scramble circuit provided for each of the plurality of semiconductor chips, configured to receive the logical addresses and to output corresponding physical addresses for the plurality of semiconductor chips. Each scramble circuit of the plurality of scramble circuits is configured to receive the same logical address and to output a corresponding physical address different from the physical addresses output by the other scramble circuits of the plurality of scramble circuits.

Abstract: A volatile memories includes an address scrambler configured to scramble at least a portion of a received addresses to obscure address topography of a memory array using at least one scramble key. The at least one scramble key is generated by a random number generator. The address scrambler is configured to perform logical bitwise operations using between a received address and the at least one scramble key to generate the scrambled row address.

Abstract: Various embodiments described herein provide for selectively sending a read command, such as a speculative read (SREAD) command in accordance with a Non-Volatile Dual In-Line Memory Module-P (NVDIMM-P) memory protocol, to a memory sub-system based on a predicted row status of a given memory device (e.g., random access memory (RAM)-based cache) of the memory sub-system.

Abstract: Systems and methods are disclosed, including, in a storage system comprising control circuitry and a memory array having multiple groups of memory cells, storing a first physical-to-logical (P2L) data structure for a first physical area of a first group of memory cells in a second physical area of the first group of memory cells, such as when resuming operation from a low-power state, including an asynchronous power loss (APL). The first group of memory cells can include a super block of memory cells. A second P2L data structure for the second physical area of the first group of memory cells can be stored, such as in a metadata area of the second physical area, and an address of the first P2L data structure can be stored in the second P2L data structure.

Abstract: A memory management unit comprises an interface for receiving an address translation request from a device, the address translation request specifying a virtual request to be translated. Translation circuitry translates the virtual address into an intermediate address different from a physical address directly specifying a memory location. The interface provides an address translation response specifying the intermediate address to the device in response to the address translation request. This improves security by avoiding exposure of physical addresses to the device.

Abstract: A memory access system includes a memory that is abstracted into data structures. The memory access system further includes a processor that generates an access request for accessing the abstracted memory by way of a structure access circuit of the memory access system. As the memory is abstracted into the data structures and the processor accesses the abstracted memory using the data structures, an addressing capability of the processor is extended. Further, the computing overhead of the processor is reduced, as the processor performs various memory operations by accessing the memory by way of the structure access circuit.

Abstract: A memory device and an access method applied to the memory device are provided. The memory device is electrically connected to a host, and the memory device includes a memory circuit and a memory controller. The memory circuit includes a first memory array and a second memory array. The first memory array and the second memory array respectively provide a first physical space and a second physical space. The memory controller receives an access command from the host. The memory controller performs the access command to the first physical space when the access command is a first type of command, and the memory controller performs the access command to the second physical space when the access command is a second type of command.