Abstract: Systems, apparatuses, and methods related to organizing data to correspond to a matrix at a memory device are described. Data can be organized by circuitry coupled to an array of memory cells prior to the processing resources executing instructions on the data. The organization of data may thus occur on a memory device, rather than at an external processor. A controller coupled to the array of memory cells may direct the circuitry to organize the data in a matrix configuration to prepare the data for processing by the processing resources. The circuitry may be or include a column decode circuitry that organizes the data based on a command from the host associated with the processing resource. For example, data read in a prefetch operation may be selected to correspond to rows or columns of a matrix configuration.

Abstract: An octo mode program and erase operation method to reduce test time in a non-volatile memory device. M/8 word lines corresponding to an octo row, among M word lines, are simultaneously selected, and a write voltage is applied to memory cells connected to M/8 word lines corresponding to the octo row. A voltage that is different from the write voltage is applied to memory cells connected to the rest of word lines, except for M/8 word lines corresponding to the octo row, when the octo signal is applied to an address decoder.

Abstract: Described apparatuses and methods relate to erroneous select die access (SDA) detection for a memory system. A memory system may include a memory controller and a memory device that are capable of implementing an SDA protocol that enables selective memory die access to multiple memory devices that couple to a command bus. A memory device can include logic that determines if signaling that conflicts with the SDA protocol is detected. If it is determined that conflicting signaling is detected, the logic may provide an indication of the conflicted signaling. In doing so, the erroneous SDA detection described herein may reduce the likelihood of a memory device erroneously masking memory dice, thereby limiting the memory device from exhibiting unexpected, and in some cases, dangerous behavior.

Abstract: A data transfer circuit in a nonvolatile memory device includes first repeaters, second repeaters and signal lines. The signal lines connect the first repeaters and the second repeaters, and include a first group of signal lines and a second group of signal lines alternatingly arranged. The first repeaters include a first group of repeaters activated in a first operation mode and a second group of repeaters activated in a second operation mode. The second repeaters include a third group of repeaters activated in the first operation mode and are connected to the first group of repeaters through the first group of signal lines floated in the second operation mode, and a fourth group of repeaters activated in the second operation mode and are connected to the second group of repeaters through the second group of signal lines floated in the first operation mode.

Abstract: A memory stick configured for use with a processor in a computer is provided. The memory stick includes a printed circuit board with first and second sides, each of the first and second sides including eighteen memory chips, each of the memory chips being an ×8 DRAM chip; the eighteen memory chips being distributed into first, second, third and fourth rows, the first row and the second row being on a left half of the printed circuit board and the third and fourth row being on a right half of the printed circuit board; and the printed circuit board including at least 400 pins including at least 16 pins for ECC bits and at least 128 pins for data bits; wherein at least the memory chips and the 128 pins for data bits establish a 128-bit data width to communicate.

Abstract: Operations include monitoring a logical level of a first pin of the plurality of pins while a data burst is active, wherein the first pin is associated with at least one of a read enable signal or a data strobe signal, determining whether a period of time during which the logical level of the first pin is held at a first logical level satisfies a threshold condition, in response to determining that the period of time satisfies the threshold condition, continuing to monitor the logical level of the first pin, determining whether the logical level of the first pin changed from the first logical level to a second logical level, and in response to determining that the logical level of the first pin changed from the first logical to the second logical level, causing warmup cycles to be performed.

Abstract: A circuit includes a series of a first latch circuit, selection circuit, second latch circuit, and pre-decoder. A control circuit, based on a clock signal, outputs control signals to the selection circuit and first and second latch circuits, and, to the pre-decoder, a pulse signal including a first pulse during a first portion of a clock period in response to a read enable signal having a first logical state, and a second pulse during a second portion of the clock period in response to a write enable signal having the first logical state. Based on the control signals, the selection circuit and first and second latch circuits output read and write addresses to the pre-decoder during the respective first and second clock period portions, and the pre-decoder outputs a partially decoded address in response to each of the read address and first pulse, and the write address and second pulse.

Abstract: A method for backing up data includes: receiving, by a driver in a host controller of a data storage device, an indication of a threatening event identifying one or more data files in the data storage device; delaying, by the driver, the threatening event; and backing up, by the driver, the one or more data files in the data storage device, prior to allowing the threatening event.

Abstract: A memory system includes a semiconductor memory device having memory cells arranged in rows and columns, and a controller configured to issue a write command with or without a partial page program command to the semiconductor memory device. The semiconductor memory device, in response to the write command issued without the partial page command, executes a first program operation on a page of memory cells and then a first verify operation on the memory cells of the page using a first verify voltage for all of the memory cells of the page, and in response to the write command issued with the partial page command, executes a second program operation on a subset of the memory cells of the page and then a second verify operation on the memory cells of the subset using one of several different second verify voltages corresponding to the subset.

Abstract: Methods, systems, and devices for modification of a command timing pattern are described. A host device may transmit (e.g., issue), to a memory device, a quantity of deselect commands between activation or data access commands to satisfy configured timing constraints. Each deselect command may indicate a polarity (e.g., a high voltage or a low voltage) for a command and address (CA) pin at the memory device. In some examples, the quantity of deselect commands may include one or more sequences of deselect commands (e.g., low-high-high-high). The host device may truncate a sequence of deselect commands, for example to satisfy timing constraints without transmitting additional unnecessary commands. By dynamically configuring the quantity of deselect commands, the host device may improve latency and overall efficiency of system operations without violating the configured timing constraints.

Abstract: A storage array controller may receive a write request comprising data to be stored at one or more solid-state storage devices. A write granularity associated with the write request may be generated that is less than a logical block size associated with the storage array controller. The data associated with the write request may be segmented based on the generated write granularity. The write request may be executed to store the segmented data at the one or more solid-state storage devices.

Abstract: A method for obtaining circuit noise parameters and an electronic device are provided. The method includes: determining a plurality of circuits to be tested, where each circuit includes one or more signal lines, and each circuit has at least one operating state; obtaining a parasitic capacitance between each signal line and all others signal lines, and determining a logic state of each signal line under each of the operating states; determining a plurality of operating state combinations for the plurality of circuits to be tested, and determining one target operating state combination from the plurality of operating state combinations; and under the target operating state combination, determining noise parameters of each one of the signal lines to be tested according to the logic state of each one of the signal lines to be tested and the parasitic capacitance.

Abstract: A memory device is provided. The memory device comprises a memory cell array, a first control circuit, and a second control circuit. The memory cell array has a plurality of memory cells, wherein each of the plurality of memory cells comprises a first port and a second port. The first control circuit is disposed on a first side of the memory cell array and is arranged to electrically connect to the plurality of first ports. The second control circuit is disposed on the first side of the memory cell array and is arranged to electrically connect to the plurality of second ports. The plurality of first ports are different from the plurality of second ports.

Abstract: A nonvolatile semiconductor memory device includes a memory cell array having multiple blocks each with a plurality of memory strings. Each memory string has multiple memory cells connected in series between first and second selection transistors. The device further includes a row decoder, a block decoder, first and second signal line groups, and a switch circuit. The row decoder has transfer transistors through which voltages are supplied to the selection transistors. The block decoder supplies a selection signal that indicates whether the first group or the second group has been selected. The first and second signal line groups are connected to the selection transistors of the memory strings that are in the respective first and second memory blocks of the first and second groups. The switch circuit connects the first and second signal line groups to the respective first and second memory blocks of the selected group.

Abstract: A memory system employs an addressing scheme to logically divide rows of memory cells into separate contiguous regions, one for data storage and another for error detection and correction (EDC) codes corresponding to that data. Data and corresponding EDC codes are stored in the same row of the same bank. Accessing data and corresponding EDC code in the same row of the same bank advantageously saves power and avoids bank conflicts. The addressing scheme partitions the memory without requiring the requesting processor to have an understanding of the memory partition.

Abstract: A compilation method includes: receiving a signal to be compiled and a working frequency signal; performing compilation processing on the signal to be compiled to obtain a compilation result signal; and if the signal to be compiled is a reserved code, performing compatibility selection processing on the compilation result signal based on the working frequency signal to determine a first compilation value.

Abstract: A variety of applications can include systems and methods that control a memory size of a changelog in a storage device, where the changelog is implemented to correlate virtual page addresses to physical addresses in one or more memory devices. The memory size can be controlled by an allocation schema for a scalable memory area for the changelog in the storage device. The allocation schema can include using bitmaps, lists linked to the bitmaps, and a counter to count bits asserted in the bitmaps such that the allocation of memory space in the storage device can depend on usage rather than allocating a large memory space for all possible correlations of virtual page addresses to physical addresses.

Abstract: Techniques for scheduling memory operations are disclosed in which alternate read/write commands within a multi-bank memory operation are delayed beyond a minimum timing parameter in order to increase memory data bus utilization. The remaining read/write commands are not delayed beyond the minimum timing parameter. Every other clock cycle (e.g., even clock cycles) within the memory operation is reserved for activate commands, while other commands such as sync and read/write are scheduled on the intervening clock cycles (e.g., odd clock cycles). For memory devices for which a sync command (which causes a clock of the memory data bus to start) is to precede a corresponding read/write command by a number of clock cycles that would place it in a cycle reserved for activate commands, a particular operation mode is disclosed in which the memory device internally delays a received sync command.

Abstract: Embodiments of a physical unclonable function (PUF) device and a method for generating helper data for a PUF device with an array of cells are disclosed. In an embodiment, the PUF device comprises an array of cells, wherein each cell of the array generates an output signal, a reliable cell group detector coupled to the array of cells to find reliable groups of cells in the array of cells having sufficient reliable cells and output addresses of the reliable groups of cells, and a storage device coupled to the reliable cell group detector to store the addresses of the reliable groups of cells to be used as helper data for PUF response operations.

Abstract: A method is disclosed for accessing a primary account maintained in a cloud environment, receiving information defining a structure of the primary account, the structure including a plurality of assets, and deploying, inside the primary account or a secondary account for which trust is established with the primary account, at least one ephemeral scanner configured to scan at least one block storage volume and output metadata defining the at least one block storage volume, the output excluding raw data of the primary account. The method further comprises receiving a transmission of the metadata from the at least one ephemeral scanner, excluding raw data of the primary account, analyzing the metadata to identify cybersecurity vulnerabilities, correlating each of the cybersecurity vulnerabilities with one of the assets, and generating a report correlating the cybersecurity vulnerabilities with the assets. Systems and computer-readable media implementing the method are also disclosed.

Abstract: A semiconductor memory device includes data pads, wordlines, memory cells, global input-output lines, and intra-bank switches. The wordlines extend in a row direction and are arranged in a column direction. The wordlines are grouped into wordline groups such that each wordline group includes wordlines adjacent in the column direction. A selection wordline is selected based on a row address. The global input-output lines extend in the column direction and are arranged in the row direction to transfer data between the data pads and the memory cells. The global input-output lines are cut into line segment groups respectively corresponding to the wordline groups. The intra-bank switches control, based on the row address, electrical connections between two line segment groups among the line segment groups, where the two line segment groups are adjacent in the column direction and included in one memory bank.

Abstract: An electronic device includes a target address generation circuit configured to generate a counting signal by counting the number of times each logic level combination of an address is input by performing an internal read operation and an internal write operation during an active operation, configured to store the counting signal as the storage counting signal when the counting signal is counted more than a storage counting signal that is stored therein, and configured to store the address, corresponding to the counting signal, as a target address; and a refresh control circuit configured to control a smart refresh operation on the target address.

Abstract: Memory devices and systems with post-packaging master die selection, and associated methods, are disclosed herein. In one embodiment, a memory device includes a plurality of memory dies. Each memory die of the plurality includes a command/address decoder. The command/address decoders are configured to receive command and address signals from external contacts of the memory device. The command/address decoders are also configured, when enabled, to decode the command and address signals and transmit the decoded command and address signals to every other memory die of the plurality. Each memory die further includes circuitry configured to enable, or disable, or both individual command/address decoders of the plurality of memory dies. In some embodiments, the circuitry can enable a command/address decoder of a memory die of the plurality after the plurality of memory dies are packaged into a memory device.

Abstract: The method processes a series of events received asynchronously from an array of pixels of an event-based light sensor. Each event of the series comprises an address of a pixel of the array from which the event is received, and an attribute value depending on incident light sensed by that pixel. The method comprises: storing a data structure in a first memory, the data structure including event data for at least some of the pixels of the array, the event data for a pixel being related to at least one event most recently received from said pixel; during a timeslot, building, in a second memory having a faster access than the first memory, a map for the pixels of the array as the events of the series are received, the map including an information element for each pixel of the array, the information element having one of a plurality of values including a nil value indicating an absence of event during the timeslot; and updating the data structure after the timeslot using the map.

Abstract: A static random access memory (SRAM) cell includes substrate, a first semiconductor fin, a first gate structure, a second semiconductor fin, and a second gate structure. The substrate has a first p-well and an n-well bordering the first p-well. The first semiconductor fin extends within the first p-well. The first gate structure extends across the first semiconductor fin and forms a first write-port pull-down transistor with the first semiconductor fin. The second semiconductor fin extends within the n-well. The second gate structure extends across the second semiconductor fin and forms a first write-port pull-up transistor with the second semiconductor fin. A channel region of the first write-port pull-down transistor has a higher doping concentration than a channel region of the first write-port pull-up transistor.

Abstract: A level shifter receives an input signal in a first power domain and generates a corresponding output signal in a second power domain. The transition time of the output signal may be longer during a low-to-high transition than during a high-to-low transition or vice versa. The level shifter may provide two outputs, wherein one of the two outputs has a shorter transition time during a high-to-low transition and the other output has a shorter transition time during a low-to-high transition. By using an inverter on the second output, two non-inverted outputs are generated with different transition times. A ramp selection circuit is used to select between the first output and the inverted second output. The ramp selection circuit selects the output with the shortest transition time.

Abstract: A memory device and an operation method for the memory device are provided. The memory device includes a memory block, a row decoder and a control circuit. The memory block includes a plurality of memory cells, wherein a row of memory cells in the memory block are coupled to at least one word line, and a column of memory cells in the memory block are coupled to a bit line and a multiplexer. The row decoder is coupled to the memory block and configured for the row of memory cells. The control circuit is coupled to the row decoder and indicates which word line, bit line and multiplexer is enabled.

Abstract: A dynamic random access memory (DRAM) component (e.g., module or integrated circuit) can be configured to have multiple rows in the same bank open concurrently. The controller of the component divides the address space of the banks into segments based on row address ranges. These row address ranges do not necessarily correspond to row address ranges of the bank's subarrays (a.k.a. memory array tiles—MATs). When a command is sent to open a row, the controller marks a plurality of the segments as blocked. The controller thereby tracks address ranges in a bank where it will not open a second row unless and until the first row is closed. The memory component may store information about which, and how many, segments should be blocked in response to opening a row. This information may be read by the controller during initialization.

Abstract: A storage device is provided including an interface circuit configured to receive application information from a host; a field programmable gate array (FPGA); a neural processing unit (NPU); and a central processing unit (CPU) configured to select a hardware image from among a plurality of hardware images stored in a memory using the application information, and reconfigure the FPGA using the selected hardware image. The NPU is configured to perform an operation using the reconfigured FPGA.

Abstract: Systems, apparatuses, and methods related to dynamic random access memory (DRAM), such as finer grain DRAM, are described. For example, an array of memory cells in a memory device may be partitioned into regions. Each region may include a plurality of banks of memory cells. Each region may be associated with a data channel configured to communicate with a host device. In some examples, each channel of the array may include two or more data pins. The ratio of data pins per channel may be two or four in various examples. Other examples may include eight data pins per channel.

Abstract: Systems, apparatuses, and methods related to a memory device, such as a low-power dynamic random-access memory (DRAM) and an associated host device are described. The memory device and the host device can include control logic that enables the host device to transmit a burst value to the memory device, which may enable the memory device, the host, or both, to manage refresh operations during a normal operation mode or a self-refresh mode. The burst value can be transmitted to the memory device in association with a command (e.g., a command directing the memory device to enter the self-refresh mode). The burst value can specify a number of self-refresh operations to be initiated at the memory device in response to receiving the command. When the specified number of self-refresh operations are completed, regular self-refresh operations may begin, with an internal self-refresh timer counting an interval to the next self-refresh operation.

Abstract: Transmitter circuitry includes inversion circuitry, first transform circuitry, and selection circuitry. The inversion circuitry generates a first transformed data word by inverting one or more of a plurality of bits of a first data word. The first transform circuitry generates a second transformed data word by performing a first invertible operation on the first data word and a second data word. The selection circuitry selects one of the first data word, the first transformed data word, and the second transformed data word based on a first number of bit inversions between the first data word and the second data word, a second number of bit inversions between the first transformed data word and the second data word, and a third number of bit inversions between the second transformed data word and the second data word. The selection circuitry further outputs the selected data word.

Abstract: A memory device includes a data memory array, a reference memory array and a detection circuit. The reference memory array includes (N/2+1) bit lines, (N/2) source lines and reference cells, N being a positive even integer. Each row of reference cells includes a (2n?1)th reference cell and a (2n)th reference cell. The (2n?1)th reference cell includes a first terminal coupled to an nth bit line, and a second terminal coupled to an nth source line, n being a positive integer less than N/2+1. The (2n)th reference cell includes a first terminal coupled to an (n+1)th bit line, and a second terminal coupled to the nth source line. The detection circuit compares a data current outputted from the data memory array and a reference current outputted from the reference memory array to determine a data state of a memory cell.

Abstract: A memory includes read circuitry for reading values stored in memory cells. The read circuitry includes flipped voltage followers for providing bias voltages to nodes of current paths coupled to sense amplifiers during memory read operations.

Abstract: A semiconductor memory device includes first, second, third, and fourth planes, a first address bus connected to the first and third planes, a second address bus connected to the second and fourth planes, and a control circuit configured to execute a synchronous process on at least two planes in response to a first command set including a first address and a second address. The control circuit is configured to transfer the first address to the first and third planes through the first address bus, and the second address to the second and fourth planes through the second address bus, and during the synchronous process, select a first block in one of the first and third planes, based on the transferred first address and select a second block in one of the second and fourth planes, based on the transferred second address.

Abstract: A streaming engine employed in a digital data processor specifies a fixed read only data stream defined by plural nested loops. An address generator produces address of data elements. A steam head register stores data elements next to be supplied to functional units for use as operands. The streaming engine stores an early address of next to be fetched data elements and a late address of a data element in the stream head register for each of the nested loops. The streaming engine stores an early loop counts of next to be fetched data elements and a late loop counts of a data element in the stream head register for each of the nested loops.

Abstract: A method of operating a memory device includes receiving a duty training request, performing first training for a write path in a first period, storing a result value of the first training, performing second training for a write path in a second period, storing a result value of the second training, transmitting the result value of the first training to an external device, and receiving a duty cycle adjuster (DCA) code value corresponding to the first training result value from the external device.

Abstract: Described are memory modules that support different error detection and correction (EDC) schemes in both single- and multiple-module memory systems. The memory modules are width configurable and support the different EDC schemes for relatively wide and narrow module data widths. Data buffers on the modules support the half-width and full-width modes, and also support time-division-multiplexing to access additional memory components on each module in support of enhanced EDC.

Abstract: Methods, systems, and devices for a modified write voltage for memory devices are described. In an example, the memory device may determine a first set of memory cells to be switched from a first logic state (e.g., a SET state) to a second logic state (e.g., a RESET state) based on a received write command. The memory device may perform a read operation to determine a subset of the first set of memory cells (e.g., a second set of memory cells) having a conductance threshold satisfying a criteria based on a predicted drift of the memory cells. The memory device may apply a RESET pulse to each of the memory cells within the first set of memory cells, where the RESET pulse applied to the second set of memory cells is modified to decrease voltage threshold drift in the RESET state.

Abstract: Various implementations provide systems and methods for reading data from memory bit cells. An example implementation includes a read circuit that provides a single-ended output from a sensing stage. The single-ended output is received by a reset-set (RS) latch, which also receives a virtual bit line signal. The single-ended output and the virtual bit line signal provide complementary inputs to the RS latch, and the RS latch stores a sensed bit, and the sensed bit may be driven onto a data bus.

Abstract: Information communication circuitry, including a first integrated circuit for coupling to a second integrated circuit in a package on package configuration. The first integrated circuit comprises processing circuitry for communicating information bits, and the information bits comprise data bits and error correction bits, where the error correction bits are for indicating whether data bits are received correctly. The second integrated circuit comprises a memory for receiving and storing at least some of the information bits. The information communication circuitry also includes interfacing circuitry for selectively communicating, along a number of conductors, between the package on package configuration. In a first instance, the interfacing circuitry selectively communicates only data bits along the number of conductors.

Abstract: A method of a flash controller to be coupled between a flash memory device and a host device is provided. The flash memory device has a plurality of blocks each having a plurality of pages, and the method comprises: receiving a trim/erase/unmap command from the host device; obtaining a storage space, which is to be erased, from the trim/erase/unmap command; comparing a space size of the storage space with a threshold to determine whether the space size is larger than the threshold; and resetting valid page counts of the plurality of blocks of the flash memory device when the space size is larger than the threshold.

Abstract: A semiconductor memory device includes a memory region including a plurality of memory blocks, and suitable for outputting first and second read data from first and second memory blocks among the plurality of memory blocks based on first and second read control signals and a read address signal; a scheduler suitable for outputting a read scheduling signal based on the first and second read control signals; and an output driver suitable for outputting the first and second read data by a predetermined burst length alternately twice or more to a data pad based on a mode signal, wherein the first read data are outputted to the data pad according to a first burst sequence, and the second read data are outputted to the data pad according to a second burst sequence, based on the read scheduling signal.

Abstract: An example apparatus comprises a memory resource configured to store data and transmit data. The apparatus may further include a safety controller coupled to the memory resource configured to receive the data from the memory resource, receive latched data from an application controller, and determine whether to allow an output of commands from the application controller in response to a comparison of the data from the memory resource and the latched data from the application controller.

Abstract: Various embodiments provide a memory system architecture for heterogeneous memory technologies, which can be implemented by a memory sub-system. A memory system architecture of some embodiments can support servicing an individual command request using different (heterogeneous) memory technologies, such as different types of memory devices (e.g., heterogeneous memory devices), different types of memory device controllers (e.g., heterogeneous memory device controllers), different types of data paths (e.g., data paths with different protocols or protocol constrains), or some combination thereof. According to various embodiments, the memory system architecture uses tracking and management of multiple command responses to service a single command request from a host system.

Abstract: A method includes: receiving, by a computing device, data for storage in a dispersed storage network; writing, by the computing device, the data to a first location; generating, by the computing device, a first pointer to the first location; receiving, by the computing device, updated data that is an updated version of the data; writing, by the computing device, the updated data to a second location; generating, by the computing device, a second pointer to the second location; and deleting, by the computing device, the first pointer at a time after writing the updated data and generating the second pointer.

Abstract: Techniques disclosed herein can be used to improve cross-temperature coverage of memory devices and improve memory device reliability in cross-temperature conditions. More specifically, a memory trim set can be selected from multiple candidate memory trim sets when performing a memory operation (such as a memory write operation), based on a temperature metric and a P/E cycle metric for the memory device. The candidate memory trim sets include multiple respective memory trim values (e.g., memory configuration parameters, such as program voltage step size, program pulse width, program verify level, etc., as discussed above) for performing the memory operation. The temperature metric can be indicative of a temperature of at least a region of the memory device (e.g., the entire device, a memory plane, a memory block, etc.), and the P/E cycle metric can be indicative of a number of P/E cycles performed by the memory device within a selected time interval.

Abstract: An output circuit includes a first switch that outputs a positive voltage signal received via a first node when in an ON state, a second switch that outputs a negative voltage signal received via a second node when in an ON state, third and fourth switches that set the first and second nodes to a reference power supply voltage when in an ON state, a first follower circuit that generates, as a gate voltage, a voltage signal following and being in phase with a voltage signal of the first node through source follower operation and supplies the gate voltage to a gate of the first switch, and a second follower circuit that generates, as a gate voltage, a voltage signal following and being in phase with a voltage signal of the second node through source follower operation and supplies the gate voltage to a gate of the second switch.

Abstract: Systems, apparatuses, and methods related to dynamic random access memory (DRAM), such as finer grain DRAM, are described. For example, an array of memory cells in a memory device may be partitioned into regions. Each region may include a plurality of banks of memory cells. Each region may be associated with a data channel configured to communicate with a host device. In some examples, each channel of the array may include two or more data pins. The ratio of data pins per channel may be two or four in various examples. Other examples may include eight data pins per channel.

Abstract: A low-power system-on-chip includes an originating controller, a fabric, and a power controller. The originating controller is configured to initiate a memory transaction request including a source address. The fabric includes an arbiter configured to receive the memory transaction request and determine a first memory device associated with the memory transaction request. The power controller is configured to selectively change a first memory bank of the first memory device from a first power mode to a second power mode based at least in part on the source address. The fabric is configured to perform a memory operation by (a) receiving stored data from memory storage locations corresponding to the source address when the memory transaction request includes a read request, and (b) sending data included in the memory transaction request to the memory storage locations when the memory transaction request includes a program or a write request.