Abstract: Semiconductor structures are provided. A semiconductor structure includes a memory cell and a logic cell. The memory cell includes a latch circuit formed by two cross-coupled inverters, and a pass-gate transistor coupling an output of the latch circuit to a bit line. A first source/drain region of the pass-gate transistor is electrically connected to the bit line through a first contact over the first source/drain region and a first via over the first contact. The logic cell includes a transistor. A second source/drain region of the transistor is electrically connected to a local interconnect line through a second contact over the second source/drain region and a second via over the second contact. The first and second vias are the same height. The interconnect line and the bit line are formed in the same metal layer, and the bit line is thicker than the interconnect line.

Abstract: A cell structure is disclosed. The cell structure includes a first unit comprising a first group of transistors and a first data latch, a second unit comprising a second group of transistors and a second data latch a read port unit comprising a plurality of p-type transistors, a search line and a complementary search line, the search line and the complementary search line function as input of the cell structure, and a master line, the master line functions as an output of the cell structure, the first unit is coupled to the second unit, both the first and the second units are coupled to the read port unit. According to some embodiments, the first data latch comprises a first and a second p-type transistors, a first and a second n-type transistors.

Abstract: A 3D semiconductor device including: a first level including a single crystal layer, a plurality of first transistors and at least one metal layer, where the at least one metal layer overlays the single crystal layer and includes interconnects between the first transistors forming control circuits; a second level overlaying the at least one metal layer, the second level including a plurality of second transistors; a third level overlaying the second level, the third level including a plurality of third transistors; and polysilicon pillars, where the second level includes a plurality of first memory cells, the first memory cells each including at least one of the second transistors, where the third level includes a plurality of second memory cells, the second memory cells each including at least one of the third transistors, where at least one of the second memory cells is at least partially atop of the control circuits.

Abstract: An integrated circuit including a signal line layout is disclosed. A signal line layout may include a number of signal lines configured for conveying a number of signals. The signal line layout may further include a number of shield lines. Each signal line of the number of signal lines may be positioned adjacent a first shield line and a second shield line of the number of the shield lines. Further, first shield line may extend a length of an adjacent signal line and the second shield line may extend less than a length of the adjacent signal line. An electronic system including circuitry having one or more signal line layouts, and methods of forming signal line layout are also described.

Abstract: An example apparatus includes: a control chip; a plurality of memory chips stacked on the control chip, the plurality of memory chips including first and second memory chips; and a plurality of via conductors connected between the plurality of memory chips and the control chip. Each of the first and second memory chips is divided into a plurality of channels including a first channel. The plurality of via conductors include a first via conductor electrically connected between the first channel in the first memory chip and the control chip, and a second via conductor electrically connected between the first channel in the second memory chip and the control chip. The first and second memory chips substantially simultaneously output read data read from the first channel to the first and second via conductors, respectively.

Abstract: A 3D microelectronic device is provided with several superimposed layers of components, with an upper layer including one or several memory cells having a SRAM structure and provided with a rear biasing electrode. The biasing of the rear biasing electrode is modified to switch the memory cells from a ROM operating mode to a SRAM operating mode.

Abstract: The present disclosure provides a semiconductor structure and a method of fabricating the same, the semiconductor structure being a dual port static random access memory cell, the memory cell comprising a plurality of transistors, the plurality of transistors including a first pull-down transistor and a second pull-down transistor, the first pull-down transistor includes a plurality of first pull-down sub-transistors connected in parallel, the second pull-down transistor includes a plurality of second pull-down sub-transistors connected in parallel, plurality of gates of the plurality of first pull-down sub-transistors are parallel to each other, plurality of gates of the plurality of second pull-down sub-transistors are parallel to each other.

Abstract: A power management integrated circuit includes first pads, second pads, a third pad, and a fourth pad that are configured to be connected with an external device, a regulation block that receives first voltages from the first pads, converts the first voltages to second voltages, and outputs the second voltages to the second pads, a communication block that receives a command through the third pad and outputs an internal information request received together with the command responsive to the command, and a logic block that controls an operation of the regulation block, receives the internal information request from the communication block, and outputs internal state information to the fourth pad based on the internal information request.

Abstract: Some embodiments include a memory array having a first set of lines extending along a first direction, and a second set of lines over the first set of lines and extending along a second direction. Lines of the second set cross lines of the first set at cross-point locations. Memory structures are within the cross-point locations. Each memory structure includes a top electrode material, a bottom electrode material and a programmable material. Rails of insulative material extend parallel to the lines of the second set and alternate with the lines of the second set along the first direction. The programmable material has first regions within the memory structures and second regions over the rails of insulative material. A planarized surface extends across the lines of the second set and across the second regions of the programmable material. Some embodiments include methods of forming memory arrays.

Abstract: Method, base station and user equipment for transceiving system information (SI). A minimum SI message is transmitted, in which the minimum SI message comprises information regarding transmission of at least one additional SI message. The at least one additional SI message is transmitted according to the information in the minimum SI message. The minimum SI message comprises an indicator for indicating the transmission of the at least one additional SI message. The indicator further indicates that the at least one additional SI message are periodically broadcasted.

Abstract: The semiconductor device of the present disclosure includes a plurality of first selection lines provided in a first region, extending in a first direction, and aligned in a second direction; a plurality of second selection lines provided in a second region having a portion that overlaps a portion of the first region, extending in the second direction, and aligned in the first direction; a plurality of third selection lines provided in a third region having a portion that overlaps a portion of the second region, extending in the first direction, and aligned in the second direction; a plurality of fourth selection lines provided in a fourth region having one portion that overlaps a portion of the first region and having another portion that overlaps a portion of the third region, extending in the second direction, and aligned in the first direction; a first coupling part, a first coupling part, a first coupling part, and a first coupling part coupled, respectively, to the plurality of first selection lines, th

Abstract: Use of gallium nitride (GaN) semiconductor material for power devices is challenging due to low yield caused by high defect density on the wafer. Device layout on the wafer, chip probing, and device packaging increase the yield of large area power devices. Device dies containing a plurality of lower-power sub-devices are used to achieve high power ratings, by connecting only functional sub-devices together in the package, while being tolerant of defective sub-devices by selectively excluding the defective sub-devices. The packages and methods are particularly relevant to GaN power switching devices such as high electron mobility transistors (GaN HEMT).

Abstract: A data buffer comprises data storage circuitry; input circuitry to input data to be stored by the data storage circuitry at a first operating voltage; output circuitry to output stored data from the data storage circuitry at a second operating voltage different to the first operating voltage; and control circuitry to control an operating voltage of the data storage circuitry to be substantially the first operating voltage during a data input operation by the input circuitry and to be substantially the second operating voltage during a data output operation by the output circuitry.

Abstract: A technique to provide power management for multiple dice. The technique provides for determining for each respective die of the multiple dice, power consumption for operating each respective die; and generating a respective analog current from each respective die that corresponds to the power consumption of each respective die. The technique further provides for driving each respective analog current onto a common node that results in a cumulative analog current; and utilizing the cumulative analog current at the common node to indicate total power consumption of the dice.

Abstract: An intelligent journal-aware caching manager for journaled data is provided. The caching manager ensures that data is not duplicated in a write-ahead-log (“journal”) and volatile cache memory (“cache”). The caching manager maintains first-in-first-out (“FIFO”) policy for the journal as needed and includes an alternate caching policy for non-journaled data.

Abstract: Embodiments of the present disclosure are directed towards techniques to provide a memory device with reduced capacitance. In one embodiment, a memory array is formed in a die, and includes one or more pillars and a plurality of wordlines coupled with the one or more pillars. Adjacent wordlines of the plurality of wordlines are separated by respective dielectric layers, which may include components, to reduce capacitance of the plurality of wordlines. The components comprise air gaps or low-k dielectric material. Other embodiments may be described and/or claimed.

Abstract: A resistive random access memory including a stacked structure, at least one vertical electrode, a selector element, and a plurality of resistance changeable structures is provided. The stacked structure is formed by a plurality of horizontal electrodes and a plurality of first dielectric layers stacked alternately, wherein the stacked structure has at least one channel hole extending through the horizontal electrodes and the first dielectric layers. The vertical electrode is formed in the at least one channel hole. The selector element is formed in the channel hole between the vertical electrode and the stacked structure. The resistance changeable structures are disposed on the surface of each of the horizontal electrodes and are in contact with the selector element in the channel hole.

Abstract: A technique to provide power management for multiple dice. The technique provides for determining for each respective die of the multiple dice, power consumption for operating each respective die; and generating a respective analog current from each respective die that corresponds to the power consumption of each respective die. The technique further provides for driving each respective analog current onto a common node that results in a cumulative analog current; and utilizing the cumulative analog current at the common node to indicate total power consumption of the dice.

Abstract: Various embodiments, disclosed herein, include apparatus and methods to provide separate regulated voltages to an electronic device. Multiple voltage regulators can be provided with phase alignment circuitry coupled to the multiple voltage regulators. The multiple voltage regulators can be structured with each voltage regulator having an output separate from the output of the other voltage regulators. The phase alignment circuitry can provide for relative phases among voltage regulator ripples at the output pins of the multiple voltage regulators to be maintained at a certain relationship. Additional apparatus, systems, and methods are disclosed.

Abstract: A semiconductor device includes: a semiconductor substrate; a plurality of transistors provided on a surface of the semiconductor substrate; and a first circuit electrically connected to gate electrodes of the plurality of transistors. The plurality of transistors include: a first transistor and a second transistor that are adjacent via an insulating region in a first direction; a third transistor that is adjacent to the first transistor and the second transistor via the insulating region in a second direction intersecting the first direction; and a fourth transistor that is adjacent to the first transistor and the second transistor via the insulating region in the second direction. The first circuit sets the first through fourth transistors to an ON state according to a first signal.

Abstract: Some embodiments include an integrated assembly having a base supporting first circuitry and first conductive lines. The first conductive lines extend along a first direction and are associated with the first circuitry. A deck is over the base and supports an array of memory cells and second conductive lines which are associated with the array of memory cells. The second conductive lines extend along a second direction which is substantially orthogonal to the first direction. Vertical interconnects extend from the deck to the base and couple the first conductive lines to the second conductive lines. Each of the vertical interconnects couples one of the first conductive lines to one of the second conductive lines. Each of the second conductive lines is coupled with only one of the first conductive lines.

Abstract: A vertically alternating stack of insulating layers and dielectric spacer material layers is formed over a semiconductor substrate. The vertically alternating stack is patterned into a first alternating stack located at a center region of a memory die and a second alternating stack that laterally encloses the first alternating stack. Memory stack structures are formed through the first alternating stack, and portions of the dielectric spacer material layers in the first alternating stack are replaced with electrically conductive layers while maintaining the second alternating stack intact. At least one metallic wall structure is formed through the second alternating stack. An edge seal assembly is provided, which includes at least one vertical stack of metallic seal structures. Each vertical stack of metallic seal structures vertically extends contiguously from a top surface of the semiconductor substrate to a bonding-side surface of the memory die, and includes a respective metallic wall structure.

Abstract: A semiconductor device includes a plurality of memory chips arranged in a line on a substrate, and a bus connected to the plurality of memory chips and configured to sequentially supply an electrical signal to the plurality of memory chips in accordance with a fly-by topology. An order in which the electrical signal is supplied to the plurality of memory chips is different from an order in which the plurality of memory chips is arranged in the line on the substrate.

Abstract: Methods, systems, and apparatus that increase available memory or storage using active boundary areas in quilt architecture are described. A memory array may include memory cells overlying each portion of a substrate layer that includes certain types of support circuitry, such as decoders and sense amplifiers. Active boundary portions, which may be elements of the memory array having a different configuration from other portions of the memory array, may be positioned on two sides of the memory array and may increase available data in a quilt architecture memory. The active boundary portions may include support components to access both memory cells of neighboring memory portions and memory cells overlying the active boundary portions. Address scrambling may produce a uniform increase in number of available data in conjunction with the active boundary portions.

Abstract: A bonded assembly includes a memory die bonded to a support die. The memory die contains at least one three-dimensional array of memory elements, memory-die dielectric material layers, and memory-die bonding pads. The support die contains at least one peripheral circuitry including complementary metal-oxide-semiconductor (CMOS) devices and configured to generate control signals for, and receive sense signals from, the at least one three-dimensional array of memory elements and a functional module and configured to provide a functionality that is independent of operation of the at least one three-dimensional array of memory elements. The functional module may include an error correction code (ECC) module, a memory module configured to interface with an external processor module located outside of the memory die, a microprocessor unit module, a wireless communication module, and/or a system level controller module.

Abstract: A memory cell including a memory element comprising an electrolytic insulator in contact with a conductive metal oxide (CMO) is disclosed. The CMO includes a crystalline structure and can comprise a pyrochlore oxide, a conductive binary oxide, a multiple B-site perovskite, and a Ruddlesden-Popper structure. The CMO includes mobile ions that can be transported to/from the electrolytic insulator in response to an electric field of appropriate magnitude and direction generated by a write voltage applied across the electrolytic insulator and CMO. The memory cell can include a non-ohmic device (NOD) that is electrically in series with the memory element. The memory cell can be positioned between a cross-point of conductive array lines in a two-terminal cross-point memory array in a single layer of memory or multiple vertically stacked layers of memory that are fabricated over a substrate that includes active circuitry for data operations on the array layer(s).

Abstract: A system includes memory dice, each having a register to store multiple read voltage levels. A processing device is to test each memory die by verification, via access to the multiple read voltage levels, whether each read voltage level falls within a corresponding relative voltage range. The processing device selects an initial read voltage level that achieves bit error rates not satisfying a threshold criterion at one of a first or a second shortest write-to-read (W2R) delay for the memory die and determines a bit error rate, using the initial read voltage level, of storage units of the memory die. The processing device reports the memory die as defective in response to one of: (i) a read voltage level, of the multiple read voltage levels, failing to verify; or (ii) the bit error rate of one or more storage units of the memory die satisfying the threshold criterion.

Abstract: A three-dimensional semiconductor memory device includes first to third cell array layers sequentially stacked on a substrate. Each of the first to third cell array layers includes memory cells arranged along first and second directions crossing each other and parallel to a top surface of the substrate. Each of the memory cells includes a variable resistance element and a tunnel field effect transistor connected in series. The device further includes bit lines extending along the first direction between the first and second cell array layers and at least one source line extending along either the first direction or the second direction between the second and third cell array layers. The memory cells of the first and second cell array layers share the bit lines, and the memory cells of the second and third cell array layers share the source line.

Abstract: Apparatuses and processes are disclosed for a substrate-free system in package that includes a through mold via Embodiments may include providing a circuit trace layer on top of a first side of a carrier, coupling a first set of one or more surface mount components to a first side of the circuit trace layer opposite the carrier, embedding the first set of the one or more surface mount components in a molding compound, exposing a second side of the circuit trace layer opposite the first side of the circuit trace layer, and coupling one or more electrical interconnects to serve as TMVs to the second side of the circuit trace layer. Embodiments may also include exposing the second side of the circuit trace layer by grinding the carrier. Other embodiments may be described and/or claimed.

Abstract: An apparatus that includes: a control chip; a plurality of memory chips stacked on the control chip, the plurality of memory chips including first and second memory chips; and a plurality of via conductors connected between the plurality of memory chips and the control chip. Each of the first and second memory chips is divided into a plurality of channels including a first channel. The plurality of via conductors include a first via conductor electrically connected between the first channel in the first memory chip and the control chip, and a second via conductor electrically connected between the first channel in the second memory chip and the control chip. The first and second memory chips substantially simultaneously output read data read from the first channel to the first and second via conductors, respectively.

Abstract: A memory device includes active circuitry configured to process a segment set that corresponds to a source data, wherein: the source data comprises information corresponding to a device operation, the source data having a block length representing a number of bits therein, and the segment set includes at least a first segment and a second segment, the first segment and the second segment each including number of bits less than the block length; and a set of die pads coupled to the active circuitry and configured to communicate the segment set for operating a second device, wherein the set includes a number of die pads less than the block length.

Abstract: The present disclosure generally relates to storage devices comprising a memory device having a layout optimized for data failure protection. A storage device comprises a memory device having a first package and a second package disposed adjacent to the first package. The first package comprises an even number of memory die having a first storage capacity, and the second package comprises two memory die having a second storage capacity. A first half of the memory dies of the first package and a first memory die of the second package are coupled to a first channel. A second half of the memory dies of the first package and a second memory die of the second package are coupled to a second channel parallel to the first channel.

Abstract: A transparent four rank memory module has a front side and a back side. The front side has a third memory rank stacked on a first memory rank. The back side has a fourth memory rank stacked on a second memory rank. An emulator coupled to the memory module activates and controls one individual memory rank from either the first memory rank, the second memory rank, the third memory rank, or the fourth memory rank based on the signals received from a memory controller.

Abstract: Examples herein describe techniques for forming 3D stacked devices which include a redundant logical layer. The 3D stacked devices include a plurality of semiconductor chips stacked in a vertical direction such that each chip is bonded to a chip above, below, or both in the stack. In one embodiment, each chip is the same—e.g., has the same circuitry arranged in the same configuration in the chip. The 3D stacked device provides a redundant logic layer by dividing the chips into a plurality of slivers which are interconnected by inter-chip bridges. For example, the 3D stacked device may include three stacked chips that are divided into three different slivers where each sliver includes a portion from each of the chips. So long as only one of portions in a sliver is nonfunctional, the inter-chip bridges permit the other portions in the sliver to receive and route data.

Abstract: A memory system includes a first dual in-line memory module (DIMM), a second DIMM, and a controller. The first DIMM may include a first memory device including a first on-die termination (ODT) circuit connected to a data line. The second DIMM may include a second memory device including a second ODT circuit connected to the data line. The controller is connected to the first and second memory devices through the data line, generates first and second delay information, and determines whether to change an ODT duration of the first or second ODT circuit using the first and second delay information. The first delay information is indicative of a time taken for command/address or clock signals to reach the first memory device. The second delay information is indicative of a time taken for command/address signal or clock signals to reach the second memory device.

Abstract: A three-dimensional memory device includes memory stack structures in multiple memory arrays. Bit lines are split into multiple portions traversing different memory arrays. Each sense amplifier is connected to a first portion of a respective bit line via a respective first switching transistor device, and is connected to a second portion of the respective bit line via a respective second switching transistor device. The switching transistor devices connect each sense amplifier to one portion of the bit lines without connecting to another portion of the bit lines, thereby reducing the RC delay. The switching transistor devices may be provided as vertical field effect transistors located at a memory array level, or may be provided in another semiconductor chip.

Abstract: A memory system includes a controller that recognizes, as a command, a signal received immediately after a chip select signal is received from a host device, and a memory that includes a plurality of blocks. When the command is a first command, the controller outputs to the host device, information indicating whether at least one of a write operation and an erase operation with respect to at least one particular block is prohibited.

Abstract: A storage device includes: a substrate; a first conductive layer extending in a first direction; a second conductive layer adjacent to the first conductive layer in a second direction, and extending in the first direction; a third conductive layer extending in a third direction; a fourth conductive layer extending in the second direction; a fifth conductive layer disposed on the second conductive layer, extending in the third direction, and being electrically connected to the fourth conductive layer; a first storage layer disposed between the third conductive layer and the fourth conductive layer; a first semiconductor layer disposed between the first conductive layer and the third conductive layer; a second semiconductor layer disposed between the second conductive layer and the fifth conductive layer; and a first gate electrode extending in the second direction and being shared by side surfaces of the first semiconductor layer and the second semiconductor layer.

Abstract: A three-dimensional block includes a stack comprising a plurality of control gate layers configured to bias memory cells of the block. The block includes a plurality of track regions that includes three or more hookup regions. The plurality of track regions separate the memory cells into three memory cell regions. Tracks extending in the track regions supply voltages to the hookup regions. A system includes a memory plane of blocks, and a plurality of track regions, each extending across the memory plane of blocks.

Abstract: A semiconductor system includes a controller and a semiconductor device. The controller outputs a clock signal, a chip selection signal and a command/address signal. The controller includes a controller termination circuit turned on during a read operation. The controller receives first data through an input/output (I/O) line coupled to the controller termination circuit during the read operation and outputs second data through the I/O line coupled to the controller termination circuit turned off during a write operation. The semiconductor device includes an internal termination circuit turned off during the read operation, outputs the first data through the I/O line coupled to the internal termination circuit based on the chip selection signal and the command/address signal during the read operation, and stores the second data inputted through the I/O line coupled to the internal termination circuit turned on during the write operation.

Abstract: A semiconductor device is disclosed, which relates to a technology for a sense-amplifier (sense-amp) configured to compensate for mismatch of a sensing bit-line. The semiconductor device includes a sense-amplifier configured to selectively control connection between a pair of bit lines and a pair of sensing bit lines in response to a connection control signal in an offset compensation period, and precharge a pull-down power-supply line with a bit line precharge voltage level in the offset compensation period. The semiconductor device also includes a pull-down voltage controller configured to increase a voltage of the pull-down power-supply line by a predetermined level in response to a pull-down control signal in the offset compensation period.

Abstract: A memory structure formed above a semiconductor substrate includes two or more modules each formed on top of each other separated by a layer of global interconnect conductors. Each memory module may include a 3-dimensional array of memory transistors organized as NOR array strings. Each 3-dimensional array of memory transistors is provided vertical local word lines as gate electrodes to the memory transistors. These vertical local word lines are connected by the layers of global interconnect conductors below and above the 3-dimensional array of memory transistors to circuitry formed in the semiconductor substrate.

Abstract: A semiconductor device is disclosed. The semiconductor device includes a first die on a first substrate, a second die on a second substrate separate from the first substrate, a transmission line in a redistribution layer on a wafer, and a magnetic structure surrounds the transmission line. The first transmission line electrically connects the first die and the second die. The magnetic structure is configured to increase the characteristic impedance of the transmission line, which can save the current and power consumption of a current mirror and amplifier in a 3D IC chip-on-wafer-on-substrate (CoWoS) semiconductor package.

Abstract: A vertically alternating stack of insulating layers and dielectric spacer material layers is formed over a semiconductor substrate. The vertically alternating stack is patterned into a first alternating stack located at a center region of a memory die and a second alternating stack that laterally encloses the first alternating stack. Memory stack structures are formed through the first alternating stack, and portions of the dielectric spacer material layers in the first alternating stack are replaced with electrically conductive layers while maintaining the second alternating stack intact. At least one metallic wall structure is formed through the second alternating stack. An edge seal assembly is provided, which includes at least one vertical stack of metallic seal structures. Each vertical stack of metallic seal structures vertically extends contiguously from a top surface of the semiconductor substrate to a bonding-side surface of the memory die, and includes a respective metallic wall structure.

Abstract: Methods and devices are provided for fabricating a resistive random-access array having dedicated electroforming contacts. A lower conductive line is formed on an interlayer dielectric layer. A lower electrode is formed on the lower conductive line. An isolation layer is formed having an upper surface which is coplanar with an upper surface of the lower electrode. A stack structure including a metal-oxide layer and upper electrode is formed on the lower electrode. Insulating spacers are formed on sidewalls of the stack structure. The lower electrode, and stack structure form a resistive memory cell, wherein a footprint of the lower electrode is greater than that of the upper electrode. An upper conductive line contacts the upper electrode, and is arranged orthogonal to the lower conductive line. A dedicated electroforming contact contacts an extended portion of the lower electrode which extends past a cross-point of the upper and lower conductive lines.

Abstract: A microelectronic assembly can include a microelectronic package connected with a circuit panel. The package has a microelectronic element having a front face facing away from a substrate of the package, and electrically connected with the substrate through conductive structure extending above the front face. First terminals provided in first and second parallel grids or in first and second individual columns can be configured to carry address information usable to determine an addressable memory location from among all the available addressable memory locations of the memory storage array. The first terminals in the first grid can have signal assignments which are a mirror image of the signal assignments of the first terminals in the second grid.

Abstract: A semiconductor memory device includes a first memory cell array including a first memory cell that is capable of holding two or more bits of data including at least a first bit and a second bit, a second memory cell array including a second memory cell that is capable of holding two or more bits of data including at least a first bit and a second bit, a first word line electrically connected to a gate of the first memory cell, and a second word line electrically connected to a gate of the second memory cell. In a read operation, at least first, second, and third voltages are applied successively to both the first word line and the second word line to read a first page including the first bit of the first memory cell and a second page including the second bit of the second memory cell.

Abstract: A memory device includes first and second memory arrays, first and second bit line driving circuits, first and second word line driving circuits, a read/write circuit, a controller, and first and second reference driving circuits. The first and second memory arrays include several memory units. The first and second bit line driving circuits are configured to interpret a memory bit address and drive a bit line. The first and second word line driver circuits are configured to interpret the memory word address and drive the word line. The read/write circuit is configured to read, set or reset the memory units. The controller is configured to switch the first and second memory arrays to work in a single memory unit mode or a dual memory unit mode. The first and second reference driving circuits are configured to drive reference rows.

Abstract: The present disclosure is related to printed circuit board packages and methods of assembly that may be used in the fabrication of electrical devices. Printed circuit board packages may be manufactured by stacking printed circuit board assemblies. Each printed circuit board assembly may have multiple printed circuit boards supported by a resin mold. The printed circuit board assemblies may be shaped to improve space utilization efficiency and to accommodate large electrical components that are attached to the printed circuit board package.

Abstract: A memory system includes N core dies (N: an integer greater than one) stacked in a vertical direction and including N respective memory circuits having a same structure, a control circuit configured to supply N write data to the N respective memory circuits, an address generating circuit configured to generate a single common address as write addresses at which the N write data are to be stored in the N respective memory circuits, and an address conversion circuit configured to convert the single common address to generate N addresses which are different for the N respective memory circuits and to supply the N addresses as write addresses to the N respective memory circuits.