Abstract: A method to program a programmable resistance memory cell includes performing one or more iterations until a verifying passes. The iterations include a) applying a programming pulse to the memory cell, and, b) after applying the programming pulse, verifying if the resistance of the memory cell is in a target resistance range. After an iteration of the one or more iterations in which the verifying passes, c) a stabilizing pulse with a polarity the same as the programming pulse is applied to the memory cell. After applying the stabilizing pulse, a second verifying determines if the resistance of the programmable element is in the target resistance range. Iterations comprising steps a), b), c), and d) are performed until the second verifying passes. Methods and apparatus are described to program a plurality of such cells, including applying a stabilizing pulse of the same polarity after programming.

Abstract: An intelligent connector module assembly is disclosed. The intelligent connector module assembly has a master control module, at least one first execution component, and an intelligent connector module. The intelligent connector module has a communication and control unit connected to and configured to receive a control signal from the master control module, and a first switch array and drive unit connected to the communication and control unit and to the at least one first execution component. The first switch array and drive unit controls operation of the first execution component in response to the control signal received by the communication and control unit.

Abstract: A storage device includes a cross-point non-volatile memory (NVM) device that includes a first subset of cells. Cells of the first subset of cells may share either a bitline or a wordline. There may be at least one buffer cell on a respective bitline or wordline between each adjacent pair of cells from the first subset of cells. The storage device includes a control module. The control module is configured to receive a set of I/O operations. The control module is configured to execute a first subset of the set of I/O operations in parallel across the first subset of cells of the cross-point memory component. The control module may execute the first subset of the set of I/O operations such that I/O operations are not executed at the respective buffer cells.

Abstract: A microelectronic package can include a substrate having first and second surfaces, first, second, and third microelectronic elements each having a surface facing the first surface, terminals exposed at the second surface, and leads electrically connected between contacts of each microelectronic element and the terminals. The substrate can have first, second, and third spaced-apart apertures having first, second, and third parallel axes extending in directions of the lengths of the apertures. The contacts of the first, second, and third microelectronic elements can be aligned with one of the first, second, or third apertures. The terminals can include first and second sets of first terminals configured to carry address information. The first set can be connected with the first and third microelectronic elements and not with the second microelectronic element, and the second set can be connected with the second microelectronic element and not with the first or third microelectronic elements.

Abstract: A packaged semiconductor device includes a data pin, a first memory die, and a second memory die stacked with the first memory die. The first memory die includes a first data interface coupled to the data pin and a first memory core having a plurality of banks. The second memory die includes a second memory core having a plurality of banks. A respective bank of the first memory core and a respective bank of the second memory core perform parallel row access operations in response to a first command signal and parallel column access operations in response to a second command signal. The first data interface of the first die provides aggregated data from the parallel column access operations in the first and second die to the data pin.

Abstract: A plurality of alternating stacks laterally spaced apart by line trenches is provided over a substrate. Each alternating stack includes respective word lines and respective dielectric material layers. An alternating sequence of vertical bit lines and inter-bit-line cavities is formed within each of the line trenches. Resistive memory material layers including resistive memory elements are provided at intersection regions between the word lines and the vertical bit lines. Air gaps are formed by removing at least a predominant portion of each of the dielectric material layers selective to the word lines, the vertical bit lines, and the resistive memory material layers, thereby forming a plurality of alternating stacks of the word lines and air gaps. A dielectric isolation layer including vertically-extending voids can be formed over the plurality of alternating stacks in the inter-bit-line cavities.

Abstract: A semiconductor device is disclosed. The semiconductor device includes an electrode disposed on a substrate and a plurality of vertical patterns passing through the electrode. The vertical patterns include first vertical patterns arranged to form a rhombus and second vertical patterns arranged to form a non-regular trapezoid or a rhombus.

Abstract: A control device coupled between a first memory and a second memory and including an execution unit, a first storage unit, a second storage unit, a selection unit and a processing unit is disclosed. The execution unit executes a specific instruction set to access the first and the second memories. The first storage unit is configured to store a first instruction set. The second storage unit is configured to store a second instruction set. The selection unit outputs one of the first and the second instruction sets to serve as the specific instruction set according to a control signal. The processing unit generates the control signal according to an execution state of the execution unit.

Abstract: A semiconductor memory solves performance degradation of a memory device caused by performance of memory functions different depending on a position of a memory cell array. In the memory cell array including memory cells in each of which a memory element is electrically connected to one of a source and a drain of a cell transistor, the cell transistor includes at least two types with different current driving capability according to a position in the memory cell array.

Abstract: A non-volatile data storage device comprises pairs of immediately adjacent and isolated-from-one-another local bit lines that are independently driven by respective and vertically oriented bit line selector devices. The isolation between the immediately adjacent and isolated-from-one-another local bit lines also isolates from one another respective memory cells of the non-volatile data storage device such that leakage currents cannot flow from memory cells connected to a first of the immediately adjacent and isolated-from-one-another local bit lines to memory cells connected to the second of the pair of immediately adjacent and isolated-from-one-another local bit lines. A method programming a desire one of the memory cells includes applying boosting voltages to word lines adjacent to the bit line of the desired memory cell while not applying boosting voltages to word lines adjacent to the other bit line of the pair.

Abstract: A stacked semiconductor device is disclosed that includes a plurality of semiconductor dies. Each die has oppositely disposed first and second surfaces, with pads formed on each of the surfaces. A plurality of through-vias connect respective pads on the first surface to respective pads on the second surface. The through-vias include a first group of through-vias coupled to respective I/O circuitry on the semiconductor die and a second group of through-vias not coupled to I/O circuitry on the semiconductor die. The plurality of semiconductor dies are stacked such that the first group of through-vias in a first one of the plurality of semiconductor dies are aligned with respective ones of at least a portion of the second group of through-vias in a second one of the plurality of semiconductor dies.

Abstract: A memory device includes a plurality of NAND flash chips, a dynamic random access memory (DRAM) portion in data communication with the NAND flash chips, and a controller. Each NAND flash chip has a first storage capacity, and includes a memory section, each memory section including a plurality of pages. The DRAM portion has a second storage capacity that is at least as large as the first storage capacity. The controller is configured to select one of the NAND flash chips as a currently selected NAND flash chip for writing data, copy all valid pages in the currently selected NAND flash chip into the DRAM portion, and, in response to a write request to a logical memory location mapped to a particular physical location in one of the NAND flash chips, allocate the currently selected NAND flash chip for writing to a particular page that includes the particular physical location.

Abstract: A memory array includes wordlines, local bitlines, two-terminal memory elements, global bitlines, and local-to-global bitline pass gates and gain stages. The memory elements are formed between the wordlines and local bitlines. Each local bitline is selectively coupled to an associated global bitline, by way of an associated local-to-global bitline pass gate. During a read operation when a memory element of a local bitline is selected to be read, a local-to-global gain stage is configured to amplify a signal on or passing through the local bitline to an amplified signal on or along an associated global bitline. The amplified signal, which in one embodiment is dependent on the resistive state of the selected memory element, is used to rapidly determine the memory state stored by the selected memory element. The global bit line and/or the selected local bit line can be biased to compensate for the Process Voltage Temperature (PVT) variation.

Abstract: A memory-array is disclosed in which an array of threshold switching devices is constructed having an area per transistor of 2F2. This array of threshold switching devices is suitable for a variety of memory or other applications including PRAM, MRAM, RRAM, FRAM, OPT-RAM and 3-D memory.

Abstract: A semiconductor device includes bit lines extending along a first direction, the bit lines being arranged along a second direction intersecting the first direction, a plurality of channel layers disposed under the bit lines, the plurality of channel layers extending in a third direction perpendicular to a plane extending along the first and second directions and spaced apart along the second direction, so that each channel layer is at least partially overlapped with at least two of the bit lines, and a contact plug extending, from the channel layer, toward one of the bit lines overlapped with the channel layer.

Abstract: According to one embodiment, a semiconductor memory system includes a substrate, a plurality of elements and an adhesive portion. The substrate has a multilayer structure in which wiring patterns are formed, and has a substantially rectangle shape in a planar view. The elements are provided and arranged along the long-side direction of a surface layer side of the substrate. The adhesive portion is filled in a gap between the elements and in a gap between the elements and the substrate, where surfaces of the elements are exposed.

Abstract: A device includes a first strap cell, a first data line, and a second data line. The first strap cell is arranged between a first row of memory cells and a second row of memory cells in a memory array. A first portion of the first data line is configured to transmit data to or from a first memory cell in the first row of memory cells. The second data line and a second portion of the first data line are configured to transmit data to or from a second memory cell in the second row of memory cells.

Abstract: A stacked memory chip includes a chip input-output pad unit, a first semiconductor die and a second semiconductor die. The chip input-output pad unit includes a chip command-address pad unit, a lower chip data pad unit and an upper chip data pad unit that are to be connected to an external device. The first semiconductor die electrically is connected to the chip command-address pad unit and the lower chip data pad unit and electrically disconnected from the upper chip data pad unit. The second semiconductor die electrically is connected to the chip command-address pad unit and the upper chip data pad unit and electrically disconnected from the lower chip data pad unit. The input-output load may be reduced by selectively connecting each of the stacked semiconductor dies to one of the lower chip data pad unit and the upper chip data pad unit.

Abstract: In one example, a three dimensional resistive memory architecture includes adjacent memory tiles with each tile including a multilevel resistive crossbar array and at least one decoder. The multilevel crossbar array includes layers of row crossbars, layers of column crossbars, and layers of resistive memory elements interposed between cross points of the row crossbars and the column crossbars, in which at least one layer of crossbars extends from a first tile through an adjacent tile and is used to address resistive memory elements in the adjacent tile. The at least one decoder underlies the multilevel resistive crossbar array and includes an address matrix comprising digital lines and analog lines, in which the digital lines select which crossbars are connected to the analog lines.

Abstract: A nonvolatile memory includes a memory cell array including a plurality of memory cells, a pad configured to be connected to a data input/output line, and an input/output circuit configured to receive data to be programmed in the memory cell array and to transmit data read from the memory cell array. The nonvolatile memory further includes a switch configured to couple and decouple the pad and the input/output circuit responsive to a switch control signal and a control circuit configured to generate the switch control signal responsive to a chip enable signal. Data storage devices and methods using such nonvolatile memories are also described.

Abstract: An apparatus including semiconductor dies in a stack. The semiconductor dies are configured to power-up in a staggered manner. Methods for powering up an electronic device include detecting a power-up event with the semiconductor dies in the stack, and responsive to the power-up event, powering up a first semiconductor die in the stack at a first time, and powering up a second semiconductor die in the stack at a second time that is different from the first time.

Abstract: A non-volatile memory device with multiple latency tiers includes at least two crossbar memory arrays, each crossbar memory array comprising a number of memory cells, each memory cell connected to a word line and a bit line at a cross point. The crossbar memory arrays each have a different latency. The crossbar memory arrays are formed on a single die.

Abstract: An apparatus includes a memory module socket having a base end and a branching point. The base end is coupled to a printed circuit board (PCB). The branching point is external to the PCB. A first branch extends from the branching point at an angle ?1, where 90 degrees??1<180 degrees, and a second branch extends from the branching point at an angle ?2, where 90 degrees??2<180 degrees. A method includes signaling between the PCB and a first memory module and a second memory module via a base end of the memory module socket. The memory module socket connects to the PCB via the base end. The signaling is branched at a branching point of the memory module socket to the first memory module via a first branch and to the second memory module via a second branch. The branching is external to the PCB.

Abstract: A semiconductor memory device includes string select lines extending in a first direction, vertical pillars connected to the string select lines, sub-interconnections on the string select lines, bitlines connected to the vertical pillars through the sub-interconnections, and upper contact plugs connecting the sub-interconnections to the bitlines. The string select lines include odd and even string select lines alternately arranged in a second direction. The sub-interconnections each connect a pair of vertical pillars respectively connected to one of the odd string select lines and one of the even string select lines that are adjacent to each other. Each of the upper contact plugs is between one of the sub-interconnections and one of the bitlines. Each of the upper contact plugs is arranged more adjacent to one string select line of the adjacent string select lines to which the pair of vertical pillars connected by the sub-interconnections are connected.

Abstract: Embodiments of the present disclosure are directed toward techniques and configurations for electrical signal absorption in an interconnect disposed in a printed circuit board (PCB) assembly. In one instance, a PCB assembly may comprise a substrate, and an interconnect formed in the substrate to route an electrical signal within the PCB. The interconnect may be coupled with a connecting component that is disposed on a surface of the PCB. An absorbing material may be disposed on the PCB to be in direct contact with at least a portion of the connecting component to at least partially absorb a portion of the electrical signal. Other embodiments may be described and/or claimed.

Abstract: A semiconductor memory device includes a memory array including a plurality of element blocks, the plurality of element blocks including end-portion element blocks arranged at an end portion of the memory array, and at least one dummy block disposed adjacent to the end-portion element blocks, the at least one dummy block being not in practical use. A layout pattern of the at least one dummy block is configured to correspond to only a portion of a layout pattern of the plurality of element blocks.

Abstract: According to one embodiment, a memory device includes first to third interconnects, memory cells, and selectors. The first to third interconnects are provided along first to third directions, respectively. The memory cells includes variable resistance layers formed on two side surfaces, facing each other in the first direction, of the third interconnects. The selectors couple the third interconnects with the first interconnects. One of the selectors includes a semiconductor layer provided between associated one of the third interconnects and associated one of the first interconnects, and gates formed on two side surfaces of the semiconductor layer facing each other in the first direction with gate insulating films interposed therebetween.

Abstract: Some embodiments include a device having an array of memory cells, a memory control unit at least partially under the array, row decoder circuitry in data communication with the memory control unit, and column decoder circuitry in data communication with the memory control unit. Some embodiments include a device having an array of memory cells, row decoder circuitry and column decoder circuitry. One of the row and column decoder circuitries is within a unit that extends at least partially under the array of memory cells and the other within a unit that is laterally outward of the array of memory cells.

Abstract: A memory device which can be configured as a 3D NAND flash memory, includes a plurality of stacks of conductive strips, including even stacks and odd stacks having sidewalls. Some of the conductive strips in the stacks are configured as word lines. Data storage structures are disposed on the sidewalls of the even and odd stacks. Active pillars between corresponding even and odd stacks of conductive strips include even and odd semiconductor films having outside surfaces and inside surfaces, the outside surfaces disposed on the data storage structures on the sidewalls of the corresponding even and odd stacks in the plurality of stacks forming a 3D array of memory cells, the inside surfaces are separated by an insulating structure that can include a gap. The semiconductor films can be thin-films.

Abstract: A semiconductor storage device having a plurality of low power consumption modes is provided. The semiconductor storage device includes a plurality of memory modules where a plurality of low power consumption modes can be set and cancelled based on a first and a second control signals. At least a part of memory modules of the plurality of memory modules have a propagation path that propagates an inputted first control signal to a post stage memory module. The second control signal is inputted into each of the plurality of memory modules in parallel. Setting and cancelling of the first low power consumption mode of each memory module are performed based on a combination of the first control signal that is propagated through the propagation path and the second control signal.

Abstract: Some embodiments include a construction having a first memory array deck and a second memory array deck over the first memory array deck. The second memory array deck differs from the first memory array deck in one or more operating characteristics, in pitch, and/or in one or more structural parameters; with the structural parameters including different materials and/or different thicknesses of materials. Some embodiments include a construction having a first series and a third series of access/sense lines extending along a first direction, and a second series of access/sense lines between the first and third series and extending along a second direction which crosses the first direction. First memory cells are between the first and second series of access/sense lines and arranged in a first memory array deck. Second memory cells are between the second and third series of access/sense lines and arranged in a second memory array deck.

Abstract: A semiconductor integrated circuit according to an embodiment includes a plurality of first wiring lines electrically connected to a plurality of input wiring lines; a plurality of second wiring lines electrically connected to a plurality of output wiring lines, the second wiring lines crossing the first wiring lines; and a plurality of cell arrays each of which includes memory elements disposed at intersection regions of a part of the first wiring lines and a part of the second wiring lines, each of the memory elements including a first terminal and a second terminal, the first terminal being electrically connected to one of the first wiring lines, the second terminal being electrically connected to one of the second wiring lines, and each of the second wiring lines being electrically connected to at most one of the cell arrays.

Abstract: Provided is a semiconductor device having as many input/output pads as possible using a chip having a small number of input/output pads. The semiconductor device includes a substrate including first and second extending input/output pads, a first memory structure disposed on the substrate and including first connecting input/output pads, a second memory structure disposed on the first memory structure and including second connecting input/output pads, and a wiring structure formed on lateral surfaces of the first and second memory structures and connecting the first and second connecting input/output pads and the first and second extending input/output pads, respectively; wherein the wiring structure includes a first wiring connecting the first connecting input/output pads and the first extending input/output pad and a second wiring connecting the first connecting input/output pads and the second extending input/output pad, and the second wiring is offset relative to the first wiring.

Abstract: A semiconductor integrated circuit includes a plurality of semiconductor chips stacked in a multi-layer structure; a correction circuit in each semiconductor chip configured to reflect a delay time corresponding to the position of the chip in the stack into an input signal to output to each semiconductor chip; and a plurality of through-chip vias formed vertically through each of the semiconductor chips and configured to transmit the input signal to the semiconductor chip.

Abstract: A method is provided that includes forming a dielectric material above a substrate, forming a hole in the dielectric material, the hole disposed in a first direction, forming a word line layer above the substrate via the hole, the word line layer disposed in a second direction perpendicular to the first direction, forming a nonvolatile memory material on a sidewall of the hole, forming a local bit line in the hole, and forming a memory cell including the nonvolatile memory material at an intersection of the local bit line and the word line layer.

Abstract: The present invention discloses a mixed three-dimensional printed memory (3D-P). The slow contents (e.g., digital books, digital maps, music, movies, and/or videos) are stored in large memory blocks and/or large memory arrays, whereas the fast contents (e.g., operating systems, software, and/or games) are stored in small memory blocks and/or small memory arrays.

Abstract: An apparatus is provided that includes a plurality of array dies and at least two die interconnects. The first die interconnect is in electrical communication with a data port of a first array die and a data port of a second array die and not in electrical communication with data ports of a third array die. The second die interconnect is in electrical communication with a data port of the third array die and not in electrical communication with data ports of the first array die and the second array die. The apparatus includes a control die that includes a first data conduit configured to transmit a data signal to the first die interconnect and not to the second die interconnect, and at least a second data conduit configured to transmit the data signal to the second die interconnect and not to the first die interconnect.

Abstract: According to one embodiment, a semiconductor memory device includes a plurality of first resistance-change memory elements of a two-terminal type, a second resistance-change memory element of a two-terminal type, a rectifier element of a two-terminal type, a local bit line connected to ends of the first resistance-change memory elements, an end of the second resistance-change memory element and an end of the rectifier element, and a global bit line connected to the other end of the second resistance-change memory element.

Abstract: [Problem] To provide a semiconductor device suitable for miniaturization. To provide a highly reliable semiconductor device. To provide a semiconductor device with improved operating speed. [Solving Means] A semiconductor device including a memory cell including first to cth (c is a natural number of 2 or more) sub memory cells, wherein: the jth sub memory cell includes a first transistor, a second transistor, and a capacitor; a first semiconductor layer included in the first transistor and a second semiconductor layer included in the second transistor include an oxide semiconductor; one of terminals of the capacitor is electrically connected to a gate electrode included in the second transistor; the gate electrode included in the second transistor is electrically connected to one of a source electrode and a drain electrode which are included in the first transistor; and when j?2, the jth sub memory cell is arranged over the j?1th sub memory cell.

Abstract: A differential PCM memory may include first and second PCM elements, and a sense amplifier circuit configured to sense a difference between first and second sense currents passing through the first and second PCM elements, respectively, during a sense operation. The differential PCM memory may include a first margin current branch coupled in parallel with the first PCM element and configured to selectively add a first margin current to the first sense current, and a second margin current branch coupled in parallel with the second PCM element and configured to selectively add a second margin current to the second sense current.

Abstract: An integrated circuit includes a core area. The core area has at least one edge region and a plurality of transistors disposed in the edge region. A plurality of dummy structures are disposed outside the core area and adjacent to the at least one edge region. Each channel of the transistors in a channel width direction faces at least one of the dummy structures.

Abstract: A resistor switching circuit, a storage circuit and a consumable chip. The resistor switching circuit is used in the consumable chip, and includes a plurality of resistor switching branch circuits, the resistor switching branch circuit including a switching switch and a resistor, the switching switch and the resistor being connected in series in a conducting loop of a signal wire; and a decoder, connected to a data storage module in the consumable chip, and used for generating a switching instruction according to a signal output by the data storage module to control a switching switch of a corresponding resistor switching branch circuit to put a corresponding resistor into the conducting loop of the signal wire, so as to change a resistance value of the conducting loop of the signal wire.

Abstract: A through-silicon via access device (TSVAD) for establishing an electrical connection to a through-silicon via (TSV) located in a planar stack of semiconductor chips is disclosed. The TSVAD may include a switching circuit, having a conductive pad terminal, a TSV terminal, an input terminal coupled to a sending logic circuit, an output terminal coupled to a receiving logic circuit, and logic devices to, in response to control signals, couple the TSV terminal to the conductive pad terminal, in one configuration, and couple the TSV terminal to another terminal in another configuration. The TSVAD may also include a control circuit to generate control signals to cause an input selection circuit to drive a signal from the sending logic circuit onto the input terminal, and to cause an output selection circuit to drive a logic signal from the output terminal to the receiving logic circuit.

Abstract: An apparatus includes a printed circuit board with a plurality of printed circuit board traces, a memory controller mounted on the printed circuit board coupled to one or more of the plurality of printed circuit board traces, a plurality of non-volatile type of memory integrated circuits coupled to the printed circuit board, and a plurality of support integrated circuits coupled between the memory controller and the plurality of non-volatile type of memory integrated circuits.

Abstract: A semiconductor memory device according to an embodiment comprises: when three directions intersecting each other are assumed to be first through third directions, and two directions intersecting each other in a plane extending in the first and second directions are assumed to be fourth and fifth directions, a memory cell array including: a conductive layer stacked in the third direction above a semiconductor substrate and having a first region; and a first columnar body penetrating the first region of the conductive layer in the third direction and including a semiconductor film, the first columnar body having a cross-section along the first and second directions in which, at a first position which is a certain position in the third direction, a length in the fourth direction is shorter than a length in the fifth direction.

Abstract: The present disclosure generally relates to a structure, system, and method for manufacturing an electrical component for a memory device. For example, depositing alternating layers of conductive and insulator materials over an etch stop layer to create a vertical stack, etching a trench through the vertical stack to expose the etch stop layer, electroplating the conductive layers using a plating material based on a desired electrical behavior, and forming a connection between the plating materials for each of the conductive layers.

Abstract: In a data storage system including a non-volatile memory array, a controller repeatedly determines at least one health metric of the non-volatile memory array during an operating lifetime of the non-volatile memory array. In response to determining the at least one health metric, the controller selectively varies an erase parameter of the non-volatile memory array over the operating lifetime of the non-volatile memory array, such that endurance of the non-volatile memory array is improved.

Abstract: Techniques for charge reuse in an integrated circuit. A processor may include a first logic circuit coupled to a source power supply node, a second logic circuit coupled to a destination power supply node, and a charge reuse circuit that selectively transfers charge from the first logic circuit to the second logic circuit. The charge reuse circuit may include an equalization device that selectively couples the source power supply node to the destination power supply node, and an equalization activation circuit that activates the equalization device in response to detecting assertion of an equalization control signal and further detecting that a voltage differential between the source power supply node and the destination power supply node is above a threshold value. The equalization activation circuit also prevents coupling of either the source power supply node or the destination power supply node to ground during activation of the equalization device.

Abstract: A first patterned stack and a second patterned stack are formed over a substrate, each of which includes a bottom semiconductor layer, a bottom dielectric spacer layer, a conductive material layer, and a top dielectric spacer layer. Gate dielectrics and vertical semiconductor portions are sequentially formed on each patterned stack. Vertical semiconductor portions are removed from around the second patterned stack, while masked around the first patterned stack. Electrical dopants are introduced to top regions and bottom regions of the remaining vertical semiconductor portions to form a vertical switching device that includes the first patterned stack, while the second patterned stack functions as a horizontal interconnect structure. The vertical switching device can be a transistor or a gated diode.

Abstract: Disclosed is an integrated circuit module that includes a first die having a plurality of hot regions and at least one cool region when operating under normal conditions. The first die with a top surface includes at least one power amplifier that resides in the plurality of hot regions. The integrated circuit module also includes a second die. The second die has a bottom surface, which is adhered to the top surface of the first die, wherein any portion of the bottom surface of the second die that is adhered to the top surface of the first die resides exclusively on the at least one cool region. In at least one embodiment, the first die is an RF power amplifier die and the second die is a controller die having control circuitry configured to control the at least one power amplifier that is an RF power amplifier type.