Abstract: An optical module including a temperature measurement module and an optical part having a temperature dependency. The module includes a temperature control part mounted directly or indirectly on the optical part and the temperature measurement part for controlling a temperature of the optical part and the measurement part by thermal contact. An adjustment system is also provided for adjusting a difference of the temperature of the optical part and the measurement part by controlling the heat flow into/out of the optical part or the measurement part.

Abstract: A semiconductor laser device aimed to be reduced in size and that can maintain high position accuracy, and a fabrication method of such a semiconductor laser device are achieved. A semiconductor laser device includes a stem as a base member, and a cap member. The stem includes a main unit having a reference plane, and a heat sink platform as an element mount unit, located on the reference plane for mounting a laser element. The cap member is set on the reference plane of the stem so as to cover the heat sink platform. A hole is formed at the sidewall of the cap member facing the heat sink platform. Fixation between the cap member and the stem is established by fixedly attaching the portion at the inner side of the sidewall of the cap member adjacent the hole to the outer circumferential plane of a heat sink platform.

Abstract: A semiconductor laser device according to the present invention includes a mechanism section having a semiconductor laser, a first frame for holding the mechanism section and radiating heat generated in the mechanism section, a control section for controlling the mechanism section, a second frame for holding the control section and radiating heat generated in the control section, and a coupling section for insulatively coupling the first frame to the second frame.

Abstract: A method and apparatus for controlling bias and alignment in an optical signal transmitter for providing intensity modulation and DPSK modulation to an optical signal, e.g. in an RZ-DPSK modulation format. Output power in dither signals applied to the bias signals may be detected by a low speed photodetector. One or more of the bias signals may be adjusted in a low speed control loop in response to an error signal obtained by mixing the detected signal with the low frequency dither signals.

Abstract: A surface-emitting type semiconductor laser includes: a first mirror; an active layer formed above the first mirror; a second mirror formed above the active layer; and a current constricting section formed above or below the active layer, wherein the second mirror has a plurality of concave sections arranged within a plane perpendicular to a light emission direction, and a light confining region surrounded by the concave sections is formed inside a region surrounded by the current constricting section as viewed in a plan view.

Abstract: Methods and apparatus for broad tuning of single wavelength quantum cascade lasers and the use of light output from such lasers for highly sensitive detection of trace gases such as nitrogen dioxide, acetylene, and vapors of explosives such as trinitrotoluene (TNT) and triacetone triperoxide (TATP) and TATP's precursors including acetone and hydrogen peroxide. These methods and apparatus are also suitable for high sensitivity, high selectivity detection of other chemical compounds including chemical warfare agents and toxic industrial chemicals. A quantum cascade laser (QCL) system that better achieves single mode, continuous, mode-hop free tuning for use in L-PAS (laser photoacoustic spectroscopy) by independently coordinating gain chip current, diffraction grating angle and external cavity length is described. An all mechanical method that achieves similar performance is also described. Additionally, methods for improving the sensor performance by critical selection of wavelengths are presented.

Abstract: There is provided a solid-state laser apparatus, including a solid-state active element (4) having major surfaces and first and second edges (10,12) oppositely disposed to each other, the first edge (10) being flat and the second edge (12) being constituted by first and second perpendicularly disposed surfaces (12) or having first and second perpendicularly disposed surfaces (12) located adjacent to the second edge, a back reflector (16) and an output coupler (18) located at, or adjacent to, the first edge (10). Light induced in the cavity forms two parallel beams passing therethrough, by means of a first beam which is reflected by the back reflector (16) towards a first of the perpendicularly disposed surfaces and being folded to pass on to the second surface, to be further folded and to proceed towards the first edge (10). A saturable absorber (14) may be attached to the first edge (10).

Abstract: A nitride semiconductor device includes a stem. A heat sink is provided on the stem. At least one nitride semiconductor light-emitting element is connected to the heat sink. A light-detecting element for detecting light from the semiconductor light-emitting element is provided on the stem. A cap for encapsulating therein the heat sink, the semiconductor light-emitting element, and the light-detecting element in a sealed manner is connected to the stem. The space in the cap has an encapsulated atmosphere. The encapsulated atmosphere contains a component for inhibiting diffusion of hydrogen atoms contained in the semiconductor light-emitting element. The present invention suppresses defect due to an increase in operation voltage to increase a ratio of good goods thereby improving the fabrication yield of the semiconductor light-emitting device.

Abstract: A laser oscillator includes a light condensing block having a through-hole for housing a laser medium, and an aperture for introducing excitation light from an excitation light source module into the through-hole; an end plate fixed to an end of the light condensing block, in which a cooling water channel for leading cooling water to the light condensing block and a cooling water channel for leading cooling water to the excitation light source module are formed; and a flow tube fixed and sealed by the end plate, for forming a cooling water passage for the laser medium; and an excitation light source module in which a cooling water channel, communicating with the water channel for the excitation light source module in the end plate, is formed for cooling its excitation light source.

Abstract: A directly cooled diode-laser bar package includes a diode-laser bar bonded to a heat-sink. The operating temperature of the diode-laser bar can be selectively varied by varying the thermal impedance of the heat-sink in or near a region of the heat-sink on which the diode-laser bar is bonded. The thermal impedance is selectively varied by varying the insertion depth of screws inserted into corresponding screw holes extending into the heat-sink close to or immediately adjacent the region on which the diode-laser bar is bonded.

Abstract: Provided is a pump laser integrated vertical external cavity surface emitting laser (VECSEL). The VECSEL may include a surface emitting laser unit including a first active layer having a multiple quantum well structure emitting light having a first wavelength, a reflective layer may be formed on the first active layer, and an external mirror may be disposed opposite to a lower surface of the first active layer and defining a cavity resonator together with the reflective layer. A pump laser unit may be formed on a part of the surface emitting laser unit and may have a perpendicular light emissive surface emitting a pump beam having a second wavelength for exciting the first active layer. A beam reflector may be formed on the light emissive surface of the pump laser unit and reflecta pump beam that is incident from the pump laser unit to the first active layer.

Abstract: In a method for stabilizing an optical output of a semiconductor laser: the semiconductor laser is heated with a heater when the semiconductor laser is not in operation; and the heating of the semiconductor laser is stopped, or the amount of heat supplied to the semiconductor laser is lowered, almost simultaneously with startup of the semiconductor laser.

Abstract: A semiconductor laser device including an edge-emitting type laser chip having at least three emitting points in one light emitting edge, a sub-mount mounted with the laser chip, and a heat sink bonded to the sub-mount through a solder layer. When R designates a linear expansion coefficient ratio of the heat sink to the sub-mount and D designates a distance between light emitting points at opposite ends in the light emitting edge of the laser chip, materials of the sub-mount and the heat sink and the distance D are set to satisfy the following relation: D?5.48×R?2.13 A difference between stress acting on one laser element and another in the laser chip due to shrinkage of the heat sink when melted solder is cooled down is reduced so that a difference in light output characteristics between one light emitting point and another can be reduced.

Abstract: Disclosed is an optical semiconductor device that provides an optical gain or optical loss depending on application of electric current. The optical semiconductor device comprises: a lower clad layer; an active layer disposed on the lower clad layer, the active layer generating optical gain or optical loss depending on injection of carriers; an upper clad layer disposed on the active layer, the upper clad layer serving to trap light in the active layer in cooperation with the lower clad layer; and a temperature control part for controlling the temperature distribution of the active layer along the light propagation axis in such a manner that temperature of the active layer varies depending on positions in the active layer.

Abstract: Expansion-adapted mounting and electrical contacting of laser diode elements are connected with one another in terms of structural engineering such that the laser diode elements can be stacked or arranged laterally in one plane for producing vertical diode laser arrangements with low production complexity. The upper and the lower layers of a heat-distributing multilayer substrate for a diode laser subelement, between which a separating layer is disposed, contain metal strata regions arranged spaced from one another of which for forming strata region pairs each strata region of the upper layer is joined electrically conducting to a strata region of the lower layer. The separating layer contains at least one electrically insulating stratum made of non-metallic material and the sum of the thicknesses of metallic strata in the multilayer substrate exceeds the sum of the thicknesses of non-metallic strata at least in a partial region perpendicular to the mounting surface for at least one laser diode element.

Abstract: A semiconductor blue-light-laser apparatus for emitting laser beams with high positional accuracy, which is achieved by mounting a semiconductor laser element on a semiconductor substrate with high accuracy and reliability, and a production method of the apparatus. A recess in a surface of the substrate has a p-type layer 100, which is coated with the SiN layer 105, Ti layers 110a and 110b, Au layers 111a and 111b, heat sink layer 113, and solder layer 114. Semiconductor laser element 10 is placed and fixed on Au layer 111b. Heat sink layer 113 is inserted between Au layer 111a and Ti layer 110b and is approximately 20 ?m thick. Reflection unit 50 for reflecting laser beams LB includes at the surface thereof Al layer 116 and dielectric layer 117 as a reflection layer that provides a high refractive index for blue light laser beams.

Abstract: A laser diode package includes a heat sink, a laser diode, and an electrically nonconductive (i.e. insulative) substrate. The laser diode has an emitting surface and a reflective surface opposing the emitting surface. The laser diode further has first and second side surfaces between the emitting and reflective surfaces. The heat sink has an upper surface and a lower surface. The first side surface of the laser diode is attached to the heat sink adjacent to the upper surface. The substrate is attached to the lower surface of the heat sink. The heat sink is made of heat conducting metal such as copper and the substrate is preferably made from gallium arsenide. The substrate is soldered to the heat sink as is the laser diode bar. Due to the presence of the substrate at the lower end of the heat sink, each individual laser diode package has its own electrical isolation. Several packages can be easily attached together to form a laser diode array.

Abstract: An optical transmitting and/or receiving device has a semiconductor component with a first contact for connecting to a reference voltage and a second contact for obtaining or supplying a high-frequency electrical signal. There is also an electrically conducting carrier substrate with a first surface and a second surface. The semiconductor component is configured on the first surface of the carrier substrate. The second surface of the carrier substrate has a metallization that can be connected to a reference voltage applied by an electrical path through the carrier substrate to a first contacting region of the first surface of the carrier substrate. The first contact of the semiconductor component is electrically connected to the first contacting region.

Abstract: A semiconductor device integrated with optoelectronic components includes a carrier board with at least two openings; a first and a second optoelectronic component disposed in the openings respectively, each of them having an active surface and an opposite non-active surface, wherein the active surface has a plurality of electrode pads and an optical active area; a dielectric layer formed on a surface of the carrier board and the active surfaces, and having a plurality of vias and openings to expose the electrode pads and the optical active areas respectively; and a circuit layer formed on a surface of the dielectric layer and electrically connected to the electrode pads directly.

Abstract: There is provided a semiconductor laser device capable of reducing stress occurring to a semiconductor laser element so that a life of the semiconductor laser device can be prolonged. In this semiconductor laser device, a solder layer 114 is absent over a first region R1 ranging to a specified length L1 in a perpendicular direction X from a center line J1 of a light-emitting region 150 toward both sides of the perpendicular direction X. That is, the first region R1 over which the light-emitting region 150 is present serves as an incomplete bonding region between the solder layer 114 of the semiconductor laser element 100 and a heat sink 200. Thus, stress given to the light-emitting region 150 due to differences in coefficient of thermal expansion among the semiconductor laser element 100, the solder layer 114 and the heat sink 200 during operation is reduced.

Abstract: A vertical cavity surface emitting laser (VCSEL) module that is configured to operate in a wide temperature range without severely minimizing its lifetime or requiring excessive drive current. The VCSEL portion of the VCSEL module is tuned to operate efficiently at a higher than normal temperature. In addition to the VCSEL, the VCSEL module includes a heater and a temperature sensor that are used to maintain a particular minimum temperature that is within the efficient operation range of the VCSEL. By maintaining a temperature that is within the efficient operation range, the VCSEL module reduces the current required to operate the VCSEL and extends the overall lifetime of the VCSEL. The additional components of the VCSEL module do not interfere in any way with the signal quality produced by the VCSEL.

Abstract: A solid state laser medium comprising at least one cooling element, i.e. cooling element, in contact with and alternating in series with at least one gain element. At least one cooling element and at least one gain element are joined at an interface having a center point, wherein the interface is physically modified at the interface such that the heat transfer coefficient at the interface decreases radially from the center point of the interface. The modified interface promotes thermal transfer from the gain element in the axial direction, in such a manner as to reduce thermal distortion affecting optical properties of the laser. Concentric radially disposed barriers to heat flow that hinder heat flow in the radial direction may be added within the gain element to further reduce thermal distortion within the laser medium.

Abstract: In a semiconductor lasers using quantum well gain medium, a quantum well stack is mounted in an epi-down configuration. The epitaxial side of the device may be directly bonded to an efficient heat transport system so that heat may more easily leave the quantum well stack layers and be disposed at a heatsink. Such a device runs cooler and exhibits reduced loss mechanisms as represented by a laser system loss-line. External cavity systems using this configuration may permit a high degree of tunability, and these systems are particularly improved as the tuning range is extended by lowered cavity losses.

Abstract: A laser diode array assembly. The assembly includes a plurality of vertical emitting laser diodes. Each laser diode has a vertical emitting surface and an exposed substrate surface opposite from the emitting surface. Each vertical emitting surfaces emit a laser beam. The assembly further includes one or more nozzles that directly spray a liquid onto the exposed substrate surfaces.

Abstract: In an optical modulation device (10) having an electrical/optical interaction region (11), an electrical signal line (3) is connected to an electrical signal input terminal (2a), another electrical signal line (4a) is connected to an electrical signal output terminal (2b), and a reflection control circuit (5) is connected to the other electrical signal line (4a). This reflection control circuit (5) is an impedance element which positively reflects an output electrical signal from the interaction region (11) of the optical modulation device (10). This makes it possible to raise the upper-limiting frequency at which the E/O (Electrical-to-Optical) response characteristic can be improved, and improve the flatness of the frequency characteristic of the E/O response without deteriorating the absolute value of the E/O response.

Abstract: There is provided a semiconductor laser device which has a semiconductor laser element of a large cavity length and in which an outside shape and outside dimensions of a package are generally identical to those of the conventional one. A mounting portion 10 of a first lead 2 for the semiconductor laser element 1 has a portion that overlaps a second leads 3 in a direction perpendicular to an optical axis direction of laser light emitted from the semiconductor laser element 1, and the first lead 2 and the second leads 3 are integrally retained by a resin member 5 so that the first lead 2 and the second leads 3 are not electrically connected to each other.

Abstract: A system includes a laser-diode bar comprising an emitting surface and a reflective surface opposing the emitting surface. The laser-diode bar includes a positive-side surface and a negative-side surface opposing the positive-side surface for conducting electrical energy through laser-diode bar. The system also includes a heat sink thermally coupled to the laser-diode bar. The heat sink is made of a material selected from the group consisting of Skeleton-cemented diamond and diamond-copper composite. The system also includes a heat spreader interposed between the heat sink and the laser-diode bar. The heat spreader includes a first surface thermally interfacing the positive-side surface of the laser-diode bar. The first surface is substantially smoother than a surface on the heat sink and includes an electrically conductive material for conducting the electrical energy into the laser-diode bar.

Abstract: The present invention relates to a semiconductor laser apparatus having a structure for preventing the corrosion of a refrigerant flow path in a heat sink and for cooling a semiconductor laser array stably over a long period of time. The semiconductor laser apparatus comprises a semiconductor laser stack in which a plurality of semiconductor laser units are stacked, a refrigerant supplier, a piping for connecting these components, and a refrigerant flowing through these components. The refrigerant supplier supplies the refrigerant to the semiconductor laser stack. The refrigerant is comprised of fluorocarbon. Each of the semiconductor laser units is constituted by a pair of a semiconductor laser array and a heat sink. The heat sink has a refrigerant flow path.

Abstract: A laser diode array is formed on a heat sink having an insulating layer in which a plurality of grooves is formed through the ceramic layer and to or into the heat sink. A laser diode stack is soldered to the ceramic layer.

Abstract: A laser diode package (10) according to the present invention is tolerant of short-circuit and open-circuit failures. The laser diode package (10) includes a laser diode bar (12), a forward-biased diode (14), a heat sink (18), and a lid (16) which may have fusible links (86). The laser diode bar (12) and the forward-biased diode (14) are electrically connected in parallel between the heat sink (18) and the lid (16). The emitting region of the laser diode bar (12) is aligned to emit radiation away from the forward-biased diode (14). Several packages can be stacked together to form a laser diode array (42). The forward-biased diode (14) allows current to pass through it when an open-circuit failure has occurred in the corresponding laser diode bar (12), thus preventing an open-circuit failure from completely disabling the array (42).

Abstract: A laser diode package includes a laser diode, a cooler, and a metallization layer. The laser diode is used for converting electrical energy to optical energy. The cooler receives and routes a coolant from a cooling source via internal channels. The cooler includes a plurality of ceramic sheets and a highly thermally-conductive sheet. The ceramic sheets are fused together and the thermally-conductive sheet is attached to a top ceramic sheet of the plurality of ceramic sheets. The metallization layer has at least a portion on the thermally-conductive sheet. The portion is electrically coupled to the laser diode for conducting the electrical energy to the laser diode.

Abstract: An improved Vertical External Cavity Surface Emitting Laser (VECSEL) (1, 22, 27, 29) is described that exhibits improved frequency stability and tuning characteristics when compared with known devices. This is achieved through the employment of an intra cavity heatspreader (18) comprising single crystal diamond that is located with the gain medium (14) of the VECSEL (1, 22, 27, 29). As single crystal diamond exhibits good thermal conductivity and is non birefringent it acts as a good heatspreader (18) for the gain medium (14) while not interfering with the polarisation selection properties of any intra cavity birefringent filter (9). A further advantage of the heat spreader (18) being non birefringent is that an optimised anti reflection coating can also be applied this component.

Abstract: A laser module comprising a laser device attached to a heat sink that is configured to provide a relatively low thermal resistance for thermal management of the laser device, and a coefficient of thermal expansion (CTE) that is substantially matched to the CTE of the laser device for reducing stress caused by thermal cycles and bonding. In one embodiment, the heat sink comprises a substrate made out of a first material, and including one or more via holes filled with a second material distinct from the first material of the substrate. By properly selecting the first and second materials, configuring the overall mass of the substrate with respect to the overall mass of the filled via holes, and positioning and arranging the filled via holes with respect to the laser device, the desired effective thermal resistance and CTE for the heat sink may be achieved. In another embodiment, the laser module comprises a laser device attached to a submount, which is, in turn, attached to a heat sink.

Abstract: The invention discloses a light-emitting diode illuminating equipment. The light-emitting diode illuminating equipment of the invention includes a heat-dissipating plate device, a plurality of heat-dissipating fins, a plurality of diode light-emitting devices, and a plurality of bar-shaped heat-conducting devices with high heat-conducting coefficient. The heat-dissipating fins extend from a surface of the heat-dissipating plate device. By mounting the heat-conducting devices onto the surface of the heat-dissipating plate device and disposing them among the heat-dissipating fins, a heat produced in operation by each diode light-emitting device is distributed uniformly on the heat-dissipating plate device and the heat-conducting devices due to the high heat-conducting efficiency of the heat-conducting devices, and then it is dissipated such that the diode light-emitting devices have a consistent junction temperature to make a consistency of luminous efficiency and lifetime of the diode light-emitting devices.

Abstract: A laser module comprising a laser device attached to a heat sink that is configured to provide a relatively low thermal resistance for thermal management of the laser device, and a coefficient of thermal expansion (CTE) that is substantially matched to the CTE of the laser device for reducing stress caused by thermal cycles. The heat sink includes a shell made out of a first material, and an insert situated within the shell and made out of a second material distinct from the first material of the shell. By properly selecting the first and second materials, configuring the overall mass of the shell with respect to the overall mass of the insert, and positioning, arranging, and/or orienting the insert with respect to the laser device, the desired effective thermal resistance and CTE for the heat sink may be achieved. In one embodiment, the shell includes a material, such as copper, or a metal matrix composite such as copper graphite.

Abstract: Aspects of the present invention are directed to the use of optical gain structures that include alternating layers of gain medium and transparent heat conductors in which the gain medium itself functions as a correction optic. The gain medium changes to an optimum or desired shape because of the thermal changes occurring as the materials of the optical gain structure(s) reach a desired optical output condition. At the desired optical output conditions, the gain medium conforms to a desired shape. The desired shape may be, for example, that of an optical surface of a transparent heat conductor. By designing the initial shape of the gain medium such that the physical contact with the transparent heat conductor is maximized at the desired optical output conditions, conductive heat transfer between the gain medium and heat conductor(s) is maximized at the desired optical output condition.

Abstract: A cooling system for use in with a transmissive optical element of a high average power laser (HAP). The system includes at least one optically transmissive element (TOC) that is held by a differential pressure in thermal contact with a heat sink assembly. In one embodiment, the heat sink assembly includes an optically transparent heat conductor (THC) attached to at least one face of the TOC. A vacuum formed between adjacent faces of the TOC and THC urges the facing planar surfaces into thermal contact with one another. Waste heat generated in the TOC is conducted to the THC. The temperature gradient inside the TOC is maintained substantially parallel to the direction of a laser beam being directed through the THC so that a given phase front of the beam exposes TOC material to the same temperature. As a result, the TOC does not perturb the phase front of the laser beam.

Abstract: In a semiconductor laser apparatus, semiconductor laser devices are mounted on a loading face of a radiation base portion produced from a radiation material in a mount board, and the radiation base portion and a cap portion constitute an envelope surrounding the semiconductor laser devices. Further, the radiation base portion and interconnections formed on and an extending face of the radiation base portion constitute an external connection terminal. Therefore, heat generated by the semiconductor laser devices is efficiently transferred to the radiation base portion produced from a radiation material. Further, constituting the external connection terminal allows a leadless configuration to be implemented. Thus, a semiconductor laser apparatus which is sufficient in radiation characteristics and is capable of supporting a low-profile specification is provided.

Abstract: A system and method for controlling the temperature of a heat-generating component such as a laser. A microelectromechanical system for controlling the temperature of the heat-generating component includes a magnetic heat sink device, a temperature sensor, and control circuitry. The temperature sensor detects the temperature of the heat-generating component through the heat sink and feeds the sensed temperature to the control circuitry. The detected temperature is compared to a predetermined temperature set point. When the detected temperature is higher than the temperature set point, a command is sent to the magnetic heat sink to take more heat out of the heat-generating component. When the detected temperature is lower than the temperature set point, a command is sent to the magnetic heat sink to take less heat out of the heat-generating component.

Abstract: A semiconductor optical package for optical communication includes a cooling plate dissipating internal heat generated from the semiconductor optical package and having one or more grooves passing through top and bottom surfaces thereof. There is a housing having one or more slots formed on its bottom face, the housing at least partly enclosing an optical transmission module resting on the cooling plate such that the respective slots thereof correspond to the respective grooves of the cooling plate. There are also one or more screws passing through the grooves and inserted into the slots for coupling the housing to the optical transmission module.

Abstract: Cooling devices are disclosed for use with mirrors and other optical elements subject to heating during use, especially as used in lithographic exposure apparatus. The cooling devices pose minimal risk of damage caused by coolant leaks, provide simplified maintenance, and reduce vibrations while providing good cooling performance. An exemplary cooling device includes a cooling element (e.g., Peltier element) proximal to the optical element and a heat-conduction member mounted on the heat-dissipating side of the cooling element. The heat-conduction member extends, within the exposure apparatus, away from the optical element, and the extended portion of the heat-conduction member is cooled.

Abstract: A semiconductor light emitting device includes a light emitting element, a heat radiating member, and a submount interposed between the light emitting element and the heat radiating member. The light emitting element is fixed to heat radiating member by a brazing material with the submount interposed. The heat radiating member has a groove on its surface to which the submount is fixed. With this configuration, a semiconductor light emitting device that is applicable to a large-sized light emitting element that is excellent in heat radiation and that has high reliability can be provided.

Abstract: The semiconductor laser unit includes: a metal plate having a center portion wider than the remaining portions; a flexible substrate having a first opening; a substrate mounted on the center portion; a semiconductor laser placed on the substrate; a frame having a second opening and fixing the flexible substrate in the state of being bent along from the top surface to both side faces of the metal plate; and an optical element covering the second opening. The flexible substrate is fixed so that the first opening extends over the top surface and both side faces of the center portion.

Abstract: A semiconductor laser beam device, comprising a stem type package having a base part and a heat sink part, wherein the heat sink part is cylindrically formed so as to be concentric to the base part, a groove is formed along the axial direction of the heat sink part, and a semiconductor laser beam element is disposed at the bottom part of the inner wall surfaces of the groove whereby the radiating capability of the semiconductor laser beam device can be increased by increasing the volume of the heat sink part, and the element can be protected by the groove.

Abstract: An optical semiconductor device has a semiconductor substrate, an optical semiconductor region and a heater. The optical semiconductor region is provided on the semiconductor substrate and has a width smaller than that of the semiconductor substrate. The heater is provided on the optical semiconductor region. The optical semiconductor region has a cladding region, an optical waveguide layer and a low thermal conductivity layer. The optical waveguide layer is provided in the cladding region and has a refractive index higher than that of the cladding region. The low thermal conductivity layer is provided between the optical waveguide layer and the semiconductor substrate and has a thermal conductivity lower than that of the cladding region.

Abstract: A green optical module is disclosed. The module includes a harmonic generator for generating a second harmonic, a laser light source for generating light for pumping the harmonic generator and at least two heat sinks spaced from each other. The harmonic generator and the laser light source are disposed on upper surfaces of the heat sinks, respectively.

Abstract: An optical semiconductor device includes a wavelength-tunable semiconductor laser chip, a mount carrier, a first temperature sensor and a wire. The wavelength-tunable semiconductor laser chip has a first optical waveguide and a second optical waveguide. The second optical waveguide has a heater on a surface thereof and is optically coupled to the first optical waveguide. The mount carrier is for mounting the wavelength-tunable semiconductor laser chip, and has a first area arranged at a surface of the mount carrier of the first optical waveguide side when the wavelength-tunable semiconductor laser chip is mounted. The first temperature sensor is mounted on the first area. The wire couples between the heater and a second area arranged at a surface of the mount carrier of the second optical waveguide side when the wavelength-tunable semiconductor laser chip is mounted.

Abstract: Optical head 1 has heat sink 6. This heat sink 6 has front overhang section 16 (contact part), the 2nd front drooping sections 17a (contact part) and 17b (contact part), the 1st side drooping section 18, side overhang section 19 (contact part), and the 2nd side drooping sections 20a (contact part) and 20b (contact part) which carry out field contact in laser diodes 4 and 5 and laser holders 12 and 13. Also this heat sink 6 has body part 14 which intervenes between an optical disc and housing 3.

Abstract: An apparatus for stacking photonic devices is disclosed. The apparatus can include a base, first and second spaced apart rail portions disposed on the base, and a vacuum guide disposed on the base between the rail portions for forming a vacuum gradient that pulls a plurality of photonic devices and spacer bars together into a stack. Optionally, spaced apart photonic device supports can be placed on the base between the rail portions to lift the photonic devices off of the surface of the base. The apparatus can also include a clamping system to hold the stack in place so that a vapor deposition process can be used to apply coatings to the photonic devices. In one exemplary embodiment, the photonic devices can be laser bars.

Abstract: The present invention provides an optical module able to reduce the power consumption thereof. The optical module, the package of which has a type of CAN or a co-axial shape, includes a Peltier device, a block, a laser diode (LD) and a photodiode. The block, mounting the LD on the side surface thereof, has a surface for reflecting the light emitted from the light-reflecting facet of the LD, and is mounted on the Peltier device. The photodiode, installed outside the Peltier device, receives the light emitted from the LD and reflected by the surface of the block. Since the photodiode is mounted outside the Peltier device, the cooling efficiency of the Peltier device may be enhanced, which saves the power consumption of the optical module.