Abstract: The present invention provides an optical module able to reduce the power consumption thereof. The optical module, the package of which has a type of CAN or a co-axial shape, includes a Peltier device, a block, a laser diode (LD) and a photodiode. The block, mounting the LD on the side surface thereof, has a surface for reflecting the light emitted from the light-reflecting facet of the LD, and is mounted on the Peltier device. The photodiode, installed outside the Peltier device, receives the light emitted from the LD and reflected by the surface of the block. Since the photodiode is mounted outside the Peltier device, the cooling efficiency of the Peltier device may be enhanced, which saves the power consumption of the optical module.

Abstract: A laser transmitter within an optical transceiver includes a heating element. The heating element is coup led to the laser package and is controlled to allow the laser to be heated to a higher temperature than the ambient temperature when low environmental temperature extremes occur. The transmitter includes a semiconductor laser having an optimal operational temperature range, a laser driver circuit coupled to the laser that provides a modulation current and a bias current to drive the laser, a heating element thermally coupled to the laser and a heating control circuit that monitors the bias current applied to the laser for drops in bias current that are indicative of drops in the surrounding ambient temperature. In response to a drop in bias current, the control circuitry energizes the heating element to provide heat to the laser.

Abstract: The semiconductor optical device is mounted junction down on a mounting plate via the solder metal of the mounting plate. The electrode of the semiconductor optical device facing the mounting plate is partially coated with a dielectric film and the dielectric film is in contact with the solder metal on the mounting plate. The reaction between the semiconductor optical device and the solder metal of the mounting plate can be suppressed without deteriorating the thermal conductivity between the semiconductor optical device and the mounting plate. Therefore, it is possible to improve the reliability of the semiconductor optical device mounted in the junction down form since diffusion of the solder metal into the semiconductor can be prevented.

Abstract: The present invention relates generally to optoelectronic devices, and particularly to a submount, pedestal, and bond wire assembly for a transistor outline package. A bottom surface of the submount is connected to a top surface of the pedestal. Each bond wire in a bond wire set is connected to a position on the top surface of the submount, and to a position on the signal line. The signal line is positioned a first distance from the position on the top surface of the submount and a second distance from the pedestal. The submount is sized such that a portion of the bottom and the top surface of the submount extends beyond the top surface of the pedestal such that the first distance is less than the second distance.

Abstract: A semiconductor optical radiation package includes a leadframe, at least one semiconductor optical radiation emitter, and an encapsulant. The leadframe has a heat extraction member, which supports the semiconductor optical emitter and provides one or more thermal paths for removing heat generated within the emitter to the ambient environment, as well as at least two electrical leads for providing electrical coupling to the semiconductor optical radiation emitter. The encapsulant covers and protects the emitter and optional wire bonds from damage and allows radiation to be emitted from the emitter into the ambient environment. The semiconductor optical radiation package provides high emitted flux and is preferably compatible with automated processing techniques.

Abstract: An apparatus is described in which the temperature of a semiconductor laser (or other device) can be set to a desired value by using the heat generated by the laser itself in conjunction with an adjustable thermal impedance heat sink to effect the desired temperature rise.

Abstract: Provided is a VECSEL capable of achieving an excellent efficiency of a SHG crystal and being manufactured in a compact size. The VECSEL includes a laser chip, an external mirror, an SHG crystal, a lens element, and a wavelength selective mirror. The laser chip generates a first wavelength light, and the external mirror is spaced from the laser chip to face the front side of the laser chip. The SHG crystal is located between the external mirror and the laser chip to double the frequency of the first wavelength light to make a second wavelength light. The lens element is located between the SHG crystal and the laser chip to allow the first wavelength light generated from the laser chip to converge at the SHG crystal, and the wavelength selective mirror is located between the SHG crystal and the lens element to transmit the first wavelength light and reflect the second wavelength light to the external mirror.

Abstract: The VECSEL includes: a heat spreader dissipating generated heat; a laser chip that is disposed on the heat spreader and is excited by a pump beam of a predetermined wavelength to emit a beam of a first wavelength; a Second Harmonic Generation (SHG) crystal that is disposed on the laser chip or the heat spreader and converts the laser beam of the first wavelength emitted from the laser chip into a beam having a second wavelength that is one-half the first wavelength; and a planar external cavity mirror that is directly formed on the SHG crystal and has a predetermined transmittance with respect to the beam of the second wavelength.

Abstract: A compact high power laser dazzling device includes at least one heat sink, multiple laser resonators and an optical head. Each of the laser resonators extends axially from a first end, fixedly mounted to the heat sink, to a second end emitting an individual laser beam. The optical head is disposed adjacent to the second ends of the laser resonators and includes an optical transmission assembly that directs the individual laser beams of the laser resonators to define a region of overlap at a remote point a predetermined distance from the optical head. A laser beam intensity adjuster assembly may be disposed adjacent the output end of the optical head. The laser beam intensity adjuster assembly includes a front face having multiple apertures. At least one of the apertures has a holographic diffuser element mounted therein and at least one of the apertures has an optically clear window element or no optical elements mounted therein.

Abstract: A light emitting apparatus which has reduced power consumption is provided. The light emitting apparatus includes a light emitting device and a thermoelectric cooler which cools the light emitting device. The light emitting device and the thermoelectric cooler are driven by a single voltage source. The light emitting apparatus operates the thermoelectric cooler using a current which is normally consumed as heat energy by a bias resistor in a circuit. Accordingly, the circuit is simplified and power consumption is reduced.

Abstract: Provided is a vertical cavity external surface emitting laser (VECSEL) apparatus in which incidence loss of a pumping beam can be reduced. The VECSEL apparatus includes: a laser chip including: an anti-reflection coating (ARC) layer to which a pumping beam is incident; a low Herpin Index distributed Bragg reflector (LHI-DBR) having a LHI stack structure; and a periodic gain layer that is formed on the LHI-DBR and generates laser light by being excited by the pumping beam; and an external cavity mirror that is installed outside the laser chip and faces the periodic gain layer and constitutes a laser cavity with the LHI-DBR.

Abstract: Method and apparatuses for compensating for wavelength drift in a fiber-optic laser transmitter includes 1) controlling a temperature within the optoelectronic assembly at a defined level; 2) driving the optoelectronic assembly to emit light, wherein the emitted light has a wavelength that is within a channel of operation, the channel of operation including a range of wavelengths centered around a channel center wavelength; 3) accessing from memory within the optoelectronic assembly a control value associated with the temperature of the optoelectronic assembly at defined points within an operational lifetime of the optoelectronic assembly; and 4) recalculating the defined level by reference to the control value, whereby a wavelength of the optoelectronic assembly is maintained within the channel of operation despite an expected drift of wavelength.

Abstract: There is provided a semiconductor laser device which allows a stem body and a heat radiation block to be integrally fabricated even in small-size packages and which is low in price. Portions of leads 3A, 3B protruding on a reference surface side are placed on one side surface side of the heat radiation block 2 on which the semiconductor laser chip is mounted. Further, a cover 6 made of resin which is opened on the beam-output side of the semiconductor laser chip 4 is fixed to the heat radiation block 2 so as to surround the semiconductor laser chip 4 and the portions of the leads 3A, 3B protruding on the reference-surface side in conjunction with the heat radiation block 2.

Abstract: A laser module having a laser optically coupled with an optical fiber via a collimating lens and a focusing lens is formed. The laser is mounted in a laser housing so that its laser light output is directed toward a laser housing wall opening in a laser housing wall of the laser housing. A lens-fiber housing having a lens installed in a first end thereof and a light-receiving input end of the fiber disposed in a bore at a second end thereof is provided. The lens and input end of the fiber form a collimator. The lens-fiber housing is mounted from the outside of the laser housing to the laser housing wall to receive collimated light transmitted from inside the laser housing through the laser housing wall opening. The collimating lens is actively aligned in the laser housing, between the laser and the laser housing wall opening, to determine an aligned position. The collimating lens is secured in the laser housing at the aligned position.

Abstract: An optically pumped semiconductor laser apparatus having a vertical emitter (2) and having one pump laser (5) for optically pumping the vertical emitter (2), with the vertical emitter (2) and the pump laser (5) being monolithically integrated. The pump laser (5) and the vertical emitter (2) each have a radiation-emitting zone (3, 6). During operation, the temperature of the radiation-emitting zone (6) of the pump laser (5) is lower than the temperature of the radiation-emitting zone (3) of the vertical emitter (2).

Abstract: A solder-free laser module which comprises at least one laser chip clamp-mounting between electrodes. The laser module includes: some electrodes facing each other and having opposite poles; insulating separators placed between the facing surfaces of the electrodes to prevent direct contact between them and their short-circuiting; laser chips mounted between the facing surfaces of said electrodes, making contact with the electrodes, and clamping means for bringing the electrodes facing each other more closely together to ensure their contact with the laser chips positioned between them, thereby ensuring electrical power supply to the aforesaid laser chips and dissipation of the heat generated. The invention further relates to a method for assembling the aforesaid laser module.

Abstract: An integrated optical device allowing for higher flexibility in designing its outer shape and securing hermetic sealing is provided, which includes a ceramic substrate mounting a light source, a covering member fixed to the substrate for covering the light source, and a resin mold package for attaching the substrate, wherein a metal joint portion on the substrate and a metal joint portion on the covering member are joined, as well as a through-hole in the substrate or in covering member is sealed with a transparent material for hermetic sealing of the light source.

Abstract: A laser beam source has a laser element provided with a thin crystal disk as a laser active medium. The laser beam source has improved mechanical stability and improved thermal contact with respect to a cooling element on the flat side of the crystal disk that is disposed opposite the cooling element. A cooling disk is disposed between the crystal disk and the cooling element.

Abstract: A laser package includes a submount, a laser die mounted on the submount, a lid mounted on the submount over the laser die, and a soft metal disposed between the laser die and the lid, wherein the soft metal conducts heat between the laser die and the lid. The soft metal is able to creep or cold flow under pressure to accommodate for varying manufacturing tolerances and varying thermal expansion rates of the elements in the laser package.

Abstract: A laser diode device of package not greater than 5.6 mm, having an automatic power control circuit directly mounted in a heat sink (or a submount) inside the metal cap thereof to substitute for an external circuit board for driving by voltage instead of current.

Abstract: A laser diode module with a built-in high-frequency modulation IC used to remove the reflected noise generated as the laser beam reads the signal to be played back and directly packaged within a metal cap. The high-frequency modulation IC creates an electrical connection through wire bonding with several connection legs and the laser diode module. The packaged laser diode module has four connection legs. Two of these connection legs act as a positive and a negative terminal for supplying power to the built-in high-frequency modulation IC. The other two connection legs are electrically connected to an external automatic power control (APC) circuit and act as the positive terminal of the laser diode and the photo diode, respectively. In this way, the inconvenience of externally attaching a high-frequency current producing circuit board can be avoided, the productivity can be enhanced and the radiation of electromagnetic interference (EMI) can be reduced.

Abstract: A semiconductor laser device includes a package having a front surface, a rear surface and an outer peripheral surface; a semiconductor laser element and a light receiving element provided on the front surface; a plurality of leads arranged in spaced relation on the front surface as extending outward from the package; and an optical element supported above the front surface with its optical axis perpendicular to the front surface for guiding a laser beam emitted from the semiconductor laser element toward an object and guiding light reflected on the object to the light receiving element; wherein the outer peripheral surface is configured so as to be fitted in a cylindrical hole having an axis parallel to the optical axis of the optical element, and has a recess extending from the front surface to the rear surface, and the leads are bent as extending from the front surface and passing through the recess with distal portions thereof extending along the optical axis of the optical element and with proximal ends

Abstract: External cavity optical transmitters are disclosed which include a gain chip and a mirror that define an optical cavity. The transmitters further include a modulator operated at or near the same temperature as the gain chip. In some examples, the optical transmitters are temperature controlled to optimize the efficiency and wavelength stability thereof, while maintaining acceptable chirp performance of the modulator. In some examples, the optical transmitters include an electro-optic module disposed within the optical cavity to change the path length thereof so that the efficiency and wavelength stability of the transmitter is optimized.

Abstract: A semiconductor laser device aimed to be reduced in size and that can maintain high position accuracy, and a fabrication method of such a semiconductor laser device are achieved. A semiconductor laser device includes a stem as a base member, and a cap member. The stem includes a main unit having a reference plane, and a heat sink platform as an element mount unit, located on the reference plane for mounting a laser element. The cap member is set on the reference plane of the stem so as to cover the heat sink platform. A hole is formed at the sidewall of the cap member facing the heat sink platform. Fixation between the cap member and the stem is established by fixedly attaching the portion at the inner side of the sidewall of the cap member adjacent the hole to the outer circumferential plane of a heat sink platform.

Abstract: An optical element module package with a TO-can structure is disclosed. The module includes a laser diode for projecting optical signals and a photo diode for monitoring the optical signals projected from the laser diode. The package includes a stem having a first through-hole formed in a long-hole shape parallel to the diametrical direction of the stem, the first through-hole extending through the stem from one side to the other; and a plurality of leads arranged in a row through the first through-hole. The first through-hole is filled with a sealant of a glass material so that the stem and the leads are fixed.

Abstract: An optical subassembly includes a substrate, a heat spreader, and a submount. The submount has a submount mounting surface and a component mounting surface with either the submount mounting surface or the component mounting surface including an angle. The submount is positioned on either the heat spreader or the substrate such that the component mounting surface is positioned at the angle relative to the substrate. An optoelectric device is positioned on the component mounting surface and coupled to interconnects on the substrate. The optoelectric device is thermally coupled to the heat spreader through the submount to provide a low thermal resistance between the optoelectric device and the heat spreader. An encapsulant structure is mounted on the substrate and hermetically encloses the optoelectric device. The encapsulant structure includes a window positioned to pass light between the optoelectric device and an externally mounted optical fiber.

Abstract: A heated laser assembly for maintaining a set point temperature of a laser. A common transistor external to the laser is positioned in thermal proximity to the laser. A thermal transfer member is positioned in thermal contact between the laser and the transistor. The transistor heats the thermal transfer member, and thus heats the laser, when the ambient temperature drops below a set point temperature. Therefore, the overall temperature range the laser must operate over is reduce through the use of a common transistor.

Abstract: Submount substrates are connected to both sides of a laser diode via hard solders. The lower submount substrate and a heat sink are connected together by a soft solder. The heat sink and a presser electrode are fixed with a predetermined gap therebetween via an insulating spacer. A coil electrode is fitted in a V-shaped groove of the presser electrode. As the coil electrode is deformed slightly elastically, the coil electrode is pressed against the upper submount substrate.

Abstract: The laser diode arrays with removable linear laser diode bars and the methods of removing and replacing linear laser diode bars of the present invention provide easy and immediate removal of individual linear laser diode bars in laser diode arrays. The laser diode array is at least partially made of a plurality of removable linear laser diode bars and a plurality of spacers, such that each removable linear laser diode bar is disposed between a respective pair of spacers. A linear laser diode bar may be slideably removed from between the respective pair of spacers in the laser diode array without breaking any mechanical connection between the removable linear laser diode bar and the respective pair of spacers. A replacement linear laser diode bar may then be slideably inserted between the respective pair of spacers without forming a mechanical connection between the replacement linear laser diode bar and the spacers.

Abstract: A semiconductor laser chip unit includes an electrode pattern and a ground electrode; a semiconductor laser chip which is die-bonded to the ground electrode and outputs a laser beam according to a high-frequency signal transmitted from the electrode pattern and the ground electrode, and a collimator lens for collimating the laser beam from the semiconductor laser chip. The semiconductor laser chip and the collimator lens are so positioned that the laser beam output from the semiconductor laser chip is made incident on a surface of the collimator lens at a position inside of the focal point of the collimator lens, and the unit is integrated in a non-conductive heat sink so as to form a unit.

Abstract: In a method for producing a laser element, a brazing material is placed between a nitride-based semiconductor laser bar and a fixation surface of a heat sink, where the brazing material contains gold and one of tin and silicon as main components, the nitride-based semiconductor laser bar has at least three light-emission points formed on a substrate, the heat sink is made of copper or copper alloy, and the fixation surface has a predetermined shape. Then, the nitride-based semiconductor laser bar is fixed to the fixation surface of the heat sink by melting and solidifying the brazing material while pressing the nitride-based semiconductor laser bar toward the heat sink with a tool having a shape corresponding to the predetermined shape of the fixation surface.

Abstract: A chip carrier having improver thermal properties, wherein the chip carrier may be formed having waist section, and a first transverse end portion joined to the waist section. A first surface of the carrier being configured to receive a chip thereon, and a second surface of the carrier configured to be coupled to a thermal control unit to provide cooling of the carrier and chip. The chip carrier may have a second transverse end portion joined to the waist portion in certain embodiments.

Abstract: An optical element holder for holding an optical element includes a holding element to hold the optical element or a holding part provided to the optical element unitedly, wherein there is substantially no heat exchange between the optical element and the holding element or the holding part and the holding element.

Abstract: The present invention provides a system, method and apparatus for improved electrical-to-optical transmitters (100) disposed within printed circuit boards (104). The heat sink (110, 200) is a thermal conductive material disposed within a cavity (102) of the printed circuit board (104) and is thermally coupled to a bottom surface (112) of the electrical-to-optical transmitter (100). A portion of the thermal conductive material extends approximately to an outer surface (120, 122 or 124) of a layer (114, 116 or 118) of the printed circuit board (104). The printed circuit board may comprise a planarized signal communications system or an optoelectronic signal communications system. In addition, the present invention provides a method for fabricating the heat sink wherein the electrical-to-optical transmitter disposed within a cavity of the printed circuit board is fabricated. New methods for flexible waveguides and micro-mirror couplers are also provided.

Abstract: An optical transmission system includes an optical wavelength branching unit that shifts a wavelength transmission band in the short-wavelength or long-wavelength directions based on a branching filter operation temperature, and performs a branching operation on a wavelength-multiplexed signal. A reception transponder performs decoding on an error correction code. An error correction monitoring unit gathers an error correction amount upon which a branching filter temperature control unit sets the branching filter operation temperature. A transmission transponder performs encoding on an error correction code. An optical wavelength combining unit shifts the wavelength transmission band in the opposite direction from the shifting direction based on a combining filter operation temperature, to perform a combining operation on optical signals and output a wavelength-multiplexed optical signal.

Abstract: A first semiconductor laser element and a second semiconductor laser element are arranged on an identical block, a first electrode of the first semiconductor laser element is in direct contact with the block, and heat radiating effect is high. A second electrode of the second semiconductor laser element is arranged on an insulating dielectric layer, and the block and second semiconductor laser element are electrically insulated. Therefore, irrespective of the material to compose the block, the first semiconductor laser element and the second semiconductor laser element can be independently driven. In addition, the light emitting point distance between the first semiconductor laser element and second semiconductor laser element is limited only by the distance between the electrodes of the respective semiconductor lasers and the positions of light emitting points on the semiconductor laser chip end face and can, therefore, be made as short as possible.

Abstract: In a conventional optical device which mounts a semiconductor light emitting element, the processing is difficult and a manufacturing process cost is expensive because of the necessity of forming via holes in a substrate. An optical device comprises a laser diode which needs heat radiation, a glass substrate which is integrally molded into a mold glass for arranging the laser diode, a metallic heat sink arranged at an edge of the glass substrate for radiating heat generated from the laser diode, wherein an active layer proximity surface of the laser diode is arranged to oppose the heat sink, both of them are connected with a conductive paste through a lateral groove formed in the glass substrate.

Abstract: This invention provides an optical transmitter in which reduced power consumption is achieved by, when a signal generator needs data transmission, driving a laser emitting device to perform emission. An optical transmitter includes a receiver, a laser driving circuit, a light emitting unit constituted by a plurality of laser emitting devices, and an EDID memory. The receiver and the laser driving circuit are supplied with power from a dedicated external power supply through a power-supply line, and the power-supply line is provided with a switch. The contact of the switch is controlled to open and close based on a power-supply voltage supplied from the DDC controller to the EDID memory.

Abstract: The present invention provides a semiconductor laser device of which reliability is enhanced. In the semiconductor laser device of the present invention, a semiconductor laser element 3 emitting laser light in a plane direction, a reflection mirror 4 reflecting the laser light in an upper direction and a light acceptance unit 5 detecting signal of incident laser light are disposed inside an insulative frame 2. A plurality of leads 8 extending in a horizontal direction are fixed in the end walls 2a, 2b opposed to each other in the longitudinal direction of the insulative frame 2. The insulative frame 2 is made of liquid crystal polymer.

Abstract: An optoelectronic package (10) includes a base substrate (40), a plurality of solder pads (21) and a can (30). The base substrate includes a mounting seat (41) laminated first and second layer (421,422). The solder pads (21) respectively attach to a top surface (412) and a bottom surface (4212) of the base substrate and are electrically interconnected with each other via conductive material filled the through-holes (411,4223,4213) and conductor trace (45,45?). Optoelectronic components (not shown) are attached to the top surface of the base substrate and make electrical connection with the solder pads. The can includes a transparent device (31), an metal enclosure (32) and a housing (33), which hermetically seals to the base substrate protecting the optoelectronic components.

Abstract: A light-emitting module according to the present invention contains a Peltier element driver, and a signal processor for controlling the Peltier element driver. The Peltier element driver is mounted on a first substrate, which directly attaches to the inner bottom surface of the housing, while the signal processor is mounted on the other substrate spaced to the first substrate. The first substrate and the other substrate are vertically integrated within the housing. This arrangement enables to encase the Peltier element driver and the signal processor in the housing with effective thermal dissipation.

Abstract: A high-speed optical transmitter having an optical modulator and a driver circuit while maintaining optical modulator performance. The high-speed optical transmitter comprises the optical modulator which modulates and outputs an input light in accordance with an applied voltage, and a driver circuit which outputs the applied voltage into the optical modulator and has an emitter follower circuit at an output stage thereof.

Abstract: Provided is a submount flip-chip bonded to a semiconductor laser diode chip with stepped first and second electrodes. The submount includes a substrate having first and second surfaces which are separated by a step height corresponding to a height difference between the first and second electrodes; first and second metal layers being formed to the same thickness on the first and second surfaces, respectively; and first and second solder layers being formed to the same thickness on the first and second metal layers, respectively, and being bonded to the first and second electrodes, respectively.

Abstract: This disclosure concerns optical packages such as may be used in optical transceivers and transmitters. In one example, an optical package includes a header assembly having a base portion to which is attached a header structure that is split into first and second portions that are separated from each other by a space. The header structure further includes one or more electrical leads extending through the base portion and into one of the first and second portions of the header structure. An active temperature control device is included in the optical package and resides in the space between the first and second portions of the header structure. Finally, an optical element, such as a laser, is provided that is arranged for thermal communication with the active temperature control device so that operation of the optical element can be controlled by way of the active temperature control device.

Abstract: Provided is a fiber grating laser for optical communication which can be used as a light source regardless of the occurrence of mode hopping. The laser module comprises a semiconductor optical amplifier device, an optical waveguide such as an optical fiber, and a diffraction grating such as a fiber grating. The semiconductor optical amplifier device has first and second end surfaces. The optical waveguide is optically coupled to the semiconductor optical amplifier device. The diffraction grating is optically coupled to the optical waveguide. The semiconductor optical amplifier device and the diffraction grating constitute an external cavity. An optical cavity length of the external cavity is in a range of 13 millimeters or more but 27 millimeters or less.

Abstract: A temperature controlled arrangement is provided for housing an optical component such as a laser diode that may be employed in a CATV system. The arrangement includes a package having an enclosure through which a plurality of electrical connections extend. At least one optical component is located in the enclosure and electrically connected to at least one of the electrical connections. A first thermoelectric cooler is also located in the enclosure and in thermal conduction with the optical component. A temperature sensor is located in the enclosure and electrically connected to at least one of the electrical connections. A second thermoelectric cooler, which is located external to the enclosure, is in thermal conduction with the enclosure.

Abstract: A semiconductor blue-light-laser apparatus for emitting laser beams with high positional accuracy, which is achieved by mounting a semiconductor laser element on a semiconductor substrate with high accuracy and reliability, and a production method of the apparatus. A recess in a surface of the substrate has a p-type layer 100, which is coated with the SiN layer 105, Ti layers 110a and 110b, Au layers 111a and 111b, heat sink layer 113, and solder layer 114. Semiconductor laser element 10 is placed and fixed on Au layer 111b. Heat sink layer 113 is inserted between Au layer 111a and Ti layer 110b and is approximately 20 ?m thick. Reflection unit 50 for reflecting laser beams LB includes at the surface thereof Al layer 116 and dielectric layer 117 as a reflection layer that provides a high refractive index for blue light laser beams.

Abstract: A laser chip is mounted on a die pad with respective leads being secured thereto through a package. The package includes a body portion which has at least an upper mold resin portion that covers the upper face side (B) with respect to a lower face of the die pad serving as a parting line (A); and two frame side walls, which extend in a direction parallel to the laser-beam outgoing direction (C) of the laser chip, and also extend ahead of the laser chip outgoing face (D) on both sides with the laser chip interposed therebetween. Slits are formed in each of the two frame side walls not in a direction perpendicular to the outgoing direction of the laser beam, but with a predetermined angle for correcting astigmatism, and transparent plate 7 is secured to the slits. Consequently, it is possible to provide a semiconductor laser for use in an optical disk, which has an inexpensive structure using not a can-type structure, but a lead frame and mold resin, and is capable of positively correcting astigmatism.

Abstract: In a laser-light source: submounts each being made of a material having a thermal expansion coefficient of 3.5 to 6.0×10?6/° C. and having a thickness of 200 to 400 micrometers are separately formed on a heat-dissipation block made of copper or copper alloy; a single-cavity nitride-based semiconductor laser chips are respectively mounted junction-side-down on the corresponding submounts; an optical condenser system collects laser beams emitted from the semiconductor laser chips, and couples the collected laser beams to a multimode optical fiber. A bonding surface of each semiconductor laser chip is bonded to a bonding surface of a corresponding submount through a metalization layer and an Au—Sn eutectic solder layer each of which is divided into areas.

Abstract: A driver IC and EML array are electrically coupled to one another via a flexible PCB. Thermal isolation between the driver IC and EML array is adjusted by varying a cross-section and length of electrically-conductive traces on the PCB.