Particular Coating On Facet Patents (Class 372/49.01)
  • Patent number: 10217897
    Abstract: Light-emitting devices having a multiple quantum well (MQW) diode structure and methods of making and using the devices are provided. The devices include aluminum nitride/aluminum oxide bilayers on their hole injection layers. The bilayers improve the energy efficiency of the devices, with respect to devices that lack the bilayers or that include only a layer of aluminum oxide on their hole injection layers.
    Type: Grant
    Filed: October 6, 2017
    Date of Patent: February 26, 2019
    Assignee: Wisconsin Alumni Research Foundation
    Inventors: Zhenqiang Ma, Kwangeun Kim
  • Patent number: 10103518
    Abstract: Semiconductor photonic device surfaces are covered with a dielectric or a metal protective layer. The protective layer covers the entire device, including regions near facets at active regions, to prevent bare or unprotected semiconductor regions, thereby to form a very high reliability etched facet photonic device.
    Type: Grant
    Filed: June 4, 2014
    Date of Patent: October 16, 2018
    Assignee: MACOM TECHNOLOGY SOLUTIONS HOLDINGS, INC.
    Inventor: Alex A. Behfar
  • Patent number: 10103517
    Abstract: Semiconductor photonic device surfaces are covered with a dielectric or a metal protective layer. The protective layer covers the entire device, including regions near facets at active regions, to prevent bare or unprotected semiconductor regions, thereby to form a very high reliability etched facet photonic device.
    Type: Grant
    Filed: June 4, 2014
    Date of Patent: October 16, 2018
    Assignee: MACOM TECHNOLOGY SOLUTIONS HOLDINGS, INC.
    Inventor: Alex A. Behfar
  • Patent number: 10063029
    Abstract: Provided is an optical transmission module in which noise is further reduced. The optical transmission module includes a first semiconductor layer having a first electrode arranged thereon, an active layer with a stripe shape formed on the first semiconductor layer, and a second semiconductor layer with a stripe shape formed on the active layer. The second semiconductor layer has a second electrode arranged thereon and includes a diffraction grating arranged along an extending direction of the active layer. The active layer includes a first portion having first stripe width, a second portion having a second stripe width smaller than the first stripe width, and a connection portion having a varying stripe width so as to connect the first portion and the second portion to each other. The diffraction grating overlaps with the first portion and does not overlap with the second portion in planar view.
    Type: Grant
    Filed: February 27, 2017
    Date of Patent: August 28, 2018
    Assignee: Oclaro Japan, Inc.
    Inventors: Atsushi Nakamura, Nozomu Yasuhara, Shunya Yamauchi, Yoriyoshi Yamaguchi, Yoshihiro Nakai
  • Patent number: 10038308
    Abstract: A quantum cascade semiconductor laser includes: a semiconductor mesa having a core layer extending in a direction of a first axis, and an end face extending in a direction of a second axis intersecting the direction of the first axis, and the semiconductor mesa being disposed on a principal surface of a substrate; and a reflective layer disposed on the end face of the semiconductor mesa, the reflective layer including a first semiconductor film in contact with the core layer, the core layer having a superlattice structure, the superlattice structure including a quantum well layer and a barrier layer, and the first semiconductor film of the reflective layer having a bandgap equal to or smaller than that of the quantum well layer.
    Type: Grant
    Filed: December 7, 2017
    Date of Patent: July 31, 2018
    Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventor: Jun-ichi Hashimoto
  • Patent number: 9941921
    Abstract: A modular wireless communications platform is provided. The modular wireless communications platform has a modular host unit and a modular remote unit in communication with the modular host unit. The modular host unit and remote unit include a serial radio frequency communicator configured to convert serial digital data into RF sampled data and configured to convert RF sampled data into serial digital data. The modular host unit and remote unit also include an interface coupled to the serial radio frequency communicator and configured to allow transfer of the RF sampled data from the serial radio frequency communicator to a digital to analog radio frequency transceiver module.
    Type: Grant
    Filed: February 27, 2017
    Date of Patent: April 10, 2018
    Assignee: CommScope Technologies LLC
    Inventors: Philip M. Wala, Robert J. Koziy, Dean Zavadsky
  • Patent number: 9912119
    Abstract: A quantum cascade laser is configured with a semiconductor substrate, and an active layer having a multistage lamination of emission layers and injection layers. The active layer is configured to be capable of generating first pump light of a frequency ?1 and second pump light of a frequency ?2, and to generate output light of a difference frequency ? by difference frequency generation. An external diffraction grating is provided for generating the first pump light, outside an element structure portion including the active layer, and an internal diffraction grating is provided for generating the second pump light, inside the element structure portion. The frequency ?2 is set to be fixed to a frequency not coincident with a gain peak, and the frequency ?1 is set to be variable to a frequency different from the frequency ?2.
    Type: Grant
    Filed: August 31, 2016
    Date of Patent: March 6, 2018
    Assignee: HAMAMATSU PHOTONICS K.K.
    Inventors: Akio Ito, Tatsuo Dougakiuchi, Kazuue Fujita, Tadataka Edamura
  • Patent number: 9768337
    Abstract: A photonic bandgap structure having multiple stacked layers has a thickness from the top of its top layer to the bottom of its bottom layer of less than one micron. Metal conducting layers having negative real dielectric constants are positioned between semiconductor layers having positive dielectric constants. The layers are arranged and stacked, and the thicknesses and materials for the semiconductor layers and conductive layers are selected to realize desired absorption, transmission, and reflection characteristics.
    Type: Grant
    Filed: March 30, 2015
    Date of Patent: September 19, 2017
    Assignee: The United States of America as represented by the Secretary of the Army
    Inventors: Domenico de Ceglia, Maria Antonietta Vincenti, Michael Scalora, Mirko Giuseppe Cappeddu
  • Patent number: 9703039
    Abstract: A method of fabricating an edge coupling device and an edge coupling device are provided. The method includes removing a portion of cladding material to form a trench over an inversely tapered silicon waveguide, depositing a material having a refractive index greater than silicon dioxide over remaining portions of the cladding material and in the trench, and removing a portion of the material within the trench to form a ridge waveguide.
    Type: Grant
    Filed: April 7, 2015
    Date of Patent: July 11, 2017
    Assignee: Futurewei Technologies, Inc.
    Inventors: Huapu Pan, Zongrong Liu, Hongzhen Wei, Hongmin Chen
  • Patent number: 9660419
    Abstract: Semiconductor photonic device surfaces are covered with a dielectric or a metal protective layer. The protective layer covers the entire device, including regions near facets at active regions, to prevent bare or unprotected semiconductor regions, thereby to form a very high reliability etched facet photonic device.
    Type: Grant
    Filed: June 4, 2014
    Date of Patent: May 23, 2017
    Assignee: MACOM TECHNOLOGY SOLUTIONS HOLDINGS, INC.
    Inventor: Alex A. Behfar
  • Patent number: 9653884
    Abstract: Semiconductor photonic device surfaces are covered with a dielectric or a metal protective layer. The protective layer covers the entire device, including regions near facets at active regions, to prevent bare or unprotected semiconductor regions, thereby to form a very high reliability etched facet photonic device.
    Type: Grant
    Filed: June 4, 2014
    Date of Patent: May 16, 2017
    Assignee: MACOM TECHNOLOGY SOLUTIONS HOLDINGS. INC.
    Inventor: Alex A. Behfar
  • Patent number: 9627849
    Abstract: Provided is a semiconductor light device comprising a semiconductor substrate having a first conduction type; a first cladding layer having the first conduction type deposited above the semiconductor substrate; an active layer; a second cladding layer having a second conduction type; and a contact layer. The active layer includes a window portion that is disordered via diffusion of vacancies and a non-window portion having less disordering than the window portion, and the contact layer includes a first region and a second region that is below the first region and has greater affinity for hydrogen than the first region.
    Type: Grant
    Filed: March 3, 2016
    Date of Patent: April 18, 2017
    Assignee: FURUKAWA ELECTRIC CO., LTD.
    Inventors: Hidehiro Taniguchi, Yutaka Ohki
  • Patent number: 9585193
    Abstract: A modular wireless communications platform is provided. The modular wireless communications platform has a modular host unit and a modular remote unit in communication with the modular host unit. The modular host unit and remote unit include a serial radio frequency communicator configured to convert serial digital data into RF sampled data and configured to convert RF sampled data into serial digital data. The modular host unit and remote unit also include an interface coupled to the serial radio frequency communicator and configured to allow transfer of the RF sampled data from the serial radio frequency communicator to a digital to analog radio frequency transceiver module.
    Type: Grant
    Filed: December 22, 2011
    Date of Patent: February 28, 2017
    Assignee: CommScope Technologies LLC
    Inventors: Philip M. Wala, Robert J. Koziy, Dean Zavadsky
  • Patent number: 9450375
    Abstract: In a high-power diode laser, facets which lie opposite one another contain in each case an amorphous layer system composed of silicon and carbon. The layer system is formed to perform the function both of a passivation layer and of the reflection-determining functional layers. This measure makes it possible to produce a high-power diode laser having a high COD threshold in conjunction with a long service life by way of a simplified method.
    Type: Grant
    Filed: August 30, 2010
    Date of Patent: September 20, 2016
    Assignee: M2K-Laser GmbH
    Inventors: Márc Kelemen, Rudolf Moritz, Jürgen Gilly, Patrick Friedmann
  • Patent number: 9379284
    Abstract: A nitride semiconductor light emitting chip includes: a conductive substrate including a nitride semiconductor layer; an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer sequentially formed on a principal surface of the nitride semiconductor layer; and an n-side electrode formed in contact with the conductive substrate. A recess is formed in a back surface of the conductive substrate opposite to the principal surface. The n-side electrode is in contact with at least part of a surface of the recess. A depth D1 is not less than 25% of a thickness T, where T represents a thickness of the conductive substrate, and D1 represents a depth of the recess.
    Type: Grant
    Filed: October 16, 2013
    Date of Patent: June 28, 2016
    Assignee: Panasonic Intellectual Property Management Co., Ltd.
    Inventors: Akira Inoue, Toshiyuki Fujita, Masaki Fujikane, Toshiya Yokogawa
  • Patent number: 9224923
    Abstract: A light enhancing structure includes a light emitting diode in it and at least one coating layer. The light emitting diode unit includes a plurality of surfaces and a light-emitting surface. The light-emitting surface is for allowing a plurality of lights generated inside the light emitting diode unit to emit through. The coating layer is formed on the surfaces for blocking or reflecting one of the lights generated inside the light emitting diode unit, and to light intensity of the light emitting diode unit is enhanced.
    Type: Grant
    Filed: June 18, 2014
    Date of Patent: December 29, 2015
    Assignee: PROLIGHT OPTO TECHNOLOGY CORPORATION
    Inventors: Chen-Lun Hsing Chen, Jung-Hao Hung, Ding-Yao Lin
  • Patent number: 9214613
    Abstract: A system and method for manufacturing a light-generating device is described. A preferred embodiment comprises a plurality of LEDs formed on a substrate. Each LED preferably has spacers along the sidewalls of the LED, and a reflective surface is formed on the substrate between the LEDs. The reflective surface is preferably located lower than the active layer of the individual LEDs.
    Type: Grant
    Filed: May 2, 2014
    Date of Patent: December 15, 2015
    Assignee: TSMC Solid State Lighting Ltd.
    Inventors: Ding-Yuan Chen, Chia-Lin Yu, Chen-Hua Yu, Wen-Chih Chiou
  • Patent number: 9202988
    Abstract: A nitride semiconductor light-emitting element includes a layered semiconductor body which is made of a group III nitride semiconductor, and includes a light-emitting facet, and a multilayer protective film which is formed to cover the light-emitting facet of the layered semiconductor body, and includes a plurality of insulating films. The multilayer protective film includes a first protective film and a second protective film covering the first protective film. The first protective film is a crystalline film which is made of nitride containing aluminum, and is at least partially crystallized. The second protective film is a crystalline film which is made of oxide containing aluminum, and is at least partially crystallized.
    Type: Grant
    Filed: August 12, 2014
    Date of Patent: December 1, 2015
    Assignee: Panasonic Intellectual Property Management Co., Ltd.
    Inventors: Shinji Yoshida, Atsunori Mochida
  • Patent number: 9160138
    Abstract: A light-emitting element array includes light-emitting elements that emit light in a direction perpendicular to a substrate. Each light-emitting element includes the substrate, a first nitride semiconductor layer on the substrate and having a mesa portion, an active layer made of a nitride semiconductor disposed on the surface of the mesa portion of the first semiconductor layer opposite the substrate, a second nitride semiconductor layer on the active layer, and a heat radiation layer disposed so that the surface formed by projecting the heat radiation layer on a plane perpendicular to the optical axis of the light-emitting element does not overlap with the surface formed by projecting the mesa portion on the same plane when viewed in the optical axis direction. When the light-emitting element is projected on a plane perpendicular to the optical axis, the surface has an area in a specific range.
    Type: Grant
    Filed: November 25, 2014
    Date of Patent: October 13, 2015
    Assignee: CANON KABUSHIKI KAISHA
    Inventors: Katsuyuki Hoshino, Takeshi Uchida
  • Publication number: 20150124847
    Abstract: Provided is a highly reliable nitride semiconductor laser element having a robust end face protection film not being peeled even in laser operation. The nitride semiconductor laser element includes: a semiconductor multi-layer structure including a group III nitride semiconductor and having a light-emitting end face; and a protection film including a dielectric multi-layer film and covering the light-emitting end face of the semiconductor multi-layer structure. The protection film includes an end face protection layer and an oxygen diffusion suppression layer arranged sequentially in stated order from the light-emitting end face. The end face protection layer includes a crystalline film comprising nitride including aluminum. The oxygen diffusion suppression layer has a structure in which a metal oxide film is between silicon oxide films. The metal oxide film is crystallized by laser light.
    Type: Application
    Filed: November 30, 2014
    Publication date: May 7, 2015
    Inventors: SHINJI YOSHIDA, ATSUNORI MOCHIDA, TAKAHIRO OKAGUCHI
  • Patent number: 9025633
    Abstract: An optical device includes a ridge semiconductor laser element formed on a substrate, a first insulating film coating a lateral wall portion of a ridge structure of the ridge semiconductor laser element, and a second insulating film coating the ridge structure from above the first insulating film in an end portion region of the ridge structure. The second insulating film has a density lower than a density of the first insulating film.
    Type: Grant
    Filed: August 9, 2013
    Date of Patent: May 5, 2015
    Assignee: Furukawa Electric Co., Ltd.
    Inventors: Kouhei Kinugawa, Hidehiro Taniguchi
  • Patent number: 9019999
    Abstract: A compact, optically-pumped solid-state microchip laser device uses efficient nonlinear intracavity frequency conversion for obtaining low-cost green and blue laser sources. The laser includes a solid-state gain medium, such as Nd:YVO4, and a nonlinear crystal. The nonlinear crystal is formed of periodically poled lithium niobate or periodically poled lithium tantalate, and the crystal is either MgO-doped, ZnO-doped, or stoichiometric to ensure high reliability. The nonlinear crystal provides efficient frequency doubling to translate energy from an infrared pump laser beam into the visible wavelength range. The laser device is assembled in a package having an output aperture for the output beam and being integrated with an optical bench accommodating a laser assembly. The package encloses and provides heat sinking for the semiconductor diode pump laser, the microchip laser cavity assembly, the optical bench platform, and electrical leads.
    Type: Grant
    Filed: September 4, 2009
    Date of Patent: April 28, 2015
    Assignee: Spectralus Corporation
    Inventors: Stepan Essaian, Dzhakhangir Khaydarov, Andrei V. Shchegrov
  • Patent number: 9014227
    Abstract: A method of fabricating a semiconductor laser device by forming a semiconductor structure at least part of which is in the form of a mesa structure having a flat top. The steps include depositing a passivation layer over the mesa structure, forming a contact opening in the passivation layer on the flat top of the mesa structure; and depositing a metal contact portion, with the deposited metal contact portion contacting the semiconductor structure via the contact opening. The contact opening formed through the passivation layer has a smaller area than the flat top of the mesa structure to allow for wider tolerances in alignment accuracy. The metal contact portion comprises a platinum layer between one or more gold layers to provide an effective barrier against Au diffusion into the semiconductor material.
    Type: Grant
    Filed: December 9, 2013
    Date of Patent: April 21, 2015
    Assignee: Emcore Corporation
    Inventors: Jia-Sheng Huang, Phong Thai
  • Patent number: 8982921
    Abstract: An edge-emitting optical semiconductor structure has a substrate, an active multiple quantum well (MQW) region formed on the substrate, and a ridge waveguide extending between first and second etched end facets. The first etched end facet is disposed in a first window, while the second etched end facet is disposed in a second window. The first etched end facet extends between a pair of alcoves in the first window, and the second etched end facet extends between a pair of alcoves in the second window. An integrated device in which two such structures are provided has an H-shaped window where the two structures adjoin each other. The structure can be fabricated using a process that involves a first mask to form the ridge waveguide and then a second mask and an etching process to form the windows.
    Type: Grant
    Filed: February 7, 2013
    Date of Patent: March 17, 2015
    Assignee: Avago Technologies General IP (Singapore) Pte. Ltd.
    Inventors: Ruiyu Fang, Giammarco Rossi, Alessandro Stano, Giuliana Morello, Paola-Ida Gotta, Roberto Paoletti, Pietro Della Casa, Giancarlo Meneghini
  • Patent number: 8976832
    Abstract: A multi-wavelength semiconductor laser device includes: first and second device sections monolithically formed on a substrate; and a rear end face film formed together on a rear end face of each of the first and second device sections. The first device section is a light-emitting device section having an oscillation wavelength of ?1. The second device section is a light-emitting device section having an oscillation wavelength of ?2 (?1<?2). The rear end face film includes a layer in which N sets (N?2) of layers each having the combination of a low refractive index layer having a refractive index of n1 and a high refractive index layer having a refractive index of n3 (n1<n3) as one set are laminated, and an intermediate refractive index layer having a refractive index of n2 (n1<n2<n3) in order from the rear end face side, and is constituted by a film different from an Si film.
    Type: Grant
    Filed: March 15, 2012
    Date of Patent: March 10, 2015
    Assignee: Sony Corporation
    Inventors: Yoshihiko Takahashi, Fumitake Oikawa
  • Patent number: 8964808
    Abstract: A laser light source comprises, in particular, a semiconductor layer sequence (10) having an active region (45) and a radiation coupling-out area (12) having a first partial region (121) and a second partial region (122) different than the latter, and a filter structure (5), wherein the active region (45) generates, during operation, coherent first electromagnetic radiation (51) having a first wavelength range and incoherent second electromagnetic radiation (52) having a second wavelength range, the coherent first electromagnetic radiation (51) is emitted by the first partial region (121) along an emission direction (90), the incoherent second electromagnetic radiation (52) is emitted by the first partial region (121) and by the second partial region (122), the second wavelength range comprises the first wavelength range, and the filter structure (5) at least partly attenuates the incoherent second electromagnetic radiation (52) emitted by the active region along the emission direction (90).
    Type: Grant
    Filed: December 17, 2008
    Date of Patent: February 24, 2015
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Alfred Lell, Christoph Eichler, Wolfgang Schmid, Soenke Tautz, Wolfgang Reill, Dimitri Dini
  • Patent number: 8953656
    Abstract: A Group III nitride semiconductor laser device includes a laser structure including a support substrate with a semipolar primary surface of a hexagonal Group III nitride semiconductor, and a semiconductor region thereon, and an electrode, provided on the semiconductor region, extending in a direction of a waveguide axis in the laser device. The c-axis of the nitride semiconductor is inclined at an angle ALPHA relative to a normal axis to the semipolar surface toward the waveguide axis direction. The laser structure includes first and second fractured faces intersecting with the waveguide axis. A laser cavity of the laser device includes the first and second fractured faces extending from edges of first and second faces. The first fractured face includes a step provided at an end face of an InGaN layer of the semiconductor region and extending in a direction from one side face to the other of the laser device.
    Type: Grant
    Filed: January 19, 2012
    Date of Patent: February 10, 2015
    Assignees: Sumitomo Electric Industries, Ltd., Sony Corporation
    Inventors: Takashi Kyono, Shimpei Takagi, Takamichi Sumitomo, Yusuke Yoshizumi, Yohei Enya, Masaki Ueno, Katsunori Yanashima
  • Patent number: 8948605
    Abstract: The present document relates to passive optical networks (PON). More particularly but not exclusively, it relates to the use of a reflective semiconductor optical amplifier (RSOA) for amplifying signals in a Gigabit PON (GPON) or WDM-PON. An apparatus configured to amplify light at different wavelengths in an optical network is described. The apparatus comprises a first active material configured to amplify light at a first wavelength and a second active material configured to amplify light at a second wavelength. Furthermore, the apparatus comprises a first reflector which separates the first and second active materials and which is configured to reflect light at the first wavelength and which is configured to be substantially transparent to light at the second wavelength. In addition, the apparatus comprises a second reflector adjacent the second active material opposite to the first reflector which is configured to reflect light at the second wavelength.
    Type: Grant
    Filed: June 16, 2011
    Date of Patent: February 3, 2015
    Assignee: Alcatel Lucent
    Inventors: Romain Brenot, Francis Poingt
  • Patent number: 8908732
    Abstract: A group-III nitride semiconductor laser device comprises: a laser structure including a semiconductor region and a support base having a semipolar primary surface of group-III nitride semiconductor; a first reflective layer, provided on a first facet of the region, for a lasing cavity of the laser device; and a second reflective layer, provided on a second facet of the region, for the lasing cavity. The laser structure includes a laser waveguide extending along the semipolar surface. A c+ axis vector indicating a <0001> axial direction of the base tilts toward an m-axis of the group-III nitride semiconductor at an angle of not less than 63 degrees and less than 80 degrees with respect to a vector indicating a direction of an axis normal to the semipolar surface. The first reflective layer has a reflectance of less than 60% in a wavelength range of 525 to 545 nm.
    Type: Grant
    Filed: May 17, 2013
    Date of Patent: December 9, 2014
    Assignees: Sumitomo Electric Industries, Ltd., Sony Corporation
    Inventors: Masaki Ueno, Koji Katayama, Takatoshi Ikegami, Takao Nakamura, Katsunori Yanashima, Hiroshi Nakajima
  • Patent number: 8891572
    Abstract: A semiconductor laser device has structure including: a semiconductor laser chip having an emission surface and a reflection surface which are opposing end surfaces of a resonator; and a photodiode for detecting light that exits from the reflection surface side, the photodiode being used in a wavelength band where a sensitivity of the photodiode rises as a wavelength lengthens, in which the emission surface has a first dielectric multilayer film formed thereon and the reflection surface has a second dielectric multilayer film formed thereon, and in which, when a wavelength at which a reflectance of the first dielectric multilayer film peaks is given as ?f and a wavelength at which a reflectance of the second dielectric multilayer film peaks is given as ?r, a relation ?f<?r is satisfied.
    Type: Grant
    Filed: May 26, 2010
    Date of Patent: November 18, 2014
    Assignee: Sharp Kabushiki Kaisha
    Inventor: Ryuichi Sogabe
  • Patent number: 8879599
    Abstract: The invention relates to a semiconductor laser having at least one semiconductor substrate (10), at least one active layer (20) arranged on the semiconductor substrate (10) which generates radiation in a wavelength region, at least one laser mirror (40) which is applied at one end of the active layer (20) perpendicular thereto, through which a part of the radiation generated in the active layer (20) emerges, and which is provided with a layer of absorbing material (50, 60) said layer being suitable for reducing a gradient of the luminous-power/current characteristic for radiation emerging through the laser mirror (40).
    Type: Grant
    Filed: August 11, 2010
    Date of Patent: November 4, 2014
    Assignee: nanoplus GmbH Nanosystems and Technologies
    Inventor: Johannes Bernhard Koeth
  • Patent number: 8866041
    Abstract: A manufacturing method of laser diode unit of the present invention includes steps: placing a laser diode on top of a solder member formed on a mounting surface of a submount, applying a pressing load to the laser diode and pressing the laser diode against the solder member, next, melting the solder member by heating the solder member at a temperature higher than a melting point of the solder member while the pressing load is being applied, and thereafter, bonding the laser diode to the submount by cooling and solidifying the solder member, thereafter, removing the pressing load, and softening the solidified solder member by heating the solder member at a temperature lower than the melting point of the solder member after the pressing load has been removed, and thereafter cooling and re-solidifying the solder member.
    Type: Grant
    Filed: April 12, 2012
    Date of Patent: October 21, 2014
    Assignees: TDK Corporation, Rohm Co., Ltd, SAE Magnetics (H.K.) Ltd.
    Inventors: Koji Shimazawa, Osamu Shindo, Yoshihiro Tsuchiya, Yasuhiro Ito, Kenji Sakai
  • Publication number: 20140286370
    Abstract: Semiconductor photonic device surfaces are covered with a dielectric or a metal protective layer. The protective layer covers the entire device, including regions near facets at active regions, to prevent bare or unprotected semiconductor regions, thereby to form a very high reliability etched facet photonic device.
    Type: Application
    Filed: June 4, 2014
    Publication date: September 25, 2014
    Applicant: BINOPTICS CORPORATION
    Inventor: Alex A. BEHFAR
  • Publication number: 20140286368
    Abstract: Semiconductor photonic device surfaces are covered with a dielectric or a metal protective layer. The protective layer covers the entire device, including regions near facets at active regions, to prevent bare or unprotected semiconductor regions, thereby to form a very high reliability etched facet photonic device.
    Type: Application
    Filed: June 4, 2014
    Publication date: September 25, 2014
    Applicant: BinOptics Corporation
    Inventor: Alex A. BEHFAR
  • Patent number: 8824520
    Abstract: A laser includes: a substrate; a first reflector including pairs of high and low refractive index layers; an active region forming a resonator; a second reflector including an emission surface and pairs of high and low refractive index layers; an extending region thicker than oscillation wavelength, extending the length of the resonator, and including a conductive semiconductor material; a confining layer including a high refractive index region and a surrounding low refractive index region; and an additional film allowing the oscillation wavelength to transmit therethrough. The first and second reflectors, the extending region, and the active region determine a reflection band including resonance wavelengths, in one of which oscillation occurs. The additional film includes central and outer circumferential portions having different thicknesses to suppress resonance in the high refractive index region and the extending region.
    Type: Grant
    Filed: May 21, 2013
    Date of Patent: September 2, 2014
    Assignee: Fuji Xerox Co., Ltd.
    Inventors: Takashi Kondo, Kazutaka Takeda
  • Publication number: 20140211823
    Abstract: In the semiconductor laser including a diffraction grating in which a first diffraction grating region with a first pitch, a second diffraction grating region with a second pitch and a third diffraction grating region with the first pitch, an anti-reflection film coated on an end facet to the light-emitting side, and a reflection film coated on an opposite end facet, the first diffraction grating region is greater than the third diffraction grating region, and the second diffraction grating region is formed, in such a manner that phases of the first and third diffraction grating regions are shifted in a range of equal to or more than 0.6 ? to equal to or less than 0.9 ?, phases are successive on a boundary between the first and second diffraction grating regions and the phases are successive on a boundary between the second and third diffraction grating regions.
    Type: Application
    Filed: January 29, 2014
    Publication date: July 31, 2014
    Applicant: Oclaro Japan, Inc.
    Inventors: Kouji NAKAHARA, Yuki WAKAYAMA
  • Patent number: 8787419
    Abstract: Semiconductor photonic device surfaces are covered with a dielectric or a metal protective layer. The protective layer covers the entire device, including regions near facets at active regions, to prevent bare or unprotected semiconductor regions, thereby to form a very high reliability etched facet photonic device.
    Type: Grant
    Filed: February 17, 2006
    Date of Patent: July 22, 2014
    Assignee: Binoptics Corporation
    Inventor: Alex A. Behfar
  • Patent number: 8774242
    Abstract: A surface emitting laser diode comprises a substrate, a lower reflector formed over the substrate, an active layer formed over the lower reflector, an upper reflector formed over the active layer, a current restrict structure including a current confinement region surrounded by insulation region. The current restrict structure is disposed in an upper reflector or between an active layer and the upper reflector, and an upper electrode formed over the upper reflector includes an aperture which corresponds to an emission region from which light is emitted in a first direction perpendicular to a surface of a substrate. The emission region and the current restrict structure including the current confinement region are selectively configured to obtain high single transverse mode, stabilized polarization direction, isotropic beam cross section and small divergence angle, while allowing the device to be manufactured with high yield rate.
    Type: Grant
    Filed: May 8, 2012
    Date of Patent: July 8, 2014
    Assignee: Ricoh Company, Ltd.
    Inventors: Akihiro Itoh, Kazuhiro Harasaka, Shunichi Sato, Naoto Jikutani
  • Publication number: 20140161147
    Abstract: An LED includes a chip having a light emitting surface, and a coating of phosphor-containing material on the light emitting surface. The phosphor-containing material comprises at least two quantities of different phosphor particles and are arranged in a densely packed layer within the coating at the light emitting surface. The densely packed layer of phosphor particles does not extend all the way through the coating.
    Type: Application
    Filed: February 11, 2014
    Publication date: June 12, 2014
    Inventors: James Ibbetson, Peter S. Andrews
  • Patent number: 8705586
    Abstract: To suppress the amplification of spontaneous emission light in a principal plane width direction to thereby suppress a gain in directions other than a beam axis direction and output a high-power laser, in a solid-state laser element of a plane waveguide type that causes a fundamental wave laser beam to oscillate in a beam axis direction in a laser medium of a flat shape and forms a waveguide structure in a thickness direction as a direction perpendicular to a principal plane of the flat shape in the laser medium, inclined sections 12 are provided on both sides of the laser medium, the inclined sections 12 inclining a predetermined angle to reflect spontaneous emission light in the laser medium to a principal plane side of the flat shape, the spontaneous emission light traveling in the beam axis direction and a principal plane width direction as a direction perpendicular to the thickness direction.
    Type: Grant
    Filed: August 30, 2007
    Date of Patent: April 22, 2014
    Assignee: Mitsubishi Electric Corporation
    Inventors: Shuhei Yamamoto, Takayuki Yanagisawa, Yasuharu Koyata, Yoshihito Hirano
  • Patent number: 8699538
    Abstract: A quantum cascade laser is configured to include a semiconductor substrate, and an active layer that is provided on the substrate and has a cascade structure formed by alternately laminating emission layers and injection layers by multistage-laminating unit laminate structures each consisting of the quantum well emission layer and the injection layer, and generates light by intersubband transition in a quantum well structure. In a laser cavity structure for light with a predetermined wavelength generated in the active layer, a front reflection film with a reflectance of not less than 40% and not more than 99% for laser oscillation light is formed on the front end face that becomes a laser beam output surface, and a back reflection film with a reflectance higher than that of the front reflection film for the laser oscillation light is formed on the back end face.
    Type: Grant
    Filed: November 16, 2011
    Date of Patent: April 15, 2014
    Assignee: Hamamatsu Photonics K.K.
    Inventors: Tadataka Edamura, Kazuue Fujita, Tatsuo Dougakiuchi, Masamichi Yamanishi
  • Patent number: 8654808
    Abstract: A nitride semiconductor laser element has: a nitride semiconductor layer having cavity planes at the ends of a waveguide region, an insulating film formed on an upper face of the nitride semiconductor layer so that the ends on the cavity plane side are isolated from cavity planes, and a first film formed from the cavity plane to the upper face of the nitride semiconductor layer, and covered part of the insulating film surface, the first film has a first region that is in contact with the nitride semiconductor and a second region that is in contact with the insulating film, and is formed from AlxGa1-xN (0<x?1) and a different material from that of the insulating film.
    Type: Grant
    Filed: July 29, 2011
    Date of Patent: February 18, 2014
    Assignee: Nichia Corporation
    Inventor: Tomonori Morizumi
  • Patent number: 8649409
    Abstract: A surface-emitting laser device includes a lower reflector, a resonator structure having an active layer and an upper reflector on an inclined substrate, and an emission region emitting laser light enclosed by an electrode. The upper reflector includes a confinement structure having a current passing region enclosed by an oxide containing at least an oxide generated as a result of partial oxidation of a layer containing aluminum subject to selective oxidation, and a dielectric film formed within the emission region, the dielectric film at least enclosing a partial region including a center of the emission region. In viewing from a direction orthogonal to the emission region, a center of a region enclosed by the dielectric film is located at a position distant from the center of the emission region based on a size of the confinement structure relative to a direction orthogonal to an inclined axis of the inclined substrate.
    Type: Grant
    Filed: July 31, 2012
    Date of Patent: February 11, 2014
    Assignee: Ricoh Company, Ltd.
    Inventors: Toshihide Sasaki, Kazuhiro Harasaka
  • Patent number: 8634442
    Abstract: An optical device includes a gallium nitride substrate member having an m-plane nonpolar crystalline surface region characterized by an orientation of about ?1 degree towards (000-1) and less than about +/?0.3 degrees towards (11-20). The device also has a laser stripe region formed overlying a portion of the m-plane nonpolar crystalline orientation surface region. In a preferred embodiment, the laser stripe region is characterized by a cavity orientation that is substantially parallel to the c-direction, the laser stripe region having a first end and a second end. The device includes a first cleaved c-face facet, which is coated, provided on the first end of the laser stripe region. The device also has a second cleaved c-face facet, which is exposed, provided on the second end of the laser stripe region.
    Type: Grant
    Filed: August 25, 2010
    Date of Patent: January 21, 2014
    Assignee: Soraa Laser Diode, Inc.
    Inventors: James W. Raring, Daniel F. Feezell, Nicholas J. Pfister, Rajat Sharma, Mathew C. Schmidt, Christiane Poblenz, Yu-Chia Chang
  • Patent number: 8628988
    Abstract: A method of fabricating a semiconductor laser device by forming a semiconductor structure at least part of which is in the form of a mesa structure having a flat top. The steps include depositing a passivation layer over the mesa structure, forming a contact opening in the passivation layer on the flat top of the mesa structure; and depositing a metal contact portion, with the deposited metal contact portion contacting the semiconductor structure via the contact opening. The contact opening formed through the passivation layer has a smaller area than the flat top of the mesa structure to allow for wider tolerances in alignment accuracy. The metal contact portion comprises a platinum layer between one or more gold layers to provide an effective barrier against Au diffusion into the semiconductor material.
    Type: Grant
    Filed: December 21, 2011
    Date of Patent: January 14, 2014
    Assignee: Emcore Corporation
    Inventors: Jia-Sheng Huang, Phong Thai
  • Patent number: 8610148
    Abstract: An optical module is described, where the optical module installs an optical device whose identification mark is able to be distinguished even after the optical device is installed in the optical module. The identifying mark of the optical device is formed in a position able to be inspected from the direction of the normal line of the light-emitting facet of the optical device. Accordingly, the identifying mark becomes able to be identified through the lens after the optical device is installed in the package of the optical module.
    Type: Grant
    Filed: September 29, 2010
    Date of Patent: December 17, 2013
    Assignee: Sumitomo Electric Industries Ltd.
    Inventor: Toshio Nomaguchi
  • Patent number: 8599895
    Abstract: A semiconductor laser device includes a p-type clad layer and an n-type clad layer, a p-side guide layer and an n-side guide layer interposed between the p-type clad layer and the n-type clad layer, and an active layer interposed between the p-side guide layer and the n-side guide layer. The active layer includes at least two quantum well layers and a barrier layer interposed between the quantum well layers adjoining to each other. Each of the p-type clad layer and the n-type clad layer is formed of a (Alx1Ga(1-x1))0.51In0.49P layer (0?x1?1). Each of the p-side guide layer, the n-side guide layer and the barrier layer is formed of a Alx2Ga(1-x2)As layer (0?x2?1). Each of the quantum well layers is formed of a GaAs(1-x3)Px3 layer (0?x3?1). The (Alx1Ga(1-x1))0.51In0.49P layer has a composition satisfying an inequality, x1>0.7. The Alx2Ga(1-x2)As layer has a composition satisfying an inequality, 0.4?x2?0.8.
    Type: Grant
    Filed: July 27, 2012
    Date of Patent: December 3, 2013
    Assignee: Rohm Co., Ltd.
    Inventors: Yoshita Nishioka, Yoichi Mugino, Tsuguki Noma
  • Patent number: 8582617
    Abstract: An 830 nm broad area semiconductor laser having a distributed Bragg reflector (DBR) structure. The semiconductor laser supports multiple horizontal transverse modes of oscillation extending within a plane perpendicular to a crystal growth direction of the laser, in a direction perpendicular to the length of the resonator of the laser. The resonator includes a diffraction grating in the vicinity of the emitting facet of the laser. The width of the diffraction grating in a plane perpendicular to the growth direction and perpendicular to the length of the resonator is different at first and second locations along the length of the resonator. The width of the diffraction grating along a direction which is perpendicular to the length of the resonator increases with increasing distance from the front facet of the semiconductor laser.
    Type: Grant
    Filed: March 20, 2012
    Date of Patent: November 12, 2013
    Assignee: Mitsubishi Electric Corporation
    Inventor: Kimio Shigihara
  • Patent number: 8582618
    Abstract: A surface-emitting semiconductor laser device that includes an edge-emitting laser formed in layers of semiconductor material disposed on a semiconductor substrate, a polymer material disposed on the substrate laterally adjacent the layers in which the edge-emitting laser is formed, a diffractive or refractive lens formed on an upper surface of the polymer material, a side reflector formed on an angled side reflector facet of the polymer material generally facing an exit end facet of the laser, and a lower reflector disposed on the substrate beneath the polymer material. Laser light passes out of the exit end facet and propagates through the polymer material before being reflected by the side reflector toward the lower reflector. The laser light is then re-reflected by the lower reflector towards the lens, which directs the laser light out the device in a direction that is generally normal to the upper surface of the substrate.
    Type: Grant
    Filed: January 18, 2011
    Date of Patent: November 12, 2013
    Assignee: Avago Technologies General IP (Singapore) Pte. Ltd.
    Inventors: Guido Alberto Roggero, Rui Yu Fang, Alessandro Stano, Giuliana Morello
  • Patent number: RE45084
    Abstract: The present invention is a method of fabricating an optical device using multiple sacrificial spacer layers. The first step in this process is to fabricate the underlying base structure and deposit an optical structure thereon. A facet is then created at the ends of the optical structure and alternating sacrificial and intermediate layers are fabricated on the device. A mask layer is deposited on the structure, with openings created in the layers to allow use of an etchant. User-defined portions of the spacer layers are subsequently removed with the etchant to create air gaps between the intermediate layers.
    Type: Grant
    Filed: April 19, 2012
    Date of Patent: August 19, 2014
    Assignee: National Security Agency
    Inventors: John L. Fitz, Daniel S. Hinkel, Scott C. Horst