Semiconductor Patents (Class 372/43.01)
  • Patent number: 10770866
    Abstract: A light emitting device includes a base defining a recess, a lid portion, first and second semiconductor laser elements, and a collimate lens. The lid portion covers the recess so that a hermetically sealed space is defined by the lid portion and the base, the lid portion having a bottom surface fixed to the base and a top surface opposite to the bottom surface. The first and second semiconductor laser elements are provided in the hermetically sealed space. The first and second semiconductor laser elements respectively irradiate first and second lights having first and second peak wavelengths in a visible range. The collimate lens is fixed on the top surface of the lid portion with an adhesive. The collimate lens has a plurality of lens portions including a first lens portion through which the first light passes, and a second lens portion through which the second light passes.
    Type: Grant
    Filed: August 20, 2019
    Date of Patent: September 8, 2020
    Assignee: NICHIA CORPORATION
    Inventors: Soichiro Miura, Kazuma Kozuru
  • Patent number: 10754222
    Abstract: A light steering apparatus is provided including a tunable laser source and a system including the light steering apparatus. The light steering apparatus includes the tunable laser source and a steering device. A plurality of laser beams having optical coherence with each other and output from the tunable laser source are incident onto the steering device, and the steering device includes a plurality of modulation units for beam steering.
    Type: Grant
    Filed: November 14, 2018
    Date of Patent: August 25, 2020
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Changgyun Shin, Dongjae Shin, Dongsik Shim, Changbum Lee
  • Patent number: 10707643
    Abstract: The purpose of the present invention is to provide a laser light source module that is capable of heat dissipation from a laser device and of suppressing the diffusion of a light beam due to the close arrangement of the laser device. The laser light source module comprises a stem that is a base plate and first and second laser assemblies disposed on the stem. Each of the laser assemblies comprises a multi-emitter LD bar that is a laser device emitting a laser light along an optical axis, and a holding member having a mounting surface parallel to the axis, the multi-emitter LD bar being mounted on the mounting surface. The first and second laser assemblies are positioned such that the optical axes of the assemblies are parallel to each other and that the mounting surfaces of the assemblies are arranged opposite to each other in parallel.
    Type: Grant
    Filed: April 4, 2019
    Date of Patent: July 7, 2020
    Assignee: MITSUBISHI ELECTRIC CORPORATION
    Inventors: Daisuke Morita, Kazutaka Ikeda, Motoaki Tamaya
  • Patent number: 10707374
    Abstract: A method of forming a light emitting device includes forming a growth mask layer including openings on a doped compound semiconductor layer, forming first light emitting diode (LED) subpixels by forming a plurality of active regions and second conductivity type semiconductor material layers employing selective epitaxy processes, and transferring each first LED subpixel to a backplane. An anode contact electrode may be formed on the second conductivity type semiconductor material layers for redundancy. The doped compound semiconductor layer may be patterned with tapered sidewalls to enhance etendue. An optically clear encapsulation matrix may be formed on the doped compound semiconductor material layer to enhance etendue. Lift-off processes may be employed for the active regions. Cracking of the LEDs may be suppressed employing a thick reflector layer.
    Type: Grant
    Filed: September 6, 2018
    Date of Patent: July 7, 2020
    Assignee: GLO AB
    Inventors: Fariba Danesh, Benjamin Leung, Tsun Lau, Zulal Tezcan, Miao-Chan Tsai, Max Batres, Michael Joseph Cich
  • Patent number: 10694931
    Abstract: An endoscope includes an optical transmission module configured to convert each of the image pickup signal and the test signal into an optical signal and output the optical signal, and a signal amplitude measuring section configured to add signal amplitude information to the image pickup signal and the test signal, and a video processor includes an optical reception module configured to receive the optical signals and convert each of the optical signals into an electric signal and output the electric signal, an information acquiring section configured to acquire transmission information on each of the optical signals, the transmission information including the signal amplitude information, a determination section configured to determine a state of transmission of the optical signal, and a power supply adjusting section configured to adjust the applied voltage for the optical transmission module according to a result of the determination and output the applied voltage.
    Type: Grant
    Filed: December 4, 2018
    Date of Patent: June 30, 2020
    Assignee: OLYMPUS CORPORATION
    Inventors: Tsutomu Urakawa, Susumu Kawata
  • Patent number: 10693035
    Abstract: A heterostructure for use in an electronic or optoelectronic device is provided. The heterostructure includes one or more semiconductor layers containing columnar nanostructures (e.g., nanowires). The nanowire semiconductor layer can include sub-layers of varying composition, at least one of which is an active layer that can include quantum wells and barriers. A heterostructure can include n-type and p-type semiconductor contact layers adjacent to the nanowire semiconductor layer containing the active layer.
    Type: Grant
    Filed: October 23, 2016
    Date of Patent: June 23, 2020
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Michael Shur, Grigory Simin, Alexander Dobrinsky
  • Patent number: 10686296
    Abstract: An optoelectronic component includes a layer structure including an active zone that generates electromagnetic radiation, wherein the active zone is arranged in a plane, the layer structure includes a top side and four side faces, the first and third side faces are arranged opposite one another, the second and fourth side faces are arranged opposite one another, a strip-type ridge structure is arranged on the top side of the layer structure, the ridge structure extends between the first side face and the third side face, the first side face constitutes an emission face for electromagnetic radiation, a first recess is introduced into the top side of the layer structure laterally alongside the ridge structure, a second recess is introduced into the first recess, and the second recess extends as far as the second side face.
    Type: Grant
    Filed: September 29, 2016
    Date of Patent: June 16, 2020
    Assignee: OSRAM OLED GmbH
    Inventors: Sven Gerhard, Alfred Lell, Clemens Vierheilig, Andreas Löffler
  • Patent number: 10644482
    Abstract: An etched planarized VCSEL includes: an active region; a blocking region over the active region, and defining apertures therein; and conductive channel cores in the apertures, wherein the conductive channel cores and blocking region form an isolation region. A method of making the VCSEL includes: forming the active region; forming the blocking region over the active region; etching the apertures in the blocking region; and forming the conductive channel cores in the apertures of the blocking region. Another etched planarized VCSEL includes: an active region; a conductive region over the active region, and defining apertures therein; and blocking cores in the apertures, wherein the blocking cores and conductive region form an isolation region. A method of making the VCSEL includes: forming the active region; forming the conductive region over the active region; etching the apertures in the conductive region; and forming the blocking cores in the apertures of the conductive region.
    Type: Grant
    Filed: March 12, 2019
    Date of Patent: May 5, 2020
    Assignee: Finisar Corporation
    Inventors: Luke Graham, Andy MacInnes
  • Patent number: 10630049
    Abstract: In various embodiments, passivation layers are deposited on internal surfaces of cooling channels defined within heat sinks for electronic devices such as laser beam emitters, the passivation layers retarding or substantially preventing erosion and/or corrosion of the heat sinks.
    Type: Grant
    Filed: October 17, 2017
    Date of Patent: April 21, 2020
    Assignee: TERADIODE, INC.
    Inventors: Robin Huang, Bien Chann, Parviz Tayebati
  • Patent number: 10622784
    Abstract: In various embodiments, laser apparatuses include thermal bonding layers between various components and sealing materials for preventing or retarding movement of thermal bonding material out of the thermal bonding layers.
    Type: Grant
    Filed: April 29, 2019
    Date of Patent: April 14, 2020
    Assignee: TERADIODE, INC.
    Inventors: Parviz Tayebati, Michael Deutsch
  • Patent number: 10622785
    Abstract: A vertical cavity surface emitting laser (VCSEL) composite assembly includes a VCSEL, a substrate spaced from the VCSEL, and at least one metal layer disposed between the VCSEL and the substrate to facilitate efficient thermal management of the assembly.
    Type: Grant
    Filed: January 29, 2016
    Date of Patent: April 14, 2020
    Assignee: UNIVERSITY OF SOUTHERN CALIFORNIA
    Inventors: Jongseung Yoon, Dongseok Kang
  • Patent number: 10586884
    Abstract: A multi-junction optoelectronic device and method of fabrication are disclosed. In an aspect, the method includes forming a first p-n structure on a substrate, the first p-n structure including a semiconductor having a lattice constant that matches a lattice constant of the substrate; forming one or more additional p-n structures on the first p-n structure, each of the one or more additional p-n structures including a semiconductor having a lattice constant that matches the lattice constant of the substrate, the semiconductor of a last of the one or more additional p-n structures that is formed including a dilute nitride, and the multi-junction optoelectronic device including the first p-n structure and the one or more additional p-n structures; and separating the multi-junction optoelectronic device from the substrate. In some implementations, it is possible to have the dilute nitride followed by a group IV p-n structure.
    Type: Grant
    Filed: June 18, 2018
    Date of Patent: March 10, 2020
    Assignee: ALTA DEVICES, INC.
    Inventors: Nikhil Jain, Brendan M. Kayes, Gang He
  • Patent number: 10587095
    Abstract: A vertical cavity surface emitting laser includes a gain layer configured to generate light; a distributed Bragg reflector below the gains layer; and a meta structure reflector above the gain layer and comprising a plurality of nano structures having a sub wavelength dimension.
    Type: Grant
    Filed: November 6, 2017
    Date of Patent: March 10, 2020
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Byunghoon Na, Seunghoon Han
  • Patent number: 10578819
    Abstract: A surface light emitting semiconductor laser element, comprises a substrate, a lower reflector including a semiconductor multi-layer disposed on the substrate, an active layer disposed on the lower reflector, an upper reflector including a semiconductor multi-layer disposed on the active layer, a compound semiconductor layer having a first opening for exposing the upper reflector and extending over the upper reflector, and a metal film having a second opening for exposing the upper reflector disposed inside of the first opening and extending over the compound semiconductor layer, wherein the metal film and the compound semiconductor layer constitute a complex refractive index distribution structure where a complex refractive index is changed from the center of the second opening towards the outside. A method of emitting laser light in a single-peak transverse mode is also provided.
    Type: Grant
    Filed: June 19, 2018
    Date of Patent: March 3, 2020
    Assignee: Sony Corporation
    Inventors: Yoshiaki Watanabe, Hironobu Narui, Yuichi Kuromizu, Yoshinori Yamauchi, Yoshiyuki Tanaka
  • Patent number: 10574031
    Abstract: A surface emitting laser may include an isolation layer including a first center portion and a first plurality of outer portions extending from the first center portion, and a metal layer including a second center portion and a second plurality of outer portions extending from the second center portion. The metal layer may be formed on the isolation layer such that a first outer portion, of the second plurality of outer portions, is formed over one of the first plurality of outer portions. The surface emitting laser may include a passivation layer including a plurality of openings. An opening may be formed over the first outer portion. The surface emitting laser may include a plurality of oxidation trenches. An oxidation trench may be positioned at least partially between the first outer portion and a second outer portion of the second plurality of outer portions.
    Type: Grant
    Filed: June 30, 2017
    Date of Patent: February 25, 2020
    Assignee: Lumentum Operations LLC
    Inventors: Ajit Vijay Barve, Albert Yuen
  • Patent number: 10564091
    Abstract: An optical sensing device includes a substrate; a first dielectric layer extending thereon; a plurality of pairs of opposite antennas patterned on the first layer; and a second dielectric layer that covers all of the antennas. Opposite antennas are, in each of the pairs, separated by a gap g, which, on average, is between 1 nm and 50 nm, as measured in a direction x parallel to a main plane of the substrate. The pairs of antennas have different geometries. The second layer covers all the antennas and defines an electro-magnetic field enhancement volume between the opposite antennas of each of the pairs, thanks to the gap. Electro-magnetic radiation can be concentrated in each volume, making it possible to optically sense an analyte via opposite antennas of each of the pairs. Such a device allows analytes to be funneled and guided into the field-enhanced volumes for deterministic sensing.
    Type: Grant
    Filed: August 19, 2017
    Date of Patent: February 18, 2020
    Assignee: International Business Machines Corporation
    Inventors: Cynthia Gruber, Lars Herrmann, Emanuel Marc Lörtscher, Bruno Michel, Lukas Novotny
  • Patent number: 10535976
    Abstract: A vertical-cavity surface-emitting laser (VCSEL) device includes a first distributed Bragg reflector (DBR) structure of a first conductivity type, and a second DBR structure of a second conductivity type. The second conductivity type is different than the first conductivity type. The VCSEL includes a cavity positioned between the first DBR structure and the second DBR structure. The cavity includes at least one quantum well structure to generate light. The VCSEL includes a first thermal buffer layer positioned between the cavity and the first DBR structure, and a second thermal buffer positioned between the cavity and the second DBR structure.
    Type: Grant
    Filed: July 25, 2018
    Date of Patent: January 14, 2020
    Assignee: Avago Technologies International Sales Pte. Limited
    Inventors: Ramana M. V. Murty, Tak Kui Wang
  • Patent number: 10516249
    Abstract: To provide a laser oscillator, in which an LD module is fixed to a cooling plate through insulated fixation that is superior in durability, cost, and workability in an insulated fixation operation. A laser oscillator includes an LD module. The LD module has one or a plurality of LD light source(s), and is placed on a thermally conductive insulating member placed on a cooling plate. The LD module of the laser oscillator is fixed to the cooling plate, via an elastic insulating member fixed to the cooling plate.
    Type: Grant
    Filed: March 6, 2017
    Date of Patent: December 24, 2019
    Assignee: FANUC CORPORATION
    Inventor: Tetsuhisa Takazane
  • Patent number: 10516250
    Abstract: A near-infrared vertical-cavity surface-emitting laser is provided, which utilizes a conventional distributed Bragg reflector and a complex Bragg reflector which consists of a dielectric Bragg reflector and a reflective metal layer to construct a cavity. With the disposition of a confining layer, the light emitted from an active layer is confined in the cavity to resonate so as to emit a laser light. The thickness of the complex Bragg reflector is much thinner than that of the conventional distributed Bragg reflector, thereby lowering the cost of manufacture. In addition, with the transfer method, the laser is transferred to the substrate with high thermal conductivity to increase the heat dissipation efficiency. Therefore, the present invention can maintain operation while emitting a high-power laser.
    Type: Grant
    Filed: February 26, 2019
    Date of Patent: December 24, 2019
    Assignee: EPILEDS TECHNOLOGIES, INC.
    Inventors: Wen-Herng Su, Ming-Sen Hsu
  • Patent number: 10511143
    Abstract: Structures for integrated lasers, systems including integrated lasers, and associated fabrication methods. A ring waveguide and a seed region are arranged interior of the ring waveguide. A laser strip extends across a portion of the ring waveguide. The laser strip has an end contacting the seed region and another opposing end. The laser strip includes a laser medium and a p-n junction capable of generating electromagnetic radiation. The p-n junction of the laser strip is aligned with a portion of the ring waveguide.
    Type: Grant
    Filed: August 31, 2017
    Date of Patent: December 17, 2019
    Assignee: GLOBALFOUNDRIES INC.
    Inventors: John J. Ellis-Monaghan, Sebastian Ventrone, Vibhor Jain, Yves Ngu
  • Patent number: 10483435
    Abstract: A semiconductor light emitting device includes a conductive substrate and a first metal layer disposed on the substrate. The first metal layer is formed so as to be electrically connected with the substrate, and the first metal layer includes an Au based material. A joining layer is formed on the first metal layer. The joining layer includes a second metal layer including Au and a third metal layer including Au. A metallic contact layer and an insulating layer are formed on the joining layer. A semiconductor layer is formed on the metallic contact layer and the insulating layer and includes a red-based light emitting layer. An electrode is formed on the semiconductor layer and is made of metal. The insulating layer includes a patterned aperture, and at least a part of the metallic contact layer is formed in the aperture.
    Type: Grant
    Filed: June 22, 2018
    Date of Patent: November 19, 2019
    Assignee: ROHM CO., LTD.
    Inventors: Masakazu Takao, Mitsuhiko Sakai, Kazuhiko Senda
  • Patent number: 10396527
    Abstract: A vertical-cavity surface-emitting laser (VSCEL) and method for producing a VCSEL are described, the VCSEL including an undercut active region. The active region of the VCSEL is undercut relative to current-spreading layers of the VCSEL, such that a width of a tunnel junction of the VCSEL overgrown by a current spreading layer is less than a width of an active region of the VCSEL, and a width of the active region of the VCSEL is less than a width of the overgrown current-spreading layer, such that the VCSEL including the undercut active region is configured to transmit data at speeds greater than 25 gigabits/second.
    Type: Grant
    Filed: June 14, 2017
    Date of Patent: August 27, 2019
    Assignee: Mellanox Technologies, Ltd.
    Inventors: Alexei Sirbu, Vladimir Iakovlev, Yuri Berk, Itshak Kalifa, Elad Mentovich, Sylvie Rockman
  • Patent number: 10389085
    Abstract: Shown is a method of manufacturing a light emitting device capable of efficiently heating a device at the time of DPP annealing and suppressing heat generation of the device at the time of driving. In the method of manufacturing the light emitting device, a first p-type electrode is formed on a low-concentration portion having a low p-type dopant concentration formed under a first region of the p-type semiconductor portion, a second p-type electrode is formed on a high-concentration portion having a high p-type dopant concentration formed under a second region of the p-type semiconductor portion, and a predetermined forward bias voltage is applied between the first p-type electrode and a first n-type electrode formed on an n-type semiconductor portion at the time of DPP annealing.
    Type: Grant
    Filed: September 3, 2018
    Date of Patent: August 20, 2019
    Assignee: Sodick Co., Ltd.
    Inventor: Yuki Tsuda
  • Patent number: 10386489
    Abstract: A light beam steering transmissive element with an arbitrarily sized aperture comprising at least one layer of a insulating matrix modified for increased polarizability under electrical, magnetic or optical stimulation, between two or more substrates that can be electrically configured to provide signal modulation (optical, magnetic or electrical) that will control the wavefronts of incident light, thereby taking off-axis electromagnetic signals and aligning them to the aperture of a receiving element positioned near the device, or the reverse, sending signals originating behind the steering device to a variety of user-defined angles in two or more dimensions.
    Type: Grant
    Filed: February 1, 2017
    Date of Patent: August 20, 2019
    Inventors: Jeffrey Albelo, Joseph LaChapelle
  • Patent number: 10389088
    Abstract: In a semiconductor light emitting element provided with an active layer 4, a pair of cladding layers 2, 7 between which the active layer 4 is interposed, and a phase modulation layer 6 optically coupled to the active layer 4, the phase modulation layer 6 includes a base layer 6A and a plurality of different refractive index regions 6B having different refractive indices from the base layer 6A. When an XYZ orthogonal coordinate system having a thickness direction of the phase modulation layer 6 as a Z-axis direction is set and a square lattice of a virtual lattice constant a is set in an XY plane, each of the different refractive index regions 6B is disposed so that a centroid position G thereof is shifted from a lattice point position in a virtual square lattice by a distance r, and the distance r is 0<r?0.3a.
    Type: Grant
    Filed: March 11, 2016
    Date of Patent: August 20, 2019
    Assignee: HAMAMATSU PHOTONICS K.K.
    Inventors: Yoshitaka Kurosaka, Yuu Takiguchi, Takahiro Sugiyama, Kazuyoshi Hirose, Yoshiro Nomoto
  • Patent number: 10388819
    Abstract: A receiver unit having an optically operated voltage source, the voltage source including a first stack having an upper side and an underside and being formed on an upper side of a non-Si substrate based on III-V semiconductor layers arranged in the shape of a stack, and having a second electrical terminal contact on the upper side of the first stack and a first electrical terminal contact on an underside of the non-Si substrate, a voltage generated with the aid of the incidence of light onto the upper side of the first stack being present between the two terminal contacts, and including a second stack having a MOS transistor structure having III-V semiconductor layers and including a control terminal and a drain terminal and a source terminal. The MOS transistor structure being designed as a depletion field effect transistor.
    Type: Grant
    Filed: August 16, 2018
    Date of Patent: August 20, 2019
    Assignee: AZUR SPACE SOLAR POWER GMBH
    Inventors: Daniel Fuhrmann, Thomas Lauermann, Gregor Keller
  • Patent number: 10374391
    Abstract: A non-planarized VCSEL can include: a blocking region over or under an active region, the blocking region having a first thickness; one or more conductive channel cores in the blocking region, the one or more conductive channel cores having a second thickness that is larger than the first thickness, wherein the blocking region is defined by having an implant and the one or more conductive channel cores are devoid of the implant, wherein the blocking region is lateral the one or more conductive channel cores, the blocking region and one or more conductive channel cores being an isolation region; and a non-planarized semiconductor region of one or more non-planarized semiconductor layers over the isolation region. The VCSEL can include a planarized bottom mirror region below the active region and a non-planarized top mirror region above the isolation region, or a non-planarized bottom mirror region below the active region.
    Type: Grant
    Filed: September 28, 2017
    Date of Patent: August 6, 2019
    Assignee: FINISAR CORPORATION
    Inventors: Luke A. Graham, Sonia Quadery, Deepa Gazula, Haiquan Yang
  • Patent number: 10361341
    Abstract: A red-light emitting diode includes an n-doped portion, a p-doped portion, and a light emitting region located between the n-doped portion and a p-doped portion. The light emitting region includes a light-emitting indium gallium nitride layer emitting light at a peak wavelength between 600 and 750 nm under electrical bias thereacross, an aluminum gallium nitride layer located on the light-emitting indium gallium nitride layer and a GaN barrier layer located on the aluminum gallium nitride layer.
    Type: Grant
    Filed: October 18, 2017
    Date of Patent: July 23, 2019
    Assignee: GLO AB
    Inventors: Fariba Danesh, Richard P. Schneider, Jr., Fan Ren, Michael Jansen, Nathan Gardner
  • Patent number: 10331057
    Abstract: A light emitting element device includes: a light emitting thyristor having a layered structure including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type different from the first conductivity type, a third semiconductor layer of the first conductivity type, and a fourth semiconductor layer of the second conductivity type that are layered in this order; and a gate electrode for supplying gate current to the light emitting thyristor. The light emitting thyristor includes an etching stop layer disposed on a surface of the third semiconductor layer or included in the third semiconductor layer, the etching stop layer being a semiconductor layer having an etching rate lower than an etching rate of a semiconductor layer adjacent to the etching stop layer.
    Type: Grant
    Filed: January 27, 2017
    Date of Patent: June 25, 2019
    Assignee: Oki Data Corporation
    Inventors: Hironori Furuta, Genichiro Matsuo, Shinya Jumonji
  • Patent number: 10305249
    Abstract: In a laser apparatus, transmission of vibration, which is generated in a portion that generates a cooling gas flow, to a laser unit is suppressed, and heat generated from the laser unit is efficiently dissipated. A laser unit is housed inside a box-shaped housing having a plurality of faces. A frame supports a laser unit with a first mount interposed therebetween inside the housing. The frame has a through-hole penetrating from one face side to the other face side. A blower fan generates a flow of cooling gas for cooling the laser unit. The blower fan is attached to, for example, a second housing so as to face the laser unit. The cooling gas moves through the through-hole of the frame between the blower fan and the laser unit.
    Type: Grant
    Filed: July 24, 2018
    Date of Patent: May 28, 2019
    Assignee: FUJIFILM Corporation
    Inventors: Kaku Irisawa, Tomoki Inoue, Atsushi Hashimoto
  • Patent number: 10297975
    Abstract: The purpose of the present invention is to provide a laser light source module that is capable of heat dissipation from a laser device and of suppressing the diffusion of a light beam due to the close arrangement of the laser device. The laser light source module comprises a stem that is a base plate and first and second laser assemblies disposed on the stem. Each of the laser assemblies comprises a multi-emitter LD bar that is a laser device emitting a laser light along an optical axis, and a holding member having a mounting surface parallel to the axis, the multi-emitter LD bar being mounted on the mounting surface. The first and second laser assemblies are positioned such that the optical axes of the assemblies are parallel to each other and that the mounting surfaces of the assemblies are arranged opposite to each other in parallel.
    Type: Grant
    Filed: October 27, 2015
    Date of Patent: May 21, 2019
    Assignee: MITSUBISHI ELECTRIC CORPORATION
    Inventors: Daisuke Morita, Kazutaka Ikeda, Motoaki Tamaya
  • Patent number: 10290995
    Abstract: A terahertz quantum cascade laser device includes a substrate, q semiconductor stacked body and a first electrode. The semiconductor stacked body includes an active layer and a first clad layer. The active layer is provided on the substrate and is configured to emit infrared laser light by an intersubband optical transition. The first clad layer is provided on the active layer. A ridge waveguide is provided in the semiconductor stacked body. A first distributed feedback region and a second distributed feedback region are provided at an upper surface of the first clad layer to be separated from each other along an extension direction of the ridge waveguide. The first electrode is provided at the upper surface of the first clad layer. A planar size of the first distributed feedback region is smaller than a planar size of the second distributed feedback region.
    Type: Grant
    Filed: September 1, 2017
    Date of Patent: May 14, 2019
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Tsutomu Kakuno, Shinji Saito, Osamu Yamane
  • Patent number: 10270225
    Abstract: A semiconductor laser arrangement and a projector are disclosed. In an embodiment the semiconductor laser arrangement includes at least two electrically pumped active zones, each active zone configured to emit laser radiation of a different emission wavelength and a semiconductor-based waveguide structure, wherein the active zones are electrically independently operable of one another, wherein the active zones optically follow directly one another along a beam direction and are arranged in a descending manner with regard to their emission wavelengths, wherein at least in a region of a last active zone along the beam direction, a laser radiation of all active zones jointly runs through the waveguide structure, wherein at least the last active zone comprises a plurality of waveguides which are stacked one above the other and are oriented parallel to one another, wherein one of the waveguides is configured for the radiation emitted by the last active zone.
    Type: Grant
    Filed: November 2, 2016
    Date of Patent: April 23, 2019
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Bernhard Stojetz, Alfred Lell, Christoph Eichler, Andreas Löffler, André Somers
  • Patent number: 10249777
    Abstract: An infrared light-emitting diode includes, from up to bottom, a P-type ohmic electrode, a contact layer, a P-type cladding layer, an active layer, an N-type cladding layer, a buffer layer, a GaAs substrate and an N-type ohmic electrode. The N-type cladding layer and the P-type cladding layer or either of them is InxGa1-xAs. The cladding layer of InxGa1-xAs, due to low resistance, can improve current expansion, reduce voltage and improve light-emitting efficiency.
    Type: Grant
    Filed: January 15, 2018
    Date of Patent: April 2, 2019
    Assignee: XIAMEN SAN'AN OPTOELECTRONICS CO., LTD.
    Inventors: Chun Kai Huang, Chun-Yi Wu, Duxiang Wang, Chaoyu Wu, Jin Wang
  • Patent number: 10229887
    Abstract: Discussed generally herein are methods and devices including or providing an electromagnetic interference (EMI) shielding. A device can include substrate including electrical connection circuitry therein, ground circuitry on, or at least partially in the substrate, the ground circuitry at least partially exposed by a surface of the substrate, a die electrically connected to the connection circuitry and the ground circuitry, the die on the substrate, a conductive material on a die backside, and a conductive paste or one or more wires electrically connected to the ground circuitry and the conductive material.
    Type: Grant
    Filed: March 31, 2016
    Date of Patent: March 12, 2019
    Assignee: Intel Corporation
    Inventors: Rajendra C. Dias, Mitul B. Modi
  • Patent number: 10211060
    Abstract: A number of variations may include a method that may include depositing a first layer on a first semiconductor layer in an overlying position with respect to at least one trench structure formed in the first semiconductor epi layer. The first layer may include a first metal and a second metal. A second layer may comprise a material constructed and arranged to scavenge semiconductor material migrating from the first semiconductor layer during annealing may be deposited over the first layer. The first semiconductor layer may be subjected to at least a first annealing act to provide a first structure. At least a portion of the first structure may be stripped to remove any of the first layer not reacted with the semiconductor material to form a Schottky barrier structure during the first annealing act.
    Type: Grant
    Filed: November 22, 2016
    Date of Patent: February 19, 2019
    Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventors: Michael Thomason, Mohammed Tanvir Quddus, James Morgan, Mihir Mudholkar, Scott Donaldson, Gordon M. Grivna
  • Patent number: 10164146
    Abstract: A light emitting device includes a p-side heterostructure having a short period superlattice (SPSL) formed of alternating layers of AlxhighGa1-xhighN doped with a p-type dopant and AlxlowGa1-xlowN doped with the p-type dopant, where xlow?xhigh?0.9. Each layer of the SPSL has a thickness of less than or equal to about six bi-layers of AlGaN.
    Type: Grant
    Filed: July 13, 2016
    Date of Patent: December 25, 2018
    Assignee: Palo Alto Research Center Incorporated
    Inventors: John E. Northrup, Bowen Cheng, Christopher L. Chua, Thomas Wunderer, Noble M. Johnson, Zhihong Yang
  • Patent number: 10157898
    Abstract: A light emitter, comprising a monolithic n-type layer (comprising at least first and second n-type regions), a monolithic p-type layer (comprising at least first and second p-type regions), at least a first isolation region and at least a first electrically conductive via that extends through at least part of the first isolation region. At least part of the first isolation region is between the first n-type region and the second n-type region, and/or least part of the first isolation region is between the first p-type region and the second p-type region.
    Type: Grant
    Filed: March 21, 2017
    Date of Patent: December 18, 2018
    Assignee: Cree, Inc.
    Inventors: Gerald H. Negley, Antony Paul Van De Ven
  • Patent number: 10148365
    Abstract: A communication interface apparatus can include a free-air optical transceiver for communicating signals at a first speed and an electrical contact for communicating at least one of: signals at a second speed or power. The communication interface can include a substrate having a plurality of electrical circuits. The optical transceiver can be electrically coupled to the substrate and configured to transceive an optical signal in free air. In an example, the optical transceiver can convert the optical signal to the signal at the first speed, such as an electrical signal. In an example, the electrical contact can be communicatively coupled to the substrate. The electrical contact and the free-air optical transceiver can be attached to the substrate in fixed relation with respect to one another.
    Type: Grant
    Filed: March 31, 2017
    Date of Patent: December 4, 2018
    Assignee: Intel Corporation
    Inventor: Arvind Sundaram
  • Patent number: 10122152
    Abstract: A vertical-cavity surface-emitting Laser (VCSEL) has a three-trench structure. By forming a first trench within a mesa around the periphery of an output window of the VCSEL, the overall capacitance is decreased and the time used in the oxidation process for an oxidation layer is shortened. By forming a second trench and a third trench on the periphery of the mesa in a step-like concave manner, the mesa becomes a step-like structure having double mesa-layers. Such that, a larger heat-radiating area can be obtained for decreasing thermal effects, while the metal-gap defects of the metal layer can also be avoided. The implant layer is formed around the periphery of the output window for controlling the optical mode and confining the current path. In addition, an output layer is formed on the output window for controlling the output light.
    Type: Grant
    Filed: February 15, 2018
    Date of Patent: November 6, 2018
    Assignee: TrueLight Corporation
    Inventors: Bing-Cheng Lin, Chih Cheng Chen, Hung-Wei Tseng
  • Patent number: 10108079
    Abstract: The present invention is directed to a laser light source for a vehicle.
    Type: Grant
    Filed: October 27, 2017
    Date of Patent: October 23, 2018
    Assignee: Soraa Laser Diode, Inc.
    Inventors: James W. Raring, Paul Rudy
  • Patent number: 10097031
    Abstract: A charging device to wirelessly charge a target device, including: a coil antenna having a first surface facing a first direction at which the target device is placed for charging and a second surface facing an opposite direction from the first direction, generating a first magnetic field; a plurality of pairs of metallic small loop transmission coils arranged to the second surface side of the coil antenna, to generate a second magnetic field in response to the first magnetic field to enhance the first magnetic field, the first and second magnetic fields being directed in the first direction; and wherein a first one of each pair of metallic small loop transmission coils is coupled to a second one of the pair in parallel and a size of the first one of each pair is different from that of the second one of the pair, such that when a distance between the target device and the first surface is changed, one of the pair of metallic small loop transmission coils is enabled to be resonant with the coil antenna.
    Type: Grant
    Filed: September 20, 2016
    Date of Patent: October 9, 2018
    Assignee: HONG KONG APPLIED SCIENCE AND TECHNOLOGY RESEARCH INSITTUTE COMPANY LIMITED
    Inventors: Yan Liu, Jun Chen
  • Patent number: 10096746
    Abstract: A semiconductor element includes a super-lattice buffer layer including AlxN1-x layers and AlyO1-y layers (0<x<1, 0<y<1). The super-lattice buffer layer can mitigate corrosion to the side wall by chemical solution during chip fabrication, and improve chip yield. Fabrication the super-lattice buffer layer to achieve the effects can be realized, for example, using chemical vapor deposition (CVD).
    Type: Grant
    Filed: May 27, 2017
    Date of Patent: October 9, 2018
    Assignee: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Sheng-wei Chou, Chang-cheng Chuo, Chan-chan Ling, Chia-hung Chang
  • Patent number: 10084282
    Abstract: A broad area quantum cascade laser subject to having high order transverse optical modes during operation includes a laser cavity at least partially enclosed by walls, and a perturbation in the laser cavity extending from one or more of the walls. The perturbation may have a shape and a size sufficient to suppress high order transverse optical modes during operation of the broad area quantum cascade laser, whereby a fundamental transverse optical mode is selected over the high order transverse optical modes. As a result, the fundamental transverse mode operation in broad-area quantum cascade lasers can be regained, when it could not otherwise be without such a perturbation.
    Type: Grant
    Filed: August 14, 2017
    Date of Patent: September 25, 2018
    Assignee: THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE AIR FORCE
    Inventors: Ron Kaspi, Chi Yang
  • Patent number: 10032961
    Abstract: A semiconductor light emitting device includes a conductive substrate and a first metal layer disposed on the substrate. The first metal layer is formed so as to be electrically connected with the substrate, and the first metal layer includes an Au based material. A joining layer is formed on the first metal layer. The joining layer includes a second metal layer including Au and a third metal layer including Au. A metallic contact layer and an insulating layer are formed on the joining layer. A semiconductor layer is formed on the metallic contact layer and the insulating layer and includes a red-based light emitting layer. An electrode is formed on the semiconductor layer and is made of metal. The insulating layer includes a patterned aperture, and at least a part of the metallic contact layer is formed in the aperture.
    Type: Grant
    Filed: September 26, 2017
    Date of Patent: July 24, 2018
    Assignee: ROHM CO., LTD.
    Inventors: Masakazu Takao, Mitsuhiko Sakai, Kazuhiko Senda
  • Patent number: 10025051
    Abstract: A surface light emitting semiconductor laser element, comprises a substrate, a lower reflector including a semiconductor multi-layer disposed on the substrate, an active layer disposed on the lower reflector, an upper reflector including a semiconductor multi-layer disposed on the active layer, a compound semiconductor layer having a first opening for exposing the upper reflector and extending over the upper reflector, and a metal film having a second opening for exposing the upper reflector disposed inside of the first opening and extending over the compound semiconductor layer, wherein the metal film and the compound semiconductor layer constitute a complex refractive index distribution structure where a complex refractive index is changed from the center of the second opening towards the outside. A method of emitting laser light in a single-peak transverse mode is also provided.
    Type: Grant
    Filed: November 3, 2017
    Date of Patent: July 17, 2018
    Assignee: Sony Corporation
    Inventors: Yoshiaki Watanabe, Hironobu Narui, Yuichi Kuromizu, Yoshinori Yamauchi, Yoshiyuki Tanaka
  • Patent number: 9985253
    Abstract: A method of manufacturing a light scattering layer and an organic light-emitting diode are provided. The manufacturing method includes: depositing a material having a low refractive index value in hole structures of a mask on a base; removing the mask, and forming a plurality of raised structures on the base; depositing a material having a high refractive index value between the raised structures to form a planarization layer, thereby manufacturing a light scattering layer constituted by the raised structures and the planarization layer on the base. The manufacturing method has the advantages of being simple to prepare, low-cost, etc.
    Type: Grant
    Filed: April 27, 2016
    Date of Patent: May 29, 2018
    Assignee: WUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Zhiyong Wu, Liang Xu
  • Patent number: 9972968
    Abstract: Methods of passivating at least one facet of a multilayer waveguide structure can include: cleaning, in a first chamber of a multi-chamber ultra-high vacuum (UHV) system, a first facet of the multilayer waveguide structure; transferring the cleaned multilayer waveguide structure from the first chamber to a second chamber of the multi-chamber UHV system; forming, in the second chamber, a first single crystalline passivation layer on the first facet; transferring the multilayer waveguide structure from the second chamber to a third chamber of the multi-chamber UHV system; and forming, in the third chamber, a first dielectric coating on the first single crystalline passivation layer, in which the methods are performed in an UHV environment of the multi-chamber UHV system without removing the multilayer waveguide structure from the UHV environment.
    Type: Grant
    Filed: April 20, 2016
    Date of Patent: May 15, 2018
    Assignee: Trumpf Photonics, Inc.
    Inventors: Qiang Zhang, Haiyan An, Hans Georg Treusch
  • Patent number: 9939665
    Abstract: A communication apparatus includes an optical fiber along which radiation can be transmitted; an optical fiber grating formed within the optical fiber, the optical fiber grating having a structure, and configured to reflect radiation at a particular wavelength; and an instrument coupled to the grating and configured to controllably modify the structure of the grating, thereby changing the wavelength at which the grating reflects radiation. A communication system including the communication apparatus is also described, along with a method of communicating a signal.
    Type: Grant
    Filed: October 28, 2016
    Date of Patent: April 10, 2018
    Assignee: Airbus Operations Limited
    Inventors: Kayvon Barad, Chris Wood, Alessio Cipullo
  • Patent number: RE46996
    Abstract: A method of manufacturing a laser diode array capable of inhibiting electric cross talk is provided. The method of manufacturing a laser diode array includes a processing step of forming a peel layer containing an oxidizable material and a vertical resonator structure over a first substrate sequentially from the first substrate side by crystal growth, and then selectively etching the peel layer and the vertical resonator structure to the first substrate, thereby processing into a columnar shape, a peeling step of oxidizing the peel layer from a side face, and then peeling the vertical resonator structure of columnar shape from the first substrate, and a rearrangement step of jointing a plurality of vertical resonator structures of columnar shape obtained by the peeling step to a surface of a metal layer of a second substrate formed with the metal layer on the surface.
    Type: Grant
    Filed: June 27, 2016
    Date of Patent: August 14, 2018
    Assignee: Sony Corporation
    Inventors: Osamu Maeda, Masaki Shiozaki, Takahiro Arakida