Semiconductor Patents (Class 372/43.01)
  • Patent number: 11119384
    Abstract: Disclosed are methods and apparatus for hermetically sealing a nonlinear optical (NLO) crystal for use in a laser system. A mounted NLO crystal, an enclosure base, a lid, and a plurality of window components are moved into an oven. A vacuum bake process is then performed on the mounted NLO crystal, enclosure base, lid, and plurality of window components until a humidity level that is less than a predefined amount is reached. The mounted NLO crystal, enclosure base, lid, and plurality of window components are moved from the oven onto a stage of a glove box that includes a sealing tool. In the glove box, the mounted NLO crystal is hermetically sealed into the enclosure base by sealing the lid and plurality of window components into openings of the enclosure base.
    Type: Grant
    Filed: September 17, 2018
    Date of Patent: September 14, 2021
    Assignee: KLA-Tencor Corporation
    Inventors: Rajeev Patil, David Ramirez, Yevgeniy Churin, William Replogle
  • Patent number: 11112069
    Abstract: A light emitting device includes a base; a plurality of semiconductor laser elements disposed on the base and configured to emit light laterally from the plurality of semiconductor laser elements; a reflecting member disposed on the base and configured to reflect light from the semiconductor laser elements; a surrounding part disposed on the base and surrounding the semiconductor laser elements and the reflecting member; a wiring part disposed on the base so as to extend to a location outside of the surrounding part; a radiating body disposed on the surrounding part and having an opening; and a wavelength converting member that is located in the opening of the radiating body, the wavelength converting member being configured to convert a wavelength of light that is emitted from the plurality of semiconductor laser elements and reflected upward by the reflecting member.
    Type: Grant
    Filed: January 29, 2020
    Date of Patent: September 7, 2021
    Assignee: Nichia Corporation
    Inventors: Kazuma Kozuru, Shinichi Nagahama
  • Patent number: 11105861
    Abstract: Disclosed is a battery resistance estimation apparatus.
    Type: Grant
    Filed: November 15, 2018
    Date of Patent: August 31, 2021
    Assignee: LG Chem, Ltd.
    Inventor: Bo-Kyung Seo
  • Patent number: 11050219
    Abstract: A laser device has a photonic crystal surface emitting laser (PCSEL) element. At a first lateral side of the PCSEL element, a reflector is arranged to reflect back into the PCSEL element at least a portion of light travelling out of the PCSEL element through the first lateral side of the PCSEL element. Between the first lateral side of the PCSEL element and the reflector there is interposed an electrically controllable light-transmission region configured to control the transmission of light from the PCSEL element to the reflector, based on an electrical input. Also disclosed is a method of operation of a corresponding laser device.
    Type: Grant
    Filed: May 5, 2017
    Date of Patent: June 29, 2021
    Assignee: The University Court of the University of Glasgow
    Inventors: Richard Hogg, David Childs, Richard Taylor
  • Patent number: 11018013
    Abstract: A semiconductor device manufacturing method includes: forming an electrode including an Ni layer and an Au layer successively stacked on a semiconductor layer; forming a Ni oxide film by performing heat treatment to the electrode at a temperature of 350° C. or more to deposit Ni at least at a part of a surface of the Au layer and to oxidize the deposited Ni; and forming an insulating film in contact with the Ni oxide film and containing Si.
    Type: Grant
    Filed: June 10, 2019
    Date of Patent: May 25, 2021
    Assignee: SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
    Inventor: Yukinori Nose
  • Patent number: 11016378
    Abstract: The present invention is directed to a laser light source.
    Type: Grant
    Filed: September 24, 2018
    Date of Patent: May 25, 2021
    Assignee: KYOCERA SLD Laser, Inc.
    Inventors: James W. Raring, Paul Rudy
  • Patent number: 11005005
    Abstract: An optoelectronic semiconductor device and a method for manufacturing an optoelectronic semiconductor device are disclosed. In an embodiment an optoelectronic semiconductor device includes a semiconductor body comprising a first region of a first conductive type, an active region, a second region of a second conductive type and a coupling-out surface, wherein the first region, the active region and the second region are arranged along a stacking direction, wherein the active region extends from a rear surface opposite the coupling-out surface to the coupling-out surface along a longitudinal direction transverse to or perpendicular to the stacking direction, wherein the coupling-out surface is arranged plane-parallel to the rear surface, and wherein the coupling-out surface and the rear surface of the semiconductor body are produced by an etching process.
    Type: Grant
    Filed: May 10, 2019
    Date of Patent: May 11, 2021
    Assignee: OSRAM OLED GMBH
    Inventors: Harald König, Jens Ebbecke, Alfred Lell, Sven Gerhard, Clemens Vierheilig
  • Patent number: 10998246
    Abstract: Reliability of a semiconductor device is improved. A method of manufacturing a semiconductor device includes a step of preparing a lead frame in which a plurality of device forming regions are arranged in a matrix, a die bonding step of mounting a semiconductor chip on each device region, a resin sealing step of individually covering each semiconductor chip with a sealing body, and a lead plating step of plating an outer portion of a lead exposed from the sealing body. Between the resin sealing step and the lead plating step, an inspection step for detecting defective products in the resin sealing step and a defective product removal step for removing a device region of defective products are provided.
    Type: Grant
    Filed: April 15, 2019
    Date of Patent: May 4, 2021
    Assignee: RENESAS ELECTRONICS CORPORATION
    Inventor: Noriaki Mineta
  • Patent number: 10985529
    Abstract: A semiconductor laser diode includes a semiconductor layer sequence with an active layer having a main extension plane and that generates light in an active region and emits light via a light outcoupling surface during operation, wherein the active region extends from a rear surface opposite the light outcoupling surface to the light outcoupling surface along a longitudinal direction, the semiconductor layer sequence includes a trench structure having at least one trench or a plurality of trenches on at least one side laterally next to the active region, and each trench of the trench structure extends in a longitudinal direction and projects from a top side of the semiconductor layer sequence in a vertical direction into the semiconductor layer sequence, and the trench structure varies in a lateral and/or vertical and/or longitudinal direction with respect to properties of the at least one trench or the plurality of trenches.
    Type: Grant
    Filed: July 12, 2017
    Date of Patent: April 20, 2021
    Assignee: OSRAM OLED GmbH
    Inventors: Sven Gerhard, Christoph Eichler, Alfred Lell, Bernhard Stojetz
  • Patent number: 10971897
    Abstract: A semiconductor laser device includes: a first conductivity side semiconductor layer, an active layer; and a second conductivity side semiconductor layer. The second conductivity side semiconductor layer includes a first semiconductor layer and a second semiconductor layer, the first semiconductor layer being closer to the active layer than the second semiconductor layer is. The second semiconductor layer defines a width of a current injection region for injecting current into an optical waveguide. The current injection region includes a width varying region in which a width varies. S1>S2, where S1 denotes a width of the width varying region on a front end face side, and S2 denotes a width of the width varying region on a rear end face side.
    Type: Grant
    Filed: December 27, 2018
    Date of Patent: April 6, 2021
    Assignee: PANASONIC SEMICONDUCTOR SOLUTIONS CO., LTD.
    Inventors: Norio Ikedo, Tougo Nakatani, Takahiro Okaguchi, Takeshi Yokoyama, Tomohito Yabushita, Toru Takayama
  • Patent number: 10938181
    Abstract: A vertical cavity surface emitting laser includes: an active layer including a quantum well structure including one or more well layers including a III-V compound semiconductor containing indium as a group III constituent element; an upper laminated region containing a carbon dopant; and a substrate for mounting a post including the active layer and the upper laminated region, in which the active layer is provided between the upper laminated region and the substrate, the quantum well structure has a carbon concentration of 2×1016 cm?3 or less, and the upper laminated region includes a pile-up layer of indium at a position away from the active layer.
    Type: Grant
    Filed: August 29, 2019
    Date of Patent: March 2, 2021
    Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventors: Kei Fujii, Takamichi Sumitomo, Suguru Arikata
  • Patent number: 10923883
    Abstract: An optical device includes a rectangular parallelepiped prism including a reflection-transmission surface for reflecting and transmitting light fluxes, a seating surface provided so that a bottom surface of the prism is fixed by an adhesive, and a groove portion provided in a part of the periphery of the seating surface. When the prism is fixed to the seating surface by the adhesive, the groove portion is configured to be capable of receiving the adhesive protruded from between the bottom surface of the prism and the seating surface when the prism is pressed against a first positioning member for determining a position of the prism so that a first side face of the prism is along a predetermined straight line and against a second positioning member for restricting a second side face orthogonal to the first side face of the prism from moving in the direction of the straight line.
    Type: Grant
    Filed: June 16, 2017
    Date of Patent: February 16, 2021
    Assignee: Ricoh Company, Ltd.
    Inventors: Tokiko Gotoh, Noboru Kusunose
  • Patent number: 10866343
    Abstract: An object to provide a photonic crystal capable of resonating light at more resonant frequencies within a particular frequency range. A plurality of photonic crystal structure formation bodies each including a plate-like member in which cyclic refractive index distribution is formed are provided so as to be spaced apart from each other in the thickness direction of the plate-like member, and the respective refractive index distributions of the plurality of photonic crystal structure formation bodies are set such that: at least one of the plurality of photonic crystal structure formation bodies resonates with light having at least two frequencies within the frequency range; and the two frequencies are different from resonant frequencies of at least one of the other photonic crystal structure formation bodies.
    Type: Grant
    Filed: April 15, 2014
    Date of Patent: December 15, 2020
    Assignee: JAPAN SCIENCE AND TECHNOLOGY AGENCY
    Inventors: Susumu Noda, Ardavan Oskooi, Yoshinori Tanaka
  • Patent number: 10855056
    Abstract: A number of beams that can be coupled into an optical fiber can be increased using emitted beams having greater divergence, thus providing increased beam power. Alternatively, with a fixed number of emitters, total optical power can be maintained with fewer beams in an output beam with a smaller numerical aperture.
    Type: Grant
    Filed: January 10, 2018
    Date of Patent: December 1, 2020
    Assignee: nLIGHT, Inc.
    Inventors: Zhigang Chen, David Martin Hemenway, Manoj Kanskar
  • Patent number: 10833474
    Abstract: Laser diode submounts include a SiC substrate on which a thick conductive layer is supplied to use in mounting a laser diode. The thick conductive layer is typically gold or copper, and can be electrically coupled to a base laser that is used to define laser diode couplings.
    Type: Grant
    Filed: August 1, 2018
    Date of Patent: November 10, 2020
    Assignee: nLIGHT, Inc.
    Inventors: Manoj Kanskar, Zhigang Chen
  • Patent number: 10797197
    Abstract: A thin film, flexible optoelectronic device is described. In an aspect, a method for fabricating a single junction optoelectronic device includes forming a p-n structure on a substrate, the p-n structure including a semiconductor having a lattice constant that matches a lattice constant of substrate, the semiconductor including a dilute nitride, and the single-junction optoelectronic device including the p-n structure; and separating the single-junction optoelectronic device from the substrate. The dilute nitride includes one or more of GaInNAs, GaInNAsSb, alloys thereof, or derivatives thereof.
    Type: Grant
    Filed: June 18, 2018
    Date of Patent: October 6, 2020
    Assignee: ALTA DEVICES, INC.
    Inventors: Nikhil Jain, Brendan M. Kayes, Gang He
  • Patent number: 10784653
    Abstract: A laser bar includes a semiconductor layer including a plurality of layers and includes an active zone, wherein the active zone is arranged in an x-y-plane, laser diodes each form a mode space in an x-direction between two end faces, the mode spaces of the laser diodes are arranged alongside one another in a y-direction, a trench is provided in the semiconductor layer between two mode spaces, the trenches extend in the x-direction, and the trenches extend from a top side of the semiconductor layer in a z-direction to a predefined depth in the direction of the active zone.
    Type: Grant
    Filed: February 23, 2017
    Date of Patent: September 22, 2020
    Assignee: OSRAM OLED GmbH
    Inventors: Andreas Loeffler, Clemens Vierheilig, Sven Gerhard
  • Patent number: 10770866
    Abstract: A light emitting device includes a base defining a recess, a lid portion, first and second semiconductor laser elements, and a collimate lens. The lid portion covers the recess so that a hermetically sealed space is defined by the lid portion and the base, the lid portion having a bottom surface fixed to the base and a top surface opposite to the bottom surface. The first and second semiconductor laser elements are provided in the hermetically sealed space. The first and second semiconductor laser elements respectively irradiate first and second lights having first and second peak wavelengths in a visible range. The collimate lens is fixed on the top surface of the lid portion with an adhesive. The collimate lens has a plurality of lens portions including a first lens portion through which the first light passes, and a second lens portion through which the second light passes.
    Type: Grant
    Filed: August 20, 2019
    Date of Patent: September 8, 2020
    Assignee: NICHIA CORPORATION
    Inventors: Soichiro Miura, Kazuma Kozuru
  • Patent number: 10754222
    Abstract: A light steering apparatus is provided including a tunable laser source and a system including the light steering apparatus. The light steering apparatus includes the tunable laser source and a steering device. A plurality of laser beams having optical coherence with each other and output from the tunable laser source are incident onto the steering device, and the steering device includes a plurality of modulation units for beam steering.
    Type: Grant
    Filed: November 14, 2018
    Date of Patent: August 25, 2020
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Changgyun Shin, Dongjae Shin, Dongsik Shim, Changbum Lee
  • Patent number: 10707374
    Abstract: A method of forming a light emitting device includes forming a growth mask layer including openings on a doped compound semiconductor layer, forming first light emitting diode (LED) subpixels by forming a plurality of active regions and second conductivity type semiconductor material layers employing selective epitaxy processes, and transferring each first LED subpixel to a backplane. An anode contact electrode may be formed on the second conductivity type semiconductor material layers for redundancy. The doped compound semiconductor layer may be patterned with tapered sidewalls to enhance etendue. An optically clear encapsulation matrix may be formed on the doped compound semiconductor material layer to enhance etendue. Lift-off processes may be employed for the active regions. Cracking of the LEDs may be suppressed employing a thick reflector layer.
    Type: Grant
    Filed: September 6, 2018
    Date of Patent: July 7, 2020
    Assignee: GLO AB
    Inventors: Fariba Danesh, Benjamin Leung, Tsun Lau, Zulal Tezcan, Miao-Chan Tsai, Max Batres, Michael Joseph Cich
  • Patent number: 10707643
    Abstract: The purpose of the present invention is to provide a laser light source module that is capable of heat dissipation from a laser device and of suppressing the diffusion of a light beam due to the close arrangement of the laser device. The laser light source module comprises a stem that is a base plate and first and second laser assemblies disposed on the stem. Each of the laser assemblies comprises a multi-emitter LD bar that is a laser device emitting a laser light along an optical axis, and a holding member having a mounting surface parallel to the axis, the multi-emitter LD bar being mounted on the mounting surface. The first and second laser assemblies are positioned such that the optical axes of the assemblies are parallel to each other and that the mounting surfaces of the assemblies are arranged opposite to each other in parallel.
    Type: Grant
    Filed: April 4, 2019
    Date of Patent: July 7, 2020
    Assignee: MITSUBISHI ELECTRIC CORPORATION
    Inventors: Daisuke Morita, Kazutaka Ikeda, Motoaki Tamaya
  • Patent number: 10694931
    Abstract: An endoscope includes an optical transmission module configured to convert each of the image pickup signal and the test signal into an optical signal and output the optical signal, and a signal amplitude measuring section configured to add signal amplitude information to the image pickup signal and the test signal, and a video processor includes an optical reception module configured to receive the optical signals and convert each of the optical signals into an electric signal and output the electric signal, an information acquiring section configured to acquire transmission information on each of the optical signals, the transmission information including the signal amplitude information, a determination section configured to determine a state of transmission of the optical signal, and a power supply adjusting section configured to adjust the applied voltage for the optical transmission module according to a result of the determination and output the applied voltage.
    Type: Grant
    Filed: December 4, 2018
    Date of Patent: June 30, 2020
    Assignee: OLYMPUS CORPORATION
    Inventors: Tsutomu Urakawa, Susumu Kawata
  • Patent number: 10693035
    Abstract: A heterostructure for use in an electronic or optoelectronic device is provided. The heterostructure includes one or more semiconductor layers containing columnar nanostructures (e.g., nanowires). The nanowire semiconductor layer can include sub-layers of varying composition, at least one of which is an active layer that can include quantum wells and barriers. A heterostructure can include n-type and p-type semiconductor contact layers adjacent to the nanowire semiconductor layer containing the active layer.
    Type: Grant
    Filed: October 23, 2016
    Date of Patent: June 23, 2020
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Michael Shur, Grigory Simin, Alexander Dobrinsky
  • Patent number: 10686296
    Abstract: An optoelectronic component includes a layer structure including an active zone that generates electromagnetic radiation, wherein the active zone is arranged in a plane, the layer structure includes a top side and four side faces, the first and third side faces are arranged opposite one another, the second and fourth side faces are arranged opposite one another, a strip-type ridge structure is arranged on the top side of the layer structure, the ridge structure extends between the first side face and the third side face, the first side face constitutes an emission face for electromagnetic radiation, a first recess is introduced into the top side of the layer structure laterally alongside the ridge structure, a second recess is introduced into the first recess, and the second recess extends as far as the second side face.
    Type: Grant
    Filed: September 29, 2016
    Date of Patent: June 16, 2020
    Assignee: OSRAM OLED GmbH
    Inventors: Sven Gerhard, Alfred Lell, Clemens Vierheilig, Andreas Löffler
  • Patent number: 10644482
    Abstract: An etched planarized VCSEL includes: an active region; a blocking region over the active region, and defining apertures therein; and conductive channel cores in the apertures, wherein the conductive channel cores and blocking region form an isolation region. A method of making the VCSEL includes: forming the active region; forming the blocking region over the active region; etching the apertures in the blocking region; and forming the conductive channel cores in the apertures of the blocking region. Another etched planarized VCSEL includes: an active region; a conductive region over the active region, and defining apertures therein; and blocking cores in the apertures, wherein the blocking cores and conductive region form an isolation region. A method of making the VCSEL includes: forming the active region; forming the conductive region over the active region; etching the apertures in the conductive region; and forming the blocking cores in the apertures of the conductive region.
    Type: Grant
    Filed: March 12, 2019
    Date of Patent: May 5, 2020
    Assignee: Finisar Corporation
    Inventors: Luke Graham, Andy MacInnes
  • Patent number: 10630049
    Abstract: In various embodiments, passivation layers are deposited on internal surfaces of cooling channels defined within heat sinks for electronic devices such as laser beam emitters, the passivation layers retarding or substantially preventing erosion and/or corrosion of the heat sinks.
    Type: Grant
    Filed: October 17, 2017
    Date of Patent: April 21, 2020
    Assignee: TERADIODE, INC.
    Inventors: Robin Huang, Bien Chann, Parviz Tayebati
  • Patent number: 10622785
    Abstract: A vertical cavity surface emitting laser (VCSEL) composite assembly includes a VCSEL, a substrate spaced from the VCSEL, and at least one metal layer disposed between the VCSEL and the substrate to facilitate efficient thermal management of the assembly.
    Type: Grant
    Filed: January 29, 2016
    Date of Patent: April 14, 2020
    Assignee: UNIVERSITY OF SOUTHERN CALIFORNIA
    Inventors: Jongseung Yoon, Dongseok Kang
  • Patent number: 10622784
    Abstract: In various embodiments, laser apparatuses include thermal bonding layers between various components and sealing materials for preventing or retarding movement of thermal bonding material out of the thermal bonding layers.
    Type: Grant
    Filed: April 29, 2019
    Date of Patent: April 14, 2020
    Assignee: TERADIODE, INC.
    Inventors: Parviz Tayebati, Michael Deutsch
  • Patent number: 10586884
    Abstract: A multi-junction optoelectronic device and method of fabrication are disclosed. In an aspect, the method includes forming a first p-n structure on a substrate, the first p-n structure including a semiconductor having a lattice constant that matches a lattice constant of the substrate; forming one or more additional p-n structures on the first p-n structure, each of the one or more additional p-n structures including a semiconductor having a lattice constant that matches the lattice constant of the substrate, the semiconductor of a last of the one or more additional p-n structures that is formed including a dilute nitride, and the multi-junction optoelectronic device including the first p-n structure and the one or more additional p-n structures; and separating the multi-junction optoelectronic device from the substrate. In some implementations, it is possible to have the dilute nitride followed by a group IV p-n structure.
    Type: Grant
    Filed: June 18, 2018
    Date of Patent: March 10, 2020
    Assignee: ALTA DEVICES, INC.
    Inventors: Nikhil Jain, Brendan M. Kayes, Gang He
  • Patent number: 10587095
    Abstract: A vertical cavity surface emitting laser includes a gain layer configured to generate light; a distributed Bragg reflector below the gains layer; and a meta structure reflector above the gain layer and comprising a plurality of nano structures having a sub wavelength dimension.
    Type: Grant
    Filed: November 6, 2017
    Date of Patent: March 10, 2020
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Byunghoon Na, Seunghoon Han
  • Patent number: 10578819
    Abstract: A surface light emitting semiconductor laser element, comprises a substrate, a lower reflector including a semiconductor multi-layer disposed on the substrate, an active layer disposed on the lower reflector, an upper reflector including a semiconductor multi-layer disposed on the active layer, a compound semiconductor layer having a first opening for exposing the upper reflector and extending over the upper reflector, and a metal film having a second opening for exposing the upper reflector disposed inside of the first opening and extending over the compound semiconductor layer, wherein the metal film and the compound semiconductor layer constitute a complex refractive index distribution structure where a complex refractive index is changed from the center of the second opening towards the outside. A method of emitting laser light in a single-peak transverse mode is also provided.
    Type: Grant
    Filed: June 19, 2018
    Date of Patent: March 3, 2020
    Assignee: Sony Corporation
    Inventors: Yoshiaki Watanabe, Hironobu Narui, Yuichi Kuromizu, Yoshinori Yamauchi, Yoshiyuki Tanaka
  • Patent number: 10574031
    Abstract: A surface emitting laser may include an isolation layer including a first center portion and a first plurality of outer portions extending from the first center portion, and a metal layer including a second center portion and a second plurality of outer portions extending from the second center portion. The metal layer may be formed on the isolation layer such that a first outer portion, of the second plurality of outer portions, is formed over one of the first plurality of outer portions. The surface emitting laser may include a passivation layer including a plurality of openings. An opening may be formed over the first outer portion. The surface emitting laser may include a plurality of oxidation trenches. An oxidation trench may be positioned at least partially between the first outer portion and a second outer portion of the second plurality of outer portions.
    Type: Grant
    Filed: June 30, 2017
    Date of Patent: February 25, 2020
    Assignee: Lumentum Operations LLC
    Inventors: Ajit Vijay Barve, Albert Yuen
  • Patent number: 10564091
    Abstract: An optical sensing device includes a substrate; a first dielectric layer extending thereon; a plurality of pairs of opposite antennas patterned on the first layer; and a second dielectric layer that covers all of the antennas. Opposite antennas are, in each of the pairs, separated by a gap g, which, on average, is between 1 nm and 50 nm, as measured in a direction x parallel to a main plane of the substrate. The pairs of antennas have different geometries. The second layer covers all the antennas and defines an electro-magnetic field enhancement volume between the opposite antennas of each of the pairs, thanks to the gap. Electro-magnetic radiation can be concentrated in each volume, making it possible to optically sense an analyte via opposite antennas of each of the pairs. Such a device allows analytes to be funneled and guided into the field-enhanced volumes for deterministic sensing.
    Type: Grant
    Filed: August 19, 2017
    Date of Patent: February 18, 2020
    Assignee: International Business Machines Corporation
    Inventors: Cynthia Gruber, Lars Herrmann, Emanuel Marc Lörtscher, Bruno Michel, Lukas Novotny
  • Patent number: 10535976
    Abstract: A vertical-cavity surface-emitting laser (VCSEL) device includes a first distributed Bragg reflector (DBR) structure of a first conductivity type, and a second DBR structure of a second conductivity type. The second conductivity type is different than the first conductivity type. The VCSEL includes a cavity positioned between the first DBR structure and the second DBR structure. The cavity includes at least one quantum well structure to generate light. The VCSEL includes a first thermal buffer layer positioned between the cavity and the first DBR structure, and a second thermal buffer positioned between the cavity and the second DBR structure.
    Type: Grant
    Filed: July 25, 2018
    Date of Patent: January 14, 2020
    Assignee: Avago Technologies International Sales Pte. Limited
    Inventors: Ramana M. V. Murty, Tak Kui Wang
  • Patent number: 10516250
    Abstract: A near-infrared vertical-cavity surface-emitting laser is provided, which utilizes a conventional distributed Bragg reflector and a complex Bragg reflector which consists of a dielectric Bragg reflector and a reflective metal layer to construct a cavity. With the disposition of a confining layer, the light emitted from an active layer is confined in the cavity to resonate so as to emit a laser light. The thickness of the complex Bragg reflector is much thinner than that of the conventional distributed Bragg reflector, thereby lowering the cost of manufacture. In addition, with the transfer method, the laser is transferred to the substrate with high thermal conductivity to increase the heat dissipation efficiency. Therefore, the present invention can maintain operation while emitting a high-power laser.
    Type: Grant
    Filed: February 26, 2019
    Date of Patent: December 24, 2019
    Assignee: EPILEDS TECHNOLOGIES, INC.
    Inventors: Wen-Herng Su, Ming-Sen Hsu
  • Patent number: 10516249
    Abstract: To provide a laser oscillator, in which an LD module is fixed to a cooling plate through insulated fixation that is superior in durability, cost, and workability in an insulated fixation operation. A laser oscillator includes an LD module. The LD module has one or a plurality of LD light source(s), and is placed on a thermally conductive insulating member placed on a cooling plate. The LD module of the laser oscillator is fixed to the cooling plate, via an elastic insulating member fixed to the cooling plate.
    Type: Grant
    Filed: March 6, 2017
    Date of Patent: December 24, 2019
    Assignee: FANUC CORPORATION
    Inventor: Tetsuhisa Takazane
  • Patent number: 10511143
    Abstract: Structures for integrated lasers, systems including integrated lasers, and associated fabrication methods. A ring waveguide and a seed region are arranged interior of the ring waveguide. A laser strip extends across a portion of the ring waveguide. The laser strip has an end contacting the seed region and another opposing end. The laser strip includes a laser medium and a p-n junction capable of generating electromagnetic radiation. The p-n junction of the laser strip is aligned with a portion of the ring waveguide.
    Type: Grant
    Filed: August 31, 2017
    Date of Patent: December 17, 2019
    Assignee: GLOBALFOUNDRIES INC.
    Inventors: John J. Ellis-Monaghan, Sebastian Ventrone, Vibhor Jain, Yves Ngu
  • Patent number: 10483435
    Abstract: A semiconductor light emitting device includes a conductive substrate and a first metal layer disposed on the substrate. The first metal layer is formed so as to be electrically connected with the substrate, and the first metal layer includes an Au based material. A joining layer is formed on the first metal layer. The joining layer includes a second metal layer including Au and a third metal layer including Au. A metallic contact layer and an insulating layer are formed on the joining layer. A semiconductor layer is formed on the metallic contact layer and the insulating layer and includes a red-based light emitting layer. An electrode is formed on the semiconductor layer and is made of metal. The insulating layer includes a patterned aperture, and at least a part of the metallic contact layer is formed in the aperture.
    Type: Grant
    Filed: June 22, 2018
    Date of Patent: November 19, 2019
    Assignee: ROHM CO., LTD.
    Inventors: Masakazu Takao, Mitsuhiko Sakai, Kazuhiko Senda
  • Patent number: 10396527
    Abstract: A vertical-cavity surface-emitting laser (VSCEL) and method for producing a VCSEL are described, the VCSEL including an undercut active region. The active region of the VCSEL is undercut relative to current-spreading layers of the VCSEL, such that a width of a tunnel junction of the VCSEL overgrown by a current spreading layer is less than a width of an active region of the VCSEL, and a width of the active region of the VCSEL is less than a width of the overgrown current-spreading layer, such that the VCSEL including the undercut active region is configured to transmit data at speeds greater than 25 gigabits/second.
    Type: Grant
    Filed: June 14, 2017
    Date of Patent: August 27, 2019
    Assignee: Mellanox Technologies, Ltd.
    Inventors: Alexei Sirbu, Vladimir Iakovlev, Yuri Berk, Itshak Kalifa, Elad Mentovich, Sylvie Rockman
  • Patent number: 10388819
    Abstract: A receiver unit having an optically operated voltage source, the voltage source including a first stack having an upper side and an underside and being formed on an upper side of a non-Si substrate based on III-V semiconductor layers arranged in the shape of a stack, and having a second electrical terminal contact on the upper side of the first stack and a first electrical terminal contact on an underside of the non-Si substrate, a voltage generated with the aid of the incidence of light onto the upper side of the first stack being present between the two terminal contacts, and including a second stack having a MOS transistor structure having III-V semiconductor layers and including a control terminal and a drain terminal and a source terminal. The MOS transistor structure being designed as a depletion field effect transistor.
    Type: Grant
    Filed: August 16, 2018
    Date of Patent: August 20, 2019
    Assignee: AZUR SPACE SOLAR POWER GMBH
    Inventors: Daniel Fuhrmann, Thomas Lauermann, Gregor Keller
  • Patent number: 10386489
    Abstract: A light beam steering transmissive element with an arbitrarily sized aperture comprising at least one layer of a insulating matrix modified for increased polarizability under electrical, magnetic or optical stimulation, between two or more substrates that can be electrically configured to provide signal modulation (optical, magnetic or electrical) that will control the wavefronts of incident light, thereby taking off-axis electromagnetic signals and aligning them to the aperture of a receiving element positioned near the device, or the reverse, sending signals originating behind the steering device to a variety of user-defined angles in two or more dimensions.
    Type: Grant
    Filed: February 1, 2017
    Date of Patent: August 20, 2019
    Inventors: Jeffrey Albelo, Joseph LaChapelle
  • Patent number: 10389088
    Abstract: In a semiconductor light emitting element provided with an active layer 4, a pair of cladding layers 2, 7 between which the active layer 4 is interposed, and a phase modulation layer 6 optically coupled to the active layer 4, the phase modulation layer 6 includes a base layer 6A and a plurality of different refractive index regions 6B having different refractive indices from the base layer 6A. When an XYZ orthogonal coordinate system having a thickness direction of the phase modulation layer 6 as a Z-axis direction is set and a square lattice of a virtual lattice constant a is set in an XY plane, each of the different refractive index regions 6B is disposed so that a centroid position G thereof is shifted from a lattice point position in a virtual square lattice by a distance r, and the distance r is 0<r?0.3a.
    Type: Grant
    Filed: March 11, 2016
    Date of Patent: August 20, 2019
    Assignee: HAMAMATSU PHOTONICS K.K.
    Inventors: Yoshitaka Kurosaka, Yuu Takiguchi, Takahiro Sugiyama, Kazuyoshi Hirose, Yoshiro Nomoto
  • Patent number: 10389085
    Abstract: Shown is a method of manufacturing a light emitting device capable of efficiently heating a device at the time of DPP annealing and suppressing heat generation of the device at the time of driving. In the method of manufacturing the light emitting device, a first p-type electrode is formed on a low-concentration portion having a low p-type dopant concentration formed under a first region of the p-type semiconductor portion, a second p-type electrode is formed on a high-concentration portion having a high p-type dopant concentration formed under a second region of the p-type semiconductor portion, and a predetermined forward bias voltage is applied between the first p-type electrode and a first n-type electrode formed on an n-type semiconductor portion at the time of DPP annealing.
    Type: Grant
    Filed: September 3, 2018
    Date of Patent: August 20, 2019
    Assignee: Sodick Co., Ltd.
    Inventor: Yuki Tsuda
  • Patent number: 10374391
    Abstract: A non-planarized VCSEL can include: a blocking region over or under an active region, the blocking region having a first thickness; one or more conductive channel cores in the blocking region, the one or more conductive channel cores having a second thickness that is larger than the first thickness, wherein the blocking region is defined by having an implant and the one or more conductive channel cores are devoid of the implant, wherein the blocking region is lateral the one or more conductive channel cores, the blocking region and one or more conductive channel cores being an isolation region; and a non-planarized semiconductor region of one or more non-planarized semiconductor layers over the isolation region. The VCSEL can include a planarized bottom mirror region below the active region and a non-planarized top mirror region above the isolation region, or a non-planarized bottom mirror region below the active region.
    Type: Grant
    Filed: September 28, 2017
    Date of Patent: August 6, 2019
    Assignee: FINISAR CORPORATION
    Inventors: Luke A. Graham, Sonia Quadery, Deepa Gazula, Haiquan Yang
  • Patent number: 10361341
    Abstract: A red-light emitting diode includes an n-doped portion, a p-doped portion, and a light emitting region located between the n-doped portion and a p-doped portion. The light emitting region includes a light-emitting indium gallium nitride layer emitting light at a peak wavelength between 600 and 750 nm under electrical bias thereacross, an aluminum gallium nitride layer located on the light-emitting indium gallium nitride layer and a GaN barrier layer located on the aluminum gallium nitride layer.
    Type: Grant
    Filed: October 18, 2017
    Date of Patent: July 23, 2019
    Assignee: GLO AB
    Inventors: Fariba Danesh, Richard P. Schneider, Jr., Fan Ren, Michael Jansen, Nathan Gardner
  • Patent number: 10331057
    Abstract: A light emitting element device includes: a light emitting thyristor having a layered structure including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type different from the first conductivity type, a third semiconductor layer of the first conductivity type, and a fourth semiconductor layer of the second conductivity type that are layered in this order; and a gate electrode for supplying gate current to the light emitting thyristor. The light emitting thyristor includes an etching stop layer disposed on a surface of the third semiconductor layer or included in the third semiconductor layer, the etching stop layer being a semiconductor layer having an etching rate lower than an etching rate of a semiconductor layer adjacent to the etching stop layer.
    Type: Grant
    Filed: January 27, 2017
    Date of Patent: June 25, 2019
    Assignee: Oki Data Corporation
    Inventors: Hironori Furuta, Genichiro Matsuo, Shinya Jumonji
  • Patent number: 10305249
    Abstract: In a laser apparatus, transmission of vibration, which is generated in a portion that generates a cooling gas flow, to a laser unit is suppressed, and heat generated from the laser unit is efficiently dissipated. A laser unit is housed inside a box-shaped housing having a plurality of faces. A frame supports a laser unit with a first mount interposed therebetween inside the housing. The frame has a through-hole penetrating from one face side to the other face side. A blower fan generates a flow of cooling gas for cooling the laser unit. The blower fan is attached to, for example, a second housing so as to face the laser unit. The cooling gas moves through the through-hole of the frame between the blower fan and the laser unit.
    Type: Grant
    Filed: July 24, 2018
    Date of Patent: May 28, 2019
    Assignee: FUJIFILM Corporation
    Inventors: Kaku Irisawa, Tomoki Inoue, Atsushi Hashimoto
  • Patent number: 10297975
    Abstract: The purpose of the present invention is to provide a laser light source module that is capable of heat dissipation from a laser device and of suppressing the diffusion of a light beam due to the close arrangement of the laser device. The laser light source module comprises a stem that is a base plate and first and second laser assemblies disposed on the stem. Each of the laser assemblies comprises a multi-emitter LD bar that is a laser device emitting a laser light along an optical axis, and a holding member having a mounting surface parallel to the axis, the multi-emitter LD bar being mounted on the mounting surface. The first and second laser assemblies are positioned such that the optical axes of the assemblies are parallel to each other and that the mounting surfaces of the assemblies are arranged opposite to each other in parallel.
    Type: Grant
    Filed: October 27, 2015
    Date of Patent: May 21, 2019
    Assignee: MITSUBISHI ELECTRIC CORPORATION
    Inventors: Daisuke Morita, Kazutaka Ikeda, Motoaki Tamaya
  • Patent number: 10290995
    Abstract: A terahertz quantum cascade laser device includes a substrate, q semiconductor stacked body and a first electrode. The semiconductor stacked body includes an active layer and a first clad layer. The active layer is provided on the substrate and is configured to emit infrared laser light by an intersubband optical transition. The first clad layer is provided on the active layer. A ridge waveguide is provided in the semiconductor stacked body. A first distributed feedback region and a second distributed feedback region are provided at an upper surface of the first clad layer to be separated from each other along an extension direction of the ridge waveguide. The first electrode is provided at the upper surface of the first clad layer. A planar size of the first distributed feedback region is smaller than a planar size of the second distributed feedback region.
    Type: Grant
    Filed: September 1, 2017
    Date of Patent: May 14, 2019
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Tsutomu Kakuno, Shinji Saito, Osamu Yamane
  • Patent number: 10270225
    Abstract: A semiconductor laser arrangement and a projector are disclosed. In an embodiment the semiconductor laser arrangement includes at least two electrically pumped active zones, each active zone configured to emit laser radiation of a different emission wavelength and a semiconductor-based waveguide structure, wherein the active zones are electrically independently operable of one another, wherein the active zones optically follow directly one another along a beam direction and are arranged in a descending manner with regard to their emission wavelengths, wherein at least in a region of a last active zone along the beam direction, a laser radiation of all active zones jointly runs through the waveguide structure, wherein at least the last active zone comprises a plurality of waveguides which are stacked one above the other and are oriented parallel to one another, wherein one of the waveguides is configured for the radiation emitted by the last active zone.
    Type: Grant
    Filed: November 2, 2016
    Date of Patent: April 23, 2019
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Bernhard Stojetz, Alfred Lell, Christoph Eichler, Andreas Löffler, André Somers