Semiconductor Patents (Class 372/43.01)
  • Patent number: 10297975
    Abstract: The purpose of the present invention is to provide a laser light source module that is capable of heat dissipation from a laser device and of suppressing the diffusion of a light beam due to the close arrangement of the laser device. The laser light source module comprises a stem that is a base plate and first and second laser assemblies disposed on the stem. Each of the laser assemblies comprises a multi-emitter LD bar that is a laser device emitting a laser light along an optical axis, and a holding member having a mounting surface parallel to the axis, the multi-emitter LD bar being mounted on the mounting surface. The first and second laser assemblies are positioned such that the optical axes of the assemblies are parallel to each other and that the mounting surfaces of the assemblies are arranged opposite to each other in parallel.
    Type: Grant
    Filed: October 27, 2015
    Date of Patent: May 21, 2019
    Assignee: MITSUBISHI ELECTRIC CORPORATION
    Inventors: Daisuke Morita, Kazutaka Ikeda, Motoaki Tamaya
  • Patent number: 10290995
    Abstract: A terahertz quantum cascade laser device includes a substrate, q semiconductor stacked body and a first electrode. The semiconductor stacked body includes an active layer and a first clad layer. The active layer is provided on the substrate and is configured to emit infrared laser light by an intersubband optical transition. The first clad layer is provided on the active layer. A ridge waveguide is provided in the semiconductor stacked body. A first distributed feedback region and a second distributed feedback region are provided at an upper surface of the first clad layer to be separated from each other along an extension direction of the ridge waveguide. The first electrode is provided at the upper surface of the first clad layer. A planar size of the first distributed feedback region is smaller than a planar size of the second distributed feedback region.
    Type: Grant
    Filed: September 1, 2017
    Date of Patent: May 14, 2019
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Tsutomu Kakuno, Shinji Saito, Osamu Yamane
  • Patent number: 10270225
    Abstract: A semiconductor laser arrangement and a projector are disclosed. In an embodiment the semiconductor laser arrangement includes at least two electrically pumped active zones, each active zone configured to emit laser radiation of a different emission wavelength and a semiconductor-based waveguide structure, wherein the active zones are electrically independently operable of one another, wherein the active zones optically follow directly one another along a beam direction and are arranged in a descending manner with regard to their emission wavelengths, wherein at least in a region of a last active zone along the beam direction, a laser radiation of all active zones jointly runs through the waveguide structure, wherein at least the last active zone comprises a plurality of waveguides which are stacked one above the other and are oriented parallel to one another, wherein one of the waveguides is configured for the radiation emitted by the last active zone.
    Type: Grant
    Filed: November 2, 2016
    Date of Patent: April 23, 2019
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Bernhard Stojetz, Alfred Lell, Christoph Eichler, Andreas Löffler, André Somers
  • Patent number: 10249777
    Abstract: An infrared light-emitting diode includes, from up to bottom, a P-type ohmic electrode, a contact layer, a P-type cladding layer, an active layer, an N-type cladding layer, a buffer layer, a GaAs substrate and an N-type ohmic electrode. The N-type cladding layer and the P-type cladding layer or either of them is InxGa1-xAs. The cladding layer of InxGa1-xAs, due to low resistance, can improve current expansion, reduce voltage and improve light-emitting efficiency.
    Type: Grant
    Filed: January 15, 2018
    Date of Patent: April 2, 2019
    Assignee: XIAMEN SAN'AN OPTOELECTRONICS CO., LTD.
    Inventors: Chun Kai Huang, Chun-Yi Wu, Duxiang Wang, Chaoyu Wu, Jin Wang
  • Patent number: 10229887
    Abstract: Discussed generally herein are methods and devices including or providing an electromagnetic interference (EMI) shielding. A device can include substrate including electrical connection circuitry therein, ground circuitry on, or at least partially in the substrate, the ground circuitry at least partially exposed by a surface of the substrate, a die electrically connected to the connection circuitry and the ground circuitry, the die on the substrate, a conductive material on a die backside, and a conductive paste or one or more wires electrically connected to the ground circuitry and the conductive material.
    Type: Grant
    Filed: March 31, 2016
    Date of Patent: March 12, 2019
    Assignee: Intel Corporation
    Inventors: Rajendra C. Dias, Mitul B. Modi
  • Patent number: 10211060
    Abstract: A number of variations may include a method that may include depositing a first layer on a first semiconductor layer in an overlying position with respect to at least one trench structure formed in the first semiconductor epi layer. The first layer may include a first metal and a second metal. A second layer may comprise a material constructed and arranged to scavenge semiconductor material migrating from the first semiconductor layer during annealing may be deposited over the first layer. The first semiconductor layer may be subjected to at least a first annealing act to provide a first structure. At least a portion of the first structure may be stripped to remove any of the first layer not reacted with the semiconductor material to form a Schottky barrier structure during the first annealing act.
    Type: Grant
    Filed: November 22, 2016
    Date of Patent: February 19, 2019
    Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventors: Michael Thomason, Mohammed Tanvir Quddus, James Morgan, Mihir Mudholkar, Scott Donaldson, Gordon M. Grivna
  • Patent number: 10164146
    Abstract: A light emitting device includes a p-side heterostructure having a short period superlattice (SPSL) formed of alternating layers of AlxhighGa1-xhighN doped with a p-type dopant and AlxlowGa1-xlowN doped with the p-type dopant, where xlow?xhigh?0.9. Each layer of the SPSL has a thickness of less than or equal to about six bi-layers of AlGaN.
    Type: Grant
    Filed: July 13, 2016
    Date of Patent: December 25, 2018
    Assignee: Palo Alto Research Center Incorporated
    Inventors: John E. Northrup, Bowen Cheng, Christopher L. Chua, Thomas Wunderer, Noble M. Johnson, Zhihong Yang
  • Patent number: 10157898
    Abstract: A light emitter, comprising a monolithic n-type layer (comprising at least first and second n-type regions), a monolithic p-type layer (comprising at least first and second p-type regions), at least a first isolation region and at least a first electrically conductive via that extends through at least part of the first isolation region. At least part of the first isolation region is between the first n-type region and the second n-type region, and/or least part of the first isolation region is between the first p-type region and the second p-type region.
    Type: Grant
    Filed: March 21, 2017
    Date of Patent: December 18, 2018
    Assignee: Cree, Inc.
    Inventors: Gerald H. Negley, Antony Paul Van De Ven
  • Patent number: 10148365
    Abstract: A communication interface apparatus can include a free-air optical transceiver for communicating signals at a first speed and an electrical contact for communicating at least one of: signals at a second speed or power. The communication interface can include a substrate having a plurality of electrical circuits. The optical transceiver can be electrically coupled to the substrate and configured to transceive an optical signal in free air. In an example, the optical transceiver can convert the optical signal to the signal at the first speed, such as an electrical signal. In an example, the electrical contact can be communicatively coupled to the substrate. The electrical contact and the free-air optical transceiver can be attached to the substrate in fixed relation with respect to one another.
    Type: Grant
    Filed: March 31, 2017
    Date of Patent: December 4, 2018
    Assignee: Intel Corporation
    Inventor: Arvind Sundaram
  • Patent number: 10122152
    Abstract: A vertical-cavity surface-emitting Laser (VCSEL) has a three-trench structure. By forming a first trench within a mesa around the periphery of an output window of the VCSEL, the overall capacitance is decreased and the time used in the oxidation process for an oxidation layer is shortened. By forming a second trench and a third trench on the periphery of the mesa in a step-like concave manner, the mesa becomes a step-like structure having double mesa-layers. Such that, a larger heat-radiating area can be obtained for decreasing thermal effects, while the metal-gap defects of the metal layer can also be avoided. The implant layer is formed around the periphery of the output window for controlling the optical mode and confining the current path. In addition, an output layer is formed on the output window for controlling the output light.
    Type: Grant
    Filed: February 15, 2018
    Date of Patent: November 6, 2018
    Assignee: TrueLight Corporation
    Inventors: Bing-Cheng Lin, Chih Cheng Chen, Hung-Wei Tseng
  • Patent number: 10108079
    Abstract: The present invention is directed to a laser light source for a vehicle.
    Type: Grant
    Filed: October 27, 2017
    Date of Patent: October 23, 2018
    Assignee: Soraa Laser Diode, Inc.
    Inventors: James W. Raring, Paul Rudy
  • Patent number: 10097031
    Abstract: A charging device to wirelessly charge a target device, including: a coil antenna having a first surface facing a first direction at which the target device is placed for charging and a second surface facing an opposite direction from the first direction, generating a first magnetic field; a plurality of pairs of metallic small loop transmission coils arranged to the second surface side of the coil antenna, to generate a second magnetic field in response to the first magnetic field to enhance the first magnetic field, the first and second magnetic fields being directed in the first direction; and wherein a first one of each pair of metallic small loop transmission coils is coupled to a second one of the pair in parallel and a size of the first one of each pair is different from that of the second one of the pair, such that when a distance between the target device and the first surface is changed, one of the pair of metallic small loop transmission coils is enabled to be resonant with the coil antenna.
    Type: Grant
    Filed: September 20, 2016
    Date of Patent: October 9, 2018
    Assignee: HONG KONG APPLIED SCIENCE AND TECHNOLOGY RESEARCH INSITTUTE COMPANY LIMITED
    Inventors: Yan Liu, Jun Chen
  • Patent number: 10096746
    Abstract: A semiconductor element includes a super-lattice buffer layer including AlxN1-x layers and AlyO1-y layers (0<x<1, 0<y<1). The super-lattice buffer layer can mitigate corrosion to the side wall by chemical solution during chip fabrication, and improve chip yield. Fabrication the super-lattice buffer layer to achieve the effects can be realized, for example, using chemical vapor deposition (CVD).
    Type: Grant
    Filed: May 27, 2017
    Date of Patent: October 9, 2018
    Assignee: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Sheng-wei Chou, Chang-cheng Chuo, Chan-chan Ling, Chia-hung Chang
  • Patent number: 10084282
    Abstract: A broad area quantum cascade laser subject to having high order transverse optical modes during operation includes a laser cavity at least partially enclosed by walls, and a perturbation in the laser cavity extending from one or more of the walls. The perturbation may have a shape and a size sufficient to suppress high order transverse optical modes during operation of the broad area quantum cascade laser, whereby a fundamental transverse optical mode is selected over the high order transverse optical modes. As a result, the fundamental transverse mode operation in broad-area quantum cascade lasers can be regained, when it could not otherwise be without such a perturbation.
    Type: Grant
    Filed: August 14, 2017
    Date of Patent: September 25, 2018
    Assignee: THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE AIR FORCE
    Inventors: Ron Kaspi, Chi Yang
  • Patent number: 10032961
    Abstract: A semiconductor light emitting device includes a conductive substrate and a first metal layer disposed on the substrate. The first metal layer is formed so as to be electrically connected with the substrate, and the first metal layer includes an Au based material. A joining layer is formed on the first metal layer. The joining layer includes a second metal layer including Au and a third metal layer including Au. A metallic contact layer and an insulating layer are formed on the joining layer. A semiconductor layer is formed on the metallic contact layer and the insulating layer and includes a red-based light emitting layer. An electrode is formed on the semiconductor layer and is made of metal. The insulating layer includes a patterned aperture, and at least a part of the metallic contact layer is formed in the aperture.
    Type: Grant
    Filed: September 26, 2017
    Date of Patent: July 24, 2018
    Assignee: ROHM CO., LTD.
    Inventors: Masakazu Takao, Mitsuhiko Sakai, Kazuhiko Senda
  • Patent number: 10025051
    Abstract: A surface light emitting semiconductor laser element, comprises a substrate, a lower reflector including a semiconductor multi-layer disposed on the substrate, an active layer disposed on the lower reflector, an upper reflector including a semiconductor multi-layer disposed on the active layer, a compound semiconductor layer having a first opening for exposing the upper reflector and extending over the upper reflector, and a metal film having a second opening for exposing the upper reflector disposed inside of the first opening and extending over the compound semiconductor layer, wherein the metal film and the compound semiconductor layer constitute a complex refractive index distribution structure where a complex refractive index is changed from the center of the second opening towards the outside. A method of emitting laser light in a single-peak transverse mode is also provided.
    Type: Grant
    Filed: November 3, 2017
    Date of Patent: July 17, 2018
    Assignee: Sony Corporation
    Inventors: Yoshiaki Watanabe, Hironobu Narui, Yuichi Kuromizu, Yoshinori Yamauchi, Yoshiyuki Tanaka
  • Patent number: 9985253
    Abstract: A method of manufacturing a light scattering layer and an organic light-emitting diode are provided. The manufacturing method includes: depositing a material having a low refractive index value in hole structures of a mask on a base; removing the mask, and forming a plurality of raised structures on the base; depositing a material having a high refractive index value between the raised structures to form a planarization layer, thereby manufacturing a light scattering layer constituted by the raised structures and the planarization layer on the base. The manufacturing method has the advantages of being simple to prepare, low-cost, etc.
    Type: Grant
    Filed: April 27, 2016
    Date of Patent: May 29, 2018
    Assignee: WUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Zhiyong Wu, Liang Xu
  • Patent number: 9972968
    Abstract: Methods of passivating at least one facet of a multilayer waveguide structure can include: cleaning, in a first chamber of a multi-chamber ultra-high vacuum (UHV) system, a first facet of the multilayer waveguide structure; transferring the cleaned multilayer waveguide structure from the first chamber to a second chamber of the multi-chamber UHV system; forming, in the second chamber, a first single crystalline passivation layer on the first facet; transferring the multilayer waveguide structure from the second chamber to a third chamber of the multi-chamber UHV system; and forming, in the third chamber, a first dielectric coating on the first single crystalline passivation layer, in which the methods are performed in an UHV environment of the multi-chamber UHV system without removing the multilayer waveguide structure from the UHV environment.
    Type: Grant
    Filed: April 20, 2016
    Date of Patent: May 15, 2018
    Assignee: Trumpf Photonics, Inc.
    Inventors: Qiang Zhang, Haiyan An, Hans Georg Treusch
  • Patent number: 9939665
    Abstract: A communication apparatus includes an optical fiber along which radiation can be transmitted; an optical fiber grating formed within the optical fiber, the optical fiber grating having a structure, and configured to reflect radiation at a particular wavelength; and an instrument coupled to the grating and configured to controllably modify the structure of the grating, thereby changing the wavelength at which the grating reflects radiation. A communication system including the communication apparatus is also described, along with a method of communicating a signal.
    Type: Grant
    Filed: October 28, 2016
    Date of Patent: April 10, 2018
    Assignee: Airbus Operations Limited
    Inventors: Kayvon Barad, Chris Wood, Alessio Cipullo
  • Patent number: 9935428
    Abstract: A semiconductor light-emitting element has a distributed Bragg reflector that is grown by depositing an InAlN layer and a GaN layer a plurality of times in that order on a semipolar plane of a semiconductor substrate, and a semiconductor structure layer that is formed on the distributed Bragg reflector and includes an active layer. The InAlN layer has a plurality of projections on an interface with the GaN layer, and the InAlN layer has a low In region which is formed at the top of each of the plurality of projections and which is lower in In composition than the remaining region.
    Type: Grant
    Filed: March 8, 2017
    Date of Patent: April 3, 2018
    Assignee: Stanley Electric Co., Ltd.
    Inventors: Shinichi Tanaka, Kazuki Kiyohara, Yusuke Yokobayashi
  • Patent number: 9929536
    Abstract: A vertical-cavity surface-emitting Laser (VCSEL) has a three-trench structure. By forming a first trench within a mesa around the periphery of an output window of the VCSEL, the overall capacitance is decreased and the time used in the oxidation process for an oxidation layer is shortened. By forming a second trench and a third trench on the periphery of the mesa in a step-like concave manner, the mesa becomes a step-like structure having double mesa-layers. Such that, a larger heat-radiating area can be obtained for decreasing thermal effects, while the metal-gap defects of the metal layer can also be avoided. The implant layer is formed around the periphery of the output window for controlling the optical mode and confining the current path. In addition, an output layer is formed on the output window for controlling the output light.
    Type: Grant
    Filed: June 15, 2017
    Date of Patent: March 27, 2018
    Assignee: TrueLight Corporation
    Inventors: Bing-Cheng Lin, Chih Cheng Chen, Hung-Wei Tseng
  • Patent number: 9887517
    Abstract: A gallium and nitrogen containing laser diode device. The device has a gallium and nitrogen containing substrate material comprising a surface region. The surface region is configured on either a non-polar crystal orientation or a semi-polar crystal orientation. The device has a recessed region formed within a second region of the substrate material, the second region being between a first region and a third region. The recessed region is configured to block a plurality of defects from migrating from the first region to the third region. The device has an epitaxially formed gallium and nitrogen containing region formed overlying the third region. The epitaxially formed gallium and nitrogen containing region is substantially free from defects migrating from the first region and an active region formed overlying the third region.
    Type: Grant
    Filed: October 10, 2016
    Date of Patent: February 6, 2018
    Assignee: SORAA LASER DIODE, INC.
    Inventors: Melvin McLaurin, James W. Raring, Christiane Elsass, Thiago P. Melo, Mathew C. Schmidt
  • Patent number: 9829780
    Abstract: The present invention is directed to a laser light source for a vehicle.
    Type: Grant
    Filed: July 17, 2015
    Date of Patent: November 28, 2017
    Assignee: Soraa Laser Diode, Inc.
    Inventors: James W. Raring, Paul Rudy
  • Patent number: 9829778
    Abstract: The present invention is directed to a laser light source.
    Type: Grant
    Filed: June 18, 2015
    Date of Patent: November 28, 2017
    Assignee: Soraa Laser Diode, Inc.
    Inventors: James W. Raring, Paul Rudy
  • Patent number: 9825428
    Abstract: In various embodiments, passivation layers are deposited on internal surfaces of cooling channels defined within heat sinks for electronic devices such as laser beam emitters, the passivation layers retarding or substantially preventing erosion and/or corrosion of the heat sinks.
    Type: Grant
    Filed: September 21, 2016
    Date of Patent: November 21, 2017
    Assignee: TERADIODE, INC.
    Inventors: Robin Huang, Bien Chann, Parviz Tayebati
  • Patent number: 9819144
    Abstract: A method for production of an optoelectronic device includes fabricating a plurality of vertical emitters on a semiconductor substrate. Respective top surfaces of the emitters are bonded to a heat sink, after which the semiconductor substrate is removed below respective bottom surfaces of the emitters. Both anode and cathode contacts are attached to the bottom surfaces so as to drive the emitters to emit light from the bottom surfaces. In another embodiment, the upper surface of a semiconductor substrate is bonded to a carrier substrate having through-holes that are aligned with respective top surfaces of the emitters, after which the semiconductor substrate is removed below respective bottom surfaces of the emitters, and the respective bottom surfaces of the emitters are bonded to a heat sink.
    Type: Grant
    Filed: February 10, 2016
    Date of Patent: November 14, 2017
    Assignee: APPLE INC.
    Inventors: Chin Han Lin, Kevin A. Sawyer, Neil MacKinnon, Venkataram R. Raju, Weiping Li, Xiaofeng Fan
  • Patent number: 9793359
    Abstract: A method of forming a semiconductor thin film structure and a semiconductor thin film structure formed using the same is provided. A sacrificial layer is formed on a substrate and then patterned through various methods, an inorganic thin film is formed on the sacrificial layer and then the sacrificial layer is selectively removed to form a cavity defined by the substrate and the inorganic thin film on the substrate.
    Type: Grant
    Filed: May 15, 2012
    Date of Patent: October 17, 2017
    Assignee: HEXASOLUTION CO., LTD.
    Inventors: Euijoon Yoon, Shin-Woo Ha
  • Patent number: 9787055
    Abstract: A semiconductor strip laser and a semiconductor component are disclosed. In embodiments the laser includes a first semiconductor region of a first conductivity type of a semiconductor body, a second semiconductor region of a second different conductivity type of the semiconductor body, at least one active zone of the semiconductor body configured to generate laser radiation between the first and second semiconductor regions. The laser further includes a strip waveguide formed at least in the second semiconductor region and providing a one-dimensional wave guidance along a waveguide direction of the laser radiation generated in the active zone during operation, a first electric contact on the first semiconductor region, a second electric contact on the second semiconductor region and at least one heat spreader dimensionally stably connected to the semiconductor body at least up to a temperature of 220° C., and having an average thermal conductivity of at least 50 W/m·K.
    Type: Grant
    Filed: March 23, 2015
    Date of Patent: October 10, 2017
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Jens Müller, Alfred Lell, Uwe Strauβ
  • Patent number: 9774714
    Abstract: A method for fabricating a window member is provided. A transparent substrate including a transmitting region and a non-transmitting region may be prepared. A light curable adhesive layer may be disposed on the transparent substrate. A plurality of micro patterns may be disposed on the transparent substrate or the light curable adhesive layer in the non-transmitting region. The light curable adhesive layer may be cured by light irradiation. The light curable adhesive layer may include a transparent adhesive. A storage modulus of the transparent adhesive may be greater than or equal to about 103 Pa and less than about 106 Pa at room temperature before curing, and greater than or equal to about 106 Pa at room temperature after curing.
    Type: Grant
    Filed: January 8, 2015
    Date of Patent: September 26, 2017
    Assignee: Samsung Display Co., Ltd.
    Inventors: Jong-Whan Cho, Hyeon-Deuk Hwang, Jong-Deok Park
  • Patent number: 9758373
    Abstract: A method for manufacturing a protective layer for protecting an intermediate structural layer against etching with hydrofluoric acid, the intermediate structural layer being made of a material that can be etched or damaged by hydrofluoric acid, the method comprising the steps of: forming a first layer of aluminum oxide, by atomic layer deposition, on the intermediate structural layer; performing a thermal crystallization process on the first layer of aluminum oxide, forming a first intermediate protective layer; forming a second layer of aluminum oxide, by atomic layer deposition, above the first intermediate protective layer; and performing a thermal crystallization process on the second layer of aluminum oxide, forming a second intermediate protective layer and thereby completing the formation of the protective layer. The method for forming the protective layer can be used, for example, during the manufacturing steps of an inertial sensor such as a gyroscope or an accelerometer.
    Type: Grant
    Filed: April 25, 2014
    Date of Patent: September 12, 2017
    Assignee: STMICROELECTRONICS S.R.L.
    Inventors: Stefano Losa, Raffaella Pezzuto, Roberto Campedelli, Matteo Perletti, Luigi Esposito, Mikel Azpeitia Urquia
  • Patent number: 9759993
    Abstract: In some aspects, the present disclosure is directed to, among other things, a device. The device may include a mirror with a first material and a pivoting system with a second material. The fracture toughness of the second material may be at least 20 M-Pa(m1/2). The pivoting system may be configured to pivot the mirror around an axis.
    Type: Grant
    Filed: April 21, 2011
    Date of Patent: September 12, 2017
    Inventor: Shahyaan Desai
  • Patent number: 9735537
    Abstract: A system includes N master oscillators to generate N master oscillator driving signals. The system includes N splitters to split each of the N master oscillator signals into M coherent signals with M being a positive integer greater than one. A modulator and fiber amplifier stage adjusts the relative phases of the M coherent signals and generates M×N amplified signals. The M×N amplified signals are aggregated into M clusters of N fibers. The system includes M spectral beam combination (SBC) modules to combine each of the M clusters. Each SBC module combines the M×N amplified signals at N wavelengths and generates M tiled output beams. Each SBC module employs a single dimensional (1D) fiber optic array to transmit one cluster of N amplified signals from the M signal clusters and generates one tiled output beam of the M tiled output beams.
    Type: Grant
    Filed: April 12, 2016
    Date of Patent: August 15, 2017
    Assignee: Northrop Grumman Systems Corporation
    Inventors: Joshua E. Rothenberg, Eric C. Cheung, Gregory D. Goodno
  • Patent number: 9735199
    Abstract: A light emitting device includes a substrate, light emitting cells, each of the light emitting cells including a light emitting structure including lower and upper semiconductor layers, an upper electrode, and a lower electrode, a conductive interconnection layer electrically connecting a lower electrode of a first one of the light emitting cells and an upper electrode of a second one of the light emitting cells, and a current blocking layer disposed to extend from between the upper electrode and the upper semiconductor layer, wherein each light emitting cell further includes a conductive layer arranged to electrically connect the upper electrode of the second light emitting cell to the upper semiconductor layer of the second light emitting cell.
    Type: Grant
    Filed: April 7, 2016
    Date of Patent: August 15, 2017
    Assignee: LG INNOTEK CO., LTD.
    Inventors: Byung Yeon Choi, Myeong Soo Kim, Hee Young Beom, Yong Gyeong Lee, Hyun Seoung Ju, Gi Seok Hong
  • Patent number: 9712245
    Abstract: Provided is an inexpensive and compact optical transmission module having high coupling efficiency between an optical fiber and a light projecting element and/or a light receiving element. This optical transmission module includes a lead frame including an electric wiring pattern formed therein, a resin housing formed through insert-molding of the lead frame, and an electric device mounted on the lead frame and including a light projecting element for photoelectric conversion. The lead frame forms a slit positioning an optical fiber to be coupled and a reflection mirror reflecting and condensing light from the light projecting element to the optical fiber.
    Type: Grant
    Filed: May 13, 2015
    Date of Patent: July 18, 2017
    Assignee: Hosiden Corporation
    Inventor: Takayuki Nagata
  • Patent number: 9711941
    Abstract: A monolithically integrated optical device. The device has a gallium and nitrogen containing substrate member having a surface region configured on either a non-polar or semi-polar orientation. The device also has a first waveguide structure configured in a first direction overlying a first portion of the surface region. The device also has a second waveguide structure integrally configured with the first waveguide structure. The first direction is substantially perpendicular to the second direction.
    Type: Grant
    Filed: December 22, 2015
    Date of Patent: July 18, 2017
    Assignee: Soraa Laser Diode, Inc.
    Inventor: James W. Raring
  • Patent number: 9698570
    Abstract: A quantum dot laser includes a GaAs substrate, a quantum dot active layer which has a barrier layer of GaAs and quantum dots, a GaAs waveguide core layer which is joined to the quantum dot active layer, and a lower cladding layer and an upper cladding layer which sandwich the quantum dot active layer and the GaAs waveguide core layer. The GaAs waveguide core layer extends from a front end of the quantum dot active layer and has a thickness which gradually decreases in a direction to depart from the front end of the quantum dot active layer, a refractive index of a first cladding layer is higher than a refractive index of a second cladding layer. With this structure, expansion of the optical mode diameter that is more than necessary is inhibited to prevent leakage of light, thereby obtaining sufficient optical output.
    Type: Grant
    Filed: July 8, 2016
    Date of Patent: July 4, 2017
    Assignee: FUJITSU LIMITED
    Inventors: Kazumasa Takabayashi, Tsuyoshi Yamamoto, Tokuharu Kimura
  • Patent number: 9667025
    Abstract: A fiber laser having a thermal controller operatively connected to one or more fiber Bragg gratings is provided. The thermal controller does not impart much or imparts very little mechanical stress or strain to the optical fiber in which the FBGs reside because such forces can alter the FBG performance. Rather, the thermal controller utilizes a thermally conductive semi-solid or non-Newtonian fluid to submerge/suspend a portion of the optical fiber in which FBG resides. Temperature control logic controls whether a thermoelectric heater and cooler should be directed to increase or decrease its temperature. The thermoelectric heater and cooler imparts or removes thermal energy from the FBG to efficiently control its performance without the application of mechanical stress. The fiber laser having a thermal controller generally is able to increase laser output power greater than two times the amount of output power of a similarly fabricated fiber laser free of the thermal controller(s).
    Type: Grant
    Filed: April 4, 2016
    Date of Patent: May 30, 2017
    Assignee: BAE Systems Information and Electronic Systems Integration Inc.
    Inventor: Benjamin R. Johnson
  • Patent number: 9651770
    Abstract: A variable wavelength interference filter includes a stationary substrate, a stationary reflecting film disposed on the entire surface of the stationary substrate opposed to a movable substrate, and formed of a multilayer film, a movable reflecting film opposed to the stationary reflecting film, and a first mirror electrode disposed on the stationary reflecting film.
    Type: Grant
    Filed: September 15, 2014
    Date of Patent: May 16, 2017
    Assignee: Seiko Epson Corporation
    Inventors: Susumu Shinto, Akira Sano
  • Patent number: 9647409
    Abstract: The present invention is applicable to the field of fiber laser technologies. In the present invention, two fiber lasers of different bands are used as seed sources to form a dual-band fiber laser that outputs beams of two bands simultaneously, and the dual-band fiber laser is used to pump the cascaded evolving assemblies.
    Type: Grant
    Filed: March 4, 2016
    Date of Patent: May 9, 2017
    Assignee: SHENZHEN UNIVERSITY
    Inventors: Chunyu Guo, Shuangchen Ruan, Huaiqin Lin, Liang Wen, Deqin Ouyang, Jun Yu
  • Patent number: 9632320
    Abstract: A semiconductor laser oscillator is formed by laser diodes arranged two-dimensionally in fast-axis and slow-axis directions. A laser beam emitted from the semiconductor laser oscillator is incident on a homogenizer. The homogenizer condenses the laser beam onto a long-length incident region at a surface to be irradiated. The homogenizer divides the laser beam into a plurality of beams with respect to a short-axis direction of the incident region, and superimposes the plurality of divided beams at the surface to be irradiated to cause the superimposed beams to be incident on the incident region. The slow-axis direction of the semiconductor laser oscillator is inclined with respect to a long-axis direction of the incident region.
    Type: Grant
    Filed: February 6, 2015
    Date of Patent: April 25, 2017
    Assignee: SUMITOMO HEAVY INDUSTRIES, LTD.
    Inventor: Kazumasa Shudo
  • Patent number: 9625727
    Abstract: Device for homogenizing a laser beam including a first substrate with a first lens array including a plurality of cylindrical lenses and a second substrate with a second cylindrical lens array, which is arranged in the beam path downstream of the first substrate and includes a plurality of cylindrical lenses. Exactly one of the cylindrical lenses of the second lens array is assigned to each of the cylindrical lenses of the first lens array. Center-to-center distances between the cylindrical lenses of the first lens array are greater than the center-to-center distances between the cylindrical lenses of the second lens array. A lens vertex of a central one of the cylindrical lenses of the first lens array is aligned with a lens vertex of a central one of the cylindrical lenses of the first lens array that is assigned thereto.
    Type: Grant
    Filed: March 7, 2014
    Date of Patent: April 18, 2017
    Assignee: LIMO PATENT VERWALTUNG GMBH & Co. KG.
    Inventor: Ingo Steiner
  • Patent number: 9595328
    Abstract: A state-changeable device includes a first and a second particle arranged in proximity to each other; and a coupling material between the first and the second particle; wherein the first and the second particle are adapted to provide a charge carrier distribution such that surface plasmon polaritons (SPP) occur; the coupling material is adapted to exhibit a variable conductivity in response to a trigger signal thereby changing an electro-optical coupling between the first and the second particle; and the first and the second particle are arranged in proximity to each other such that a first SPP configuration corresponds to a first electro-optical coupling between the first and the second particle and a second SPP configuration corresponds to a second electro-optical coupling between the first and the second particle.
    Type: Grant
    Filed: August 14, 2014
    Date of Patent: March 14, 2017
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventor: Emanuel Loertscher
  • Patent number: 9583671
    Abstract: Improved quantum efficiency of multiple quantum wells. In accordance with an embodiment of the present invention, an article of manufacture includes a p side for supplying holes and an n side for supplying electrons. The article of manufacture also includes a plurality of quantum well periods between the p side and the n side, each of the quantum well periods includes a quantum well layer and a barrier layer, with each of the barrier layers having a barrier height. The plurality of quantum well periods include different barrier heights.
    Type: Grant
    Filed: February 23, 2015
    Date of Patent: February 28, 2017
    Assignee: Invensas Corporation
    Inventors: Liang Wang, Ilyas Mohammed, Masud Beroz
  • Patent number: 9552993
    Abstract: A number of variations may include a method that may include depositing a first layer on a first semiconductor epi layer (epitaxial layer) in an overlying position with respect to at least one trench structure formed in the first semiconductor epi layer. The first layer may include a first metal and a second metal. A second layer may comprise a material constructed and arranged to scavenge silicon migrating from the first semiconductor epi layer during annealing may be deposited over the first layer. The first semiconductor epi layer may be subjected to at least a first annealing act to provide a first structure. At least a portion of the first structure may be stripped to remove any of the first layer not reacted with silicon to form a silicide during the first annealing act.
    Type: Grant
    Filed: August 29, 2014
    Date of Patent: January 24, 2017
    Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventors: Michael Thomason, Mohammed Tanvir Quddus, James Morgan, Mihir Mudholkar, Scott Donaldson, Gordon M Grivna
  • Patent number: 9543738
    Abstract: A low voltage laser device having an active region configured for one or more selected wavelengths of light emissions.
    Type: Grant
    Filed: September 16, 2010
    Date of Patent: January 10, 2017
    Assignee: SORAA LASER DIODE, INC.
    Inventors: James W. Raring, Mathew Schmidt, Christiane Poblenz
  • Patent number: 9509121
    Abstract: A semiconductor laser element includes: a semiconductor-layered structure including a waveguide core layer and having a distributed feedback laser portion and a distributed Bragg reflection portion, the waveguide core layer having a length continuous in an optical cavity length direction and a diffraction grating layer being disposed in vicinity of the waveguide core layer and along the waveguide core layer in the distributed feedback laser portion, and the waveguide core layer being disposed discretely and periodically to form a diffraction grating in the distributed Bragg reflection portion; and an electrode for injecting a current to the distributed feedback laser portion. The distributed feedback laser portion oscillates a laser light at a wavelength corresponding to a period of the diffraction grating layer. The diffraction grating formed by the waveguide core layer in the distributed Bragg reflection portion is set to have a stop band including the wavelength of the laser light.
    Type: Grant
    Filed: August 18, 2015
    Date of Patent: November 29, 2016
    Assignee: FURUKAWA ELECTRIC CO., LTD.
    Inventor: Go Kobayashi
  • Patent number: 9508957
    Abstract: An OLED may include regions of a material having a refractive index less than that of the substrate, or of the organic region, allowing for emitted light in a waveguide mode to be extracted into air. These regions can be placed adjacent to the emissive regions of an OLED in a direction parallel to the electrodes. The substrate may also be given a nonstandard shape to further improve the conversion of waveguide mode and/or glass mode light to air mode. The outcoupling efficiency of such a device may be up to two to three times the efficiency of a standard OLED. Methods for fabricating such a transparent or top-emitting OLED is also provided.
    Type: Grant
    Filed: March 31, 2008
    Date of Patent: November 29, 2016
    Assignee: The Regents of the University of Michigan
    Inventors: Stephen Forrest, Yiru Sun
  • Patent number: 9482815
    Abstract: A photonic device is manufactured by: (i) providing (e.g. by inkjet printing) an aliquot of a liquid crystal (LC) material; and (ii) depositing the aliquot onto the surface of a flowable material layer to form a liquid crystal deposit, the flowable material and the LC material being substantially immiscible. The liquid crystal deposit adopts a deformed shape relative to the shape of the aliquot due to interaction with the flowable material layer. This promotes alignment of the LC material. Incorporation of a laser dye allows the photonic device to function as a laser, which can be operated above or below threshold depending on the circumstances. The photonic device can also be used as a passive device based on the photonic bandgap of the aligned LC material.
    Type: Grant
    Filed: May 24, 2013
    Date of Patent: November 1, 2016
    Assignee: Johnson Matthey PLC
    Inventors: Harry Coles, Ian Hutchings, Damian Gardiner, Wen-Kai Hsiao, Philip Hands, Stephen Morris, Timothy Wilkinson
  • Patent number: 9482691
    Abstract: A new active optical Atomic Force Microscopy (AFM) probe integrating monolithically a semiconductor laser source, an AFM tip, and a photodetector into a robust, easy-to use single semiconductor chip to enable both conventional AFM measurements and optical imaging and spectroscopy at the nanoscale.
    Type: Grant
    Filed: January 8, 2016
    Date of Patent: November 1, 2016
    Assignee: ACTOPROBE, LLC
    Inventors: Alexander A. Ukhanov, Gennady A. Smolyakov
  • Patent number: RE46996
    Abstract: A method of manufacturing a laser diode array capable of inhibiting electric cross talk is provided. The method of manufacturing a laser diode array includes a processing step of forming a peel layer containing an oxidizable material and a vertical resonator structure over a first substrate sequentially from the first substrate side by crystal growth, and then selectively etching the peel layer and the vertical resonator structure to the first substrate, thereby processing into a columnar shape, a peeling step of oxidizing the peel layer from a side face, and then peeling the vertical resonator structure of columnar shape from the first substrate, and a rearrangement step of jointing a plurality of vertical resonator structures of columnar shape obtained by the peeling step to a surface of a metal layer of a second substrate formed with the metal layer on the surface.
    Type: Grant
    Filed: June 27, 2016
    Date of Patent: August 14, 2018
    Assignee: Sony Corporation
    Inventors: Osamu Maeda, Masaki Shiozaki, Takahiro Arakida