Abstract: A reflection filter device includes: a ring resonator filter including a ring-shaped waveguide and two arms, each of the two arms being optically coupled to the ring-shaped waveguide; and a dual-branch portion including a light input/output port and two branch ports, the light input/output port being configured to allow input and output of light, the two branch ports being configured to allow output of the light input from the light input/output port, the light being split into two, the two arms being connected to the two branch ports, respectively, at least one of the two arms being equipped with a phase adjuster.

Abstract: A semiconductor laser element includes: an n-side semiconductor layer formed of a nitride semiconductor; an active layer disposed on or above the n-side semiconductor layer and formed of a nitride semiconductor; a p-side semiconductor layer disposed on the active layer, formed of a nitride semiconductor, and including: an undoped first part disposed in contact with an upper face of the active layer and comprising at least one semiconductor layer, an electron barrier layer disposed in contact with an upper face of the first part, containing a p-type impurity, and having a band gap energy that is larger than a band gap energy of the first part, and a second part disposed in contact with the upper face of the electron barrier layer and comprising at least one p-type semiconductor layer containing a p-type impurity; and a p-electrode disposed in contact with the upper face of the second part.

Abstract: A light emission device of one embodiment reduces zero-order light included in output of an S-iPM laser. The light emission device includes a light emission unit and a phase modulation layer. The phase modulation layer has a base layer and modified refractive index regions each including modified refractive index elements. In each unit constituent region centered on a lattice point of an imaginary square lattice set on the phase modulation layer, the distance from the corresponding lattice point to each of the centers of gravity of the modified refractive index elements is greater than 0.30 times and is not greater than 0.50 times of the lattice spacing. In addition, the distance from the corresponding lattice point to the center of gravity of the modified refractive index elements as a whole is greater than 0 and is not greater than 0.30 times of the lattice spacing.

Abstract: The present disclosure provides a laser diode package module. The laser diode package module includes a substrate including a first surface; a cover disposed on the first surface of the substrate; an accommodation space formed between the substrate and the cover; a laser diode die disposed in the accommodation space; and a reflective surface disposed in the accommodation space for outputting light of the laser diode die reflected by the reflective surface and transmitted through a light-transmitting area. The light-transmitting area is at least partially disposed on a surface of the cover opposite the substrate.

Abstract: Various designs of semiconductor lasers may comprise a waveguide having a front region that is configured to support a plurality of transverse laser cavity modes and a rear region that support only one transverse laser cavity mode. These front and rear regions may be disposed between front and rear reflectors and may provide optical gain. Some such designs may be useful for providing higher power single mode semiconductor lasers.

Abstract: A micro light-emitting device, including a first type semiconductor layer, a light-emitting layer, a second type semiconductor layer, a first type electrode, a second type electrode, and a light reflection layer, is provided. The light-emitting layer is arranged on the first type semiconductor layer. The second type semiconductor layer is arranged on the light-emitting layer. The first type electrode and the second type electrode are both arranged on the second type semiconductor layer. The light reflection layer is arranged between the light-emitting layer and the first type electrode. The light reflection layer includes an oxidized area and a non-oxidized area. A reflectance of the oxidized area is greater than a reflectance of the non-oxidized area. An orthographic projection of a part of the oxidized area on the first type semiconductor layer and an orthographic projection of the first type electrode on the first type semiconductor layer at least partially overlap.

Abstract: A light-source device includes an excitation light source; a wavelength conversion unit to convert at least some of first color light into second color light; a light mixing element including a rod integrator to mix at least one of the first color light and the second color light from the conversion unit; and an optical element on an optical path of the first color light and having a reflecting surface. A center of the first color light on the reflecting surface intersects with only one of a first light flux of the first color light incident on and a second light flux of the first color light emitted from the conversion unit. An angle formed by a projection straight line of the first color light incident on an incident aperture of the integrator and a predetermined axial line of the incident aperture of the integrator is smaller than 40°.

Abstract: The present disclosure relates to a diode laser having reduced beam divergence. Some implementations reduce a beam divergence in the far field by means of a deliberate modulation of the real refractive index of the diode laser. An area of the diode laser (e.g., the injection zone), may be structured with different materials having different refractive indices. In some implementations, the modulation of the refractive index makes it possible to excite a supermode, the field of which has the same phase (in-phase mode) under the contacts. Light, which propagates under the areas of a lower refractive index, obtains a phase shift of ? after passing through the index-guiding trenches. Consequently, the in-phase mode is supported and the formation of the out-of-phase mode is prevented. Consequently, the laser field can, in this way, be stabilized even at high powers such that only a central beam lobe remains in the far field.

Abstract: A light source device includes: first and second laser diodes; a reflector having: first and second reflecting faces configured to reflect a portion of light from the respective first and second laser diodes and to transmit a portion of the light from the respective first and second laser diodes, and first and second exit faces configured to allow the portions of the light transmitted through the respective first and second reflecting faces to exit; and a photodetector including: first and second light receiving element configured to receive light exiting the first and second exit faces, respectively. The reflector is configured such that the light transmitted through the first reflecting face is hindered from exiting the second exit face and the light transmitted through the second reflecting face is hindered from exiting the first exit face.

Abstract: A red-light emitting diode includes an n-doped portion, a p-doped portion, and a light emitting region located between the n-doped portion and a p-doped portion. The light emitting region includes a light-emitting indium gallium nitride layer emitting light at a peak wavelength between 600 and 750 nm under electrical bias thereacross, an aluminum gallium nitride layer located on the light-emitting indium gallium nitride layer. and a GaN barrier layer located on the aluminum gallium nitride layer.

Abstract: A quantum computer includes a quantum processor that includes a first plurality of qubits arranged in a hexagonal lattice pattern such that each is substantially located at a hexagon apex, and a second plurality of qubits each arranged substantially along a hexagon edge. Each of the first plurality of qubits is coupled to three nearest-neighbor qubits of the second plurality of qubits, and each of the second plurality of qubits is coupled to two nearest-neighbor qubits of the first plurality of qubits. Each of the second plurality of qubits is a control qubit at a control frequency. Each of the first plurality of qubits is a target qubit at one of a first target frequency or a second target frequency. The quantum computer includes an error correction device configured to operate on the hexagonal lattice pattern of the plurality of qubits so as to detect and correct data errors.

Abstract: A light-source device includes an excitation light source; a wavelength conversion unit to convert at least some of first color light into second color light; a light mixing element including a rod integrator to mix at least one of the first color light and the second color light from the conversion unit; and an optical element on an optical path of the first color light and having a reflecting surface. A center of the first color light on the reflecting surface intersects with only one of a first light flux of the first color light incident on and a second light flux of the first color light emitted from the conversion unit. An angle formed by a projection straight line of the first color light incident on an incident aperture of the integrator and a predetermined axial line of the incident aperture of the integrator is smaller than 40°.

Abstract: A distance measuring apparatus has a substrate supporting, on a first surface thereof, a light source that emits light and a first optical element that decreases the intensity of the emitted light, and a processor on a second surface opposite the first surface. A light receiving element and a second optical element, which is at a higher position than the light receiving element, both receive the emitted light after reflecting from an object. A frame is connected to the substrate and spaces the first optical element and the second optical element a predetermined distance apart from the light source and the light receiving element, and a partition is disposed between the light source and the light receiving element, thereby defining a first cavity housing the light source and a second cavity housing the light receiving element. The processor is electrically connected to the light source and controls the light source.

Abstract: A CMOS inverter circuit is provided as a circuit to modulate a current flowing into a laser diode on the basis of a digital signal. An amplitude of a current flowing in a PMOSFET in the CMOS inverter circuit is made to contribute to an amplitude of the current flowing into the laser diode, to reduce an input amplitude.

Abstract: Edge-emitting laser diodes having mirror facets include passivation coatings that are conditioned using an ex-situ process to condition the insulating material used to form the passivation layer. An external energy source (laser, flash lamp, e-beam) is utilized to irradiate the material at a given dosage and for a period of time sufficient to condition the complete thickness of passivation layer. This ex-situ laser treatment is applied to the layers covering both facets of the laser diode (which may comprise both the passivation layers and the coating layers) to stabilize the entire facet overlay. Importantly, the ex-situ process can be performed while the devices are still in bar form.

Abstract: A light emitting device includes a package defining a recess, a cap and at least one laser element. The cap is fixed to the package so as to cover the recess. The cap includes a light-transmissive member having a lower surface facing the package and an upper surface, the lower surface having a light extraction region, and a light blocking film arranged on the lower surface so as to avoid the light extraction region, the light blocking film including a mark representing prescribed information. The at least one laser element is disposed in a space bounded by the cap and the package at a prescribed position such that the light extraction region is irradiated by laser light emitted from the at least one laser element. At least a part of the at least one laser element overlaps at least a part of the light blocking film in a top view.

Abstract: A lighting device comprises a substrate including an active area; a first electrode disposed on the substrate and including a transparent conductive material; an organic material layer disposed on the first electrode and including a first light emitting layer and a second light emitting layer; and a second electrode disposed on the organic material layer and including a reflective material, wherein the first light emitting layer emits light having a first wavelength and the second light emitting layer emits light having a second wavelength, and wherein the second light emitting layer includes a first dopant absorbing the light having the first wavelength and emitting the light having the second wavelength.

Abstract: The present embodiment relates to a light-emitting device or the like having a structure capable of reducing one power of ±1st-order light with respect to the other power. The light-emitting device includes a substrate, a light-emitting portion, and a phase modulation layer including a base layer and a plurality of modified refractive index regions. Each of the plurality of modified refractive index regions has a three-dimensional shape defined by a first surface facing the substrate, a second surface positioned on a side opposite to the substrate with respect to the first surface, and a side surface. In the three-dimensional shape, at least one of the first surface, the second surface, and the side surface has a portion inclined with respect to a main surface.

Abstract: A power sourcing equipment (PSE) device of an optical power supply system includes a semiconductor laser that oscillates with electric power, thereby outputting feed light. The semiconductor laser includes a semiconductor region exhibiting a light-electricity conversion effect. A semiconductor material of the semiconductor region is a laser medium having a laser wavelength of 500 nm or less. A powered device of the optical power supply system includes a photoelectric conversion element that converts feed light into electric power. The photoelectric conversion element includes a semiconductor region exhibiting a light-electricity conversion effect. A semiconductor material of the semiconductor region is a laser medium having a laser wavelength of 500 nm or less.

Abstract: An optical apparatus includes a light emitting device and a substrate. The light emitting device includes a base including a main body portion containing a ceramic material and wire portions exposed from the main body portion on the lower surface of the base, a lid portion fixed to the base so that a hermetically sealed space is defined by the lid portion and the base, a first semiconductor laser element emitting blue light and provided in the hermetically sealed space, a second semiconductor laser element emitting red light and provided in the hermetically sealed space, a third semiconductor laser element emitting green light and provided in the hermetically sealed space, and a collimate lens arranged on paths of the blue light, the red light and the green light. The substrate includes first metallic films electrically connected with the base of the light emitting device via the wire portions.

Abstract: A semiconductor device includes a semiconductor substrate having a first surface, a second surface opposite to the first surface, and having a first recess portion formed on the first surface, a first cladding layer located in the first recess portion, and a first optical waveguide formed on the first cladding layer. The first optical waveguide overlaps with the first cladding layer in plan view.

Abstract: An optical module includes: an optical component; a base portion on which the optical component is mounted; a housing that includes sidewalls extending from the base portion in a height direction to surround the base portion; a cover member that defines, along with the housing, an accommodation space in which the optical component is disposed; and a resin for fixing the housing to the cover member. The cover member includes: an opposing surface that faces the base portion of the housing in the height direction; a first lateral cover surface extending along the height direction; and a second lateral cover surface extending in the height direction. The second lateral cover surface is disposed on an opposite side of the first lateral cover surface.

Abstract: A semiconductor light emitting element includes: an n-type semiconductor layer made of an n-type aluminum gallium nitride (AlGaN)-based semiconductor material provided on a substrate; an active layer made of an AlGaN-based semiconductor material provided on the n-type semiconductor layer; a p-type semiconductor layer provided on the active layer; and a covering layer made of a dielectric material that covers the n-type semiconductor layer, the active layer, and the p-type semiconductor layer. Each of the active layer and the p-type semiconductor layer has a sloped surface that is sloped at a first angle with respect to the substrate and is covered by the covering layer. The n-type semiconductor layer has a sloped surface that is sloped at a second angle larger than the first angle with respect to the substrate and is covered by the covering layer.

Abstract: A composite substrate including a substrate and an aluminum nitride layer is provided. The aluminum nitride layer is disposed on a top surface of the substrate. Silicon is doped in the aluminum nitride layer to regulate residual stress, a film thickness of the aluminum nitride layer is less than 3.5 ?m, a defect density of the aluminum nitride layer is less than or equal to 5×109/cm2, and a root mean square roughness of the top surface, facing away from the substrate, of the aluminum nitride layer is less than 3 nm. A manufacturing method of a composite substrate is also provided.

Abstract: A semiconductor substrate is provided in the present disclosure. The semiconductor substrate includes a first semiconductor layer and a second semiconductor layer on the first semiconductor layer. The first semiconductor layer has a first lattice constant (L1) and the second semiconductor layer has a second lattice constant (L2). A ratio of a difference (L2-L1) between the second lattice constant (L2) and the first lattice constant (L1) to the first lattice constant (L1) is greater than 0.036.

Abstract: A method of separating a wafer including rows of light emitting devices is described. Dicing streets are provided on the wafer such that a respective one of the dicing streets is provided between each of the rows of light emitting devices on the wafer. The wafer is broken along a first one of the dicing streets to separate a first portion of the wafer from a remaining portion of the wafer. The first portion of the wafer includes more than one of the rows of light emitting devices. The first portion of the wafer is broken along a second one of the dicing streets to separate a second portion of the wafer from the first portion of the wafer.

Abstract: A laser beam apparatus can include a set of pulsed lasers (e.g. solid state fiber lasers), a controllable beam deflector, and an electric power supply and controller connected to the beam deflector. The laser pulses from the different pulsed lasers can be configured to hit the beam deflector at different angles and different times. The electric power supply and controller can be configured to control and synchronize the timing and angle at which the different lasers pulses hit the beam deflector with an adjustment of the deflection property of the beam deflector so that the laser pulses from different input directions propagate in the same direction after passing through the beam deflector. The laser pulses from the lasers can be combined together via this control and synchronization.

Abstract: A nitride semiconductor laser device at least includes a ridge part disposed on a second-conductivity-type semiconductor layer, a conductive oxide layer covering the upper surface of the ridge part and portions of opposite side surfaces of the ridge part, a dielectric layer covering a portion of the conductive oxide layer, and a first metal layer covering the conductive oxide layer and the dielectric layer, wherein a portion of the conductive oxide layer disposed on the upper surface of the ridge part is exposed through the dielectric layer and covered with the first metal layer.

Abstract: Disclosed are methods and apparatus for hermetically sealing a nonlinear optical (NLO) crystal for use in a laser system. A mounted NLO crystal, an enclosure base, a lid, and a plurality of window components are moved into an oven. A vacuum bake process is then performed on the mounted NLO crystal, enclosure base, lid, and plurality of window components until a humidity level that is less than a predefined amount is reached. The mounted NLO crystal, enclosure base, lid, and plurality of window components are moved from the oven onto a stage of a glove box that includes a sealing tool. In the glove box, the mounted NLO crystal is hermetically sealed into the enclosure base by sealing the lid and plurality of window components into openings of the enclosure base.

Abstract: A light emitting device includes a base; a plurality of semiconductor laser elements disposed on the base and configured to emit light laterally from the plurality of semiconductor laser elements; a reflecting member disposed on the base and configured to reflect light from the semiconductor laser elements; a surrounding part disposed on the base and surrounding the semiconductor laser elements and the reflecting member; a wiring part disposed on the base so as to extend to a location outside of the surrounding part; a radiating body disposed on the surrounding part and having an opening; and a wavelength converting member that is located in the opening of the radiating body, the wavelength converting member being configured to convert a wavelength of light that is emitted from the plurality of semiconductor laser elements and reflected upward by the reflecting member.

Abstract: Disclosed is a battery resistance estimation apparatus.

Abstract: A laser device has a photonic crystal surface emitting laser (PCSEL) element. At a first lateral side of the PCSEL element, a reflector is arranged to reflect back into the PCSEL element at least a portion of light travelling out of the PCSEL element through the first lateral side of the PCSEL element. Between the first lateral side of the PCSEL element and the reflector there is interposed an electrically controllable light-transmission region configured to control the transmission of light from the PCSEL element to the reflector, based on an electrical input. Also disclosed is a method of operation of a corresponding laser device.

Abstract: A semiconductor device manufacturing method includes: forming an electrode including an Ni layer and an Au layer successively stacked on a semiconductor layer; forming a Ni oxide film by performing heat treatment to the electrode at a temperature of 350° C. or more to deposit Ni at least at a part of a surface of the Au layer and to oxidize the deposited Ni; and forming an insulating film in contact with the Ni oxide film and containing Si.

Abstract: The present invention is directed to a laser light source.

Abstract: An optoelectronic semiconductor device and a method for manufacturing an optoelectronic semiconductor device are disclosed. In an embodiment an optoelectronic semiconductor device includes a semiconductor body comprising a first region of a first conductive type, an active region, a second region of a second conductive type and a coupling-out surface, wherein the first region, the active region and the second region are arranged along a stacking direction, wherein the active region extends from a rear surface opposite the coupling-out surface to the coupling-out surface along a longitudinal direction transverse to or perpendicular to the stacking direction, wherein the coupling-out surface is arranged plane-parallel to the rear surface, and wherein the coupling-out surface and the rear surface of the semiconductor body are produced by an etching process.

Abstract: Reliability of a semiconductor device is improved. A method of manufacturing a semiconductor device includes a step of preparing a lead frame in which a plurality of device forming regions are arranged in a matrix, a die bonding step of mounting a semiconductor chip on each device region, a resin sealing step of individually covering each semiconductor chip with a sealing body, and a lead plating step of plating an outer portion of a lead exposed from the sealing body. Between the resin sealing step and the lead plating step, an inspection step for detecting defective products in the resin sealing step and a defective product removal step for removing a device region of defective products are provided.

Abstract: A semiconductor laser diode includes a semiconductor layer sequence with an active layer having a main extension plane and that generates light in an active region and emits light via a light outcoupling surface during operation, wherein the active region extends from a rear surface opposite the light outcoupling surface to the light outcoupling surface along a longitudinal direction, the semiconductor layer sequence includes a trench structure having at least one trench or a plurality of trenches on at least one side laterally next to the active region, and each trench of the trench structure extends in a longitudinal direction and projects from a top side of the semiconductor layer sequence in a vertical direction into the semiconductor layer sequence, and the trench structure varies in a lateral and/or vertical and/or longitudinal direction with respect to properties of the at least one trench or the plurality of trenches.

Abstract: A semiconductor laser device includes: a first conductivity side semiconductor layer, an active layer; and a second conductivity side semiconductor layer. The second conductivity side semiconductor layer includes a first semiconductor layer and a second semiconductor layer, the first semiconductor layer being closer to the active layer than the second semiconductor layer is. The second semiconductor layer defines a width of a current injection region for injecting current into an optical waveguide. The current injection region includes a width varying region in which a width varies. S1>S2, where S1 denotes a width of the width varying region on a front end face side, and S2 denotes a width of the width varying region on a rear end face side.

Abstract: A vertical cavity surface emitting laser includes: an active layer including a quantum well structure including one or more well layers including a III-V compound semiconductor containing indium as a group III constituent element; an upper laminated region containing a carbon dopant; and a substrate for mounting a post including the active layer and the upper laminated region, in which the active layer is provided between the upper laminated region and the substrate, the quantum well structure has a carbon concentration of 2×1016 cm?3 or less, and the upper laminated region includes a pile-up layer of indium at a position away from the active layer.

Abstract: An optical device includes a rectangular parallelepiped prism including a reflection-transmission surface for reflecting and transmitting light fluxes, a seating surface provided so that a bottom surface of the prism is fixed by an adhesive, and a groove portion provided in a part of the periphery of the seating surface. When the prism is fixed to the seating surface by the adhesive, the groove portion is configured to be capable of receiving the adhesive protruded from between the bottom surface of the prism and the seating surface when the prism is pressed against a first positioning member for determining a position of the prism so that a first side face of the prism is along a predetermined straight line and against a second positioning member for restricting a second side face orthogonal to the first side face of the prism from moving in the direction of the straight line.

Abstract: An object to provide a photonic crystal capable of resonating light at more resonant frequencies within a particular frequency range. A plurality of photonic crystal structure formation bodies each including a plate-like member in which cyclic refractive index distribution is formed are provided so as to be spaced apart from each other in the thickness direction of the plate-like member, and the respective refractive index distributions of the plurality of photonic crystal structure formation bodies are set such that: at least one of the plurality of photonic crystal structure formation bodies resonates with light having at least two frequencies within the frequency range; and the two frequencies are different from resonant frequencies of at least one of the other photonic crystal structure formation bodies.

Abstract: A number of beams that can be coupled into an optical fiber can be increased using emitted beams having greater divergence, thus providing increased beam power. Alternatively, with a fixed number of emitters, total optical power can be maintained with fewer beams in an output beam with a smaller numerical aperture.

Abstract: Laser diode submounts include a SiC substrate on which a thick conductive layer is supplied to use in mounting a laser diode. The thick conductive layer is typically gold or copper, and can be electrically coupled to a base laser that is used to define laser diode couplings.

Abstract: A thin film, flexible optoelectronic device is described. In an aspect, a method for fabricating a single junction optoelectronic device includes forming a p-n structure on a substrate, the p-n structure including a semiconductor having a lattice constant that matches a lattice constant of substrate, the semiconductor including a dilute nitride, and the single-junction optoelectronic device including the p-n structure; and separating the single-junction optoelectronic device from the substrate. The dilute nitride includes one or more of GaInNAs, GaInNAsSb, alloys thereof, or derivatives thereof.

Abstract: A laser bar includes a semiconductor layer including a plurality of layers and includes an active zone, wherein the active zone is arranged in an x-y-plane, laser diodes each form a mode space in an x-direction between two end faces, the mode spaces of the laser diodes are arranged alongside one another in a y-direction, a trench is provided in the semiconductor layer between two mode spaces, the trenches extend in the x-direction, and the trenches extend from a top side of the semiconductor layer in a z-direction to a predefined depth in the direction of the active zone.

Abstract: A light emitting device includes a base defining a recess, a lid portion, first and second semiconductor laser elements, and a collimate lens. The lid portion covers the recess so that a hermetically sealed space is defined by the lid portion and the base, the lid portion having a bottom surface fixed to the base and a top surface opposite to the bottom surface. The first and second semiconductor laser elements are provided in the hermetically sealed space. The first and second semiconductor laser elements respectively irradiate first and second lights having first and second peak wavelengths in a visible range. The collimate lens is fixed on the top surface of the lid portion with an adhesive. The collimate lens has a plurality of lens portions including a first lens portion through which the first light passes, and a second lens portion through which the second light passes.

Abstract: A light steering apparatus is provided including a tunable laser source and a system including the light steering apparatus. The light steering apparatus includes the tunable laser source and a steering device. A plurality of laser beams having optical coherence with each other and output from the tunable laser source are incident onto the steering device, and the steering device includes a plurality of modulation units for beam steering.

Abstract: A method of forming a light emitting device includes forming a growth mask layer including openings on a doped compound semiconductor layer, forming first light emitting diode (LED) subpixels by forming a plurality of active regions and second conductivity type semiconductor material layers employing selective epitaxy processes, and transferring each first LED subpixel to a backplane. An anode contact electrode may be formed on the second conductivity type semiconductor material layers for redundancy. The doped compound semiconductor layer may be patterned with tapered sidewalls to enhance etendue. An optically clear encapsulation matrix may be formed on the doped compound semiconductor material layer to enhance etendue. Lift-off processes may be employed for the active regions. Cracking of the LEDs may be suppressed employing a thick reflector layer.

Abstract: The purpose of the present invention is to provide a laser light source module that is capable of heat dissipation from a laser device and of suppressing the diffusion of a light beam due to the close arrangement of the laser device. The laser light source module comprises a stem that is a base plate and first and second laser assemblies disposed on the stem. Each of the laser assemblies comprises a multi-emitter LD bar that is a laser device emitting a laser light along an optical axis, and a holding member having a mounting surface parallel to the axis, the multi-emitter LD bar being mounted on the mounting surface. The first and second laser assemblies are positioned such that the optical axes of the assemblies are parallel to each other and that the mounting surfaces of the assemblies are arranged opposite to each other in parallel.

Abstract: A method of manufacturing a laser diode array capable of inhibiting electric cross talk is provided. The method of manufacturing a laser diode array includes a processing step of forming a peel layer containing an oxidizable material and a vertical resonator structure over a first substrate sequentially from the first substrate side by crystal growth, and then selectively etching the peel layer and the vertical resonator structure to the first substrate, thereby processing into a columnar shape, a peeling step of oxidizing the peel layer from a side face, and then peeling the vertical resonator structure of columnar shape from the first substrate, and a rearrangement step of jointing a plurality of vertical resonator structures of columnar shape obtained by the peeling step to a surface of a metal layer of a second substrate formed with the metal layer on the surface.