Injection Patents (Class 372/44.01)
  • Patent number: 11381057
    Abstract: A light source device includes: a laser diode configured to emit laser light; a substrate directly or indirectly supporting the laser diode; a glass cap secured to the substrate and covering the laser diode, the glass cap comprising a front glass wall configured to transmit the laser light that is emitted from the laser diode, the front glass wall having an incident surface on which the laser light is incident and an emission surface from which the laser light exits; and a photodetector directly or indirectly supported by the substrate and located outside of the glass cap. The photodetector is configured to detect light reflected at the front glass wall and is transmitted through the glass cap.
    Type: Grant
    Filed: October 1, 2020
    Date of Patent: July 5, 2022
    Assignee: NICHIA CORPORATION
    Inventor: Tadaaki Miyata
  • Patent number: 11283235
    Abstract: A semiconductor laser device may include a first cladding on a substrate, an optical waveguide on the first cladding, a laser light source chip on the optical waveguide to generate a laser beam, a first adhesive layer between the optical waveguide and the laser light source chip, and a second adhesive layer covering a sidewall of the laser light source chip.
    Type: Grant
    Filed: August 12, 2019
    Date of Patent: March 22, 2022
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Pil-Kyu Kang, Seok-Ho Kim, Tae-Yeong Kim, Hoe-Chul Kim, Hoon-Joo Na
  • Patent number: 11228158
    Abstract: The present disclosure provides a method and structure for producing large area gallium and nitrogen engineered substrate members configured for the epitaxial growth of layer structures suitable for the fabrication of high performance semiconductor devices. In a specific embodiment the engineered substrates are used to manufacture gallium and nitrogen containing devices based on an epitaxial transfer process wherein as-grown epitaxial layers are transferred from the engineered substrate to a carrier wafer for processing. In a preferred embodiment, the gallium and nitrogen containing devices are laser diode devices operating in the 390 nm to 425 nm range, the 425 nm to 485 nm range, the 485 nm to 550 nm range, or greater than 550 nm.
    Type: Grant
    Filed: May 14, 2019
    Date of Patent: January 18, 2022
    Assignee: KYOCERA SLD Laser, Inc.
    Inventors: Melvin McLaurin, James W. Raring
  • Patent number: 11217963
    Abstract: A photonic die includes an optical component that can emit output light. The optical component includes a substrate having a length and width that are substantially greater than a thickness thereof, the thickness defining a vertical direction. The optical component includes a vertical edge, and a reflective or antireflective coating on the vertical edge, wherein the reflective or antireflective coating includes a silicon-based material.
    Type: Grant
    Filed: November 27, 2019
    Date of Patent: January 4, 2022
    Assignee: Skorpios Technologies, Inc.
    Inventors: Murtaza Askari, Stephen B. Krasulick
  • Patent number: 11195721
    Abstract: Ohmic contacts, including materials and processes for forming n-type ohmic contacts on n-type semiconductor substrates at low temperatures, are disclosed. Materials include reactant layers, n-type dopant layers, capping layers, and in some instances, adhesion layers. The capping layers can include metal layers and diffusion barrier layers. Ohmic contacts can be formed on n-type semiconductor substrates at temperatures between 150 and 250° C., and can resist degradation during operation.
    Type: Grant
    Filed: January 14, 2019
    Date of Patent: December 7, 2021
    Assignee: Princeton Optronics, Inc.
    Inventors: Guoyang Xu, Jean-Francois Seurin, Chuni Ghosh
  • Patent number: 11187852
    Abstract: Structures that include a Bragg grating and methods of fabricating a structure that includes a Bragg grating. The structure includes a waveguide core and a Bragg grating having a plurality of segments positioned with a spaced arrangement adjacent to the waveguide core. Each segment includes one or more exterior surfaces. The structure further includes a silicide layer located on the one or more exterior surfaces of each segment.
    Type: Grant
    Filed: January 28, 2021
    Date of Patent: November 30, 2021
    Assignee: GLOBALFOUNDRIES U.S. INC.
    Inventors: Yusheng Bian, Domingo Ferrer, Roderick A. Augur, Michal Rakowski
  • Patent number: 11189752
    Abstract: A process for producing a structure (100) comprising a membrane (3) of a first material, in particular indium-tin oxide, in contact with receiving ends (13) of a plurality of nanowires (1), the process comprising forming a nanowire device (10) comprising the receiving ends (13), the receiving ends being formed so as to form planar surfaces, and (ii) placing, especially by transfer, a membrane device (3; 34) directly on the nanowires the planar surfaces of the ends for receiving the membrane.
    Type: Grant
    Filed: March 19, 2018
    Date of Patent: November 30, 2021
    Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Bruno Daudin, Marc Delaunay
  • Patent number: 11139637
    Abstract: A multi-wavelength light emitting device is manufactured by forming first and second epitaxial materials overlying first and second surface regions. The first and second epitaxial materials are patterned to form a plurality of first and second epitaxial dice. At least one of the first plurality of epitaxial dice and at least one of the second plurality of epitaxial dice are transferred from first and second substrates, respectively, to a carrier wafer by selectively etching a release region, separating from the substrate each of the epitaxial dice that are being transferred, and selectively bonding to the carrier wafer each of the epitaxial dice that are being transferred. The transferred first and second epitaxial dice are processed on the carrier wafer to form a plurality of light emitting devices capable of emitting at least a first wavelength and a second wavelength.
    Type: Grant
    Filed: April 9, 2020
    Date of Patent: October 5, 2021
    Assignee: KYOCERA SLD Laser, Inc.
    Inventors: Melvin McLaurin, Alexander Sztein, Po Shan Hsu, Eric Goutain, James W. Raring, Paul Rudy, Vlad Novotny
  • Patent number: 11121524
    Abstract: A semiconductor device according to the present technology includes a first semiconductor layer; a second semiconductor layer; an active layer; and a transparent conductive layer. The first semiconductor layer has a first conductivity type, a stripe-shaped ridge being formed on a surface of the first semiconductor layer. A second width is 0.99-1.0 times a first width, a third width is 0.96-1.0 times the second width, and the transparent conductive layer has a uniform thickness within a range of 90% to 110% in a range of the third width, the first width being a width in a direction perpendicular to an extending direction of the ridge, the second width being a width in the direction on a surface of the transparent conductive layer on a side of the ridge, the third width being a width in the direction on a surface opposite to the ridge of the transparent conductive layer.
    Type: Grant
    Filed: September 15, 2017
    Date of Patent: September 14, 2021
    Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventor: Masahiro Murayama
  • Patent number: 11088353
    Abstract: The disclosure recites a solid-state total reflection display and a manufacture method thereof, and a display device. The solid-state total reflection display includes: a drive circuit layer, and a heating layer and a pixel function layer stacked successively on the drive circuit layer; a plurality of pixel structures in the pixel function layer are arranged in an array, and the pixel structures each includes a reflection layer, a resonant cavity layer, a phase change material layer and a transparent covering layer stacked successively; a plurality of light adjusting structures are arranged between two adjacent pixel structures among the plurality of pixel structures in a row or column direction of the array; a side of each light adjusting structure towards an ambient light-entering side of the solid-state total reflection display is in a concave shape.
    Type: Grant
    Filed: October 31, 2019
    Date of Patent: August 10, 2021
    Assignee: SHANGHAI TIANMA MICRO-ELECTRONICS CO., LTD.
    Inventors: Yongli Jiang, Feng Lu
  • Patent number: 10978429
    Abstract: Embodiments relate to mass-transfer methods useful for fabricating products containing Light Emitting Diode (LED) structures. LED arrays are transferred from a source substrate to a target substrate by beam-assisted release (BAR) of a plurality of LED devices in a high-speed flexible manner. The BAR mass-transfer approach is also able to utilize a Known Good Die (KGD) data file of the source substrate to transfer only functionally good die and avoid rework and yield losses.
    Type: Grant
    Filed: June 26, 2018
    Date of Patent: April 13, 2021
    Assignee: Apple Inc.
    Inventor: Francois J. Henley
  • Patent number: 10978855
    Abstract: A quantum cascade semiconductor laser includes a laser structure having a first area including an end face, a second area, and a third area; a metal layer provided on a major surface in the third area; a separation area provided on the major surface; and a reflector provided on the laser structure. The reflector includes a dielectric film and a metal reflecting film provided on the end face and the separation area. The separation area has a first portion, a second portion, and a third portion. The metal layer has an edge separated from the end face in the third area. The contact layer has an edge separated from the end face in the third area. The first portion projects more than the second portion over the semiconductor mesa. The third portion projects more than the second portion over the semiconductor mesa.
    Type: Grant
    Filed: August 14, 2019
    Date of Patent: April 13, 2021
    Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventor: Hiroyuki Yoshinaga
  • Patent number: 10950652
    Abstract: Disclosed herein is a light-emitting device.
    Type: Grant
    Filed: July 17, 2018
    Date of Patent: March 16, 2021
    Assignee: EPISTAR CORPORATION
    Inventors: Chien-Fu Shen, Chao-Hsing Chen, Tsun-Kai Ko, Schang-Jing Hon, Sheng-Jie Hsu, De-Shan Kuo, Hsin-Ying Wang, Chiu-Lin Yao, Chien-Fu Huang, Hsin-Mao Liu, Chien-Kai Chung
  • Patent number: 10866375
    Abstract: A light source device and an electronic apparatus are provided. The light source device includes a substrate, an electrode layer and a surrounding frame disposed on the substrate, a light emitter and a light detector mounted on the electrode layer and located inside of the surrounding frame, and a light permeable member disposed on the surrounding frame and covering the light emitter and the light detector. When the light emitter receives a predetermined current so as to emit an invisible light toward the light permeable member, the light detector receives a reflected part of the invisible light to generate an initial photocurrent. When the light emitter receives a manipulation current so that a detection photocurrent generated from the light detector is less than a first proportion of the initial photocurrent or greater than a second proportion of the initial photocurrent, the light emitter stops receiving the manipulation current.
    Type: Grant
    Filed: August 8, 2019
    Date of Patent: December 15, 2020
    Assignees: LITE-ON OPTO TECHNOLOGY (CHANGZHOU) CO., LTD., LITE-ON TECHNOLOGY CORPORATION
    Inventors: Hsin-Wei Tsai, I-Ju Chen, Hou-Yen Tsao, Shu-Hua Yang, Yu-Hung Su
  • Patent number: 10826276
    Abstract: A semiconductor laser including an active zone and a waveguide, wherein the active zone includes an active layer configured to generate electromagnetic radiation during operation of the semiconductor laser, the waveguide is configured to guide the electromagnetic radiation generated during operation of the semiconductor laser within the semiconductor laser, the waveguide includes a subregion formed from a compound semiconductor material, wherein a proportion of a material of the compound semiconductor material gradually increases in the entire subregion along the vertical direction toward the active zone so that a refractive index of the subregion gradually decreases toward the active zone, and the proportion is an aluminum proportion or a phosphorus proportion.
    Type: Grant
    Filed: November 15, 2017
    Date of Patent: November 3, 2020
    Assignee: OSRAM OLED GmbH
    Inventors: Christian Lauer, Tomasz Swietlik
  • Patent number: 10826275
    Abstract: A light emitting element includes a laminated structure formed by laminating a first light reflecting layer 41, a light emitting structure 20, and a second light reflecting layer 42. The light emitting structure 20 is formed by laminating, from the first light reflecting layer side, a first compound semiconductor layer 21, an active layer 23, and a second compound semiconductor layer 22. In the laminated structure 20, at least two light absorbing material layers 51 are formed in parallel to a virtual plane occupied by the active layer 23.
    Type: Grant
    Filed: June 13, 2017
    Date of Patent: November 3, 2020
    Assignee: SONY CORPORATION
    Inventors: Tatsushi Hamaguchi, Shoichiro Izumi, Susumu Sato, Noriyuki Futagawa
  • Patent number: 10811847
    Abstract: A QCL may include a substrate, and a sequence of semiconductor epitaxial layers adjacent the substrate and defining an active region, an injector region adjacent the active region, and a waveguide optically coupled to the active region. The active region may include stages, each stage having an upper laser level and a lower laser level defining respective first and second wavefunctions. The upper laser level may have an upper laser level average coordinate, and the lower laser level may have a lower laser level average coordinate. The upper laser level average coordinate and the lower laser level average coordinate may have spacing of less than 10 nm. Wave functions for all active region energy levels located below the lower laser level may have greater than 10% overlap with the injector region.
    Type: Grant
    Filed: September 20, 2018
    Date of Patent: October 20, 2020
    Assignee: UNIVERSITY OF CENTRAL FLORIDA RESEARCH FOUNDATION, INC.
    Inventors: Arkadiy Lyakh, Matthew Suttinger
  • Patent number: 10788632
    Abstract: A photonic integrated circuit for coupling a laser from an optical assembly to a grating coupler is disclosed. A method for coupling a laser to a photonic integrated circuit is disclosed. The optical assembly includes an optical system disposed on a v-groove bench. The optical system typically includes a laser source, a coupling lens or lens system, an optional isolator, a beam redirector that includes a prism or other light turning element and a cylindrical tube mounted on the v-groove bench. The method of tuning the angle of incidence from the optical assembly to the grating coupler is also disclosed.
    Type: Grant
    Filed: January 29, 2019
    Date of Patent: September 29, 2020
    Assignee: Google LLC
    Inventors: Daoyi Wang, Lieven Verslegers, Ryohei Urata
  • Patent number: 10777970
    Abstract: Provided is a metamaterial-based reflector including a first metamaterial layer including an array of first nanostructures, and a second metamaterial layer provided on the first metamaterial layer, the second metamaterial layer including an array of second nanostructures, wherein an arrangement of the second nanostructures is different from an arrangement the first nanostructures.
    Type: Grant
    Filed: June 14, 2019
    Date of Patent: September 15, 2020
    Assignees: SAMSUNG ELECTRONICS CO., LTD., UNIVERSITY OF MASSACHUSETTS
    Inventors: Seunghoon Han, Byunghoon Na, Babak Mirzapourbeinekalaye, Amir Arbabi
  • Patent number: 10763303
    Abstract: Provided is a micro light emission element including a compound semiconductor in which an N-side layer, a light emission layer, and a P-side layer are laminated sequentially from a side of a light emitting surface, in which an N-electrode coupled to the N-side layer and a P-electrode coupled to the P-side layer are disposed on another surface opposite to the light emitting surface, the P-electrode is disposed on the light emission layer, the N-electrode is disposed in an isolation region which is a boundary region of the micro light emission element and isolates the light emission layer from a light emission layer of another micro light emission element, a surface of the N-electrode on a side of the other surface and a surface of the P-electrode on the side of the other surface are flush with each other, and the N-electrode and the P-electrode are both formed of a single interconnection layer.
    Type: Grant
    Filed: May 16, 2019
    Date of Patent: September 1, 2020
    Assignee: SHARP KABUSHIKI KAISHA
    Inventor: Katsuji Iguchi
  • Patent number: 10749315
    Abstract: A multi-wavelength light emitting device is manufactured by forming first and second epitaxial materials overlying first and second surface regions. The first and second epitaxial materials are patterned to form a plurality of first and second epitaxial dice. At least one of the first plurality of epitaxial dice and at least one of the second plurality of epitaxial dice are transferred from first and second substrates, respectively, to a carrier wafer by selectively etching a release region, separating from the substrate each of the epitaxial dice that are being transferred, and selectively bonding to the carrier wafer each of the epitaxial dice that are being transferred. The transferred first and second epitaxial dice are processed on the carrier wafer to form a plurality of light emitting devices capable of emitting at least a first wavelength and a second wavelength.
    Type: Grant
    Filed: November 21, 2017
    Date of Patent: August 18, 2020
    Assignee: Soraa Laser Diode, Inc.
    Inventors: Melvin McLaurin, Alexander Sztein, Po Shan Hsu, Eric Goutain, James W. Raring, Paul Rudy, Vlad Novotny
  • Patent number: 10700487
    Abstract: Provided is a light source device, including: a base member; a semiconductor laser disposed on the base member; a lateral wall portion formed so as to surround the semiconductor laser; a light-transmissive lid covering a gap surrounded by the base member and the lateral wall portion; and a connection member that airtightly connects an upper surface of the lateral wall portion and a lower surface of the lid over an entire perimeter of the lateral wall portion. The lateral wall portion has a reflecting surface which is an inside surface connected to an upper surface, the reflecting surface being inclined so that light emitted from the semiconductor laser is reflected toward the lid. A dielectric film is continuously formed on the reflecting surface and the upper surface. A height of the connection member is greater than a height of the dielectric film formed on the upper surface.
    Type: Grant
    Filed: March 28, 2018
    Date of Patent: June 30, 2020
    Assignee: NICHIA CORPORATION
    Inventors: Tadaaki Miyata, Yoshihiro Kimura
  • Patent number: 10626040
    Abstract: A method of forming a glass article includes steps of: providing a glass substrate sheet, forming a first array of first damage regions, forming a second array of second damage regions which define a plurality of portions, wherein the second array of second damage regions define one or more interrupted zones. The interrupted zones may have a largest dimension of about 10 microns or greater. The method further includes steps of etching the glass substrate and singulating the plurality of portions from the glass substrate sheet.
    Type: Grant
    Filed: June 13, 2018
    Date of Patent: April 21, 2020
    Assignee: Corning Incorporated
    Inventor: Kristopher Allen Wieland
  • Patent number: 10622521
    Abstract: A light-emitting device includes a substrate, a plurality of light-emitting elements aligned along a longitudinal direction, and a covering member. The substrate includes a pair of first depressed portions and a second depressed portion each opening on a back surface and a bottom surface of a base and positioned on both end sides of the base in the longitudinal direction. The second depressed portion has a width larger than a width of the first depressed portions as measured along a height direction. First metal films extend from inside the first depressed portions to the back surface. A second metal film extends from inside the second depressed portion to the back surface. A solder mask covers at least a part of each of the first metal films and at least a part of the second metal film on the back surface of the base.
    Type: Grant
    Filed: April 25, 2018
    Date of Patent: April 14, 2020
    Assignee: NICHIA CORPORATION
    Inventors: Takuya Nakabayashi, Tomokazu Maruyama, Tetsuya Ishikawa
  • Patent number: 10608412
    Abstract: A light emitting apparatus includes: a submount including a mounting face and an end face, and the end face having an upper edge apart from a front edge of the mounting face; and a quantum cascade laser disposed on the front edge and the mounting face. The quantum cascade laser includes: a laser structure having first, and second faces; a first electrode on the first face; a second electrode on the second face; and a reflecting structure on a first end face of the laser structure. The reflecting structure includes an insulating film having a first end on the first face and a second end on the second face, and a metal film having a first end on the first face, and a second end on the second face. The insulating film is disposed between the laser structure and the first end and the second end of the metal film.
    Type: Grant
    Filed: June 14, 2018
    Date of Patent: March 31, 2020
    Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventor: Jun-ichi Hashimoto
  • Patent number: 10566767
    Abstract: A multi-emitter laser diode device includes a carrier chip singulated from a carrier wafer. The carrier chip has a length and a width, and the width defines a first pitch. The device also includes a plurality of epitaxial mesa dice regions transferred to the carrier chip from a substrate and attached to the carrier chip at a bond region. Each of the epitaxial mesa dice regions is arranged on the carrier chip in a substantially parallel configuration and positioned at a second pitch defining the distance between adjacent epitaxial mesa dice regions. Each of the plurality of epitaxial mesa dice regions includes epitaxial material, which includes an n-type cladding region, an active region having at least one active layer region, and a p-type cladding region. The device also includes one or more laser diode stripe regions, each of which has a pair of facets forming a cavity region.
    Type: Grant
    Filed: November 14, 2016
    Date of Patent: February 18, 2020
    Assignee: Soraa Laser Diode, Inc.
    Inventors: Dan Steigerwald, Melvin McLaurin, Eric Goutain, Alexander Sztein, Po Shan Hsu, Paul Rudy, James W. Raring
  • Patent number: 10566766
    Abstract: In an example, the present invention provides a gallium and nitrogen containing laser diode device. The device has a gallium and nitrogen containing substrate material comprising a surface region, which is configured on either a ({10-10}) crystal orientation or a {10-10} crystal orientation configured with an offcut at an angle toward or away from the [0001] direction. The device also has a GaN region formed overlying the surface region, an active region formed overlying the surface region, and a gettering region comprising a magnesium species overlying the surface region. The device has a p-type cladding region comprising an (InAl)GaN material doped with a plurality of magnesium species formed overlying the active region.
    Type: Grant
    Filed: December 13, 2018
    Date of Patent: February 18, 2020
    Assignee: Soraa Laser Diode, Inc.
    Inventors: Melvin McLaurin, James W. Raring, Christiane Elsass
  • Patent number: 10554021
    Abstract: A quantum cascade laser includes: a laser structure having a first region, a second region, and a third region, the first region having an end face; a high-specific resistance region on principal surfaces of the first and second regions; a metal layer on a principal surface of the third region; a dielectric film on the end face and the high-specific resistance region; and a reflective metal film on the dielectric film, the end face and the high-specific resistance region. The first to third regions are arranged in a direction of a first axis. The laser structure has a semiconductor mesa and a semiconductor base that mounts the semiconductor mesa. The high-specific resistance region has a wall or terrace providing a difference in level at a boundary between the first and second regions, the wall or terrace extending in a direction of a second axis intersecting that of the first axis.
    Type: Grant
    Filed: June 12, 2018
    Date of Patent: February 4, 2020
    Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventor: Hiroyuki Yoshinaga
  • Patent number: 10554022
    Abstract: A quantum cascade laser includes: a substrate including a substrate end face; a semiconductor laminate having a laminate end face and a core extending in an axial direction; a first electrode disposed on the semiconductor laminate; a second electrode disposed on a back surface of the substrate; an insulating film disposed on the laminate end face and the first electrode; and a first metal film disposed on the laminate end face, the insulating film and the first electrode, the insulating film being between the first metal film and the semiconductor laminate. The substrate end face and the laminate end face extend along a reference plane intersecting the axial direction. The substrate end face has a first area and a second area arranged in a direction from the back surface to a principal surface of the substrate, and the first metal film has an end on the second area.
    Type: Grant
    Filed: June 19, 2018
    Date of Patent: February 4, 2020
    Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventor: Jun-ichi Hashimoto
  • Patent number: 10490597
    Abstract: Embodiments of the invention include a first semiconductor layer grown over a growth substrate and a plurality of pixels grown on the first semiconductor layer, each pixel including an active layer disposed between an n-type region and a p-type region. Trenches isolate individual pixels and form at least one sidewall for each pixel. A first metal layer in direct contact with the p-type region is disposed on a top surface of each pixel. A second metal layer in direct contact with the n-type region is disposed on a bottom surface of a trench adjacent to each pixel. An insulating layer electrically isolating the first and second metal layers is disposed on the sidewall of each pixel and is substantially conformal to the sidewall.
    Type: Grant
    Filed: September 9, 2016
    Date of Patent: November 26, 2019
    Assignee: RayVio Corporation
    Inventors: Douglas A. Collins, Li Zhang, Faisal Sudradjat
  • Patent number: 10490979
    Abstract: A substrate including a photonic crystal has a compound semiconductor, dielectric layers, and a first semiconductor layer. The dielectric layers are provided on a surface of the compound semiconductor substrate and disposed at each grating point of a two-dimensional diffraction grating, each of the dielectric layers having an asymmetric shape in relation to at least one edge of the two-dimensional diffraction grating and having a refractive index lower than a refractive index of the compound semiconductor substrate. The first semiconductor layer includes a flat first face covering the dielectric layers and the surface of the compound semiconductor substrate, a layer constituting the first face containing a material capable of being lattice matched to a material constituting the compound semiconductor substrate.
    Type: Grant
    Filed: December 27, 2017
    Date of Patent: November 26, 2019
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Rei Hashimoto, Shinji Saito, Tsutomu Kakuno, Kei Kaneko, Yasunobu Kai, Naotada Okada
  • Patent number: 10476237
    Abstract: A quantum cascade laser includes: a substrate having a principal surface, a back surface, and a substrate end face, the substrate end face extending along a reference plane intersecting a second direction which intersects the first direction; a semiconductor laminate having a laminate end face extending along the reference plane; a first electrode disposed on the semiconductor laminate; a second electrode disposed on the substrate; a first insulating film disposed on the laminate end face and the first electrode; a metal film disposed on the first insulating film, the laminate end face, the substrate end face, and the second electrode; and a second insulating film disposed on the first electrode, the second insulating film having a part on the first electrode between the metal film and the semiconductor laminate. On the first electrode, the second insulating film has a thickness larger than that of the first insulating film.
    Type: Grant
    Filed: June 19, 2018
    Date of Patent: November 12, 2019
    Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventors: Jun-ichi Hashimoto, Hiroyuki Yoshinaga, Yukihiro Tsuji
  • Patent number: 10476235
    Abstract: A quantum cascade laser includes: a semiconductor substrate including principal and back surfaces; a semiconductor laminate having a laminate end face, the laminate end face and, the substrate end face extending along a reference plane intersecting a second direction that intersects the first direction; a first electrode disposed on the semiconductor laminate, the semiconductor laminate being disposed between the first electrode and the semiconductor substrate; a second electrode disposed on the back surface; a first insulating film disposed on the laminate end face, the substrate end face, and the first electrode; a metal film disposed on the first insulating film and the laminate end face, the substrate end face, and the first electrode; and a second insulating film disposed on the second electrode, and on the substrate end face, the metal film being disposed between the first insulating film and the second insulating film.
    Type: Grant
    Filed: June 19, 2018
    Date of Patent: November 12, 2019
    Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventor: Jun-ichi Hashimoto
  • Patent number: 10476236
    Abstract: A quantum cascade laser comprises: a laser structure including a first region, a second region, and a third region, the first region having an end face; a high-specific resistance region disposed on the first and second regions; a metal layer disposed on the third region; a dielectric film disposed on the end face and the high-specific resistance region; and a reflective metal film disposed on the dielectric film, the end face and the high-specific resistance region. The first to third regions are arranged in order in a direction of a first axis. The laser structure has a terrace on a boundary between the second and third regions, and the laser structure includes a semiconductor mesa and a conductive base. The semiconductor mesa has a core layer, and the conductive base mounts the semiconductor mesa. The high-specific resistance region has a specific resistance larger than that of the conductive base.
    Type: Grant
    Filed: June 12, 2018
    Date of Patent: November 12, 2019
    Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventor: Hiroyuki Yoshinaga
  • Patent number: 10404038
    Abstract: A quantum cascade laser includes: a semiconductor device portion having a substrate, a semiconductor laminate, and a semiconductor insulating portion, the semiconductor laminate having a principal surface, the substrate having a back surface and a substrate end face, the semiconductor laminate having a laminate end face, the semiconductor insulating portion and the substrate being arranged along a reference plane intersecting the second direction, the semiconductor device portion having a front end face and a rear end face, the front end face and the rear end face being arranged in the second direction, the rear end face including the substrate end face, and the substrate end face extending along the reference plane; a first electrode disposed on the semiconductor laminate; and a metal film disposed on the rear end face, the semiconductor insulating portion and the second electrode, the metal film being apart from the first electrode.
    Type: Grant
    Filed: June 19, 2018
    Date of Patent: September 3, 2019
    Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventor: Jun-ichi Hashimoto
  • Patent number: 10340663
    Abstract: A quantum cascade laser includes a semiconductor substrate and an active layer having a cascade structure, in which unit layered bodies, each composed of a quantum well light emitting layer and an injection layer, are stacked, wherein the unit layered body has a subband level structure having an upper laser level, a lower laser level, and a relaxation miniband composed of at least two energy levels with an energy spacing smaller than the energy difference (EUL) between the upper laser level and the lower laser level, the energy width of the relaxation miniband is smaller than the energy (ELO?EUL) obtained by subtracting the energy difference (EUL) from the energy (ELO) of longitudinal optical phonons, and electrons subjected to the intersubband transition are relaxed in the relaxation miniband and are injected into a quantum well light emitting layer in a subsequent unit layered body.
    Type: Grant
    Filed: May 19, 2017
    Date of Patent: July 2, 2019
    Assignees: SHARP KABUSHIKI KAISHA, THE UNIVERSITY OF TOKYO
    Inventors: Teruhisa Kotani, Yasuhiko Arakawa
  • Patent number: 10312667
    Abstract: A quantum cascade laser includes a laser structure including first and second end faces, the laser structure including a semiconductor laminate region and a first embedding semiconductor region. The laser structure includes first and second regions arranged in a direction of a first axis extending from the first to second end faces. Each of the first and second regions includes the semiconductor laminate region. The semiconductor laminate region of the first region has a first recess. The semiconductor laminate region of the second region has a semiconductor mesa. The first recess and the semiconductor mesa extend in the direction of the first axis, and are aligned with each other. The semiconductor mesa has an end face extending in a direction of a second axis intersecting the first axis. The first embedding semiconductor region is disposed in the first recess so as to embed the end face of the semiconductor mesa.
    Type: Grant
    Filed: December 7, 2017
    Date of Patent: June 4, 2019
    Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventor: Jun-ichi Hashimoto
  • Patent number: 10153401
    Abstract: LED structures passivated with a III-N passivation material including Al. The III-N passivation material may reduce nonradiative recombination, reducing leakage current of an LED structure, and/or improve luminous efficacy. An LED structure may include III-N materials in a multiple quantum well (MQW) structure, and the III-N passivation material including Al may have a wider bandgap than any of the materials in the MQW structure. The III-N passivation material may be AlN, which can be deposited as a binary compound at low temperatures to maintain quality of the MQW structure. The III-N passivation material can be selectively deposited on a sidewall of at least the MQW structure. The III-N passivation material can be unselectively deposited over an LED structure and then etched to form a III-N spacer along a sidewall of at least the MQW structure. Energy efficient RGB micro(?) LED emissive displays may include passivated LED structures.
    Type: Grant
    Filed: December 16, 2016
    Date of Patent: December 11, 2018
    Assignee: Intel Corporation
    Inventor: Khaled Ahmed
  • Patent number: 10153168
    Abstract: A method of manufacturing a semiconductor device includes: forming a light absorbing layer on a front surface of a semiconductor substrate or in the semiconductor substrate; forming a high concentration layer, in which an impurity concentration is increased, by implanting impurities into the semiconductor substrate; and heating the high concentration layer so as to activate the impurities in the high concentration layer. The formation of the light absorbing layer and the formation of the high concentration layer are performed such that the light absorbing layer and the high concentration layer at least partially overlap each other. The high concentration layer is heated by irradiating the high concentration layer with light from a front surface side of the semiconductor substrate in the heating of the high concentration layer.
    Type: Grant
    Filed: November 9, 2017
    Date of Patent: December 11, 2018
    Assignee: TOYOTA JIDOSHA KABUSHIKI KAISHA
    Inventor: Tsuyoshi Nishiwaki
  • Patent number: 10141714
    Abstract: A plurality of dies includes a gallium and nitrogen containing substrate having a surface region and an epitaxial material formed overlying the surface region. The epitaxial material includes an n-type cladding region, an active region having at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active region. The epitaxial material is patterned to form the plurality of dies on the surface region, the dies corresponding to a laser device. Each of the plurality of dies includes a release region composed of a material with a smaller bandgap than an adjacent epitaxial material. A lateral width of the release region is narrower than a lateral width of immediately adjacent layers above and below the release region to form undercut regions bounding each side of the release region. Each die also includes a passivation region extending along sidewalls of the active region.
    Type: Grant
    Filed: August 11, 2017
    Date of Patent: November 27, 2018
    Assignee: Soraa Laser Diode, Inc.
    Inventors: Alexander Sztein, Melvin McLaurin, Po Shan Hsu, James W. Raring
  • Patent number: 10109768
    Abstract: A light-emitting diode chip including a p-type semiconductor layer, a light-emitting layer and an n-type semiconductor layer is provided. The light-emitting layer is disposed between the p-type semiconductor layer and the n-type semiconductor layer. A ratio of a sum of thicknesses of all semiconductor layers of the light-emitting diode chip over a maximum width of the light-emitting diode chip ranges from 0.02 to 1.5. A ratio of a sum of thicknesses of all semiconductor layers located in a side of the light-emitting layer toward the p-type semiconductor layer over the sum of thicknesses of all semiconductor layers of the light-emitting diode chip ranges from 0.05 to 0.2.
    Type: Grant
    Filed: July 7, 2017
    Date of Patent: October 23, 2018
    Assignee: PlayNitride Inc.
    Inventors: Jyun-De Wu, Yu-Yun Lo
  • Patent number: 10079363
    Abstract: A mirror display device includes a first base substrate, a light emitting layer, a mirror layer, and a second base substrate. The light emitting layer is provided on the first base substrate. A mirror layer is provided on the light emitting layer and reflects a shape of an object. The second base substrate is provided on the mirror layer. The light emitting layer may have a circular shape in a plan view.
    Type: Grant
    Filed: February 19, 2016
    Date of Patent: September 18, 2018
    Assignee: Samsung Display Co., Ltd.
    Inventors: Daewoo Lee, Byoungki Kim, Hojin Yoon, Yun-mo Chung
  • Patent number: 10069281
    Abstract: A laser diode includes a ridge portion, channel portions located adjacent to the ridge portion such that the ridge portion is sandwiched, the channel portions being shorter in height than the ridge portion, terrace portions adjacent to opposite sides of the respective channel portions from the ridge portion and longer in height than the channel portions, supporting portions provided over the respective channel portions, separated from side surfaces of the ridge portion or side surfaces of terrace portions or both, and made of resin, a ceiling portion including first portions provided over the supporting portions and second portions continuous with the first portions and located over the respective channel portions with hollow portions interposed therebetween, the ceiling portion being made of resin, and a metal layer provided over the ceiling portion and connected to an upper surface of the ridge portion.
    Type: Grant
    Filed: December 18, 2017
    Date of Patent: September 4, 2018
    Assignee: Mitsubishi Electric Corporation
    Inventors: Kazuhiro Maeda, Masafumi Minami, Naoki Nakamura, Daisuke Morita
  • Patent number: 9941664
    Abstract: A hybrid III-V on silicon laser device includes a layer structure, with a stack of III-V semiconductor gain materials, a silicon waveguide core and a cladding structure. The semiconductor gain materials stack is along a stacking direction, which is perpendicular to a main plane of the stack. The silicon waveguide core extends along a longitudinal direction, parallel to the main plane. The cladding structure extends between said waveguide core and the stack. The device further comprises an optical coupling structure formed in the layer structure. This coupling structure is designed: 1) to allow a hybrid-mode optical coupling of radiation between the stack of III-V semiconductor gain materials and the tapered waveguide core; and 2) to favor a coupling of a fundamental transverse optical mode of said radiation over a coupling of one or more higher-order transverse optical modes of said radiation from the stack into the waveguide core.
    Type: Grant
    Filed: March 22, 2017
    Date of Patent: April 10, 2018
    Assignee: International Business Machines Corporation
    Inventors: Herwig Hahn, Folkert Horst, Marc Seifried
  • Patent number: 9865993
    Abstract: A beam control structure for semiconductor lasers that allows modification of the shape of a beam allowing, for example, higher coupling into an optical fiber. The structure may comprise one or more of a tilted patio, a staircase, a reflective roof, and a reflective sidewall.
    Type: Grant
    Filed: May 20, 2016
    Date of Patent: January 9, 2018
    Assignee: MACOM TECHNOLOGY SOLUTIONS HOLDINGS, INC.
    Inventors: Cristian Stagarescu, Alex A. Behfar, Norman Sze-keung Kwong
  • Patent number: 9859687
    Abstract: A beam control structure for semiconductor lasers that allows modification of the shape of a beam allowing, for example, higher coupling into an optical fiber. The structure may comprise one or more of a tilted patio, a staircase, a reflective roof, and a reflective sidewall.
    Type: Grant
    Filed: May 20, 2016
    Date of Patent: January 2, 2018
    Assignee: MACOM TECHNOLOGY SOLUTIONS HOLDINGS, INC.
    Inventors: Cristian Stagarescu, Alex A. Behfar, Norman Sze-keung Kwong
  • Patent number: 9812596
    Abstract: Provided are photoelectric devices and electronic apparatuses including the photoelectric devices. A photoelectric device may include a photoactive layer, the photoactive layer may include a nanostructure layer configured to generate a charge in response to light and a semiconductor layer adjacent to the nanostructure layer. The nanostructure layer may include one or more quantum dots. The semiconductor layer may include an oxide semiconductor. The photoelectric device may include a first electrode and a second electrode that contact different regions of the photoactive layer. A number of the photoelectric conversion elements may be arranged in a horizontal direction or may be stacked in a vertical direction. The photoelectric conversion elements may absorb and thereby detect light in different wavelength bands without the use of color filters.
    Type: Grant
    Filed: June 30, 2016
    Date of Patent: November 7, 2017
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Kyungsang Cho, Chanwook Baik, Heejeong Jeong
  • Patent number: 9733545
    Abstract: A nonlinear metasurface structure including a multi-quantum-well layer designed for a nonlinear response for a desired nonlinear optical process and an array of nanoantennas coupled to the intersubband transitions of the multi-quantum-well layer. Each nanoantenna in the array is designed to have electromagnetic resonances at or close to all input and output frequencies of a given nonlinear optical process. Nanoantennas allow efficient coupling of any incident and outgoing light polarizations to intersubband transitions. Nanoantennas may further provide significant field enhancement in the multi-quantum-well layer. As a result, the nonlinear metasurface structure can be designed to produce a highly nonlinear response for any polarization and angle of incidence of incoming and outgoing waves in a nonlinear optical process. Due to their very larger nonlinear response, efficient frequency conversion can be produced in these metasurfaces without the stringent phase-matching constraints of bulk nonlinear crystals.
    Type: Grant
    Filed: July 30, 2015
    Date of Patent: August 15, 2017
    Assignee: Board of Regents, The University of Texas System
    Inventors: Mikhail Belkin, Andrea Alu, Jongwon Lee, Mykhailo Tymchenko
  • Patent number: 9685577
    Abstract: The present application relates generally to light emitting diodes and photodetectors as well as their methods of manufacture and use. In one exemplary embodiment, an integrated device may include a substrate, a light emitting diode formed on the substrate, and a photodetector formed on the substrate. In another embodiment, a device may include a light emitting diode formed on a substrate, and the light emitting diode may act as both a solid state light and as an optical transmitter.
    Type: Grant
    Filed: October 15, 2014
    Date of Patent: June 20, 2017
    Assignee: The Penn State Research Foundation
    Inventors: Zhenyu Jiang, Jian Xu, Jie Liu
  • Patent number: 9685752
    Abstract: The invention relates to a laser assembly with a converter designed as a fiber laser for generating a converted output laser beam, and having a pumping source that supplies a pump beam to the converter and includes a plurality of laser diodes that generate the pump beam and are formed by emitters mounted on laser bars, the pumping source having beam forming optics for forming the laser beams supplied by the emitters into the pump beam.
    Type: Grant
    Filed: March 21, 2014
    Date of Patent: June 20, 2017
    Inventors: Volker Krause, Georg Rehmann, Charley Bachert