Abstract: The invention provides a light source module including a substrate, a plurality of light emitting elements, a buffer element, and a cover plate. The substrate has a plurality of accommodation grooves. The light emitting elements are respectively disposed in the accommodation grooves. Each light emitting element has a light emitting portion and a bottom portion connected to each other. The light emitting portion is located on the bottom portion, and the bottom portion has an edge. The buffer element is pressed against the edges of the bottom portions of the light emitting elements. The cover plate is combined with the substrate and is pressed against the buffer element. The cover plate has a plurality of first openings. These first openings respectively expose the light emitting elements. The invention also provides a projection apparatus has above-mentioned light source module.

Abstract: A tunable vertical-cavity surface-emitting laser (VCSEL) is provided. The VCSEL includes a VCSEL emission structure, piezoelectric material, and a piezoelectric electrode. The VCSEL emission structure includes a first reflector; a second reflector; and an active cavity material structure disposed between the first and second reflectors. The active cavity material structure includes an active region. The piezoelectric material is mechanically coupled to the VCSEL emission structure such that when the piezoelectric material experiences a mechanical stress, the mechanical stress is transferred to the active cavity material structure of the VCSEL emission structure. The piezoelectric electrode is designed to cause an electric field within the piezoelectric material.

Abstract: A light emitting device includes a wiring substrate, and light emitting elements. The light emitting elements are aligned in a first array, and each includes a sapphire substrate having a lower surface, a pair of first lateral surfaces slanted with respect to the lower surface, and a pair of second lateral surfaces perpendicular to the lower surface, with the pair of first lateral surfaces has an acute angle lateral surface and an obtuse angle lateral surface, and a semiconductor layered structure disposed on the sapphire substrate. In a plan view, a direction along which the second lateral surfaces of one of the light emitting elements in the first array extend forms an angle of 45° with respect to a direction along which the second lateral surfaces of an adjacent one of the light emitting elements in the first array extend.

Abstract: A light-emitting device includes a light-emitting element having a first-type semiconductor layer, a second-type semiconductor layer, an active stack between the first-type semiconductor layer and the second-type semiconductor layer, a bottom surface, and a top surface. A first electrode is disposed on the bottom surface and electrically connected to the first-type semiconductor layer. A second electrode is disposed on the bottom surface and electrically connected to the second-type semiconductor layer. A supporting structure is disposed on the top surface. The supporting structure has a thickness and a maximum width. A ratio of the maximum width to the thickness is of 2˜150.

Abstract: A semiconductor optical device may include a semiconductor substrate; a mesa stripe structure that extends in a stripe shape in a first direction on the semiconductor substrate and includes a contact layer on a top layer; an adjacent layer on the semiconductor substrate and adjacent to the mesa stripe structure in a second direction orthogonal to the first direction; a passivation film that covers at least a part of the adjacent layer; a resin layer on the passivation film; an electrode that is electrically connected to the contact layer and extends continuously from the contact layer to the resin layer; and an inorganic insulating film that extends continuously from the resin layer to the passivation film under the electrode, is spaced apart from the mesa stripe structure, and is completely interposed between the electrode and the resin layer.

Abstract: A semiconductor light emitting device includes a light emitting structure having a rod shape with first and second surfaces opposing each other and a side surface connected between the first and second surfaces, and including a first conductivity-type semiconductor providing the first surface, an active layer and a second conductivity-type semiconductor, a first electrode layer on a first region of the first surface of the light emitting structure and connected to the first conductivity-type semiconductor, the first region having a level that is vertically offset from a level of a second region adjacent thereto, and a second electrode layer connected to the second conductivity-type semiconductor.

Abstract: A QCL may include a substrate, and a sequence of semiconductor epitaxial layers adjacent the substrate and defining an active region, an injector region adjacent the active region, and a waveguide optically coupled to the active region. The active region may include stages, each stage having an upper laser level and a lower laser level defining respective first and second wave functions. The upper laser level may have an upper laser level average coordinate, and the lower laser level may have a lower laser level average coordinate. The upper laser level average coordinate and the lower laser level average coordinate may have spacing of less than 10 nm. Wave functions for all active region energy levels located below the lower laser level may have greater than 10% overlap with the injector region.

Abstract: A light emitting element includes a laminated structure formed by laminating a first light reflecting layer 41, a light emitting structure 20, and a second light reflecting layer 42. The light emitting structure 20 is formed by laminating, from the first light reflecting layer side, a first compound semiconductor layer 21, an active layer 23, and a second compound semiconductor layer 22. In the laminated structure 20, at least two light absorbing material layers 51 are formed in parallel to a virtual plane occupied by the active layer 23.

Abstract: A laser device includes: a plurality of laser diodes that emit laser beams having different wavelengths; a partial reflection mirror that resonates the plurality of laser beams emitted by the plurality of laser diodes; and a wavelength dispersion element that causes the plurality of laser beams incident from the plurality of laser diodes in different orientations of optical axes of the laser beams to travel to the mirror with the optical axes aligned. Each of the plurality of laser diodes is integrally formed with an adjustment component that is rotatable around an emission end of the laser diode.

Abstract: A light source device includes: a laser diode configured to emit laser light; a substrate directly or indirectly supporting the laser diode; a glass cap secured to the substrate and covering the laser diode, the glass cap comprising a front glass wall configured to transmit the laser light that is emitted from the laser diode, the front glass wall having an incident surface on which the laser light is incident and an emission surface from which the laser light exits; and a photodetector directly or indirectly supported by the substrate and located outside of the glass cap. The photodetector is configured to detect light reflected at the front glass wall and is transmitted through the glass cap.

Abstract: A semiconductor laser device may include a first cladding on a substrate, an optical waveguide on the first cladding, a laser light source chip on the optical waveguide to generate a laser beam, a first adhesive layer between the optical waveguide and the laser light source chip, and a second adhesive layer covering a sidewall of the laser light source chip.

Abstract: The present disclosure provides a method and structure for producing large area gallium and nitrogen engineered substrate members configured for the epitaxial growth of layer structures suitable for the fabrication of high performance semiconductor devices. In a specific embodiment the engineered substrates are used to manufacture gallium and nitrogen containing devices based on an epitaxial transfer process wherein as-grown epitaxial layers are transferred from the engineered substrate to a carrier wafer for processing. In a preferred embodiment, the gallium and nitrogen containing devices are laser diode devices operating in the 390 nm to 425 nm range, the 425 nm to 485 nm range, the 485 nm to 550 nm range, or greater than 550 nm.

Abstract: A photonic die includes an optical component that can emit output light. The optical component includes a substrate having a length and width that are substantially greater than a thickness thereof, the thickness defining a vertical direction. The optical component includes a vertical edge, and a reflective or antireflective coating on the vertical edge, wherein the reflective or antireflective coating includes a silicon-based material.

Abstract: Ohmic contacts, including materials and processes for forming n-type ohmic contacts on n-type semiconductor substrates at low temperatures, are disclosed. Materials include reactant layers, n-type dopant layers, capping layers, and in some instances, adhesion layers. The capping layers can include metal layers and diffusion barrier layers. Ohmic contacts can be formed on n-type semiconductor substrates at temperatures between 150 and 250° C., and can resist degradation during operation.

Abstract: A process for producing a structure (100) comprising a membrane (3) of a first material, in particular indium-tin oxide, in contact with receiving ends (13) of a plurality of nanowires (1), the process comprising forming a nanowire device (10) comprising the receiving ends (13), the receiving ends being formed so as to form planar surfaces, and (ii) placing, especially by transfer, a membrane device (3; 34) directly on the nanowires the planar surfaces of the ends for receiving the membrane.

Abstract: Structures that include a Bragg grating and methods of fabricating a structure that includes a Bragg grating. The structure includes a waveguide core and a Bragg grating having a plurality of segments positioned with a spaced arrangement adjacent to the waveguide core. Each segment includes one or more exterior surfaces. The structure further includes a silicide layer located on the one or more exterior surfaces of each segment.

Abstract: A multi-wavelength light emitting device is manufactured by forming first and second epitaxial materials overlying first and second surface regions. The first and second epitaxial materials are patterned to form a plurality of first and second epitaxial dice. At least one of the first plurality of epitaxial dice and at least one of the second plurality of epitaxial dice are transferred from first and second substrates, respectively, to a carrier wafer by selectively etching a release region, separating from the substrate each of the epitaxial dice that are being transferred, and selectively bonding to the carrier wafer each of the epitaxial dice that are being transferred. The transferred first and second epitaxial dice are processed on the carrier wafer to form a plurality of light emitting devices capable of emitting at least a first wavelength and a second wavelength.

Abstract: A semiconductor device according to the present technology includes a first semiconductor layer; a second semiconductor layer; an active layer; and a transparent conductive layer. The first semiconductor layer has a first conductivity type, a stripe-shaped ridge being formed on a surface of the first semiconductor layer. A second width is 0.99-1.0 times a first width, a third width is 0.96-1.0 times the second width, and the transparent conductive layer has a uniform thickness within a range of 90% to 110% in a range of the third width, the first width being a width in a direction perpendicular to an extending direction of the ridge, the second width being a width in the direction on a surface of the transparent conductive layer on a side of the ridge, the third width being a width in the direction on a surface opposite to the ridge of the transparent conductive layer.

Abstract: The disclosure recites a solid-state total reflection display and a manufacture method thereof, and a display device. The solid-state total reflection display includes: a drive circuit layer, and a heating layer and a pixel function layer stacked successively on the drive circuit layer; a plurality of pixel structures in the pixel function layer are arranged in an array, and the pixel structures each includes a reflection layer, a resonant cavity layer, a phase change material layer and a transparent covering layer stacked successively; a plurality of light adjusting structures are arranged between two adjacent pixel structures among the plurality of pixel structures in a row or column direction of the array; a side of each light adjusting structure towards an ambient light-entering side of the solid-state total reflection display is in a concave shape.

Abstract: Embodiments relate to mass-transfer methods useful for fabricating products containing Light Emitting Diode (LED) structures. LED arrays are transferred from a source substrate to a target substrate by beam-assisted release (BAR) of a plurality of LED devices in a high-speed flexible manner. The BAR mass-transfer approach is also able to utilize a Known Good Die (KGD) data file of the source substrate to transfer only functionally good die and avoid rework and yield losses.

Abstract: A quantum cascade semiconductor laser includes a laser structure having a first area including an end face, a second area, and a third area; a metal layer provided on a major surface in the third area; a separation area provided on the major surface; and a reflector provided on the laser structure. The reflector includes a dielectric film and a metal reflecting film provided on the end face and the separation area. The separation area has a first portion, a second portion, and a third portion. The metal layer has an edge separated from the end face in the third area. The contact layer has an edge separated from the end face in the third area. The first portion projects more than the second portion over the semiconductor mesa. The third portion projects more than the second portion over the semiconductor mesa.

Abstract: Disclosed herein is a light-emitting device.

Abstract: A light source device and an electronic apparatus are provided. The light source device includes a substrate, an electrode layer and a surrounding frame disposed on the substrate, a light emitter and a light detector mounted on the electrode layer and located inside of the surrounding frame, and a light permeable member disposed on the surrounding frame and covering the light emitter and the light detector. When the light emitter receives a predetermined current so as to emit an invisible light toward the light permeable member, the light detector receives a reflected part of the invisible light to generate an initial photocurrent. When the light emitter receives a manipulation current so that a detection photocurrent generated from the light detector is less than a first proportion of the initial photocurrent or greater than a second proportion of the initial photocurrent, the light emitter stops receiving the manipulation current.

Abstract: A light emitting element includes a laminated structure formed by laminating a first light reflecting layer 41, a light emitting structure 20, and a second light reflecting layer 42. The light emitting structure 20 is formed by laminating, from the first light reflecting layer side, a first compound semiconductor layer 21, an active layer 23, and a second compound semiconductor layer 22. In the laminated structure 20, at least two light absorbing material layers 51 are formed in parallel to a virtual plane occupied by the active layer 23.

Abstract: A semiconductor laser including an active zone and a waveguide, wherein the active zone includes an active layer configured to generate electromagnetic radiation during operation of the semiconductor laser, the waveguide is configured to guide the electromagnetic radiation generated during operation of the semiconductor laser within the semiconductor laser, the waveguide includes a subregion formed from a compound semiconductor material, wherein a proportion of a material of the compound semiconductor material gradually increases in the entire subregion along the vertical direction toward the active zone so that a refractive index of the subregion gradually decreases toward the active zone, and the proportion is an aluminum proportion or a phosphorus proportion.

Abstract: A QCL may include a substrate, and a sequence of semiconductor epitaxial layers adjacent the substrate and defining an active region, an injector region adjacent the active region, and a waveguide optically coupled to the active region. The active region may include stages, each stage having an upper laser level and a lower laser level defining respective first and second wavefunctions. The upper laser level may have an upper laser level average coordinate, and the lower laser level may have a lower laser level average coordinate. The upper laser level average coordinate and the lower laser level average coordinate may have spacing of less than 10 nm. Wave functions for all active region energy levels located below the lower laser level may have greater than 10% overlap with the injector region.

Abstract: A photonic integrated circuit for coupling a laser from an optical assembly to a grating coupler is disclosed. A method for coupling a laser to a photonic integrated circuit is disclosed. The optical assembly includes an optical system disposed on a v-groove bench. The optical system typically includes a laser source, a coupling lens or lens system, an optional isolator, a beam redirector that includes a prism or other light turning element and a cylindrical tube mounted on the v-groove bench. The method of tuning the angle of incidence from the optical assembly to the grating coupler is also disclosed.

Abstract: Provided is a metamaterial-based reflector including a first metamaterial layer including an array of first nanostructures, and a second metamaterial layer provided on the first metamaterial layer, the second metamaterial layer including an array of second nanostructures, wherein an arrangement of the second nanostructures is different from an arrangement the first nanostructures.

Abstract: Provided is a micro light emission element including a compound semiconductor in which an N-side layer, a light emission layer, and a P-side layer are laminated sequentially from a side of a light emitting surface, in which an N-electrode coupled to the N-side layer and a P-electrode coupled to the P-side layer are disposed on another surface opposite to the light emitting surface, the P-electrode is disposed on the light emission layer, the N-electrode is disposed in an isolation region which is a boundary region of the micro light emission element and isolates the light emission layer from a light emission layer of another micro light emission element, a surface of the N-electrode on a side of the other surface and a surface of the P-electrode on the side of the other surface are flush with each other, and the N-electrode and the P-electrode are both formed of a single interconnection layer.

Abstract: A multi-wavelength light emitting device is manufactured by forming first and second epitaxial materials overlying first and second surface regions. The first and second epitaxial materials are patterned to form a plurality of first and second epitaxial dice. At least one of the first plurality of epitaxial dice and at least one of the second plurality of epitaxial dice are transferred from first and second substrates, respectively, to a carrier wafer by selectively etching a release region, separating from the substrate each of the epitaxial dice that are being transferred, and selectively bonding to the carrier wafer each of the epitaxial dice that are being transferred. The transferred first and second epitaxial dice are processed on the carrier wafer to form a plurality of light emitting devices capable of emitting at least a first wavelength and a second wavelength.

Abstract: Provided is a light source device, including: a base member; a semiconductor laser disposed on the base member; a lateral wall portion formed so as to surround the semiconductor laser; a light-transmissive lid covering a gap surrounded by the base member and the lateral wall portion; and a connection member that airtightly connects an upper surface of the lateral wall portion and a lower surface of the lid over an entire perimeter of the lateral wall portion. The lateral wall portion has a reflecting surface which is an inside surface connected to an upper surface, the reflecting surface being inclined so that light emitted from the semiconductor laser is reflected toward the lid. A dielectric film is continuously formed on the reflecting surface and the upper surface. A height of the connection member is greater than a height of the dielectric film formed on the upper surface.

Abstract: A method of forming a glass article includes steps of: providing a glass substrate sheet, forming a first array of first damage regions, forming a second array of second damage regions which define a plurality of portions, wherein the second array of second damage regions define one or more interrupted zones. The interrupted zones may have a largest dimension of about 10 microns or greater. The method further includes steps of etching the glass substrate and singulating the plurality of portions from the glass substrate sheet.

Abstract: A light-emitting device includes a substrate, a plurality of light-emitting elements aligned along a longitudinal direction, and a covering member. The substrate includes a pair of first depressed portions and a second depressed portion each opening on a back surface and a bottom surface of a base and positioned on both end sides of the base in the longitudinal direction. The second depressed portion has a width larger than a width of the first depressed portions as measured along a height direction. First metal films extend from inside the first depressed portions to the back surface. A second metal film extends from inside the second depressed portion to the back surface. A solder mask covers at least a part of each of the first metal films and at least a part of the second metal film on the back surface of the base.

Abstract: A light emitting apparatus includes: a submount including a mounting face and an end face, and the end face having an upper edge apart from a front edge of the mounting face; and a quantum cascade laser disposed on the front edge and the mounting face. The quantum cascade laser includes: a laser structure having first, and second faces; a first electrode on the first face; a second electrode on the second face; and a reflecting structure on a first end face of the laser structure. The reflecting structure includes an insulating film having a first end on the first face and a second end on the second face, and a metal film having a first end on the first face, and a second end on the second face. The insulating film is disposed between the laser structure and the first end and the second end of the metal film.

Abstract: In an example, the present invention provides a gallium and nitrogen containing laser diode device. The device has a gallium and nitrogen containing substrate material comprising a surface region, which is configured on either a ({10-10}) crystal orientation or a {10-10} crystal orientation configured with an offcut at an angle toward or away from the [0001] direction. The device also has a GaN region formed overlying the surface region, an active region formed overlying the surface region, and a gettering region comprising a magnesium species overlying the surface region. The device has a p-type cladding region comprising an (InAl)GaN material doped with a plurality of magnesium species formed overlying the active region.

Abstract: A multi-emitter laser diode device includes a carrier chip singulated from a carrier wafer. The carrier chip has a length and a width, and the width defines a first pitch. The device also includes a plurality of epitaxial mesa dice regions transferred to the carrier chip from a substrate and attached to the carrier chip at a bond region. Each of the epitaxial mesa dice regions is arranged on the carrier chip in a substantially parallel configuration and positioned at a second pitch defining the distance between adjacent epitaxial mesa dice regions. Each of the plurality of epitaxial mesa dice regions includes epitaxial material, which includes an n-type cladding region, an active region having at least one active layer region, and a p-type cladding region. The device also includes one or more laser diode stripe regions, each of which has a pair of facets forming a cavity region.

Abstract: A quantum cascade laser includes: a substrate including a substrate end face; a semiconductor laminate having a laminate end face and a core extending in an axial direction; a first electrode disposed on the semiconductor laminate; a second electrode disposed on a back surface of the substrate; an insulating film disposed on the laminate end face and the first electrode; and a first metal film disposed on the laminate end face, the insulating film and the first electrode, the insulating film being between the first metal film and the semiconductor laminate. The substrate end face and the laminate end face extend along a reference plane intersecting the axial direction. The substrate end face has a first area and a second area arranged in a direction from the back surface to a principal surface of the substrate, and the first metal film has an end on the second area.

Abstract: A quantum cascade laser includes: a laser structure having a first region, a second region, and a third region, the first region having an end face; a high-specific resistance region on principal surfaces of the first and second regions; a metal layer on a principal surface of the third region; a dielectric film on the end face and the high-specific resistance region; and a reflective metal film on the dielectric film, the end face and the high-specific resistance region. The first to third regions are arranged in a direction of a first axis. The laser structure has a semiconductor mesa and a semiconductor base that mounts the semiconductor mesa. The high-specific resistance region has a wall or terrace providing a difference in level at a boundary between the first and second regions, the wall or terrace extending in a direction of a second axis intersecting that of the first axis.

Abstract: Embodiments of the invention include a first semiconductor layer grown over a growth substrate and a plurality of pixels grown on the first semiconductor layer, each pixel including an active layer disposed between an n-type region and a p-type region. Trenches isolate individual pixels and form at least one sidewall for each pixel. A first metal layer in direct contact with the p-type region is disposed on a top surface of each pixel. A second metal layer in direct contact with the n-type region is disposed on a bottom surface of a trench adjacent to each pixel. An insulating layer electrically isolating the first and second metal layers is disposed on the sidewall of each pixel and is substantially conformal to the sidewall.

Abstract: A substrate including a photonic crystal has a compound semiconductor, dielectric layers, and a first semiconductor layer. The dielectric layers are provided on a surface of the compound semiconductor substrate and disposed at each grating point of a two-dimensional diffraction grating, each of the dielectric layers having an asymmetric shape in relation to at least one edge of the two-dimensional diffraction grating and having a refractive index lower than a refractive index of the compound semiconductor substrate. The first semiconductor layer includes a flat first face covering the dielectric layers and the surface of the compound semiconductor substrate, a layer constituting the first face containing a material capable of being lattice matched to a material constituting the compound semiconductor substrate.

Abstract: A quantum cascade laser includes: a semiconductor substrate including principal and back surfaces; a semiconductor laminate having a laminate end face, the laminate end face and, the substrate end face extending along a reference plane intersecting a second direction that intersects the first direction; a first electrode disposed on the semiconductor laminate, the semiconductor laminate being disposed between the first electrode and the semiconductor substrate; a second electrode disposed on the back surface; a first insulating film disposed on the laminate end face, the substrate end face, and the first electrode; a metal film disposed on the first insulating film and the laminate end face, the substrate end face, and the first electrode; and a second insulating film disposed on the second electrode, and on the substrate end face, the metal film being disposed between the first insulating film and the second insulating film.

Abstract: A quantum cascade laser includes: a substrate having a principal surface, a back surface, and a substrate end face, the substrate end face extending along a reference plane intersecting a second direction which intersects the first direction; a semiconductor laminate having a laminate end face extending along the reference plane; a first electrode disposed on the semiconductor laminate; a second electrode disposed on the substrate; a first insulating film disposed on the laminate end face and the first electrode; a metal film disposed on the first insulating film, the laminate end face, the substrate end face, and the second electrode; and a second insulating film disposed on the first electrode, the second insulating film having a part on the first electrode between the metal film and the semiconductor laminate. On the first electrode, the second insulating film has a thickness larger than that of the first insulating film.

Abstract: A quantum cascade laser comprises: a laser structure including a first region, a second region, and a third region, the first region having an end face; a high-specific resistance region disposed on the first and second regions; a metal layer disposed on the third region; a dielectric film disposed on the end face and the high-specific resistance region; and a reflective metal film disposed on the dielectric film, the end face and the high-specific resistance region. The first to third regions are arranged in order in a direction of a first axis. The laser structure has a terrace on a boundary between the second and third regions, and the laser structure includes a semiconductor mesa and a conductive base. The semiconductor mesa has a core layer, and the conductive base mounts the semiconductor mesa. The high-specific resistance region has a specific resistance larger than that of the conductive base.

Abstract: A quantum cascade laser includes: a semiconductor device portion having a substrate, a semiconductor laminate, and a semiconductor insulating portion, the semiconductor laminate having a principal surface, the substrate having a back surface and a substrate end face, the semiconductor laminate having a laminate end face, the semiconductor insulating portion and the substrate being arranged along a reference plane intersecting the second direction, the semiconductor device portion having a front end face and a rear end face, the front end face and the rear end face being arranged in the second direction, the rear end face including the substrate end face, and the substrate end face extending along the reference plane; a first electrode disposed on the semiconductor laminate; and a metal film disposed on the rear end face, the semiconductor insulating portion and the second electrode, the metal film being apart from the first electrode.

Abstract: A quantum cascade laser includes a semiconductor substrate and an active layer having a cascade structure, in which unit layered bodies, each composed of a quantum well light emitting layer and an injection layer, are stacked, wherein the unit layered body has a subband level structure having an upper laser level, a lower laser level, and a relaxation miniband composed of at least two energy levels with an energy spacing smaller than the energy difference (EUL) between the upper laser level and the lower laser level, the energy width of the relaxation miniband is smaller than the energy (ELO?EUL) obtained by subtracting the energy difference (EUL) from the energy (ELO) of longitudinal optical phonons, and electrons subjected to the intersubband transition are relaxed in the relaxation miniband and are injected into a quantum well light emitting layer in a subsequent unit layered body.

Abstract: A quantum cascade laser includes a laser structure including first and second end faces, the laser structure including a semiconductor laminate region and a first embedding semiconductor region. The laser structure includes first and second regions arranged in a direction of a first axis extending from the first to second end faces. Each of the first and second regions includes the semiconductor laminate region. The semiconductor laminate region of the first region has a first recess. The semiconductor laminate region of the second region has a semiconductor mesa. The first recess and the semiconductor mesa extend in the direction of the first axis, and are aligned with each other. The semiconductor mesa has an end face extending in a direction of a second axis intersecting the first axis. The first embedding semiconductor region is disposed in the first recess so as to embed the end face of the semiconductor mesa.

Abstract: A method of manufacturing a semiconductor device includes: forming a light absorbing layer on a front surface of a semiconductor substrate or in the semiconductor substrate; forming a high concentration layer, in which an impurity concentration is increased, by implanting impurities into the semiconductor substrate; and heating the high concentration layer so as to activate the impurities in the high concentration layer. The formation of the light absorbing layer and the formation of the high concentration layer are performed such that the light absorbing layer and the high concentration layer at least partially overlap each other. The high concentration layer is heated by irradiating the high concentration layer with light from a front surface side of the semiconductor substrate in the heating of the high concentration layer.

Abstract: LED structures passivated with a III-N passivation material including Al. The III-N passivation material may reduce nonradiative recombination, reducing leakage current of an LED structure, and/or improve luminous efficacy. An LED structure may include III-N materials in a multiple quantum well (MQW) structure, and the III-N passivation material including Al may have a wider bandgap than any of the materials in the MQW structure. The III-N passivation material may be AlN, which can be deposited as a binary compound at low temperatures to maintain quality of the MQW structure. The III-N passivation material can be selectively deposited on a sidewall of at least the MQW structure. The III-N passivation material can be unselectively deposited over an LED structure and then etched to form a III-N spacer along a sidewall of at least the MQW structure. Energy efficient RGB micro(?) LED emissive displays may include passivated LED structures.

Abstract: A plurality of dies includes a gallium and nitrogen containing substrate having a surface region and an epitaxial material formed overlying the surface region. The epitaxial material includes an n-type cladding region, an active region having at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active region. The epitaxial material is patterned to form the plurality of dies on the surface region, the dies corresponding to a laser device. Each of the plurality of dies includes a release region composed of a material with a smaller bandgap than an adjacent epitaxial material. A lateral width of the release region is narrower than a lateral width of immediately adjacent layers above and below the release region to form undercut regions bounding each side of the release region. Each die also includes a passivation region extending along sidewalls of the active region.

Abstract: A light-emitting diode chip including a p-type semiconductor layer, a light-emitting layer and an n-type semiconductor layer is provided. The light-emitting layer is disposed between the p-type semiconductor layer and the n-type semiconductor layer. A ratio of a sum of thicknesses of all semiconductor layers of the light-emitting diode chip over a maximum width of the light-emitting diode chip ranges from 0.02 to 1.5. A ratio of a sum of thicknesses of all semiconductor layers located in a side of the light-emitting layer toward the p-type semiconductor layer over the sum of thicknesses of all semiconductor layers of the light-emitting diode chip ranges from 0.05 to 0.2.