Abstract: A method of producing an ultraviolet laser diode with a low oscillation threshold current density includes stacking a first cladding layer, a light-emitting layer, and a second cladding layer on a substrate in this order to form a nitride semiconductor laminate (step S101), etching at least a portion of the nitride semiconductor laminate to form a mesa structure and setting the ratio between the length of the resonator end faces and the length of the side surfaces of the mesa structure in plan view between 1:5 and 1:500 (step S102), disposing first conductive material on a portion of a first area and applying heat treatment of 400° C. or higher to form a first electrode (step S103), and disposing a second conductive material in an area on the second cladding layer, at a distance of 5 ?m or more from the side surfaces, to form a second electrode (step S104).

Abstract: A laser device according to an aspect of the present disclosure includes a chamber into which laser gas is introduced; a pair of electrodes arranged in the chamber; a power source configured to apply a voltage between the electrodes; a nozzle structure which includes an internal passage for receiving the laser gas and a slit connected to the internal passage and is configured to generate flow of the laser gas between the electrodes due to the laser gas blowing out from the slit; a gas flow path which has a suction port through which the laser gas in the chamber is suctioned and introduces, to the nozzle structure, the laser gas suctioned through the suction port; and a blower device configured to cause the laser gas to blow toward the internal passage of the nozzle structure through the gas flow path.

Abstract: A group III-V light-emitting diode is provided. The light-emitting diode includes a light generating portion including an active layer interposed between a first conductivity type semiconductor layer and a second conductivity type semiconductor layer. The active layer generates light. The light-emitting diode further includes an optical trap disposed on an optical path of light generated from the active layer. The optical trap includes a light absorption layer interposed between light guide layers. The light-emitting diode further includes a side reflector disposed on a side surface of the optical trap.

Abstract: An optical member holding device including a holding member, an optical member and an elastic member. The holding member has a recess defined by one or more lateral surfaces and a bottom surface with a through-hole opening at the bottom surface. The optical member is disposed on the bottom surface, and includes a light transmissive part. The optical member has an upper surface and one or more lateral surfaces. The elastic member consists of an inorganic material, and has a wavelike shape and disposed between the one or more lateral surfaces of the recess and the one or more lateral surfaces of the optical member so as to be in contact with the one or more lateral surfaces of the recess and the one or more lateral surfaces of the optical member to exert elastic force that secures the optical member to a predetermined location in the recess.

Abstract: In some implementations, a photonic transmission structure includes a first cladding structure; a first active structure disposed over the first cladding structure; and a second cladding structure disposed over the first active structure. The first active structure includes a non-alkali, oxide solution that includes a cation that is niobium.

Abstract: The invention relates to a laser assembly (1) comprising a diode laser bar (2), a heat sink (4) and at least one cover (7). The laser bar is located between the heat sink and the cover. The heat sink and/or the cover is/are coated with nanowires (16) or nanotubes via which the contact between the laser bar and the heat sink and/or the cover is established.

Abstract: The present invention suggests a method for manufacturing a micro-array light emitting diode comprising: a step for forming a semiconductor lamination structure by stacking an n-type semiconductor layer, an active layer, and a p-type semiconductor layer on a substrate; a step for forming a plurality of p-type electrodes so as to be arranged two-dimensionally apart from each other on the p-type semiconductor layer; and a step for forming an isolation part in the p-type semiconductor layer exposed between the plurality of p-type electrodes in a self-aligning manner.

Abstract: A corona discharge ionizer device which emits ions generated by corona discharge to a gas flow to be ionized includes a discharge electrode having a pin configured tip portion. A second grid electrode positioned at a spaced distance from the discharge electrode is provided. The grid electrode is preferably formed from a sheet configured material which has at least one hole formed therein adapted and configured to permit the gas flow to pass therethrough. A power supply is coupled to the discharge electrode and grid electrode configured cause ion emission from the discharge electrode. The power supply is preferably an alternating current power supply configured to produce an alternating electric field region in close proximity to the tip portion of the discharge electrode sufficient to cause avalanche breakdown in the gas flowing in close proximity to the tip portion of the discharge electrode.

Abstract: A laser apparatus according to embodiments may include a laser chamber including a laser gain medium; a power source; a first electrode to which a voltage is applied from the power source and a second electrode that is grounded, the first and second electrodes being disposed in the laser chamber; and a connector connected to the power source, and supporting the first electrode in a way that allows the first electrode to move toward a side where the second electrode is disposed.

Abstract: The tube includes a first electrode having a first electrode inner surface and a second electrode having a second electrode inner surface. The first electrode is separated, in a first transverse direction, from the second electrode thereby defining a gap region having a gap thickness between the first electrode inner surface and the second electrode inner surface. The tube further includes a first and a second elongated baffle member, each having a respective elongated central channel formed in an inner surface thereof.

Abstract: A laser gyro includes an optical block manufactured from a glass-ceramic first material having apertures, electrodes placed in the apertures of the optical block, and seals ensuring the hermeticity of the optical block in the location of the apertures. The seals use indium of a first redox potential. The laser gyro furthermore includes, making contact with the seal, at least one sacrificial electrode comprising a second material of a second redox potential, the second redox potential being lower than the first redox potential.

Abstract: An organic electroluminescence illuminating device (L) has a structure in which an organic electroluminescence element (10) is provided and encapsulated between a pair of substrates (20, 21). A light emitting surface of the organic electroluminescence element (10) has a portion which is not parallel to a light extraction surface of the entire illuminating device.

Abstract: A CO2 laser device and a CO2 laser processing device for emitting a pulse laser having a high output and a stable beam diameter without depending on a repetition frequency. The CO2 laser device includes: laser gas being a CO2 laser medium; a near-concentric stable optical resonator in which a radius of curvature of at least one resonator mirror is set so as to be equal to a distance from an optical switch to the resonator mirror; an optical switch provided in the stable optical resonator; and transmission mirrors provided so that laser light generated from the stable optical resonator passes through the CO2 laser medium again.

Abstract: A laser diode device includes a laminated structure in which a first compound semiconductor layer, a third compound semiconductor layer that has a light emitting region and a saturable absorption region, and a second compound semiconductor layer are sequentially layered, a second electrode, and a first electrode. The laminated structure has ridge stripe structure. The second electrode is separated into a first section to obtain forward bias state by applying a direct current to the first electrode through the light emitting region and a second section to add electric field to the saturable absorption region by an isolation trench. When minimum width of the ridge stripe structure is WMIN, and width of the ridge stripe structure of the second section of the second electrode in an interface between the second section of the second electrode and the isolation trench is W2, 1<W2/WMIN is satisfied.

Abstract: A laser diode includes a substrate and a junction layer disposed on the substrate. The junction layer forms a quantum well of the laser diode. The laser diode includes a junction surface having at least one channel that extends through the junction layer to the substrate. The at least one channel defines an anode region and a cathode region. A cathode electrical junction is disposed on the junction surface at the cathode region, and an anode electrical junction is disposed on the junction surface and coupled to the junction layer at the anode region. A cathode metal layer is disposed in at least a trench region of the channel. The cathode metal layer couples the substrate to the cathode electrical junction.

Abstract: A directly driven laser includes multiple contacts, with at least one of the contacts for injecting current into the laser such that the laser reaches at least a lasing threshold and at least one of the contacts for providing a data signal to the laser. In some embodiments a differential data signal is effectively provided to a front and a rear section of the laser, while lasing threshold current is provided to a central portion of the laser.

Abstract: Semiconductor laser diodes, particularly broad area single emitter (BASE) laser diodes of high light output powers are commonly used in opto-electronics. Light output power and stability of such laser diodes are of crucial interest and any degradation during normal use is a significant disadvantage. The present invention concerns an improved design of such laser diodes, the improvement in particular significantly minimizing or avoiding (front) end section degradation at very high light output powers by controlling the current flow in the laser diode in a defined way. This is achieved by controlling the carrier injection, i.e. the injection current, into the laser diode in a novel way by creating single current injection points along the laser diode's longitudinal extension, e.g. along the waveguide. Further, the supply current/voltage of each single or group of current injection point(s) may be separately regulated, further enhancing controllability of the carrier injection.

Abstract: A light emitting device includes first and second electrodes, a semiconductor laser element, a bonding wire, a transparent frame section, and a lid section. The first electrode includes a convex section, a bottom surface surrounding the convex section, and a first surface. The second electrode includes a first surface opposed to the bottom surface of the first electrode and a second surface. The second electrode includes an opening section and a step section receding toward the first surface from the second surface. The semiconductor laser element is provided on the convex section and includes a light-emitting layer. The bonding wire is capable of electrically connecting the semiconductor laser element and the step section. The transparent frame section surrounds the convex section and is bonded to the bottom surface and the first surface of the second electrode. The lid section is bonded to the second surface of the second electrode.

Abstract: A system and method for an electrically pumped laser system is disclosed. The system includes a silicon micro-ring resonator 405. A quantum well 412 formed of a III-V group semiconductor material is optically coupled with the micro-ring resonator 405 to provide optical gain. A trapezoidal shaped buffer 414 formed of a III-V group semiconductor material and doped with a first type of carrier is optically coupled to the quantum well 412. A ring electrode 410 is coupled to the trapezoidal shaped buffer 414. The trapezoidal shaped buffer 414 enables the ring electrode 410 to be substantially isolated from an optical mode of the micro-ring resonator 405.

Abstract: There is provided a driving method of a self-oscillating semiconductor laser device including a first compound semiconductor layer having a first conductive type and composed of a GaN base compound semiconductor, a third compound semiconductor layer and a second compound semiconductor layer configuring an emission region and a saturable absorption region, are successively laminated, a second electrode formed on the second compound semiconductor layer, and a first electrode electrically connected to the first compound semiconductor layer. The second electrode is separated into a first portion to create a forward bias state by passing current to the first electrode via the emission region and a second portion to apply an electric field to the saturable absorption region by a separation groove. The current greater than a current value where kink is occurred in optical output-current characteristics is to be passed to the first portion of the second electrode.

Abstract: A semiconductor laser diode comprises a semiconductor body having an n-region and a p-region laterally spaced apart within the semiconductor body. The laser diode is provided with an active region between the n-region and the p-region having a front end and a back end section, an n-metallization layer located adjacent the n-region and having a first injector for injecting current into the active region, and a p-metallization layer opposite to the n-metallization layer and adjacent the p-region and having a second injector for injecting current into the active region. The thickness and/or width of at least one metallization layer is chosen so as to control the current injection in a part of the active region near at least one end of the active region compared to the current injection in another part of the active region. The width of the at least one metallization layer is larger than a width of the active region.

Abstract: A nitride semiconductor laser device is provided herein that is reduced in capacitance to have a better response. The nitride semiconductor laser device includes: an active layer; an upper cladding layer which is stacked above the active layer; a low dielectric constant insulating film which is stacked above the upper cladding layer; and a pad electrode which is stacked above the low dielectric constant insulating film.

Abstract: A disclosed surface emitting laser device includes an oscillator structure including an active layer, semiconductor multilayer reflection mirrors sandwiching the oscillator structure, an electrode provided on an emitting surface where light is emitted in a manner such that the electrode surrounds an emitting region, and a dielectric film formed in at least one region outside a center part of the emitting region so that a refractive index of the region outside the center part of the emitting region is less than the refractive index of the center part of the emitting region. When viewed from an emitting direction of the light, a part of the electrode overlaps a part of the dielectric film.

Abstract: Illuminator module comprising VCSEL arrays with planar electrical contacts, readily adaptable for surface mounting, is provided. Monolithic VCSEL arrays are configured in array patterns on two and three-dimensional surfaces. Illuminator modules are easily expandable by increasing the array size or by modularly arranging more arrays with or without a transparent substrate. Different shapes of illuminator modules may be configured by tiling array modules monolithically on a common substrate, or by tiling small modules. The surface mountable illuminator modules are easily assembled on a thermally conductive surface that may be air or liquid cooled for efficient heat dissipation. Array modules may be integrated with other electronic circuits such as current drivers, sensors, controllers, processors, etc.

Abstract: A radiation-emitting device includes a first active semiconductor layer embodied for the emission of electromagnetic radiation and for direct contact with connection electrodes, and a second active semiconductor layer embodied for the emission of electromagnetic radiation and for direct contact with connection electrodes. The first active semiconductor layer and the second active semiconductor layer are arranged in a manner stacked one above another.

Abstract: A laser diode includes: a plurality of strip-shaped laser structures arranged in parallel with each other, and including a lower cladding layer, an active layer, and an upper cladding layer in this order; a plurality of strip-shaped upper electrodes singly formed on a top face of the respective laser structures, and being electrically connected to the upper cladding layer; a plurality of wiring layers being at least singly and electrically connected to one of the respective upper electrodes; and a plurality of pad electrodes formed in a region different from that of the plurality of laser structures, and being electrically connected to one of the respective upper electrodes with the wiring layer in between. The respective wiring layers have an end in a region different from a region where the respective wiring layers are contacted with the upper electrode.

Abstract: The present invention provides a semiconductor laser device including: a plurality of light emitting sections arranged in strip shapes in parallel; a plurality of first electrodes arranged along top faces of the light emitting sections, respectively; an insulating film covering a whole surface of the plurality of first electrodes, and including contact apertures corresponding to the first electrodes, respectively; a plurality of second electrodes arranged in positions different from those of the plurality of light emitting sections, correspondingly to the first electrodes; a plurality of wiring layers arranged on the insulating layer, and electrically connecting the second electrodes and the corresponding first electrodes through the contact apertures, respectively; and a plurality of window regions arranged for the light emitting sections in the insulating film so as to expose the first electrodes, respectively, and including at least two window regions having areas different from each other.

Abstract: A light emitting device includes a light emitting element mounting component, including a cubic package component formed of a silicon member covered with a insulating layer, and the package component including a bottom portion, a sidewall portion provided to stand upright on both ends of the bottom portion respectively, and a backwall portion provided to stand upright on an innermost part of the bottom portion, and the package component in which a cavity is provided in an inner side, and a light emitting element mounted on an inner side surface of the backwall portion of the package component, and including a light emitting surface on an upper end part, wherein a plurality of said light emitting element mounting components are stacked in a depth direction of the cavity to direct toward an identical direction.

Abstract: In one embodiment, a semiconductor laser includes a semiconductor laminated body formed in a ring shape and first and second electrodes. The semiconductor laminated body includes an active layer, first and second cladding layers formed on both sides of the active layer, first and second contact layers formed on the first and second cladding layers, and first and second modified layers. The first and second modified layers are formed by selectively modifying the inner peripheral sidewalls and the outer peripheral sidewalls of the first and second cladding layers so as to have a refractive index lower than the refractive indexes of the first and second cladding layers. The first and second contact layers are electrically connected to the first and second electrodes.

Abstract: Corrosion resistant electrodes are formed of brass that has been doped with phosphorus. The electrodes are formed of brass that contains about 100 ppm to about 1,000 ppm of phosphorus, and the brass has no visible microporosity at a magnification of 400×. The brass may be cartridge brass that contains about 30 weight percent of zinc and the balance copper. Corrosion resistant electrodes also may be formed by subjecting brass to severe plastic deformation to increase the resistance of the brass to plasma corrosion. The corrosion resistant electrodes can be used in laser systems to generate laser light.

Abstract: A high power source of electro-magnetic radiation having a multi-purpose housing is disclosed. The multi-purpose housing includes an interior filled with a material forming at least a light source and further comprising a reflector which can envelope a laser rod surrounded by light sources for providing light excitation to the laser rod. A material defining outer surfaces of the light sources extends out to and defines outer surfaces of the reflector. A high-reflectivity coating is disposed over an outer surface of the reflector, as is a protective coating. Also disposed over an outer surface of the reflector can be an optional heat sink, with cooling being performed by an optional arrangement of forced-air traveling over the heat sink. The light sources may be light source pumps, and the high-reflectivity coating may be formed to envelop the reflector.

Abstract: A laser diode includes a junction surface configured to interface with an integrated optics slider. Cathode and anode electrical junctions are disposed on the junction surface. The cathode and anode electrical junctions are configured for electrical and mechanical coupling to the integrated optics slider. At least one test pad is disposed on the junction surface that is physically separate from and electrically coupled to one of the cathode and anode electrical junctions. The test pad is configured to be contacted by a test probe and is not configured for electrical or mechanical coupling to the integrated optics slider.

Abstract: A movable electrode assembly for use in a laser system, includes a first electrode having a first discharge surface, a second electrode having a second discharge surface. The second electrode being arranged opposite from the first electrode. The second discharge surface being spaced apart from the first discharge surface by a discharge gap. A discharge gap adjuster interfaced with at least one of the second electrode or the first electrode, the discharge gap adjuster configured to adjust the discharge gap. A method of adjusting a discharge gap is also disclosed.

Abstract: A method for producing light emission from a two terminal semiconductor device with improved efficiency, includes the following steps: providing a layered semiconductor structure including a semiconductor drain region comprising at least one drain layer, a semiconductor base region disposed on the drain region and including at least one base layer, and a semiconductor emitter region disposed on a portion of the base region and comprising an emitter mesa that includes at least one emitter layer; providing, in the base region, at least one region exhibiting quantum size effects; providing a base/drain electrode having a first portion on an exposed surface of the base region and a further portion coupled with the drain region, and providing an emitter electrode on the surface of the emitter region; applying signals with respect to the base/drain and emitter electrodes to obtain light emission from the base region; and configuring the base/drain and emitter electrodes for substantial uniformity of voltage distrib

Abstract: This semiconductor laser apparatus includes a base, a plurality of electrodes arranged along a first direction on an upper surface of the base, a plurality of semiconductor laser devices bonded to respective upper surfaces of the plurality of electrodes, emitting laser beams in a second direction, and a photodetector having a photosensitive surface arranged in a region of the base in a third direction relative to the plurality of semiconductor laser devices. An electrode arranged in a position other than end portions in the first direction and a fourth direction, of the plurality of electrodes has an extraction wiring portion arranged on the photosensitive surface of the photodetector.

Abstract: A movable electrode assembly for use in laser system includes a first electrode, a second electrode arranged opposite from the first electrode, the second electrode being spaced apart from the first electrode by a discharge gap and a discharge gap adjuster interfaced with at least one of the second electrode or the first electrode, the discharge gap adjuster configured to adjust the discharge gap. A movable electrode assembly for integration into a housing of a laser system includes a first electrode having a discharge surface, a second electrode having a discharge surface, such that the discharge surface of the first electrode and the discharge surface of the second electrode face each other in a spaced apart setting that defines a desired discharge gap, and a mechanism for moveably adjusting the spaced apart setting toward the desired discharge gap. A method of adjusting a discharge gap is also disclosed.

Abstract: A semiconductor light emitting device includes: a stacked body including a first and a second semiconductor layers of a first and second conductivity types respectively, and a light emitting layer provided between thereof; a first and a second electrodes in contact with the first and second semiconductor layers respectively. Light emitted is resonated between first and second end surfaces of the stacked body opposed in a first direction. The second semiconductor layer includes a ridge portion and a wide portion. A width of the ridge portion along a second direction perpendicular to the first and the stacking directions is narrower on the second electrode side than on the light emitting layer side. A width of the wide portion along the second direction is wider than the ridge portion.

Abstract: Metallization patterns are provided to reduce the probability of chip fracture in semiconductor lasers. According to one embodiment disclosed herein, the pad edges of a metallization pattern extend across a plurality of crystallographic planes in the laser substrate. In this manner, cracks initiated at any given stress concentration would need to propagate across many crystallographic planes in the substrate to reach a significant size. Additional embodiments of the present disclosure relate to the respective geometries and orientations of adjacent pairs of contact pads. Still further embodiments are disclosed and claimed.

Abstract: Provided is a nitride semiconductor laser device that is reduced in capacitance to have a better response. The nitride semiconductor laser device includes: an active layer; an upper cladding layer which is stacked above the active layer; a low dielectric constant insulating film which is stacked above the upper cladding layer; and a pad electrode which is stacked above the low dielectric constant insulating film.

Abstract: In a stripline laser, a gas mixture containing carbon dioxide is situated as a laser-active medium between two plate-type electrodes lying with their flat sides opposite one another. The electrodes define a discharge space, at whose end sides lying opposite one another a resonator mirror is respectively arranged. The resonator mirrors form an unstable resonator. To operate the stripline laser in the 9.3 ?m band and/or in the 9.6 ?m band, the electrodes are provided with a passivation layer on their flat sides. The passivation layer, of at least one electrode, contains silicon dioxide in a region covering a partial area of a flat side. A distance between the electrodes is set such that the attenuation of laser beams in the 10.3 ?m band and in the 10.6 ?m band is greater than the attenuation of laser beams in the 9.3 ?m band and/or in the 9.6 ?m band.

Abstract: In a stripline laser, a gas mixture containing carbon dioxide is situated as a laser-active medium between two plate-type electrodes lying with their flat sides opposite one another. The electrodes define a discharge space, at whose end sides lying opposite one another a resonator mirror is respectively arranged. The resonator mirrors form an unstable resonator. To operate the stripline laser in the 9.3 ?m band and/or in the 9.6 ?m band, the electrodes are provided with a passivation layer on their flat sides. The passivation layer, of at least one electrode, contains silicon dioxide in a region covering a partial area of a flat side. A distance between the electrodes is set such that the attenuation of laser beams in the 10.3 ?m band and in the 10.6 ?m band is greater than the attenuation of laser beams in the 9.3 ?m band and/or in the 9.6 ?m band.

Abstract: A semiconductor light emitting element, comprises: an active layer; a first electrode and second electrode that inject current to the active layer; a semiconductor layer between the active layer and the first electrode; and a dielectric layer that is provided on the semiconductor layer and through which light from the active layer passes; wherein the first electrode is provided on the semiconductor layer, has an opening through which light from the active layer passes, and comprises a first electrode layer that comes in contact with and is provided on the semiconductor layer, and a second electrode layer that is provided on the first electrode layer, with the first electrode layer having less reactivity with the semiconductor layer than the second electrode layer; and the dielectric layer is provided inside the opening such that the end section on the opening side of the first electrode layer extends from the top of the semiconductor layer to the top of the dielectric layer.

Abstract: A movable electrode assembly for use in a laser system, includes a first electrode having a first discharge surface, a second electrode having a second discharge surface. The second electrode being arranged opposite from the first electrode. The second discharge surface being spaced apart from the first discharge surface by a discharge gap. A discharge gap adjuster interfaced with at least one of the second electrode or the first electrode, the discharge gap adjuster configured to adjust the discharge gap. A method of adjusting a discharge gap is also disclosed.

Abstract: Arcing is minimized in a discharge chamber of a gas laser system by utilizing an electrode which comprises a surface portion capable of functioning as one of an anode and a cathode in order to energize a gas mixture in a discharge chamber of the gas discharge laser system, a shoulder portion being positioned on either side of the surface portion and being exposed to the gas mixture, and a coating layer made of electrically insulating material, wherein the coating layer is attached to the shoulder portion by a cold spraying method.

Abstract: A method for producing a high frequency optical signal component representative of a high frequency electrical input signal component, includes the following steps: providing a semiconductor transistor structure that includes a base region of a first semiconductor type between semiconductor emitter and collector regions of a second semiconductor type; providing, in the base region, at least one region exhibiting quantum size effects; providing emitter, base, and collector electrodes respectively coupled with the emitter, base, and collector regions; applying electrical signals, including the high frequency electrical signal component, with respect to the emitter, base, and collector electrodes to produce output spontaneous light emission from the base region, aided by the quantum size region, the output spontaneous light emission including the high frequency optical signal component representative of the high frequency electrical signal component; providing an optical cavity for the light emission in the regi

Abstract: Populations of Salmonella in animals may be substantially reduced by treatment with a vaccine composition which has been produced by exposing whole, intact cells of a Salmonella species to irradiation with an electron beam under conditions effective to kill the cells. The electron beam irradiated cells of Salmonella are effective for stimulating protective immune responses in the animals against the Salmonella. Induction of these immune responses significantly reduces or eliminates the colonization of the animal by the Salmonella, and consequently reduces or eliminates the shedding of Salmonella in the feces of the animals.

Abstract: Provided is a two-dimensional photonic crystal surface emitting laser which can suppress light leaking outside in an in-plane direction of the two-dimensional photonic crystal and an absorption loss in an active layer caused by the latter layer serving as an absorbing layer without contributing to light emission, and can improve light use efficiency. The surface emitting laser has a laminated structure in which an active layer and a photonic crystal layer are laminated in a vertical direction, has a resonance mode in an in-plane direction of the photonic crystal, and light is extracted in a vertical direction to a surface of the photonic crystal, wherein the laminated structure has a multi-refractive index layer including a central region made of a high refractive index medium and a peripheral portion made of a low refractive index medium with a lower refractive index than that of the high refractive index medium.

Abstract: A method is provided for controlling a DBR laser diode wherein front and rear DBR section heating elements are controlled such that the reflectivity of the rear grating portion of the DBR section is lower than the reflectivity of the front grating portion of the DBR section. In this manner, lasing mode selection is dominated by the front grating portion and the front DBR section heating element can be controlled for wavelength tuning. In addition, the rear DBR section heating element can be controlled to narrow the spectral bandwidth of the DBR reflection spectra. Additional embodiments are disclosed and claimed.

Abstract: A CO2 gas discharge laser includes a housing enclosing spaced-apart electrodes and a lasing gas. A laser resonator extends between the spaced-apart electrodes. An RF power supply provides RF power for creating a discharge in the lasing gas, causing laser radiation to be delivered by the laser resonator. The power of the output radiation is directly dependent on the RF power provided to the electrodes and inversely dependent of the temperature of the gas discharge. A signal representative of the discharge-temperature is used to adjust the RF power supplied to the electrodes such that the power of the output radiation is about constant.

Abstract: There is described a gas laser comprising a pair of substantially mutually parallel and opposed electrodes (17, 37), between which a volume is defined containing a gas in which said electrodes generate a discharge. At opposed ends of the electrodes, in said volume, mirrors (65) are arranged to define a resonant cavity. The electrodes form an integral part of two portions (5, 7) of a sealed housing (1), containing the gas and in which the mirrors and the electrodes are housed. The two portions (5, 7) forming the housing are electrically connected.