Abstract: A semiconductor laser chip is mounted on one surface of an electrode lead for chip mounting having a heat release region for releasing heat around the semiconductor laser chip. Therefore, it is possible to release heat of the semiconductor laser chip to the chip mounting lead and release the heat from the heat release region, thereby suppressing increase of a temperature of the semiconductor laser chip and suppressing shortening of life of the semiconductor laser chip.

Abstract: The object of the invention in an arrangement for generating extreme ultraviolet radiation based on an electrically operated gas discharge is to reduce the time required for charging the electrodes by reducing the inductance of the discharge circuit. A high-voltage power supply connected to the electrodes which are constructed as disk electrodes and are rotatably mounted has a capacitor battery comprising capacitor elements which are arranged along a ring concentric to the axis of rotation of the electrodes with a ring plane directed parallel to the disk surface. Electrical connections are guided to the disk surfaces from the capacitor elements along a ring concentric to the axis of rotation.

Abstract: In a semiconductor laser device (10) having different facet reflectivities, an electrode disposed on a stripe ridge (107a) is divided into four electrode parts (1), (2), (3), and (4), and a larger injection current is injected to an electrode part that is closer to a light emission facet side. Further, a carrier density distribution in an active layer that is opposed to the stripe ridge can be matched to a light intensity distribution in the active layer, thereby preventing degradation in high output characteristic due to destabilization of a transverse mode and reduction in gain which are caused by spatial hole burning.

Abstract: An optical device chip includes: a first semiconductor layer of a first conductivity type; an optical layer that emits light or receives light formed above the first semiconductor layer; a second semiconductor layer of a second conductivity type formed above the optical layer; a first electrode electrically connected to the first semiconductor layer; a second electrode electrically connected to the second semiconductor layer; and a connecting section that short-circuits the first electrode and the second electrode.

Abstract: An RF excited gas laser including an offset V-shaped laser cavity. The laser includes a first and second ceramic body portions with the laser cavity at least partially defined by the ceramic body portions. At least one internal gas reservoir is also at least partially defined by the first and second body portions, with the internal gas reservoir being in gas communication with laser cavity by way of at least one gas communication slot. The RF laser further includes at least two electrode slots formed in the exterior of the ceramic body portions and an electrode at least partially received in the electrode slots.

Abstract: A light-emitting device is disclosed as typified by a laser oscillator formed by an electroluminescent material with improved oscillation efficiency of laser light and even reduced power consumption. The disclosed light-emitting device comprises a light-emitting element including a first electrode having a concave portion, an electroluminescent layer serving as a laser medium formed over the first electrode so as to be overlapped with the concave portion, and a second electrode formed over the electroluminescent layer so as to be overlapped with the concave portion, wherein light generated in the electroluminescent layer is resonated between the first electrode and the second electrode and emitted as laser light from the second electrode, an optical axis of the laser light intersects with the second electrode, the first electrode has a curved surface at the concave portion, and a center of curvature of the curved surface is located at the side of the second electrode above the first electrode.

Abstract: An optical element includes a columnar section having an upper surface from which light is emitted or upon which light is incident, and an electrode composed of a plurality of layers including at least a first conductive layer and a second conductive layer laminated above the first conductive layer and electrically connected to the upper surface of the columnar section, wherein the first conductive layer has a first opening section that opens outwardly from a center section of the upper surface of the columnar section and surrounds the center section, and the second conductive layer has a second opening section that opens outwardly from the center section of the upper surface of the columnar section, surrounds the center section, and overlaps the first conductive layer above the columnar section by more than a half of a plane area of the first conductive layer.

Abstract: An electrode structure includes a first conductive layer, an insulation layer that covers at least a portion of a marginal area of an upper surface of the first conductive layer and has a first sloped section that slopes down toward the upper surface of the first conductive layer, a first electrode having one end formed on the first conductive layer and another end formed on the first sloped section, a third electrode that is formed on the first electrode and the insulation layer, and covers the another end of the first electrode.

Abstract: An opto-semiconductor device. An opto-semiconductor element includes a semiconductor substrate, a multilayered semiconductor layer formed on a first surface of the semiconductor substrate and having a resonator, a first electrode with multiple conductive layers formed on the multilayered semiconductor layer, and a second electrode formed on a second surface of the semiconductor substrate. A support substrate has a first surface formed with a fixing portion having a conductive layer for fixing the first electrode connected thereto through a bonding material. Bonding material and conductive layers forming the first electrode react to form a reaction layer. The difference in thermal expansion coefficient between semiconductor substrate and support substrate is not more than ±50%. A second barrier metal layer not reactive with bonding material is formed inside the first electrode uppermost conductive layer, while uppermost layer reacts with the bonding material to form the reaction layer.

Abstract: In a semiconductor laser device (LD1), a semiconductor laser layer is formed on one face of a semiconductor substrate (1), and a p-type electrode (8) and an n-type electrode (11) are provided on the semiconductor laser layer side and the semiconductor substrate (1) side, respectively, so as to sandwich the semiconductor laser layer and the semiconductor substrate (1) therebetween. The p-type electrode (8) includes a first electrode (9) and a second electrode (10) that covers the first electrode (9).

Abstract: A laser-induced optical wiring apparatus includes a substrate, first and second light-reflecting members provided on the substrate separately from each other, an optical waveguide provided on the substrate for optically coupling the first and second light-reflecting members to form an optical resonator, a first optical gain member provided across the optical waveguide and forming a laser oscillator along with the first and second light-reflecting members, and a second optical gain member provided across the optical waveguide separately from the first optical gain member, and forming another laser oscillator along with the first and second light-reflecting members.

Abstract: Arcing is minimized in a discharge chamber of a gas laser system by utilizing an electrode which comprises a surface portion capable of functioning as one of an anode and a cathode in order to energize a gas mixture in a discharge chamber of the gas discharge laser system, a shoulder portion being positioned on either side of the surface portion and being exposed to the gas mixture, and a coating layer made of electrically insulating material, wherein the coating layer is attached to the shoulder portion by a cold spraying method.

Abstract: A surface-emitting type semiconductor laser includes a first mirror, an active layer formed above the first mirror, a second mirror formed above the active layer, a first electrode formed above the second mirror, and a second electrode formed above the first electrode, wherein each of the first electrode and the second electrode has an opening section, and the opening section of the first electrode is formed inside the opening section of the second electrode in a plan view.

Abstract: A two phase reactor includes a source of liquid reactant and a source of gas reactant. A chamber has an inlet coupled to the source of gas reactant and a flat jet nozzle coupled to the source of the liquid reactant.

Abstract: A semiconductor laser device comprises: an active layer; a cladding layer of a first conductivity type; an insulating film; a first electrode; and a pad electrode provided on the first electrode. The cladding layer is provided above the active layer, and has a ridge portion constituting a striped waveguide and non-ridge portions adjacent to both sides of the ridge portion. The insulating film is covering side faces of the ridge portion and an upper face of the non-ridge portions. The first electrode has a gap portion provided above the non-ridge portions. The pad electrode is provided on the first electrode.

Abstract: A fast current-controlled polarization switching VCSEL with two independent intra-cavity p-contact electrodes and two independent intra-cavity n-contact electrodes positioned along the four sides of the symmetric aperture such that there are two independent p- and n-contact pairs placed on opposite sides of the aperture in a non-overlapping configuration. The anisotropy resulting from the unidirectional current flow causes the light output to be polarized perpendicular to the direction of current flow. A VCSEL driver circuit switches the polarization state of the output light by using the two orthogonal pairs of non-overlapping intra-cavity contacted electrodes to change the direction of current flow into the VCSEL aperture by 90 degrees.

Abstract: A multibeam laser apparatus and an image forming device using the same. The multibeam laser beam apparatus includes a common electrode unit, a plurality of light source units to emit light using the common electrode unit, and an isolating unit to interconnect the common electrode unit and the plurality of light source units. With such configuration for example, the laser apparatus can reduce distances between the respective light source units and the number of the electrodes, and thus reduce the number of wires and legs to produce a compact chip.

Abstract: Fluorine gas discharge laser electrodes and electrode systems that may comprise a plurality of current return tangs extending for less than the respective length of the second elongated gas discharge electrode. In addition electrodes may comprise a first discharge shaping magnet mounted in a first elongated gas discharge electrode and a second discharge shaping magnet mounted in a second elongated gas discharge electrode. Also is an electrode may comprise a crown straddling the centerline axis between the pair of side walls and the pair of end walls, comprising a first material, forming at least a portion of the discharge region of the electrode and a pair of elongated high erosion regions on either side of the crown comprising a second material with a relatively higher erosion rate during gas discharge than that of the first material.

Abstract: An apparatus, system, and method for an excimer laser having lasing gas and electron emitters emitting electrons upon the application of an emitting voltage is described herein.

Abstract: A gas discharge laser includes a laser chamber containing a halogen laser gas, two electrode elements defining a cathode and an anode, each having a discharge receiving region defining two longitudinal edges and having a region width defining a width of an electric discharge between the electrode elements in the laser gas. The anode comprising a first anode portion comprising a first anode material defining a first anode material erosion rate, located entirely within the discharge receiving region, a pair of second anode portions comprising a second anode material defining a second anode material erosion rate, respectively located on each side of the first anode portion and at least partially within the discharge receiving region; an electrode center base portion integral with the first anode portion; and wherein each of the respective pair of second anode portions is mechanically bonded to the center base portion.

Abstract: CO2 slab laser having a gas-filled tubular housing, sealed off at both ends by end pieces, which accommodates two overlapping electrodes extending into the tubular housing and mirrors arranged in the region of the electrodes, where each of the two end pieces holds an electrode, the mirrors are arranged stationary relative to the electrodes and the electrodes, jointly with the mirrors, are adjustable relative to one another.

Abstract: Provided are an optical active device and optical module using the same The optical active device includes first face through which light received emitted, second face facing the first face third face adjacent the first face and the second face, and fourth face facing the third face which width between the first face and the second face equal greater than distance between the third face and the fourth face

Abstract: A slab laser includes two elongated electrodes arranged spaced apart and face-to-face. Either one or two slabs of a solid dielectric material extend along the length of the electrodes between the electrodes. A discharge gap is formed either between one of the electrodes and one dielectric slab, or between two dielectric slabs. The discharge gap is filled with lasing gas. A pair of mirrors is configured and arranged to define a laser resonator extending through the gap. An RF potential is applied across the electrodes creating a gas discharge in the gap, and causing laser radiation to circulate in the resonator. Inserting dielectric material between the electrodes increases the resistance-capacitance (RC) time constant of the discharge structure compared with the RC time constant in the absence of dielectric material.

Abstract: A semiconductor laser diode including a substrate, and a first semiconductor layer, an active layer, a second semiconductor layer and an electrode sequentially formed on the substrate is provided. In the semiconductor laser diode, the second semiconductor layer has a ridge and the electrode is formed on the ridge of the second semiconductor layer at a width which is less than the width of the ridge.

Abstract: The present invention provides a light emitting device typified by a laser oscillator using an electroluminescent material that can enhance directivity of emitted laser light and resistance to a physical impact. A light emitting device includes a first electrode having a convex portion or a concave portion, an electroluminescent layer formed over the first electrode to overlap the convex portion or the concave portion, and a second electrode having a convex portion or a concave portion formed over the electroluminescent layer to overlap the convex portion or the concave portion. In the light emitting device, the first electrode has a curved surface in the convex portion or the concave portion, a center of a curvature of the curved surface is located on an opposite side of the second electrode, and laser light is emitted by oscillating light generated in the electroluminescent layer between the first electrode and the second electrode.

Abstract: An slab CO2 laser includes spaced-apart elongated slab electrodes. A lasing gas fills a discharge gap between the electrodes. An RF power supply is connected across the electrodes and sustains an electrical discharge in the lasing gas in the discharge gap. Either one or two ceramic inserts occupy a portion of width of the electrodes and in contact with the electrodes. A discharge gap is formed between the portions of the width of the electrodes not occupied by the insert or inserts. Provision of the ceramic insert or inserts increases the resistance-capacitance (RC) time constant of the electrode impedance by increasing the capacitive component of the time constant. This hinders the formation of arcs in the discharge, which, in turn enables the inventive laser to operate with higher excitation power or higher lasing-gas pressure than would be possible without the dielectric insert. The ceramic insert also decreases the difference in impedance of the electrodes with and without a discharge.

Abstract: A surface emitting semiconductor laser includes a laminate of semiconductor layers emitting multimode laser light, and a block member blocking light of a specific mode among the multimode laser light emitted from the laminate.

Abstract: A laser waveguide, where the laser waveguide can be formed by electrodes and at least one sidewall in a manner allowing a more compact structure than previously provided. Protrusions in the electrodes allow easier laser starts, and sectional sidewall(s) allow easier fabrication of sidewall(s), decreasing manufacturing costs.

Abstract: Electrodes for a fluorine gas discharge laser are disclosed which may comprise a crown straddling the centerline axis between the pair of side walls and the pair of end walls, comprising a first material, forming at least a portion of the discharge region of the electrode; the crown in traverse cross section having the shape of the upper half of a canted ellipse rotated in the preionizer direction, such that a tangent to the short centerline axis of the ellipse forms an angle with the horizontal. Another embodiment may comprise an anode blade having a top portion and a first and second sidewall portion each intersecting the top portion; the anode blade being formed with the shape in cross section of the top portion being curvilinear and intersecting the generally straight potions of each of first and second sidewall portions along a radius of curvature and with the top portion beveled away from an asymmetric discharge side of the anode.

Abstract: Semiconductor laser diodes, particularly high power AlGaAs-based ridge-waveguide laser diodes, are often used in opto-electronics as so-called pump laser diodes for fiber amplifiers in optical communication lines. To provide the desired high power output and stability of such a laser diode and avoid degradation during use, the present invention concerns an improved design of such a device, the improvement in particular significantly minimizing or avoiding (front) end section degradation of such a laser diode and significantly increasing long-term stability compared to prior art designs. This is achieved by establishing one or two “unpumped end sections” of the laser diode. One preferred way of providing such an unpumped end section at one of the laser facets (10, 12) is to insert an isolation layer (11, 13) of predetermined position, size, and shape between the laser diode's semiconductor material and the usually existing metallization (6).

Abstract: Controlled avalanche driver circuits and apparatuses for gas lasers. One embodiment typically delivers short, rapid, high voltage ionizing pulses in combination with an electric field whose magnitude is too low to sustain a normal glow discharge. The plasma is typically impedance matched with the pulse-forming network. Pre-ionization pulses may be generated. The circuits enable very high power, stable lasers.

Abstract: A nitride semiconductor light emitting device includes at least a substrate, an active layer formed of a nitride semiconductor containing mainly In and Ga, a p-electrode and an n-electrode. At least one of the p-electrode and n-electrode is electrically separated into at least two regions.

Abstract: A laser waveguide, where the laser waveguide can be formed by electrodes and at least one sidewall in a manner allowing a more compact structure than previously provided. Protrusions in the electrodes allow easier laser starts, and sectional sidewall(s) allow easier fabrication of sidewall(s), decreasing manufacturing costs.

Abstract: An excimer laser with a laser chamber containing a circulating laser gas containing fluorine and long-life, annealed, copper alloy electrodes. Electrode lifetime is increased by annealing them after the electrodes are machined. This annealing relieves the surface stress caused by the machining operation and reduces the exposed metallic grain boundary length per unit area on the surface of the electrodes, which provides substantial reduction in erosion caused by fluorine chemical attack. Annealing after machining also reduces the stress throughout the bulk of the electrode material. In preferred embodiments the anode is a copper-aluminum alloy and the cathode is a copper-zinc alloy.

Abstract: Submount substrates are connected to both sides of a laser diode via hard solders. The lower submount substrate and a heat sink are connected together by a soft solder. The heat sink and a presser electrode are fixed with a predetermined gap therebetween via an insulating spacer. A coil electrode is fitted in a V-shaped groove of the presser electrode. As the coil electrode is deformed slightly elastically, the coil electrode is pressed against the upper submount substrate.

Abstract: A fluorine gas discharge laser electrode for a gas discharge laser having a laser gas containing fluorine and a method for manufacturing an electrode is disclosed. The electrode may include a copper and copper alloy body having an upper curved region containing a discharge footprint and a lower portion. In one aspect of an embodiment of the present invention, the upper region may include copper and the lower region may include a copper alloy. A portion of the electrode facing a gas discharge region may be formed in an arcuate shape extending into straight line portions on either side of the arcuate portion. The straight line portions may terminate in vertical straight sides.

Abstract: A system that transmits amplitude modulated data in a wavelength-encoded format and then uses a wavelength-sensitive receiver to convert the received optical signal back to the original amplitude modulated data. This system enables transmission of optical signals that are less sensitive to attenuation and attenuation changes. This system is applicable to data in digital, multilevel, or analog formats.

Abstract: An electric field that changes across space is synthesized, by applying voltage levels independent of one another at several locations. The independence in voltage levels allows the electric field that is synthesized to be made periodic or aperiodic. Such a synthesized electric field may be changed at any time for use in, for example, a tunable laser. In one embodiment, the voltage levels are oversampled, although in other embodiments the voltage levels need not be oversampled, e.g. if the to-be-synthesized electric field is aperiodic. Also, in one embodiment, the electric field is used to change the refractive index of an electro-optic substance (such as lithium niobate) in an optical filter. Such an optical filter can be used as part of a wavelength agile laser or in an optical add drop multiplexer or in an optical switch. Such a filter can also be used for dynamic power balancing and/or for dynamic gain equalization.

Abstract: Arcing can be minimized in a discharge chamber of an excimer or molecular fluorine laser system by utilizing an improved electrode structure. An electrode structure can include at least one ceramic spoiler positioned near the discharge region of the electrode. An insulating ceramic spoiler can reduce the effective area over which arcing can occur, and can reduce the likelihood of arcing by improving the flow of gas between the electrodes, such as by allowing for design flexibility and reducing the necessary height of a nose portion used to control the discharge area of the electrode. An improved blower design, which can utilize improved bearings and a dry film lubricant, can help to circulate the laser gas between the electrode structures, such as at a speed of at least 30 m/s in order to operate the laser at repetition rates of 4 kHz or higher.

Abstract: Electric field easing members (corona rings) for easing concentration of electric fields caused at edges of a core are disposed between the core and a winding to form a gap so to allow the presence of a cooling medium (insulating oil) between the top and bottom surfaces of the core and the electric field easing members. Thus, pressboards between the core and the electric field easing members become unnecessary, a wire-wound apparatus can be prevented from having a short service life due to the degradation of the pressboards, and the pressboards can be made to have a long service life because the electric field easing members are not heated by thermal conduction from the core.

Abstract: An electrooptic device (1) such as a distributed feed back semiconductor laser or a semiconductor modulator comprises an optical waveguide. A contact layer (11) is applied to the optical waveguide for conducting electrical current to the device for driving or modulating it. The contact layer is connected to the end of an electrically conducting path (3) and can have a shape, as seen perpendicularly to the surface of the device, to give an electric resistance between the end of the path and different areas at the optical waveguide which resistance is higher for areas located close to the ends of the device than for areas are located at the central region of the device. The shape can be si-milar to a trapezium having concave oblique sides and is selected so that the resulting varying electrical resistance gives a sub-stantially uniform electrical power or gain inside the optical waveguide, taken in the longitudinal direction of the waveguide.

Abstract: A design of a vertical cavity surface emitting laser chip suitable for high speed data communication. An intracavity contact to the doped layers of the bottom mirror is formed so that both contacts are on the top epitaxial side of the wafer. These main structural features can be used to reduce the bond pad capacitance by a suitable spatial separation of metallizations of the p and n contact. The bond pads are processed as a short symmetric coplanar line in a ground signal ground configuration which allows flexible device testing and packaging. A significant capacitance between the pads of the center strip and the outer ground strips is avoided by etching the doped semiconductor layers between these strips down to the semi-insulating substrate. This design avoids pad metallizations and the corresponding critical photolithographic steps over large height differences from the vertical cavity surface emitting laser mesa top to the substrate.

Abstract: A laser waveguide, where the laser waveguide can be formed by electrodes and at least one sidewall in a manner allowing a more compact structure than previously provided. Protrusions in the electrodes allow easier laser starts, and sectional sidewall(s) allow easier fabrication of sidewall(s), decreasing manufacturing costs.

Abstract: A gas discharge laser having an elongated cathode and an elongated anode with a porous insulating layer covering the anode discharge surface. A pulse power system provides electrical pulses at rates of at least 1 KHz. A blower circulates laser gas between the electrodes at speeds of at least 5 m/s and a heat exchanger is provided to remove heat produced by the blower and the discharges. In preferred embodiments at least a portion of the anode is comprised of lead, and fluorine ion sputtering of the anode surface creates the insulating layer (over the discharge surface of the anode) comprised in large part of lead fluoride. In a particular preferred embodiment the anode is fabricated in two parts, a first part having the general shape of a prior art anode with a trench shaped cavity at the top and a second part comprised of lead rich brass and disposed in the trench shape cavity.

Abstract: An axial direction excitation type F2 laser apparatus comprises a discharge tube consisting of an insulating cylinder and metal electrodes at both ends of thereof, and a reflecting mirror or a transmitting mirror, constituting a resonator, outside the electrodes. A high voltage for pulse discharge is applied to the electrodes from a drive circuit. Total gas pressure in the discharge tube is set in a range between 10 Torr. and 100 Torr., and concentration of F2 gas to total gas in the discharge tube is set to be in a range between 0.2% and 2.0%. This low-pressure axial direction excitation type F2 laser apparatus having small size and high efficiency can be provided at a low cost.

Abstract: A semiconductor laser element that has window regions at its opposite end faces and an electrode portion superposed on an inner portion of the upper surface thereof to include covering an inner portion of the upper surfaces of the window regions without covering the entire upper surfaces of the window regions, by aligning a photomask for forming electrode pattern segments at a predetermined position over a laser substrate, which includes a plurality of element regions in a matrix pattern and a plurality of window region pattern stripes corresponding to the window regions of the element regions, the electrode pattern segments being used for forming electrodes at predetermined positions between the adjacent window region pattern stripes, wherein the photomask includes: an electrode pattern region for forming the electrode pattern segments; and an auxiliary mask having a scale section for measuring the amount of alignment deviation of the electrode pattern segments with respect to the window region pattern.

Abstract: A gas discharge laser having an elongated cathode and an elongated anode with a porous insulating layer covering the anode discharge surface. A pulse power system provides electrical pulses at rates of at least 1 KHz. A blower circulates laser gas between the electrodes at speeds of at least 5 m/s and a heat exchanger is provided to remove heat produced by the blower and the discharges. In preferred embodiments at least a portion of the anode is comprised of lead, and fluorine ion sputtering of the anode surface creates the insulating layer (over the discharge surface of the anode) comprised in large part of lead fluoride. In a particular preferred embodiment the anode is fabricated in two parts, a first part having the general shape of a prior art anode with a trench shaped cavity at the top and a second part comprised of lead rich brass and disposed in the trench shape cavity.

Abstract: A diode laser having a plurality of layers including a thin (e.g., about 0.3 ?m or less) p-type cladding layer, the plurality of layers having a substantially asymmetric refractive index profile with respect to the layer growth direction to produce an optical field distribution with a larger fraction of the distribution in n-type layers than in p-type layers of the laser. The layers can be configured to produce a ridge diode laser having an internal loss less than about 3 cm?1, and able to generate an approximately 980 nm laser beam with a transverse divergence of about 28° or less, and a spot size of about 0.8 ?m or more.

Abstract: A VCSEL having a metallic heat spreading layer adjacent a semiconductor buffer layer containing an insulating structure. The heat spreading layer includes an opening that enables light emitted by an active region to reflect from a distributed Bragg reflector (DBR) top mirror located above the heat spreading layer. A substrate is below the active region. A lower contact provides electrical current to that substrate. The lower contact includes an opening that enables light emitted from the active region to reflect from a distributed Bragg reflector (DBR) lower mirror. Beneficially, the substrate includes a slot that enables light to pass through an opening in the lower contact. That slot acts as an alignment structure that enables optical alignment of an external feature to the VCSEL.

Abstract: A method and apparatus is provided for stabilizing output beam parameters of a gas discharge laser by maintaining a molecular fluorine component of the laser gas mixture at a predetermined partial pressure using a gas supply unit and a processor. The molecular fluorine is provided at an initial partial pressure and is subject to depletion within the laser discharge chamber. Injections of gas including molecular fluorine are performed each to increase the partial pressure of molecular fluorine by a selected amount in the laser chamber preferably less than 0.2 mbar per injection, or 7% of an amount of F2 already within the laser chamber. A number of successive injections may be performed at selected intervals to maintain the constituent gas substantially at the initial partial pressure for maintaining stable output beam parameters.