Abstract: A method and device for photothermal imaging tiny metal particles which are immersed in a given medium like a living cell deposited onto a transparent glass slide. The given medium and immersed tiny metal particles are illuminated through separate phase reference laser beam and sensitive probe laser beam, with the sensitive probe laser beam including a heating laser beam undergoing through impingement on the given medium slight phase changes induced by photothermal effect due to a local heating, in the absence of any substantial phase changes to the phase reference laser beam. Illuminating is performed by focusing the separate phase reference and sensitive probe laser beam through the transparent glass slide at a given depth within the given medium and a transmitted phase reference laser beam and a transmitted sensitive probe laser beam undergoing the slight phase changes are generated.

Abstract: This invention is a fiber-based multi-color pyrometry set-up for real-time non-contact temperature and emissivity measurement. The system includes a single optical fiber to collect radiation emitted by a target, a reflective rotating chopper to split the collected radiation into two or more paths while modulating the radiation for lock-in amplification (i.e., phase-sensitive detection), at least two detectors possibly of different spectral bandwidths with or without filters to limit the wavelength regions detected and optics to direct and focus the radiation onto the sensitive areas of the detectors. A computer algorithm is used to calculate the true temperature and emissivity of a target based on blackbody calibrations. The system components are enclosed in a light-tight housing, with provision for the fiber to extend outside to collect the radiation.

Abstract: A thermal process apparatus for a semiconductor substrate, including a heating source heating the semiconductor substrate by irradiating a light on one side of the semiconductor substrate, a reflection plate facing to the semiconductor substrate in a state where a reflection cavity is formed with another side of the semiconductor substrate, a thermometer having a light-receiving part provided on the refection plate so as to measure a temperature of the semiconductor substrate by catching a radiation beam from the semiconductor substrate heated by the heating source by the light-receiving part; and light absorption means provided around the light-receiving part for absorbing a diffuse reflection light generated in the reflection cavity.

Abstract: A self-calibrating nulling radiometer for non-contact temperature measurement of an object, such as a body of water, employs a black body source as a temperature reference, an optomechanical mechanism, e.g., a chopper, to switch back and forth between measuring the temperature of the black body source and that of a test source, and an infrared detection technique. The radiometer functions by measuring radiance of both the test and the reference black body sources; adjusting the temperature of the reference black body so that its radiance is equivalent to the test source; and, measuring the temperature of the reference black body at this point using a precision contact-type temperature sensor, to determine the radiative temperature of the test source.

Abstract: An electronic thermometer including a probe to be inserted in to a portion of an outer ear to be measured by the thermometer, an infrared quantity detection means for detecting an infrared radiation quantity which is entered through the probe, a temperature computation means for applying the detected infrared radiation quantity in a predetermined computation expression to compute out a temperature such as body temperature, an infrared transmission data reading means for taking data corresponding to an infrared transmission quantity passing through the probe, and a control means for controlling the computation expression according to the taken data corresponding to the infrared transmission quantity.

Abstract: To provide a radiation thermometer capable of measuring a body temperature more accurately than it has been conventionally possible, by taking into account an infrared ray that is emitted from a front end of the probe portion and reflected from an eardrum or an external acoustic opening. The radiation thermometer has body temperature calculating means for calculating a body temperature according to a predetermined arithmetic expression based on an emissivity when the emissivity of the eardrum or the external acoustic opening is less than 1, an output of infrared-ray detecting means and an output of temperature-measuring means.

Abstract: A method and apparatus for calibrating temperature measurements that are taken with a first radiation detector for measuring thermal radiation given off by a reference substrate are provided. The method includes the steps of heating the reference substrate, which carries at least one reference material having a known melting point temperature, to or over the melting point temperature and measuring the thermal radiation of the reference substrate during the heating step, during a cooling period that follows the heating, or during both the heating and the cooling periods. The method also includes the step of correlating a measurement plateau of the thermal radiation which occurs during the measuring step with the known melting point temperature.

Abstract: The present invention aims to exclude the influence of stray light dye to a heating lamp when measuring the temperature of an object to be treated, such as a wafer, with the use of a radiation thermometer. The present invention utilizes the relationship between a power W supplied from an output control section 28 to lamps 22 and optical energy radiated from the lamps 22. Influence which the light radiated from the lamps 22 exerts on the output voltage of a photodiode 18 is experimentally found beforehand as a function of the power W, and stored in a computing section 26. The computing section 26 subtracts the influence of stray light from the lamps 22, which is included in the output voltage of the photodiode 18, from the output value of the photodiode 18 on the basis of the value of the power W transmitted from the output control section 28, and calculates the temperature of a susceptor 8.

Abstract: A system and method for determining lateral thermal diffusivity of a material sample using a heat pulse; a sample oriented within an orthogonal coordinate system; an infrared camera; and a computer that has a digital frame grabber, and data acquisition and processing software. The mathematical model used within the data processing software is capable of determining the lateral thermal diffusivity of a sample of finite boundaries. The system and method may also be used as a nondestructive method for detecting and locating cracks within the material sample.

Abstract: The present invention intends to improve the accuracy of temperature measurement when measuring the temperature of a semiconductor wafer by a radiation thermometer on the basis of the idea of virtual blackbody simulated by multiple reflection of light. A system includes a wafer (W), a circular reflector 1 of a radius R disposed opposite to the wafer (W), and a probe (2) disposed in a through hole formed in the reflector (1). The probe (2) is a through hole. The radiation intensity of radiation passed the through hole is determined by image data provided by a CCD camera disposed behind the back surface of the reflector (1). An error in measured radiation intensity of radiation falling the probe (2) due to light that enters a space between the wafer (W) and the reflector (1) and a space between the reflector (1) and the probe (2) and light leaks from the same spaces is corrected, the emissivity of the wafer (W) is calculated and the temperature of the wafer (W) is determined.

Abstract: A radiant light from a reaction chamber is measured outside the chamber, and a relation between a change of a radiation ratio of the radiant light, and a change of a thickness of a thin film is acquired, when a CVD apparatus is used to form the film on a substrate in the chamber. After acquiring the relation between the change of the radiation ratio and the change of the film thickness, the change of the radiation ratio is measured, when the CVD apparatus is used to form the film. The thickness of the film is estimated from the change of the radiation ratio measured in measuring the change of the radiation ratio from the relation between the change of the radiation ratio and the change of the film thickness acquired in acquiring the relation between the change of the radiation ratio and the change of the film thickness.

Abstract: A blackbody cavity having two types of wall surfaces wherein a first type has high emissivity and a second type has low emissivity. The low emissivity wall surface has an aperture from where the infrared radiation escapes the cavity, and is preferably shaped to minimize the escape through the aperture of radiation emanated directly from the low emissivity wall itself. The combination of high and low emissivity wall surfaces allows the blackbody to reduce the influence of the environmental temperature while maintaining emissivity approaching unity.

Abstract: The apparatus allows monitoring layer depositions in a process chamber. The apparatus has a light source, a sensor element, and at least one light detector. The sensor element is suitably configured in order to influence the intensity of the light beam measured by the detector by the thickness of the layer growing on the sensor element. The novel monitoring method for measuring the transmitted light intensity utilizes the apparatus. The sensor element has a continuous opening through which the intensity of the light is observed as a function of the opening grown over by the thickness of the growing layer.

Abstract: A radiation detector for axillary temperature measurement comprises a wand having an axially directed radiation sensor at one end and an offset handle at the opposite end. The radiation sensor is mounted within a heat sink and retained by an elastomer in compression. The radiation sensor views a target surface through an emissivity compensating cup and a plastic film. A variable reference is applied to a radiation sensor and amplifier circuit in order to maintain full analog-to-digital converter resolution over design ranges of target and sensor temperature with the sensor temperature either above or below target temperature.

Abstract: A method for determining the temperature of a surface upon which a coating is grown using optical pyrometry by correcting Kirchhoff's law for errors in the emissivity or reflectance measurements associated with the growth of the coating and subsequent changes in the surface thermal emission and heat transfer characteristics. By a calibration process that can be carried out in situ in the chamber where the coating process occurs, an error calibration parameter can be determined that allows more precise determination of the temperature of the surface using optical pyrometry systems. The calibration process needs only to be carried out when the physical characteristics of the coating chamber change.

Abstract: The present invention relates to a device useful for the measurement of the temperature of a radiating body. More particularly, the present invention relates to a radiation pyrometer that detects and compensates for emissivity that changes with wavelength, as in metals. Additionally the present invention relates to a device that enhances the resolution and repeatability of the measured temperature of the radiating body. Additionally, the present invention relates to the technique utilized to enhance the resolution and repeatability of the measured temperature.

Abstract: Apparatus for measuring the temperature of an electrically heated pot which uses the Planck formula and employs an infrared reflective hemisphere; first and second infrared wave guides, and first and second infrared filters and infrared detectors as well as a calculating device.

Abstract: A thermal process apparatus for a semiconductor substrate, including a heating source heating the semiconductor substrate by irradiating a light on one side of the semiconductor substrate, a reflection plate facing to the semiconductor substrate in a state where a reflection cavity is formed with another side of the semiconductor substrate, a thermometer having a light-receiving part provided on the refection plate so as to measure a temperature of the semiconductor substrate by catching a radiation beam from the semiconductor substrate heated by the heating source by the light-receiving part; and light absorption means provided around the light-receiving part for absorbing a diffuse reflection light generated in the reflection cavity.

Abstract: A method is provide for measuring electromagnetic radiation radiated from a surface of an object that is irradiated by electromagnetic radiation given off by at least one radiation source. The radiation given off by the radiation source is determined by at least one first detector, and the radiation given off by the irradiated object is determined by at least one second detector that measures the radiation. The radiation from the at least one radiation source is actively modulated with at least one characteristic pyrometer. The radiation determined by the second detector is corrected with the radiation determined by the first detector to compensate for the radiation of the radiation source reflected from the object.

Abstract: Apparatus and method for determining a real time, non-contact temperature measurement of semiconductor wafers is provided in a computer-based data gathering system. The apparatus includes a moving carrier containing semiconductor wafers and a pyrometer and a reflectometer positioned above the spinning wafer carrier for providing temperature and reflectivity data samples taken from the semiconductor wafers and spinning carrier. The data are then provided to an attached computer. The attached computer receives the reflectivity and temperature data pairs, stores them in a data table and records the frequency of occurrence of each of the reflectivity values in the series of reflectivity and temperature data.

Abstract: The thermal isolation apparatus for the protruding probe of a biomedical thermometer includes an insulative air gap and a heat sink disposed between the surface of the probe and the optical path through the probe. The heat sink surrounds the optical path, such as a waveguide, and acts to evenly distribute any heat along the entire length of the waveguide to avoid temperature variations. Additionally, the heat sink has sufficient mass for high heat capacity and may slow the progress of any heat from reaching or leaving the waveguide until after the measurement by the biomedical instrument has been completed. Disposed over the heat sink is a boot which forms the closed air space between the heat sink and the outer probe surface. The air gap combined with the heat sink provide relative thermal isolation of the optical path through the probe and provide relative thermal isolation of the target anatomy from the temperature of the probe.

Abstract: A method and apparatus for active pyrometric measurement of the temperature of a body whose emissivity varies with wavelength. The emissivity is inferred from reflectivity measured at two wavelengths in an irradiation wavelength band and extrapolated to a wavelength in an emission wavelength band. The extrapolated emissivity is used to correct a blackbody estimate of the temperature of the body in the emission wavelength band. The extrapolation, being temperature-dependent, is done iteratively. Both reflectivity and emission measurements are performed via a common optical head that is shaped, and is positioned relative to the body, so that the optical head has a sufficiently large solid angle of acceptance that the measured temperature is independent of superficial roughness of the body.

Abstract: A method and system for calibrating radiation sensing devices, such as pyrometers, in thermal processing chambers are disclosed. The system includes a reflective device positioned opposite the radiation sensing devices and a calibrating light source which emits light energy onto the reflective device. The system is designed so that each radiation sensing device is exposed to the same intensity of light being reflected off the reflective device, which has a preset value. The radiation sensing devices are then used to measure the amount of light energy being reflected which is then compared to the preset value for making any necessary adjustments.

Abstract: Body temperature measurements are obtained by scanning a thermal radiation sensor across the side of the forehead over the temporal artery. A peak temperature measurement is processed to compute an internal temperature of the body as a function of ambient temperature and the sensed surface temperature. The function includes a weighted difference of surface temperature and ambient temperature, the weighting being varied with target temperature through a minimum in the range of 96° F. and 100° F. The radiation sensor views the target surface through an emissivity compensating cup which is spaced from the skin by a circular lip of low thermal conductivity.

Abstract: A temperature measuring method measures the temperature of a measuring object, such as a semiconductor wafer, by a radiation thermometer capable of approximating the relation between its output and the temperature of the measuring object by a predetermined straight line and of being calibrated by properly determining a slope and a y-intercept for the straight line. The measuring method carries out a procedure including the steps of measuring the reflectivity of a measuring object regarding the light of a wavelength that is not transmitted by the measuring object, and determining a slope and a y-intercept for a proper straight line for the measuring object on the basis of results of processing the measuring object by a predetermined process, such as a film forming process, that provides a result, such as the thickness of a film, corresponding to process temperature.

Abstract: To provide a method and equipment for measuring a radiation temperature both capable of measuring temperatures of a substrate more accurately and stably than ever and equipment for manufacturing semiconductors therein such a radiation temperature measuring method can be applied. A reflectometer 21 irradiates, on a wafer W having Si and SiO2 layers, light of a wavelength that transmits the Si layer and is reflected from the SiO2 layer (an interface between Si and SiO2) to measure reflectance. With the reflectance and radiation energy at the wavelength of the wafer W measured by a radiation thermometer, a temperature of the wafer W is calculated. Thereby, even when a thin film is formed on a rear face of the substrate to blot and to result in a change of a state thereof, by the use of a stable interface in the substrate, temperatures can be measured with precision and stability.

Abstract: A radiation detector for axillary temperature measurement comprises a wand having an axially directed radiation sensor at one end and an offset handle at the opposite end. The radiation sensor is mounted within a heat sink and retained by an elastomer in compression. The radiation sensor views a target surface through an emissivity compensating cup and a plastic film. A variable reference is applied to a radiation sensor and amplifier circuit in order to maintain full analog-to-digital converter resolution over design ranges of target and sensor temperature with the sensor temperature either above or below target temperature.

Abstract: A method and device for detecting an incorrect position of a semiconductor wafer during a high-temperature treatment of the semiconductor water in a quartz chamber which is heated by IR radiators, has the semiconductor wafer lying on a rotating support and being held at a specific temperature with the aid of a control system. Thermal radiation which is emitted by the semiconductor wafer and the IR radiators is recorded using a pyrometer. The radiation temperature of the recorded thermal radiation is determined. The semiconductor wafer is assumed to be in an incorrect position if the temperature of the recorded thermal radiation fluctuates to such an extent over the course of time that the fluctuation width lies outside a fluctuation range &Dgr;T which is regarded as permissible.

Abstract: A radiation thermometer is rationally adjusted during manufacturing processes instead of requiring a user to manually adjust the radiation thermometer each time a temperature is measured, and hence, the radiation thermometer better improves temperature measurement accuracy.

Abstract: System and method for determining thermal characteristics, such as temperature, temperature uniformity and emissivity, during thermal processing using shielded pyrometry. The surface of a semiconductor substrate is shielded to prevent interference from extrinsic light from radiant heating sources and to form an effective black-body cavity. An optical sensor is positioned to sense emitted light in the cavity for pyrometry. The effective emissivity of the cavity approaches unity independent of the semiconductor substrate material which simplifies temperature calculation. The shield may be used to prevent undesired backside deposition. Multiple sensors may be used to detect temperature differences across the substrate and in response heaters may be adjusted to enhance temperature uniformity.

Abstract: A method is provide for measuring electromagnetic radiation radiated from a surface of an object that is irradiated by electromagnetic radiation given off by at least one radiation source. The radiation given off by the radiation source is determined by at least one first detector, and the radiation given off by the irradiated object is determined by at least one second detector that measures the radiation. The radiation from the at least one radiation source is actively modulated with at least one characteristic parameter. The radiation determined by the second detector is corrected with the radiation determined by the first detector to compensate for the radiation of the radiation source reflected from the object.

Abstract: A system and method for determining the reflectivity of a workpiece during processing in a heating chamber of a thermal processing apparatus. The system first determines directly the reflectivity of the workpiece outside of the heating chamber of the thermal processing apparatus, and then determines the reflectivity of the workpiece during processing within the heating chamber of the thermal processing apparatus by correlating the ex situ wafer reflectivity with the intensity of the radiation reflected from the wafer within the heating chamber.

Abstract: A method of correcting a temperature probe reading in a thermal processing chamber for heating a substrate, including the steps of heating the substrate to a process temperature and using a first, a second and a third probe to measure the temperature of the substrate. The first probe has a first effective reflectivity and the second probe has a second effective reflectivity. The first probe produces a first temperature indication, the second probe produces a second temperature indication and the third probe produces a third temperature indication. The first and second effective reflectivities may be different. From the first and second temperature indications, a corrected temperature reading for the first probe may be derived, wherein the corrected temperature reading is a more accurate indicator of an actual temperature of the substrate than an uncorrected readings produced by both the first and second probes.

Abstract: A radiation clinical thermometer that measures body temperature within a short period of time. The radiation clinical thermometer includes an infrared sensor for outputting an infrared detection signal upon reception of thermal radiations from an object to be measured, optical wave-guide structure for guiding the thermal radiations from the object to be measured to the infrared sensor, a temperature sensor for measuring a reference temperature and outputting a reference temperature signal, temperature difference structure for detecting a temperature difference between the infrared sensor and the optical wave-guide structure and outputting a temperature difference signal, and temperature calculation structure for receiving the infrared detection signal, the reference temperature signal, and the temperature difference signal in calculating a temperature data signal by correcting an error based on the temperature difference.

Abstract: The present invention provides a method of forming titanium silicide by subjecting a silicon substrate having titanium formed thereon to a thermal process, such as rapid thermal process. The silicon substrate and the titanium are being heated to at least a selected annealing temperature, which is the minimum temperature on and after which the titanium silicide displays generally constant sheet resistivity and resistance non-uniformity. The selected annealing temperature is determined by heating the silicon substrate and the titanium from an initial temperature to a final temperature to create titanium silicide and measuring the sheet resistance and/or resistance non-uniformity at selected temperature intervals between the initial temperature and the final temperature. The temperature on and after which the sheet resistance and resistance non-uniformity is generally constant is the selected annealing temperature.

Abstract: A temperature sensor system for a household appliance, such as a microwave oven, that provides for a non-contact self-calibrating measurement of the temperature of an object disposed in a chamber of the appliance. The system comprises an infrared transmitter and an infrared receiver, as well as a distribution apparatus for coupling the transmitter and receiver to the appliance chamber. A scan pattern of infrared radiation is provided for the chamber and the detected infrared radiation from the chamber is used by a processor to generate an accurate measure of the temperature of the object in the chamber.

Abstract: A plasma resistant lightpipe is used in a pyrometric temperature measurement system to measure the temperature of a substrate in a reaction chamber. The plasma resistant lightpipe includes two lightpipe elements. The first lightpipe element, which may be a sapphire rod or aluminum nitride rod, is positioned within a backside gas delivery path to the chamber. The first lightpipe element is resistant to etching caused by reactive plasmas or gases used within the chamber, such as fluorine. The second lightpipe, which is a quartz rod, is positioned beneath the first lightpipe element such that the two lightpipe elements are optically coupled. The first lightpipe element may be directly mounted in the base plate or electrostatic chuck of the pedestal assembly or directly mounted in a plug, which is then positioned within the base plate or electrostatic chuck.

Abstract: There is provided a heat-treating method and a radiant heating device by which an object to be heat-treated can be heat-treated at an actually desired temperature regardless of the dopant concentration or resistivity of the object at the time of heat-treating the object with a radiant heating device using a radiation thermometer as a temperature detector. In the method, the object is heat-treated at an actually desired temperature by correcting the temperature of the object in accordance with the dopant concentration or resistivity of the object. In the apparatus, the dopant concentration or resistivity of the object is inputted in advance to a temperature controller and the controller calculates an actual temperature of the object by correcting and computing the temperature of the object detected with the radiation thermometer in accordance with the dopant concentration or resistivity of the object and controls the temperature of the object based on the calculated temperature value.

Abstract: A method and apparatus for measuring the temperature of an object, such as a substrate, during processing. The object is illuminated by a light source. Infrared light that is transmitted through the object is then collected and transmitted to a photodiode. The amount of light transmitted through the substrate varies as a function of substrate temperature. The photodiode generates a signal in response to the light transmitted to the photodiode and an analyzing device generates a real-time temperature reading based on the signal. The photodiode may include at least one silicon photodiode or a plurality of photodiodes made from germanium or indium/gallium/arsenide.

Abstract: The present invention is generally directed to a system and process for accurately determining the temperature of an object, such as a semiconductive wafer, by sensing and measuring the object radiation being emitted at a particular wavelength. In particular, a reflective device is placed adjacent to the radiating object, which causes thermal radiation being emitted by the wafer to be reflected multiple times. The reflected thermal radiation is then monitored using a light detector. Additionally, a reflectometer is contained within the system which independently measures the reflectivity of the object. The temperature of the object is then calculated using not only the thermal radiation information but also the information received from the reflectometer.

Abstract: The present invention is generally directed to a system and process for accurately determining the temperature of an object, such as a semi-conductive wafer, by sampling from the object radiation being emitted at a particular wavelength. In one embodiment, a single reflective device is placed adjacent to the radiating object. The reflective device includes areas of high reflectivity and areas of low reflectivity. The radiation being emitted by the object is sampled within both locations generating two different sets of radiation measurements. The measurements are then analyzed and a correction factor is computed based on the optical characteristics of the reflective device and the optical characteristics of the wafer. The correction factor is then used to more accurately determine the temperature of the wafer. In an alternative embodiment, if the radiating body is semi-transparent, a reflective device is placed on each side of the object, which compensates for the transparency of the object.

Abstract: This invention is a fiber-based multi-color pyrometry set-up for real-time non-contact temperature and emissivity measurement. The system includes a single optical fiber to collect radiation emitted by a target, a reflective rotating chopper to split the collected radiation into two or more paths while modulating the radiation for lock-in amplification (i.e., phase-sensitive detection), at least two detectors possibly of different spectral bandwidths with or without filters to limit the wavelength regions detected and optics to direct and focus the radiation onto the sensitive areas of the detectors. A computer algorithm is used to calculate the true temperature and emissivity of a target based on blackbody calibrations. The system components are enclosed in a light-tight housing, with provision for the fiber to extend outside to collect the radiation.

Abstract: The present invention is generally directed to a system and process for accurately determining the temperature of an object, such as a semi-conductive wafer, by sampling from the object radiation being emitted at a particular wavelength. In one embodiment, a single reflective device is placed adjacent to the radiating object. The reflective device includes areas of high reflectivity and areas of low reflectivity. The radiation being emitted by the object is sampled within both locations generating two different sets of radiation measurements. The measurements are then analyzed and a correction factor is computed based on the optical characteristics of the reflective device and the optical characteristics of the wafer. The correction factor is then used to more accurately determine the temperature of the wafer. In an alternative embodiment, if the radiating body is semi-transparent, a reflective device is placed on each side of the object, which compensates for the transparency of the object.

Abstract: A system and method of measurement of emissivity and radiance of a wafer in a rapid thermal processing chamber enables determination of wafer temperature and control of temperature of the wafer. Mirrors enclose the chamber and reflect radiation from lamps within the chamber to heat the workpiece of interest. One or more viewing ports are provided in one of the mirrors to allow for the egress of radiant energy emitted by the wafer. The wavelength of the exiting radiation is selected by an optical filter having a passband which passes radiation at wavelengths emitted by the wafer while excluding radiation emitted by heating lamps. A chopper having surface regions differing in their reflectivity and transmissivity is positioned along an optical path of radiation propagating through the one or more ports, this resulting in a pulsation of detected radiation.

Abstract: An apparatus for measuring the temperature of an object within a process chamber is described. The process chamber includes a platform for receiving the object and an energy source for transferring energy to the object. The apparatus includes a shield, and a first and second energy sensor. The shield is positioned in the chamber adjacent the object to create an isothermal cavity in the space between the object and the shield. The shield is designed to receive from the energy source an amount of energy approximating that received by the object. The first energy sensor is positioned between the shield and the platform to measure the temperature of the object. The second energy sensor measures the temperature of the shield.A method for establishing an isothermal condition within the process chamber includes the steps of varying the shield temperature in inverse relationship to the difference between the shield temperature and a target temperature.

Abstract: The present invention is directed to an apparatus and process for filtering light in a thermal processing chamber. In particular, the apparatus of the present invention includes a first spectral filter spaced apart from a second spectral filter. The first spectral filter is spaced apart from the second spectral filter so as to define a cooling fluid channel therebetween through which a cooling fluid can be circulated. In order to prevent thermal radiation being emitted by the light source from interfering with the operation of a radiation sensing device contained in the chamber, the first spectral filter absorbs most of the thermal radiation being emitted by the light source at the operating wavelength of the radiation sensing device. The second spectral filter, on the other hand, is substantially transparent to thermal radiation at the operating wavelength of the radiation sensing device.

Abstract: The invention relates to a method and temperature sensor structure for compensating radiation error particularly in a radiosonde, rocket sonde or dropsonde. According to the method, each sonde carries at least one temperature sensor. According to the invention, the temperature measurement is carried out by means of two temperature sensors, both having low emissivities but different absorption coefficients for solar radiation.

Abstract: Apparatus for measuring the temperature of workpieces, particularly semiconductor wafers, during their processing, including a head assembly having a head plate circumscribed by a raised rim for receiving the workpiece and for spacing it from the head plate to define an enclosed volume between the head plate, rim, and workpiece; a thermally-conductive member, e.g., an optical fiber, passing through the head assembly and having one end exposed to the enclosed volume such that it receives thermal radiation therefrom; and a thermal detector aligned with the opposite end of the thermally-conductive member for detecting the thermal radiation received by it from the enclosed volume and for converting same to an electrical signal representing a measurement of the temperature of the enclosed volume.

Abstract: The surface of the member to be inspected is covered with powder deposited by using, for example, static electricity prior to the flaw detection. The member surface is covered so as to be partly exposed by setting the average thickness of the powder layer to 0.1D-0.6D, where D is the average particle diameter of the powder, under an assumption that the powder particles in the powder layer are virtually leveled into a uniform thickness film. Subsequently, the surface region of the member is heated by high frequency induction heating, and then the temperature distribution on the surface is measured with a radiation thermometer. The part for which the temperature measured is different from the surroundings is judged as a flaw. The surface of the member is covered with the powder so that the surface emissivity becomes almost uniform, and the resulting temperature distribution measured with the radiation thermometer becomes almost equal to the real one.

Abstract: A position detection system is provided which, without physical contact, by the use of detected infrared energy emissions determines whether there is correct placement of one or more small objects, e.g., lead frames, on the lower half of a two-part die mold in a semiconductor component manufacturing process. This takes place prior to injection of an initially molten material that solidifies and encapsulates the small objects upon curing and cooling.