Abstract: To provide a method and equipment for measuring a radiation temperature both capable of measuring temperatures of a substrate more accurately and stably than ever and equipment for manufacturing semiconductors therein such a radiation temperature measuring method can be applied. A reflectometer 21 irradiates, on a wafer W having Si and SiO2 layers, light of a wavelength that transmits the Si layer and is reflected from the SiO2 layer (an interface between Si and SiO2) to measure reflectance. With the reflectance and radiation energy at the wavelength of the wafer W measured by a radiation thermometer, a temperature of the wafer W is calculated. Thereby, even when a thin film is formed on a rear face of the substrate to blot and to result in a change of a state thereof, by the use of a stable interface in the substrate, temperatures can be measured with precision and stability.

Abstract: A method for measuring the temperature of a scene using a detector having at least one reference pixel, with an integratable sampling circuit associated with each pixel. Initially, an ambient reference temperature is observed with the reference pixel(s) to provide a parameter, generally voltage, indicative of that temperature to provide a constant voltage output indicating that temperature by varying the sampling circuit integration time. Each non-reference pixel is exposed to different scene and ambient temperatures and the integration time for each set of data for each pixel is recorded. For each pixel, an equation is provided relating integration time to pixel voltage when the ambient temperature and the scene temperature are the same to correct for offsets and an equation is provided relating integration time and offset corrected pixel value to the difference between the ambient temperature and the scene temperature when the ambient temperature and scene temperature differ for correction of responsivity.

Abstract: A solid state optical spectrometer for combustion flame temperature determination comprises: a first photodiode device for obtaining a first photodiode signal, the first photodiode device comprising a silicon carbide photodiode and having a range of optical responsivity within an OH band; a second photodiode device for obtaining a second photodiode signal, the second photodiode device comprising a silicon carbide photodiode and a filter, the second photodiode device having a range of optical responsivity in a different and overlapping portion of the OH band than the first photodiode device; and a computer for obtaining a ratio using the first and second photodiode signals and using the ratio to determine the combustion flame temperature.

Abstract: A method and device for detecting an incorrect position of a semiconductor wafer during a high-temperature treatment of the semiconductor water in a quartz chamber which is heated by IR radiators, has the semiconductor wafer lying on a rotating support and being held at a specific temperature with the aid of a control system. Thermal radiation which is emitted by the semiconductor wafer and the IR radiators is recorded using a pyrometer. The radiation temperature of the recorded thermal radiation is determined. The semiconductor wafer is assumed to be in an incorrect position if the temperature of the recorded thermal radiation fluctuates to such an extent over the course of time that the fluctuation width lies outside a fluctuation range &Dgr;T which is regarded as permissible.

Abstract: A system and method for determining the reflectivity of a workpiece during processing in a heating chamber of a thermal processing apparatus. The system first determines directly the reflectivity of the workpiece outside of the heating chamber of the thermal processing apparatus, and then determines the reflectivity of the workpiece during processing within the heating chamber of the thermal processing apparatus by correlating the ex situ wafer reflectivity with the intensity of the radiation reflected from the wafer within the heating chamber.

Abstract: A method of correcting a temperature probe reading in a thermal processing chamber for heating a substrate, including the steps of heating the substrate to a process temperature and using a first, a second and a third probe to measure the temperature of the substrate. The first probe has a first effective reflectivity and the second probe has a second effective reflectivity. The first probe produces a first temperature indication, the second probe produces a second temperature indication and the third probe produces a third temperature indication. The first and second effective reflectivities may be different. From the first and second temperature indications, a corrected temperature reading for the first probe may be derived, wherein the corrected temperature reading is a more accurate indicator of an actual temperature of the substrate than an uncorrected readings produced by both the first and second probes.

Abstract: A radiation clinical thermometer that measures body temperature within a short period of time. The radiation clinical thermometer includes an infrared sensor for outputting an infrared detection signal upon reception of thermal radiations from an object to be measured, optical wave-guide structure for guiding the thermal radiations from the object to be measured to the infrared sensor, a temperature sensor for measuring a reference temperature and outputting a reference temperature signal, temperature difference structure for detecting a temperature difference between the infrared sensor and the optical wave-guide structure and outputting a temperature difference signal, and temperature calculation structure for receiving the infrared detection signal, the reference temperature signal, and the temperature difference signal in calculating a temperature data signal by correcting an error based on the temperature difference.

Abstract: A temperature sensor system for a household appliance, such as a microwave oven, that provides for a non-contact self-calibrating measurement of the temperature of an object disposed in a chamber of the appliance. The system comprises an infrared transmitter and an infrared receiver, as well as a distribution apparatus for coupling the transmitter and receiver to the appliance chamber. A scan pattern of infrared radiation is provided for the chamber and the detected infrared radiation from the chamber is used by a processor to generate an accurate measure of the temperature of the object in the chamber.

Abstract: The present invention provides a method of forming titanium silicide by subjecting a silicon substrate having titanium formed thereon to a thermal process, such as rapid thermal process. The silicon substrate and the titanium are being heated to at least a selected annealing temperature, which is the minimum temperature on and after which the titanium silicide displays generally constant sheet resistivity and resistance non-uniformity. The selected annealing temperature is determined by heating the silicon substrate and the titanium from an initial temperature to a final temperature to create titanium silicide and measuring the sheet resistance and/or resistance non-uniformity at selected temperature intervals between the initial temperature and the final temperature. The temperature on and after which the sheet resistance and resistance non-uniformity is generally constant is the selected annealing temperature.

Abstract: A plasma resistant lightpipe is used in a pyrometric temperature measurement system to measure the temperature of a substrate in a reaction chamber. The plasma resistant lightpipe includes two lightpipe elements. The first lightpipe element, which may be a sapphire rod or aluminum nitride rod, is positioned within a backside gas delivery path to the chamber. The first lightpipe element is resistant to etching caused by reactive plasmas or gases used within the chamber, such as fluorine. The second lightpipe, which is a quartz rod, is positioned beneath the first lightpipe element such that the two lightpipe elements are optically coupled. The first lightpipe element may be directly mounted in the base plate or electrostatic chuck of the pedestal assembly or directly mounted in a plug, which is then positioned within the base plate or electrostatic chuck.

Abstract: There is provided a heat-treating method and a radiant heating device by which an object to be heat-treated can be heat-treated at an actually desired temperature regardless of the dopant concentration or resistivity of the object at the time of heat-treating the object with a radiant heating device using a radiation thermometer as a temperature detector. In the method, the object is heat-treated at an actually desired temperature by correcting the temperature of the object in accordance with the dopant concentration or resistivity of the object. In the apparatus, the dopant concentration or resistivity of the object is inputted in advance to a temperature controller and the controller calculates an actual temperature of the object by correcting and computing the temperature of the object detected with the radiation thermometer in accordance with the dopant concentration or resistivity of the object and controls the temperature of the object based on the calculated temperature value.

Abstract: A method and apparatus for measuring the temperature of an object, such as a substrate, during processing. The object is illuminated by a light source. Infrared light that is transmitted through the object is then collected and transmitted to a photodiode. The amount of light transmitted through the substrate varies as a function of substrate temperature. The photodiode generates a signal in response to the light transmitted to the photodiode and an analyzing device generates a real-time temperature reading based on the signal. The photodiode may include at least one silicon photodiode or a plurality of photodiodes made from germanium or indium/gallium/arsenide.

Abstract: The present invention is generally directed to a system and process for accurately determining the temperature of an object, such as a semiconductive wafer, by sensing and measuring the object radiation being emitted at a particular wavelength. In particular, a reflective device is placed adjacent to the radiating object, which causes thermal radiation being emitted by the wafer to be reflected multiple times. The reflected thermal radiation is then monitored using a light detector. Additionally, a reflectometer is contained within the system which independently measures the reflectivity of the object. The temperature of the object is then calculated using not only the thermal radiation information but also the information received from the reflectometer.

Abstract: This invention is a fiber-based multi-color pyrometry set-up for real-time non-contact temperature and emissivity measurement. The system includes a single optical fiber to collect radiation emitted by a target, a reflective rotating chopper to split the collected radiation into two or more paths while modulating the radiation for lock-in amplification (i.e., phase-sensitive detection), at least two detectors possibly of different spectral bandwidths with or without filters to limit the wavelength regions detected and optics to direct and focus the radiation onto the sensitive areas of the detectors. A computer algorithm is used to calculate the true temperature and emissivity of a target based on blackbody calibrations. The system components are enclosed in a light-tight housing, with provision for the fiber to extend outside to collect the radiation.

Abstract: A system and method of measurement of emissivity and radiance of a wafer in a rapid thermal processing chamber enables determination of wafer temperature and control of temperature of the wafer. Mirrors enclose the chamber and reflect radiation from lamps within the chamber to heat the workpiece of interest. One or more viewing ports are provided in one of the mirrors to allow for the egress of radiant energy emitted by the wafer. The wavelength of the exiting radiation is selected by an optical filter having a passband which passes radiation at wavelengths emitted by the wafer while excluding radiation emitted by heating lamps. A chopper having surface regions differing in their reflectivity and transmissivity is positioned along an optical path of radiation propagating through the one or more ports, this resulting in a pulsation of detected radiation.

Abstract: An apparatus for measuring the temperature of an object within a process chamber is described. The process chamber includes a platform for receiving the object and an energy source for transferring energy to the object. The apparatus includes a shield, and a first and second energy sensor. The shield is positioned in the chamber adjacent the object to create an isothermal cavity in the space between the object and the shield. The shield is designed to receive from the energy source an amount of energy approximating that received by the object. The first energy sensor is positioned between the shield and the platform to measure the temperature of the object. The second energy sensor measures the temperature of the shield.A method for establishing an isothermal condition within the process chamber includes the steps of varying the shield temperature in inverse relationship to the difference between the shield temperature and a target temperature.

Abstract: Method and apparatus for non-contact temperature, emissivity and area estimation for gray and non-gray (uniform and non-uniform surface emissivity) are disclosed. Optical power measurements are obtained for radiation from a surface of interest in multiple wavelength bands. These power measurements are used to generate an expression for surface emissivity as a function of unknown temperature and surface projected area. At each of series of trial temperatures and areas within a predetermined range of physically plausible values, a value for emissivity at each measured wavelength is obtained. A best fit between these emissivity data points and a selected model emissivity function is obtained by least-squares minimization. The trial temperature and area which yield both the smallest minimum sum of squares and an emissivity value within predetermined physical constraints are concluded to be the temperature and projected surface area.

Abstract: A thermometer is provided with a ROM, in which a program for controlling a CPU and plural predetermined emissivity data are memorized, and is further provided with a RAM having plural registers, in which plural emissivity data are entered and memorized. One of these memorized emissivity data is selected and used for measuring a temperature of an object. The selected emissivity data and an output of a temperature sensor are amplified by an amplifier, and are supplied to an A/D convertor to obtain digital data. The CPU processes the digital data to obtain temperature data, and displays the obtained temperature data. With this structure of the thermometer, emissivity data can be set with a simple operation.

Abstract: An emissivity compensating non-contact system for measuring the temperature of a semiconductor wafer. The system includes a semiconductor wafer emissivity compensation station for measuring the reflectivity of the wafer at discrete wavelengths to yield wafer emissivity in specific wavelength bands. The system further includes a measurement probe which is optically coupled to a semiconductor process chamber. The probe senses wafer self emission using one or more optical detectors and a light modulator. A background temperature determining mechanism independently senses the temperature of a source of background radiation. Finally, a mechanism calculates the temperature of the semiconductor wafer based on the reflectivity, self-emission and background temperature.

Abstract: An apparatus and method for monitoring a temperature around a point of clinical interest. The apparatus has a sensing surface carrying a plurality of temperature detectors in a regular spatial outer disposition around a central detector. A signal processor computes the highest temperature difference between any two outer detectors and the central detector and compares the highest difference with a predetermined number of temperature domains or ranges. The signal processor activates an output device to provide an indication of the correlation between the highest determined temperature difference and the temperature domains. The output device comprises three different colored lights to provide an indication of normal, doubtful or abnormal correlation. In another embodiment, the output device is a graphical display having a pattern of the organ to be examined as a background and a luminous point on the display, which is either not lit, flashes with a low frequency, or is continuously lit.

Abstract: Pyrometer with a probe beam superimposed on its field-of-view for furnace temperature measurements. The pyrometer includes a heterodyne millimeter/sub-millimeter-wave or microwave receiver including a millimeter/sub-millimeter-wave or microwave source for probing. The receiver is adapted to receive radiation from a surface whose temperature is to be measured. The radiation includes a surface emission portion and a surface reflection portion which includes the probe beam energy reflected from the surface. The surface emission portion is related to the surface temperature and the surface reflection portion is related to the emissivity of the surface. The simultaneous measurement of surface emissivity serves as a real time calibration of the temperature measurement. In an alternative embodiment, a translatable base plate and a visible laser beam allow slow mapping out of interference patterns and obtaining peak values therefor.

Abstract: Thermal, optical, physical and chemical characteristics of a substrate (11) surface are determined with non-contact optical techniques that include illuminating (23) the surface with radiation having a ripple intensity characteristic (51), and then measuring the combined intensities (53) of that radiation after modification by the substrate surface and radiation emitted from the surface. Precise determinations of emissivity, reflectivity, temperature, changing surface composition, the existence of any layer formed on the surface and its thickness are all possible from this measurement. They may be made in situ and substantially in real time, thus allowing the measurement to control (39, 41) various processes of treating a substrate surface. This has significant applicability to semiconductor wafer processing and metal processing.

Abstract: The output stability of an infrared thermocouple is improved by filtering the radiation received by the infrared thermocouple to pass only short wavelengths. The stability is further increased by providing a second infrared thermocouple having its input filtered to pass long wavelengths. The two outputs are combined to obtain an output signal which is substantially independent of emissivity. The linear range of an infrared detector through which its output closely follows that of a linear thermocouple is increased by a calibration method in which an initial offset is provided to a readout device. Calibration of the infrared detector is completed using an adjustable potentiometer. By providing removable apertures, the temperature range through which an infrared thermocouple may be used is extended. Elongated targets are efficiently viewed by an infrared thermocouple having an elongated thermopile flake and an imaging lens.

Abstract: A method of correcting a temperature probe reading in a thermal processing chamber for heating a substrate, including the steps of heating the substrate to a process temperature; using a first, a second and a third probe to measure the temperature of the substrate, the first and third probes having a first effective reflectivity and the second probe having a second effective reflectivity, the first probe producing a first temperature indication, the second probe producing a second temperature indication and the third probe producing a third temperature indication, and wherein the first and second effective reflectivities are different; and from the first and second temperature indications, deriving a corrected temperature reading for the first probe, wherein the corrected temperature reading is a more accurate indicator of an actual temperature of the substrate than an uncorrected readings produced by both the first and second probes.

Abstract: To provide a temperature measuring apparatus making it possible to automatically calculate a correction multiplier by assuming the data measured by a contact-type thermometer as a true value and always accurately measure temperature by the noncontact method in accordance with the correction multiplier. The temperature measuring apparatus comprises noncontact- and contact-type thermometers for measuring the temperature of a temperature measurement object, arithmetic means for calculating a correction multiplier for correcting an error of data measured by the noncontact-type thermometer in accordance with the data measured by the noncontact-type thermometer and a value measured by the contact-type thermometer and moreover calculating a correction value by correcting the data measured by the noncontact-type thermometer in accordance with the correction multiplier, and display means for displaying the measured value and the correction value.

Abstract: A system and method of measurement of emissivity and radiance of a wafer in a rapid thermal processing chamber enables determination of wafer temperature and control of temperature of the wafer. Mirrors enclose the chamber and reflect radiation from lamps within the chamber to heat the workpiece of interest. One or more viewing ports are provided in one of the mirrors to allow for the egress of radiant energy emitted by the wafer. The wavelength of the exiting radiation is selected by an optical filter having a passband which passes radiation at wavelengths emitted by the wafer while excluding radiation emitted by heating lamps. A chopper having surface regions differing in their reflectivity and transmissivity is positioned along an optical path of radiation propagating through the one or more ports, this resulting in a pulsation of detected radiation.

Abstract: An automatic gain control technique integrates samples of an incoming analog signal a controlled amount of time so that the magnitudes of the samples lie within the desired input window of an analog-to-digital converter or other signal processing device. The values of the samples are then determined from a combination of the output of the signal processing device and their integration time. This is utilized in a system for determining the temperature of a surface of an object, without contacting the surface, by measuring the level of its infra-red radiation emission. A particular application of the system is to measure the temperature of a semiconductor wafer within a processing chamber while forming integrated circuits on it. The measuring system is configured on a single printed circuit board with an extra height metal heat sink structure to which a cooling unit is mounted.

Abstract: A method of monitoring the temperature of a target (4), the method comprising:a) sensing radiation emitted by the target (4) at at least two different wavelengths;b) determining a temperature value from the sensed radiation in accordance with a first predetermined algorithm;c) repeating steps a) and b) a number of times to generate a set of temperature values;d) selecting a target temperature from the set of temperature values in accordance with a second predetermined algorithm; and,e) generating an output signal defining the target temperature obtained in step d).

Abstract: Self calibrating a pyrometer includes taking two different temperatures thereby generating two voltage spectra, calculating the spectra ratio R of the two voltage spectra, determining the slope of the plot of the logarithm of the spectrum ratio versus c.sub.2 /.lambda. to arrive at a relationship between T.sub.1 and T.sub.2, solving for T.sub.1 within the spectra ratio, and arriving at a value for T.sub.2 by substituting experimentally measured values for R into the spectra ratio equation. This method is then repeated for the determination of T.sub.2. The pyrometer calibration constant h.sub..lambda. can then be determined by dividing the measured voltage spectra by the planck function at the known temperature (i.e., T.sub.1 or T.sub.2). Measurement of subsequent temperatures can now be determined by measuring the voltage spectra and dividing by the calibration constant h.sub..lambda. which will result in a planck function L.sub..lambda. (T) which can be solved to yield the surface temperature.

Abstract: There is provided a method of measuring thermal diffusivity of solids and electronic lifetimes and defect properties of semiconductors useful for in-situ, non-destructive monitoring of engineered materials and electronic substrates. The method, termed photothermal rate window method, involves irradiating a sample with a repetitive square laser pulse of duration .tau..sub.p and period T.sub.0 and monitoring the temperature profile by measuring the photothermal signal emitted from the sample. The period T.sub.0 of the repetitive heating pulse is maintained constant and the pulse duration .tau..sub.p is varied in the range between 0 and T.sub.0 with the temperature measured at each value of .tau..sub.p. The method of measuring semiconductor recombination lifetimes involves irradiating a sample and scanning one of either the period T.sub.0 and the pulse duration .tau..sub.p of the repetitive laser pulse with the other held constant. The photothermal signal emitted from the surface is measured.

Abstract: A method of correcting a temperature probe reading in a thermal processing chamber for heating a substrate, including the steps of heating the substrate to a process temperature; using a first probe and a second probe to measure the temperature of the substrate, the first probe having a first effective reflectivity and the second chamber having a second effective reflectivity, the first probe producing a first temperature indication and the second probe producing a second temperature indication, and wherein the first and second effective reflectivities are different; and from the first and second temperature indications, deriving a corrected temperature reading for the first probe, wherein the corrected temperature reading is a more accurate indicator of an actual temperature of the substrate than are uncorrected readings produced by both the first and second probes.

Abstract: A real-time multi-zone semiconductor wafer temperature and process uniformity control system for use in association with a semiconductor wafer fabrication reactor comprises a multi-zone illuminator (130), a multi-point temperature sensor (132), and process control circuitry (150). The method and system of the invention significantly improved wafer (60) temperature control and process uniformity. The multi-zone illuminator module (130) selectively and controllably heats segments of the semiconductor wafer (60). Multi-point temperature sensor (132) independently performs pyrometry-based temperature measurements of predetermined points of the semiconductor wafer (60). Process control circuitry (150) operates in association with the multi-zone illuminator (130) and the multi-point temperature sensor (132) for receiving the temperature measurements and selectively controlling the illuminator module to maintain uniformity in the temperature measurements.

Abstract: A method for obtaining real-time emissivity and temperature values of a semiconductor wafer in a processing system having at least one lamp (preferably a plurality of lamps arranged in a plurality of zones so as to provide multizone temperature and emissivity values for the semiconductor wafer) arranged in at least one zone, the method using a reference wafer having a known reflectivity and the method comprising the steps of: measuring pyrometry signals for the reference wafer (step 202) and generating calibration curves from the measurements; measuring pyrometry signals for the semiconductor wafer; and obtaining the temperature and emissivity values (step 222) from the calibration curves and the measured pyrometry signals (step 220) for the semiconductor wafer.

Abstract: Radiometer with a probe beam superimposed on its field-of-view for furnace temperature measurements. The radiometer includes a heterodyne millimeter/submillimeter-wave receiver including a millimeter/submillimeter-wave source for probing. The receiver is adapted to receive radiation from a surface whose temperature is to be measured. The radiation includes a surface emission portion and a surface reflection portion which includes the probe beam energy reflected from the surface. The surface emission portion is related to the surface temperature and the surface reflection portion is related to the emissivity of the surface. The simultaneous measurement of surface emissivity serves as a real time calibration of the temperature measurement.

Abstract: An infrared sensor for determining the temperature of a car interior includes a thermistor and a thermopile in a can and a protective window which exposes the thermopile to the thermal energy of the car interior. The combined outputs of these thermally sensitive elements represents the interior radiant temperature. The effectiveness of the thermopile changes if the window gets dirty to change its output. A resistive heater on the can is used to heat the sensor during calibration. A microprocessor receiving the outputs of the sensor has an algorithm for adjusting a gain which compensates for sensor changes. When the interior temperature is stable, the sensor is heated and thermistor values before and after heating the sensor are used as a basis for adjustment of the gain.

Abstract: A computer controlled system for real-time control of semiconductor wafer fabrication process uses a multi-point, real-time, non-invasive, in-situ pyrometry-based temperature sensor with emissivity compensation to produce semiconductor wafer reflectance, transmittance, and radiant heat energy measurements. The temperature values that the sensor determines are true temperatures for various points on the wafer. The process control computer stores surface roughness values for the semiconductor wafer being examined. The surface roughness values are produced by surface roughness sensor that makes non-invasive and in-situ measurements. The surface roughness sensor performs roughness measurements of the semiconductor wafer based on coherent reflectance and scatter reflectance of the wafer. Based on surface roughness measurements, the process control computer can use the real-time, in-situ measurements of the multi-point pyrometry-based sensor to obtain real-time measurements of time wafer temperature distribution.

Abstract: A direct, noncontact temperature sensor includes an ellipsometer (104-106) to determine absorptance for layered structures and a pyrometer (102) to determine emissive power and combines the two measurements to determine temperature.

Abstract: Thermal, optical, physical and chemical characteristics of a substrate (11) surface are determined with non-contact optical techniques that include illuminating (23) the surface with radiation having a ripple intensity characteristic (51), and then measuring the combined intensities (53) of that radiation after modification by the substrate surface and radiation emitted from the surface. Precise determinations of emissivity, reflectivity, temperature, changing surface composition, the existence of any layer formed on the surface and its thickness are all possible from this measurement. They may be made in situ and substantially in real time, thus allowing the measurement to control (39, 41) various processes of treating a substrate surface. This has significant applicability to semiconductor wafer processing and metal processing.

Abstract: A pyrometer for measuring thermal radiation and emissivity for both diffusely and specularly reflecting surfaces of an object which includes, a thermal radiation detector and an optical system connected to the detector for concentrating thermal radiation originating from an object surface area on the detector, an emissivity meter connected to the optical system, the meter further comprising a radiation source supplying measuring radiation and a measuring radiation detector, an optical integrator adjacent to the object surface area arranged in the radiation path of the measuring radiation between the radiation source and the measuring radiation detector, wherein the radiation source extends through an aperture of the optical integrator and diffusely irradiates the object surface, and a shield connected to the optical integrator for preventing measuring radiation from irradiating the object surface area directly, is described.

Abstract: A multi-zone emissivity correction system and method that may be used in a multi-zone illuminator of a RTP-AVP system. The multi-zone illuminator comprises a plurality of lamps arranged in zones. A dummy lamp is also provided for each zone. A first plurality of sensors monitor the wafer and a second plurality of sensors monitor dummy lamp radiance. For each zone, an emissivity factor is determined based on the first and second pluralities of sensors. An effective black body radiance is also determined for each zone based on a wafer radiance factor for each zone and the emissivity factors.

Abstract: A real-time multi-zone semiconductor wafer temperature and process uniformity control system for use in association with a semiconductor wafer fabrication reactor comprises a multi-zone illuminator (130), a multi-point temperature sensor (132), and process control circuitry (150). The method and system of the invention significantly improved wafer (60) temperature control and process uniformity. The multi-zone illuminator module (130) selectively and controllably heats segments of the semiconductor wafer (60). Multi-point temperature sensor (132) independently performs pyrometry-based temperature measurements of predetermined points of the semiconductor wafer (60). Process control circuitry (150) operates in association with the multi-zone illuminator (130) and the multi-point temperature sensor (132) for receiving the temperature measurements and selectively controlling the illuminator module to maintain uniformity in the temperature measurements.

Abstract: An apparatus and method for remotely measuring emissivity and hence temperature of a surface of an object. The apparatus includes a detector having a radiation receptor for measuring infra-red radiation, an integrating cavity surrounding the receptor for receiving radiation from a surface facing the cavity and delivering the radiation to the receptor, at least two sources of infra-red containing radiation (e.g. light from an incandescent lamp) within the integrating cavity positioned to produce separate beams of the radiation which strike the surface at different angles suitable for reflection to the receptor, and a processor for determining the temperature of the surface from the radiation measured by the detecting means. The use of at least two mutually angled radiation beams compensates for surface anisotropy of the surface whose temperature is to be measured.

Abstract: A method for sensing the temperature of a remote object within a chamber that is heated from outside the chamber, includes sensing radiation from the object within the chamber through a window in the wall of the chamber that exhibits different transmissivity than the wall of the chamber to radiation in a selected waveband relative to the waveband of the radiation supplied through the wall of the chamber to heat the object within the chamber.

Abstract: A method and apparatus for detecting the temperature of gray and non-gray bodies in the presence of interfering radiation. A gray body has a constant emissivity less than 1 and a non-gray body has an emissivity which varies with wavelength. The emissivity and reflectivity of the surface is determined over a range of wavelengths. Spectra are also measured of the extraneous interference radiation source and the surface of the object to be measured in the presence of the extraneous interference radiation source. An auxiliary radiation source is used to determine the reflectivity of the surface and also the emissivity. The measured spectrum of the surfaces in the presence of the extraneous interference radiation source is set equal to the emissivity of the surface multiplied by a Planck function containing a temperature term T plus the surface reflectivity multiplied by the spectrum of the extraneous interference radiation source. The equation is then solved for T to determine the temperature of the surface.

Abstract: A non-contact pyrometric technique is provided for measuring the temperature and/or emissivity of an object that is being heated by electromagnetic radiation within the optical range. The measurement is made at short wavelengths for the best results. The measurement may be made at wavelengths within those of the heating optical radiation, and the resulting potential error from detecting heating radiation reflected from the object is avoided by one of two specific techniques. A first technique utilizes a mirror positioned between the heating lamps and the object, the mirror reflecting a narrow wavelength band of radiation in which the optical pyrometer detector operates. The second technique is to independently measure the a.c. ripple of the heating lamp radiation and subtract the background optical noise from the detected object signal in order to determine temperature and emissivity of the object. Both of these techniques can be combined, if desired.

Abstract: Radiated light with a specified wavelength from a material is detected and a first parameter corresponding to the emissivity ratio is obtained from the plurality of detection signals. Since the emissivity takes on different values according to the condition of the surface of the material, the first parameter changes depending on the surface condition of the material. There is a correlation between a physical value indicating a condition of the material surface and the first parameter. The correlation remains equivalent even if a second parameter corresponding to the physical value is used instead of the physical value itself (for example, an optical physical value such as reflectivity and absorptivity, the thickness of a film formed on the material surface, the surface roughness, and the degree of galvannealing). As an example of the parameter corresponding to the physical value, there is the logarithmic ratio between emissivities (ln .epsilon..sub.a /ln .epsilon..sub.

Abstract: Thermal, optical, physical and chemical characteristics of a substrate (11) surface are determined with non-contact optical techniques that include illuminating (23) the surface with radiation having a ripple intensity characteristic (51), and then measuring the combined intensities (53) of that radiation after modification by the substrate surface and radiation emitted from the surface. Precise determinations of emissivity, reflectivity, temperature, changing surface composition, the existence of any layer formed on the surface and its thickness are all possible from this measurement. They may be made in situ and substantially in real time, thus allowing the measurement to control (39, 41) various processes of treating a substrate surface. This has significant applicability to semiconductor wafer processing and metal processing.

Abstract: A unit having differing thermal emissivities at differing regions thereof is monitored with an infrared camera for deriving a signal having magnitudes representing infrared emission from multiple pixels in the camera field of view. A computer responsive to the signal (a) stores data representing emissivity and standard temperature of the unit at each of the pixels, (b) combines indications of the infrared emission from each pixel and the stored data representing emissivity of each pixel to derive an indication of monitored temperature of each pixel, (c) compares the stored data representing standard temperature of each pixel and the indications of monitored temperature of each pixel, and (d) derives an indication of the deviation between the magnitude of the standard temperature and monitored temperature at each pixel. In response to the indication of the deviation at each pixel, a property of the unit related to the deviations at the pixels is derived.

Abstract: A radiation clinical thermometer includes a probe, a detection signal processing section, a body temperature operating section, and a display unit. A filter correction section for setting a correction value based on the transmission wavelength characteristics of a filter is arranged. The body temperature operating section receives infrared data, temperature-sensitive data, and the correction value from the filter correction section so as to calculate body temperature data.

Abstract: A radiation detector with temperature readout has a multicolored LED display divided into segments of zero degrees to 9 degrees centigrade colored green, 10 degrees to 19 degrees centigrade in yellow, and 20 degrees to 100 degrees centigrade in red. Alternatively, two red segments are provided for ranges of 20 degrees to 64 degrees centigrade and 65 degrees centigrade and above, respectively. The radiation detector is automatically zeroed at ambient upon use and provides a readout of temperature rise above ambient throughout a scan of a subject. In one design, only one LED for each segment of the display is illuminated at a time. An audible signal is sounded at an increasing pulse frequency as the display is illuminated from the green segment to the red segment of measured temperature rise above ambient with a constant tone for temperature rises above about 20 degrees centigrade. In an alternative design a timing circuit allows the detector to self operate for a predetermined length of time.