Abstract: A radiation thermometer is rationally adjusted during manufacturing processes instead of requiring a user to manually adjust the radiation thermometer each time a temperature is measured, and hence, the radiation thermometer better improves temperature measurement accuracy.

Abstract: A light weight decoy for deceiving radar and forward looking infrared tracking systems. The decoy provides the same radar cross-section as that of an intercontinental ballistic missile (ICBM) and is thermally massive across the entire black body spectrum. Thermal massiveness is accomplished by measuring the temperature of the decoy outer surface and the temperature of the space surrounding the decoy, obtaining the differential temperature, and radiating heat within the decoy to maintain the surface thereof at a temperature similar to that of an ICBM.

Abstract: A method for controlling wafer temperature in a thermal reactor. A wafer is positioned between two or more surfaces, one or more of which are heated. A control temperature is calculated based on the temperatures of the surfaces. The heat applied to the surface(s) is adjusted in response to the control temperature in order to maintain the wafer temperature within narrowly defined limits.

Abstract: The radiation clinical thermometer of the present invention is provided with a light guide tube 15 to guide the infrared radiation from the temperature-measured object, a first infrared sensor 10 for detecting the infrared radiation from the light guide tube 15, a temperature sensitive sensor 12 which generates a reference temperature signal, a reference cavity 17 which has approximately the same temperature condition as the light guide tube 15 and is sealed so as to shut out infrared radiation from outside, a second infrared sensor 11 for detecting the infrared radiation from the reference cavity 17, a temperature computing means 13 for calculating temperature in accordance with the signals from the first infrared sensor 10 and the second infrared sensor 11, a temperature sensitive sensor 12, and a display unit 14 for displaying temperature in accordance with the signal from the temperature computing means 13; and at least either the light guide tube 15 or the reference cavity 17 is tapered off toward the em

Abstract: The subject invention relates to a technique employing a calibrated thermal radiometer, and the radiation characteristics of ionic crystals to measure the temperature distribution of crystals during crystal growth. When in high temperature, the ionic crystals often exhibit a transparent region having low reflectance, and low absorption in the spectrum between the short-wavelength absorption edge and the long-wavelength absorption edge. In addition, these crystals have an opaque spectral region having low reflectance and high absorption, i.e. have surface radiation of high emissivity when the spectrum is in the range between the long-wavelength absorption edge and the onset of the Reststrahlen band. The spectral emissivity of the ionic crystal may not change significantly with a variation of temperature in this opaque region.

Abstract: This invention concerns a noncontacting type thermometer which is improved in sensitivity of detection and accuracy of measurement and meanwhile adapted to prevent a thermistor element itself from self-generation of heat. A pulse voltage generating circuit 15 generates a pulse voltage of a rectangular waveform having a pulse wave height, a pulse width, and a pulse cycle enough to render negligible the effects of the self-generation of heat of a thermistor bolometer element in accordance with the thermal capacity of the thermistor bolometer. A detecting circuit 20 admits the pulse voltage, generates a differential voltage arising from a change in the magnitude of resistance corresponding to the amount of an incident infrared radiation of an infrared radiation detecting thermistor bolometer element RA, and amplifies this differential voltage by means of a differential amplifier 24.

Abstract: A method for calibrating an optical pyrometer to an external reference point. By changing the focus of the optical pyrometer without physically moving the pyrometer, calibration of the optical pyrometer can be accomplished without modifying the semiconductor operation. Broadly speaking, the present invention contemplates an apparatus for calibrating an optical pyrometer. The apparatus includes a first optical source in a heating chamber with an optical port, an optical pyrometer, a mirror, and a second optical source. The optical pyrometer is positioned to receive light rays from a first optical source residing inside the heating chamber. The second optical source is located external to the heating chamber. The second optical source serves as an external reference point. The external location of the second optical source allows for calibration of the optical pyrometer without modification of the heating chamber or the first optical source residing inside the heating chamber.

Abstract: A method of active radiometric thermometry. The target, whose temperature is to be measured, is heated briefly and locally, preferably by a pulse of laser radiation. The intensity of infrared or visible radiation emitted by the heated portion of the target is measured as a function of time. The temperature of the target is inferred from the shape of the intensity curve of the emitted radiation as a function of time.

Abstract: A sensor is provided for precisely measuring the composition of mixtures of hydrogen and oxygen gas. The sensor has an active surface, at which hydrogen and oxygen are catalytically converted into water. A transport inhibiting barrier is disposed on the active surface. The heat released during the conversion is measured, and is indicative of the mixture composition.

Abstract: Method and apparatus for non-contact temperature, emissivity and area estimation for gray and non-gray (uniform and non-uniform surface emissivity) are disclosed. Optical power measurements are obtained for radiation from a surface of interest in multiple wavelength bands. These power measurements are used to generate an expression for surface emissivity as a function of unknown temperature and surface projected area. At each of series of trial temperatures and areas within a predetermined range of physically plausible values, a value for emissivity at each measured wavelength is obtained. A best fit between these emissivity data points and a selected model emissivity function is obtained by least-squares minimization. The trial temperature and area which yield both the smallest minimum sum of squares and an emissivity value within predetermined physical constraints are concluded to be the temperature and projected surface area.

Abstract: An absolute radiation thermometer capable of evaluating the absolute value of infrared radiation power emitted from a target and received by a radiation sensor by means of electrical calibration, and calculating the temperature of the target basing on the responsive signal generated in the radiation sensor. To solve "Microphonic" problem, two identical sensors connected in parallel with the polarized orientations of their pyroelectric layers being in opposite directions so as to cancel the piezoelectric signals generated in the two sensors are used. Further, by using a floating power supply, which is isolated from the system power supply of the thermometer, for performing electrical heating, power supply noise can be greatly reduced.

Abstract: A nondestructive product level calibration method which is based on reflectance of intensity of UV and visible light that is measured from the top surface of a semiconductor wafer in a RTP closed loop process control environment in which the temperature of the wafer is regulated as a function of reflectivity of radiation at a preselected wavelength from the top surface of the wafer. In the method, sheet resistance of the wafer is measured as a function of the intensity of the UV and IR light directed at the wafer over a predetermined temperature and time range. Then, the reflectance intensity off wafer is measured to develop a model of the top surface. The reflectance model will indicate a wavelength where the reflectance is the greatest. Next, the wafer is subjected to UV radiation at the most sensitive wavelength and the reflectance is plotted against intensity of heat treatment.

Abstract: A method for remotely measuring the temperature of a target maintained at a first relatively low temperature while at the same time the target is heated by thermal radiation from a source spaced from the target and maintained at a second relatively high temperature which employs a two wavelength radiometer and a computer. First and second wavelengths are selected for use. The second wavelength is shorter than the first wavelength, both source and target exhibiting appreciable radiation at the first wavelength, the source emitting appreciable radiation while the target emits essentially no radiation at the second wavelength. The radiation of the source at the first wavelength and at the second wavelength are measured. These two source radiation measurements are stored in the computer. The radiation of the target at the first wavelength and at the second wavelength are measured. These two target radiation measurements are stored in the computer.

Abstract: A thermal difference detector for testing serviceability of a heat source includes a sensor connected via sn amplifier-filter to a microprocessor outputting an indicator. The inventive detector can be used in a system for testing the serviceability of a plurality of heat sources. The system comprises a plurality of detectors, a robotic structure, with the detectors mounted on arms of the structure, a microprocessor and an indicator unit. A method is also disclosed comprising a sequence of steps including detecting radiation from an ambient temperature source, detecting radiation from the heat source, transforming them into electrical signals and processing the signals, comparing them to each other, and making a judgement of the serviceability of the heat source based on a predetermined criteria.

Abstract: Disclosed are four improvements in temperature-measuring radiometric equipment. The first improvement is directed to increasing the sensitivity of a radiometer by employing microwave noise power derived from a reference noise source in an amount that corresponds to a temperature higher than that of the specimen, and applying the reference-noise-source-derived microwave noise power as an input to the radiometer for a shorter time than is microwave noise power derived from a specimen. The second improvement is directed to reducing emissivity error by employing open-loop means comprising a microwave circulator for applying microwave noise power generated by at least one resistor thermostatically heated to a temperature in the neighborhood of the temperature of a patient's body tissue back to the body tissue.

Abstract: A radiation pyrometer assembly and method for sensing the temperature of an elongate body, such as metal strip, moving longitudinally in the direction of its length includes a spray gun which deposits a narrow stripe of black paint of a uniform emissivity, upon one surface of the strip as it moves towards a temperature sensing station. The sensing station includes a calibration radiation pyrometer arranged to view the black stripe once the temperature of the stripe has reached the temperature of the strip. The accuracy of the apparatus may be improved by the provision of a process control radiation pyrometer directed to the opposite, unpainted surface of the strip the combined readings from the two pyrometers allow the correction of otherwise unpredictable errors in the temperature of the strip.

Abstract: A pyrometer for measuring the electromagnetic radiation emitted by an object comprises a first detector to which the radiation is delivered through an optical system as well as a second detector to which the radiation emanating from a reference element is delivered through the same optical system. The temperature of the reference element is monitored and a rotary optical modulator periodically enables and disables the delivery of radiation to the detectors. The output signals from the two detectors are processed to determine the difference therebetween. The sensed temperature of the reference element is taken into account as a part of determining the difference between the two detector output signals. In this way it is possible for the characteristic radiation of the optical system largely to be suppressed. The optical modulator comprises a semi-circular disk having a polyethylene terephthalate substrate coated on each side with metal. The disk is rotated through 180.degree.

Abstract: The apparatus is a thermal detector which uses an active detector element and a compensator detector element, particularly in a voltage divider configuration. Radiation from a scene of interest impinges on the active detector element and radiation from an electronically modulated light source impinges on the compensator detector element.

Abstract: A nondestructive product level calibration method which is based on reflectance of intensity of UV and visible light that is measured from the top surface of a semiconductor wafer in a RTP closed loop process control environment in which the temperature of the wafer is regulated as a function of reflectivity of radiation at a preselected wavelength from the top surface of the wafer. In the method, sheet resistance of the wafer is measured as a function of the intensity of the UV and IR light directed at the wafer over a predetermined temperature and time range. Then, the reflectance intensity off wafer is measured to develop a model of the top surface. The reflectance model will indicate a wavelength where the reflectance is the greatest. Next, the wafer is subjected to UV radiation at the most sensitive wavelength and the reflectance is plotted against intensity of heat treatment.

Abstract: A method for determining characteristic features of processes forming radicals by sensing the temperature and/or the concentration of radicals with detectors in zones that are monitored by at least 2 detectors.

Abstract: A thermal difference detector for testing serviceability of a heat source includes a sensor connected via an amplifier-filter to a microprocessor outputting an indicator. The inventive detector can be used in a system for testing the serviceability of a plurality of heat sources. The system comprises a plurality of detectors, a robotic structure, with the detectors mounted on arms of the structure, a microprocessor and an indicator unit. A method is also disclosed comprising a sequence of steps including detecting radiation from an ambient temperature source, detecting radiation from the heat source, transforming them into electrical signals and processing the signals, comparing them to each other, and making a judgement of the serviceability of the heat source based on a predetermined criteria.

Abstract: Method and apparatus for measuring thermal radiation emitted by a sample, and for determining emissivity. The apparatus comprises a chamber in which the sample may be positioned, the chamber comprising a plurality of walls including a first wall containing an observation port. The chamber is located in a cold environment, and the walls of the chamber are brought to a selected temperature by circulating a temperature conditioned fluid through the walls. The sample is moved along a movement axis within the chamber past the observation port. As the sample is so moved, radiation emitted outwards through the observation port by the sample is measured.

Abstract: In a new method, a defective electrochemical cell is detected by non-invasive means before assembly into a battery comprising multiple cells. The method detects faulty cells by sensing and detecting variations in the intensity level of infrared radiation emitted from an exterior surface of the cell or battery. The scanning and detection, preferably, is conducted by sensing infrared energy in a range of about 2 to about 12 um (microns) emitted from the major surface of the cell or battery. The variations are recorded as a function of geometric variables indicative of the geographic position of the variations.

Abstract: In a device for detecting excessively heated components or locations in moving objects, in particular in moving rail vehicles, such as bearings, brakes and/or wheel rims, having at least one infrared beam detector (7) and optical devices for representing the image of the measuring point on the infrared beam detector (7), a separate lens (1, 2) is aimed toward each measuring point, which focuses the image of the measuring point on different points (4, 5) of an image-correcting system (3), and a scanning device (9), which periodically picks up the measuring beams, is disposed between the image-correcting system (3) and the detector (7) and focuses the measuring beams onto the detector (7) which is common to all measuring points.

Abstract: A method and apparatus are provided for determining a process parameter of a material in a processing system having two containers. The material being monitored is disposed in one container and a single thermal energy control device is applied to both containers. The heat flux of each container is determined while the single thermal control device is applied to both containers. The process parameter is determined in accordance with the determined heat flux. The thermal energy control device may be a single heating surface for warming the two containers, or a cooling device such as a refrigerator. The process parameter may be the drying rate of the material and the drying rate can be determined during the processing of the material. The drying rate and the percent of drying can be displayed and the thermal energy level of the containers can be controlled according to the determined drying rate. A calibration procedure for calibrating the apparatus is also provided.

Abstract: A method is disclosed for continuously measuring the temperature of a semiconductor substrate in a chamber is disclosed. The first step of the method involves providing a substantially clean semiconductor substrate having a layer a reflective surface thereon into a chamber. A film is formed superjacent the surface by introducing a gas comprising at least one of N.sub.2, NH.sub.3, O.sub.2, N.sub.2 O, Ar, Ar--H.sub.2, H.sub.2, GeH.sub.4, or any fluorine based gas and photon energy in situ. The photon energy, having a wavelength substantially in the absorption band of silicon, generates a temperature substantially within the range of 500.degree. C. to 1250.degree. C. Subsequently, the reflectivity of the surface is measured prior to introducing the gas, and continuously, while forming the film until the film is substantially formed. The substrate is exposed to photon energy having a power level responsive to the measured reflectivities of the film.

Abstract: A temperature sensor assembly for monitoring railroad car wheels includes an array of temperature detectors arranged to generate a temperature profile of the wheel. The array may be formed integrally with imaging elements and signal conditioning elements on a single IC chip. The assembly may be arranged to monitor the wheel either transversely or in parallel to the direction of wheel movement.

Abstract: A method and apparatus for detecting the temperature of gray and non-gray bodies in the presence of interfering radiation. A gray body has a constant emissivity less than 1 and a non-gray body has an emissivity which varies with wavelength. The emissivity and reflectivity of the surface is determined over a range of wavelengths. Spectra are also measured of the extraneous interference radiation source and the surface of the object to be measured in the presence of the extraneous interference radiation source. An auxiliary radiation source is used to determine the reflectivity of the surface and also the emissivity. The measured spectrum of the surfaces in the presence of the extraneous interference radiation source is set equal to the emissivity of the surface multiplied by a Planck function containing a temperature term T plus the surface reflectivity multiplied by the spectrum of the extraneous interference radiation source. The equation is then solved for T to determine the temperature of the surface.

Abstract: In a nondestructive thermographic evaluation technique, a selected amount of energy is applied to a first object having a known surface structure. An image of the first object is formed within the dynamic limits of an imaging device which preferably includes a white bar. The image is stored on a recording device and enhanced using an image processor. The selected amount of energy is then applied to a second object which is imaged by the imaging device, and the image of the second object is also enhanced. The images of the first and second objects are then compared to determine whether there are any differences in the surface structure of the two objects.

Abstract: A method and apparatus is used to determine the thickness of a layer deposited on a specimen. For example, the thickness of a layer of polycrystalline may be measured as it is deposited over silicon oxide on a silicon wafer. The intensity of radiation emission at the top of the silicon wafer is detected. The temperature of the silicon wafer is measured and the variation in the intensity of radiation emission due to variation of the temperature is subtracted from the intensity of radiation emission detected at the top of the silicon wafer. The resultant signal is used to calculate the thickness of the polycrystalline silicon layer.

Abstract: Temperature measurement apparatus comprising an IR temperature change detector, a chopper for intermittently exposing the detector to an object whose temperature is to be measured, and means for providing an output indication representing the temperature of the object in response to the output of the detector, wherein the chopper is driven by a quartz timepiece movement.

Abstract: A radiation clinical thermometer has a probe with an optical guide and an infrared sensor, a detection signal processing section, a body temperature operating section, and a display unit. A filter correction system for setting a correction value based on the transmission wave length characteristics of a filter is also provided. The body temperature operating section receives infrared data, temperature sensitive data, which takes into account the temperature equilibrium between the optical guide and the infrared sensor, and a correction value from the filter correction section so as to calculate body temperature data.

Abstract: In one embodiment, a system for measuring the temperature of a first object, such as wafer 112, in the presence of a second radiating object, such as a heating lamp 118, is disclosed herein. A heating lamp 118 is provided for heating the wafer 112 for device processing. Both the wafer 112 and the lamp 118 emit radiation. A first detector 120 detects radiation emitted by both the wafer 112 and the lamp 118. A second detector 122 which detects radiation from only the heating lamp 118 may also be used. A modulation source 126 is provided for modulating the heater 118 to a selected modulation depth M.sub.L such that the temperature of the lamp 118 varies with the selected AC modulation and the temperature of the wafer 112 remains substantially constant. Also, circuitry is provided for determining the fraction of radiation emitted by the lamp and collected by the first detector 120 (lamp interference signal) based upon the heating lamp modulation and then calculating the precise temperature of the wafer 112.

Abstract: A sensor includes two thermal energy detectors thermally insulated from one another. The first detector is warmed or cooled by radiation between it and the object being measured. The second detector is warmed or cooled by exchange of thermal energy with a thermal reference source until the second detector reaches a temperature that is a predetermined ratio with that of the first detector. A control circuit which receives signals from the detectors that represent their temperatures, provides control for the thermal reference. A third detector measures the temperature of the thermal reference source and provides a signal representative of the temperature of the reference source. A processor receives the signal from the third detector and provides a signal indicative of the temperature of the object.

Abstract: A thermometer includes an infrared sensor (14) for receiving infrared radiation to generate a corresponding electrical signal; a reference unit (10) for emitting a standard infrared radiation; a temperature sensor (11) for receiving the standard infrared radiation to generate a corresponding standard electrical signal; a support unit (1, 2) for supporting the infrared sensor and the reference means such that the infrared sensor receives the standard infrared radiation from the reference means in a standby state and infrared radiation from a subject in a measurement state; an arithmetic unit (44) for computing a temperature of the subject based on the electrical signals from the infrared sensor in both the standby and measurement states and from the temperature sensor.

Abstract: Apparatus for optically determining the temperature of an object in an environment at elevated temperature provides enhanced measurement accuracy by sensing radiation from the object in two or more different wavebands of radiation. The information derived therefrom is cyclically sampled and processed to provide corrected emissivity of the object. The temperature of the object is accurately determined from the corrected emissivity and sensed radiation therefrom. The apparatus includes a radiation detector for receiving radiation during an interval, an optical filter structure with a plurality of optical filters of different radiation transmissive characteristics, and sampling circuits for receiving the radiation signal from the detector during a selected period within the interval during which radiation is supplied to the detector; wherein the selected period is shorter than the interval, is determined in response to the cyclic operation of the filter structure, and contains the least amlitude gradient.

Abstract: A non-contact pyrometric technique is provided for measuring the temperature and/or emissivity of an object that is being heated by electromagnetic radiation within the optical range. The measurement is made at short wavelengths for the best results. The measurement may be made at wavelengths within those of the heating optical radiation, and the resulting potential error from detecting heating radiation reflected from the object is avoided by one of two specific techniques. A first technique utilizes a mirror positioned between the heating lamps and the object, the mirror reflecting a narrow wavelength band of radiation in which the optical pyrometer detector operates. The second technique is to independently measure the a.c. ripple of the heating lamp radiation and subtract the background optical noise from the detected object signal in order to determine temperature and emissivity of the object. Both of these techniques can be combined, if desired.

Abstract: An infrared detector receives infrared energy from the target and provides a detector signal based primarily on the difference between the infrared detector temperature and the temperature of the reference temperature area of the detector. A contact temperature measurement device provides a reference signal which is a function of the temperature of the reference temperature area of the detector. A processor receives the detector and reference signals and combines the two signals in a non-linear manner to result in a signal which is representative of the temperature of the target. The method of non-linearly combining includes the use of gain and offset terms which may be altered to a limited extent by a technician in the field with a blackbody calibration source. As a result of the recalibration, accurate target temperature measurements are continually provided.

Abstract: A temperature sensor comprising a probe, infrared fibers, super-cooled detors and their associated electronics, and a computer for determining the temperature from the output of the electronics. Photons from a heat source are collected by the infrared fibers and transmitted to the detectors where they are amplified by the electronics. A voltage is then outputted which represents measured temperature. The voltage is sampled by the computer where it is converted to temperature by use of computer algorithms.

Abstract: An infrared image monitoring system according to the present invention includes an infrared camera and a visible light camera, both viewing the same scene to be monitored. The visible light camera has a threshold means, for example, an optical filter, to attenuate the visible light input to the visible light camera to a level below which the visible light camera can not detect the scene. The output of the visible light camera indicates reflections of the sun light which are brighter than a predetermined threshold level. The output of the visible light camera is superposed over the temperature pattern of the scene measured with the infrared camera, so that the area having the reflection is deleted from the data of the temperature pattern. Thus processed temperature data is further processed with a conventional process so as to judge whether a rise in the temperature data is abnormal or not.

Abstract: A thermal radiation sensor is joined with a shutter that is adapted for reversible interruption of radiation from an object to the sensor. The shutter includes an integral electrically operated heater for maintaining a portion of the shutter at a predetermined temperature as a thermal reference for the sensor. The sensor is alternatively exposed to radiation from the object and the thermal reference portion of the shutter, and provides a first signal representative of the radiation that it receives from the object and a second signal representative of the radiation that it receives from the reference portion. An electronic circuit is connected to the sensor for receiving the first and second signals, for calculating the temperature of the object, and for providing a signal representative of the calculated temperature.

Abstract: The system and method for pyrometrically determining the temperature of a semiconductor wafer within a processing chamber accurately determines the actual emissivity of the semiconductor wafer at a reference temperature using multiple pyrometers operating at different wavelengths. The pyrometers are calibrated for radiation received from the processing chamber and their responses are then corrected to provide the proper temperature indication for a master wafer at a known reference temperature to yield emissivity of the master wafer. Other similar wafers exhibiting extreme values of emissivity are sensed at the reference temperature to provide pyrometer responses that are corrected in accordance with the master emissivity, and such corrected responses are used to establish a correlation between emissivities and the corrected pyrometer responses.

Abstract: A method for remotely measuring an unknown temperature Ts of a transparent medium by comparison with the known temperature Tr of a transparent reference material consisting of the steps ofcombining the outputs of a continuous-wave (CW) laser and a high intensity pulsed laser to form a combined laser output beam, wherein the high intensity pulse component of the output beam exceeds the intensity required to produce stimulated Brillouin scattering (SBS) in the transparent medium;splitting the combined laser output beam into first and second sub-beams;amplifying the CW components of the first sub-beam to an intensity exceeding the intensity required to produce stimulated Brillouin scattering (SBS) in the reference material while simultaneously suppressing the pulse components in the first sub-beam;directing the first sub-beam with the amplified CW component into the reference material and thereby generating a CW phase-conjugate beam;directing the second sub-beam into the transparent medium and generating a pulse

Abstract: A temperature-measuring method comprises inputing laser pulses into an optical fiber to be measured and measuring temperature distribution in the fiber from the ratio of the amplitudes and the delay time of Stokes light and anti-Stokes light contained in the return beam from the optical fiber, wherein the temperature distribution is measured by using equations: ##EQU1## where T(x) is temperature to be measured, .THETA. is the reference temperature, R' (T) is the relative ratio of amplitude at the measuring point, R' (.THETA.) is the relative ratio of amplitude at the reference temperature point, k is Boltzmann's constant, h is Planck's constant, c is velocity of light, .nu. is Raman shift, .alpha. is distance, wherein the attenuation difference .alpha. is represented by a function .alpha.{T(.tau.)} dependent on temperature T(.tau.) at the measuring point .tau., and the exponential function in which the exponential part is represented by a value obtained by integrating the function .alpha.{T(.tau.

Abstract: A system for measuring the temperature of a semiconductor wafer 12 comprises a light source 14, a photodetector 20 which is operable to determine light intensity, and a mirror 18 in a predetermined fixed position from a beam splitter 16. The components are positioned such that light from the light source 14 impinges the beam splitter 16 and subsequently reflects off the mirror 18 and the wafer 12 and is received by the photodetector 20. Changes in the temperature of the wafer 12 are calculated based upon changes in the intensity of the received light which depends upon the expansion/contraction of the wafer. The absolute temperature may be calculated based on a known reference temperature and the changes in wafer 12 temperature. A second system and method for measuring the temperature of a semiconductor wafer which includes the use of a plurality of mirrors and two beam splitters is also disclosed.

Abstract: A scanning infrared sensor (10) in which the scanner (21), detector (32) and temperature converter (35) are all contained in proximity with one another in a single housing assembly (18) enables correction of both emissivity based on emissivity settings (41) for each of a plurality of spot targets (16') along a scan line (16) and correction for DC offset errors based on reference temperature measurement (45) of hot and cold references (34, 36). Correction is performed before digital conversion by an A/D converter (56) by a nulling circuit (46), a programmable gain circuit (50) and a bias circuit (62) to produce corrected digital temperature signals on a plurality of output ports (26) respectively associated to a plurality of spot targets (16') along a scan line (16) on a target (12) which are individually connectable with a multiple temperature display (27), a temperature recorder (28) and a process control (30).

Abstract: A temperature compensation type infrared sensor includes a substrate having a central pit and functioning as a heat sink with an insulation film formed on the top face of the substrate and defining a diaphragm located above the pit, a plurality of thermocouples disposed on the insulation film and connected in series with each of said thermocouples having a hot junction on said diaphragm and a cold junction on the heat sink, and a thermopile element including a black body on the central portion of the diaphragm in the insulation film for absorbing infrared rays with the thermopile element being placed on a thermistor chip for compensating temperature.

Abstract: A temperature-measuring method which comprises inputting laser pulses into an optical fiber to be measured and measuring the temperature distribution in the fiber from the ratio of the amplitudes and the delay time of the Stokes light and the anti-Stokes light contained in the return beam from the optical fiber, wherein the temperature distribution is measured by using an equation: ##EQU1## where T(x) is the temperature to be measured, .THETA. is the reference temperature, R'(T) is the relative ratio of amplitude to the measuring point, R'(.THETA.) is the relative ratio of amplitude at the reference temperature point, k is the Boltzmann's constant, h is the Planck's constant, c is the velocity of light, .nu. is the Raman shift, .alpha. is the attenuation difference in the optical fiber between the Stokes light and the anti-Stokes light, and x is the distance, wherein the attenuation differenct .alpha. is represented by a function .alpha.{T(.tau.)} which is dependent on the temperature T(.tau.

Abstract: A radiation clinical thermometer includes a probe, a detection signal processing section, a body temperature operating section, and a display unit. A filter correction section for setting a correction value based on the transmission wavelength characteristics of a filter is arranged. The body temperature operating section receives infrared data, temperature-sensitive data, and the correction value from the filter correction section so as to calculate body temperature data.

Abstract: A method is disclosed for continuously measuring the temperature of a semiconductor substrate in a chamber is disclosed. The first step of the method involves providing a substantially clean semiconductor substrate having a layer a reflective surface thereon into a chamber. A film is formed superjacent the surface by introducing a gas comprising at least one of N.sub.2, NH.sub.3, O.sub.2, N.sub.2 O, Ar, Ar--H.sub.2, H.sub.2, GeH.sub.4, or any fluorine based gas and photon energy in situ. The photon energy, having a wavelength substantially in the absorption band of silicon, generates a temperature substantially within the range of 500.degree. C. to 1250.degree. C. Subsequently, the reflectivity of the surface is measured prior to introducing the gas, and continuously, while forming the film until the film is substantially formed. The substrate is exposed to photon energy having a power level responsive to the measured reflectivities of the film.