Abstract: An on-chip optical filter including three different arm sections comprised of three different types of waveguides, e.g. shape, material or polarization, can achieve the same performance quality as external commercially available solutions with no addition costs of fabrication of the photonic integrated chip (PIC) and a footprint several orders of magnitude smaller than any of the conventional filters.

Abstract: In accordance with the present invention, an elongated phase shifting diode is provided for modulating an electrical signal onto an optical wave. Structurally, the phase shifting diode includes a p doped central stripe that extends through a phase shifting length L of a waveguide. P+ doped finger stripes and N+ doped finger stripes, which are laterally and axially offset from each other, extend into the waveguide for contact with the p doped central stripe along the length L. In combination, the plurality of N+ doped finger stripes and the p doped central stripe create a plurality of PN junctions that are structurally aligned along the p doped central stripe to establish electrically parallel phase shifting functions for the elongated diode.

Abstract: An coherent transceiver includes a single silicon photonics substrate configured to integrate a laser diode chip flip-mounted and coupled with a wavelength tuning section to provide a laser output with tuned wavelengths which is split in X:Y ratio partly into a coherent receiver block as local-oscillator signals and partly into a coherent transmitter block as a light source. The coherent receiver includes a polarization-beam-splitter-rotator to split a coherent input signal to a TE-mode signal and a TM*-mode signal respectively detected by two 90-deg hybrid receivers and a flip-mounted TIA chip assisted by two local-oscillator signals from the tunable laser device.

Abstract: An integrated photonic device is provided with a photonic crystal lower cladding on a semiconductor substrate.

Abstract: An optical branching/coupling device includes: a first optical branching unit that splits first light with a first and a second wavelength, and outputs second light and third light; a wavelength selector that receives the second light, receives fourth light with a third wavelength, output fifth and sixth light, one of the fifth light and the sixth light including an optical signal of the first wavelength of the second light and including the fourth light, and the other including an optical signal of the second wavelength; a first light switch that receives the fifth light and the sixth light, output one of the fifth light and the sixth light as seventh light, and output the other as eighth light; and a second light switch that receives the third light, receives the eighth light, and outputs the third or the eighth light that have been input as ninth light.

Abstract: A radio frequency, RF, waveguide array. The array comprises a substrate and an electrical RF transmission line array. The substrate comprises a plurality of optical waveguides, each waveguide being elongate in a first direction. The electrical RF transmission line array is located on a face of the substrate and comprises a plurality of RF transmission lines. Each transmission line comprises a signal electrode and at least two ground electrodes located on either side of the signal electrode. Each electrode extends in the first direction. Each signal electrode is positioned to provide a signal to two respective waveguides, i.e. each RF transmission line is positioned adjacent to two respective waveguides. The ground electrodes include at least two intermediate ground electrodes positioned between each pair of signal electrodes. Intermediate ground electrodes of different RF transmission lines are separated from each other by channels.

Abstract: Provided is an optical element module including: a substrate; an optical modulator unit that is formed in the substrate and includes an optical waveguide; a first lens unit that is disposed on an end surface of the substrate, and includes a lens portion at which a signal light beam emitted from the optical modulator unit is collimated; and a second lens unit that introduces the signal light beam passing through the first lens unit to an optical fiber.

Abstract: Disclosed herein is an optical waveguide element that includes a substrate and a waveguide layer formed on the substrate and comprising lithium niobate. The waveguide layer has a slab part having a predetermined thickness and a ridge part protruding from the slab part. The maximum thickness of the slab part is 0.05 times or more and less than 0.4 times a wavelength of a light propagating in the ridge part.

Abstract: Methods and systems for a low-parasitic silicon high-speed phase modulator are disclosed and may include in an optical phase modulator that comprises a PN junction waveguide formed in a silicon layer, wherein the silicon layer may be on an oxide layer and the oxide layer may be on a silicon substrate. The PN junction waveguide may have fingers of p-doped and n-doped regions on opposite sides along a length of the PN junction waveguide. Contacts may be formed on the fingers of p-doped and n-doped regions. The fingers of p-doped and n-doped regions may be arranged symmetrically about the PN junction waveguide or staggered along the length of the PN junction waveguide. Etch transition features may be removed along the p-doped and n-doped regions.

Abstract: In some embodiments, an apparatus includes a memory and a processor operatively coupled to the memory. The processor is configured to send a stimulus signal at a frequency that corresponds to a first frequency value to a tributary channel of a coherent optical transponder. The processor is configured to adjust an amplitude of the stimulus signal and receive a first plurality of output optical power values. The processor is configured to adjust the frequency of the stimulus signal and receive a second plurality of output optical power values. The processor is configured to determine a bandwidth limitation and a modulation nonlinearity, and then send a first signal to a first filter to reduce the bandwidth limitation and a second signal to a second filter to reduce the modulation nonlinearity.

Abstract: In an embodiment, an optical modulator comprising an optical path having at least one optical waveguide, and an impedance formed along the optical path, wherein the impedance comprises a capacitance that increases along the optical path. In another embodiment, a method for increasing bandwidth of an optical modulator by applying a first voltage applied to a beginning of a resistive line. and applying a second voltage applied to an end of the resistive line; wherein the first voltage is less than the second voltage.

Abstract: A semiconductor device including an optical waveguide and a p-type semiconductor portion is configured as follows. The optical waveguide includes: a first semiconductor layer formed on an insulating layer; an insulating layer formed on the first semiconductor layer; and a second semiconductor layer formed on the insulating layer. The p-type semiconductor portion includes the first semiconductor layer. The film thickness of the p-type semiconductor portion is smaller than that of the optical waveguide. By forming the insulating layer between the first semiconductor layer and the second semiconductor layer, control of the film thicknesses of the optical waveguide and the p-type semiconductor portion is facilitated. Specifically, when the unnecessary second semiconductor layer is removed by etching in a step of forming the p-type semiconductor portion, the insulating layer which is the lower layer functions as an etching stopper, and the film thickness of the p-type semiconductor portion can be easily adjusted.

Abstract: An electronic component mounting package includes a body portion which accommodates an electronic component; a flexible substrate. The body portion comprises a notched portion which is open to a lower surface and a side surface thereof, and is provided with a projecting ridge portion which extends along a side end portion of the notched portion on a side surface side of the notched body portion. The flexible substrate extends from an interior of the notched portion to an exterior of the notched portion, and comprises a fixed end portion joined to a terminal of a coaxial connector disposed on a bottom surface of the notched portion, and a free end portion extending to the exterior of the notched portion. The flexible substrate abuts on the projecting ridge portion to be bent.

Abstract: Optical modulators with semiconductor based optical waveguides interacting with an RF waveguide in a traveling wave structure. The semiconductor optical waveguide generally comprise a p-n junction along the waveguide. To reduce the phase walk-off between the optical signal and the RF signal, the traveling wave structure can comprise one or more compensation sections where the phase walk-off is reversed. The compensation sections can comprise a change in dopant concentrations, extra length for the optical waveguide and/or extra length for the RF waveguide. Corresponding methods are described.

Abstract: A thin-plate LN optical control device includes: a thin-plate LN optical waveguide element which includes an optical waveguide formed by thermal diffusion of Ti in a substrate made of lithium niobate, and a control electrode that is formed on the substrate and is configured to control a light wave propagating through the optical waveguide, and in which at least a part of the substrate is thinned; and a housing that accommodates the thin-plate LN optical waveguide element in an air-tight sealing manner. Oxygen is contained in a filler gas inside the housing.

Abstract: The purpose of the present invention is to allow a silicon photonics modulator to be operated at high speed with high frequency by providing an electrode structure for the small multichannel high-density silicon photonics modulator. This electrode structure for a silicon photonics modulator includes, on the planar surface of a silicon substrate, a first layer for forming a plurality of bias electrical wirings, and a second layer formed by aligning each of a plurality of ground electrode portions and each electrical wiring in the first layer.

Abstract: An optical module includes a laser light supply system and a chip disposed within a housing. The chip includes a laser input optical port and a transmit data optical port and a receive data optical port. The optical module includes a link-fiber interface exposed at an exterior surface of the housing. The link-fiber interface includes a transmit data connector and a receive data connector. The optical module includes a polarization-maintaining optical fiber connected between a laser output optical port of the laser light supply system and the laser input optical port of the chip. The optical module includes a first non-polarization-maintaining optical fiber connected between the transmit data optical port of the chip and the transmit data connector of the link-fiber interface. The optical module includes a second non-polarization-maintaining optical fiber connected between the receive data optical port of the chip and the receive data connector of the link-fiber interface.

Abstract: A pluggable electric connector can communicate a communication data signal and a control signal with an optical communication apparatus. An optical signal output unit includes a Mach-Zehnder type optical modulator including a phase modulation area and outputs an optical modulation signal modulated according to the communication data signal. An optical power control unit can control optical power of the optical modulation signal. A pluggable optical receptor can output the optical modulation signal to an optical fiber. A control unit controls a modulation operation of the optical signal output unit and the bias voltage applied to the phase modulation area. The control unit determines the bias voltage applied to the phase modulation area according to phase angle information of the control signal. The optical signal output unit applies the bias voltage determined by the control unit to the phase modulation area.

Abstract: An electro-optic device includes a first semiconductor layer including the rib-type waveguide, which includes a rib part and a first slab part, which extends in a first direction from the rib part; a dielectric layer, which is formed on the rib part; a second semiconductor layer, which extends in a second direction, which is opposite to the first direction, from an upper surface of the dielectric layer; a first high-concentration impurity region, which is formed in the first semiconductor layer to be in contact with the first slab part on the first direction side; and a second high-concentration impurity region, which is formed in a region of the second semiconductor layer on the second direction side. The second high-concentration impurity region is formed in a region other than a region overlapping the first semiconductor layer in a lamination direction.

Abstract: A semiconductor optical element is disclosed. The semiconductor optical element includes: a mesa-shaped optical waveguide formed on a substrate; a modulation electrode formed on the optical waveguide; a first resin layer that buries side surfaces of the optical waveguide; a bonding pad formed on the first resin layer; and a connecting wiring line that connects the modulation electrode and the bonding pad. In the semiconductor optical element, side surfaces of the bonding pad are partially covered with a second resin layer provided on the first resin layer, and the connecting wiring line extends on the second resin layer.

Abstract: Methods and systems for a connectionless integrated optical receiver and transmitter test are disclosed and may include an optoelectronic transceiver comprising a transmit (Tx) path and a receive (Rx) path, with each path comprising optical switches. The transceiver may be operable to: generate a first modulated optical signal utilizing a modulator in the Tx path, couple the first modulated optical signal to a first optical switch in the Rx path via a second optical switch in the Tx path when the optoelectronic transceiver is configured in a self-test mode, receive a second modulated optical signal via a grating coupler in the Rx path when the optoelectronics transceiver is configured in an operational mode, and communicate the second modulated optical signal to a photodetector in the Rx path via the first optical switch. The first modulated optical signal may be communicated to a grating coupler in the Tx path via the second optical switch.

Abstract: A method and apparatus for characterizing and compensating optical impairments in an optical transmitter includes operating an optical transmitter comprising a first and second parent MZ, each comprising a plurality of child MZ modulators that are biased at respective initial operating points. An electro-optic RF transfer function is generated for each of the plurality of child MZ modulators. Curve fitting parameters are determined for each of the plurality of electro-optic RF transfer functions and operating points of each child MZ modulator are determined using the curve fitting parameters. An IQ power imbalance is determined using the curve fitting parameters. Initial RF drive power levels are determined that compensate for the determined IQ power imbalance. The XY power imbalance is determined for initial RF drive power levels using the curve fitting parameters.

Abstract: An optical modulator circuit includes first and second electrodes, first and second p-n junction segments (PNJSs), and first and second optical waveguides. The first PNJS includes a first modulating p-n junction (MPNJ) in series with a first non-modulating device (NMD) that are connected to the first and second electrodes, respectively, where the first NMD includes a first substantially larger capacitance than the first MPNJ. The second PNJS includes a second NMD in series with a second MPNJ that are connected to the first and second electrodes, respectively, where the second NMD includes a second substantially larger capacitance than the second MPNJ. The first and second optical waveguides superimpose the first and second MPNJs, respectively, where the first and second MPNJs are configured to modulate a refractive index of the first and second optical waveguides, respectively, based on the substantially larger capacitance of the first NMD and the second NMD.

Abstract: A Mach-Zehnder waveguide modulator comprising a left arm including a left SiGe optical waveguide, and a right arm including a right SiGe optical waveguide; wherein each of the left and right optical waveguides comprises a junction region and a plurality of electrodes for providing a bias across the junction to enable control of the phase of light travelling through the junction regions via dispersion.

Abstract: A method includes monitoring a parameter of an optical signal transmitted between two endpoints via an optical fiber. The optical fiber may be manipulated to modulate the parameter without disconnecting either endpoint of the optical fiber. Data in accordance with the modulation of the monitored parameter may be identified. A portion of the optical fiber may be wrapped around a high order mode filter (HOMF) that includes a grooved cylinder or mandrel suitable for wrapping the optical fiber. The monitored parameter may include a received power parameter. The HOMF may be a variable diameter HOMF that can be transitioned between a wrapped or attenuating diameter and an unwrapped or non-attenuating diameter in accordance with a data pattern. The wrapped and unwrapped diameters may be defined relative to a threshold diameter, above which the monitored parameter may be independent of the diameter.

Abstract: An intersecting splitter configured so that the branching ratio of each optical splitter differs in accordance with the difference in the number of intersections in each branched waveguide. The branching ratios (totaling 100%) of the optical splitters are adjusted so that the branching ratios on the high side as to the number of intersections is high in comparison with the branching ratios on the low side as to the number of intersections, and it is thereby possible to level the total loss.

Abstract: Modulation electrodes, bias electrodes, and bias electrodes are disposed in this order in a light wave-travelling direction in an optical modulation region modulating light having a wavelength. On the other hand, in an optical modulation region modulating light having a wavelength, the bias electrodes, the bias electrodes, and the modulation electrodes are disposed in this order in the light wave-travelling direction. That is, an order of the modulation electrodes and the bias electrodes in a longitudinal direction of a substrate is changed for each of the wavelengths.

Abstract: An optical modulator includes an optical modulation element including a plurality of signal electrodes and the like, a plurality of lead pins and the like for inputting radio frequency signals, and a relay substrate in which conductor patterns and the like that electrically connect the lead pins with the signal electrodes respectively are formed, the relay substrate is disposed so that a propagation direction of the radio frequency signals that have propagated through the lead pins is bent and guided to the conductor patterns, and the relay substrate is constituted so that widths of gaps between the plurality of conductor patterns in the optical modulator-side edge of the relay substrate is smaller than, preferably smaller than 50% of widths of gaps between the plurality of conductor patterns in the lead pin-side edge.

Abstract: An optical device is provided, which includes: an optical waveguide provided in a substrate having an electro-optic effect; a signal electrode provided on the substrate and above the optical waveguide; and a peeling prevention film which is provided on at least a part of an outer peripheral portion of the substrate and at a position spaced apart from the signal electrode, and also serves as a ground electrode.

Abstract: A digital-electronic-to-analog-optical converter, which has a structure consistent with a super-Mach-Zehnder interferometer, and which can perform the functionalities of both a Digital to Analog Converter (DAC) and a digital modulator uses a sub-Mach-Zender modulator to modulate optical wave signals propagating through its optical waveguide in a push-pull manner. The modulation performed is phase modulation realized with electrodes positioned near the optical wave guide where such electrodes carry modulation signals in digital, analog or discrete time signal format creating electromagnetic or electric fields that engage the optical wave signals traveling through the waveguide thus imparting a phase shift onto the optical wave signals. The amount of the phase shift can be implemented through the geometry of the electrodes, the length of time the modulating signal is applied, and the amplitude of the modulating signal.

Abstract: An optical biosensor, and a method of manufacturing the same, includes a first layer, a second layer stacked on the first layer, a first grating coupler within the first layer and the second layer, and a second grating coupler within the first layer. The first grating coupler is configured to couple a light pattern provided to a front side of the optical biosensor. The second grating coupler is configured to output the light pattern coupled by the first grating coupler to a photoelectric conversion element on a rear side of the optical biosensor.

Abstract: A dual-ring-modulated laser includes a gain medium having a reflective end coupled to a gain-medium reflector and an output end coupled to a reflector circuit to form a lasing cavity. This reflector circuit comprises: a first ring modulator; a second ring modulator; and a shared waveguide that optically couples the first and second ring modulators. The first and second ring modulators have resonance peaks, which are tuned to have an alignment separation from each other. During operation, the first and second ring modulators are driven in opposing directions based on the same electrical input signal, so the resonance peaks of the first and second ring modulators shift wavelengths in the opposing directions during modulation. The modulation shift for each of the resonance peaks equals the alignment separation, so the resonance peaks interchange positions during modulation to cancel out reflectivity changes in the lasing cavity caused by the modulation.

Abstract: An apparatus comprised of a cascaded series of optical modulators addressed by a multi-bit digital word with each optical modulator in the cascaded series being responsive to a single bit in the multi-bit digital word and wherein each of the optical modulators in the cascaded series of optical modulators doubling in effective optical length as a bit index of the bit of the multi-bit digital word to which it is responsive increases by a bit index value equal to one. The apparatus may be used with a prior art analog optical modulator and an associated ADC, having a fixed bit width, to extend the number of bits beyond the fixed bit width that the ADC and analog optical modulator prior art combination can otherwise operate.

Abstract: Provided is a substrate-type optical waveguide, having a phase modulation function, (i) in which a reflection of a signal to be inputted via a coplanar line is restrained and (ii) which consumes less power. In a case where the substrate-type optical waveguide is partitioned into a plurality of sections by cross sections orthogonal to a direction in which light propagates through a core, a local capacitance in each of the plurality of sections gradually increases as a distance from an entrance end surface increases.

Abstract: An optical modulator circuit includes first and second electrodes, first and second p-n junction segments (PNJSs), and first and second optical waveguides. The first PNJS includes a first modulating p-n junction (MPNJ) in series with a first non-modulating device (NMD) that are connected to the first and second electrodes, respectively, where the first NMD includes a first substantially larger capacitance than the first MPNJ. The second PNJS includes a second NMD in series with a second MPNJ that are connected to the first and second electrodes, respectively, where the second NMD includes a second substantially larger capacitance than the second MPNJ. The first and second optical waveguides superimpose the first and second MPNJs, respectively, where the first and second MPNJs are configured to modulate a refractive index of the first and second optical waveguides, respectively, based on the substantially larger capacitance of the first NMD and the second NMD.

Abstract: A controllable opto-electronic time stretcher comprising a first wave guide and a second waveguide coupled to the first waveguide along a coupling portion; wherein at least one of the first and second waveguides in the coupling portion has a controllable refractive index.

Abstract: Systems and methods for reducing total skew in optical signals transmitted by optical coherent transponders without measuring the total skew are disclosed. The method may compensate for the in-phase/quadrature (I/Q) skew of optical signals in complex modulation formats. It may include providing input to a transponder to produce a periodic (and generally sinusoidal) output signal, providing the signal to an optical power meter, measuring the optical power of positive and negative harmonics of the signal while varying the amount of skew introduced by a de-skewing filter in the transponder, identifying the amount of skew introduced by the de-skewing filter when the minimum optical power measurement is taken, and causing the amount of skew introduced by the de-skewing filter to equal the identified skew offset by a one-half symbol delay. The system may provide better skew compensation using less expensive equipment than de-skewing methods based on existing skew measurement methods.

Abstract: Systems and methods for detecting and correcting bias errors in optical coherent transponders are disclosed. An “outer” modulator in a transponder may, when properly biased, produce a phase offset of ?/2 radians between in-phase and quadrature components of the optical signals transmitted in optical modulation formats by the transponder. The method may include providing input to a transponder to produce a periodic (and generally sinusoidal) output signal, measuring (using an optical power meter) the optical power of positive and negative harmonics of the signal while varying the amount of skew introduced by a de-skewing filter in the transponder, and determining that a curve representing the measurements performed on the positive harmonics and a curve representing the measurements performed on the negative harmonics are not orthogonal. The method may include adjusting the bias voltage of the modulator to make the two curves orthogonal, thus eliminating the bias error.

Abstract: Disclosed herein is a traveling-wave Mach-Zehnder modulator and method of operating same that advantageously exhibits a reduced optical insertion loss as compared with contemporary Mach-Zehnder structures. Such advantage comes at the modest expense of increased modulator length and increased RF loss.

Abstract: A stabilized integrated optical circuit is presented. The stabilized integrated optical circuit includes at least one integrated optical chip formed from at least one inorganic material, a stabilizing-polarizable-fill gas, and an enclosure enclosing the at least one integrated optical chip and the stabilizing-polarizable-fill gas. At least one surface of the at least one integrated optical chip is modified by a treatment with at least one treatment gas selected to stabilize defects on the at least one surface. The stabilizing-polarizable-fill gas includes N2O and at least one polarizable material.

Abstract: An electro-absorption modulator, comprising: a substrate layer, including a silicon substrate and an oxide layer disposed on the silicon substrate; top-layer silicon, formed on the oxide layer, where a waveguide layer is formed on the top-layer silicon; a doping layer, including a first doping panel and a second doping panel, where a first-type light doping area is formed on the first doping panel, a second-type light doping area is formed on the second doping panel; and a modulation layer, disposed on the waveguide layer and connected in parallel to the PIN junction. For an incident beam with a specific wavelength, when a modulating electrical signal is reversely applied to the PIN junction, a light absorption coefficient of the modulation layer for the beam changes with the modulating electrical signal, and after the beam passes through a modulation area, optical power of the beam changes.

Abstract: An electro-optic device 200 comprising a substrate in which first and second waveguides 202, 203 are formed. The device also comprises first and second electrodes 204, 205 comprising an optically transparent conductive material and including primary portions 204a, 205a overlying the first and second waveguides 202, 203 for electrically biasing the first and second waveguides. The device is configured such that one of the first and second electrodes includes one other portion 204b, 205b arranged alongside the primary portion 204a, 205a of the other of the first and second electrodes. This arrangement improves the electro-optic efficiency of the device without the need for a buffer layer in the electrodes.

Abstract: A photonic integrated circuit is presented that includes a substrate, and a first and second waveguide patterned on the substrate. The first waveguide guides an input beam of radiation. The photonic integrated circuit also includes a coupling region, wherein the first and second waveguides each pass through the coupling region. One or more modulating elements are coupled to each of the first and second waveguides. The first waveguide and the second waveguide have a first facet and a second facet, respectively, and first and second reflections are generated at the first and second facets within the first and second waveguides, respectively. The one or more modulating elements coupled to each of the first and second waveguides are designed to adjust the phase of the first and second reflections before the first and second reflections pass through the coupling region.

Abstract: An optical source is described. This optical source includes a semiconductor optical amplifier, with a semiconductor other than silicon, which provides a gain medium. In addition, a photonic chip, optically coupled to the semiconductor optical amplifier, includes: an optical waveguide that conveys the optical signal; and a pair of ring-resonator modulators that modulate the optical signal. Furthermore, the pair of ring-resonator modulators is included within an optical cavity in the optical source. For example, the optical cavity may be defined by a reflective coating on one edge of the semiconductor optical amplifier and a reflector on one end of the optical waveguide. Alternatively, the optical cavity may be defined by reflectors on ends of the optical waveguide.

Abstract: An optical modulator includes a modulating unit, an optical fiber, and a combining unit. The modulating unit outputs first and second optical beams with the electric signal superimposed thereon in a first direction. The optical fiber is placed along a second direction perpendicular to the first direction. The combining unit combines the first and second optical beams output by the modulating unit and outputs an optical beam obtained by the first and second optical beams being combined to the optical fiber. The combining unit includes a polarized light rotating element and a polarized light combining element. The polarized light rotating element rotates the polarization direction of the first optical beam. The polarized light combining element reflects the first optical beam of which the polarization direction has been rotated and the second optical beam in the second direction, and combines the first and second optical beams reflected in the second direction.

Abstract: A novel phase shifter design for carrier depletion based silicon modulators, based on an experimentally validated model, is described. It is believed that the heretofore neglected effect of incomplete ionization will have a significant impact on ultra-responsive phase shifters. A low V?L product of 0.3 V·cm associated with a low propagation loss of 20 dB/cm is expected to be observed. The phase shifter is based on overlapping implantation steps, where the doses and energies are carefully chosen to utilize counter-doping to produce an S-shaped junction. This junction has a particularly attractive V?L figure of merit, while simultaneously achieving attractively low capacitance and optical loss. This improvement will enable significantly smaller Mach-Zehnder modulators to be constructed that nonetheless would have low drive voltages, with substantial decreases in insertion loss. The described fabrication process is of minimal complexity; in particular, no high-resolution lithographic step is required.

Abstract: An optical module includes: a substrate; a first terminal; a plurality of second terminals; a plurality of third terminals; and a plurality of wirings. The plurality of second terminals are on the substrate. The plurality of third terminals are disposed closer to an electrode than the plurality of second terminals on the substrate. The plurality of wirings extend from the plurality of second terminals through a side opposite to the first terminal and reach the electrode.

Abstract: A nanocomposite optical modulator device comprising an optically transparent electro-optic region. The electro-optic region exhibiting second-order optical nonlinearity properties. The nanocomposite optical modulator further comprises one or more dielectric layers, with at least one of the dielectric in contact with the electro-optic region, one or more electrodes in proximity to the electro-optic region. Wherein at least one of the aforementioned elements is nanocomposite material with nanoparticle loading from about 0.25% to about 70% volume.

Abstract: Electro-optical modulators and methods of fabrication are disclosed. An electro-optical modulator includes a Mach-Zehnder interferometer formed in a substrate removed semiconductor layer and a coplanar waveguide. Signals from the coplanar waveguide are capacitively coupled to the Mach-Zehnder interferometer through first and second dielectric layers having strong dielectric constant dispersion.

Abstract: CMOS compatible SOI photonic integrated circuits (PICs) offer a low cost and promising solution to future short reach optical links operating beyond 100 Gb/s. A key building block in these optical links is the external optical modulator. Amongst, the PIC geometries for external modulators are those based upon ring resonators and Mach-Zehnder interferometers (MZI) where while the latter have been reported with increased thermal stability and fabrication tolerances, the former have demonstrated lower loss and lower driving voltages leading to a more energy efficient approach. Multi-segmented electrode structure based PAM optical modulator can potentially replace the analog digital-to-analog circuits (DACs) which are commonly used to achieve the multilevel electrical driving signal. Accordingly, it would be beneficial to combine the benefits of ring resonators to provide PAM-N modulators.