Abstract: The present disclosure provides a semiconductor device, a photonic circuit, and a method for adjusting a resonant wavelength of an optical modulator. The semiconductor device includes a substrate, a first waveguide disposed on the substrate, and a second waveguide disposed on the substrate and spaced apart from the first waveguide with a first distance. In addition, the second waveguide includes a first electrical coupling portion having a first type doping, a second electrical coupling portion having a second type doping, and an optical coupling portion disposed between the first electrical coupling portion and the second electrical coupling portion, wherein the second waveguide is configured to receive a first voltage through the first electrical coupling portion and the second electrical coupling portion to decrease a resonant wavelength of the second waveguide.

Abstract: Structures including an electro-optical phase shifter and methods of fabricating a structure including an electro-optical phase shifter. The structure includes a waveguide core on a semiconductor substrate, and an interconnect structure over the waveguide core and the semiconductor substrate. The waveguide core includes a phase shifter, and the interconnect structure includes a slotted shield and a transmission line coupled to the phase shifter. The slotted shield includes segments that are separated by slots. The slotted shield is positioned between the transmission line and the substrate.

Abstract: Embodiments described herein provide a waveguide for transmitting electromagnetic radiation. The waveguide comprising a core region, a cladding region extending around the core region; and a first layer of a material having a thickness of less than a skin depth of the material for electromagnetic radiation of a first wavelength; wherein the first layer is configured with a periodic refractive index and positioned within the waveguide such that a first surface polariton wave is excited at an interface between the core region and cladding region when electromagnetic radiation of the first wavelength is transmitted through the core region. There is also provided a method of manufacture of the waveguide.

Abstract: A semiconductor structure includes a semiconductor substrate, a semiconductor device and a heating structure. The semiconductor substrate includes a device region and a heating region surrounding the device region. The semiconductor device is located on the device region. The heating structure is located on the heating region and includes an intrinsic semiconductor area, at least one heating element and at least one heating pad. The intrinsic semiconductor area is surrounding the semiconductor device. The at least one heating element is located at a periphery of the intrinsic semiconductor area. The at least one heating pad is joined with the at least one heating element, wherein the at least one heating pad includes a plurality of contact structures, and a voltage is supplied from the plurality of contact structures to control a temperature of the at least one heating element.

Abstract: A silicon photonics-based optical modulator is disclosed. The optical modulator includes first radio frequency (RF) metal electrodes that operate as a ground, phase shifters disposed between the first RF metal electrodes for optically modulating an optical signal transmitted along an optical waveguide, second RF metal electrodes disposed between the phase shifters for providing an RF electrical signal received from a driving driver located outside of the optical modulator through one end, resistor-inductors (RL) connected to another end of the second RF metal electrodes, an inductive line disposed between the RLs and a power supply for applying a bias voltage to the optical modulator and the driving driver, and a silicon capacitor disposed between the RLs and the power supply for preventing a degradation of an RF response characteristic of the silicon photonics-based optical modulator caused by the inductive line.

Abstract: A resonator modulator for modulating light in a photonic circuit, the modulator comprising: a capacitor formed of a ring-shaped insulating region sandwiched between an outer conductive region and an inner conductive region, wherein at least one of the outer conductive regions or the inner conductive regions is a polycrystalline semiconductor material.

Abstract: High bandwidth (e.g., >100 GHz) modulators and methods of fabricating such are provided. An optical modulator comprises transmission lines configured to provide a respective radio frequency signal to a respective plurality of segmented capacitive loading electrodes; pluralities of segmented capacitive loading electrodes in electrical communication with a respective one of the transmission lines and in electrical communication with an interface layer of a semiconductor waveguide structure; and the semiconductor waveguide structure. The semiconductor waveguide structure is configured to modulate an optical signal propagating therethrough based at least in part on the respective radio frequency signal. The semiconductor waveguide structure comprises the interface layer, which (a) comprises a semiconductor material and (b) is configured such that an interface resistance of the modulator is ?4 Ohms.

Abstract: An optical switch structure includes at least one optical input port and at least one optical output port. The optical switch structure also includes an optical waveguide structure including a waveguide core and a waveguide cladding The optical waveguide structure is optically coupled to the at least one optical input port and the at least one optical output port. The waveguide core includes a first material characterized by a first index of refraction and a first electro-optic coefficient and the waveguide cladding includes a second material characterized by a second index of refraction less than the first index of refraction and a second electro-optic coefficient greater than the first electro-optic coefficient.

Abstract: A method of terminating an optical fiber having an inner core with a fiber optic connector including a ferrule having a micro-bore and an end face with a mating location is disclosed. The method includes determining a bore bearing angle of a bore offset of the micro-bore in the ferrule; determining a core bearing angle of a core offset of the inner core in the optical fiber; orienting the ferrule and the optical fiber relative to each other to minimize the distance between the inner core and the mating location; heating the ferrule to an processing temperature above room temperature; and coupling the optical fiber to the micro-bore of the ferrule. The size of the micro-bores and optical fibers may be selected to maximize the number of interference fits in a population of ferrules and optical fibers while minimizing failed fittings between the ferrules and optical fibers in the populations.

Abstract: An electro-optical phase modulator includes a waveguide made from a stack of strips. The stack includes a first strip made of a doped semiconductor material of a first conductivity type, a second strip made of a conductive material or of a doped semiconductor material of a second conductivity type, and a third strip made of a doped semiconductor material of the first conductivity type. The second strip is separated from the first strip by a first interface layer made of a dielectric material, and the third strip is separated from the second strip by a second interface layer made of a dielectric material.

Abstract: A wavelength conversion optical element using a nonlinear optical effect of a device structure in which wavelength conversion efficiency rises as targeted when the length of a waveguide is increased is provided. The element adopts a waveguide structure using lithium niobate of a second-order nonlinear optical material. Wavelength conversion regions are formed to correspond to two linear waveguides extending in parallel to each other on a plane of the planar structure and correspond to the lengths of the two linear waveguides. One end side of the linear waveguide is an incident side of excitation light and one end side of the linear waveguide is an emission side of wavelength converted light. The linear waveguides excluding the incident side and the emission side are joined by a bent waveguide.

Abstract: A functional element housing package includes a pin terminal disposed in an outer region of a housing for housing a functional element. A wiring substrate is connected with the pin terminal. The wiring substrate includes a through hole for receiving the pin terminal, a first metallic layer disposed around an opening of the through hole on a side of the wiring substrate which side is located close to the housing, a second metallic layer disposed around an opening of the through hole on a side of the wiring substrate which is opposed to the side located close to the housing, the second metallic layer being greater in area than the first metallic layer, a connection wiring line connected to the first metallic layer or the second metallic layer, and a solder which connects the pin terminal to each of the first metallic layer and the second metallic layer.

Abstract: A super-resolution digital tomosynthesis system for imaging an object including a source configured to emit penetrating particles toward an object; a detector configured to acquire a series of projection images of the object in response to the penetrating particles from the source; positioning apparatus configured to position the source and the detector; and an imaging system coupled to the source, the detector, and the positioning apparatus. The imaging system is configured to control the positioning apparatus to position the source in relation to the detector along a scan path and to change a distance between the source and the detector, control the source and the detector to acquire the series of projection images along the scan path with the distance change between the source and detector, and construct a tomographic volume exhibiting super-resolution from data representing the acquired series of projection images.

Abstract: Aspects of the present disclosure are directed to process flow to fabricate a waveguide structure with a silicon nitride core having atomic-level smooth sidewalls achieved by wet etching instead of the conventional dry etching process. A mask is pre-biased to account for lateral etching during the wet-etching steps.

Abstract: A first transmission line comprises a first pair of electrodes receiving an electrical drive comprising first and second drive signals, which are loaded by a first series of p-n junctions applying optical phase modulation to respective optical waves propagating over a first section of the first and second optical waveguide arms of an MZI. A second transmission line comprises a second pair of electrodes configured to receive the electrical drive after an electrical signal delay. The second pair of electrodes are loaded by a second series of p-n junctions applying optical phase modulation to the respective optical waves propagating over a second section of the first and second optical waveguide arms after propagation over the first section. An electrode extension structure provides the electrical drive to the second pair of electrodes, and comprises an unloaded transmission line portion imposing the electrical signal delay based on an optical signal delay.

Abstract: An integrated fan-out package includes a first redistribution structure, a die, an insulation encapsulation, and at least one first through interlayer via. The first redistribution structure includes a dielectric layer, a feed line at least partially disposed on the dielectric layer and a signal enhancement layer covering the feed line, wherein the signal enhancement layer has a lower dissipation factor (Df) and/or a lower permittivity (Dk) than the dielectric layer. The die is disposed on the first redistribution structure. The insulation encapsulation encapsulates the die. The at least one first TIV is embedded in the insulation encapsulation and the signal enhancement layer.

Abstract: Examples described herein relate to an optical device, such as, a ring resonator, that includes a ring waveguide. The ring resonator includes a ring waveguide to allow passage of light therethrough. Further, the ring resonator includes a modulator formed along a first section of the circumference of the ring waveguide to modulate the light inside the ring waveguide based on an application of a first reverse bias voltage to the modulator. Moreover, the ring resonator includes an avalanche photodiode (APD) isolated from the modulator and formed along a second section of the circumference of the ring waveguide to detect the intensity of the light inside the ring waveguide based on an application of a second reverse bias voltage to the APD. The second section is shorter than the first section, and the second reverse bias voltage is higher than the first reverse bias voltage.

Abstract: A multilayer film includes a single-crystal silicon layer, a first layer containing Zr, a second layer containing ZrO2, and a third layer containing a perovskite oxide having an electrooptic effect. The first layer, the second layer, and the third layer are provided in this order above the single-crystal silicon layer, and the multilayer film is transparent to a wavelength to be used.

Abstract: A method of forming a semiconductor structure is provided. A first inter-level dielectric (ILD) layer is formed overlying a molding layer. The first ILD layer is patterned to form a plurality of first openings. A first lower transmitter electrode and a first lower receiver electrode are formed by depositing a first metal material within the plurality of first openings. A first dielectric waveguide is formed overlying the first ILD layer, the first lower transmitter electrode and the first lower receiver electrode. A second ILD layer is formed overlying the first dielectric waveguide and includes a plurality of second openings. A second lower transmitter electrode and a second lower receiver electrode are formed by depositing a second metal material within the plurality of second openings. A second dielectric waveguide is formed overlying the second ILD layer, the second lower transmitter electrode and the second lower receiver electrode.

Abstract: Embodiments provide for an optical modulator that includes a first silicon region, a polycrystalline silicon region; a gate oxide region joining the first silicon region to a first side of the polycrystalline region; and a second silicon region formed on a second side of the polycrystalline silicon region opposite to the first side, thereby defining an active region of an optical modulator between the first silicon region, the polycrystalline region, the gate oxide region, and the second silicon region. The polycrystalline silicon region may be between 0 and 60 nanometers thick, and may be formed or patterned to the desired thickness. The second silicon region may be epitaxially grown from the polycrystalline silicon region and patterned into a desired cross sectional shape separately from or in combination with the polycrystalline silicon region.

Abstract: An optical modulator includes an optical modulation element including an optical waveguide formed on a substrate and a housing that accommodates the optical modulation element, the housing has a bottom surface wall having a quadrilateral shape in a plan view, first and second long side walls that are connected to two opposite edges of the bottom surface wall, and first and second short side walls that are shorter than the first and second long side walls and are connected to two other opposite edges of the bottom surface wall. An average wall thickness of the second long side wall is equal to or larger than an average wall thickness of the first long side wall. At least one of the first and second short side walls has an average thickness that is thinner than the average thickness of the first long side wall.

Abstract: Described herein are methods, systems, and apparatuses to utilize an electro-optic modulator including one or more heating elements. The modulator can utilize one or more heating elements to control an absorption or phase shift of the modulated optical signal. At least the active region of the modulator and the one or more heating elements of the modulator are included in a thermal isolation region comprising a low thermal conductivity to thermally isolate the active region and the one or more heating elements from a substrate of the PIC.

Abstract: The present disclosure relates to a single OPA (optical phased array) device including a light source; a waveguide which extends from the light source to allow light incident from the light source to pass through; a plurality of modulators which is disposed in the waveguide to modulate a phase of light in the waveguide; a two-dimensional material layer which passes or absorbs light incident from the light source; and an electrode which supplies charges to the two-dimensional material layer, in which the light incident from the light source passes through the two-dimensional material layer, the waveguide, and the modulator and is reflected by an external target of the single OPA device to pass through the modulator and the waveguide, and then absorbed by the two-dimensional material layer.

Abstract: A bias control method of a nested optical modulator includes detecting a frequency component that has a frequency equal to a frequency of a dither signal and that is included in an output of the optical modulator, with changing a voltage value of a first bias, to measure a first error-detection value, obtaining a first error-detection curve representing a relationship between the first error-detection value and the voltage of the first bias, obtaining a first correction value based on the first error-detection curve, and obtaining the first error-detection value obtained when the first bias voltage value is equal to a voltage value obtained by adding the first correction value to the first bias voltage value at a zero-crossing point of the first error-detection curve, as a first error control value. The first bias is controlled so that the first error-detection value is the first error control value.

Abstract: An optical modulator carrier assembly includes a optical modulator, a transmission line substrate, a first via, a second via and a wire having an inductor component provided on a second surface of the transmission line substrate, and electrically connecting between the another end of the first via and the another end of the second via. The one end of the first via, the cathode electrode pad, the terminating resistor, the one end of the second via are arranged on the in this order.

Abstract: Integrated wavelength selectors are described. The wavelength selector may include silicon nitride ring resonator disposed vertically between a heater and a temperature sensor. The temperature sensor may be formed of silicon in some embodiments. The wavelength selector may be coupled to the output port of a tunable laser, or may be disposed within a laser cavity.

Abstract: Structures for an edge coupler and methods of fabricating a structure for an edge coupler. A first waveguide core has a first section that has a tapered shape and a second section that is adjoined to the first section. Multiple segments are positioned with a spaced arrangement adjacent to an end surface of the second section of the first waveguide core. A slab layer is adjoined to the first section of the first waveguide core. A second waveguide core has a section that overlaps with the first section of the first waveguide core to define a layer stack. The section of the second waveguide core has a tapered shape, and the first and second waveguide cores are comprised of different materials. The first section of the first waveguide core has a first thickness, and the slab layer has a second thickness that is less than the first thickness.

Abstract: In one embodiment, an intensity modulated (IM) direct detection (DD) optical receiver using a photonic integrated circuit (PIC) with an array of semiconductor optical amplifiers (SOAs) for flexible chromatic dispersion compensation (CDC) is provided. The PIC comprises an 1:N optical splitter to split an input optical signal into N copies; an array of N semiconductor optical amplifiers (SOAs) to receive the N optical outputs from the optical splitter; an array of optical delay lines to receive the outputs from the N SOAs, wherein the delay coefficients for the array of optical delay lines are {0, T, 2T, . . . (N?1) T}, where T=½B, where B is the system symbol rate, and each optical path with odd index (1, 3, 5, . . . N?1) from the N optical paths includes a 90-degree phase-shifter; and an optical N:1 coupler to re-combine all N optical paths. A method for automatically controlling a PIC based on the feedback signal from the Rx DSP in an optical receiver is also provided.

Abstract: A light pulse source and method for generating repetitive optical pulses are described. The light pulse source includes a continuous wave cw laser device, an optical waveguide optically coupled with the laser device, an optical microresonator, and a tuning device. The optical microresonator coupling cw laser light via the waveguide into the microresonator, which, may include, a light field in a soliton state with soliton shaped pulses coupled out of the microresonator for providing the repetitive optical pulses. The laser device includes a chip based semiconductor laser, the microresonator and/or the waveguide may reflect an optical feedback portion of light back to the semiconductor laser, which may provide self-injection locking relative to a resonance frequency of the microresonator. The tuning device is arranged for tuning at least one of a driving current and a temperature of the semiconductor laser such that the microresonator may provide the soliton state.

Abstract: A terahertz device includes a first waveguide, which is a plasmonic waveguide, having a first core with a nonlinear material, such as a ferroelectric material, and having a cladding with a first cladding portion including, at a first interface with the first core, a first cladding material that is an electrically conductive material. The terahertz device can include an antenna having a first and a second arm (for receiving or for emitting or for both, receiving and emitting electromagnetic waves in the terahertz range); a first and a second electrode arranged close to the first waveguide.

Abstract: A velocity mismatch between optical signals and microwave electrical signals in electro-optic devices, such as modulators, may be compensated by utilizing different lengths of bends in the optical waveguides as compared to the microwave electrodes to match the velocity of the microwave signal propagating along the coplanar waveguide to the velocity of the optical signal. To ensure the electrode bends do not affect the light in the optical waveguide bends, the electrode may have to be rerouted, e.g. above or below, the optical waveguide layer. To ensure that the pair of optical waveguides have the same optical length, a waveguide crossing may be used to cross the first waveguide through the second waveguide.

Abstract: The present disclosure provides an optical waveguide design of a fiber modified with a thin layer of epsilon-near-zero (ENZ) material. The design results in an excitation of a highly confined waveguide mode in the fiber near the wavelength where permittivity of thin layer approaches zero. Due to the high field confinement within thin layer, the ENZ mode can be characterized by a peak in modal loss of the hybrid waveguide. Results show that such in-fiber excitation of ENZ mode is due to the coupling of the guided fundamental core mode to the thin-film ENZ mode. The phase matching wavelength, where the coupling takes place, varies depending on the refractive index of the constituents. These ENZ nanostructured optical fibers have many potential applications, for example, in ENZ nonlinear and magneto-optics, as in-fiber wavelength-dependent filters, and as subwavelength fluid channel for optical and bio-photonic sensing.

Abstract: Various embodiments of a micro-disc modulator as well as a silicon photonic device and an optoelectronic communication apparatus using the micro-disc modulator are described. In one aspect, a device includes a SOI substrate and a silicon photonic structure formed on a primary surface of the SOI substrate. The semiconductor substrate includes a silicon waveguide and a micro-disc modulator. The micro-disc modulator is adjacent to the silicon waveguide and has a top surface substantially parallel to the primary surface of the SOI substrate. The top surface of the micro-disc modulator includes one or more discontinuities therein. The micro-disc modulator may be a multi junction micro-disc modulator having two vertical p-n junctions with a single resonance frequency to achieve high-speed modulation and low-power consumption.

Abstract: An optical waveguide element including a substrate, an optical waveguide formed on the substrate, and an electrode for controlling a light wave propagating through the optical waveguide, in which the optical waveguide and the electrode have an intersection in which the optical waveguide and the electrode intersect with each other, and at the intersection, the electrode has a multilayer structure including a plurality of metal layers made of a metal material, and a resin layer made of a resin material is formed between the electrode and the substrate.

Abstract: A thin film polymer device including a waveguide core surrounded by dielectric material positioned on a platform. The core has a passive input portion and a passive output portion joined by a necked down active portion. A layer of EO polymer material positioned on the dielectric material overlying the active portion of the core and the core, the EO polymer, and the dielectric material all having refractive indices with the refractive index of the EO polymer being higher than the refractive index of the dielectric material. Light progressing through the core from the passive input portion to the passive output portion transitions to the layer of EO polymer material as it enters the necked down active portion and transitions back to the core as it leaves the necked down active portion.

Abstract: Electro-optic devices for classical and quantum microwave photonics are provided. In various embodiments, a device comprises: a waveguide; a first ring resonator; a second ring resonator, the second ring resonator evanescently coupled to the first ring resonator and to the waveguide; a first pair of electrodes, one of the first pair of electrodes disposed within the first ring resonator and the other of the first pair of electrodes disposed without the first ring resonator; a second pair of electrodes, one of the second pair of electrodes disposed within the second ring resonator and the other of the second pair of electrodes disposed without the second ring resonator; a microwave source electrically coupled to the first and second pairs of electrodes; a bias port electrically coupled to the first and second pairs of electrodes and configured to sweep a frequency band.

Abstract: A TORminator module is disposed with a switch linecard of a rack. The TORminator module receives downlink electrical data signals from a rack switch. The TORminator module translates the downlink electrical data signals into downlink optical data signals. The TORminator module transmits multiple subsets of the downlink optical data signals through optical fibers to respective SmartDistributor modules disposed in respective racks. Each SmartDistributor module receives multiple downlink optical data signals through a single optical fiber from the TORminator module. The SmartDistributor module demultiplexes the multiple downlink optical data signals and distributes them to respective servers. The SmartDistributor module receives multiple uplink optical data signals from multiple servers and multiplexes them onto a single optical fiber for transmission to the TORminator module.

Abstract: There is described an RF waveguide array. The array comprises a substrate comprising a plurality of optical waveguides, each waveguide being elongate in a first direction. An electrical RF transmission line array is located on a face of the substrate and comprises a plurality of signal electrodes and a plurality of ground electrodes, each electrode extending in the first direction. Each signal electrode is positioned to provide a signal to two respective waveguides. The ground electrodes include at least one intermediate ground electrode positioned between each pair of signal electrodes. Each intermediate ground electrode includes a portion extending into the substrate.

Abstract: An optical modulator according to the present invention comprises: a substrate which has electro-optic effects; an optical waveguide which is provided in the substrate; an optical fiber which is bonded to an end of the optical waveguide; a fixation member which is provided on an end part of the optical fiber; and an optical adhesive layer which bonds the optical fiber and the substrate to each other. The end of the optical waveguide is arranged in an end face of the substrate; the optical adhesive layer optically couples an end face of the optical fiber and an end of the optical waveguide with each other, while bonding the optical fiber, the fixation member and the substrate with each other; and the surface roughness of a surface of the fixation member, wherein the surface faces the end face of the substrate, is different from the surface roughness of an end face of the substrate, wherein the end face faces the surface of the fixation member.

Abstract: A Dual-polarization optical modulator that can be used to modulate light in both polarization states, in which the operating points of each polarization state can be set at any arbitrary point independently from each other. A novel architecture for an optically-controlled Phased-array beam forming system utilizing this unique dual-polarization is proposed to facilitate simple and practical implementation.

Abstract: An electrical-optical modulator may include one or more optical waveguides to propagate one or more optical signals in a direction of propagation. An optical waveguide of the one or more optical waveguides may include a time delay section, a first modulation section preceding the time delay section in the direction of propagation, and a second modulation section following the time delay section in the direction of propagation. The first modulation section and the second modulation section may be configured to be associated with opposite modulation polarities, and the time delay section may be configured to delay a phase of the one more optical signals relative to the first modulation section. The electrical-optical modulator may include one or more signal electrodes to propagate one or more signals in the direction of propagation in order to modulate the one or more optical signals through electrical-optical interaction.

Abstract: Provided is an optical modulator having an optical modulation high frequency line through which a high frequency electrical signal can be efficiently input to an optical modulation region and which is in a broadband. High frequency lines of an optical modulator, that is, an input high frequency line, an optical modulation high frequency line, and an output high frequency line have a line configuration in which each of the input high frequency line and the output high frequency line is divided into a plurality of segments, and adjacent segments of the plurality of the segments have different characteristic impedances and propagation constants. The input high frequency line and the output high frequency line may be implemented by changing a width or a thickness of a signal electrode formed on a dielectric forming a micro-strip line between adjacent segments.

Abstract: An optical modulator includes a waveguide formed of a semiconductor and configured to allow light to propagate therethrough; a first electrode disposed on the waveguide and electrically connected to the waveguide; and a second electrode separated from the waveguide and electrically connected to the waveguide. An edge of the second electrode on a light entry side is located downstream of an edge of the first electrode on the light entry side in a propagation direction of the light.

Abstract: An optical device includes: a substrate; an optical waveguide that forms a Mach-Zehnder interferometer; a signal electrode; and a ground electrode. The optical waveguide is placed between the signal electrode and the ground electrode. An electric field is generated in a direction along a surface of the substrate when a voltage is applied between the signal electrode and the ground electrode. The optical waveguide includes a first waveguide through which input light propagates, a curved waveguide which is optically coupled to the first waveguide, and a second waveguide which is optically coupled to the curved waveguide. The signal electrode includes first and second electrodes that are respectively placed near the first and second waveguides. An electric signal is supplied to the first electrode, and an inverted electric signal is supplied to the second electrode.

Abstract: An optical device is formed on an optical IC chip. The shape of the optical IC chip is rectangular or parallelogram. The optical device induces: an optical device circuit; a first optical waveguide that is coupled to the optical device circuit; a pad that is electrically connected to the optical device circuit; a grating coupler; and a second optical waveguide that is coupled to the grating coupler. The pad is formed in a region close to a first side of the optical IC chip. The grating coupler is formed in a specified region, which is not close to the first side, on the optical IC chip. The first optical waveguide and the second optical waveguide are respectively extended to an edge of the optical IC chip.

Abstract: A second substrate is formed on a first substrate. The second substrate includes a Mach-Zehnder modulation unit and a coplanar line. Further, the second substrate is formed on and bonded to the first substrate via an adhesive layer made of a non-conductive adhesive. The Mach-Zehnder modulation unit has an optical modulation region by an electro-optic effect. The coplanar line transmits a modulated signal to the optical modulation region.

Abstract: In an embodiment, a method and apparatus for increasing bandwidth of an optical modulator by applying a first voltage applied to a beginning of a resistive line and applying a second voltage applied to an end of the resistive line; wherein the first voltage is less than the second voltage.

Abstract: An optical phase shifter and a method of making the same are disclosed. The phase shifter includes a substrate, a p-doped electrode and an n-doped electrode on the substrate, a first doped semiconductor layer on the p-doped electrode or the n-doped electrode and in electrical contact with the other electrode, a second doped semiconductor layer on the first doped semiconductor layer, a first vertical region electrically connecting the second doped semiconductor layer with the one electrode, and a cladding layer on or over the second semiconductor layer, the first vertical region, and at least a first sidewall of each of the first and second semiconductor layers. The p-doped electrode and the n-doped electrode form a p-n junction at an interface therebetween. The first and second doped semiconductor layers have the same doping type as the other electrode and the one electrode, respectively.

Abstract: A semiconductor device includes: a semiconductor layer formed on a substrate; a first resin layer formed on the semiconductor layer; a second resin layer formed on the first resin layer; a first wiring layer that is formed on the semiconductor layer and is buried in the second resin layer; a second wiring layer that is formed on the second resin layer and the first wiring layer, and is electrically connected to the first wiring layer; and a first inorganic insulating film covering the second resin layer and the second wiring layer, wherein an area of the first wiring layer is larger than an area of the second wiring layer.

Abstract: An integrated fan-out package includes a first redistribution structure, a die, an insulation encapsulation, and at least one first through interlayer via. The first redistribution structure includes a dielectric layer, a feed line at least partially disposed on the dielectric layer and a signal enhancement layer covering the feed line, wherein the signal enhancement layer has a lower dissipation factor (Df) and/or a lower permittivity (Dk) than the dielectric layer. The die is disposed on the first redistribution structure. The insulation encapsulation encapsulates the die. The at least one first TIV is embedded in the insulation encapsulation and the signal enhancement layer.