Abstract: Optical modulators are described having a Mach-Zehnder interferometer and a pair of RF electrodes interfaced with the Mach-Zehnder interferometer in which the Mach-Zehnder interferometer comprises optical waveguides formed from semiconductor material. The optical modulator also comprises a ground plane spaced away in a distinct plane from transmission line electrodes formed from the association of the pair of RF electrodes interfaced with the Mach-Zehnder interferometer. The ground plane can be associated with a submount in which an optical chip comprising the Mach-Zehnder interferometer and the pair of RF electrodes is mounted on the submount with the two semiconductor optical waveguides are oriented toward the submount. Methods for forming the modulators are described.

Abstract: A segmented optical modulator includes two optical modulator segments located along a main face of a photonic chip, and two RF transmission lines connected to drive a corresponding one of the two optical modulator segments. A signal electrode of one of the transmission lines includes a segment that is vertically capacitively coupled to a plurality of spaced ground-connected metallic elements disposed in sequence along a length of the segment above or below thereof so as to be capacitively coupled thereto.

Abstract: Methods and apparatuses for downconverting high frequency subbands to a lower frequency band and recovering signals-of-interest. The system includes a controller, a signal generator, an optical source, a dual-drive mach zehnder modulator (DDMZM), a photodetector, and a dechipping/image (DI) rejector. The controller outputs chipping frequencies to the signal generator which generates local oscillator (LO) tones shifted by the respective chipping frequencies. The optical source outputs an optical signal to the DDMZM which has first and second arms and modulators. The first modulator receives a signal from a source and modulates it onto the optical signal propagating through the first arm to form a first modulated optical signal. The second modulator receives the shifted local oscillator tones and modulates them onto the optical signal propagating through the second arm to form a second modulated optical signal.

Abstract: An optical modulator includes a carrier and a waveguide disposed on the carrier. The waveguide includes a first optical coupling region, a second optical coupling region, first regions, and second regions. The first optical coupling region is doped with first dopants. The second optical coupling region abuts the first optical coupling region and is doped with second dopants. The first dopants and the second dopants are of different conductivity type. The first regions are doped with the first dopants and are arrange adjacent to the first optical coupling region. The first regions have respective increasing doping concentrations as distances of the first regions increase from the first optical coupling region. The second regions are doped with the second dopants and are arranged adjacent to the second optical coupling region. The second regions have respective increasing doping concentrations as distances of the second regions increase from the second optical coupling region.

Abstract: Phase modulation electrode lines of a semiconductor Mach-Zehnder optical modulator are formed along waveguides. Output-side lead lines are bent in a direction crossing the extending direction of the waveguides in the plane of a dielectric layer and are connected to terminal resistors. The output-side lead lines are formed in a predetermined width corresponding to a desired impedance and make the width narrower than the predetermined width only in the bent portions and portions where the output-side lead lines crosses the waveguides.

Abstract: An optical module includes: a Peltier module; an optical semiconductor element mounted on the Peltier module; and a driver that drives high-frequency lines of the optical semiconductor element. The optical semiconductor element includes: optical circuits providing a function of an optical interferometer and the high-frequency lines. Cooling performance of the Peltier module in a region in vicinity of the driver is higher than the cooling performance in other regions.

Abstract: Aspects of the subject disclosure may include, for example, obtaining data regarding passive intermodulation (PIM) detected in a received communication signal, and performing polarization adjusting for a communications system such that an impact of the PIM on the communications system is minimized. Other embodiments are disclosed.

Abstract: A semiconductor structure includes, an optical component and a thermal control mechanism. The optical component includes a first main path that splits into a first side path and a second side path so that the first side path and the second side path are separated from one another. The thermal control mechanism configured to control a temperature of both the first side path and the second side path, wherein the first thermal control mechanism includes a first thermoelectric member and a second thermoelectric member that are positioned between the first side path and the second side path and the first thermoelectric member and the second thermoelectric member have opposite conductive types.

Abstract: A composite substrate for an electro-optic element is disclosed. The composite substrate includes: an electro-optic crystal substrate having an electro-optic effect; a low-refractive-index layer being in contact with the electro-optic crystal substrate and having a lower refractive index than the electro-optical crystal substrate; and a support substrate bonded to the low-refractive-index layer at least via a bonding layer. A plurality of interfaces located between the low-refractive-index layer and the support substrate includes at least one rough interface having a roughness that is larger than a roughness of an interface between the electro-optic crystal substrate and the low-refractive-index layer.

Abstract: An optical transmission apparatus includes a first multilevel optical phase modulator and a first semiconductor optical amplifier. The first semiconductor optical amplifier includes a first active region having a first multiple quantum well structure. Assuming that a first number of layers of a plurality of first well layers is defined as n1 and a first length of the first active region is defined as L1 (?m): (a) n1=5 and 400?L1?563; (b) n1=6 and 336?L1?470; (c) n1=7 and 280?L1?432; (d) n1=8 and 252?L1?397; (e) n1=9 and 224?L1?351; or (f) n1=10 and 200?L1?297.

Abstract: Implementations disclosed herein provide for improving phase tuning efficiency of optical devices, such as a hybrid metal-on-semiconductor capacitor (MOSCAP) III-V/Si micro-ring laser. The present disclosure integrates silicon devices into a waveguide structural of the optical devices disclosed herein, for example, a waveguide resistor heater, a waveguide PIN diode, and waveguide PN diode. In some examples, the optical devices is a MOSCAP formed by a dielectric layer between two semiconductor layers, which provides for small phase tuning via plasma dispersion and/or carrier dispersion effect will occur depending on bias polarity. The plasma dispersion and/or carrier dispersion effect is enhanced according to implementations disclosed herein by heat, carrier injection, and/or additional plasma dispersion based on the silicon devices disclosed integrated into the waveguide.

Abstract: An optical waveguide structure forms an MZI in proximity to an electro-optic material. A first (second) electrical input port is configured to receive a first (second) drive signal. The second drive signal has a negative amplitude relative to the first drive signal. A first (second) transmission line is configured to propagate a first (second) electromagnetic wave over at least a portion of a first (second) optical waveguide arm to apply an optical phase modulation. A drive signal interconnection structure is configured to provide a first electrical connection between the first electrical input port and an electrode shared by the transmission lines, and a second electrical connection between the second electrical input port and respective electrodes of the transmission lines; and is configured to preserve relative phase shifts between the drive signals. Input impedances at the first and second electrical input ports are substantially equal to each other.

Abstract: A hybrid photonic chip comprising a plurality of semiconductor materials arranged to define a chip providing a function, wherein at least a first part of the chip is formed of materials which can be fabricated using a CMOS technique; and at least a second part of the chip which comprises non-linear crystal material and is not subjected to etching process; wherein the second part of the chip in conjunction with the first part is configured to support a propagating low loss single mode.

Abstract: An optical waveguide structure. In some embodiments, the optical waveguide structure includes a semiconductor waveguide having a waveguide ridge, and a heater. The waveguide ridge may have a varying dopant concentration across its cross-section. The heater may include a first contact and a second contact, and the waveguide structure may include a conductive path from the first contact to the second contact, the conductive path extending through a doped portion of the waveguide ridge.

Abstract: A phase shifter includes a substrate, waveguides and a wiring portion. The substrate includes optical waveguide regions and contact regions. Each contact region has contact portions. The waveguides are disposed at the substrate, and each of the waveguides accumulates carriers to modulate a phase of light for guiding propagation of the light. The wiring portion electrically connects each of the waveguides and each of the contact portions. Each of the contact portions connecting each of the waveguides to a corresponding one of electrodes to inject the carriers into each of the waveguides. Each of the waveguides has a lengthwise direction defined as a first direction, and a direction that is perpendicular to the first direction and is parallel to a surface of the substrate is defined as a second direction. The optical waveguide regions and the contact regions are disposed to be alternately aligned along the second direction.

Abstract: A lidar device having an integrated optics that has a beam deflecting unit having an optical phase array that has a multiplicity of antennas that are set up to emit electromagnetic radiation at a prespecified angle of radiation. The angle of radiation covers a prespecified field of view of the lidar device. The angle of radiation has a first angle of radiation subregion, in which electromagnetic radiation is emitted having a polarization A, and has a second angle of radiation subregion, in which electromagnetic radiation is emitted having a polarization B.

Abstract: The present disclosure provides a semiconductor device, a photonic circuit, and a method for adjusting a resonant wavelength of an optical modulator. The semiconductor device includes a substrate, a first waveguide disposed on the substrate, and a second waveguide disposed on the substrate and spaced apart from the first waveguide with a first distance. In addition, the second waveguide includes a first electrical coupling portion having a first type doping, a second electrical coupling portion having a second type doping, and an optical coupling portion disposed between the first electrical coupling portion and the second electrical coupling portion, wherein the second waveguide is configured to receive a first voltage through the first electrical coupling portion and the second electrical coupling portion to decrease a resonant wavelength of the second waveguide.

Abstract: Structures including an electro-optical phase shifter and methods of fabricating a structure including an electro-optical phase shifter. The structure includes a waveguide core on a semiconductor substrate, and an interconnect structure over the waveguide core and the semiconductor substrate. The waveguide core includes a phase shifter, and the interconnect structure includes a slotted shield and a transmission line coupled to the phase shifter. The slotted shield includes segments that are separated by slots. The slotted shield is positioned between the transmission line and the substrate.

Abstract: Embodiments described herein provide a waveguide for transmitting electromagnetic radiation. The waveguide comprising a core region, a cladding region extending around the core region; and a first layer of a material having a thickness of less than a skin depth of the material for electromagnetic radiation of a first wavelength; wherein the first layer is configured with a periodic refractive index and positioned within the waveguide such that a first surface polariton wave is excited at an interface between the core region and cladding region when electromagnetic radiation of the first wavelength is transmitted through the core region. There is also provided a method of manufacture of the waveguide.

Abstract: A semiconductor structure includes a semiconductor substrate, a semiconductor device and a heating structure. The semiconductor substrate includes a device region and a heating region surrounding the device region. The semiconductor device is located on the device region. The heating structure is located on the heating region and includes an intrinsic semiconductor area, at least one heating element and at least one heating pad. The intrinsic semiconductor area is surrounding the semiconductor device. The at least one heating element is located at a periphery of the intrinsic semiconductor area. The at least one heating pad is joined with the at least one heating element, wherein the at least one heating pad includes a plurality of contact structures, and a voltage is supplied from the plurality of contact structures to control a temperature of the at least one heating element.

Abstract: A silicon photonics-based optical modulator is disclosed. The optical modulator includes first radio frequency (RF) metal electrodes that operate as a ground, phase shifters disposed between the first RF metal electrodes for optically modulating an optical signal transmitted along an optical waveguide, second RF metal electrodes disposed between the phase shifters for providing an RF electrical signal received from a driving driver located outside of the optical modulator through one end, resistor-inductors (RL) connected to another end of the second RF metal electrodes, an inductive line disposed between the RLs and a power supply for applying a bias voltage to the optical modulator and the driving driver, and a silicon capacitor disposed between the RLs and the power supply for preventing a degradation of an RF response characteristic of the silicon photonics-based optical modulator caused by the inductive line.

Abstract: A resonator modulator for modulating light in a photonic circuit, the modulator comprising: a capacitor formed of a ring-shaped insulating region sandwiched between an outer conductive region and an inner conductive region, wherein at least one of the outer conductive regions or the inner conductive regions is a polycrystalline semiconductor material.

Abstract: High bandwidth (e.g., >100 GHz) modulators and methods of fabricating such are provided. An optical modulator comprises transmission lines configured to provide a respective radio frequency signal to a respective plurality of segmented capacitive loading electrodes; pluralities of segmented capacitive loading electrodes in electrical communication with a respective one of the transmission lines and in electrical communication with an interface layer of a semiconductor waveguide structure; and the semiconductor waveguide structure. The semiconductor waveguide structure is configured to modulate an optical signal propagating therethrough based at least in part on the respective radio frequency signal. The semiconductor waveguide structure comprises the interface layer, which (a) comprises a semiconductor material and (b) is configured such that an interface resistance of the modulator is ?4 Ohms.

Abstract: An optical switch structure includes at least one optical input port and at least one optical output port. The optical switch structure also includes an optical waveguide structure including a waveguide core and a waveguide cladding The optical waveguide structure is optically coupled to the at least one optical input port and the at least one optical output port. The waveguide core includes a first material characterized by a first index of refraction and a first electro-optic coefficient and the waveguide cladding includes a second material characterized by a second index of refraction less than the first index of refraction and a second electro-optic coefficient greater than the first electro-optic coefficient.

Abstract: A method of terminating an optical fiber having an inner core with a fiber optic connector including a ferrule having a micro-bore and an end face with a mating location is disclosed. The method includes determining a bore bearing angle of a bore offset of the micro-bore in the ferrule; determining a core bearing angle of a core offset of the inner core in the optical fiber; orienting the ferrule and the optical fiber relative to each other to minimize the distance between the inner core and the mating location; heating the ferrule to an processing temperature above room temperature; and coupling the optical fiber to the micro-bore of the ferrule. The size of the micro-bores and optical fibers may be selected to maximize the number of interference fits in a population of ferrules and optical fibers while minimizing failed fittings between the ferrules and optical fibers in the populations.

Abstract: An electro-optical phase modulator includes a waveguide made from a stack of strips. The stack includes a first strip made of a doped semiconductor material of a first conductivity type, a second strip made of a conductive material or of a doped semiconductor material of a second conductivity type, and a third strip made of a doped semiconductor material of the first conductivity type. The second strip is separated from the first strip by a first interface layer made of a dielectric material, and the third strip is separated from the second strip by a second interface layer made of a dielectric material.

Abstract: A wavelength conversion optical element using a nonlinear optical effect of a device structure in which wavelength conversion efficiency rises as targeted when the length of a waveguide is increased is provided. The element adopts a waveguide structure using lithium niobate of a second-order nonlinear optical material. Wavelength conversion regions are formed to correspond to two linear waveguides extending in parallel to each other on a plane of the planar structure and correspond to the lengths of the two linear waveguides. One end side of the linear waveguide is an incident side of excitation light and one end side of the linear waveguide is an emission side of wavelength converted light. The linear waveguides excluding the incident side and the emission side are joined by a bent waveguide.

Abstract: A functional element housing package includes a pin terminal disposed in an outer region of a housing for housing a functional element. A wiring substrate is connected with the pin terminal. The wiring substrate includes a through hole for receiving the pin terminal, a first metallic layer disposed around an opening of the through hole on a side of the wiring substrate which side is located close to the housing, a second metallic layer disposed around an opening of the through hole on a side of the wiring substrate which is opposed to the side located close to the housing, the second metallic layer being greater in area than the first metallic layer, a connection wiring line connected to the first metallic layer or the second metallic layer, and a solder which connects the pin terminal to each of the first metallic layer and the second metallic layer.

Abstract: A super-resolution digital tomosynthesis system for imaging an object including a source configured to emit penetrating particles toward an object; a detector configured to acquire a series of projection images of the object in response to the penetrating particles from the source; positioning apparatus configured to position the source and the detector; and an imaging system coupled to the source, the detector, and the positioning apparatus. The imaging system is configured to control the positioning apparatus to position the source in relation to the detector along a scan path and to change a distance between the source and the detector, control the source and the detector to acquire the series of projection images along the scan path with the distance change between the source and detector, and construct a tomographic volume exhibiting super-resolution from data representing the acquired series of projection images.

Abstract: Aspects of the present disclosure are directed to process flow to fabricate a waveguide structure with a silicon nitride core having atomic-level smooth sidewalls achieved by wet etching instead of the conventional dry etching process. A mask is pre-biased to account for lateral etching during the wet-etching steps.

Abstract: A first transmission line comprises a first pair of electrodes receiving an electrical drive comprising first and second drive signals, which are loaded by a first series of p-n junctions applying optical phase modulation to respective optical waves propagating over a first section of the first and second optical waveguide arms of an MZI. A second transmission line comprises a second pair of electrodes configured to receive the electrical drive after an electrical signal delay. The second pair of electrodes are loaded by a second series of p-n junctions applying optical phase modulation to the respective optical waves propagating over a second section of the first and second optical waveguide arms after propagation over the first section. An electrode extension structure provides the electrical drive to the second pair of electrodes, and comprises an unloaded transmission line portion imposing the electrical signal delay based on an optical signal delay.

Abstract: An integrated fan-out package includes a first redistribution structure, a die, an insulation encapsulation, and at least one first through interlayer via. The first redistribution structure includes a dielectric layer, a feed line at least partially disposed on the dielectric layer and a signal enhancement layer covering the feed line, wherein the signal enhancement layer has a lower dissipation factor (Df) and/or a lower permittivity (Dk) than the dielectric layer. The die is disposed on the first redistribution structure. The insulation encapsulation encapsulates the die. The at least one first TIV is embedded in the insulation encapsulation and the signal enhancement layer.

Abstract: Examples described herein relate to an optical device, such as, a ring resonator, that includes a ring waveguide. The ring resonator includes a ring waveguide to allow passage of light therethrough. Further, the ring resonator includes a modulator formed along a first section of the circumference of the ring waveguide to modulate the light inside the ring waveguide based on an application of a first reverse bias voltage to the modulator. Moreover, the ring resonator includes an avalanche photodiode (APD) isolated from the modulator and formed along a second section of the circumference of the ring waveguide to detect the intensity of the light inside the ring waveguide based on an application of a second reverse bias voltage to the APD. The second section is shorter than the first section, and the second reverse bias voltage is higher than the first reverse bias voltage.

Abstract: A multilayer film includes a single-crystal silicon layer, a first layer containing Zr, a second layer containing ZrO2, and a third layer containing a perovskite oxide having an electrooptic effect. The first layer, the second layer, and the third layer are provided in this order above the single-crystal silicon layer, and the multilayer film is transparent to a wavelength to be used.

Abstract: A method of forming a semiconductor structure is provided. A first inter-level dielectric (ILD) layer is formed overlying a molding layer. The first ILD layer is patterned to form a plurality of first openings. A first lower transmitter electrode and a first lower receiver electrode are formed by depositing a first metal material within the plurality of first openings. A first dielectric waveguide is formed overlying the first ILD layer, the first lower transmitter electrode and the first lower receiver electrode. A second ILD layer is formed overlying the first dielectric waveguide and includes a plurality of second openings. A second lower transmitter electrode and a second lower receiver electrode are formed by depositing a second metal material within the plurality of second openings. A second dielectric waveguide is formed overlying the second ILD layer, the second lower transmitter electrode and the second lower receiver electrode.

Abstract: Embodiments provide for an optical modulator that includes a first silicon region, a polycrystalline silicon region; a gate oxide region joining the first silicon region to a first side of the polycrystalline region; and a second silicon region formed on a second side of the polycrystalline silicon region opposite to the first side, thereby defining an active region of an optical modulator between the first silicon region, the polycrystalline region, the gate oxide region, and the second silicon region. The polycrystalline silicon region may be between 0 and 60 nanometers thick, and may be formed or patterned to the desired thickness. The second silicon region may be epitaxially grown from the polycrystalline silicon region and patterned into a desired cross sectional shape separately from or in combination with the polycrystalline silicon region.

Abstract: An optical modulator includes an optical modulation element including an optical waveguide formed on a substrate and a housing that accommodates the optical modulation element, the housing has a bottom surface wall having a quadrilateral shape in a plan view, first and second long side walls that are connected to two opposite edges of the bottom surface wall, and first and second short side walls that are shorter than the first and second long side walls and are connected to two other opposite edges of the bottom surface wall. An average wall thickness of the second long side wall is equal to or larger than an average wall thickness of the first long side wall. At least one of the first and second short side walls has an average thickness that is thinner than the average thickness of the first long side wall.

Abstract: Described herein are methods, systems, and apparatuses to utilize an electro-optic modulator including one or more heating elements. The modulator can utilize one or more heating elements to control an absorption or phase shift of the modulated optical signal. At least the active region of the modulator and the one or more heating elements of the modulator are included in a thermal isolation region comprising a low thermal conductivity to thermally isolate the active region and the one or more heating elements from a substrate of the PIC.

Abstract: The present disclosure relates to a single OPA (optical phased array) device including a light source; a waveguide which extends from the light source to allow light incident from the light source to pass through; a plurality of modulators which is disposed in the waveguide to modulate a phase of light in the waveguide; a two-dimensional material layer which passes or absorbs light incident from the light source; and an electrode which supplies charges to the two-dimensional material layer, in which the light incident from the light source passes through the two-dimensional material layer, the waveguide, and the modulator and is reflected by an external target of the single OPA device to pass through the modulator and the waveguide, and then absorbed by the two-dimensional material layer.

Abstract: A bias control method of a nested optical modulator includes detecting a frequency component that has a frequency equal to a frequency of a dither signal and that is included in an output of the optical modulator, with changing a voltage value of a first bias, to measure a first error-detection value, obtaining a first error-detection curve representing a relationship between the first error-detection value and the voltage of the first bias, obtaining a first correction value based on the first error-detection curve, and obtaining the first error-detection value obtained when the first bias voltage value is equal to a voltage value obtained by adding the first correction value to the first bias voltage value at a zero-crossing point of the first error-detection curve, as a first error control value. The first bias is controlled so that the first error-detection value is the first error control value.

Abstract: An optical modulator carrier assembly includes a optical modulator, a transmission line substrate, a first via, a second via and a wire having an inductor component provided on a second surface of the transmission line substrate, and electrically connecting between the another end of the first via and the another end of the second via. The one end of the first via, the cathode electrode pad, the terminating resistor, the one end of the second via are arranged on the in this order.

Abstract: Integrated wavelength selectors are described. The wavelength selector may include silicon nitride ring resonator disposed vertically between a heater and a temperature sensor. The temperature sensor may be formed of silicon in some embodiments. The wavelength selector may be coupled to the output port of a tunable laser, or may be disposed within a laser cavity.

Abstract: Structures for an edge coupler and methods of fabricating a structure for an edge coupler. A first waveguide core has a first section that has a tapered shape and a second section that is adjoined to the first section. Multiple segments are positioned with a spaced arrangement adjacent to an end surface of the second section of the first waveguide core. A slab layer is adjoined to the first section of the first waveguide core. A second waveguide core has a section that overlaps with the first section of the first waveguide core to define a layer stack. The section of the second waveguide core has a tapered shape, and the first and second waveguide cores are comprised of different materials. The first section of the first waveguide core has a first thickness, and the slab layer has a second thickness that is less than the first thickness.

Abstract: In one embodiment, an intensity modulated (IM) direct detection (DD) optical receiver using a photonic integrated circuit (PIC) with an array of semiconductor optical amplifiers (SOAs) for flexible chromatic dispersion compensation (CDC) is provided. The PIC comprises an 1:N optical splitter to split an input optical signal into N copies; an array of N semiconductor optical amplifiers (SOAs) to receive the N optical outputs from the optical splitter; an array of optical delay lines to receive the outputs from the N SOAs, wherein the delay coefficients for the array of optical delay lines are {0, T, 2T, . . . (N?1) T}, where T=½B, where B is the system symbol rate, and each optical path with odd index (1, 3, 5, . . . N?1) from the N optical paths includes a 90-degree phase-shifter; and an optical N:1 coupler to re-combine all N optical paths. A method for automatically controlling a PIC based on the feedback signal from the Rx DSP in an optical receiver is also provided.

Abstract: A light pulse source and method for generating repetitive optical pulses are described. The light pulse source includes a continuous wave cw laser device, an optical waveguide optically coupled with the laser device, an optical microresonator, and a tuning device. The optical microresonator coupling cw laser light via the waveguide into the microresonator, which, may include, a light field in a soliton state with soliton shaped pulses coupled out of the microresonator for providing the repetitive optical pulses. The laser device includes a chip based semiconductor laser, the microresonator and/or the waveguide may reflect an optical feedback portion of light back to the semiconductor laser, which may provide self-injection locking relative to a resonance frequency of the microresonator. The tuning device is arranged for tuning at least one of a driving current and a temperature of the semiconductor laser such that the microresonator may provide the soliton state.

Abstract: A terahertz device includes a first waveguide, which is a plasmonic waveguide, having a first core with a nonlinear material, such as a ferroelectric material, and having a cladding with a first cladding portion including, at a first interface with the first core, a first cladding material that is an electrically conductive material. The terahertz device can include an antenna having a first and a second arm (for receiving or for emitting or for both, receiving and emitting electromagnetic waves in the terahertz range); a first and a second electrode arranged close to the first waveguide.

Abstract: A velocity mismatch between optical signals and microwave electrical signals in electro-optic devices, such as modulators, may be compensated by utilizing different lengths of bends in the optical waveguides as compared to the microwave electrodes to match the velocity of the microwave signal propagating along the coplanar waveguide to the velocity of the optical signal. To ensure the electrode bends do not affect the light in the optical waveguide bends, the electrode may have to be rerouted, e.g. above or below, the optical waveguide layer. To ensure that the pair of optical waveguides have the same optical length, a waveguide crossing may be used to cross the first waveguide through the second waveguide.

Abstract: The present disclosure provides an optical waveguide design of a fiber modified with a thin layer of epsilon-near-zero (ENZ) material. The design results in an excitation of a highly confined waveguide mode in the fiber near the wavelength where permittivity of thin layer approaches zero. Due to the high field confinement within thin layer, the ENZ mode can be characterized by a peak in modal loss of the hybrid waveguide. Results show that such in-fiber excitation of ENZ mode is due to the coupling of the guided fundamental core mode to the thin-film ENZ mode. The phase matching wavelength, where the coupling takes place, varies depending on the refractive index of the constituents. These ENZ nanostructured optical fibers have many potential applications, for example, in ENZ nonlinear and magneto-optics, as in-fiber wavelength-dependent filters, and as subwavelength fluid channel for optical and bio-photonic sensing.

Abstract: An optical waveguide element including a substrate, an optical waveguide formed on the substrate, and an electrode for controlling a light wave propagating through the optical waveguide, in which the optical waveguide and the electrode have an intersection in which the optical waveguide and the electrode intersect with each other, and at the intersection, the electrode has a multilayer structure including a plurality of metal layers made of a metal material, and a resin layer made of a resin material is formed between the electrode and the substrate.

Abstract: Various embodiments of a micro-disc modulator as well as a silicon photonic device and an optoelectronic communication apparatus using the micro-disc modulator are described. In one aspect, a device includes a SOI substrate and a silicon photonic structure formed on a primary surface of the SOI substrate. The semiconductor substrate includes a silicon waveguide and a micro-disc modulator. The micro-disc modulator is adjacent to the silicon waveguide and has a top surface substantially parallel to the primary surface of the SOI substrate. The top surface of the micro-disc modulator includes one or more discontinuities therein. The micro-disc modulator may be a multi junction micro-disc modulator having two vertical p-n junctions with a single resonance frequency to achieve high-speed modulation and low-power consumption.