Electro-optic Patents (Class 385/2)
  • Patent number: 12015247
    Abstract: An optical transmission apparatus includes a first multilevel optical phase modulator and a first semiconductor optical amplifier. The first semiconductor optical amplifier includes a first active region having a first multiple quantum well structure. Assuming that a first number of layers of a plurality of first well layers is defined as n1 and a first length of the first active region is defined as L1 (?m): (a) n1=5 and 400?L1?563; (b) n1=6 and 336?L1?470; (c) n1=7 and 280?L1?432; (d) n1=8 and 252?L1?397; (e) n1=9 and 224?L1?351; or (f) n1=10 and 200?L1?297.
    Type: Grant
    Filed: December 5, 2019
    Date of Patent: June 18, 2024
    Assignee: MITSUBISHI ELECTRIC CORPORATION
    Inventors: Shusaku Hayashi, Satoshi Nishikawa, Koichi Akiyama
  • Patent number: 12013568
    Abstract: Implementations disclosed herein provide for improving phase tuning efficiency of optical devices, such as a hybrid metal-on-semiconductor capacitor (MOSCAP) III-V/Si micro-ring laser. The present disclosure integrates silicon devices into a waveguide structural of the optical devices disclosed herein, for example, a waveguide resistor heater, a waveguide PIN diode, and waveguide PN diode. In some examples, the optical devices is a MOSCAP formed by a dielectric layer between two semiconductor layers, which provides for small phase tuning via plasma dispersion and/or carrier dispersion effect will occur depending on bias polarity. The plasma dispersion and/or carrier dispersion effect is enhanced according to implementations disclosed herein by heat, carrier injection, and/or additional plasma dispersion based on the silicon devices disclosed integrated into the waveguide.
    Type: Grant
    Filed: March 15, 2022
    Date of Patent: June 18, 2024
    Assignee: Hewlett Packard Enterprise Development LP
    Inventors: Stanley Cheung, Yuan Yuan, Di Liang, Raymond G. Beausoleil
  • Patent number: 12001116
    Abstract: An optical waveguide structure forms an MZI in proximity to an electro-optic material. A first (second) electrical input port is configured to receive a first (second) drive signal. The second drive signal has a negative amplitude relative to the first drive signal. A first (second) transmission line is configured to propagate a first (second) electromagnetic wave over at least a portion of a first (second) optical waveguide arm to apply an optical phase modulation. A drive signal interconnection structure is configured to provide a first electrical connection between the first electrical input port and an electrode shared by the transmission lines, and a second electrical connection between the second electrical input port and respective electrodes of the transmission lines; and is configured to preserve relative phase shifts between the drive signals. Input impedances at the first and second electrical input ports are substantially equal to each other.
    Type: Grant
    Filed: June 21, 2021
    Date of Patent: June 4, 2024
    Assignee: Ciena Corporation
    Inventors: Maxime Jacques, Jean-Frédéric Gagné, Michael Vitic
  • Patent number: 11994757
    Abstract: A hybrid photonic chip comprising a plurality of semiconductor materials arranged to define a chip providing a function, wherein at least a first part of the chip is formed of materials which can be fabricated using a CMOS technique; and at least a second part of the chip which comprises non-linear crystal material and is not subjected to etching process; wherein the second part of the chip in conjunction with the first part is configured to support a propagating low loss single mode.
    Type: Grant
    Filed: April 24, 2020
    Date of Patent: May 28, 2024
    Assignee: ADVANCED MICRO FOUNDRY PTE. LTD.
    Inventors: Patrick Guo Qiang Lo, Shawn Yohanes Siew, Larry Lian Xi Jia
  • Patent number: 11994716
    Abstract: An optical waveguide structure. In some embodiments, the optical waveguide structure includes a semiconductor waveguide having a waveguide ridge, and a heater. The waveguide ridge may have a varying dopant concentration across its cross-section. The heater may include a first contact and a second contact, and the waveguide structure may include a conductive path from the first contact to the second contact, the conductive path extending through a doped portion of the waveguide ridge.
    Type: Grant
    Filed: March 15, 2022
    Date of Patent: May 28, 2024
    Assignee: Rockley Photonics Limited
    Inventors: James Dongyoon Oh, Jeffrey Driscoll
  • Patent number: 11988905
    Abstract: A phase shifter includes a substrate, waveguides and a wiring portion. The substrate includes optical waveguide regions and contact regions. Each contact region has contact portions. The waveguides are disposed at the substrate, and each of the waveguides accumulates carriers to modulate a phase of light for guiding propagation of the light. The wiring portion electrically connects each of the waveguides and each of the contact portions. Each of the contact portions connecting each of the waveguides to a corresponding one of electrodes to inject the carriers into each of the waveguides. Each of the waveguides has a lengthwise direction defined as a first direction, and a direction that is perpendicular to the first direction and is parallel to a surface of the substrate is defined as a second direction. The optical waveguide regions and the contact regions are disposed to be alternately aligned along the second direction.
    Type: Grant
    Filed: May 31, 2022
    Date of Patent: May 21, 2024
    Assignees: DENSO CORPORATION, TOYOTA JIDOSHA KABUSHIKI KAISHA, MIRISE Technologies Corporation
    Inventor: Seita Iwahashi
  • Patent number: 11982766
    Abstract: A lidar device having an integrated optics that has a beam deflecting unit having an optical phase array that has a multiplicity of antennas that are set up to emit electromagnetic radiation at a prespecified angle of radiation. The angle of radiation covers a prespecified field of view of the lidar device. The angle of radiation has a first angle of radiation subregion, in which electromagnetic radiation is emitted having a polarization A, and has a second angle of radiation subregion, in which electromagnetic radiation is emitted having a polarization B.
    Type: Grant
    Filed: February 25, 2021
    Date of Patent: May 14, 2024
    Assignee: ROBERT BOSCH GMBH
    Inventors: Jan Niklas Caspers, Simon Schneider
  • Patent number: 11953720
    Abstract: The present disclosure provides a semiconductor device, a photonic circuit, and a method for adjusting a resonant wavelength of an optical modulator. The semiconductor device includes a substrate, a first waveguide disposed on the substrate, and a second waveguide disposed on the substrate and spaced apart from the first waveguide with a first distance. In addition, the second waveguide includes a first electrical coupling portion having a first type doping, a second electrical coupling portion having a second type doping, and an optical coupling portion disposed between the first electrical coupling portion and the second electrical coupling portion, wherein the second waveguide is configured to receive a first voltage through the first electrical coupling portion and the second electrical coupling portion to decrease a resonant wavelength of the second waveguide.
    Type: Grant
    Filed: February 17, 2022
    Date of Patent: April 9, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Lan-Chou Cho, Chewn-Pu Jou, Cheng-Tse Tang, Stefan Rusu
  • Patent number: 11934051
    Abstract: Structures including an electro-optical phase shifter and methods of fabricating a structure including an electro-optical phase shifter. The structure includes a waveguide core on a semiconductor substrate, and an interconnect structure over the waveguide core and the semiconductor substrate. The waveguide core includes a phase shifter, and the interconnect structure includes a slotted shield and a transmission line coupled to the phase shifter. The slotted shield includes segments that are separated by slots. The slotted shield is positioned between the transmission line and the substrate.
    Type: Grant
    Filed: March 23, 2023
    Date of Patent: March 19, 2024
    Assignee: GlobalFoundries U.S. Inc.
    Inventor: Kevin K. Dezfulian
  • Patent number: 11921322
    Abstract: Embodiments described herein provide a waveguide for transmitting electromagnetic radiation. The waveguide comprising a core region, a cladding region extending around the core region; and a first layer of a material having a thickness of less than a skin depth of the material for electromagnetic radiation of a first wavelength; wherein the first layer is configured with a periodic refractive index and positioned within the waveguide such that a first surface polariton wave is excited at an interface between the core region and cladding region when electromagnetic radiation of the first wavelength is transmitted through the core region. There is also provided a method of manufacture of the waveguide.
    Type: Grant
    Filed: August 30, 2018
    Date of Patent: March 5, 2024
    Assignee: TELEFONAKTIEBOLAGET LM ERICSSON (PUBL)
    Inventors: Antonio D'Errico, Alessandra Bigongiari
  • Patent number: 11908765
    Abstract: A semiconductor structure includes a semiconductor substrate, a semiconductor device and a heating structure. The semiconductor substrate includes a device region and a heating region surrounding the device region. The semiconductor device is located on the device region. The heating structure is located on the heating region and includes an intrinsic semiconductor area, at least one heating element and at least one heating pad. The intrinsic semiconductor area is surrounding the semiconductor device. The at least one heating element is located at a periphery of the intrinsic semiconductor area. The at least one heating pad is joined with the at least one heating element, wherein the at least one heating pad includes a plurality of contact structures, and a voltage is supplied from the plurality of contact structures to control a temperature of the at least one heating element.
    Type: Grant
    Filed: June 30, 2022
    Date of Patent: February 20, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chih-Tsung Shih, Chewn-Pu Jou, Stefan Rusu, Feng-Wei Kuo
  • Patent number: 11899334
    Abstract: A silicon photonics-based optical modulator is disclosed. The optical modulator includes first radio frequency (RF) metal electrodes that operate as a ground, phase shifters disposed between the first RF metal electrodes for optically modulating an optical signal transmitted along an optical waveguide, second RF metal electrodes disposed between the phase shifters for providing an RF electrical signal received from a driving driver located outside of the optical modulator through one end, resistor-inductors (RL) connected to another end of the second RF metal electrodes, an inductive line disposed between the RLs and a power supply for applying a bias voltage to the optical modulator and the driving driver, and a silicon capacitor disposed between the RLs and the power supply for preventing a degradation of an RF response characteristic of the silicon photonics-based optical modulator caused by the inductive line.
    Type: Grant
    Filed: December 8, 2021
    Date of Patent: February 13, 2024
    Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventors: Sanghwa Yoo, Sooyeon Kim, Heuk Park, Jyung Chan Lee, Joon Ki Lee
  • Patent number: 11874540
    Abstract: A resonator modulator for modulating light in a photonic circuit, the modulator comprising: a capacitor formed of a ring-shaped insulating region sandwiched between an outer conductive region and an inner conductive region, wherein at least one of the outer conductive regions or the inner conductive regions is a polycrystalline semiconductor material.
    Type: Grant
    Filed: January 28, 2022
    Date of Patent: January 16, 2024
    Assignee: University of Southampton
    Inventors: Weiwei Zhang, Graham Reed, David Thomson, Martin Ebert, Shinichi Saito
  • Patent number: 11855700
    Abstract: High bandwidth (e.g., >100 GHz) modulators and methods of fabricating such are provided. An optical modulator comprises transmission lines configured to provide a respective radio frequency signal to a respective plurality of segmented capacitive loading electrodes; pluralities of segmented capacitive loading electrodes in electrical communication with a respective one of the transmission lines and in electrical communication with an interface layer of a semiconductor waveguide structure; and the semiconductor waveguide structure. The semiconductor waveguide structure is configured to modulate an optical signal propagating therethrough based at least in part on the respective radio frequency signal. The semiconductor waveguide structure comprises the interface layer, which (a) comprises a semiconductor material and (b) is configured such that an interface resistance of the modulator is ?4 Ohms.
    Type: Grant
    Filed: December 16, 2021
    Date of Patent: December 26, 2023
    Assignee: Mellanox Technologies, Ltd.
    Inventors: Moshe B. Oron, Elad Mentovich, Tali Septon
  • Patent number: 11841559
    Abstract: An optical switch structure includes at least one optical input port and at least one optical output port. The optical switch structure also includes an optical waveguide structure including a waveguide core and a waveguide cladding The optical waveguide structure is optically coupled to the at least one optical input port and the at least one optical output port. The waveguide core includes a first material characterized by a first index of refraction and a first electro-optic coefficient and the waveguide cladding includes a second material characterized by a second index of refraction less than the first index of refraction and a second electro-optic coefficient greater than the first electro-optic coefficient.
    Type: Grant
    Filed: February 21, 2023
    Date of Patent: December 12, 2023
    Assignee: Psiquantum, Corp.
    Inventors: Chia-Ming Chang, Hung-Hsi Lin, Gary Gibson
  • Patent number: 11822129
    Abstract: A method of terminating an optical fiber having an inner core with a fiber optic connector including a ferrule having a micro-bore and an end face with a mating location is disclosed. The method includes determining a bore bearing angle of a bore offset of the micro-bore in the ferrule; determining a core bearing angle of a core offset of the inner core in the optical fiber; orienting the ferrule and the optical fiber relative to each other to minimize the distance between the inner core and the mating location; heating the ferrule to an processing temperature above room temperature; and coupling the optical fiber to the micro-bore of the ferrule. The size of the micro-bores and optical fibers may be selected to maximize the number of interference fits in a population of ferrules and optical fibers while minimizing failed fittings between the ferrules and optical fibers in the populations.
    Type: Grant
    Filed: October 10, 2022
    Date of Patent: November 21, 2023
    Assignee: Corning Research & Development Corporation
    Inventors: Raisa Rose Boben, Woraphat Dockchoorung, Riley Saunders Freeland, Klaus Hartkorn, Mark Alan McDermott, Aislin Karina Sullivan, Pushkar Tandon
  • Patent number: 11822164
    Abstract: An electro-optical phase modulator includes a waveguide made from a stack of strips. The stack includes a first strip made of a doped semiconductor material of a first conductivity type, a second strip made of a conductive material or of a doped semiconductor material of a second conductivity type, and a third strip made of a doped semiconductor material of the first conductivity type. The second strip is separated from the first strip by a first interface layer made of a dielectric material, and the third strip is separated from the second strip by a second interface layer made of a dielectric material.
    Type: Grant
    Filed: September 1, 2020
    Date of Patent: November 21, 2023
    Assignee: STMicroelectronics (Crolles 2) SAS
    Inventor: Stephane Monfray
  • Patent number: 11815785
    Abstract: A wavelength conversion optical element using a nonlinear optical effect of a device structure in which wavelength conversion efficiency rises as targeted when the length of a waveguide is increased is provided. The element adopts a waveguide structure using lithium niobate of a second-order nonlinear optical material. Wavelength conversion regions are formed to correspond to two linear waveguides extending in parallel to each other on a plane of the planar structure and correspond to the lengths of the two linear waveguides. One end side of the linear waveguide is an incident side of excitation light and one end side of the linear waveguide is an emission side of wavelength converted light. The linear waveguides excluding the incident side and the emission side are joined by a bent waveguide.
    Type: Grant
    Filed: May 27, 2019
    Date of Patent: November 14, 2023
    Assignee: NIPPON TELEGRAPH AND TELEPHONE CORPORATION
    Inventors: Takahiro Kashiwazaki, Takeshi Umeki, Ryoichi Kasahara, Osamu Tadanaga, Koji Embutsu, Takushi Kazama, Nobutatsu Koshobu
  • Patent number: 11815749
    Abstract: A functional element housing package includes a pin terminal disposed in an outer region of a housing for housing a functional element. A wiring substrate is connected with the pin terminal. The wiring substrate includes a through hole for receiving the pin terminal, a first metallic layer disposed around an opening of the through hole on a side of the wiring substrate which side is located close to the housing, a second metallic layer disposed around an opening of the through hole on a side of the wiring substrate which is opposed to the side located close to the housing, the second metallic layer being greater in area than the first metallic layer, a connection wiring line connected to the first metallic layer or the second metallic layer, and a solder which connects the pin terminal to each of the first metallic layer and the second metallic layer.
    Type: Grant
    Filed: March 27, 2017
    Date of Patent: November 14, 2023
    Assignee: Kyocera Corporation
    Inventors: Hiroyuki Nakamichi, Takayuki Shirasaki
  • Patent number: 11786186
    Abstract: A super-resolution digital tomosynthesis system for imaging an object including a source configured to emit penetrating particles toward an object; a detector configured to acquire a series of projection images of the object in response to the penetrating particles from the source; positioning apparatus configured to position the source and the detector; and an imaging system coupled to the source, the detector, and the positioning apparatus. The imaging system is configured to control the positioning apparatus to position the source in relation to the detector along a scan path and to change a distance between the source and the detector, control the source and the detector to acquire the series of projection images along the scan path with the distance change between the source and detector, and construct a tomographic volume exhibiting super-resolution from data representing the acquired series of projection images.
    Type: Grant
    Filed: November 24, 2021
    Date of Patent: October 17, 2023
    Assignees: The Trustees of the University of Pennsylvania, Real Time Tomography, LLC
    Inventors: Andrew D. A. Maidment, Raymond J. Acciavatti, Susan Ng, Peter A. Ringer, Johnny Kuo
  • Patent number: 11782211
    Abstract: Aspects of the present disclosure are directed to process flow to fabricate a waveguide structure with a silicon nitride core having atomic-level smooth sidewalls achieved by wet etching instead of the conventional dry etching process. A mask is pre-biased to account for lateral etching during the wet-etching steps.
    Type: Grant
    Filed: December 16, 2022
    Date of Patent: October 10, 2023
    Assignee: Anello Photonics, Inc.
    Inventor: Avi Feshali
  • Patent number: 11742219
    Abstract: An integrated fan-out package includes a first redistribution structure, a die, an insulation encapsulation, and at least one first through interlayer via. The first redistribution structure includes a dielectric layer, a feed line at least partially disposed on the dielectric layer and a signal enhancement layer covering the feed line, wherein the signal enhancement layer has a lower dissipation factor (Df) and/or a lower permittivity (Dk) than the dielectric layer. The die is disposed on the first redistribution structure. The insulation encapsulation encapsulates the die. The at least one first TIV is embedded in the insulation encapsulation and the signal enhancement layer.
    Type: Grant
    Filed: January 28, 2022
    Date of Patent: August 29, 2023
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Kai-Chiang Wu, Chung-Hao Tsai, Chun-Lin Lu, Yen-Ping Wang, Che-Wei Hsu
  • Patent number: 11740533
    Abstract: A first transmission line comprises a first pair of electrodes receiving an electrical drive comprising first and second drive signals, which are loaded by a first series of p-n junctions applying optical phase modulation to respective optical waves propagating over a first section of the first and second optical waveguide arms of an MZI. A second transmission line comprises a second pair of electrodes configured to receive the electrical drive after an electrical signal delay. The second pair of electrodes are loaded by a second series of p-n junctions applying optical phase modulation to the respective optical waves propagating over a second section of the first and second optical waveguide arms after propagation over the first section. An electrode extension structure provides the electrical drive to the second pair of electrodes, and comprises an unloaded transmission line portion imposing the electrical signal delay based on an optical signal delay.
    Type: Grant
    Filed: September 14, 2021
    Date of Patent: August 29, 2023
    Assignee: Ciena Corporation
    Inventors: Michel Poulin, Alexandre Delisle-Simard, Michael Vitic
  • Patent number: 11726264
    Abstract: Examples described herein relate to an optical device, such as, a ring resonator, that includes a ring waveguide. The ring resonator includes a ring waveguide to allow passage of light therethrough. Further, the ring resonator includes a modulator formed along a first section of the circumference of the ring waveguide to modulate the light inside the ring waveguide based on an application of a first reverse bias voltage to the modulator. Moreover, the ring resonator includes an avalanche photodiode (APD) isolated from the modulator and formed along a second section of the circumference of the ring waveguide to detect the intensity of the light inside the ring waveguide based on an application of a second reverse bias voltage to the APD. The second section is shorter than the first section, and the second reverse bias voltage is higher than the first reverse bias voltage.
    Type: Grant
    Filed: January 18, 2022
    Date of Patent: August 15, 2023
    Assignee: Hewlett Packard Enterprise Development LP
    Inventors: Yuan Yuan, Di Liang
  • Patent number: 11709384
    Abstract: A multilayer film includes a single-crystal silicon layer, a first layer containing Zr, a second layer containing ZrO2, and a third layer containing a perovskite oxide having an electrooptic effect. The first layer, the second layer, and the third layer are provided in this order above the single-crystal silicon layer, and the multilayer film is transparent to a wavelength to be used.
    Type: Grant
    Filed: May 27, 2021
    Date of Patent: July 25, 2023
    Assignee: FUJITSU OPTICAL COMPONENTS LIMITED
    Inventor: Nobuaki Mitamura
  • Patent number: 11682638
    Abstract: A method of forming a semiconductor structure is provided. A first inter-level dielectric (ILD) layer is formed overlying a molding layer. The first ILD layer is patterned to form a plurality of first openings. A first lower transmitter electrode and a first lower receiver electrode are formed by depositing a first metal material within the plurality of first openings. A first dielectric waveguide is formed overlying the first ILD layer, the first lower transmitter electrode and the first lower receiver electrode. A second ILD layer is formed overlying the first dielectric waveguide and includes a plurality of second openings. A second lower transmitter electrode and a second lower receiver electrode are formed by depositing a second metal material within the plurality of second openings. A second dielectric waveguide is formed overlying the second ILD layer, the second lower transmitter electrode and the second lower receiver electrode.
    Type: Grant
    Filed: August 20, 2020
    Date of Patent: June 20, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Wen-Shiang Liao, Huan-Neng Chen
  • Patent number: 11650439
    Abstract: Embodiments provide for an optical modulator that includes a first silicon region, a polycrystalline silicon region; a gate oxide region joining the first silicon region to a first side of the polycrystalline region; and a second silicon region formed on a second side of the polycrystalline silicon region opposite to the first side, thereby defining an active region of an optical modulator between the first silicon region, the polycrystalline region, the gate oxide region, and the second silicon region. The polycrystalline silicon region may be between 0 and 60 nanometers thick, and may be formed or patterned to the desired thickness. The second silicon region may be epitaxially grown from the polycrystalline silicon region and patterned into a desired cross sectional shape separately from or in combination with the polycrystalline silicon region.
    Type: Grant
    Filed: January 12, 2021
    Date of Patent: May 16, 2023
    Assignee: Cisco Technology, Inc.
    Inventors: Alexey V. Vert, Mark A. Webster
  • Patent number: 11644734
    Abstract: An optical modulator includes an optical modulation element including an optical waveguide formed on a substrate and a housing that accommodates the optical modulation element, the housing has a bottom surface wall having a quadrilateral shape in a plan view, first and second long side walls that are connected to two opposite edges of the bottom surface wall, and first and second short side walls that are shorter than the first and second long side walls and are connected to two other opposite edges of the bottom surface wall. An average wall thickness of the second long side wall is equal to or larger than an average wall thickness of the first long side wall. At least one of the first and second short side walls has an average thickness that is thinner than the average thickness of the first long side wall.
    Type: Grant
    Filed: July 3, 2019
    Date of Patent: May 9, 2023
    Assignee: SUMITOMO OSAKA CEMENT CO., LTD.
    Inventors: Norikazu Miyazaki, Toru Sugamata
  • Patent number: 11624942
    Abstract: Described herein are methods, systems, and apparatuses to utilize an electro-optic modulator including one or more heating elements. The modulator can utilize one or more heating elements to control an absorption or phase shift of the modulated optical signal. At least the active region of the modulator and the one or more heating elements of the modulator are included in a thermal isolation region comprising a low thermal conductivity to thermally isolate the active region and the one or more heating elements from a substrate of the PIC.
    Type: Grant
    Filed: June 16, 2021
    Date of Patent: April 11, 2023
    Assignee: OpenLight Photonics, Inc.
    Inventors: Robert Silvio Guzzon, Erik Norberg, Jonathan Edgar Roth
  • Patent number: 11619859
    Abstract: The present disclosure relates to a single OPA (optical phased array) device including a light source; a waveguide which extends from the light source to allow light incident from the light source to pass through; a plurality of modulators which is disposed in the waveguide to modulate a phase of light in the waveguide; a two-dimensional material layer which passes or absorbs light incident from the light source; and an electrode which supplies charges to the two-dimensional material layer, in which the light incident from the light source passes through the two-dimensional material layer, the waveguide, and the modulator and is reflected by an external target of the single OPA device to pass through the modulator and the waveguide, and then absorbed by the two-dimensional material layer.
    Type: Grant
    Filed: November 1, 2021
    Date of Patent: April 4, 2023
    Assignee: Research & Business Foundation Sungkyunkwan University
    Inventors: Byoung Lyong Choi, Dongmok Whang, Tae Jun Gu, Sung Won Moon
  • Patent number: 11604370
    Abstract: An optical modulator carrier assembly includes a optical modulator, a transmission line substrate, a first via, a second via and a wire having an inductor component provided on a second surface of the transmission line substrate, and electrically connecting between the another end of the first via and the another end of the second via. The one end of the first via, the cathode electrode pad, the terminating resistor, the one end of the second via are arranged on the in this order.
    Type: Grant
    Filed: April 14, 2020
    Date of Patent: March 14, 2023
    Assignee: SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
    Inventor: Masahiro Hirayama
  • Patent number: 11604369
    Abstract: A bias control method of a nested optical modulator includes detecting a frequency component that has a frequency equal to a frequency of a dither signal and that is included in an output of the optical modulator, with changing a voltage value of a first bias, to measure a first error-detection value, obtaining a first error-detection curve representing a relationship between the first error-detection value and the voltage of the first bias, obtaining a first correction value based on the first error-detection curve, and obtaining the first error-detection value obtained when the first bias voltage value is equal to a voltage value obtained by adding the first correction value to the first bias voltage value at a zero-crossing point of the first error-detection curve, as a first error control value. The first bias is controlled so that the first error-detection value is the first error control value.
    Type: Grant
    Filed: March 15, 2022
    Date of Patent: March 14, 2023
    Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventor: Masaru Takechi
  • Patent number: 11556020
    Abstract: Integrated wavelength selectors are described. The wavelength selector may include silicon nitride ring resonator disposed vertically between a heater and a temperature sensor. The temperature sensor may be formed of silicon in some embodiments. The wavelength selector may be coupled to the output port of a tunable laser, or may be disposed within a laser cavity.
    Type: Grant
    Filed: July 29, 2020
    Date of Patent: January 17, 2023
    Assignee: ACACIA COMMUNICATIONS, INC.
    Inventor: Long Chen
  • Patent number: 11536903
    Abstract: Structures for an edge coupler and methods of fabricating a structure for an edge coupler. A first waveguide core has a first section that has a tapered shape and a second section that is adjoined to the first section. Multiple segments are positioned with a spaced arrangement adjacent to an end surface of the second section of the first waveguide core. A slab layer is adjoined to the first section of the first waveguide core. A second waveguide core has a section that overlaps with the first section of the first waveguide core to define a layer stack. The section of the second waveguide core has a tapered shape, and the first and second waveguide cores are comprised of different materials. The first section of the first waveguide core has a first thickness, and the slab layer has a second thickness that is less than the first thickness.
    Type: Grant
    Filed: August 19, 2021
    Date of Patent: December 27, 2022
    Assignee: GlobalFoundries U.S. Inc.
    Inventors: Theodore Letavic, Yusheng Bian, Kenneth J. Giewont, Karen Nummy
  • Patent number: 11522332
    Abstract: In one embodiment, an intensity modulated (IM) direct detection (DD) optical receiver using a photonic integrated circuit (PIC) with an array of semiconductor optical amplifiers (SOAs) for flexible chromatic dispersion compensation (CDC) is provided. The PIC comprises an 1:N optical splitter to split an input optical signal into N copies; an array of N semiconductor optical amplifiers (SOAs) to receive the N optical outputs from the optical splitter; an array of optical delay lines to receive the outputs from the N SOAs, wherein the delay coefficients for the array of optical delay lines are {0, T, 2T, . . . (N?1) T}, where T=½B, where B is the system symbol rate, and each optical path with odd index (1, 3, 5, . . . N?1) from the N optical paths includes a 90-degree phase-shifter; and an optical N:1 coupler to re-combine all N optical paths. A method for automatically controlling a PIC based on the feedback signal from the Rx DSP in an optical receiver is also provided.
    Type: Grant
    Filed: April 1, 2021
    Date of Patent: December 6, 2022
    Inventor: Nguyen Tan Hung
  • Patent number: 11513419
    Abstract: A light pulse source and method for generating repetitive optical pulses are described. The light pulse source includes a continuous wave cw laser device, an optical waveguide optically coupled with the laser device, an optical microresonator, and a tuning device. The optical microresonator coupling cw laser light via the waveguide into the microresonator, which, may include, a light field in a soliton state with soliton shaped pulses coupled out of the microresonator for providing the repetitive optical pulses. The laser device includes a chip based semiconductor laser, the microresonator and/or the waveguide may reflect an optical feedback portion of light back to the semiconductor laser, which may provide self-injection locking relative to a resonance frequency of the microresonator. The tuning device is arranged for tuning at least one of a driving current and a temperature of the semiconductor laser such that the microresonator may provide the soliton state.
    Type: Grant
    Filed: September 17, 2018
    Date of Patent: November 29, 2022
    Assignee: Ecole Polytechnique Federale de Lausanne (EPFL)
    Inventors: Tobias Kippenberg, Michael L. Gorodetsky, Arslan Sajid Raja, Hairun Guo
  • Patent number: 11499915
    Abstract: A terahertz device includes a first waveguide, which is a plasmonic waveguide, having a first core with a nonlinear material, such as a ferroelectric material, and having a cladding with a first cladding portion including, at a first interface with the first core, a first cladding material that is an electrically conductive material. The terahertz device can include an antenna having a first and a second arm (for receiving or for emitting or for both, receiving and emitting electromagnetic waves in the terahertz range); a first and a second electrode arranged close to the first waveguide.
    Type: Grant
    Filed: March 20, 2018
    Date of Patent: November 15, 2022
    Assignee: ETH ZÜRICH
    Inventors: Yannick Salamin, Ping Ma, Ueli Koch, Jürg Leuthold
  • Patent number: 11474384
    Abstract: A velocity mismatch between optical signals and microwave electrical signals in electro-optic devices, such as modulators, may be compensated by utilizing different lengths of bends in the optical waveguides as compared to the microwave electrodes to match the velocity of the microwave signal propagating along the coplanar waveguide to the velocity of the optical signal. To ensure the electrode bends do not affect the light in the optical waveguide bends, the electrode may have to be rerouted, e.g. above or below, the optical waveguide layer. To ensure that the pair of optical waveguides have the same optical length, a waveguide crossing may be used to cross the first waveguide through the second waveguide.
    Type: Grant
    Filed: April 2, 2020
    Date of Patent: October 18, 2022
    Assignee: HyperLight Corporation
    Inventors: Prashanta Kharel, Mian Zhang, Christian Reimer
  • Patent number: 11448820
    Abstract: The present disclosure provides an optical waveguide design of a fiber modified with a thin layer of epsilon-near-zero (ENZ) material. The design results in an excitation of a highly confined waveguide mode in the fiber near the wavelength where permittivity of thin layer approaches zero. Due to the high field confinement within thin layer, the ENZ mode can be characterized by a peak in modal loss of the hybrid waveguide. Results show that such in-fiber excitation of ENZ mode is due to the coupling of the guided fundamental core mode to the thin-film ENZ mode. The phase matching wavelength, where the coupling takes place, varies depending on the refractive index of the constituents. These ENZ nanostructured optical fibers have many potential applications, for example, in ENZ nonlinear and magneto-optics, as in-fiber wavelength-dependent filters, and as subwavelength fluid channel for optical and bio-photonic sensing.
    Type: Grant
    Filed: February 3, 2020
    Date of Patent: September 20, 2022
    Assignee: Baylor University
    Inventors: Ho Wai Howard Lee, Khant Minn, Jingyi Yang, Oleksiy Anopchenko
  • Patent number: 11442329
    Abstract: An optical waveguide element including a substrate, an optical waveguide formed on the substrate, and an electrode for controlling a light wave propagating through the optical waveguide, in which the optical waveguide and the electrode have an intersection in which the optical waveguide and the electrode intersect with each other, and at the intersection, the electrode has a multilayer structure including a plurality of metal layers made of a metal material, and a resin layer made of a resin material is formed between the electrode and the substrate.
    Type: Grant
    Filed: November 27, 2020
    Date of Patent: September 13, 2022
    Assignee: SUMITOMO OSAKA CEMENT CO., LTD.
    Inventors: Masayuki Motoya, Toru Sugamata
  • Patent number: 11444696
    Abstract: Various embodiments of a micro-disc modulator as well as a silicon photonic device and an optoelectronic communication apparatus using the micro-disc modulator are described. In one aspect, a device includes a SOI substrate and a silicon photonic structure formed on a primary surface of the SOI substrate. The semiconductor substrate includes a silicon waveguide and a micro-disc modulator. The micro-disc modulator is adjacent to the silicon waveguide and has a top surface substantially parallel to the primary surface of the SOI substrate. The top surface of the micro-disc modulator includes one or more discontinuities therein. The micro-disc modulator may be a multi junction micro-disc modulator having two vertical p-n junctions with a single resonance frequency to achieve high-speed modulation and low-power consumption.
    Type: Grant
    Filed: July 8, 2014
    Date of Patent: September 13, 2022
    Assignee: PhotonIC International Pte. Ltd.
    Inventors: Birendra Dutt, Ashok Kapoor, Weiwei Song, Raj Rajasekharan
  • Patent number: 11435603
    Abstract: A thin film polymer device including a waveguide core surrounded by dielectric material positioned on a platform. The core has a passive input portion and a passive output portion joined by a necked down active portion. A layer of EO polymer material positioned on the dielectric material overlying the active portion of the core and the core, the EO polymer, and the dielectric material all having refractive indices with the refractive index of the EO polymer being higher than the refractive index of the dielectric material. Light progressing through the core from the passive input portion to the passive output portion transitions to the layer of EO polymer material as it enters the necked down active portion and transitions back to the core as it leaves the necked down active portion.
    Type: Grant
    Filed: October 14, 2020
    Date of Patent: September 6, 2022
    Assignee: LIGHTWAVE LOGIC INC.
    Inventors: Frederick J. Leonberger, Karen Liu, Michael Lebby
  • Patent number: 11429009
    Abstract: Electro-optic devices for classical and quantum microwave photonics are provided. In various embodiments, a device comprises: a waveguide; a first ring resonator; a second ring resonator, the second ring resonator evanescently coupled to the first ring resonator and to the waveguide; a first pair of electrodes, one of the first pair of electrodes disposed within the first ring resonator and the other of the first pair of electrodes disposed without the first ring resonator; a second pair of electrodes, one of the second pair of electrodes disposed within the second ring resonator and the other of the second pair of electrodes disposed without the second ring resonator; a microwave source electrically coupled to the first and second pairs of electrodes; a bias port electrically coupled to the first and second pairs of electrodes and configured to sweep a frequency band.
    Type: Grant
    Filed: April 30, 2019
    Date of Patent: August 30, 2022
    Assignee: President and Fellows of Harvard College
    Inventors: Mian Zhang, Marko Loncar, Cheng Wang
  • Patent number: 11402673
    Abstract: There is described an RF waveguide array. The array comprises a substrate comprising a plurality of optical waveguides, each waveguide being elongate in a first direction. An electrical RF transmission line array is located on a face of the substrate and comprises a plurality of signal electrodes and a plurality of ground electrodes, each electrode extending in the first direction. Each signal electrode is positioned to provide a signal to two respective waveguides. The ground electrodes include at least one intermediate ground electrode positioned between each pair of signal electrodes. Each intermediate ground electrode includes a portion extending into the substrate.
    Type: Grant
    Filed: December 21, 2017
    Date of Patent: August 2, 2022
    Assignee: Lumentum Technology UK Limited
    Inventors: Flavio Dell'Orto, Stefano Balsamo, Paolo Vergani
  • Patent number: 11405125
    Abstract: A TORminator module is disposed with a switch linecard of a rack. The TORminator module receives downlink electrical data signals from a rack switch. The TORminator module translates the downlink electrical data signals into downlink optical data signals. The TORminator module transmits multiple subsets of the downlink optical data signals through optical fibers to respective SmartDistributor modules disposed in respective racks. Each SmartDistributor module receives multiple downlink optical data signals through a single optical fiber from the TORminator module. The SmartDistributor module demultiplexes the multiple downlink optical data signals and distributes them to respective servers. The SmartDistributor module receives multiple uplink optical data signals from multiple servers and multiplexes them onto a single optical fiber for transmission to the TORminator module.
    Type: Grant
    Filed: July 12, 2019
    Date of Patent: August 2, 2022
    Assignee: Ayar Labs, Inc.
    Inventors: Vladimir Stojanovic, Alexandra Wright, Chen Sun, Mark Wade, Roy Edward Meade
  • Patent number: 11397342
    Abstract: An optical modulator according to the present invention comprises: a substrate which has electro-optic effects; an optical waveguide which is provided in the substrate; an optical fiber which is bonded to an end of the optical waveguide; a fixation member which is provided on an end part of the optical fiber; and an optical adhesive layer which bonds the optical fiber and the substrate to each other. The end of the optical waveguide is arranged in an end face of the substrate; the optical adhesive layer optically couples an end face of the optical fiber and an end of the optical waveguide with each other, while bonding the optical fiber, the fixation member and the substrate with each other; and the surface roughness of a surface of the fixation member, wherein the surface faces the end face of the substrate, is different from the surface roughness of an end face of the substrate, wherein the end face faces the surface of the fixation member.
    Type: Grant
    Filed: February 26, 2019
    Date of Patent: July 26, 2022
    Assignee: SUMITOMO OSAKA CEMENT CO., LTD.
    Inventors: Takatomo Itou, Yoshizumi Ishikawa, Shingo Takano
  • Patent number: 11385517
    Abstract: A Dual-polarization optical modulator that can be used to modulate light in both polarization states, in which the operating points of each polarization state can be set at any arbitrary point independently from each other. A novel architecture for an optically-controlled Phased-array beam forming system utilizing this unique dual-polarization is proposed to facilitate simple and practical implementation.
    Type: Grant
    Filed: November 22, 2017
    Date of Patent: July 12, 2022
    Assignee: EOSpace Inc.
    Inventor: Suwat Thaniyavarn
  • Patent number: 11378825
    Abstract: An electrical-optical modulator may include one or more optical waveguides to propagate one or more optical signals in a direction of propagation. An optical waveguide of the one or more optical waveguides may include a time delay section, a first modulation section preceding the time delay section in the direction of propagation, and a second modulation section following the time delay section in the direction of propagation. The first modulation section and the second modulation section may be configured to be associated with opposite modulation polarities, and the time delay section may be configured to delay a phase of the one more optical signals relative to the first modulation section. The electrical-optical modulator may include one or more signal electrodes to propagate one or more signals in the direction of propagation in order to modulate the one or more optical signals through electrical-optical interaction.
    Type: Grant
    Filed: March 31, 2020
    Date of Patent: July 5, 2022
    Assignee: Lumentum Operations LLC
    Inventors: Karl Kissa, David Glassner, Stephen Jones, Robert Griffin, John M. Heaton
  • Patent number: 11372307
    Abstract: Provided is an optical modulator having an optical modulation high frequency line through which a high frequency electrical signal can be efficiently input to an optical modulation region and which is in a broadband. High frequency lines of an optical modulator, that is, an input high frequency line, an optical modulation high frequency line, and an output high frequency line have a line configuration in which each of the input high frequency line and the output high frequency line is divided into a plurality of segments, and adjacent segments of the plurality of the segments have different characteristic impedances and propagation constants. The input high frequency line and the output high frequency line may be implemented by changing a width or a thickness of a signal electrode formed on a dielectric forming a micro-strip line between adjacent segments.
    Type: Grant
    Filed: March 6, 2019
    Date of Patent: June 28, 2022
    Assignee: NIPPON TELEGRAPH AND TELEPHONE CORPORATION
    Inventors: Nobuhiro Kikuchi, Eiichi Yamada, Josuke Ozaki, Yoshihiro Ogiso, Yuta Ueda, Shinsuke Nakano
  • Patent number: 11353728
    Abstract: An optical modulator includes a waveguide formed of a semiconductor and configured to allow light to propagate therethrough; a first electrode disposed on the waveguide and electrically connected to the waveguide; and a second electrode separated from the waveguide and electrically connected to the waveguide. An edge of the second electrode on a light entry side is located downstream of an edge of the first electrode on the light entry side in a propagation direction of the light.
    Type: Grant
    Filed: August 13, 2020
    Date of Patent: June 7, 2022
    Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventors: Hajime Tanaka, Tsutomu Ishikawa, Masataka Watanabe