Abstract: A substrate processing system configured to process a substrate includes a carry-in/out unit configured to carry the substrate from/to an outside thereof; a processing unit configured to process a processing surface of the substrate; a cleaning unit provided between the carry-in/out unit and the processing unit when viewed from a top, and configured to clean the processing surface after being processed in the processing unit; a first transfer unit stacked on top of the cleaning unit, and configured to transfer the substrate; and a second transfer unit provided between the processing unit and the first transfer unit when viewed from the top, and configured to transfer the substrate. The first transfer unit transfers the substrate between the carry-in/out unit and the second transfer unit. The second transfer unit transfers the substrate between the first transfer unit and the processing unit and between the processing unit and the cleaning unit.

Abstract: A development processing apparatus includes: a substrate holder that holds a substrate horizontally wherein the substrate includes a resist film; a rotator that rotates the substrate holder; first and second developer supplies that supply a developer to the substrate; and a liquid receiver that receives the developer from the substrate. The first developer supply is formed to have a length smaller than a diameter of the substrate. The second developer supply is formed to have a length equal to or larger than the diameter of the substrate. The liquid receiver includes first and second annular walls that are formed in an annular shape having a circular opening having a diameter larger than the diameter of the substrate. The first and second annular walls are movable up and down independently of each other, and a vertical distance between the first annular wall and the second annular wall is variable.

Abstract: A substrate cleaning apparatus includes: a support part configured to support a substrate by bring into contact with a rear surface of the substrate; an annular member disposed to surround a periphery of the substrate supported on the support part and including an inclined surface that is inclined with respect to a horizontal plane in a diametrical direction of the annular member; a rotation part configured to rotate the support part and the annular member; a first supply part configured to supply a cleaning liquid toward the rear surface of the substrate supported on the support part; and a second supply part configured to supply the cleaning liquid toward the inclined surface.

Abstract: A coating/developing device includes: a first laser unit that irradiates a coating liquid with laser light and acquires a state of the coating liquid based on a change in the laser light; and an irradiation propriety determination mechanism that determines whether the first laser unit irradiates the coating liquid with the laser light based on the coating liquid on a liquid bottle side of a position where the laser light is irradiated from the first laser unit in a flow path. The irradiation propriety determination mechanism includes: a second laser unit that acquires color information of the coating liquid; and a controller. The controller determines whether the color information of the coating liquid is predetermined color information that readily absorbs a wavelength of the light irradiated by the first laser unit and executes determining whether to irradiate the coating liquid with the laser light based on the determination result.

Abstract: A substrate inspection apparatus includes: a storage configured to store inspection image data obtained from a captured image of a periphery of a substrate on which a plurality of films is formed, and an inspection recipe; and an edge detector configured to detect a target edge as an edge of an inspection target film among the films on the basis of the inspection image data stored in the storage by using the inspection recipe stored in the storage. Each of edges of the films extends along the periphery of the substrate. The inspection recipe is configured by combining parameters each of which has one option specified among a plurality of options.

Abstract: A photolithography method includes dispensing a first liquid onto a first target layer formed over a first wafer through a nozzle at a first distance from the first target layer; capturing an image of the first liquid on the first target layer; patterning the first target layer after capturing the image of the first liquid; comparing the captured image of the first liquid to a first reference image to generate a first comparison result; responsive to the first comparison result, positioning the nozzle and a second wafer such that the nozzle is at a second distance from a second target layer on the second wafer; dispensing a second liquid onto the second target layer formed over the second wafer through the nozzle at the second distance from the second target layer; and patterning the second target layer after dispensing the second liquid.

Abstract: A transfer path is provided which is extended so as to be passed on a lateral side of a processing portion that processes a substrate. The substrate transferred between a container held by a holding unit and the processing portion passes through the transfer path. A first transfer robot carries the substrate into and out of the container held by the holding unit, and accesses a reception/delivery region arranged within the transfer path. A second transfer robot receives and delivers the substrate from and to the first transfer robot in the reception/delivery region, and carries the substrate into and out of the processing portion. A second transfer robot raising/lowering unit which raises and lowers the second transfer robot is arranged within the transfer path. The reception/delivery region and the second transfer robot raising/lowering unit are located between the first transfer robot and the second transfer robot.

Abstract: A fluid handling and delivery system useful in generating a fluid stream in the flow path of microfluidic device.

Abstract: A substrate treating apparatus includes an indexer division, stories, and a controller. Each of the stories includes a first rack, a treating section, and a main transport mechanism. The indexer division includes a carrier rack and a transport device. The transport device performs a feeding operation for transporting substrates from a carrier placed on the carrier rack to the first rack. The transport device further performs an inter-story transporting operation for transporting the substrates between two first racks provided for different stories.

Abstract: A second substrate transportation mechanism is generally set to transport a substrate from a substrate buffer unit to a FOUP placed on an opener. However, if a predetermined condition is satisfied, the second substrate transportation mechanism transports a substrate from the FOUP to the substrate buffer unit. That is, the second substrate transportation mechanism performs an operation different from an ordinary substrate transportation operation. Accordingly, a FOUP transportation mechanism can leave a specific FOUP at a placement position (opener) of the specific FOUP from when all the substrates are taken from the specific FOUP to when all the treated substrates are accommodated in the specific FOUP. Thus, the FOUP transportation mechanism can transport FOUPs except for the specific FOUP so that FOUP transportation efficiency can be enhanced.

Abstract: A substrate treating apparatus includes a treating section for treating substrates, and an interface section disposed adjacent the treating section and adjacent an exposing machine provided separately from the apparatus. The interface section has a first treating-section-side transport mechanism, a second treating-section-side transport mechanism, and an exposing-machine-side transport mechanism. Each of the first and second treating-section-side transport mechanisms is arranged to receive the substrates from the treating section, pass the substrates to the exposing-machine-side transport mechanism, receive the substrates from the exposing-machine-side transport mechanism and pass the substrates to the treating section.

Abstract: A transfer chamber configured to be used during semiconductor device manufacturing is described. Transfer chamber includes at least one first side of a first width configured to couple to one or more substrate transfer units (e.g., one or more load locks or one or more pass-through units), and at least a second set of sides of a second width that is different than the first width, the second set of sides configured to couple to one or more processing chambers. A total number of sides of the transfer chamber is at least seven. Transfers within the transfer chamber are serviceable by a single robot. Process tools and methods for processing substrates are described, as are numerous other aspects.

Abstract: A system for lithography patterning includes a first supply pipe for supplying a first solution, a second supply pipe for supplying a second solution, and a third supply pipe coupled to the first and second supply pipes for receiving the first and second solutions respectively and mixing the first and second solutions into a mixture. The third supply pipe couples to the first and second supply pipe at a junction. At the junction the first solution in the first supply pipe flows in a direction opposite to that of the second solution in the second supply pipe. The system further includes a first control unit coupled to the first supply pipe and configured to control a flow rate of the first solution, and a second control unit coupled to the second supply pipe and configured to control a flow rate of the second solution.

Abstract: A rotary plate for holding a substrate for a coating device, which rotary plate comprises a plurality of suction points, is intended to be characterized by an annular elevation, wherein a diameter of the annular elevation substantially corresponds to a diameter of the substrate.

Abstract: A substrate processing apparatus including a plurality of baking chambers stacked in a prescribed direction, each baking chamber carrying out heat treatment of a substrate in its interior, a processing unit having a liquid processing chamber separate from the baking chambers and carrying out liquid processing of the substrate using the processing liquid, and an enclosing isolating space that encloses the sides of the plurality of baking chambers and isolates the baking chambers from the surrounding area.

Abstract: A coating and developing method includes: a step that applies a resist containing a metal to a front surface of a substrate to form a resist film, and exposes the resist film; a developing step that supplies a developer to the front surface of the substrate to develop the resist film; and a step that forms, before the developing step, a first protective film on a peripheral part of the substrate on which the resist film is not formed, so as to prevent the developer from coming into contact with the peripheral part of the substrate, wherein the first protective film is formed at least on a peripheral end surface and a peripheral portion of a rear surface of the substrate in the peripheral part of the substrate.

Abstract: A substrate processing apparatus has a cup part for receiving processing liquid such as pure water which is splashed from a substrate. The cup part is formed of electrical insulation material. Hydrophilic treatment may be performed on an outer annular surface of the cup part. Water is held on at least one surface of the cup part while processing the substrate. The water may be substantially grounded. With the disclosed apparatus, charged potential of the cup part generated by splashing of pure water can be suppressed, without greatly increasing the manufacturing cost of the substrate processing apparatus. As a result, it is possible to prevent electric discharge from occurring on the substrate due to induction charging of the substrate, in application of the processing liquid onto the substrate.

Abstract: A lithographic process includes clamping a substrate onto a substrate support, measuring positions across the clamped substrate, and applying a pattern to the clamped substrate using the positions measured. A correction is applied to the positioning of the applied pattern in localized regions of the substrate, based on recognition of a warp-induced characteristic in the positions measured across the substrate. The correction may be generated by inferring one or more shape characteristics of the warped substrate using the measured positions and other information. Based on the one or more inferred shape characteristics, a clamping model is applied to simulate deformation of the warped substrate in response to clamping. A correction is calculated based on the simulated deformation.

Abstract: After a developing step is performed by feeding developer to the substrate, a second nozzle starts dispensation of a surfactant rinse liquid to a position away from the center of a rotating substrate. This operation is performed such that the center of the substrate does not enter into a reaching region of the substrate where the surfactant rinse liquid dispensed from the second nozzle firstly reaches. Accordingly, a point of the reaching region of the surfactant rinse liquid is dispersed, leading to suppression in locally smaller or larger line width of a resist pattern at the center and around the center of the substrate. Consequently, this achieves enhanced uniformity of the line widths of the resist pattern within a surface of the substrate during the rinse process.

Abstract: A substrate processing method in a substrate processing apparatus that has a cup part for receiving processing liquid such as pure water which is splashed from a substrate. The cup part is formed of electrical insulation material. Hydrophilic treatment may be performed on an outer annular surface of the cup part. Water is held on at least one surface of the cup part while processing the substrate. The water maybe substantially grounded. With the disclosed method, charged potential of the cup part generated by splashing of pure water can be suppressed, without greatly increasing the manufacturing cost of the substrate processing apparatus. As a result, it is possible to prevent electric discharge from occurring on the substrate due to induction charging of the substrate, in application of the processing liquid onto the substrate.

Abstract: Disclosed is a substrate processing method including a first surface cleaning step of supplying a first cleaning liquid containing water to a first surface of a substrate; a second surface cleaning step of supplying a second cleaning liquid containing water to a second surface that is opposite to the first surface; a water removal step of removing the water remaining on the second surface of the substrate in a state where the first surface is not exposed to outside air, after the second surface cleaning step; a water-repellency step of supplying a water-repellent agent to the first surface of the substrate after the water removal step; and a drying step of drying the substrate after the water-repellency step.

Abstract: A substrate processing apparatus includes a spin chuck that holds a substrate, a processing liquid supply unit that supplies a first processing liquid having first specific gravity and a second processing liquid having second specific gravity smaller than the first specific gravity to a surface to be processed of the substrate held by the spin chuck, a collection tank that stores the used first and second processing liquids that have been supplied to the substrate, and a processing liquid separating mechanism that separates the first processing liquid and the second processing liquid based on specific gravity, the first and second processing liquids being stored in the collection tank.

Abstract: Disclosed is a substrate processing method including a first surface cleaning step of supplying a first cleaning liquid containing water to a first surface of a substrate; a second surface cleaning step of supplying a second cleaning liquid containing water to a second surface that is opposite to the first surface; a water removal step of removing the water remaining on the second surface of the substrate in a state where the first surface is not exposed to outside air, after the second surface cleaning step; a water-repellency step of supplying a water-repellent agent to the first surface of the substrate after the water removal step; and a drying step of drying the substrate after the water-repellency step.

Abstract: An apparatus and a method for performing liquid treatment with respect to a substrate are provided. The apparatus includes a substrate supporting unit that supports and rotates the substrate, and a liquid supplying unit that supplies a liquid onto the substrate supported by the substrate supporting unit. The liquid supplying unit includes a nozzle unit that supplies a first treatment liquid and a second treatment liquid, and a moving unit that moves the nozzle unit. The nozzle unit has a first slit discharge port for discharging the first treatment liquid in a liquid curtain manner, a second slit discharge port for discharging the second treatment liquid in the liquid curtain manner, and a wetting liquid discharge port for discharging a pre-wetting liquid. The treatment liquids are selectively supplied depending on films formed on the substrate, thereby easily coping with the substrate having various types of films.

Abstract: An apparatus for processing wafer-shaped articles comprises a vacuum transfer module and an atmospheric transfer module. A first airlock interconnects the vacuum transfer module and the atmospheric transfer module. An atmospheric process module is connected to the atmospheric transfer module. A gas supply system is configured to supply gas separately and at different controlled flows to each of the atmospheric transfer module, the first airlock and the atmospheric process module, so as to cause: (i) a flow of gas from the first airlock to the atmospheric transfer module when the first airlock and the atmospheric transfer module are open to one another, and (ii) a flow of gas from the atmospheric transfer module to the atmospheric process module when the atmospheric transfer module and the atmospheric process module are open to one another.

Abstract: A substrate processing system is provided. The substrate processing system includes: a first transfer apparatus; at least two first accommodating units including an upper first accommodating unit and a lower first accommodating unit; multiple first substrate processing units, which are divided into at least a first group and a second group and arranged in a height direction; an upper second accommodating unit corresponding to the first group; an upper second transfer apparatus corresponding to the first group; a lower second accommodating unit corresponding to the second group; a lower second transfer apparatus corresponding to the second group; a first delivery apparatus corresponding to the first group; and a second delivery apparatus corresponding to the second group.

Abstract: Particles can be suppressed from adhering to a substrate. A substrate processing apparatus includes a carry-in/out chamber, a transfer chamber, and a delivery chamber. In the carry-in/out chamber, the substrate is carried in and out with respect to a carrier, and in the transfer chamber, a transfer path for the substrate toward a substrate processing chamber, where a predetermined process is performed on the substrate, is formed. Further, the delivery chamber is arranged between the carry-in/out chamber and the transfer chamber. Moreover, an internal pressure of the delivery chamber is higher than an internal pressure of the carry-in/out chamber and an internal pressure of the transfer chamber.

Abstract: An underlayer is formed to cover the upper surface of a substrate and a guide pattern is formed on the underlayer. A DSA film constituted by two types of polymers is formed in a region on the underlayer where the guide pattern is not formed. Thermal processing is performed while a solvent is supplied to the DSA film on the substrate. Thus, a microphase separation of the DSA film occurs. As a result, patterns made of the one polymer and patterns made of another polymer are formed. Exposure processing and development processing are performed in this order on the DSA film after the microphase separation such that the patterns made of another polymer are removed.

Abstract: Disclosed is a substrate liquid processing apparatus. The apparatus includes: a pure water supply unit (a rinse liquid supply unit) configured to supply pure water to a substrate; and a drying liquid supply unit configured to supply a drying liquid having a higher volatility than the pure water to the substrate. The substrate liquid processing apparatus is used to supply the drying liquid having the higher volatility, of which a part contains a silicon-based organic compound, to the substrate, from the drying liquid supply unit.

Abstract: In a substrate processing apparatus, with an internal space of a chamber brought into a pressurized atmosphere, an etching process is performed by continuously supplying a first processing liquid onto an upper surface of a substrate while rotating the substrate. It is thereby possible to suppress vaporization of the first processing liquid on the substrate and further suppress a decrease in the temperature of the substrate due to the heat of vaporization as it goes from a center portion of the substrate toward a peripheral portion thereof as compared with under normal pressure. As a result, it is possible to improve the uniformity in the temperature of the upper surface of the substrate during the etching process using the first processing liquid and improve the uniformity of etching over the entire upper surface of the substrate.

Abstract: A substrate processing apparatus has a cup part for receiving processing liquid such as pure water which is splashed from a substrate. The cup part is formed of electrical insulation material or semiconductor material. Hydrophilic treatment may be performed on an outer annular surface of the cup part and water may be held on the outer annular surface of the cup part while processing the substrate. With the disclosed apparatus, charged potential of the cup part generated by splashing of pure water can be suppressed, without greatly increasing the manufacturing cost of the substrate processing apparatus. As a result, it is possible to prevent electric discharge from occurring on the substrate due to induction charging of the substrate, in application of the processing liquid onto the substrate.

Abstract: An underlayer is formed to cover the upper surface of a substrate and a guide pattern is formed on the underlayer. A DSA film constituted by two types of polymers is formed in a region on the underlayer where the guide pattern is not formed. Thermal processing is performed while a solvent is supplied to the DSA film on the substrate. Thus, a microphase separation of the DSA film occurs. As a result, patterns made of the one polymer and patterns made of another polymer are formed. Exposure processing and development processing are performed in this order on the DSA film after the microphase separation such that the patterns made of another polymer are removed.

Abstract: Disclosed are a wafer carrier that keeps wafers under a constant pressure, at any preset value below or above the atmospheric pressure, to prevent wafer contaminations arising from atmospheric exposure in conventional wafer carriers, and also, a wafer transport system and method utilizing the same wafer carrier. The wafer carrier charged with a preset carrier pressure is transported and docked with an airlock of a wafer processing tool comprising the airlock, a vacuum transfer module, and a process chamber. The airlock adjusts, by a gas pump, inner pressure to equate successively with, first, the carrier pressure before opening the carrier door, and next, the vacuum transfer module pressure before opening the latter's door. The wafers are then transferred into the process chamber. After processing, the wafers are transferred back into the wafer carrier and charged with the preset carrier pressure before undocked and transported to the next wafer processing tool.

Abstract: The present disclosure provides various methods for tool condition monitoring, including systems for implementing such monitoring. An exemplary method includes receiving data associated with a process performed on wafers by an integrated circuit manufacturing process tool; and monitoring a condition of the integrated circuit manufacturing process tool using the data. The monitoring includes evaluating the data based on an abnormality identification criterion, an abnormality filtering criterion, and an abnormality threshold to determine whether the data meets an alarm threshold. The method may further include issuing an alarm when the data meets the alarm threshold.

Abstract: A substrate treating apparatus according to the present invention includes: an index unit having an index robot and a port on which a container containing a substrate is placed; a process treating unit having a development treating unit in which a first development treating chamber and a second development treating chamber for performing a substrate development process are arranged in divided layers; and a first path unit arranged between the development treating unit and the index unit, wherein the first development treating chamber includes a development module, a first heating module, and a first main transport robot arranged in a movement passage accessible to the development module and the first heating module, wherein the first path unit includes a second heating module, a first buffer module, a cooling module, a second buffer module, and a first buffer transport robot arranged in a movement passage accessible to the second heating module, the first buffer module, the cooling module and the second buffe

Abstract: A substrate processing apparatus includes a processing section and an exposure transport section. The exposure transport section includes a horizontal transport region and a plurality of vertical transport regions in a casing. The horizontal transport region is provided at the upper portion of the casing to extend in the X direction. A plurality of exposure devices are arranged below the horizontal transport region to be lined up in the X direction. A transport mechanism is provided in the horizontal transport region. The transport mechanism is configured to be capable of transporting a substrate between the processing section and the plurality of exposure devices.

Abstract: A semiconductor apparatus is provided. The semiconductor apparatus includes a wafer chuck configured to hold a wafer, and a first nozzle configured to dispense first chemical liquid onto the wafer. The semiconductor apparatus also includes a second nozzle configured to dispense second chemical liquid onto the wafer at a first dispensing time after the first nozzle stops dispensing the first chemical liquid. The semiconductor apparatus also includes an image device configured to take images of the first nozzle and the second nozzle in sequence, and a processing module configured to analyze the images. The processing module adjusts the first dispensing time when a first defect image shows the first chemical liquid and the second chemical liquid existing in a space close to the first and the second nozzles and flowing to the wafer.

Abstract: According to one embodiment, a developing apparatus and method comprises moving a first nozzle from a scan start position to a scan end position, with holding a second nozzle for supplying a rinse solution to be adjacent to the scan start position for the first nozzle, while supplying a developing solution from the first nozzle onto a wafer being rotated; and supplying the rinse solution from the second nozzle onto the wafer being rotated.

Abstract: A plating apparatus of performing a plating process by supplying a plating liquid onto a substrate includes a substrate holding/rotating device configured to hold and rotate the substrate; a discharging device configured to discharge the plating liquid toward the substrate; a plating liquid supplying device configured to supply the plating liquid to the discharging device; and a controller configured to control the discharging device and the plating liquid supplying device. Further, the discharging device includes a first nozzle having a discharge opening, and a second nozzle having a discharge opening configured to be positioned closer to a central portion of the substrate than the discharge opening of the first nozzle. Furthermore, the plating liquid supplying device is configured to set a temperature of the plating liquid supplied to the first nozzle to be higher than a temperature of the plating liquid supplied to the second nozzle.

Abstract: A production line oven includes a product gripping mechanism mounted above one side of the production line oven, a plurality of fixtures, a fixture gripping mechanism mounted under the product gripping mechanism, a lifting mechanism, and a conveyor mounted in other side of the production line oven. The product gripping mechanism includes a first guide rail, a support arm mounted to the first guide rail in sliding, and mechanical gripping members connected to the support arm. The fixture gripping mechanism includes a second guide rail and a clamp mechanism mounted to the second guide rail in sliding. The mechanical gripping members are configured to grip of a product. The fixture gripping mechanism is configured to grasp each the fixture to assemble or dismount the fixtures.

Abstract: The present disclosure provides a method for producing carbon nanoparticles at low cost and with good efficiency. According to the disclosure of the present description, a voltage is applied between a graphite positive electrode and a negative electrode in an aqueous medium to generate arc discharge in a gap. An inert gas is introduced into the gap from a cylinder bottle at a predetermined flow rate. In this manner, carbon nanoparticles can be produced from carbon steam that is generated in the gap as a result of the arc discharge.

Abstract: [Problem] To provide a substrate treatment device which can more efficiently heat and more efficiently use a treatment solution to treat the surface of a plate-shaped substrate.

Abstract: According to one embodiment, a substrate processing method is disclosed. The method can include treating a substrate with a first liquid. The substrate has a structural body formed on a major surface of the substrate. The method can include forming a support member supporting the structural body by bringing a second liquid into contact with the substrate wetted by the first liquid, and changing at least a portion of the second liquid into a solid by carrying out at least one of causing the second liquid to react, reducing a quantity of a solvent included in the second liquid, and causing at least a portion of a substance dissolved in the second liquid to be separated. The method can include removing the support member by changing at least a part of the support member from a solid phase to a gaseous phase, without passing through a liquid phase.

Abstract: An apparatus for transferring substrates within a lithography system, the lithography system comprising a substrate preparation unit for clamping a substrate onto a substrate support structure to form a clamped substrate, and an interface with a substrate supply system for receiving unclamped substrates. The apparatus comprises a body provided with a first set of fingers for carrying an unclamped substrate and a second set of fingers for carrying a substrate support structure, and the first set of fingers is located below the second set of fingers, and fingers of the first set of fingers have a different shape than the fingers of the second set of fingers.

Abstract: A substrate processing method includes rotating a substrate about a central axis thereof; starting irradiation of a surface of the substrate with soft X-rays; simultaneously with or after starting the irradiation of the surface of the substrate with the soft X-rays, starting supply of pure water onto the surface of the substrate; stopping the supply of the pure water onto the surface of the substrate; and then stopping the irradiation of the surface of the substrate with the soft X-rays.

Abstract: A loading port includes a housing and a plurality of stations defined in the housing configured to receive a front opening universal pod (FOUP). The loading port further includes a connector configured to receive an inert gas. At least one of the plurality of stations is configured to deliver the inert gas to the FOUP to purge an interior of the FOUP of moisture. A system including the loading port and a method of using the system are also described.

Abstract: According to one embodiment, a development processing apparatus including a film reduction amount calculation unit configured to calculate a film reduction amount of a to-be-exposed portion of the photosensitive film, a dimension prediction unit configured to calculate predicted pattern dimension when the developing process is performed in a standard development condition, a dimension correction amount calculation unit configured to calculate a pattern dimension correction amount, a corrected development condition derivation unit configured to derive a corrected development condition based on the calculated pattern dimension correction amount, and a developing mechanism configured to develop the photosensitive film in the derived corrected development condition.

Abstract: A method for processing a plurality of substrates after forming a photosensitive film on each substrate includes carrying each substrate into a placement buffer including a plurality of supporters by a first transport mechanism; taking out each substrate from the placement buffer to an interface by a second transport mechanism; carrying each substrate into the exposure device; carrying each substrate out of the exposure device into the placement buffer by the second transport mechanism; taking out each substrate from the placement buffer to the processing section by the first transport mechanism; performing development processing on each substrate; making each substrate stand by at the placement buffer based on timing at which the exposure device can accept each substrate; and making each substrate stand by at the placement buffer based on timing at which the developing device can accept each substrate.

Abstract: A periphery coating unit performs a scan-in process of moving a resist liquid nozzle 27 from an outside of an edge Wb of a wafer W to a position above a periphery region Wc of the wafer W while rotating the wafer W and discharging a resist liquid from the resist liquid nozzle 27; and a scan-out process of moving the resist liquid nozzle 27 from the position above the periphery region Wc of the wafer W to the outside of the edge Wb of the wafer W while rotating the wafer W and discharging the resist liquid from the resist liquid nozzle 27. Further, in the scan-out process, the resist liquid nozzle 27 is moved at a speed v2 lower than a speed v3 at which the resist liquid is moved to a side of the edge Wb of the wafer W.

Abstract: The present invention provides a color film developing apparatus, which is used to uniformly develop photoresist on the surface of a substrate as manufacturing a liquid crystal panel, comprising a developing chamber. The developing chamber comprises a first developing chamber and a second developing chamber respectively set inclined to a horizontal plane; the inclined directions of the first developing chamber and the second developing chamber inclined to the horizontal plane are contrary to each other. The color film developing apparatus according to the present invention can avoid the secondary development of the photoresist on the inclined substrate caused by the developer flowing from top to bottom when the substrate passes the developing chamber and proceeds to develop; enhance the uniformity of the development of the substrate; improve the uniformity of the in-plane process; narrow the differences; improve the quality of the product.