Abstract: The manufacturing method of a porous silicon material of the present disclosure includes a particle forming step of melting a raw material containing Al as a first element in an amount of 50% by mass or more and Si in an amount of 50% by mass or less to obtain a silicon alloy, a pore forming step of removing the first element from the silicon alloy to obtain a porous material, and a heat treatment step of heating the porous material to diffuse elements other than Si to a surface of the porous material.

Abstract: The manufacturing method of a porous silicon material of the present disclosure includes a particle forming step of melting a raw material containing Al as a first element in an amount of 50% by mass or more and Si in an amount of 50% by mass or less to obtain a silicon alloy, a pore forming step of removing the first element from the silicon alloy to obtain a porous material, and a heat treatment step of heating the porous material to diffuse elements other than Si to a surface of the porous material.

Abstract: Disclosed herein is an electrical connecting structure having nano-twins copper, including a first substrate having a first nano-twins copper layer and a second substrate having a second nano-twins copper layer. The first nano-twins copper layer includes a plurality of first nano-twins copper grains. The second nano-twins copper layer includes a plurality of second nano-twins copper grains. The first nano-twins copper layer is joined with the second nano-twins copper layer. At least a portion of the first nano-twins copper grains extend into the second nano-twins copper layer, or at least a portion of the second nano-twins copper grains extend into the first nano-twins copper layer.

Abstract: The present invention relates to a method for providing a braze alloy layered product comprising the following steps: —applying at least one silicon source and at least one boron source on at least a part of a surface of a substrate, wherein the at least one boron source and the at least one silicon source are oxygen free except for inevitable amounts of contaminating oxygen, and wherein the substrate comprises a parent material having a solidus temperature above 1100° C.; —heating the substrate having the applied boron source and the applied silicon source to a temperature lower than the solidus temperature of the parent material of the substrate; and cooling the substrate having the applied boron source and the applied silicon source, and obtaining the braze alloy layered product. The present invention relates further to a braze alloy layered product, a method for providing a brazed product, a method for providing a coated product, and uses of the braze alloy layered product.

Abstract: An alkaline battery includes a cathode, an alkaline electrolyte, and a copper-based anode which reduces hydrogen gassing without a protective coating or plating to less than 50% of the gas production observed using tin-plated 260 brass. An alloy for an anode which reduces hydrogen gassing without a protective coating or plating to less than 50% of the gas production observed using tin-plated 260 brass includes 0.01% to 9.0% tin, no more than 1% of phosphorus, no more than 1% of incidental elements and impurities, and the balance copper, in wt %. Another alloy for an anode which reduces hydrogen gassing without a protective coating or plating to less than 50% of the gas production observed using tin-plated 260 brass includes 1.0% to 40% zinc, about 0.01% to 5.0% tin, no more than 1% of phosphorus, no more than 1% of incidental elements and impurities, and the balance copper, in wt %.

Abstract: In a copper-based slide member in which needle-shaped Mn—Si based compounds are dispersed in a brass structure, 50% or more of a total number of the needle-shaped Mn—Si based compounds having lengths of 50 ?m or more in a major axis direction are constituted of a plurality of small particles. Thereby, even if the needle-shaped Mn—Si based compounds fall off during sliding, the small particles which constitute the needle-shaped Mn—Si based compounds may fall off. Thus, the frequency of falling off of the coarse needle-shaped Mn—Si based compound which damages a shaft and a bearing is decreased. Therefore, seizure hardly occurs.

Abstract: The distribution of Ni—Si compound grains is controlled to thereby improve the properties of Corson alloys. The copper alloy for electronic materials comprises 0.4 to 6.0% mass of Ni and 0.1 to 1.4% by mass of Si, with the balance being Cu and unavoidable impurities. The copper alloy comprising: small particles of Ni—Si compound having a particle size of equal to or greater than 0.01 ?m and smaller than 0.3 ?m; and large particles of Ni—Si compound having a particle size of equal to of greater than 0.3 ?m and smaller than 1.5 ?m. The number density of the small particles is 1 to 2000 pieces/?m2 and the number density of the large particles is 0.05 to 2 pieces/?m2.

Abstract: A piping component for controlling the flow of high-temperature fluids that includes a piping body having an inlet end and an outlet end, including methods of operating such components within a piping system. The piping body may be sized for fluids operating at temperatures from approximately 350° F. up to approximately 500° F., and 650° F. The piping body may also be sized for high-temperature fluids (e.g., steam) operating at pressures of up to approximately 400 psi, and 600 psi. In addition, the piping body is made from a silicon-copper alloy consisting essentially of less than 16% zinc, less than 0.25% lead, less than 0.25% bismuth, 2 to 6% silicon and a balance of copper (by weight).

Abstract: A method of making dispersion-strengthened alloy particles involves melting an alloy having a corrosion and/or oxidation resistance-imparting alloying element, a dispersoid-forming element, and a matrix metal wherein the dispersoid-forming element exhibits a greater tendency to react with a reactive species acquired from an atomizing gas than does the alloying element. The melted alloy is atomized with the atomizing gas including the reactive species to form atomized particles so that the reactive species is (a) dissolved in solid solution to a depth below the surface of atomized particles and/or (b) reacted with the dispersoid-forming element to form dispersoids in the atomized particles to a depth below the surface of said atomized particles. The atomized alloy particles are solidified as solidified alloy particles or as a solidified deposit of alloy particles.

Abstract: To obtain a copper alloy having a tensile strength of 700 N/mm2 or more and a conductivity of 60% IACS or more, a copper alloy of the present invention comprises from 0.8 mass % to 1.8 mass % of Co, from 0.16 mass % to 0.6 mass % of Si, and the balance of Cu and unavoidable impurities, in which a mass ratio of Co to Si (Co/Si) is between 3.0 and 5.0; a size of inclusions to be precipitated in the copper alloy is 2 ?m or less; and a total volume of the inclusions having a size of between 0.05 ?m and 2 ?m in the copper alloy is 0.5 vol % or less.

Abstract: A copper alloy having excellent sliding performance is produced without relying on lead or molybdenum. The copper alloy contains a sintered Cu5FeS4 material produced by sintering a raw material powder that comprises Cu, Fe and S and is produced by a gas atomizing method.

Abstract: Provided is a copper alloy sheet excellent in strengths, electroconductivity, and bending workability. The copper alloy contains Cr of 0.10% to 0.50%, Ti of 0.010% to 0.30%, and Si of 0.01% to 0.10%, where a ratio (in mass) of the Cr content to the Ti content is from 1.0 to 30, a ratio (in mass) of the Cr content to the Si content is from 3.0 to 30, with the remainder including copper and inevitable impurities. The copper alloy includes grains that have an average major axis length of 6.0 ?m or less and an average minor axis length of 1.0 ?m or less as measured on a microstructure of the copper alloy in a plane surface perpendicular to a transverse direction by FESEM-EBSP analysis.

Abstract: The present invention is directed to a formulation of one or more low silver containing alloys (including those with silver content below 50 weight %, “w %”) that show one of the group of distinct pink, yellow and green colors and further demonstrate enhanced resistance to tarnish and other beneficial features described herein.

Abstract: Copper alloys according to first to third aspects contain Mg at a content of 3.3% by atom to 6.9% by atom, with the balance substantially being Cu and unavoidable impurities, wherein an oxygen content is in a range of 500 ppm by atom or less, and either one or both of the following conditions (a) and (b) are satisfied: (a) when a Mg content is set to X % by atom, an electrical conductivity ? (% IACS) satisfies the following Expression (1), ??{1.7241/(?0.0347×X2+0.6569×X+1.7)}×100 (1); and (b) an average number of intermetallic compounds, which have grain sizes of 0.1 ?m or more and contain Cu and Mg as main components, is in a range of 1 piece/?m2 or less. A copper alloy according to a fourth aspect further contains one or more selected from a group consisting of Al, Ni, Si, Mn, Li, Ti, Fe, Co, Cr, and Zr at a total content of 0.01% by atom to 3.0% by atom, and satisfies the condition (b).

Abstract: Provided is a copper alloy plate that is for an FPC substrate and that has superior heat dissipation, repeated bending workability, shape retaining properties, and heat resistance. The copper alloy plate contains at least 0.01 mass % of the total of at least one element selected from the group consisting of Ag, Cr, Fe, In, Ni, P, Si, Sn, Ti, Zn, and Zr, contains no more than 1.0 mass % of Ag, no more than 0.08 mass % of Ti, no more than 2.0 mass % of Ni, no more than 3.5 mass % of Zn, and no more than 0.5 mass % of Cr, Fe, In, P, Si, Sn, and Zr by the total of the at least one element selected from the group, the remainder comprising Cu and impurities, has a conductivity of at least 60% IACS, has a tensile strength of at least 350 MPa, and has I(311)/IO(311) determined by X-ray diffraction in the thickness direction of the plate surface that satisfies the formula I(311)/IO(311)?0.5.

Abstract: The invention relates to a slide bearing composite material having at least one carrier layer and a sintered bearing metal layer. The sintered bearing metal layer is designed in at least one layer region as a gradient layer.

Abstract: Exemplary embodiments are directed to a contact material for a vacuum interrupter, and method of making the contact material. In achieving precise control of the Si concentration of Cu/Cr contact materials, the exemplary contact material has a chromium content which is above 10 wt. % and that the material is doped with silicon below 0.2 wt. % (2000 ppm Si) and the remainder is copper Cu.

Abstract: Combinations of materials are described in which high energy density active materials for negative electrodes of lithium ion batteries. In general, metal alloy/intermetallic compositions can provide the high energy density. These materials can have moderate volume changes upon cycling in a lithium ion battery. The volume changes can be accommodated with less degradation upon cycling through the combination with highly porous electrically conductive materials, such as highly porous carbon and/or foamed current collectors. Whether or not combined with a highly porous electrically conductive material, metal alloy/intermetallic compositions with an average particle size of no more than a micron can be advantageously used in the negative electrodes to improve cycling properties.

Abstract: A Co—Si based copper alloy plate, comprising: Co: 0.5 to 3.0% by mass, Si: 0.1 to 1.0% by mass and the balance Cu with inevitable impurities, wherein the Co—Si based copper alloy plate satisfies the relationship {(60 degree specular gloss G(RD) in a rolling direction)?(60 degree specular gloss G(TD) in a direction transverse to rolling direction)}?90%.

Abstract: A copper alloy sheet material, having a composition containing any one or both of Ni and Co in an amount of 0.5 to 5.0 mass % in total, and Si in an amount of 0.3 to 1.5 mass %, with the balance of copper and unavoidable impurities, wherein an area ratio of cube orientation {0 0 1} <1 0 0> is 5 to 50%, according to a crystal orientation analysis in EBSD measurement.

Abstract: Cu—Co—Si-based alloy strip, which has not only an excellent balance between strength and electrical conductivity but also suppressed hanging curl, is provided. The copper alloy strip for electronic materials comprises 0.5-2.5 mass % of Co, 0.1-0.7 mass % of Si, the balance Cu and inevitable impurities, wherein, from a result obtained from measurement of an X ray diffraction pole figure, using a rolled surface as a reference plane, the following (a) is satisfied. (a) A diffraction peak height at ? angle 120° among diffraction peak intensities by ? scanning at ?=25° in a {200} pole figure is at least 10 times that of standard copper powder.

Abstract: A Cu—Si—Co-based alloy having an enhanced spring limit is provided. The copper alloy comprises 0.5-2.5 mass % of Co, 0.1-0.7 mass % of Si, the balance Cu and inevitable impurities, wherein, from a result obtained from measurement of an X ray diffraction pole figure, using a rolled surface as a reference plane, a peak height at ? angle of 90° among diffraction peaks in {111} Cu plane with respect to {200} Cu plane by ? scanning at ?=35° is at least 2.5 times that of a standard copper powder.

Abstract: A pressure resistant and corrosion resistant copper alloy contains 73.0 mass % to 79.5 mass % of Cu and 2.5 mass % to 4.0 mass % of Si with a remainder composed of Zn and inevitable impurities, in which the content of Cu [Cu] mass % and the content of Si [Si] mass % have a relationship of 62.0?[Cu]?3.6×[Si]?67.5. In addition, the area fraction of the ? phase “?”%, the area fraction of a ? phase “?”%, the area fraction of a ? phase “?”%, the area fraction of the ? phase “?”%, and the area fraction of a ? phase “?”% satisfy 30?“?”?84, 15?“?”?68, “?”+“?”?92, 0.2?“?”/“?”?2, “?”?3, “?”?5, “?”+“?”?6, 0?“?”?7, and 0?“?”+“?”+“?”?8. Also disclosed is a method of manufacturing a brazed structure made of the above pressure resistant and corrosion resistant copper alloy.

Abstract: To provide a copper alloy sheet excellent in the balance of strength and electroconductivity and excellent in the balance of strength and bending workability also. A copper alloy contains predetermined amount of Cr, Ti, and Si so as to satisfy a mass ratio of the Cr to the Ti: 1.0?(Cr/Ti)?30, and a mass ratio of the Cr to the Si: 3.0?(Cr/Si)?30, the remainder including copper and unavoidable impurities, in which 70% or more out of total amount of Cr, Ti and Si contained in the copper alloy is precipitated, a number of piece of precipitates with 300 nm or more circle equivalent diameter observed by a SEM in a region of 25 ?m in the thickness direction from the surface of the copper alloy×40 ?m in the cross-sectional direction in a cross section in the width direction of the copper alloy is 50 pieces or less, and an average circle equivalent diameter of precipitates with less than 300 nm circle equivalent diameter observed by a TEM on the surface of the copper alloy is 15 nm or less.

Abstract: Disclosed is a copper-cobalt-silicon (Cu—Co—Si) alloy for electronic material with an improved balance among electro-conductivity, strength and bend formability, which includes 0.5 to 3.0% by mass of Co, 0.1 to 1.0% by mass of Si, and the balance of Cu and inevitable impurities, having a ratio of mass percentages of Co and Si (Co/Si) given as 3.5?Co/Si?5.0, having an average particle size of second phase particles, within the range of the particle size of 1 to 50 m seen in a cross-section taken in parallel with the direction of rolling, of 2 to 10 nm, and having an average distance between the adjacent second phase particles of 10 to 50 nm.

Abstract: Copper alloys exhibiting enhanced oxidation resistance are provided by adding an amount of sulfur that is effective to enhance oxidative resistance. Such sulfur addition can be achieved by combining elemental forms of copper and sulfur and heating the mixture to form a molten alloy, or by forming a sulfur-rich pre-mix that is added to a base alloy composition. Forming a pre-mix provides improved homogeneity and distribution of the sulfur predominantly in the form of a metal sulfide.

Abstract: A copper alloy having excellent sliding performance is produced without relying on lead or molybdenum. The copper alloy contains a sintered Cu5FeS4 material produced by sintering a raw material powder that comprises Cu, Fe and S and is produced by a gas atomizing method.

Abstract: A rolled copper foil consisted of at least either of silicon (Si) and iron (Fe), boron (B), silver (Ag), oxygen (O) of 0.002 mass % or less, and a balance consisted of copper (Cu) and inevitable impurities.

Abstract: A Cu—Fe—P alloy sheet that is provided with the high strength and with the improved resistance of peel off of oxidation film, in order to deal with problems such as package cracks and peeling, is provided. A copper alloy sheet for electric and electronic parts according to the present invention is a copper alloy sheet containing Fe: 0.01 to 0.50 mass % and P: 0.01 to 0.15 mass %, respectively, with the remainder of Cu and inevitable impurities. A centerline average roughness Ra is 0.2 ?m or less and a maximum height Rmax is 1.5 ?m or less, and Kurtosis (degree peakedness) Rku of roughness curve is 5.0 or less, in measurement of the surface roughness of the copper alloy sheet in accordance with JIS B0601.

Abstract: A copper alloy material for electric/electronic parts, containing Co and Si as additive elements, wherein, a compound A is dispersed, which is composed of Co and Si and has an average particle diameter of 5 nm or more but less than 50 nm, and at least one compound is dispersed, which is selected from: a compound B which does not contain one or any of Co and Si and has an average particle diameter from 50 to 500 nm, a compound C which contains both of Co and Si and another element and has an average particle diameter from 50 to 500 nm, and a compound D which is composed of Co and Si and has an average particle diameter from 50 to 500 nm; a grain size of the copper alloy matrix is 3 to 35 ?m; and an electrical conductivity is 50% IACS or more.

Abstract: A copper alloy material for electric/electronic parts, containing Co in an amount of 0.7 to 2.5 mass % and Si in an amount that gives a mass ratio of Co and Si (Co/Si ratio) within the range from 3.5 to 4.0, with the balance being Cu and unavoidable impurities, wherein the grain size is 3 to 15 ?m.

Abstract: A melt-solidified substance includes melt-solidified portions formed by welding, build-up spray welding, metallizing or fusing. The melt-solidified portions have the alloy composition containing Zr: 0.0005 to 0.05 mass %, P: 0.01 to 0.34 mass %, Cu: the remainder and satisfying the relationship between the contents of P and Zr, [P]/[Zr]=0.3 to 20, and the mean grain size in the macrostructure after melt-solidification is 300 ?m or less. If Fe and/or Ni are contained in the melt-solidified portion as inevitable impurities, the content of Fe or Ni is restricted to be 0.3 mass % or less when either Fe or Ni is contained, and the total content of Fe and Ni is restricted to be 0.4 mass % or less when both Fe and Ni are contained.

Abstract: This is to provide a build-up wear-resistant copper-based alloy, which is advantageous for enhancing the cracking resistance and machinability, which is appropriate for cases of building up to form built-up layers especially, and which is equipped with the wear resistance, cracking resistance and machinability combinedly in a well balanced manner. A build-up wear-resistant copper-based alloy is characterized in that it has a composition, which includes nickel: 5.0-20.0%; silicon: 0.5-5.0%; manganese: 3.0-30.0%; and an element, which combines with manganese to form a Laves phase and additionally to form silicide: 3.0-30.0%; by weight %, and inevitable impurities; and additionally the balance being copper. The element can be one member or two or more members of titanium, hafnium, zirconium, vanadium, niobium and tantalum.

Abstract: A copper alloy material consists of, by mass % Ti: 0.01-2.5%, Cr: 0.01-0.5%, Fe: 0.01% or more and less than 1%, and the balance Cu and impurities. The copper alloy possesses excellent strength, electrical conductivity, and workability without containing any environmentally harmful elements. These properties are attained by control of the total number and the diameter of precipitates and inclusions having a diameter of 1 ?m, and control of the relationship between tensile strength TS (MPa) and electrical conductivity, IACS (%). The copper alloy material is a sheet and the relationship between tensile strength and the bending workability in a bad way B90 of the copper alloy material as well as the relationship between elongation and tensile strength are also controlled with respect to each other for property improvement.

Abstract: The present invention relates to a nanocrystalline metallic material, particularly to nano-twin copper material with ultrahigh strength and high electrical conductivity and its preparation method. High-purity polycrystalline Cu material with a microstructure of roughly equiaxed submicron-sized grains (300-1000 nm) has been produced by pulsed electrodeposition technique, by which high density of growth-in twins with nano-scale twin spacing were induced in the grains. Inside each grain, there are high densities of growth-in twin lamellae. The twin lamellae with the same orientations are inter-parallel, and the twin spacing ranges from several nanometers to 100 nm with a length of 100-500 nm. This Cu material invented has more excellent performance than existing ones.

Abstract: Compositions are disclosed comprising mercury, titanium, copper and one or more of tin, chromium and silicon, useful for the release of mercury in applications requiring the same, in particular in fluorescent lamps. A process for the preparation of these compositions is also disclosed.

Abstract: A Cu—Fe—P copper alloy sheet which has the high strength and the high electrical conductivity compatible with excellent bendability is provided. The Cu—Fe—P copper alloy sheet contains 0.01% to 3.0% of Fe and 0.01% to 0.3% of P on a percent by mass basis wherein the orientation density of the Brass orientation is 20 or less and the sum of the orientation densities of the Brass orientation, the S orientation, and the Copper orientation is 10 or more and 50 or less in the microstructure of the copper alloy sheet.

Abstract: To obtain a copper alloy having a tensile strength of 700 N/mm2 or more and a conductivity of 60% IACS or more, a copper alloy of the present invention comprises from 0.8 mass % to 1.8 mass % of Co, from 0.16 mass % to 0.6 mass % of Si, and the balance of Cu and unavoidable impurities, in which a mass ratio of Co to Si (Co/Si) is between 3.0 and 5.0; a size of inclusions to be precipitated in the copper alloy is 2 ?m or less; and a total volume of the inclusions having a size of between 0.05 ?m and 2 ?m in the copper alloy is 0.5 vol % or less.

Abstract: A product resistant or immune to carburization, metal dusting, coking, oxidation, and having sufficient mechanical strength for use at temperatures greater than 400° C. The product consists of a load-bearing member and a corrosion resistant member, wherein the corrosion resistant member is a Cu—Al-alloy comprising Si. The product can be used in CO-containing atmospheres, and/or hydrocarbon containing atmospheres or solid carbon containing processes. A method of resisting carburization, metal dusting, coking and oxidation is also disclosed.

Abstract: A copper-base alloy with increased melting point above 1000° C., which is resistant or immune to carburization, metal dusting and coking, resistant to oxidation at elevated temperatures. The alloy has the following composition (in weight-%): Al 4–15, Si 0.1–6, Mo 0.5–40, W 0–40, where the total of Mo and W do not exceed 40%, one or more of the group of Rare Earth Metals (REM), such as yttrium, hafnium, zirconium, lanthanum and/or cerium, up to 1.0 weight-% of each element or a total of maximum 3.0 weight-%, Cu balance and normally occurring alloying additions and impurities. A method for the alloy's production, and the alloy's use as construction components in CO-containing atmospheres, ammonia containing atmospheres, and/or hydrocarbon containing atmospheres or solid carbon containing processes, are also disclosed.

Abstract: A copper alloy that consists essentially of, by weight, from 0.15% to 0.7% of chromium, from 0.005% to 0.3% of silver, from 0.01% to 0.15% of titanium, from 0.01% to 0.10% of silicon, up to 0.2% of iron, up to 0.5% of tin, and the balance copper and inevitable impurities has high strength, a yield strength in excess of 80 ksi, and high electrical conductivity, in excess of 80% IACS. The alloy further has substantially isotropic bend characteristics when the processing route includes a solution heat anneal above 850° C. and subsequent cold rolling into sheet, strip or foil interspersed by bell annealing. As a result, the alloy is particularly suited for forming into box-type electrical connectors for both automotive or multimedia applications. The alloy is also suitable for forming into a rod, wire or section.

Abstract: A copper alloy that consists essentially of, by weight, from 0.15% to 0.7% of chromium, from 0.005% to 0.3% of silver, from 0.01% to 0.15% of titanium, from 0.01% to 0.10% of silicon, up to 0.2% of iron, up to 0.5% of tin, and the balance copper and inevitable impurities has high strength, a yield strength in excess of 80 ksi, and high electrical conductivity, in excess of 80% IACS. The alloy further has substantially isotropic bend characteristics when the processing route includes a solution heat anneal above 850° C. and subsequent cold rolling into sheet, strip or foil interspersed by bell annealing. As a result, the alloy is particularly suited for forming into box-type electrical connectors for both automotive or multimedia applications. The alloy is also suitable for forming into a rod, wire or section.

Abstract: The material for a metal strip for manufacturing electrical contact component parts has, expressed in percent by weight, the following composition: nickel (Ni) 0.5-3.5% silicon (Si) 0.08-1.0%  tin (Sn) 0.1-1.0% zinc (Zn) 0.1-1.0% zirconium (Zr) 0.005-0.2%  silver (Ag) 0.02- 0.5%  The remainder is copper and includes impurities caused by smelting.

Abstract: The free-cutting copper alloy according to the present invention contains a greatly reduced amount of lead in comparison with conventional free-cutting copper alloys, but provides industrially satisfactory machinability. The free-cutting alloys comprise 69 to 79 percent, by weight, of copper, 2.0 to 4.0 percent, by weight, of silicon, 0.02 to 0.4, by weight, of lead, and the remaining percent, by weight, of zinc.

Abstract: The present invention pertains to systems and methods for reducing the agglomeration of copper deposited by physical vapor deposition. More specifically, the invention pertains to systems and methods for depositing copper seed layers on a semiconductor wafer. The invention involves the use of an anti-agglomeration agent, so that the copper deposition is completed in an even, continuous and conformal manner.

Abstract: The present invention is directed to brazing filler metals that can be used in the infiltration brazing of porous matrix materials without the need for a flux. The brazing filler metals contain two different Group II metals and a third metal of Group 9 and 10. A particular brazing filler metal of the invention contains silver, copper, and nickel. The invention is also directed to composite materials formed by infiltration of the brazing material into a porous matrix, and to methods for preparing the composite materials. The invention is further directed to composite articles fabricated from composite materials, including steel bearings or bushings, and to methods of preparing the composite articles.

Abstract: A lead-free free-cutting copper alloy having 69 to 79 percent, by weight, of copper; greater than 3 percent, by weight, of silicon; and a remaining percent, by weight, of zinc. The alloy preferable has greater than 3.0 percent and less than or equal to 4.0 percent, by weight, of silicon; and at least one element selected from among 0.02 to 0.4 percent, by weight, of bismuth, 0.02 to 0.4 percent, by weight, of tellurium, and 0.02 to 0.4 percent, by weight, of selenium. The alloy also preferable has at least one element selected from among 0.3 to 3.5 percent, by weight, of tin, 1.0 to 3.5 percent, by weight, of aluminum, and 0.02 to 0.25 percent, by weight, of phosphorus. In further embodiments, the alloy has at least one element selected from among 0.02 to 0.15 percent, by weight, of antimony, and 0.02 to 0.15 percent, by weight, of arsenic.

Abstract: The present invention provides a method and apparatus for forming a copper layer on a substrate, preferably using a sputtering process. The sputtering process involves bombarding a conductive member of enhanced hardness with ions to dislodge the copper from the conductive member. The hardness of the target may be enhanced by alloying the copper conductive member with another material and/or mechanically working the material of the conductive member during its manufacturing process in order to improve conductive member and film qualities. The copper may be alloyed with magnesium, zinc, aluminum, iron, nickel, silicon and any combination thereof.

Abstract: A cutting edge which has improved resistance to scratching wear, such resistance being required for cutting edges for snow removal, which has good performance to increase e.g., compressed snow rate, and which can be manufactured at comparatively low cost. The cutting edge comprises a hard member provided at the leading edge of an edge body, the hard member comprising (i) a hard material containing hard grains which are dispersed with high filling density and integrally combined by a metal having a lower melting point than the hard grains and (ii) a protective member which covers at least the front face of the hard material as viewed in the travel direction of the blade and which has impact resistance.

Abstract: A high-strength Cu based alloy, consists of:Ni: 0.5 to 2.0%;Sn: 1.2 to 2.5%;Si: 0.04 to 0.1%;Zn: 0.1 to 1%;Mg: 0.0001 to 0.02%;Mn: 0.0001 to 0.1%;P: 0.0001 to 0.02%; andCu and inevitable impurities: the balance,wherein the total content of Mg, Mn and P is 0.001 to 0.12%. The Cu based alloy is suitable for use as a material of electrical and electronic parts, and free from smutting during pretreatment for plating thereof.