Silicon Base Alloy Containing Metal Patents (Class 420/578)
  • Patent number: 10207920
    Abstract: There are provided an easily producible catalyst particle-holding structure used for production of carbon nanotubes, and a method for producing the same. The method for producing the catalyst particle-holding structure of the present invention used for production of carbon nanotubes includes a step of forming a catalyst particle forming layer containing Si, Al, and Fe, and a step of performing a heat treatment on the catalyst particle forming layer in an atmosphere containing oxygen, to form catalyst particles containing Fe. The catalyst particles are held by the catalyst particle forming layer so that the catalyst particles are partially embedded in the catalyst particle forming layer. The size and the number of the catalyst particles containing Fe are controlled by adjusting the amount of oxygen contained in the atmosphere for the heat treatment. Thus, the catalyst particle-holding structure is formed easily.
    Type: Grant
    Filed: July 29, 2015
    Date of Patent: February 19, 2019
    Assignee: Nitta Corporation
    Inventors: Takuji Komukai, Yutaka Shimomoto, Hiromi Teruhira
  • Patent number: 9556498
    Abstract: A method for producing spheroidal graphite cast iron having a specific final composition includes: subjecting a molten iron to a spheroidization treatment using a spheroidizing agent of an Fe—Si—Mg—Ca-based alloy containing no rare earth element; conducting an inoculation treatment using a first Fe—Si-based inoculant; and conducting a pouring inoculation treatment with a given amount of a second Fe—Si-based inoculant containing 45-75% of Si, 1-3% of Ca, and 15 ppm or less of Ba.
    Type: Grant
    Filed: October 5, 2012
    Date of Patent: January 31, 2017
    Assignee: AKEBONO BRAKE INDUSTRY CO., LTD.
    Inventors: Takao Horiya, Tsukasa Baba, Takuya Tokiyama, Takashi Sato, Hiroshi Idei
  • Publication number: 20150050183
    Abstract: Silicon eutectic alloy compositions and methods for making the same are disclosed. In one approach, a method may include using a glass carbon container to restrict contamination of the eutectic alloy melt. In an alternative approach, a method may include using a container having aluminum. The aluminum in the container may provide aluminum that is incorporated into the silicon eutectic alloy. Silicon eutectic bodies made by such methods are also disclosed.
    Type: Application
    Filed: October 29, 2014
    Publication date: February 19, 2015
    Inventors: ALITHA ALLBEE, ZACHARY BAUER, JEREMY BEEBE, MATTHEW GAVE, VASGEN SHAMAMIAN, RANDALL SIEGEL, JOSEPH SOOTSMAN, JAMES YOUNG
  • Patent number: 8808658
    Abstract: Methods for producing nanostructured silicon and silicon-germanium via solid state metathesis (SSM). The method of forming nanostructured silicon comprises the steps of combining a stoichiometric mixture of silicon tetraiodide (SiI4) and an alkaline earth metal silicide into a homogeneous powder, and initating the reaction between the silicon tetraiodide (SiI4) with the alkaline earth metal silicide. The method of forming nanostructured silicon-germanium comprises the steps of combining a stoichiometric mixture of silicon tetraiodide (SiI4) and a germanium based precursor into a homogeneous powder, and initiating the reaction between the silicon tetraiodide (SiI4) with the germanium based precursors.
    Type: Grant
    Filed: June 8, 2011
    Date of Patent: August 19, 2014
    Assignees: California Institute of Technology, The Regents of the University of California
    Inventors: Richard B. Kaner, Sabah K. Bux, Jean-Pierre Fleurial, Marc Rodriguez
  • Patent number: 8795587
    Abstract: Ferrous metallurgy for producing an alloy for reducing, doping and modifying steel is disclosed. The quality of the steel treated with the inventive alloy is improved owing to the deep reduction and modification of non-metallic impurities and the simultaneous microalloying of steel with barium, titanium and vanadium. Barium, titanium and vanadium are added into the inventive alloy, which contains aluminum, silicon, calcium, carbon and iron, with the following component ratio, in mass %: 45.0-63.0 silicon, 10.0-25.0 aluminum, 1.0-10.0 calcium, 1.0-10.0 barium, 0.3-5.0 vanadium, 1.0-10.0 titanium, 0.1-1.0 carbon, the rest being iron.
    Type: Grant
    Filed: September 18, 2008
    Date of Patent: August 5, 2014
    Assignee: RSE the National Center on Complex Processing of Mineral Raw Material of the Republic Kazakhstan
    Inventors: Nursultan Abishevich Nazarbaev, Vladimir Sergeevich Shkolnik, Abdurassul Aldashevich Zharmenov, Manat Zhaksybergenovich Tolymbekov, Sailaubay Omarovich Baisanov
  • Publication number: 20140186102
    Abstract: A method for joining, assembling, at least two parts made of silicon carbide-based materials by non-reactive brazing is provided. According to the method, the parts are contacted with a non-reactive brazing composition, the assembly formed by the parts and the brazing composition is heated to a brazing temperature sufficient to melt the brazing composition totally or at least partly, and the parts and brazing composition are cooled to that, after solidification of the brazing composition, a moderately refractory joint is formed; wherein the non-reactive brazing composition is an alloy comprising, in atomic percentages, 45% to 65% silicon, 28% to 45% nickel and 5% to 15% aluminium. A brazing composition as defined above is provided. A brazing paste, suspension comprising a powder of said brazing composition and an organic binder as well as a joint and assembly obtained the foregoing method are also provided.
    Type: Application
    Filed: March 7, 2014
    Publication date: July 3, 2014
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Valérie Chaumat, Jean-Francois Henne, Nadia Miloud-Ali
  • Patent number: 8763883
    Abstract: A method for assembling at least two parts made of silicon carbide-based materials by non-reactive brazing is disclosed. The two parts are contacted with a non-reactive brazing composition. The assembly formed by the parts and the brazing composition is heated to a brazing temperature sufficient to melt the brazing composition. The parts and the brazing composition are cooled so that, after solidification of the brazing composition, a moderately refractory joint is formed. The non-reactive brazing composition is a binary alloy composed, in mass percentages, of about 46% to 99% silicon and 54% to 1% neodymium.
    Type: Grant
    Filed: September 3, 2010
    Date of Patent: July 1, 2014
    Assignee: Commissariat à l'énergie atomique et aux énergies alternatives
    Inventors: Valérie Chaumat, Jean-François Henne
  • Patent number: 8697284
    Abstract: A negative electrode material is provided for lithium ion batteries offering a high capacity and a long cycle life. It is an alloy material consisting essentially of Si, Al, M1, and M2 wherein M1 is a transition metal, and M2 is a metal element of Groups 4 and 5, and having an Si—Al-M1-M2 alloy phase constituting fine crystal grains and an Si phase precipitating along crystal grain boundaries to form a network.
    Type: Grant
    Filed: November 13, 2012
    Date of Patent: April 15, 2014
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Naofumi Shinya, Takehisa Minowa
  • Publication number: 20140099232
    Abstract: A method of forming a sheet of semiconductor material utilizes a system. The system comprises a first convex member extending along a first axis and capable of rotating about the first axis and a second convex member spaced from the first convex member and extending along a second axis and capable of rotating about the second axis. The first and second convex members define a nip gap therebetween. The method comprises applying a melt of the semiconductor material on an external surface of at least one of the first and second convex members to form a deposit on the external surface of at least one of the first and second convex members. The method further comprises rotating the first and second convex members in a direction opposite one another to allow for the deposit to pass through the nip gap, thereby forming the sheet of semiconductor material.
    Type: Application
    Filed: March 15, 2013
    Publication date: April 10, 2014
    Applicant: Corning Incorporated
    Inventors: Samir Biswas, Douglass Lane Blanding, Glen Bennett Cook, Prantik Mazumder, Kamal Kishore Soni, Balram Suman
  • Publication number: 20140099229
    Abstract: A negative electrode active material for an electric device includes an alloy containing Si in a range of greater than or equal to 27% by mass and less than 100% by mass, Sn in a range of greater than 0% by mass and less than or equal to 73% by mass, V in a range of greater than 0% by mass and less than or equal to 73% by mass, and inevitable impurities as a residue. The negative electrode active material can be obtained with, for example, a multi DC magnetron sputtering apparatus by use of Si, Sn, and V as targets. An electric device using the negative electrode active material can achieve long cycle life and ensure a high capacity and cycle durability.
    Type: Application
    Filed: March 9, 2012
    Publication date: April 10, 2014
    Inventors: Manabu Watanabe, Masao Yoshida, Osamu Tanaka
  • Publication number: 20140086788
    Abstract: A negative electrode active material for an electric device includes an alloy containing Si in a range from greater than or equal to 17% by mass to less than 90% by mass, Ti in a range from 10% by mass to 83% by mass exclusive, Ge in a range from 0% by mass to 73% by mass exclusive, and inevitable impurities as a residue. The negative electrode active material can be obtained with a multi DC magnetron sputtering apparatus by use of, for example, Si, Ti and Ge as targets. An electric device employing the negative electrode active material can achieve long cycle life, and ensure a high capacity and improved cycle durability.
    Type: Application
    Filed: May 22, 2012
    Publication date: March 27, 2014
    Inventors: Manabu Watanabe, Masao Yoshida
  • Patent number: 8678269
    Abstract: A method for joining, assembling, at least two parts made of silicon carbide-based materials by non-reactive brazing is provided. According to the method, the parts are contacted with a non-reactive brazing composition, the assembly formed by the parts and the brazing composition is heated to a brazing temperature sufficient to melt the brazing composition totally or at least partly, and the parts and brazing composition are cooled to that, after solidification of the brazing composition, a moderately refractory joint is formed; wherein the non-reactive brazing composition is an alloy comprising, in atomic percentages, 45% to 65% silicon, 28% to 45% nickel and 5% to 15% aluminum. A brazing composition as defined above is provided. A brazing paste, suspension comprising a powder of said brazing composition and an organic binder as well as a joint and assembly obtained the foregoing method are also provided.
    Type: Grant
    Filed: March 11, 2011
    Date of Patent: March 25, 2014
    Assignee: Commissariat a l'Energie Atomique et aux Energies Alternatives
    Inventors: Valérie Chaumat, Jean-Francois Henne, Nadia Miloud-Ali
  • Patent number: 8673490
    Abstract: Combinations of materials are described in which high energy density active materials for negative electrodes of lithium ion batteries. In general, metal alloy/intermetallic compositions can provide the high energy density. These materials can have moderate volume changes upon cycling in a lithium ion battery. The volume changes can be accommodated with less degradation upon cycling through the combination with highly porous electrically conductive materials, such as highly porous carbon and/or foamed current collectors. Whether or not combined with a highly porous electrically conductive material, metal alloy/intermetallic compositions with an average particle size of no more than a micron can be advantageously used in the negative electrodes to improve cycling properties.
    Type: Grant
    Filed: September 12, 2012
    Date of Patent: March 18, 2014
    Assignee: Envia Systems, Inc.
    Inventors: Sujeet Kumar, James P. Buckley
  • Publication number: 20140065485
    Abstract: A complex alloy of at least three phases comprising a composite alloy composed of an Si single phase and an Si—Al-M alloy phase, and an L phase offers a negative electrode material. M is an element selected from transition metals and metals of Groups 4 and 5, and L is In, Sn, Sb, Pb or Mg. The negative electrode material provides a lithium ion battery with a high capacity and long life. The material itself is highly conductive and increases the energy density per volume of a lithium ion battery.
    Type: Application
    Filed: September 5, 2013
    Publication date: March 6, 2014
    Applicant: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Naofumi Shinya, Takehisa Minowa
  • Publication number: 20140038050
    Abstract: The present invention intends to provide silicon-containing particles that, when used as a negative electrode active material for a nonaqueous electrolyte secondary battery, can form a nonaqueous electrolyte secondary battery that is less in volume change during charge/discharge and has high initial efficiency and excellent cycle characteristics. The present invention provides silicon-containing particles that are used as a negative electrode active material for a nonaqueous electrolyte secondary battery and have a diffraction line with a peak at 2?=28.6° in X-ray diffractometry, a negative electrode material for a nonaqueous electrolyte secondary battery therewith, a nonaqueous electrolyte secondary battery, and a method of manufacturing the silicon-containing particles.
    Type: Application
    Filed: June 24, 2013
    Publication date: February 6, 2014
    Applicant: Shin-Etsu Chemical Co., Ltd.
    Inventors: Tetsuo NAKANISHI, Yoshiyasu YAMADA, Kazuyuki TANIGUCHI, Motoyuki YAMADA
  • Publication number: 20130122368
    Abstract: A negative electrode material is provided for lithium ion batteries offering a high capacity and a long cycle life. It is an alloy material consisting essentially of Si, Al, M1, and M2 wherein M1 is a transition metal, and M2 is a metal element of Groups 4 and 5, and having an Si—Al-M1?M2 alloy phase constituting fine crystal grains and an Si phase precipitating along crystal grain boundaries to form a network.
    Type: Application
    Filed: November 13, 2012
    Publication date: May 16, 2013
    Applicant: SHIN-ETSU CHEMICAL CO., LTD.
    Inventor: Shin-Etsu Chemical Co., Ltd.
  • Patent number: 8398768
    Abstract: The invention relates to methods of making articles of semiconducting material on a mold comprising semiconducting material and semiconducting material articles formed thereby, such as articles of semiconducting material that may be useful in making photovoltaic cells.
    Type: Grant
    Filed: May 14, 2009
    Date of Patent: March 19, 2013
    Assignee: Corning Incorporated
    Inventors: Glen Bennett Cook, Christopher Scott Thomas, Natesan Venkataraman
  • Publication number: 20130045281
    Abstract: Disclosed is a process for preparing silver ions (Ag+) comprising treating element metal silver (Ag0) under high temperature and high pressure, and quickly cooling to directly obtain the silver ions (Ag+).
    Type: Application
    Filed: November 6, 2009
    Publication date: February 21, 2013
    Inventor: Raymond CHIN
  • Publication number: 20130011185
    Abstract: A method for joining, assembling, at least two parts made of silicon carbide-based materials by non-reactive brazing is provided. According to the method, the parts are contacted with a non-reactive brazing composition, the assembly formed by the parts and the brazing composition is heated to a brazing temperature sufficient to melt the brazing composition totally or at least partly, and the parts and the brazing composition are cooled so that, after solidification of the brazing composition, a moderately refractory joint is formed; wherein the non-reactive brazing composition is a binary alloy consisting in atomic percentages, of 60% to 66% silicon and 34 to 40% nickel. A brazing composition as defined above is also provided. A paste, suspension of braze alloy comprising a powder of the brazing composition and an organic binder is provided. In addition, a joint and assembly obtained with the foregoing method is provided.
    Type: Application
    Filed: March 11, 2011
    Publication date: January 10, 2013
    Inventors: Valérie Chaumat, Jean-Francois Henne
  • Publication number: 20130004235
    Abstract: A method for joining, assembling, at least two parts made of silicon carbide-based materials by non-reactive brazing is provided. According to the method, the parts are contacted with a non-reactive brazing composition, the assembly formed by the parts and the brazing composition is heated to a brazing temperature sufficient to melt the brazing composition totally or at least partly, and the parts and brazing composition are cooled to that, after solidification of the brazing composition, a moderately refractory joint is formed; wherein the non-reactive brazing composition is an alloy comprising, in atomic percentages, 45% to 65% silicon, 28% to 45% nickel and 5% to 15% aluminium. A brazing composition as defined above is provided. A brazing paste, suspension comprising a powder of said brazing composition and an organic binder as well as a joint and assembly obtained the foregoing method are also provided.
    Type: Application
    Filed: March 11, 2011
    Publication date: January 3, 2013
    Applicant: Commissariat a l'energie atomique et aux energies alternatives
    Inventors: Valérie Chaumat, Jean-Francois Henne, Nadia Miloud-Ali
  • Patent number: 8343514
    Abstract: The invention is related to a sol-gel nanostructured titania reservoir and its synthesis which is biocompatible with brain tissue. The pore size distribution, crystallite size and the extent of the crystalline phase distribution of anatase, brookite and rutile can be fully controlled. This device may be used to contain neurological drugs. It may be inserted directly into brain tissue for the purpose of the controlled time release of drugs over a period of from 6 months to three years.
    Type: Grant
    Filed: June 6, 2006
    Date of Patent: January 1, 2013
    Assignee: Universidad Autonome Metropolitana
    Inventor: Tessy Maria Lopez-Goerne
  • Publication number: 20120308839
    Abstract: A method for assembling at least two parts made of silicon carbide-based materials by non-reactive brazing is disclosed. The two parts are contacted with a non-reactive brazing composition. The assembly formed by the parts and the brazing composition is heated to a sufficient brazing temperature sufficient to melt the brazing composition. The parts and the brazing composition are cooled so that, after solidification of the brazing composition, a moderately refractory joint is formed. The non-reactive brazing composition is a binary alloy composed, in mass percentages, of about 46% to 99% silicon and 54% to 1% neodymium.
    Type: Application
    Filed: September 3, 2010
    Publication date: December 6, 2012
    Inventors: Valérie Chaumat, Jean-François Henne
  • Publication number: 20120282347
    Abstract: Disclosed is a process for preparing silver ions (Ag+) comprising treating element metal silver (Ag0) under high temperature and high pressure, and quickly cooling to directly obtain the silver ions (Ag+).
    Type: Application
    Filed: November 6, 2009
    Publication date: November 8, 2012
    Inventor: Raymond Chin
  • Patent number: 8297340
    Abstract: Process for producing ductile iron by treating liquid iron with an initializer which is a ferrosilicon alloy comprising an effective amount of barium sufficient to inactivate the oxygen activity of the liquid iron. This is followed at a predetermined time thereafter by treating the liquid iron with a magnesium containing nodularizer, followed by treating the liquid iron with a eutectic graphite nucleation-inducing inoculant, and casting the iron.
    Type: Grant
    Filed: June 22, 2007
    Date of Patent: October 30, 2012
    Assignee: Foseco International Limited
    Inventor: Emmanuel Berthelet
  • Patent number: 8273291
    Abstract: A controlled combustion synthesis apparatus comprises an ignition system, a pressure sensor for detecting internal pressure, a nitrogen supply, a gas pressure control valve for feeding nitrogen and exhausting reaction gas, means for detecting the internal temperature of the reaction container, a water cooled jacket, and a cooling plate. A temperature control system controls the temperature of the reaction container by controlling the flow of cooling water supplied to the jacket and the cooling plate in response to the detected temperature. By combustion synthesizing, while controlling the internal pressure and temperature, the apparatus can synthesize a silicon alloy including 30-70 wt. % silicon, 10-45 wt. % nitrogen, 1-40 wt. % aluminum, and 1-40 wt % oxygen.
    Type: Grant
    Filed: March 19, 2009
    Date of Patent: September 25, 2012
    Assignee: Sumikin Bussan Corporation
    Inventors: Toshiyuki Watanabe, Masafumi Matsushita, Toshitaka Sakurai, Kazuya Sato, Yoko Matsushita
  • Publication number: 20120238439
    Abstract: Castable silicon-based compositions have enhanced toughness and related properties compared to silicon. The con-based compositions comprise silicon at a concentration greater than 50% by weight and one or more additional elements in structure comprising a cubic silicon phase and an additional phase which may impart toughness through mechanisms related to plastic flow or crack interaction with interfacial boundaries.
    Type: Application
    Filed: August 19, 2010
    Publication date: September 20, 2012
    Applicant: Massachusetts Institute of Technology
    Inventors: Christopher A. Schuh, David S. Fischer
  • Patent number: 8048236
    Abstract: A Gd5Ge2Si2 refrigerant compound is doped or alloyed with an effective amount of silicide-forming metal element such that the magnetic hysteresis losses in the doped Gd5Ge2Si2 compound are substantially reduced in comparison to the hysteresis losses of the undoped Gd5Ge2Si2 compound. The hysteresis losses can be nearly eliminated by doping the Gd5Ge2Si2 compound with iron, cobalt, manganese, copper, or gallium. The effective refrigeration capacities of the doped Gd5Ge2Si2 compound are significantly higher than for the undoped Gd5Ge2Si2 compound.
    Type: Grant
    Filed: October 26, 2009
    Date of Patent: November 1, 2011
    Assignee: The United States of America as represented by the Secretary of Commerce, the National Institute of Standards and Technology
    Inventors: Robert D. Shull, Alexander J. Shapiro, Virgil Provenzano
  • Patent number: 7972727
    Abstract: An electrode composition for a lithium ion battery that includes an amorphous alloy having the formula SixMyAlz where x, y, and z represent atomic percent values and (a) x+y+z=100, (b) x?55, (c) y<22, (d) z>0, and (e) M is one or more metals selected from the group consisting of manganese, molybdenum, niobium, tungsten, tantalum, iron, copper, titanium, vanadium, chromium, nickel, cobalt, zirconium, yttrium, and combinations thereof.
    Type: Grant
    Filed: March 11, 2010
    Date of Patent: July 5, 2011
    Assignee: 3M Innovative Properties Company
    Inventors: Leif Christensen, Mark N. Obrovac
  • Publication number: 20110044845
    Abstract: The invention relates to ferrous metallurgy, in particular to producing an alloy for reducing, doping and modifying steel. The invention makes it possible to improve the quality of the steel treated with the inventive alloy owing to the deep reduction and modification of non-metallic impurities and the simultaneous microalloying of steel with barium, titanium and vanadium. Barium, titanium and vanadium are added into the inventive alloy, which contains aluminium, silicium, calcium, carbon and iron, with the following component ratio, in mass %: 45.0-63.0 silicium, 10.0-25.0 aluminium, 1.0-10.0 calcium, 1.0-10.0 barium, 0.3-0.5 vanadium, 1.0-10.0 titanium, 0.1-1.0 carbon, the rest being iron.
    Type: Application
    Filed: September 18, 2008
    Publication date: February 24, 2011
    Applicant: Vitatech GmbH
    Inventors: Nursultan Abishevich Nazarbaev, Vladimir Sergeevich Shkolnik, Abdurassul Aldashevich Zharmenov, Manat Zhaksybergenovich Tolymbekov, Sailaubay Omarovich Baisanov
  • Patent number: 7871727
    Abstract: Alloy compositions, lithium ion batteries, and methods of making lithium ion batteries are described. The lithium ion batteries have anodes that contain an alloy composition that includes a) silicon, b) aluminum, c) transition metal, d) tin, e) indium, and f) a sixth element that contains yttrium, a lanthanide element, an actinide element, or a combination thereof. The alloy composition is a mixture of an amorphous phase that includes silicon and a crystalline phase that includes an intermetallic compound of 1) tin, 2) indium, and 3) the sixth element.
    Type: Grant
    Filed: March 23, 2006
    Date of Patent: January 18, 2011
    Assignee: 3M Innovative Properties Company
    Inventors: Mark N. Obrovac, Leif Christensen
  • Patent number: 7851085
    Abstract: Alloy compositions, lithium ion batteries, and methods of making lithium ion batteries are described. The lithium ion batteries have anodes that contain an alloy composition that includes a) silicon, b) aluminum, c) transition metal, d) tin, and e) a fifth element that contains yttrium, a lanthanide element, an actinide element, or a combination thereof. The alloy composition is a mixture of an amorphous phase that includes silicon and a nanocrystalline phase that includes an intermetallic compound of tin and the fifth element.
    Type: Grant
    Filed: March 23, 2006
    Date of Patent: December 14, 2010
    Assignee: 3M Innovative Properties Company
    Inventors: Mark N. Obrovac, Leif Christensen
  • Publication number: 20100290946
    Abstract: The invention relates to methods of making articles of semiconducting material on a mold comprising semiconducting material and semiconducting material articles formed thereby, such as articles of semiconducting material that may be useful in making photovoltaic cells.
    Type: Application
    Filed: May 14, 2009
    Publication date: November 18, 2010
    Inventors: Glen Bennett Cook, Christopher Scott Thomas, Natesan Venkataraman
  • Publication number: 20100178195
    Abstract: A method of solidifying metallic silicon, characterized by monodirectionally solidifying a metallic silicon of 800 ppm or less iron concentration. Any metal impurity components of the metallic silicon can be effectively removed with reduced cost through shortened steps.
    Type: Application
    Filed: June 6, 2008
    Publication date: July 15, 2010
    Inventors: Motoyuki Yamada, Kazuhisa Hatayama
  • Patent number: 7754383
    Abstract: A negative electrode material for a non-aqueous electrolyte secondary battery comprising an alloy including silicon and a transition metal selected from the group consisting of titanium, zirconium, vanadium, molybdenum, tungsten, iron, and nickel; and a silicon oxide film and an oxide film of the transition metal formed on a surface of the alloy wherein the alloy includes an A phase including silicon and a B phase including a crystalline alloy of silicon and the transition metal. The negative electrode material has a silicon oxide film and an oxide film of the transition metal on the surface of the alloy wherein the thickness ratio of the transition metal oxide film to the silicon oxide film is at least 0.44 and smaller than 1.
    Type: Grant
    Filed: December 12, 2006
    Date of Patent: July 13, 2010
    Assignee: Panasonic Corporation
    Inventors: Teruaki Yamamoto, Masaki Hasegawa, Yasuhiko Bito
  • Patent number: 7732095
    Abstract: An electrode composition for a lithium ion battery that includes an amorphous alloy having the formula SixMyAlz where x, y, and z represent atomic percent values and (a) x+y+z=100, (b) x?55, (c) y<22, (d) z>0, and (e) M is one or more metals selected from the group consisting of manganese, molybdenum, niobium, tungsten, tantalum, iron, copper, titanium, vanadium, chromium, nickel, cobalt, zirconium, yttrium, and combinations thereof.
    Type: Grant
    Filed: November 21, 2006
    Date of Patent: June 8, 2010
    Assignee: 3M Innovative Properties Company
    Inventors: Leif Christensen, Mark N. Obrovac
  • Publication number: 20100126587
    Abstract: A reusable transfer substrate member for forming a tiled substrate structure. The member including a transfer substrate, which has a surface region. The surface region comprises a plurality of donor substrate regions. Each of the donor substrate regions is characterized by a donor substrate thickness and a donor substrate surface region. Each of the donor substrate regions is spatially disposed overlying the surface region of the transfer substrate. Each of the donor substrate regions has the donor substrate thickness without a definable cleave region.
    Type: Application
    Filed: January 27, 2010
    Publication date: May 27, 2010
    Applicant: Silicon Genesis Corporation
    Inventor: Francois J. Henley
  • Publication number: 20100028572
    Abstract: A corrosion-resistant member having a high acid resistance, plasma resistance, and hydrophilicity and a process for producing the corrosion-resistant member are provided. The corrosion-resistant member is obtained by surface-treating an untreated member (a ceramic, a metal) to a surface-treatment with a spray of a superheated water vapor having a temperature of 300 to 1000° C. The corrosion-resistant member may be a member contacting with a processing space in a vapor phase surface process apparatus (e.g., a chamber) for the surface process of a substrate by a vapor phase method such as a PVD, a CVD, or a dry etching.
    Type: Application
    Filed: October 2, 2007
    Publication date: February 4, 2010
    Applicant: Asahi Tech Co., Ltd.
    Inventors: Toshio Kobayashi, Yoshimi Morikawa, Koichiro Takayanagi
  • Patent number: 7651574
    Abstract: A Gd5Ge2Si2 refrigerant compound is doped or alloyed with an effective amount of silicide-forming metal element such that the magnetic hysteresis losses in the doped Gd5Ge2Si2 compound are substantially reduced in comparison to the hysteresis losses of the undoped Gd5Ge2Si2 compound. The hysteresis losses can be nearly eliminated by doping the Gd5Ge2Si2 compound with iron, cobalt, manganese, copper, or gallium. The effective refrigeration capacities of the doped Gd5Ge2Si2 compound are significantly higher than for the undoped Gd5Ge2Si2 compound.
    Type: Grant
    Filed: October 27, 2005
    Date of Patent: January 26, 2010
    Assignee: The United States of America as represented by the Secretary of Commerce, the National Institute of Standards and Technology
    Inventors: Robert D. Shull, Alexander J. Shapiro, Virgil Provenzano
  • Publication number: 20090185947
    Abstract: A controlled combustion synthesis apparatus comprises an ignition system, a pressure sensor for detecting internal pressure, a nitrogen supply, a gas pressure control valve for feeding nitrogen and exhausting reaction gas, means for detecting the internal temperature of the reaction container, a water cooled jacket, and a cooling plate. A temperature control system controls the temperature of the reaction container by controlling the flow of cooling water supplied to the jacket and the cooling plate in response to the detected temperature. By combustion synthesizing, while controlling the internal pressure and temperature, the apparatus can synthesize a silicon alloy including 30-70 wt. % silicon, 10-45 wt. % nitrogen, 1-40 wt. % aluminum, and 1-40 wt % oxygen.
    Type: Application
    Filed: March 19, 2009
    Publication date: July 23, 2009
    Applicant: ISMAN J CORPORATION
    Inventors: Toshiyuki Watanabe, Masafumi Matsushita, Toshitaka Sakurai, Kazuya Sato, Yoko Matsushita
  • Publication number: 20080159905
    Abstract: A controlled combustion synthesis apparatus comprises an ignition system, a pressure sensor for detecting internal pressure, a nitrogen supply, a gas pressure control valve for feeding nitrogen and exhausting reaction gas, means for detecting the internal temperature of the reaction container, a water cooled jacket, and a cooling plate. A temperature control system controls the temperature of the reaction container by controlling the flow of cooling water supplied to the jacket and the cooling plate in response to the detected temperature. By combustion synthesizing, while controlling the internal pressure and temperature, the apparatus can synthesize a silicon alloy including 30-70 wt. % silicon, 10-45 wt. % nitrogen, 1-40 wt. % aluminum, and 1-40 wt % oxygen.
    Type: Application
    Filed: April 19, 2007
    Publication date: July 3, 2008
    Applicant: ISMAN J Corporation
    Inventors: Toshiyuki Watanabe, Masafumi Matsushita, Toshitaka Sakurai, Kazuya Sato, Yoko Matsushita
  • Patent number: 7318547
    Abstract: Method for assembling at least two pieces of silicon carbide based materials by non reactive refractory brazing, wherein these pieces are put into contact with a non reactive brazing solder composition and the assembly formed by the pieces and the brazing solder composition is heated to a brazing temperature sufficient to fuse the brazing solder composition in order to form a refractory joint, in which the non reactive brazing solder composition is constituted, in atomic percentages, of from 40 to 97% silicon and of from 60 to 3% of another element chosen in the group consisting of chromium, rhenium, vanadium, ruthenium, iridium, rhodium, palladium, cobalt, platinum, cerium and zirconium and wherein, before brazing, a strengthening agent of SiC and/or C is added. Brazing solder composition, composition for refractory brazing. Refractory joint and assembly obtained by the method.
    Type: Grant
    Filed: March 13, 2001
    Date of Patent: January 15, 2008
    Assignee: Commissariat a l'Energie Atomique
    Inventor: Adrien Gasse
  • Patent number: 7029644
    Abstract: Silicon raw material and gallium dopant are charged and mixed in a crucible. The silicon raw material is heated to a predetermined temperature, and melted under an inactive gas atmosphere. The melted silicon raw material is cooled down to be crystallized to make a polycrystalline silicon incorporating the gallium dopant.
    Type: Grant
    Filed: June 3, 2003
    Date of Patent: April 18, 2006
    Assignees: National University Corporation, Tokyo University of Agriculture and Technology
    Inventor: Tadashi Saito
  • Patent number: 6793781
    Abstract: Silicon-chromium cathode targets having 5 to 80 weight percent chromium are used to sputter absorbing coatings of silicon-chromium-containing material in atmospheres of inert gas such as argon, reactive gases such as nitrogen, oxygen, and mixtures thereof to form metallic films and films of nitrides, oxides, and oxynitrides of metals. Chromium in the cathode target in the range of 5 to 80 weight percent provides target stability and enhanced sputtering rates over targets of silicon alone and are comparable to the target stability and sputtering rates of silicon-nickel targets, Chromium in the target may be replaced in part with nickel, preferably in the range of 5 to 15 weight percent, to produce coatings of silicon-chromium-nickel and the oxides, nitrides and oxynitrides thereof.
    Type: Grant
    Filed: February 15, 2002
    Date of Patent: September 21, 2004
    Assignee: PPG Industries Ohio, Inc.
    Inventor: James J. Finley
  • Patent number: 6723183
    Abstract: The present invention relates to a non-brittle silicide target for forming a gate oxide film made of MSi0.8-1.2 (M: Zr, Hf), and provides a non-brittle silicide target suitable for forming a ZrO2.SiO2 film or HfO2.SiO2 film that can be used as a high dielectric gate insulating film having properties to substitute an SiO2 film.
    Type: Grant
    Filed: December 5, 2001
    Date of Patent: April 20, 2004
    Assignee: Nikko Materials Company, Limited
    Inventors: Kunihiro Oda, Hirohito Miyashita
  • Publication number: 20030220514
    Abstract: A method of preparing a contact mass is provided comprising reacting silicon and a cuprous chloride to form a concentrated, catalytic contact mass. Furthermore, a method for making an alkylhalosilane using the aforementioned contact mass is provided comprising effecting reaction between an alkyl halide and silicon in the presence of said concentrated contact mass to produce alkylhalosilane.
    Type: Application
    Filed: May 20, 2002
    Publication date: November 27, 2003
    Applicant: General Electric Company
    Inventors: Larry Neil Lewis, Paul William Buckley, John Mathew Bablin, Paul Russell Wilson, David John Smith
  • Publication number: 20030171606
    Abstract: The invention concerns a silicon powder for making alkyl- or aryl-halogenosilanes, with particle-size distribution less than 350 &mgr;m, and containing less than 3% and preferably less than 2% of particles having a size less than 5 &mgr;m. Said powder enables to improve efficiency of synthesis reaction.
    Type: Application
    Filed: May 9, 2003
    Publication date: September 11, 2003
    Inventor: Thomas Margaria
  • Publication number: 20030157407
    Abstract: An electrode material for a rechargeable lithium battery, characterized in that said electrode material comprises a fine powder of a silicon-based material whose principal component is silicon element, said fine powder having an average particle size (R) in a range of 0.1 &mgr;m≦R<0.5 &mgr;m. An electrode structural body for a rechargeable lithium battery, having an electrode material layer comprising said silicon-based material fine powder. A rechargeable lithium battery whose anode comprising said electrode structural body.
    Type: Application
    Filed: November 20, 2002
    Publication date: August 21, 2003
    Inventors: Takeshi Kosuzu, Soichiro Kawakami, Masaya Asao, Hidetoshi Tsuzuki, Takao Ogura, Naoya Kobayashi
  • Publication number: 20030103857
    Abstract: A sputter target produced from an alloy powder, the individual particles of which are composed of an Si—Al alloy. It is found that a high degree of homogeneity of the sputter target can be achieved in this way.
    Type: Application
    Filed: August 19, 2002
    Publication date: June 5, 2003
    Applicant: W.C. Heraeus GmbH & Co. KG
    Inventors: Josef Heindel, Christoph Simons, Martin Weigert
  • Patent number: 6521356
    Abstract: An environmentally resistant coating for improving the oxidation resistance of a niobium-based refractory metal intermetallic composite (Nb-based RMIC) at high temperatures, the environmentally resistant coating comprising silicon, titanium, chromium, and niobium. The invention includes a turbine system having turbine components comprising at least one Nb-based RMIC, the environmentally resistant coating disposed on a surface of the Nb-based RMIC, and a thermal barrier coating disposed on an outer surface of the environmentally resistant coating. Methods of making a turbine component having the environmentally resistant coating and coating a Nb-based RMIC substrate with the environmentally resistant coating are also disclosed.
    Type: Grant
    Filed: February 2, 2001
    Date of Patent: February 18, 2003
    Assignee: General Electric Company
    Inventors: Ji-Cheng Zhao, Melvin Robert Jackson, Bernard Patrick Bewlay
  • Patent number: 6497968
    Abstract: An environmentally resistant coating comprising silicon, titanium, chromium, and a balance of niobium and molybdenum for turbine components formed from molybdenum silicide-based composites. The turbine component may further include a thermal barrier coating disposed upon an outer surface of the environmentally resistant coating comprising zirconia, stabilized zirconia, zircon, mullite, and combinations thereof. The molybdenum silicide-based composite turbine component coated with the environmentally resistant coating and thermal barrier coating is resistant to oxidation at temperatures in the range from about 2000° F. to about 2600° F. and to pesting at temperatures in the range from about 1000° F. to about 1800° F.
    Type: Grant
    Filed: February 26, 2001
    Date of Patent: December 24, 2002
    Assignee: General Electric Company
    Inventors: Ji-Cheng Zhao, Bernard Patrick Bewlay, Melvin Robert Jackson