Abstract: A silicon base binary alloy of prealloyed powder having less than 10% aluminum, excluding zero. The alloy may be in the form of gas atomized prealloyed powder, which powder may be consolidated to form an article. Preferably, the article is a sputtering target.

Abstract: A method for making a nickel/silicon sputter target, targets made thereby and sputtering processes using such targets. The method includes the step of blending molten nickel with sufficient molten silicon so that the blend may be cast to form an alloy containing no less than 4.5 wt .% silicon. Preferably, the cast ingot is then shaped by rolling it to form a plate having a desired thickness. Sputter targets so formed are capable of use in a conventional magnetron sputter process; that is, one can be positioned near a cathode in the presence of an electric potential difference and a magnetic field so as to induce sputtering of nickel ion form the sputter target onto the substrate.

Abstract: A metallurgical-grade silicon for use in alkyl or aryl halosilane synthesis, and having a structure consisting of primary silicon crystals and intermetallic compounds, particularly of silicon, aluminum and calcium, wherein at least 90% of the primary silicon crystals have an aluminum content of 50-1000 ppm. This structure substantially enhances the reactivity of the silicon in the synthesis reaction.

Abstract: The technology of altering nuclear, chemical, physical and electrical characteristics of a material by changing isotopic concentrations is not new. It has been used for many years primarily in nuclear reactor fuel enrichments and in production of radioactive isotopes. What is new, with regard to Phoenix 1, is the manipulation of the isotopic concentrations of silicon within certain ranges to obtain a lightweight, high strength material that will withstand temperatures in excess of 1000 degrees C and can be used in structural application. Phoenix-1 is a structural material comprising, % by weight, 20-40% isotope Si-28, 30-50% isotope Si-29, 20-40% isotope Si-30 with trace amounts of gold, silver, nickel, carbon, zinc, germanium and copper to enhance the physical properties in the material.

Abstract: Silicon-chromium cathode targets comprising 5 to 80 weight percent chromium are disclosed for sputtering absorbing coatings of silicon-chromium alloy in atmospheres comprising inert gas, reactive gases such as nitrogen, oxygen, and mixtures thereof which may further comprise inert gas, such as argon, to form nitrides, oxides, and oxynitrides as well as metallic films. The presence of chromium in the cathode target provides target stability and enhanced sputtering rates over targets of silicon alone, comparable to the target stability and sputtering rates of silicon-nickel, for sputtering in oxygen, inert gas, nitrogen or a mixture of nitrogen and oxygen. The chromium in the target may be replaced in part with nickel to produce coatings of silicon-chromium-nickel and the oxides, nitrides and oxynitrides thereof.

Abstract: There are disclosed multi-crystalline silicon which is added with Ga (gallium) as a dopant and a method for producing Ga-doped multi-crystalline silicon, which comprises adding Ga to silicon melt in a crucible, which is melted by heating, and cooling the silicon melt to allow growth of multi-crystalline silicon. According to the present invention, there are provided multi-crystalline silicon and a multi-crystalline silicon wafer for producing solar cells showing stable conversion efficiency for light energy without causing photodegradation as well as methods for producing them.

Abstract: Silicon-chromium cathode targets comprising 5 to 80 weight percent chromium are disclosed for sputtering absorbing coatings of silicon-chromium alloy in atmospheres comprising inert gas, reactive gases such as nitrogen, oxygen, and mixtures thereof which may further comprise inert gas, such as argon, to form nitrides, oxides, and oxynitrides as well as metallic films. The presence of chromium in the cathode target in the range of 5 to 80 weight percent provides target stability and enhanced sputtering rates over targets of silicon alone, comparable to the target stability and sputtering rates of silicon-nickel, not only when sputtering in oxygen to produce an oxide coating, but also when sputtering in inert gas, nitrogen or a mixture of nitrogen and oxygen to produce coatings of silicon-chromium, silicon-chromium nitride or silicon-chromium oxynitride respectively.

Abstract: The present invention relates to a method of joining at least two parts of silicon carbide based material by refractory brazing in which these parts are brought into contact with an intermetallic braze alloy and said parts and braze alloy are heated to a braze temperature equivalent to the melting temperature of the braze alloy in order to form a refractory joint characterized in that the intermetallic braze alloy comprises 1 to 18% by weight of cobalt and from 82 to 99% by weight of silicon, and in that the joint obtained is a thick joint, that is to say with a thickness of generally from 0.1 to 0.5 mm. The invention also relates to a thick, refractory joint obtained by this method. Bonds of silicon carbide parts with thick joints prepared using the method of the invention allow the production with great precision of structures, apparatus and components with complex shapes having high temperatures of use reaching as high as 1000° C. and even higher.

Abstract: A method of producing a silicon aluminum sputtering target is provided. The target is formed from a powder base of between about 80% to about 95% by weight silicon and about 5% to about 20% by weight aluminum which is placed in a containment unit, heated under vacuum and then sealed. The base is then subjected to a pressure greater than about 3000 psi and heated to a temperature between about 1076° F. and about 1652° F. such that some, but not more than 30%, of the resulting target is formed from liquid phase silicon-aluminum.

Abstract: A composition for inoculating grey iron, particularly low sulphur grey iron, comprises by weight: rare earth 1.0-4.0%, preferably 1.5-2.5%; strontium 0.5-1.5%, preferably 0.7-1.0%; calcium 1.5% maximum, preferably 0.5% maximum; aluminum 2.0% maximum, preferably 0.5% maximum; silicon 40.0-80.0%, preferably 70.0-75.0%; iron balance. The composition is most preferably free of calcium and aluminum. The rare earth may be cerium, mischmetall or a mixture of cerium and other rare earths. The composition may be a mixture of ferrosilicon and the other constituents, a ferrosilicon alloy containing the other constituents or a rare earth and a silicon-bearing inoculant containing strontium.

Abstract: High temperature alloys resistant to degradation and oxidation are provided. In accordance with preferred embodiments, alloys comprising from about 0.1 to about 50 atomic percent silicon, from about 10 to about 80 atomic percent aluminum, and at least one metal selected from the group consisting of chromium, iridium, rhenium, palladium, platinum, rhodium, ruthenium, osmium, molybdenum, tungsten, niobium and tantalum are formed. Shaped bodies and structural members comprising such alloys are also described as are methods for their fabrication.

Abstract: A brazing powder comprises a single powder or mixture powder that is composed of one or more type of elements consisting of Al, Si and Zn, having the composition of Al--Si--Zn hypereutectic alloy in terms of the total amount. The brazing powder comprises above 15% but up to 60% by weight of Si and 5% to 30% by weight of Zn.

Abstract: The invention relates to an inoculant for the manufacture of cast iron with lamellar, compacted or spheroidal graphite. The inoculant comprises between 40 and 80% by weight of silicon, between 0.5 and 10% by weight of calcium and/or strontium and/or barium, between 0 and 10% by weight of cerium and/or lanthanum, between 0 and 5% by weight of magnesium, less than 5% by weight of aluminium, between 0 and 10% by weight of manganese and/or titanium and/or zirconium, between 0.5 and 10% by weight of oxygen in the form of one or more metal oxides, the balance being iron, said inoculant further comprising between 0,1 and 10% by weight of sulphur in the form of one or more metal sulphides. The invention further relates to a method for the production of the inoculant.

Abstract: A method of joining at least two parts in silicon carbide based material by refractory brazing in which these parts are brought into contact with an intermetallic braze alloy and said parts and braze alloy are heated to a braze temperature equivalent to the melting temperature of the braze alloy in order to form a refractory joint characterized in that the intermetallic braze alloy comprises 1 to 18% by weight of cobalt and from 82 to 99% by weight of silicon, and in that the joint obtained is a thick joint, that is to say with a thickness of generally from 0.1 to 0.5 mm, and a thick refractory joint obtained by this method, wherein bonds of silicon carbide parts with thick joints prepared using the method of the invention allow the production with great precision of structures, apparatus and components with complex shapes having high temperatures of use reaching as high as 1000.degree. C. and even higher.

Abstract: Novel hydrogenated amorphous silicon alloys are disclosed. Hydrogenated amorphous silicon alloys produced by PECVD are disclosed. A method is also disclosed for the preparation of novel hydrogenated amorphous silicon alloys for use as thin films. The method comprises subjecting a mixed gas of gas-phase silicon compounds and other gas-phase alloy element compounds to plasma enhanced chemical vapor deposition in a reaction zone such that the alloy formed is deposited on a substrate.

Abstract: The present invention relates to joining by brazing ceramic elements comprising SiC. The purpose of the invention is to provide a braze alloy which gives a brazed joint resistant to fluorine effluents and having controlled reactivity with SiC. This purpose is achieved using a braze alloy comprising Si and rhodium.

Abstract: A metallurgical silicon or ferrosilicon in the form of granulates having an average size of less than 10 mm and in which the total oxygen concentration is less than 0.05% by weight, and a process for manufacture of this silicon or ferrosilicon consisting of a carbothermal reduction of silica in an electric oven, chlorine-based refining of the liquid metal, and granulation of the refined liquid metal in water under an inert atmosphere. The silicon may be used for silicone manufacture or as a constituent of an aluminum alloy, and the ferrosilicon, as a steel additive used to obtain magnetic sheet metals for electrical construction.

Abstract: The present invention relates to a method for upgrading silicon-containing solid residues obtained after leaching of copper from copper-containing residues from direct synthesis of organochlorosilanes. Solid residue, optionally together with an oxidation agent, is supplied to a smelting furnace where the residues are melted and form a molten metallic phase substantially containing silicon and a calcium silicate slag and tapping of the molten metallic phase and an inert slag from the smelting furnace.

Abstract: A ferrosilicon-based ferroalloy for inoculation of spherulitic graphite irons containing (by weight) from 0.005% to 3% rare earths, 0.005% to 3% bismuth, lead and/or antimony, and 0.3% to 3% calcium, and is characterized by the fact that Si/Fe>2 and contains from 0.3 to 3% magnesium. The ferroalloy exhibits improved granulometric stability during storage.

Abstract: Si-Fe-Cr base coating alloys that significantly promote the oxidation resistance of niobium-base alloys and intermetallic materials when deposited and reaction bonded to the niobium-base material. The coating alloys are deposited and then reaction bonded to a niobium-base material to yield an oxidation-resistant coating comprising an interaction layer containing at least one oxidation-resistant Si-Fe-Nb-Cr intermetallic phase.

Abstract: A metallurgical silicon with controlled microstructure for the preparation of halogenosilanes, characterized by an image of the microstructure obtained with the scanning electron microscope which is processed by binarization between an intermetallic phase and a silicon matrix, with expansion in zones corresponding to the intermetallic phase with an extension of about 10 .mu.m around these zones. The ratio of the surface fraction of the intermetallic phase after expansion to the intermetallic phase before expansion, S/S.sub.0, is between 20 and 40. The silicon according to the invention assures an elevated reactivity in the Rochow reaction for the production of halogenosilanes intended for the preparation of silicones.

Abstract: The present invention relates to a method for grain refining of aluminium and aluminium alloys wherein a siliconboron alloy containing between 0.01 to 4.0 % by weight of boron is added to molten aluminium or aluminium alloy in such an amount that the resulting melt of aluminium or aluminium alloy contains at least 50 ppm boron. The invention further relates to a grain refining alloy for aluminium and aluminium alloys which grain refining alloy is a siliconboron alloy containing between 0.01 and 4.0 % by weight of boron.

Abstract: A lanthanoid silicide-coated silicon carbide material whereof the surface is coated with a silicide, this silicide being a reaction product of an oxide of a lanthanoid rare earth element or yttrium with silicon carbide, or a reaction product of a compound oxide of a lanthanoid rare earth element or yttrium and silicon with silicon carbide; and a lanthanoid silicide-coated silicon carbide as above whereof the surface is further coated with an oxide of a lanthanoid rare earth element or yttrium, or with a compound oxide of a lanthanoid rare earth element or yttrium and silicon.

Abstract: Dense monolithic SiC or SiC ceramic composites are strongly bonded using brazing compositions which, in their preferred composition, include a braze alloy consisting essentially of less than 50 weight percent silicon and at least two metals from the group of Fe, Cr, Co and V and produce a joint suitable for use in a high neutron flux environment. Brazing is carried out at a temperature of about 1200.degree. to 1500.degree. C. in an inert atmosphere and is complete in about 15 minutes. Broadly, a genus of brazing compounds are disclosed which include between about 10 and about 45 weight percent silicon and at least two elements selected from the following group: Li, Be, B, Na, Mg, P, Sc, Ti, V, Cr, Mn, Fe, Co, Zn, Ga, Ge, As, Rb, Y, Sb, Te, Cs, Pr, Nd, Ta, W and Tl.

Abstract: The present invention is a method for analyzing silicon for nonmetallic contaminants. The method comprises: (A) forming an alloy comprising silicon and a metal which promotes separation of nonmetallic contaminants present in the alloy, (B) separating the nonmetallic contaminants from the alloy, and (C) analyzing the separated nonmetallic contaminants for chemical content. The present invention is particularly useful for analyzing metallurgical grade silicon intended for use in the direct process for the production of organohalosilanes for the presence of oxides and carbides of calcium, aluminum, and silicon.

Abstract: The present invention relates to a method for grain refining of aluminium and aluminium alloys wherein a siliconboron alloy containing between 0.01 to 4.0% by weight of boron is added to molten aluminium or aluminium alloy in such an amount that the resulting melt of aluminium or aluminium alloy contains at least 50 ppm boron. The invention further relates to a grain refining alloy for aluminium and aluminium alloys which grain refining alloy is a siliconboron alloy containing between 0.01 and 4.0% by weight of boron.

Abstract: Cr.sub.3 Si is alloyed with molybdenum which produces a two-phase microstructure of (Cr,Mo).sub.3 Si and (Cr,Mo).sub.5 Si.sub.3. About 50 weight percent of molybdenum is present in the alloy. The alloy forms two protective oxides over a wide range of temperatures. Chromium and molybdenum oxide volatize under flowing air at high temperatures above 1200.degree. C. which facilitates the formation of SiO.sub.2 on the surface. Below 1200.degree. C. Cr.sub.2 O.sub.3 is formed. The new alloy has excellent high temperature strength and creep properties.

Abstract: Alloys of hydrogenated amorphous silicon and germanium are disclosed that exhibit unexpectedly low saturated defect densities, particularly relative to the initial defect densities of the alloys, so as to render them substantially resistant to Staebler-Wronski degradation. The alloys are producible using conventional equipment, but glow-discharge methods are preferred. The preferred amount of germanium in the alloy is about 15 at. % to about 50 at. %. The alloys are particularly useful for making photovoltaic cells. The alloys can be used as intrinsic semiconductors and doped for use as "n" or "p" materials. Methods for making the alloys are also disclosed.

Abstract: Disclosed is an agent based on ferrosilicon for the treatment of cast iron melts before treatment with spheroidal graphite-inducing elements, especially magnesium, wherein, as additive elements, the agent additionally contains calcium, aluminum, manganese, zirconium, cerium and lanthanum. The content of iron plus silicon is at least 75% by weight with reference to the weight of all components and the elements zirconium, cerium and manganese additively are at least 5% by weight of the agent. The present invention also provides a process for the production of this agent, as well as a process for treating cast iron melts therewith.

Abstract: An alloy having a very high resistance to oxidation is taught. The alloy contains between 30 and 75 atom percent of silicon in an iridium base. The alloy may be used in the form of a surface coating to protect structural elements of other materials from oxidation. The alloy may also be used as an ingredient of a composite.

Abstract: There are disclosed pharmaceutical compositions containing polyoxoanions, methods of using them alone or in combination with other compounds, such as AZT and Poly-I:C for the treatment of retroviruses. Also disclosed are novel polyoxoanions.

Abstract: The claimed material for refining steel of multi-purpose application contains the following components in the following proportion, % by mass:______________________________________ aluminium 30-40 silicon 35-25 calcium 5-15 magnesium 7-5 carbon 20-10 iron the balance.

Abstract: An inoculating alloy for gray iron, said alloy consisting essentially of 65.0-70.0% silicon, 8.0-10% titanium, 5% max manganese, 2.0-2.5% barium, 1.0-1.5% calcium, 1.5% max aluminum, the balance being iron and incidental impurities.

Abstract: A method of making a silicon alloy, and preferably a ferrosilicon alloy, having a controlled calcium content and optionally rare earth constituents wherein the calcium and rare earth constituents are separately introduced into the ferrosilicon smelting furnace in briquette form. The calcium briquettes comprise a compressed and cured mixture of calcium carbonate, preferably in the form of pulverized limestone, a carbon source, such as carbon black, and a binder. The briquetted calcium carbonate dissociates as it is heated during its descent in the smelting furnace and transforms to calcium oxide. The resultant calcium oxide reacts with the carbon in the briquette in the high temperature smelting zone to yield calcium carbide which then reacts with silica to form calcium silicide which then enters into solution with the molten ferrosilicon alloy.

Abstract: The present invention relates to a process for the production of ferrosilicon in a closed two-stage reduction furnace. In the present invention, carbon monoxide released as a result of the smelting process, in the first stage of the furnace, is used to prereduce higher oxides of iron, for example Fe.sub.2 O.sub.3 and Fe.sub.3 O.sub.4, contained in a second stage of a furnace, to iron monoxide (FeO). The iron monoxide is then used as a feed material to the first stage of the furnace. The use of a closed furnace and a pre-reduction process results in substantial energy savings in the production of ferrosilicon alloy.

Abstract: A process for manufacturing a silicon-germanium alloy comprising introducing SiH.sub.4 gas, GeCl.sub.4 gas and P-type or N-type doping gas into a reaction vessel, heating a substrate up to a temperature not lower than 750.degree. C., and depositing a thickly-grown, bulky silicon-germanium alloy upon the substrate within the reaction vessel.

Abstract: A new material for use in the manufacture of semiconductor devices, a method of manufacturing the new material, and a heat radiator structure for a semiconductor device. The material is an aluminum alloy containing 30-60% by weight of Si and the remaining weight % is Al. The method of manufacture includes solidifying molten material into a powder and forming the powder by hot plastic working. The heat radiator structure includes a substrate of envelope material and an Al-Si alloy layer glued to the substrate through a function layer.

Abstract: A process for the production of silicon in a low-shaft electric furnace, in which raw-material blanks are first formed which contain fine-grain silicon dioxide, e.g. in the form of sand, and carbon in excess in respect of the reduction to silicon carbide and the raw-material blanks are introduced into the low-shaft furnance as a charge in mixture with silicon dioxide in lump form. The silicon dioxide in the raw-material moldings is reduced to silicon carbide in an upper part of the low-shaft electric furnace at a temperature of below 1600.degree. C. and coke structure agglomerates are formed from the excess carbon of the raw-material moldings. In a lower part of the low-shaft electric furnace, the silicon dioxide in lump form, is reduced to silicon with silicon carbide and carbon from the coke structure agglomerates at a temperature of above 1600.degree. C., preferably from 1800.degree. to 200.degree. C. The raw-material moldings are formed with bituminous binder containing a fine-particle silica powder.

Abstract: An n-type microcrystalline semiconductor alloy material including a band gap widening element; a method of fabricating p-type microcrystalline semiconductor alloy material including a band gap widening element; and electronic and photovoltaic devices incorporating said n-type and p-type materials.

Abstract: A ferrosilicon inoculant for gray cast iron containing between 0.1 to 10% strontium, less than 0.35% calcium and either 0.1 to 15% zirconium, 0.1 to 20% titanium or a mixture of both zirconium and titanium with the strontium. The inoculant, method for producing the inoculant, method for inoculating the melt and a gray cast iron inoculated with the inoculant are covered.

Abstract: A semiconductor device having an electroconductive portion made of a multi-component alloy which may be represented by a formula:M.Fe.sub.x.Si.sub.ywherein 0<x<0.17, 2.ltoreq.y.ltoreq.3 and M is a metal or metals selected from Groups IV, V and VI elements in the Periodic Table.

Abstract: A thermoelectric alloy composition is described comprising from 5% to 95% silicon, from 95% to 5% Germanium, from 0.01% to 0.2% lead and from 0% to 0.2% tin, all percentages being atomic percentages. In a preferred composition at least 50% silicon and 50% Germanium is present with 0.03% to 0.1% lead and from 0 to 0.05% tin. Tin and lead in combination provide lower thermal conductivity and a greater figure of merit than with lead or tin alone. Other preferred compositions are provided and a thermoelectric material and a p-n coupling thermoelectric generator (10) incorporating the alloy is disclosed. The alloy composition provides high efficiency of power to heat loss and minimizes running costs.

Abstract: A method of making a metalloid precursor powder is disclosed, which powder avoids impurity localization and is effective to produce an improved fine grained ceramic body. A metalloid melt is formed and rapidly solidified into particles having a particle size distribution of 2-50 microns; the particles are cooled at a rate to distribute impurities or additive metal ingredients substantially uniformly throughout the solidifed particles with spacing between localizations being substantially in the range of 1-25 microns and the size of each localization being one micron or less. The cooling rate is preferably equal to or greater than 10.sup.5 .degree. C./second.

Abstract: A ferrosilicon inoculant for gray cast iron containing between 0.1 to 10% strontium, less than 0.35% calcium and either 0.1 to 15% zirconium, 0.1 to 20% titanium or a mixture of both zirconium and titanium with the strontium. The inoculant, method for producing the inoculant, method for inoculating the melt and a gray cast iron inoculated with the inoculant are covered.

Abstract: An article is disclosed comprising particles of a silicon nitride based material and a lubricating material, the lubricating material occupying interconnected spaces within the article, the spaces being at least about 3% by volume of the article.

Abstract: An inoculant alloy based on ferrosilicon or silicon for the manufacture of cast iron with lamellar, compact or spheroidal graphite is described, this alloy comprising(a) between 0.1 and 10% of barium and/or zirconium,(b) less than 2% of aluminum and(c) 0.3% of calcium.This inoculant alloy is distinguished by particularly good suppression of the precipitation of carbide and by its preparation process which is industrially simple and thus has favorable costs.

Abstract: A fluorinated, p-doped microcrystalline semiconductor alloy material; electronic devices incorporating said p-doped material; and the method for fabricating said p-doped material.

Abstract: A process is described for the manufacture of ferrosilicon or silicon alloys containing strontium and having a low aluminum and calcium content, in which a strontium compound is introduced together with an alkaline earth metal, an alkaline earth metal-containing alloy or calcium carbide as reducing agent into the molten ferrosilicon or silicon. The process is distinguished by low industrial expense and good strontium yields.

Abstract: The present invention provides a high resistance film with a low temperature coefficient of resistance. Such films can be used as resistors in integrated and hybrid circuits, as well as resistive layers in passivating circuits for high-voltage devices. In the latter circuits, the passivating layers shield the device from the detrimental influence of external or internal electric fields. The ability to obtain a low temperature coefficient of resistance enables obtaining a high sheet resistance without being influenced by changing temperatures.

Abstract: Compacted graphite (CG) cast iron is obtained in the inmold casting process employing as an additive an alloy comprising 1.5-3 percent magnesium, 10-20 percent titanium, 40-80 percent silicon, 0-2 percent rare earth, 0-0.5 percent calcium, 0-2 percent aluminum and balance iron.