Abstract: An amorphous film formed of a transition element-silicon compound which has excellent electric and optical characteristics is disclosed. The compound is amorphous and has a Si content of 60-85 at. %.

Abstract: The production of improved photoresponsive amorphous alloys and devices, such as photovoltaic, photoreceptive devices and the like; having improved wavelength threshold characteristics is made possible by adding one or more band gap adjusting elements to the alloys and devices. The adjusting element or elements are added at least to the active photoresponsive regions of amorphous devices containing silicone and fluorine, and preferably hydrogen. One adjusting element is germanium which narrows the band gap from that of the materials without the adjusting element incorporated therein. Other adjusting elements can be used such as tin. The silicon and adjusting elements are concurrently combined and deposited as amorphous alloys by vapor deposition, sputtering or glow discharge decomposition. The addition of fluorine bonding and electronegativity to the alloy acts as a compensating or altering element to reduce the density of states in the energy gap thereof.

Abstract: A high-temperature reaction solder, for silicon carbide materials, containing 20-45% cobalt and 80-55% silicon by weight, and a process for brazing are disclosed.

Abstract: An amorphous silicon semiconductor of the general formula: a-Si.sub.(1-x-y) C.sub.x N.sub.y containing hydrogen and/or fluorine, which provides an amorphous silicon PIN junction photovoltaic device having an improved conversion efficiency when it is used as a P-type or N-type layer on the light impinging side of the PIN junction photovoltaic device. Also, the conversion efficiency of an amorphous silicon PIN junction photovoltaic device is improved by using a two-layer film structure of ITO and SnO.sub.2 as a transparent electrode for the photovoltaic device, with the SnO.sub.2 layer contacting the P or N layer. The improvement is particularly marked in the case of heterojunction photovoltaic devices.

Abstract: The production of improved photoresponsive amorphous alloys and devices, such as photovoltaic, photoreceptive devices and the like. The alloys and devices have improved wavelength threshold characteristics made possible by introducing one or more band gap adjusting elements and dopants into the alloys and devices in layers and/or clusters. The dopants and adjusting element or elements are added to the amorphous devices containing silicon and at least one reducing element, such as hydrogen. One adjusting element is germanium which narrows the band gap from that of the materials without the adjusting element incorporated therein. Other adjusting elements can be used such as tin or nitrogen along with conventional dopants. The silicon and adjusting elements are concurrently combined and deposited as amorphous alloys by vapor deposition, sputtering or glow discharge decomposition.

Abstract: An interconnect structure for use in integrated circuits comprises a germanium-silicon binary alloy. Such an alloy is deposited on the semiconductor wafer from the co-deposition of germanium and silicon using chemical vapor deposition techniques of a type commonly used in the semiconductor industry. The resulting alloy can be oxidized, selectively removed and doped with selected impurities to provide a conductive lead pattern of a desired shape on the surface of a wafer.

Abstract: A boron alloying additive for continuous casting of boron steel having the desired hardenability without tundish nozzle blockage. The additive comprises 0.25-3.0% boron, 2.5-40% rare earth metals (RE), 6-60% titanium, and the balance iron. The additive may also contain silicon, calcium, manganese, and zirconium. In the additive the weight ratios of Ti to B and (Ti+RE) to B are 20:1-60:1 and 30:1-90:1, respectively.

Abstract: A process for the production of silicon or ferrosilicon by reduction of silicon oxide, optionally in the presence of iron or iron oxide, using a carbonaceous reducing agent, in a reduction furnace.

Abstract: This invention relates to the use of lanthanum in the production of iron-based alloys. Accordingly, is provided a method comprising adding at least 0.0001 to about 0.5 to 2 weight percent of lanthanum to said iron-based alloy during its production. Thus the solidification curve is modified, as shown in FIG. 2, thereby reducing or preventing certain defects of said alloys, such as pinholes and cavities in spheroidal graphite cast-irons, carbides in flaky graphite grey-iron; the castability, rollability and anisotropy of steels are improved.

Abstract: The present invention is directed to a process for preparing a body of polycrystalline silicon doped with aluminum comprising melting a mixture of silicon powder and aluminum powder, rapidly quenching the melt, grinding the solidified silicon-aluminum alloy and hot pressing to form a compact.

Abstract: A magnesium ferrosilicon alloy for in-mold nodulization of ductile iron consisting of 5-15%, by weight of magnesium, 60-80% silicon, 0.1-1.5% calcium, 0.1-3.0% aluminum, 0-2.5% rare earth, and balance iron.

Abstract: An inoculating alloy for addition to molten cast iron is disclosed. The composition is a silicon ferro alloy containing five to eight percent calcium as its active ingredient.