Abstract: Disclosed is a process for producing spheroidized boron nitride which enable the further improvement in the heat conductivity of a heat dissipative member. Specifically disclosed is a process for producing spheroidized boron nitride, which is characterized by using spheroidized graphite as a raw material and reacting the spheroidized graphite with a boron oxide and nitrogen at a high temperature ranging from 1600 to 2100° C. to produce the spheroidized boron nitride. The boron oxide to be used in the reaction is preferably boron oxide (B2O3), boric acid (H3BO3), or a substance capable of generating a boron oxide at a higher temperature. A gas to be used in the reaction is preferably nitrogen or ammonia.

Abstract: Hardmask films having high hardness and low stress are provided. In some embodiments a film has a stress of between about ?600 MPa and 600 MPa and hardness of at least about 12 GPa. In some embodiments, a hardmask film is prepared by depositing multiple sub-layers of doped or undoped silicon carbide using multiple densifying plasma post-treatments in a PECVD process chamber. In some embodiments, a hardmask film includes a high-hardness boron-containing film selected from the group consisting of SixByCz, SixByNz, SixByCzNw, BxCy, and BxNy. In some embodiments, a hardmask film includes a germanium-rich GeNx material comprising at least about 60 atomic % of germanium. These hardmasks can be used in a number of back-end and front-end processing schemes in integrated circuit fabrication.

Abstract: Provided is a method of manufacturing a hexagonal boron nitride nanosheet to mass-produce a high-quality hexagonal boron nitride nanosheet at a low temperature in a safe process. The method of manufacturing a hexagonal boron nitride nanosheet includes (a) obtaining an alkali metal ion or alkali earth metal ion from a salt mixture including at least two kinds of alkali metal salt or alkali earth metal salt, (b) preparing a hexagonal boron nitride interlayer compound by inserting the alkali metal ion or alkali earth metal ion into layers of hexagonal boron nitride, and (c) obtaining a hexagonal boron nitride nanosheet by removing the alkali metal ion or alkali earth metal ion from the hexagonal boron nitride interlayer compound.

Abstract: Boron-containing compounds, gasses and fluids are used during ammonothermal growth of group-Ill nitride crystals. Boron-containing compounds are used as impurity getters during the ammonothermal growth of group-Ill nitride crystals. In addition, a boron-containing gas and/or supercritical fluid is used for enhanced solubility of group-Ill nitride into said fluid.

Abstract: Disclosed herein are substrates which have been dry coated with a layered material. Generally, a layered material precursor composition is mixed with a milling medium so that the milling medium is coated with the layered material. The substrate is then contacted with the coated milling medium. The layered material on the milling medium transfers to the substrate to form a coating on the substrate. In particular, conductive films can be formed on a substrate without the need for additives such as a surfactant or a polymeric binder.

Abstract: A group 13 nitride crystal has a hexagonal crystal structure containing a nitrogen atom and at least one type of metal atom selected from the group consisting of B, Al, Ga, In, and Tl. The group 13 nitride crystal has a basal plane dislocation in a plurality of directions. Dislocation density of the basal plane dislocation is higher than dislocation density of a threading dislocation of a c-plane.

Abstract: A hexagonal boron nitride sheet having: a two-dimensional planar structure with a sp2 B—N covalent bond, a Van der Waals bond between boron-nitrogen layers, a root mean square surface roughness of about 2 nanometers or less, and a length of about 1 millimeter or greater.

Abstract: A method for manufacturing a nanoscale cage of a material suitable for forming a molecular layer, including a step of shaping and packaging an object in the general shape of a revolving cylinder, the shaping and packaging step being adapted according to the position of the value of the diameter of the revolving cylinder relative to a threshold below which a folding of the ends of the cylinder is promoted.

Abstract: A method of forming boron nitride nanoparticles. A plurality of precursor molecules comprising boron, nitrogen and hydrogen may be decomposed in a first heating zone to form a plurality of gaseous molecules that contain bonded boron and nitrogen, followed by heating to a second, higher temperature thereby causing the gaseous molecules to react and nucleate to form a plurality of boron nitride nanoparticles. Depending on processing temperatures, the boron nitride nanoparticles may include amorphous forms, crystalline forms, or combinations thereof. Precursor molecules may include ammonia borane, borazine, cycloborazanes, polyaminoborane, polyiminoborane, and mixtures thereof. The boron nitride nanoparticles may be incorporated into a variety of dispersions, composites, and coatings; and in one embodiment, may be a component of a propellant, wherein the boron nitride nanoparticles may confer a range of advantages to gun barrels in which such propellants may be fired.

Abstract: Spherical boron nitride nanoparticles having an average particle diameter of less than 50 nm is obtained by a method of synthesizing spherical boron nitride nanoparticles including the following steps; heating a mixture of boric acid ester and nitrogen gas in ammonia gas and argon gas to form reaction product; crystallizing reaction product to form precursor of spherical boron nitride nanoparticles; and, heating the precursor in inert gas.

Abstract: A group 13 nitride crystal having a hexagonal crystal structure and containing at least a nitrogen atom and at least a metal atom selected from a group consisting of B, Al, Ga, In, and Tl. The group 13 nitride crystal includes a first region disposed on an inner side in a cross section intersecting c-axis, a third region disposed on an outermost side in the cross section and having a crystal property different from that of the first region, and a second region disposed at least partially between the first region and the third region in the cross section, the second region being a transition region of a crystal growth and having a crystal property different from that of the first region and that of the third region.

Abstract: Methods and apparatus for producing chemical nanostructures having multiple elements, such as boron and nitride, e.g. boron nitride nanotubes, are disclosed. The method comprises creating a plasma jet, or plume, such as by an arc discharge. The plasma plume is elongated and has a temperature gradient along its length. It extends along its length into a port connector area having ports for introduction of feed materials. The feed materials include the multiple elements, which are introduced separately as fluids or powders at multiple ports along the length of the plasma plume, said ports entering the plasma plume at different temperatures. The method further comprises modifying a temperature at a distal portion of or immediately downstream of said plasma plume; and collecting said chemical nanostructures after said modifying.

Abstract: A method of activating boron nitride comprises exposing the boron nitride to a fluid enabling —OH hydroxyl radicals and/or H3O+ to be delivered and creating B—OH bonds and/or NH2 bonds in the boron nitride, and eliminating the fluid and recovering the activated boron nitride.

Abstract: A process for producing boron nitride nanotubes and nanotube films, which process comprises heating a liquid composition comprising boron particles and a metal compound, wherein heating takes place at a temperature of from 800-1300° C. in a gaseous atmosphere containing nitrogen that causes boron nitride nanotubes to grow, and wherein the boron particles have an Caverage particle size of less than 100 nm, and wherein the metal compound is selected such that it promotes the growth of boron nitride nanotubes during heating.

Abstract: This invention is directed to a process for the preparation of boron nitride powder, particularly a fine powder with a low degree of contamination, which demonstrates good caking, heat conductivity and dielectric properties. Specifically, a process for the preparation of amorphous boron nitride (a-BN) is provided wherein the process comprises: mixing powders of boric acid and a carbamide at a temperature in the range of about 250-300° C., thereby forming: ammonium polyborates; boron imide or a mixture thereof and ammonia; and heating of the materials formed in step (a) to a temperature in the range of about 500-600° C., thereby forming a powder of a-BN.

Abstract: The present invention provides a method for synthesis of crystalline polymeric boron-nitrogen compounds comprising a step of dehydrogenation of a boron-nitrogen-hydrogen compound on catalyst, wherein the boron-nitrogen-hydrogen compound is selected from the group consisting of ammonia borane, metal amidoboranes, amine boranes or mixtures thereof, and the catalyst is selected from the group consisting of transition metals, transition metal salts or alloys.

Abstract: A method for producing a pyrolytic boron nitride (PBN) article comprises introducing a nitrogen containing gas and a boron containing gas into a heated reactor furnace under temperature and pressure conditions sufficient to form a PBN deposit and pulsing the flow of the reactant gases between an on and an off state. The method provides a multi-layered PBN article that exhibits a relatively weak bonding interface between adjacent PBN layers to allow for the layers to be peeled away from one another in a controlled manner.

Abstract: A new method is disclosed for the exfoliation of hexagonal boron nitride into mono- and few-layered nanosheets (or nanoplatelets, nanomesh, nanoribbons). The method does not necessarily require high temperature or vacuum, but uses commercially available h-BN powders (or those derived from these materials, bulk crystals) and only requires wet chemical processing. The method is facile, cost efficient, and scalable. The resultant exfoliated h-BN is dispersible in an organic solvent or water thus amenable for solution processing for unique microelectronic or composite applications.

Abstract: Provided is a composite comprising a polymer and a plurality of surface-modified hexagonal boron nitride particles dispersed therewithin. Suitable polymers include polyimide and epoxy. A process is also provided. The surface modified hexagonal boron nitride particles comprise surface-bonded substituted phenyl radicals.

Abstract: A hexagonal boron nitride (h-BN) powder is disclosed in which primary particles of the powder exhibit a ratio (D/d) of long diameter (D) to thickness (d) in a range of 5 to 10. Agglomerated particle bodies made of the primary particles have an average particle diameter (D50) in a range of 2 ?m to 200 ?m, inclusive, and the powder has a bulk density in a range of 0.5 g/cm3 to 1.0 g/cm3. In an exemplary method for producing the h-BN, boron carbide is nitridizated in a nitrogen partial pressure of at least 5 kPa at 1800° C. to 2200° C., inclusive. B2O3 (or precursor thereof) is added to the nitridization product to produce a mixture. The mixture is decarbonized in a non-oxidizing atmosphere at a 1500° C. to 2200° C., inclusive. The decarbonization product is pulverized and subject to particle-size classification, yielding H-BN powder. The method includes a depressurizing step, performed at 100 kPa or less either during nitridization or after decarbonization.

Abstract: An ammonothermal growth of group-III nitride crystals on starting seed crystals with at least two surfaces making an acute, right or obtuse angle, i.e., greater than 0 degrees and less than 180 degrees, with respect to each other, such that the exposed surfaces together form a concave surface.

Abstract: Boron nitride nanotubes are prepared by a process which includes: (a) creating a source of boron vapor; (b) mixing the boron vapor with nitrogen gas so that a mixture of boron vapor and nitrogen gas is present at a nucleation site, which is a surface, the nitrogen gas being provided at a pressure elevated above atmospheric, e.g., from greater than about 2 atmospheres up to about 250 atmospheres; and (c) harvesting boron nitride nanotubes, which are formed at the nucleation site.

Abstract: The present invention relates to a method for applying hexagonal boron nitride to a rough surface, wherein it is intended for the boron nitride to be provided as a temperature-resistant lubricant of the surface. According to the invention, a pin composed of hexagonal boron nitride is rubbed with pressure over the rough surface, such that abraded boron nitride adheres to the surface.

Abstract: Disclosed is a process for producing spheroidized boron nitride which enable the further improvement in the heat conductivity of a heat dissipative member. Specifically disclosed is a process for producing spheroidized boron nitride, which is characterized by using spheroidized graphite as a raw material and reacting the spheroidized graphite with a boron oxide and nitrogen at a high temperature ranging from 1600 to 2100° C. to produce the spheroidized boron nitride. The boron oxide to be used in the reaction is preferably boron oxide (B2O3), boric acid (H3BO3), or a substance capable of generating a boron oxide at a higher temperature. A gas to be used in the reaction is preferably nitrogen or ammonia.

Abstract: Proppants which can be used to prop open subterranean formation fractions are described. Proppant formulations which use one or more proppants of the present invention are described, as well as methods to prop open subterranean formation fractions, and other uses for the proppants and methods of making the proppants.

Abstract: The invention relates to boron nitride agglomerates, comprising lamellar, hexagonal boron nitride primary particles, which are agglomerated with one another with a preferred orientation, the agglomerates formed being flake-shaped. The invention also relates to a method for producing said boron nitride agglomerates, characterized in that lamellar, hexagonal boron nitride primary particles are agglomerated in such a way that they line up with one another with a preferred orientation. The flake-shaped agglomerates according to the invention are suitable as filler for polymers for making polymer-boron nitride composites and for hot pressing of boron nitride sintered compacts.

Abstract: Disclosed is a single wall carbon nanotube (SWCNT) film electrode (FE), all-organic electroactive device systems fabricated with the SWNT-FE, and methods for making same. The SWCNT can be replaced by other types of nanotubes. The SWCNT film can be obtained by filtering SWCNT solution onto the surface of an anodized alumina membrane. A freestanding flexible SWCNT film can be collected by breaking up this brittle membrane. The conductivity of this SWCNT film can advantageously be higher than 280 S/cm. An electroactive polymer (EAP) actuator layered with the SWNT-FE shows a higher electric field-induced strain than an EAP layered with metal electrodes because the flexible SWNT-FE relieves the restraint of the displacement of the polymeric active layer as compared to the metal electrode. In addition, if thin enough, the SWNT-FE is transparent in the visible light range, thus making it suitable for use in actuators used in optical devices.

Abstract: Novel boron nitride agglomerated powders are provided having controlled density and fracture strength features. In addition methods for producing same are provided. One method calls for providing a feedstock powder including boron nitride agglomerates, and heat treating the feedstock powder to form a heat treated boron nitride agglomerated powder. In one embodiment the feedstock powder has a controlled crystal size. In another, the feedstock powder is derived from a bulk source. Devices, such as microelectronic devices and printed circuit boards, which include boron nitride agglomerates with controlled fracture strength features are also disclosed.

Abstract: This invention is directed to a process for the preparation of boron nitride powder, particularly a fine powder with a low degree of contamination, which demonstrates good caking, heat conductivity and dielectric properties. Specifically, a process for the preparation of amorphous boron nitride (a-BN) is provided wherein the process comprises: mixing powders of boric acid and a carbamide at a temperature in the range of about 250-300° C., thereby forming: ammonium polyborates; boron imide or a mixture thereof and ammonia; and heating of the materials formed in step (a) to a temperature in the range of about 500-600° C., thereby forming a powder of a-BN.

Abstract: A reaction is carried in a gaseous phase between ammonia (NH3) and boron trifluoride (BF3) in a cooled reactor under atmospheric pressure. A boron trifluoride-ammonia complex (NH3.BF3) obtained in this reaction is thermally decomposed at a temperature in the range of 125 to 300° C. into boron nitride and ammonium tetrafluoroborate in accordance with the following scheme: 125-300° C. 4NH3.BF3?BN+3NH4.BF4 BN is then separated from the mixture of BN with 3NH4.BF4 by combining the mixture with deionized water, forming a suspension, and separating the suspended BN nanoparticles by centrifugation.

Abstract: A low viscosity filler boron nitride agglomerate particles having a generally spherical shape bound together by an organic binder and to a process for producing a BN powder composition of spherically shaped boron nitride agglomerated particles having a treated surface layer which controls its viscosity.

Abstract: The present invention relates to proppants which can be used to prop open subterranean formation fractions. Proppant formulations are further disclosed which use one or more proppants of the present invention. Methods to prop open subterranean formation fractions are further disclosed. In addition, other uses for the proppants of the present invention are further disclosed, as well as methods of making the proppants.

Abstract: The invention relates to a method of manufacturing nanoscale cubic boron nitride and to the nanoscale cubic boron nitride thus obtained. The method according to the invention of manufacturing nanoscale boron nitride of cubic structure is characterized in that it comprises the following steps: a) compression of a pyrolytic boron nitride powder having a structure of the monomodal turbostratic graphite type at a pressure of between 19 and 21 GPa and at room temperature; and b) heating of the powder under a pressure of between 19 and 21 GPa and at a temperature of between 1447° C. (1720 K) and 1547° C. (1820 K) for less than 2 minutes. The invention is applicable in particular in the field of abrasives.

Abstract: A low viscosity filler boron nitride agglomerate particles having a generally spherical shape bound together by an organic binder and to a process for producing a BN powder composition of spherically shaped boron nitride agglomerated particles having a treated surface layer which controls its viscosity.

Abstract: Based on designs concerning boron nitride thin-films each including boron nitride crystals in acute-ended shapes excellent in field electron emission properties, and designs of emitters adopting such thin-films, it is aimed at appropriately controlling a distribution state of such crystals to thereby provide an emitter having an excellent efficiency and thus requiring only a lower threshold electric field for electron emission. In a design of a boron nitride thin-film emitter comprising crystals that are each represented by a general formula BN, that each include sp3 bonded boron nitride, sp2 bonded boron nitride, or a mixture thereof, and that each exhibit an acute-ended shape excellent in field electron emission property; there is controlled an angle of a substrate relative to a reaction gas flow upon deposition of the emitter from a vapor phase, thereby controlling a distribution state of the crystals over a surface of the thin-film.

Abstract: A boron nitride nanosheet containing three-layered hexagonal boron nitride, which is in a form of multi-layered hexagonal boron nitride with some its layers peeled, can be produced by dispersing pristine hexagonal boron nitride powder in an organic solvent and by subjecting the fluid dispersion to ultrasonication.

Abstract: A novel composite structural component including novel boron nitride agglomerated powders and a matrix is provided having controlled density and fracture strength features. In addition methods for producing the novel boron nitride agglomerated powders are provided. One method calls for providing a feedstock powder including boron nitride agglomerates, and heat treating the feedstock powder to form a heat treated boron nitride agglomerated powder. In one embodiment the feedstock powder has a controlled crystal size. In another, the feedstock powder is derived from a bulk source.

Abstract: A cubic boron nitride sintered material where wear resistance is suppressed from decreasing having excellent chipping resistance and a cutting tool made thereof are provided. The sintered material is constituted from cubic boron nitride particles that are bound by a binder phase, while the binder phase contains a carbide of at least one kind of metal element selected from among metals of groups 4, 5 and 6 of the periodic table and a nitride of at least one kind of metal element selected from among metals of groups 4, 5 and 6 of the periodic table coexisting therein, and therefore the particles can be suppressed from coming off and the binder phase can be suppressed from wearing and coming off at the same time, thereby making the sintered material having high wear resistance and particularly excellent chipping resistance.

Abstract: A new method is disclosed for the exfoliation of hexagonal boron nitride into mono- and few-layered nanosheets (or nanoplatelets, nanomesh, nanoribbons). The method does not necessarily require high temperature or vacuum, but uses commercially available h-BN powders (or those derived from these materials, bulk crystals) and only requires wet chemical processing. The method is facile, cost efficient, and scalable. The resultant exfoliated h-BN is dispersible in an organic solvent or water thus amenable for solution processing for unique microelectronic or composite applications.

Abstract: Spherical boron nitride nanoparticles having an average particle diameter is less than 50 nm is obtained by a method of synthesizing spherical boron nitride nanoparticles including the following steps; heating a mixture of boric acid ester and nitrogen gas in ammonia gas and argon gas to form reaction product; crystallizing reaction product to form precursor of spherical boron nitride nanoparticles; and, heating the precursor in inert gas.

Abstract: A method of activating boron nitride comprises exposing the boron nitride to a fluid enabling —OH hydroxyl radicals and/or H3O+ to be delivered and creating B—OH bonds and/or NH2 bonds in the boron nitride, and eliminating the fluid and recovering the activated boron nitride.

Abstract: Pressureless sintered high density materials containing hexagonal boron nitride have low coefficients of friction and high wear resistance and are useful for bearings, bushings and other articles subjected to bearing loads.

Abstract: A method for producing cubic boron nitride in which hBN is held in the presence of a catalyst substance under conditions in which cBN remains thermodynamically stable, to thereby cause hBN to undergo a phase transition to form cBN, wherein the catalyst substance contains a lithium source, a magnesium source, and a carbon source. The performance of cBN is improved even though phase transition ratio from hBN to cBN is increased.

Abstract: A process for producing borazane from boron-nitrogen and boron-nitrogen-hydrogen containing BNH-waste products. The process includes reacting the BNH-waste products with a hydrogen halide, having the formula HX, wherein X is selected from the group consisting of F, Cl, Br, I, and combinations thereof, to form any of the following: a boron trihalide, having the formula BX3, an ammonium halide, having the formula NH4X, and hydrogen. The boron trihalide is then reacted with the hydrogen to form diborane, having the formula B2H6, and hydrogen halide. The ammonium halide is then converted to ammonia, having the formula NH3, and hydrogen halide. The diborane is then reacted with the ammonia to form borazane, having the formula BH3NH3.

Abstract: Graphene layers, hexagonal boron nitride layers, as well as other materials made of primarily sp2 bonded atoms and associated methods are disclosed. In one aspect, for example, a method of forming a graphene layer is provided. Such a method may include mixing a carbon source with a horizontally oriented molten solvent, precipitating the carbon source from the molten solvent to form a graphite layer across the molten solvent, and separating the graphite layer into a plurality of graphene layers.

Abstract: A plasma treatment has been used to modify the surface of BNNTs. In one example, the surface of the BNNT has been modified using ammonia plasma to include amine functional groups. Amine functionalization allows BNNTs to be soluble in chloroform, which had not been possible previously. Further functionalization of amine-functionalized BNNTs with thiol-terminated organic molecules has also been demonstrated. Gold nanoparticles have been self-assembled at the surface of both amine- and thiol-functionalized boron nitride Nanotubes (BNNTs) in solution. This approach constitutes a basis for the preparation of highly functionalized BNNTs and for their utilization as nanoscale templates for assembly and integration with other nanoscale materials.

Abstract: The present invention relates to polycrystalline ultra hard material cutting elements, and more particularly to a method of forming a polycrystalline ultra hard material cutting element with a thicker ultra hard layer than cutting elements formed by prior art methods. In an exemplary embodiment, such a method includes pre-sintering the ultra hard material powder to form an ultra hard material layer that is partially or fully densified prior to HPHT sintering, so that the ultra hard layer is pre-shrunk. This pre-sintering in an exemplary embodiment is achieved by means of a spark plasma process, or in another exemplary embodiment by a microwave sintering process.

Abstract: The invention provides sharpened multi-walled nanotubes and methods for sharpening multi-walled nanotubes. The methods of the invention use an electron beam to machine the multi-walled nanotube to the desired dimensions. The invention provides sharpened boron nitride nanotubes where the radius of the end of the sharpened tip is less than about 10 nm.

Abstract: A pyrolytic boron-nitride material is disclosed having an in-plane thermal conductivity of no more than about 30 W/m-K and a through-plane thermal conductivity of no more than about 2 W/m-K. The density is less than 1.85 g/cc.

Abstract: Turbostratic boron nitride (t-BN) powder having excellent sinterability. A mixture of boric acid anhydride and urea is charged in a reaction vessel together with alkali-borate, heated step by step in the vessel in an nonoxidizing gas atmosphere of one atmospheric pressure or above, and kept at a temperature from 850° C. to 950° C. to yield an intermediate product formal substantially of an amorphous boron nitride powder (first reaction step). Then the intermediate product is heated and kept at a temperature from 1200° C. to 1400° C. to crystallize crystalline t-BN, and the product is purified by washing with water and aqueous solution to obtain pure crystalline t-BN powder.