Nitrogen Containing Patents (Class 423/290)
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Publication number: 20090117021Abstract: Boron nitride nanotubes are prepared by a process which includes: (a) creating a source of boron vapor; (b) mixing the boron vapor with nitrogen gas so that a mixture of boron vapor and nitrogen gas is present at a nucleation site, which is a surface, the nitrogen gas being provided at a pressure elevated above atmospheric, e.g., from greater than about 2 atmospheres up to about 250 atmospheres; and (c) harvesting boron nitride nanotubes, which are formed at the nucleation site.Type: ApplicationFiled: May 14, 2008Publication date: May 7, 2009Applicants: National Institute of Aerospace Associates, USA as represented by the Administrator of the National Aeronautics and Space Administration, Jefferson Science Associates, LLCInventors: Michael W. Smith, Kevin Jordan, Cheol Park
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Patent number: 7494635Abstract: Novel boron nitride agglomerated powders are provided having controlled density and fracture strength features. In addition methods for producing same are provided. One method calls for providing a feedstock powder including boron nitride agglomerates, and heat treating the feedstock powder to form a heat treated boron nitride agglomerated powder. In one embodiment the feedstock powder has a controlled crystal size. In another, the feedstock powder is derived from a bulk source.Type: GrantFiled: August 21, 2003Date of Patent: February 24, 2009Assignee: Saint-Gobain Ceramics & Plastics, Inc.Inventors: Eugene A. Pruss, Thomas M. Clere
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Patent number: 7419572Abstract: The present invention provides a sp3-bonded boron nitride, represented by a general formula BN, having a hexagonal 5H or 6H polytypic form and having a property of emitting light in ultraviolet region. Its producing method comprises: introducing reaction mixed gas containing boron and nitrogen being diluted with dilution gas into a reaction chamber; and irradiating a surface of a substrate placed in the chamber, a growing surface on the substrate, and a growing spacing region about the growing surface with ultraviolet light to cause gas phase reaction, thereby generating, depositing, or growing the boron nitride on the substrate.Type: GrantFiled: July 1, 2003Date of Patent: September 2, 2008Assignee: National Institute For Materials ScienceInventors: Shojiro Komatsu, Katsuyuki Okada, Yusuke Moriyoshi
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Publication number: 20080187479Abstract: The invention relates to a method for debindering and/or purifying granules or material suitable for use in High Pressure High Temperatures diamond or cubic boron nitride synthesis, the method comprising the steps of passing the granules or material through a zone having controlled atmosphere and temperature in a continuous manner, the zone having a maximum temperature within the zone of greater than approximately 600° C, wherein the time spent by each granule within the zone is less than 30 minutes.Type: ApplicationFiled: May 4, 2006Publication date: August 7, 2008Inventor: Mark Gregory Munday
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Patent number: 7404832Abstract: The present invention relates to a method for producing cubic boron nitride abrasive grains used for producing a grinding wheel, etc., and to cubic boron nitride abrasive grains. The method comprises maintaining a mixture containing hexagonal boron nitride and seed crystals of cubic boron nitride under pressure and temperature conditions where cubic boron nitride remains thermodynamically stable, characterized in that the seed crystals contain cubic boron nitride twin crystals.Type: GrantFiled: May 21, 2002Date of Patent: July 29, 2008Assignee: Showa Denko K.K.Inventors: Hirohiko Ohtsubo, Eiji Ihara, Takuya Okubo, Makoto Kasahara, Makoto Iizuka
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Publication number: 20080153960Abstract: A boron nitride composition comprising at least two different boron nitride powder materials having different properties, e.g., surface areas, particle size, tap density, etc.Type: ApplicationFiled: October 5, 2007Publication date: June 26, 2008Inventors: Paulo Meneghetti, Chandrashekar Raman
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Patent number: 7381391Abstract: The present invention provides compositions and a novel high-yielding process for preparing high purity Group III nitrides. The process involves heating a Group III metal and a catalytic amount of a metal wetting agent in the presence of a nitrogen source. Group III metals can be stoichiometrically converted into high purity Group III nitride powders in a short period of time. The process can provide multi-gram quantities of high purity Group III nitrides in relatively short reaction times. Detailed characterizations of GaN powder were preformed and are reported herein, including morphology and structure by SEM and XRD, optical properties by cathodoluminescence (CL), and Raman spectra to determine the quality of the GaN particles. The purity of GaN powder was found to be greater than 99.9% pure, as analyzed by Glow Discharge Mass Spectrometry (GDMS). Green, yellow, and red light emission can be obtained from doped GaN powders.Type: GrantFiled: January 5, 2007Date of Patent: June 3, 2008Assignee: Cornell Research Foundation, Inc.Inventors: Michael G. Spencer, Francis J. DiSalvo, Huaqiang Wu
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Patent number: 7371359Abstract: A non-aqueous route and process for preparation of boron nitride utilizing aerosol assisted vapor phase synthesis (AAVS) wherein boron precursors are nitrided in one or two heating steps, and wherein a boron oxide nitride carbide intermediary composition is formed after the first heating step and may be further nitrided to form resultant spheroidal boron nitride powders including dense or hollow spheroidal particles that are smooth, bladed, dense or hollow, have protruding whiskers, and are of turbostratic or hexagonal crystalline structure, specifically wherein the boron precursor is dissolved in a non-aqueous solution prior to aerosolization.Type: GrantFiled: February 12, 2007Date of Patent: May 13, 2008Assignee: STC.UNMInventor: Robert T. Paine, Jr.
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Patent number: 7361213Abstract: A hybrid hydrogen storage composition includes a first phase and a second phase adsorbed on the first phase, the first phase including BN for storing hydrogen by physisorption and the second phase including a borazane-borazine system for storing hydrogen in combined form as a hydride.Type: GrantFiled: August 22, 2005Date of Patent: April 22, 2008Assignee: UT-Battelle, LLCInventors: Chaitanya K. Narula, J. Michael Simonson, Leon Maya, Robert T. Paine
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Patent number: 7341702Abstract: A process for producing boron nitride of high purity and high thermal conductivity, wherein a oxygen-containing boron compound is reacted with a nitrogen-containing source in the presence of a dopant at a temperature of at least 1000° C. for at least one hour, and wherein the dopant forms metal borate impurities with a vaporizing temperature that is lower than the highest processing temperature in the process.Type: GrantFiled: November 3, 2005Date of Patent: March 11, 2008Assignee: Momentive Performance Materials Inc.Inventors: Donald William Pultz, Jr., Laurence Maniccia, Chandrashekar Raman, Anand Murugaiah
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Patent number: 7297317Abstract: A process for producing boron nitride using a boron containing ore as a starting material, by reacting naturally occurring ulexite with ammonia at high temperature, for a boron nitride with high impurity and at a high yield.Type: GrantFiled: November 3, 2005Date of Patent: November 20, 2007Assignee: Momentive Performance Materials Inc.Inventors: Laurence Maniccia, Donald William Pultz, Jr.
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Patent number: 7273904Abstract: Dendron ligands or other branched ligands with cross-linkable groups were coordinated to colloidal inorganic nanoparticles, including nanocrystals, and substantially globally cross-linked through different strategies, such as ring-closing metathesis (RCM), dendrimer-bridging methods, and the like. This global cross-linking reaction sealed each nanocrystal within a dendron box to yield box-nanocrystals which showed dramatically enhanced stability against chemical, photochemical and thermal treatments in comparison to the non-cross-linked dendron-nanocrystals. Empty dendron boxes possessing a very narrow size distribution were formed by the dissolution of the inorganic nanocrystals contained therein upon acid or other etching treatments.Type: GrantFiled: October 3, 2003Date of Patent: September 25, 2007Assignee: The Board of Trustees of the University of ArkansasInventors: Xiaogang Peng, Haiyan Chen, Wenzhou Guo, Y. Andrew Wang
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Patent number: 7244406Abstract: A method is provided for producing cubic boron nitride, in which a mixture containing hexagonal boron nitride and a catalyst is maintained under pressure and temperature conditions that thermodynamically favor the stable presence of cubic boron nitride, thereby forming composite lumps containing cubic boron nitride, which in turn are dissolved in an alkaline solution to recover cubic boron nitride. The method is characterized by including, prior to the dissolving step, a step of decreasing the ratio of low-pressure phase boron nitride to cubic boron nitride in the composite lumps down to 50% by mass or less.Type: GrantFiled: February 28, 2003Date of Patent: July 17, 2007Assignee: Showa Denko K.K.Inventor: Hirohiko Ohtsubo
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Patent number: 7214359Abstract: By using a CBN synthesis catalyst containing a CBN synthesis catalyst component coated with an organic substance for producing cubic boron nitride (CBN), the CBN can be produced at a high transformation ration and a high yield ratio. Each of the CBN grains produced through this method has a sharp shape with a highly developed (111) plane, exhibits high strength, and exhibits a small reduction in strength due to heating. The amount of catalyst component contained in the CBN is 7.5×10?4 mol or less per 1 mol of CBN.Type: GrantFiled: February 2, 2004Date of Patent: May 8, 2007Assignee: Showa Denko K.K.Inventors: Hirohiko Ohtsubo, Eiji Ihara, Katsuyuki Tsuji
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Patent number: 7192644Abstract: A non-aqueous route and process for preparation of boron nitride utilizing aerosol assisted vapor phase synthesis (AAVS) wherein boron precursors are nitrided in one or two heating steps, and wherein a boron oxide nitride carbide intermediary composition is formed after the first heating step and may be further nitrided to form resultant spheroidal boron nitride powders including dense or hollow spheroidal particles that are smooth, bladed, dense or hollow, have protruding whiskers, and are of turbostratic or hexagonal crystalline structure, specifically wherein the boron precursor is dissolved in a non-aqueous solution prior to aerosolization.Type: GrantFiled: July 22, 2005Date of Patent: March 20, 2007Assignee: STC.UNMInventor: Robert T. Paine, Jr.
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Patent number: 7189774Abstract: The present invention relates to a method for making boron nitride powder having a thermal diffusivity of from about 0.14 cm2/s to about 0.20 cm2/s. This method involves pressing high purity, hexagonal boron nitride having an average platelet size of at least 2 microns into a compacted form, sintering the compacted form of boron nitride to form a sintered body, and crushing the sintered body under conditions effective to produce boron nitride powder having a thermal diffusivity of from about 0.14 cm2/s to about 0.20 cm2/s. Another aspect of the present invention relates to boron nitride powder having a thermal diffusivity of from about 0.14 cm2/s to about 0.20 cm2/s.Type: GrantFiled: May 11, 2004Date of Patent: March 13, 2007Assignee: Saint-Gobain Ceramics & Plastics, Inc.Inventor: Thomas M. Clere
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Patent number: 7150862Abstract: A method of manufacturing a powder, by which it is possible to adjust the strength of the obtained powder is provided. The manufacturing method of a powder involves a step of preparing a slurry containing agglomerated particles of a synthetic material which is produced by reacting a first material and a second material under agitation, and a step of drying the slurry to obtain a powder of the synthetic material. The method has a feature that the particle size of the agglomerated particles is adjusted by, in the step of preparing a slurry, controlling agitation power for agitating the slurry. In the step of preparing a slurry, it is preferable that the slurry is initially agitated at a first agitation power, and at the time when the viscosity of the slurry approaches its maximum value, or at the time when the pH value of the slurry reaches the vicinity of the isoelectric point of the synthetic material, the agitation power is lowered from the first agitation power to a second agitation power.Type: GrantFiled: January 10, 2003Date of Patent: December 19, 2006Assignee: PENTAX CorporationInventors: Tsuyoshi Ishikawa, Masanori Nakasu, Takatoshi Kudou, Yoshiyuki Ogawara, Tsutomu Takahashi, Katsumi Kawamura
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Patent number: 7138098Abstract: A method of manufacturing a nanocrystallite from a M-containing salt forms a nanocrystallite. The nanocrystallite can be a member of a population of nanocrystallites having a narrow size distribution and can include one or more semiconductor materials. Semiconducting nanocrystallites can photoluminesce and can have high emission quantum efficiencies.Type: GrantFiled: October 8, 2004Date of Patent: November 21, 2006Assignee: Massachusetts Institute of TechnologyInventors: Moungi Bawendi, Nathan E. Stott
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Patent number: 7060237Abstract: A non-aqueous route and process for preparation of boron nitride utilizing aerosol assisted vapor phase synthesis (AAVS) wherein boron precursors are nitrided in one or two heating steps, and wherein a boron oxide nitride carbide intermediary composition is formed after the first heating step and may be further nitrided to form resultant spheroidal boron nitride powders including spheroidal particles that are smooth, bladed, have protruding whiskers, and are of turbostratic or hexagonal crystalline structure, specifically wherein the boron precursor is dissolved in a non-aqueous solution prior to aerosolization.Type: GrantFiled: October 24, 2002Date of Patent: June 13, 2006Assignee: Science & Technology Corporation @ UNMInventors: Robert T. Paine, Jr., Gary L. Wood, Jerzy F. Janik, William J. Kroenke
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Patent number: 7014826Abstract: A method for producing cubic boron nitride includes maintaining hexagonal boron nitride in the presence of a catalyst substance under conditions where cubic boron nitride remains thermodynamically stable to thereby transform hexagonal boron nitride into cubic boron nitride, wherein the catalyst substance contains LiMBN2, in which M represents Ca, Sr, Ba, Ra, Be, or Mg, and at least one species selected from the group consisting of alkali metals, alkaline earth metals, nitrides thereof and boronitrides thereof. Any one of the LiMBN2, alkali metals, alkaline earth metals, nitrides thereof and boronitrides thereof has an oxygen content of 1% or less. As a result, the percent transformation into cubic boron nitride can be considerably enhanced, and the cubic boron nitride obtained exhibits high mechanical strength.Type: GrantFiled: March 27, 2002Date of Patent: March 21, 2006Assignee: Showa Dendo K.K.Inventor: Makoto Iizuka
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Patent number: 7001577Abstract: A method for improving the toughness of a CBN product made by a high temperature/high pressure (HP/HT) process commences by forming a blend of an oxygen getter and CBN product-forming feedstock. The blend is subjected to a CBN high temperature/high pressure (HP/HT) process for forming a CBN product. The amount of oxygen getter in the blend is sufficient to improve the toughness of the CBN product. The resulting CBN product desirably has an oxygen content of less than about 300 ppm. Oxygen getters include Al, Si, and Ti. The HP/HT process is conducted in the absence or presence of catalytic materials.Type: GrantFiled: November 2, 2001Date of Patent: February 21, 2006Assignee: Diamond innovaitons, Inc.Inventors: Michael H. Zimmerman, Erik O. Einset
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Patent number: 6984448Abstract: A cubic boron nitride cluster comprises a core (10) and an overgrown region, the overgrown region containing a plurality of cubic boron nitride crystallites (12) extending outwards from the core (10). The majority of the cubic boron nitride crystallites (12) have a cross-sectional area which increases as the distance from the core (10) increases. A method of producing cubic boron nitride clusters is also provided.Type: GrantFiled: November 17, 2000Date of Patent: January 10, 2006Inventors: Geoffrey John Davies, Raymond Albert Chapman, Lesley Kay Hedges, Aulette Stewart, Bronwyn Annette Roberts
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Patent number: 6953539Abstract: A composite material includes an SiC porous ceramic sintered body, which is formed by preliminarily sintering a porous body, having a coefficient of thermal expansion lower than the coefficient of thermal expansion of copper to construct a network therein. A copper alloy impregnating the porous ceramic sintered body includes copper and one or more additive elements which are prepared to impart a coefficient of thermal conductivity of 160 W/mK or higher to the composite material. The additive elements include up to 5% of at least one element selected from Be, Al, Si, Mg, Ti, Ni, Bi, Te, Zn, Pb, Sn, and mish metal, and also contain unavoidable impurities and gas components.Type: GrantFiled: September 18, 2002Date of Patent: October 11, 2005Assignee: NGK Insulators, Ltd.Inventors: Shuhei Ishikawa, Tsutomu Mitsui, Ken Suzuki, Nobuaki Nakayama, Hiroyuki Takeuchi, Seiji Yasui
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Publication number: 20040265203Abstract: A CBN synthesis catalyst containing a CBN synthesis catalyst component coated with an organic substance is used for producing cubic boron nitride (CBN). The amount by mass of the organic substance is preferably contained 0.01 to 50 parts by mass based on 100 parts by mass of the CBN synthesis catalyst component. The organic substance is preferably stearic acid and/or lauric acid. By use of such a CBN synthesis catalyst, a CBN crystal which has a sharp shape, with the (111) place being developed, and which contains a small amount of a catalyst component(s) incorporated into CBN can be produced at high productivity (percent transformation (high yield)) in a simple manner and operation.Type: ApplicationFiled: February 2, 2004Publication date: December 30, 2004Applicant: SHOWA DENKO K.K.Inventors: Hirohiko Ohtsubo, Eiji Ihara, Katsuyuki Tsuji
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Patent number: 6824753Abstract: An organoboron route and process for preparation of boron nitride utilizing aerosol assisted vapor phase synthesis (AAVS) wherein organoboron precursors are nitrided in one or two heating steps, and wherein a boron oxide nitride intermediary composition is formed after the first heating step and may be further nitrided to form resultant spheroidal boron nitride powders including spheroidal particles that are smooth, bladed, have protruding whiskers, and are of turbostratic or hexagonal crystalline structure.Type: GrantFiled: April 23, 2002Date of Patent: November 30, 2004Assignee: Science & Technology Corporation @UNMInventors: Robert T. Paine, William J. Kroenke, Eugene A. Pruss, Gary L. Wood, Jerzy F. Janik
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Patent number: 6794435Abstract: The present invention relates to a powder including agglomerates of hexagonal boron nitride platelets, wherein the agglomerates have an agglomerate size distribution of from about 10 to about 125 microns and the powder is substantially free of non-agglomerated platelets of boron nitride and its use in a polymer blend. The present invention also relates to a method of making a powder including agglomerates of hexagonal boron nitride platelets. This method involves providing a briquette formed from agglomerated hexagonal boron nitride platelets, crushing the briquette to produce a powder including hexagonal boron nitride agglomerates and non-agglomerated boron nitride platelets, and removing the non-agglomerated boron nitride platelets from the powder under conditions effective to produce a powder including agglomerates of hexagonal boron nitride platelets having an agglomerate size distribution of from about 10 to about 125 microns.Type: GrantFiled: May 18, 2001Date of Patent: September 21, 2004Assignee: Saint Gobain Ceramics & Plastics, Inc.Inventor: Thomas M. Clere
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Patent number: 6774074Abstract: The invention concerns a method for making boron nitride fibers by drawing a polymer precursor and treating with ceramics the polymer fibers obtained by drawing. The invention is characterized in that the precursor polymer is obtained by thermal polymerization of a borazine of formula (I) wherein: R1, R3, R4 and R5, identical or different, represent an alkyl, cycloalkyl or aryl group; and R2 represents a hydrogen atom or an alkyl, cycloalkyl or aryl group.Type: GrantFiled: September 6, 2002Date of Patent: August 10, 2004Assignee: Eads Launch VehiclesInventors: Loïc Rousseau, Jean-Christophe Pasquet, Samuel Bernard, Marie-Paule Berthet, Jean Bouix, David Cornu, Philippe Mielé, Bérangère Toury, Pascaline Toutois, Christiane Vincent
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Patent number: 6764975Abstract: The present invention relates to a method for making boron nitride powder having a thermal diffusivity of from about 0.14 cm2/s to about 0.20 cm2/s. This method involves pressing high purity, hexagonal boron nitride having an average platelet size of at least 2 microns into a compacted form, sintering the compacted form of boron nitride to form a sintered body, and crushing the sintered body under conditions effective to produce boron nitride powder having a thermal diffusivity of from about 0.14 cm2/s to about 0.20 cm2/s. Another aspect of the present invention relates to boron nitride powder having a thermal diffusivity of from about 0.14 cm2/s to about 0.20 cm2/s.Type: GrantFiled: November 28, 2000Date of Patent: July 20, 2004Assignee: Saint-Gobain Ceramics & Plastics, Inc.Inventor: Thomas M. Clere
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Patent number: 6737377Abstract: The object of the present invention is to provide a cutting tool consisting of fine grain cBN free from a binder and having a grain size of at most 1 &mgr;m and having a high hardness, high strength and excellent heat resistance. The feature thereof consists in a cutting tool compring, as an edge part, a cubic boron nitride sintered compact containing cubic boron nitride having an average grain diameter of at most 1 &mgr;m, in which the cubic boron nitride sintered compact has, at the said edge part, an I(220)/I(111) of (220) diffraction intensity (I(220)) to (111) diffraction intensity (I(111)) ratio of at least 0.05 in X-ray diffraction of arbitrary direction and impurities are substantially not contained in the grain boundaries.Type: GrantFiled: January 18, 2000Date of Patent: May 18, 2004Assignee: Sumitomo Electric Industries, Ltd.Inventors: Hitoshi Sumiya, Shinya Uesaka
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Publication number: 20040076572Abstract: The present invention relates to a powder comprising boron nitride particles having an aspect ratio of from about 50 to about 300. The present invention also relates to a method of making delaminated boron nitride powder. This method involves providing boron nitride powder and milling the boron nitride powder in a mixture including a milling media and a milling liquid under conditions effective to produce delaminated boron nitride powder.Type: ApplicationFiled: October 16, 2003Publication date: April 22, 2004Inventors: Thomas M. Clere, Severine M. Laboure
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Patent number: 6660241Abstract: The present invention relates to a powder comprising boron nitride particles having an aspect ratio of from about 50 to about 300. The present invention also relates to a method of making delaminated boron nitride powder. This method involves providing boron nitride powder and milling the boron nitride powder in a mixture including a milling media and a milling liquid under conditions effective to produce delaminated boron nitride powder.Type: GrantFiled: April 26, 2001Date of Patent: December 9, 2003Assignee: Saint-Gobain Ceramics & Plastics, Inc.Inventors: Thomas M. Clere, Séverine M. Labouré
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Patent number: 6652822Abstract: Spherical and polyhedral particles of boron nitride and method of preparing them. Spherical and polyhedral particles of boron nitride are produced from precursor particles of hexagonal phase boron nitride suspended in an aerosol gas. The aerosol is directed to a microwave plasma torch. The torch generates plasma at atmospheric pressure that includes nitrogen atoms. The presence of nitrogen atoms is critical in allowing boron nitride to melt at atmospheric pressure while avoiding or at least minimizing decomposition. The plasma includes a plasma hot zone, which is a portion of the plasma that has a temperature sufficiently high to melt hexagonal phase boron nitride. In the hot zone, the precursor particles melt to form molten particles that acquire spherical and polyhedral shapes. These molten particles exit the hot zone, cool, and solidify to form solid particles of boron nitride with spherical and polyhedral shapes.Type: GrantFiled: May 17, 2001Date of Patent: November 25, 2003Assignee: The Regents of the University of CaliforniaInventors: Jonathan Phillips, Seth S. Gleiman, Chun-Ku Chen
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Patent number: 6645612Abstract: The present invention relates to a method for making a hexagonal boron nitride slurry and the resulting slurry. The method involves mixing from about 0.5 wt. % to about 5 wt. % surfactant with about 30 wt. % to about 50 wt. % hexagonal boron nitride powder in a medium under conditions effective to produce a hexagonal boron nitride slurry. The present invention also relates to a method for making a spherical boron nitride powder and a method for making a hexagonal boron nitride paste using a hexagonal boron nitride slurry. Another aspect of the present invention relates to a hexagonal boron nitride paste including from about 60 wt. % to about 80 wt. % solid hexagonal boron nitride. Yet another aspect of the present invention relates to a spherical boron nitride powder, a polymer blend including a polymer and the spherical hexagonal boron nitride powder, and a system including such a polymer blend.Type: GrantFiled: August 7, 2001Date of Patent: November 11, 2003Assignee: Saint-Gobain Ceramics & Plastics, Inc.Inventors: Vimal K. Pujari, William T. Collins, Jeffrey J. Kutsch
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Patent number: 6627168Abstract: An object of the present invention is to provide a method for producing diamond and cubic boron nitride crystals having excellent mechanical strength and high regularity in particle size with high productivity, wherein seed crystals are efficiently placed in a regular pattern on a supporting plate or a raw material plate.Type: GrantFiled: October 2, 2000Date of Patent: September 30, 2003Assignee: Showa Denko Kabushiki KaishaInventors: Hirohiko Ohtsubo, Tetsuro Sakurai
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Publication number: 20030180206Abstract: The present invention concerns high performance boron nitride fibres and a process for manufacturing said fibres.Type: ApplicationFiled: January 17, 2003Publication date: September 25, 2003Applicant: EADS LAUNCH VEHICLESInventors: Philippe Miele, Berangere Toury, David Cornu, Samuel Bernard, Marie-Paule Berthet, Loic Rousseau, Guy Beauhaire
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Publication number: 20030170161Abstract: A method for producing cubic boron nitride includes maintaining hexagonal boron nitride in the presence of a catalyst substance under conditions where cubic boron nitride remains thermodynamically stable to thereby transform hexagonal boron nitride into cubic boron nitride, wherein the catalyst substance contains LiMBN2, in which M represents Ca, Sr, Ba, Ra, Be, or Mg, and at least one species selected from the group consisting of alkali metals, alkaline earth metals, nitrides thereof and boronitrides thereof. Any one of the LiMBN2, alkali metals, alkaline earth metals, nitrides thereof and boronitrides thereof has an oxygen content of 1% or less. As a result, the percent transformation into cubic boron nitride can be considerably enhanced, and the cubic boron nitride obtained exhibits high mechanical strength.Type: ApplicationFiled: February 13, 2003Publication date: September 11, 2003Inventor: Makoto Iizuka
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Publication number: 20030099587Abstract: A method for improving the toughness of a CBN product made by a high temperature/high pressure (HP/HT) process commences by forming a blend of an oxygen getter and CBN product-forming feedstock. The blend is subjected to a CBN high temperature/high pressure (HP/HT) process for forming a CBN product. The amount of oxygen getter in the blend is sufficient to improve the toughness of the CBN product. The resulting CBN product desirably has an oxygen content of less than about 300 ppm. Oxygen getters include Al, Si, and Ti. The HP/HT process is conducted in the absence or presence of catalytic materials.Type: ApplicationFiled: November 2, 2001Publication date: May 29, 2003Inventors: Michael H. Zimmerman, Erik O. Einset
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Patent number: 6541111Abstract: The present invention provides a polycrystalline hexagonal boron nitride compound comprising fine crystals of the order of nanometers. The present invention also provides a hexagonal boron nitride characterized in that the boron nitride is 20 to 200 nm in mean particle size and comprises at least 80 wt. % of particles having sizes in the range of the mean particle size±30%. The present invention further provides a fine hexagonal boron nitride powder characterized in that the powder comprises particles in the form of circular disks or elliptical disks having a minor axis La, a major axis Lb and a thickness t which satisfy the following expressions. 50 nm≦La≦Lb≦400 nm 20 nm≦t≦150 nm t≦La 0.5≦La/Lb≦1.0.Type: GrantFiled: September 27, 2001Date of Patent: April 1, 2003Assignee: Otsuka Kagaku Kabushiki KaishaInventors: Faustinus Fauzi, Masato Tani, Masayoshi Suzue
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Patent number: 6508996Abstract: hBN is converted to cBN by keeping it under temperature and pressure conditions within the range of stability of cubic boron nitride, in the presence of at least one compound selected from amides, imides and carbides of alkali metals and alkaline earth metals, as well as a silicon source and/or a boron source.Type: GrantFiled: February 7, 2001Date of Patent: January 21, 2003Assignee: Showa Denko K.K.Inventors: Kousuke Shioi, Eiji Ihara
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Publication number: 20020172635Abstract: Spherical and polyhedral particles of boron nitride and method of preparing them. Spherical and polyhedral particles of boron nitride are produced from precursor particles of hexagonal phase boron nitride suspended in an aerosol gas. The aerosol is directed to a microwave plasma torch. The torch generates plasma at atmospheric pressure that includes nitrogen atoms. The presence of nitrogen atoms is critical in allowing boron nitride to melt at atmospheric pressure while avoiding or at least minimizing decomposition. The plasma includes a plasma hot zone, which is a portion of the plasma that has a temperature sufficiently high to melt hexagonal phase boron nitride. In the hot zone, the precursor particles melt to form molten particles that acquire spherical and polyhedral shapes. These molten particles exit the hot zone, cool, and solidify to form solid particles of boron nitride with spherical and polyhedral shapes.Type: ApplicationFiled: May 17, 2001Publication date: November 21, 2002Inventors: Jonathan Phillips, Seth S. Gleiman, Chun-Ku Chen
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Publication number: 20020155052Abstract: An organoboron route and process for preparation of boron nitride utilizing aerosol assisted vapor phase synthesis (AAVS) wherein organoboron precursors are nitrided in one or two heating steps, and wherein a boron oxide nitride intermediary composition is formed after the first heating step and may be further nitrided to form resultant spheroidal boron nitride powders including spheroidal particles that are smooth, bladed, have protruding whiskers, and are of turbostratic or hexagonal crystalline structure.Type: ApplicationFiled: April 23, 2002Publication date: October 24, 2002Inventors: Robert T. Paine, William J. Kroenke, Eugene A. Pruss, Gary L. Wood, Jerzy F. Janik
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Patent number: 6406677Abstract: Processes are provided for preparation of precursors of Group III-V compounds, i.e., nitrides, phosphides, arsenides, antimonides and bismuthides of boron, aluminum, gallium and indium. The precursors are easily converted, e.g., by thermal decomposition, to the Group III-V compounds which are useful as thin-film coatings for aerospace components or as powders which may be shaped as desired.Type: GrantFiled: July 12, 1999Date of Patent: June 18, 2002Assignee: Eltron Research, Inc.Inventors: Michael T. Carter, William J. Donahue
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Patent number: 6383465Abstract: Cubic boron nitride which is obtained from a gas phase without using an ultra-high pressure and which distinctly shows, in the Raman spectrum, either characteristic scattering by phonon of an optical longitudinal wave mode at 1305±15 cm−1 or characteristic scattering by phonon of an optical transverse wave mode at 1056±15 cm−1, or both characteristic scatterings.Type: GrantFiled: March 7, 2000Date of Patent: May 7, 2002Assignee: National Institute for Research in Inorganic MaterialsInventors: Seiichirou Matsumoto, Zhang Wenjun
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Publication number: 20020006373Abstract: The present invention relates to a powder including agglomerates of hexagonal boron nitride platelets, wherein the agglomerates have an agglomerate size distribution of from about 10 to about 125 microns and the powder is substantially free of non-agglomerated platelets of boron nitride and its use in a polymer blend. The present invention also relates to a method of making a powder including agglomerates of hexagonal boron nitride platelets. This method involves providing a briquette formed from agglomerated hexagonal boron nitride platelets, crushing the briquette to produce a powder including hexagonal boron nitride agglomerates and non-agglomerated boron nitride platelets, and removing the non-agglomerated boron nitride platelets from the powder under conditions effective to produce a powder including agglomerates of hexagonal boron nitride platelets having an agglomerate size distribution of from about 10 to about 125 microns.Type: ApplicationFiled: May 18, 2001Publication date: January 17, 2002Inventor: Thomas M. Clere
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Publication number: 20020006511Abstract: The present invention relates to a powder comprising boron nitride particles having an aspect ratio of from about 50 to about 300. The present invention also relates to a method of making delaminated boron nitride powder. This method involves providing boron nitride powder and milling the boron nitride powder in a mixture including a milling media and a milling liquid under conditions effective to produce delaminated boron nitride powder.Type: ApplicationFiled: April 26, 2001Publication date: January 17, 2002Inventor: Thomas M. Clere
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Patent number: 6319602Abstract: The present invention provides a polycrystalline hexagonal boron nitride compound comprising fine crystals of the order of nanometers. The present invention also provides a hexagonal boron nitride characterized in that the boron nitride is 20 to 200 nm in mean particle size and comprises at least 80 wt. % of particles having sizes in the range of the mean particle size ±30%. The present invention further provides a fine hexagonal boron nitride powder characterized in that the powder comprises particles in the form of circular disks or elliptical disks having a minor axis La, a major axis Lb and a thickness t which satisfy the following expressions 50 nm≦La≦Lb≦400 nm 20 nm≦t≦150 nm t≦La 0.5≦La/Lb≦1.0.Type: GrantFiled: February 5, 1999Date of Patent: November 20, 2001Assignee: Otsuka Kagaku Kabushiki KaishaInventors: Faustinus Fauzi, Masato Tani, Masayoshi Suzue
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Patent number: 6306358Abstract: Turbostratic boron nitride (t-BN) powder having excellent sinterability. A mixture of boric acid anhydride and urea is charged in a reaction vessel together with alkali-borate, heated step by step in the vessel in an nonoxidizing gas atmosphere of one atmospheric pressure or above, and kept at a temperature from 850° C. to 950° C. to yield an intermediate product formal substantially of an amorphous boron nitride powder (first reaction step). Then the intermediate product is heated and kept at a temperature from 1200° C. to 1400° C. to crystallize crystalline t-BN, and the product is purified by washing with water and aqueous solution to obtain pure crystalline t-BN powder.Type: GrantFiled: June 2, 1998Date of Patent: October 23, 2001Inventor: Osamu Yamamoto
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Patent number: 6299805Abstract: A sealing member is produced from form-pressed boron nitride powder, while adding an inorganic or organic binding agent. Such boron nitride powder is obtained during the machining of boron nitride blocks composed of hexagonal boron nitride. This powder can be fractionated according to particle size and the particle size desired for manufacturing the sealing member can be separated out.Type: GrantFiled: July 9, 1999Date of Patent: October 9, 2001Assignee: Robert Bosch GmbHInventors: Karl-Hermann Friese, Helmut Weyl, Anton Hans
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Publication number: 20010018036Abstract: hBN is converted to cBN by keeping it under temperature and pressure conditions within the range of stability of cubic boron nitride, in the presence of at least one compound selected from amides, imides and carbides of alkali metals and alkaline earth metals, as well as a silicon source and/or a boron source.Type: ApplicationFiled: February 7, 2001Publication date: August 30, 2001Inventors: Kousuke Shioi, Eiji Ihara
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Patent number: 6277348Abstract: The present invention relates to: a novel process for the preparation of mesophasic polyborazylene. Said process is of particular value in that it affords a quality product from an appropriate polyborazylene, rapidly (virtually instantaneously), reproducibly and with a good yield. Furthermore, said process is easy to carry out. Said process comprises the preparation of polyborazylene by the polycondensation of borazine in a closed reactor and the addition, to said polyborazylene obtained by polycondensation, of a solvent selected from aromatic solvents, borazine solvents and mixtures thereof, mesophasic polyborazylene which is novel in that it is in the presence of a particular solvent and/or by virtue of its quality, the use of said polyborazylene of the invention, and/or prepared according to the invention, as a boron nitride precursor.Type: GrantFiled: December 27, 1999Date of Patent: August 21, 2001Assignee: Societe Nationale d'Etude et de Construction de Moteurs d'Aviation-S.N.E.C.M.A.Inventors: Patrick Pujol, Marc Birot, Jean-Paul Pillot, Xavier Bourrat, Olivier Manfe, René Pailler, Roger Naslain, Jacques Dunogues