From Silicon Containing Compound Patents (Class 423/349)
  • Patent number: 11932964
    Abstract: A polycrystalline silicon material for producing silicon single crystal, containing a plurality of polycrystalline silicon chunks, in which assuming that a total concentration of donor elements present inside a bulk body of the polycrystalline silicon material is Cd1 [ppta], a total concentration of acceptor elements present inside the bulk body of the polycrystalline silicon material is Ca1 [ppta], a total concentration of the donor elements present on a surface of the polycrystalline silicon material is Cd2 [ppta], and a total concentration of the acceptor elements present on the surface of the polycrystalline silicon material is Ca2 [ppta], Cd1, Ca1, Cd2, and Ca2 satisfy a relation of 5 [ppta]?(Ca1+Ca2)?(Cd1+Cd2)?26 [ppta].
    Type: Grant
    Filed: April 2, 2020
    Date of Patent: March 19, 2024
    Assignee: Tokuyama Coporation
    Inventors: Takuya Asano, Kouichi Saiki, Miki Emoto, Tooru Onoda
  • Patent number: 11826717
    Abstract: The present invention provides a microwave pyrolysis reactor (1) comprising an inner pipe element (2), a microwave distribution element (3) and a housing (4), wherein the inner pipe element (2) is made of a microwave transparent material and comprises a first open end (5) and a second open end (6); the microwave distribution element (3) is made of a material not transparent to microwaves and is arranged around the inner pipe element (2), and comprises at least one opening (8) for allowing passage of microwaves into the inner pipe element (2); the housing (4) comprises a first inner surface enclosing a first annular space (9) around the microwave distribution element (3) and a port (13) for a microwave waveguide (14) in communication with the first annular space; and wherein the microwave distribution element is in thermal conductive contact with a heat exchange system for removal of heat from the microwave pyrolysis reactor during use.
    Type: Grant
    Filed: March 26, 2018
    Date of Patent: November 28, 2023
    Assignee: Scanship AS
    Inventor: Asgeir Wien
  • Patent number: 11767611
    Abstract: Methods for producing monocrystalline silicon ingots by horizontal magnetic field Czochralski are disclosed. During growth of the neck and/or growth of at least a portion of the crown, a magnetic field is not applied to the neck and/or crown or a relatively weak magnetic field of 1500 gauss or less is applied. A horizontal magnetic field (e.g., greater than 1500 gauss) is applied during growth of the ingot main body.
    Type: Grant
    Filed: May 25, 2021
    Date of Patent: September 26, 2023
    Assignee: GlobalWafers Co., Ltd.
    Inventors: JaeWoo Ryu, Carissima Marie Hudson, JunHwan Ji, WooJin Yoon
  • Patent number: 11718909
    Abstract: An assembly for the deposition of silicon nanostructures comprising a deposition chamber, which is defined by a side wall and by two end walls; a microwave generator, which is adapted to generate microwaves inside the deposition chamber; an electromagnetic termination wall, made of a conductor material and reflecting the microwave radiation, which is such as to create a termination for a TE-mode waveguide and is housed inside the deposition chamber; and a substrate-carrier support, which is made of a dielectric material and on which the substrate is housed on which to perform the growth of silicon nanostructures. The substrate-carrier support is arranged inside the deposition chamber above the termination wall.
    Type: Grant
    Filed: September 21, 2018
    Date of Patent: August 8, 2023
    Inventor: Fabrizio Palma
  • Patent number: 11545343
    Abstract: A rotary plasma reactor system is provided. In another aspect, a plasma reactor is rotatable about a generally horizontal axis within a vacuum chamber. A further aspect employs a plasma reactor, a vacuum chamber, and an elongated electrode internally extending within a central area of the reactor. Yet another aspect employs a plasma reactor for use in activating, etching and/or coating tumbling workpiece material.
    Type: Grant
    Filed: January 15, 2020
    Date of Patent: January 3, 2023
    Assignee: Board of Trustees of Michigan State University
    Inventors: Qi Hua Fan, Martin E. Toomajian
  • Patent number: 11541351
    Abstract: A method for removing boron is provided, which includes (a) mixing a carbon source material and a silicon source material in a chamber to form a solid state mixture, (b) heating the solid state mixture to a temperature of 1000° C. to 1600° C., and adjusting the pressure of the chamber to 1 torr to 100 torr. The method also includes (c) conducting a gas mixture of a first carrier gas and water vapor into the chamber to remove boron from the solid state mixture, and (d) conducting a second carrier gas into the chamber.
    Type: Grant
    Filed: May 21, 2021
    Date of Patent: January 3, 2023
    Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Ta-Ching Hsiao, Chu-Pi Jeng, Kuo-Lun Huang, Mu-Hsi Sung, Keng-Yang Chen, Li-Duan Tsai
  • Patent number: 11542603
    Abstract: A technique capable of suppressing an adhesion of deposits to an inside of a reaction vessel of a substrate processing apparatus is described. According to one aspect thereof, there is provided a substrate processing apparatus including: a substrate retainer provided with a substrate support region; a heat insulator provided below the substrate support region; and a reaction vessel of a cylindrical shape in which the substrate retainer and the heat insulator are accommodated, wherein the reaction vessel includes: an auxiliary chamber protruding outward in a radial direction of the reaction vessel and extending along an extending direction from at least a position below an upper end of the heat insulator to a position facing the substrate support region; and a first cover provided in the auxiliary chamber along a plane perpendicular to the extending direction of the auxiliary chamber so as to divide an inner space of the auxiliary chamber.
    Type: Grant
    Filed: September 15, 2021
    Date of Patent: January 3, 2023
    Assignee: Kokusai Electric Corporation
    Inventor: Hirohisa Yamazaki
  • Patent number: 11527750
    Abstract: A main object of the present disclosure is to provide an active material whose volume variation due to charge and discharge is small. The present disclosure achieves the object by providing an active material comprising a primary particle including at least one crystal phase of a Type I silicon clathrate and a Type II silicon clathrate, and the primary particle includes a void inside thereof.
    Type: Grant
    Filed: October 30, 2019
    Date of Patent: December 13, 2022
    Assignee: TOYOTA JIDOSHA KABUSHIKI KAISHA
    Inventors: Daichi Kosaka, Jun Yoshida, Tetsuya Waseda, Takamasa Otomo
  • Patent number: 11499245
    Abstract: Additive feed systems for feeding at least two different additives to silicon disposed within a crucible of an ingot puller apparatus are disclosed. The additive feed system may include first and second feed trays which are caused to vibrate to move first or second additive from a canister in which the additive is stored to another vessel in which the amount of first or second additive added to the vessel is sensed. The additive is discharged from the vessel into an additive feed tube through which the additive enters the crucible.
    Type: Grant
    Filed: December 30, 2020
    Date of Patent: November 15, 2022
    Assignee: GLOBALWAFERS CO., LTD.
    Inventors: Marco Zardoni, Giancarlo Zago, Giorgio Agostini, Stephan Haringer, James Eoff
  • Patent number: 11459278
    Abstract: The invention relates to a coating method for energetic material (12), in particular in a vacuum. The energetic material (12) is coated by chemical or physical vapor deposition. The coating material (16) is electrically conductive and/or hydrophobic or hydrophilic. The energetic material (12) is shaped as grains and/or pellets and/or is in the form of a powder.
    Type: Grant
    Filed: April 9, 2020
    Date of Patent: October 4, 2022
    Inventor: Christof-Herbert Diener
  • Patent number: 11404620
    Abstract: A semiconductor sintered body comprising a polycrystalline body, wherein the polycrystalline body comprises magnesium silicide or an alloy containing magnesium silicide, and the average grain size of the crystal grains constituting the polycrystalline body is 1 ?m or less, and the electrical conductivity is 10,000 S/m or higher.
    Type: Grant
    Filed: May 17, 2018
    Date of Patent: August 2, 2022
    Assignee: NITTO DENKO CORPORATION
    Inventor: Naoki Sadayori
  • Patent number: 11374158
    Abstract: A semiconductor sintered body comprising a polycrystalline body, wherein the polycrystalline body comprises magnesium silicide or an alloy containing magnesium silicide, and the average grain size of the crystal grains constituting the polycrystalline body is 1 ?m or less, and the electrical conductivity is 10,000 S/m or higher.
    Type: Grant
    Filed: May 17, 2018
    Date of Patent: June 28, 2022
    Assignee: NITTO DENKO CORPORATION
    Inventor: Naoki Sadayori
  • Patent number: 10974218
    Abstract: A subject of the invention is a fluidized-bed reactor for producing granular polycrystalline silicon. The fluidized-bed reactor comprises a segmented reactor tube, which is disposed between a reactor top and a reactor bottom, a heating facility, at least one nozzle for supplying fluidizing gas, at least one nozzle for supplying reaction gas, a facility for supplying silicon seed particles, a product removal line, and an offgas removal line. The segmented reactor tube comprises a base segment and at least one spacer segment, there being disposed, between base segment and spacer segment, a flat seal made from a carbon-containing material, the spacer segment consisting of a material which, within a temperature range from 100 to 950° C., has a thermal conductivity of <2 W/mK.
    Type: Grant
    Filed: August 23, 2017
    Date of Patent: April 13, 2021
    Assignee: Wacker Chemie AG
    Inventors: Simon Pedron, Bernhard Baumann, Gerhard Forstpointner
  • Patent number: 10787364
    Abstract: A device for making a carbon nanotube array includes a chamber, a gas diffusing unit, and a gas transporting pipe. The chamber defines a first inlet and a second inlet spaced apart from each other. The gas diffusing unit is in the chamber, and the gas diffusing unit is a hollow structure and defines a space, a first through hole, and an outlet. The gas transporting pipe has a first end and a second end opposite to the first end. The first end extends out of the chamber from the second inlet, and the second end is in the chamber and connected to the first through hole. The present application also relates to a method for making the carbon nanotube array.
    Type: Grant
    Filed: October 10, 2018
    Date of Patent: September 29, 2020
    Assignees: Tsinghua University, HON HAI PRECISION INDUSTRY CO., LTD.
    Inventors: Liang Liu, Qi Cai, Shou-Shan Fan
  • Patent number: 10640385
    Abstract: A core wire holder 3 attached on an electrode 2 placed on a bottom panel of a device 20 for producing silicon by Siemens process includes a silicon core wire holding portion 9 being generally circular truncated cone-shaped, and holding and energizing a silicon core wire 4. The silicon core wire holding portion 9 includes a generally circular truncated cone having an upper surface formed with a silicon core wire insertion hole 7 for holding the silicon core wire 4, and the silicon core wire holding portion 9 includes an upper surface and a side surface, which form a ridge having a curved surface and serving as a chamfered portion 8.
    Type: Grant
    Filed: October 30, 2015
    Date of Patent: May 5, 2020
    Assignee: TOKUYAMA CORPORATION
    Inventor: Haruyuki Ishida
  • Patent number: 10407309
    Abstract: Production of polycrystalline silicon in substantially closed-loop processes and systems is disclosed. The processes and systems generally involve disproportionation of trichlorosilane to produce silane or dichlorosilane and thermal decomposition of silane or dichlorosilane to produce polycrystalline silicon.
    Type: Grant
    Filed: December 24, 2014
    Date of Patent: September 10, 2019
    Assignee: Corner Star Limited
    Inventors: Puneet Gupta, Yue Huang, Satish Bhusarapu
  • Patent number: 10141563
    Abstract: A negative-electrode active material is used, the negative-electrode active material including: a nanometer-size silicon material produced by heat treating a lamellar polysilane having a structure in which multiple six-membered rings constituted of a silicon atom are disposed one after another, and expressed by a compositional formula, (SiH)n; and the nanometer-size silicon material including silicon, and a halogen element wherein the halogen element is included in a molar fraction of 11.5 or less to a molar amount of the silicon taken as 100. Since the content of halogen has been reduced, an electric storage apparatus using the negative-electrode active material for one of the negative electrodes has an upgraded capacity maintained rate.
    Type: Grant
    Filed: January 31, 2014
    Date of Patent: November 27, 2018
    Assignee: KABUSHIKI KAISHA TOYOTA JIDOSHOKKI
    Inventor: Kayoko Yukawa
  • Patent number: 10100439
    Abstract: Processes and systems to fabricate high throughput, low cost tubular polysilicon feed rods, which can be used as direct feedstock to grow a crystalline silicon material, are disclosed. In an example, a chemical vapor deposition (CVD) process includes depositing polysilicon on a tubular electrode to form a tubular polysilicon feed rod. The tubular polysilicon feed rod may be melted in a float zone process to grow the single-crystalline silicon material.
    Type: Grant
    Filed: May 2, 2016
    Date of Patent: October 16, 2018
    Assignee: SunPower Corporation
    Inventor: Moon Chun
  • Patent number: 9988277
    Abstract: Granular polysilicon is produced in a fluidized-bed reactor by fluidizing silicon particles by means of a gas flow in a fluidized bed heated to a temperature of 850-1100° C., adding a silicon-containing reaction gas by means of a nozzle and depositing of silicon on the silicon particles, wherein, in at least 56% of an axially symmetric region around a nozzle opening of the nozzle, the reaction gas concentration is greater than 75% of the maximum concentration of the reaction gas (10 to 50 mol %), the fluidized-bed temperature is greater than 95% of the fluidized-bed temperature outside the axially symmetric region (850-1100° C.) and the solids concentration is greater than 85% of the solids concentration at the edge of the fluidized bed (55 to 90% by volume).
    Type: Grant
    Filed: April 15, 2014
    Date of Patent: June 5, 2018
    Assignee: WACKER CHEMIE AG
    Inventors: Dirk Weckesser, Harald Hertlein
  • Patent number: 9937436
    Abstract: In this method for refining silicon by vacuum melting, the falling of impurity condensate from an impurity trap located above a crucible and contamination of the molten silicon are prevented. A crucible for housing molten silicon, and a heating means for heating the crucible are located inside a treatment chamber equipped with a vacuum pump; further provided are: an impurity trap having an impurity condensation unit for cooling and condensing the vapor of impurities evaporating from the liquid surface of the molten silicon; and a contamination prevention device for preventing contamination of the molten silicon, having an impurity catch unit for catching impurities when impurities trapped by the impurity trap fall.
    Type: Grant
    Filed: February 3, 2012
    Date of Patent: April 10, 2018
    Assignee: Silicio Ferrosolar S.L.
    Inventor: Hitoshi Dohnomae
  • Patent number: 9550681
    Abstract: A method for producing silicon using microwave and a microwave reduction furnace for use therewith are disclosed, with which it is possible to quickly reduce silica to quickly produce silicon. A material of a mixture of a silica powder and a graphite powder of a mixture of a silica powder, a silicon carbide powder and a graphite powder is set in a refractory chamber. Then, the material set in the chamber is irradiated with microwave. The graphite powder absorbs a microwave energy to increase the temperature, after which silica and graphite react with each other to further increase the temperature while producing silicon carbide, and the heated silica and silicon carbide react with each other. SiO produced through this reaction and silicon carbide are allowed to react with each other, thereby producing high-purity silicon.
    Type: Grant
    Filed: July 2, 2013
    Date of Patent: January 24, 2017
    Assignees: SHIMIZU DENSETSU KOGYO CO., LTD
    Inventors: Kazuhiro Nagata, Miyuki Kanazawa
  • Patent number: 9546094
    Abstract: Methods of converting silica to silicon and fabricating silicon photonic crystal fiber (PCF) are disclosed. Silicon photonic crystal fibers made by the fabrication methods are also disclosed. One fabrication method includes: sealing silica PCF and a quantity of magnesium within a container, the quantity of magnesium defined by 2Mg(g)+SiO2(s)?2MgO(s)+Si(s); converting silica PCF to a reacted PCF through magnesiothermic reduction; and converting the reacted PCF to the fabricated silicon PCF by selective dissolution of the reacted PCF in an acid. Another fabrication method includes: adding silica PCF and a quantity of solid magnesium to an unsealed container, the quantity of magnesium substantially in excess of that defined by 2Mg(g)+SiO2(s)?2MgO(s)+Si(s); converting silica PCF to a reacted PCF through magnesiothermic reduction; and converting the reacted PCF to the fabricated silicon PCF by selective dissolution of the reacted PCF in an acid.
    Type: Grant
    Filed: July 17, 2014
    Date of Patent: January 17, 2017
    Assignee: University of Central Florida Research Foundation, Inc.
    Inventors: Guifang Li, Fatih Yaman
  • Patent number: 9506165
    Abstract: Method for producing silicon-ingots (1) comprising the following steps: Providing a silicon melt (3), growing a block (2) of silicon from said silicon melt (3), said block (2) having a predetermined crystal orientation, cutting said block (2) along at least one cutting plane (16, 17, 18) into a number of silicon-ingots (1).
    Type: Grant
    Filed: October 21, 2013
    Date of Patent: November 29, 2016
    Assignee: SolarWorld Americas Inc.
    Inventor: Nathan Stoddard
  • Patent number: 9440210
    Abstract: Embodiments provide a gas distribution arrangement, a device for handling a chemical reaction comprising such a gas distribution arrangement and a method of providing a chemical reaction chamber with a gas. The distribution arrangement comprises a distribution plate for separating a chemical reaction chamber from a gas inlet area and having a first side arranged to face the chemical reaction chamber and a second side arranged to face the gas inlet area and comprising a set of through holes stretching between the first and the second side, where the first side of the plate comprises a first material surrounding the holes and having a first thermal conductivity, and the plate also comprises a second material forming a base structure also surrounding the holes and having a second thermal conductivity.
    Type: Grant
    Filed: May 11, 2012
    Date of Patent: September 13, 2016
    Assignee: Institutt for Energiteknikk
    Inventors: Werner Filtvedt, Arve Holt
  • Patent number: 9343610
    Abstract: The invention relates to a device for depositing a layer made of at least two components on an object, with a deposition chamber for disposing the object, at least one source with material to be deposited, as well as at least one device for controlling the deposition process, implemented such that the concentration of at least one component of the material to be deposited can be modified in its gas phase prior to deposition on the substrate by selective binding of a specified quantity of the at least one component, wherein the selectively bound quantity of the at least one component can be controlled by modifying at least one control parameter that is actively coupled to a binding rate or the component. It further relates to a device for depositing a layer made of at least two components on an object, wherein a device for controlling the deposition process has at least one gettering element made of a reactive material, wherein the reactive material includes copper and/or molybdenum.
    Type: Grant
    Filed: September 16, 2014
    Date of Patent: May 17, 2016
    Assignee: SAINT-GOBAIN GLASS FRANCE
    Inventors: Joerg Palm, Stephan Pohlner, Stefan Jost, Thomas Happ
  • Patent number: 9139442
    Abstract: Disclosed is a method for producing chloropolysilane by which the yield of a fluid reaction to produce the chloropolysilane is improved while blockage in a reactor caused by attachment of higher-order silicon chloride as a by-product is prevented. In producing the chloropolysilane by reacting fluidized silicon particles or silicon alloy particles with a chlorine gas, an outlet filter is provided, upstream from a product outlet that releases a reaction product, above the area in which the silicon particles or silicon alloy particles are fluidized inside a reaction tank. The outlet filter prevents fine particles blown up by fluidization from flowing out of the reaction tank through the product outlet. A temperature of the outlet filter is set in a range of 210 to 350° C.
    Type: Grant
    Filed: July 26, 2012
    Date of Patent: September 22, 2015
    Assignee: TOAGOSEI CO. LTD.
    Inventors: Masatoshi Morita, Tatsuya Kanie, Hiromu Taguchi, Kanemasa Takashima
  • Patent number: 9129807
    Abstract: A method for synthesis of silicon nanowires provides a growth reactor having a decomposition zone and a deposition zone. A precursor gas introduced into the decomposition zone is disassociated to form an activated species that reacts with catalyst materials located in the deposition zone to deposit nano-structured materials on a low melting point temperature substrate in the deposition zone. A decomposition temperature in the decomposition zone is greater than a melting point temperature of the low melting point temperature substrate. The silicon nanowire are grown directly on the low melting point temperature substrate in the deposition zone to prevent the higher temperatures in the decomposition zone from damaging the molecular structure and/or integrity of the lower melting point temperature substrate located in the deposition zone.
    Type: Grant
    Filed: November 15, 2013
    Date of Patent: September 8, 2015
    Assignee: Palo Alto Research Center Incorporated
    Inventors: Pengfei Qi, William S. Wong
  • Patent number: 9114996
    Abstract: Processes for producing polycrystalline silicon by thermal decomposition of silane are disclosed. The processes generally involve thermal decomposition of silane in a fluidized bed reactor operated at reaction conditions that result in a high rate of productivity relative to conventional production processes.
    Type: Grant
    Filed: September 27, 2012
    Date of Patent: August 25, 2015
    Assignee: SunEdison, Inc.
    Inventors: Satish Bhusarapu, Puneet Gupta, Yue Huang
  • Patent number: 9114989
    Abstract: This invention is directed to a method for recovering, purifying and recycling an inert gas on a continual basis in connection with a silicon crystal pulling process. Silicon oxide impurities generated during the crystal growth process are completely oxidized by in-situ oxidation with a regulated amount of an oxidizing source gas mixture to form silicon dioxide impurities, which can be removed by a particulate removal device. The particulate-free effluent enters a purification unit to remove the remaining impurities. The inert gas emerging from the purification unit can be fed back into the crystal puller apparatus and/or mixed with the oxidizing source gas mixture. As a result, the ability to increase silicon crystal throughput, quality and at the same time reduce the costs associated with recycling the inert gas can be achieved.
    Type: Grant
    Filed: December 4, 2012
    Date of Patent: August 25, 2015
    Assignee: PRAXAIR TECHNOLOGY, INC.
    Inventors: Lingyan Song, Lloyd Anthony Brown
  • Patent number: 9114997
    Abstract: Processes for producing polycrystalline silicon by thermal decomposition of silane are disclosed. The processes generally involve thermal decomposition of silane in a fluidized bed reactor operated at reaction conditions that result in a high rate of productivity relative to conventional production processes.
    Type: Grant
    Filed: September 27, 2012
    Date of Patent: August 25, 2015
    Assignee: SunEdison, Inc.
    Inventors: Satish Bhusarapu, Puneet Gupta, Yue Huang
  • Patent number: 9102538
    Abstract: The invention relates to a polycrystalline silicon production method. The inventive method involves supplying a gas mixture based on a silicon-containing gas to a reduction reactor via a tube system and precipitating silicon on heated surfaces in such a way that an effluent gas mixture is formed. The silicon precipitation process is simultaneously carried out in at least two reactors which are connected in series by the tube system for transporting the gas mixture. Then, the gas mixture used for the operation of all the reactors is supplied at entry into the first reactor and is continuously transmitted through all the connected in series reactors.
    Type: Grant
    Filed: April 20, 2009
    Date of Patent: August 11, 2015
    Inventor: Andrey Algerdovich Lovtsus
  • Patent number: 9090968
    Abstract: An apparatus and method for applying a voltage across silicon rods in a CVD reactor has a series connection wherein the silicon rods may be inserted as resistors A first power supply unit has first transformers connected with one silicon rod. A second power supply unit has second transformers connected to the same number of silicon rods as the first transformers in parallel to one or more of the first transformers. The second transformers have an open circuit voltage lower than the first transformers and a short circuit current higher than the first transformers. A third power supply unit has outputs connected with the silicon rods in parallel to the first and second transformers. The third power supply unit is capable of providing a current in a voltage range below the open circuit voltage of the second transformer and higher than the short circuit current of the second transformer.
    Type: Grant
    Filed: May 17, 2011
    Date of Patent: July 28, 2015
    Assignee: SITEC GMBH
    Inventor: Wilfried Vollmar
  • Patent number: 9079145
    Abstract: A dome valve selectively dispenses a silicon product from a chamber of a vessel. The dome valve comprises a valve body defining a pass-through channel in communication with the chamber of the vessel to allow the silicon product to exit the vessel. The dome valve also comprising a valve seat defining an opening through which the silicon product enters the pass-through channel. The dome valve further comprising a domed body having a semi-hemispherical configuration. The domed body has a sealing surface. The domed body is rotatable between a closed position and an open position for allowing the selective dispensing of the silicon product from the vessel.
    Type: Grant
    Filed: June 14, 2012
    Date of Patent: July 14, 2015
    Assignee: HEMLOCK SEMICONDUCTOR CORPORATION
    Inventors: Don Baranowski, Matthew Bishop, Max Dehtiar, Michael John Molnar, P. Christian Naberhaus
  • Patent number: 9017482
    Abstract: The present invention provides a technique by which heat can be efficiently recovered from a coolant used to cool a reactor, and contamination with dopant impurities from an inner wall of a reactor when polycrystalline silicon is deposited within the reactor can be reduced to produce high-purity polycrystalline silicon. With the use of hot water 15 having a temperature higher than a standard boiling point as a coolant fed to the reactor 10, the temperature of the reactor inner wall is kept at a temperature of not more than 370° C. Additionally, the pressure of the hot water 15 to be recovered is reduced by a pressure control section provided in a coolant tank 20 to generate steam. Thereby, a part of the hot water is taken out as steam to the outside, and reused as a heating source for another application.
    Type: Grant
    Filed: July 20, 2010
    Date of Patent: April 28, 2015
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Shigeyoshi Netsu, Kyoji Oguro, Takaaki Shimizu, Yasushi Kurosawa, Fumitaka Kume
  • Publication number: 20150110701
    Abstract: A low cost process is provided for creating high purity silicon from agricultural waste, particularly rice hull ash. The process uses a series of chemical and thermal steps to yield high purity silica while using less energy and more efficient chemical processes. The high purity silicon features fewer impurities that negatively affect the use of high purity for PV cells and reduces capital and operating costs of processes to yield ultra-pure silicon.
    Type: Application
    Filed: October 20, 2014
    Publication date: April 23, 2015
    Inventors: Richard M. Laine, Julien C. Marchal
  • Publication number: 20150104369
    Abstract: A method and system for reduction or mitigation of metal contamination of polycrystalline silicon are disclosed. A conveyance device comprising a flexible synthetic resin tube having an inner surface at least partially coated with an inner layer comprising elastomeric microcellular polyurethane is disclosed for use in fluidized bed reactor operations associated with manufacture and product handling procedures for ultra pure granular polysilicon. Use of the conduit to effect passage of the polysilicon mitigates foreign metal contact contamination from sources otherwise typically present in such manufacturing units.
    Type: Application
    Filed: October 11, 2013
    Publication date: April 16, 2015
    Inventor: Robert J. Geertsen
  • Patent number: 8974762
    Abstract: Methods of forming a silica-containing products are disclosed. One method comprises: (a) providing a silica containing precursor (SCP) contained in solution that has a pH less than or equal to a pH of 7; (b) optionally doping the SCP with one or more metal species; (d) adding an effective amount of salt to the solution so that the conductivity of the solution is greater than or equal to 4 mS; (e) optionally filtering and drying the SCP; and (f) optionally reacting the dried product from step e with a functional group. Another method comprises: (a) providing a silica containing precursor (SCP) contained in solution that has a pH greater than 7; (b) adjusting the pH of the solution to less than or equal to 7; (c) optionally doping the SCP with one or more metal species; (d) adjusting the pH of the solution to greater than 7; and (e) adding an effective amount of salt to the solution so that the conductivity of the solution is greater than or equal to 4 mS; (f) optionally filtering and drying the SCP.
    Type: Grant
    Filed: October 7, 2011
    Date of Patent: March 10, 2015
    Assignee: Nalco Company
    Inventors: Nicholas S. Ergang, Bruce A. Keiser, Richard Mimna, Brett Showalter, Ian Saratovsky, Hung-Ting Chen
  • Patent number: 8974760
    Abstract: There is provided a hydrogen chrolide gas ejecting nozzle 1 used in a reaction apparatus for producing trichlorosilane in which metal silicon powder is reacted with hydrogen chloride gas to generate trichlorosilane. The member is provided with a shaft portion extending in the longitudinal direction and a head portion that is provided on an end of the shaft portion and extends in a direction intersecting the longitudinal direction of the shaft portion. A supply hole extending in the longitudinal direction is formed in the shaft portion, a plurality of ejection holes are formed in the head portion, and each of the ejection holes is communicatively connected to the supply hole and opened on the outer surface of the head portion toward a direction intersecting the direction to which the supply hole extends.
    Type: Grant
    Filed: June 12, 2013
    Date of Patent: March 10, 2015
    Assignee: Mitsubishi Materials Corporation
    Inventor: Chikara Inaba
  • Patent number: 8956584
    Abstract: Production of polycrystalline silicon in substantially closed-loop processes and systems is disclosed. The processes and systems generally involve disproportionation of trichlorosilane to produce silane or dichlorosilane and thermal decomposition of silane or dichlorosilane to produce polycrystalline silicon.
    Type: Grant
    Filed: December 16, 2011
    Date of Patent: February 17, 2015
    Assignee: SunEdison, Inc.
    Inventors: Puneet Gupta, Yue Huang, Satish Bhusarapu
  • Patent number: 8940264
    Abstract: The invention provides a process for producing polycrystalline silicon, by introducing reaction gases containing a silicon-containing component and hydrogen into reactors to deposit silicon, wherein a purified condensate from a first deposition process in a first reactor is supplied to a second reactor, and is used in a second deposition process in that second reactor.
    Type: Grant
    Filed: August 29, 2011
    Date of Patent: January 27, 2015
    Assignee: Wacker Chemie AG
    Inventors: Walter Haeckl, Karl Hesse, Wilhelm Hoebold, Reinhard Wolf
  • Patent number: 8932550
    Abstract: Methods for producing muticrystalline silicon ingots by use of a Czochralski-type crystal puller and pulling assemblies that include a plurality of seed crystals for pulling multicrystalline silicon ingots.
    Type: Grant
    Filed: December 23, 2009
    Date of Patent: January 13, 2015
    Assignee: MEMC Singapore Pte. Ltd.
    Inventor: Steven L. Kimbel
  • Patent number: 8926929
    Abstract: Silicon granules are produced by chemical vapor deposition on seed particles inside a chamber within a fluidized bed reactor. The chamber contains an obstructing member, or bubble breaker, which is sized and shaped to restrict the growth of bubbles inside the chamber and which has interior passageways through which a heated fluid passes to transfer heat to gas inside the chamber.
    Type: Grant
    Filed: January 11, 2010
    Date of Patent: January 6, 2015
    Assignee: REC Silicon Inc
    Inventors: Michael V. Spangler, Glen Stucki
  • Patent number: 8920761
    Abstract: The present invention relates to a method for producing high purity silicon comprising providing molten silicon containing 1-10% by weight of calcium, casting the molten silicon, crushing the silicon and subjecting the crushed silicon to a first leaching step in an aqueous solution of HCl and/or HCl+FeCl3 and to a second leaching step in an aqueous solution of HF and HNO3. The leached silicon particles is thereafter subjected to heat treatment at a temperature of between 1250° C. and 1420° C. for a period of at least 20 minutes and the heat treated silicon is subjected to a third leaching step in an aqueous solution of HF and HNO3.
    Type: Grant
    Filed: September 9, 2010
    Date of Patent: December 30, 2014
    Assignee: Elkem Solar AS
    Inventor: Khalil Zeaiter
  • Patent number: 8894766
    Abstract: The invention provides a process for producing polycrystalline silicon, including introduction of a reaction gas containing a silicon-containing component and hydrogen by means of one or more nozzles into a reactor including at least one heated filament rod on which silicon is deposited, wherein an Archimedes number Arn which describes flow conditions in the reactor, as a function of the fill level FL which states the ratio of one rod volume to one empty reactor volume in percent, for a fill level FL of up to 5% is within the range limited at the lower end by the function Ar=2000×FL?0.6 and at the upper end by the function Ar=17 000×FL?0.9, and at a fill level of greater than 5% is within a range from at least 750 to at most 4000.
    Type: Grant
    Filed: August 22, 2011
    Date of Patent: November 25, 2014
    Assignee: Wacker Chemie AG
    Inventors: Marcus Schaefer, Oliver Kraetzschmar
  • Patent number: 8894959
    Abstract: There is provided a silicon production method which comprises producing semiconductor grade silicon while producing solar grade silicon by converting a portion of trichlorosilane into silicon for solar cells. There is also provided an industrially advantageous method that removes contaminants from a chlorosilane circulating system which produces trichlorosilane in producing silicon from trichlorosilane by a vapor deposition method.
    Type: Grant
    Filed: May 15, 2006
    Date of Patent: November 25, 2014
    Assignee: Tokuyama Corporation
    Inventors: Satoru Wakamatsu, Hiroyuki Oda
  • Publication number: 20140341795
    Abstract: Method and apparatus for producing molten purified crystalline silicon from low-grade siliceous fluorspar ore, sulfur trioxide gas, and a metallic iodide salt. Method involves: (1) initially reacting silicon dioxide-bearing fluorspar ore and sulfur trioxide gas in sulfuric acid to create silicon tetrafluoride gas and fluorogypsum; (2) reacting the product gas with a heated iodide salt to form a fluoride salt and silicon tetraiodide; (3) isolating silicon tetraiodide from impurities and purifying it by washing steps and distillation in a series of distillation columns; (4) heating the silicon tetraiodide to its decomposition temperature in a silicon crystal casting machine, producing pure molten silicon metal ready for crystallization; and pure iodine gas, extracted as liquid in a cold-wall chamber. The system is batch process-based, with continuous elements. The system operates largely at atmospheric pressure, requiring limited inert gas purges during batch changes.
    Type: Application
    Filed: August 4, 2014
    Publication date: November 20, 2014
    Applicant: Silichem LLC
    Inventor: Matthew J. Channon
  • Publication number: 20140335008
    Abstract: A process for preparing granular polysilicon using a fluidized bed reactor is disclosed. The upper and lower spaces of the bed are defined as a reaction zone and a heating zone, respectively, with the height of the reaction gas outlet being selected as the reference height. The invention maximizes the reactor productivity by sufficiently providing the heat required and stably maintaining the reaction temperature in the reaction zone, without impairing the mechanical stability of the fluidized bed reactor. This is achieved through electrical resistance heating in the heating zone where an internal heater is installed in a space in between the reaction gas supplying means and the inner wall of the reactor tube, thereby heating the fluidizing gas and the silicon particles in the heating zone.
    Type: Application
    Filed: July 24, 2014
    Publication date: November 13, 2014
    Applicant: Korea Research Institute of Chemical Technology
    Inventors: Hee Young Kim, Kyung Koo Yoon, Yong Ki Park, Won Choon Choi
  • Publication number: 20140328740
    Abstract: Methods and systems for producing silane that use electrolysis to regenerate reactive components therein are disclosed. The methods and systems may be substantially closed-loop with respect to halogen, an alkali or alkaline earth metal and/or hydrogen.
    Type: Application
    Filed: July 18, 2014
    Publication date: November 6, 2014
    Applicant: SUNEDISON LLC
    Inventors: Puneet Gupta, Henry F. Erk, Alexis Grabbe
  • Patent number: 8858707
    Abstract: A method for making silicon nanorods is provided. In accordance with the method, Au nanocrystals are reacted with a silane in a liquid medium to form nanorods, wherein each of said nanorods has an average diameter within the range of about 1.2 nm to about 10 nm and has a length within the range of about 1 nm to about 100 nm.
    Type: Grant
    Filed: April 14, 2010
    Date of Patent: October 14, 2014
    Assignee: Merck Patent GmbH
    Inventors: Andrew T. Heitsch, Colin M. Hessel, Brian A. Korgel
  • Publication number: 20140302391
    Abstract: The present disclosure is directed at clathrate (Type I) allotropes of silicon, germanium and tin. In method form, the present disclosure is directed at methods for forming clathrate allotropes of silicon, germanium or tin which methods lead to the formation of empty cage structures suitable for use as electrodes in rechargeable type batteries.
    Type: Application
    Filed: March 27, 2014
    Publication date: October 9, 2014
    Applicant: Southwest Research Institute
    Inventors: Michael A. MILLER, Kwai S. CHAN, Wuwei LIANG, Candace K. CHAN